Abstract: The disclosure provides a power supply circuit including a pulse width modulator (PWM), a first voltage conversion unit, a second voltage conversion unit, a conversion chip, and a delay unit. The first voltage conversion unit converts a voltage of a power supply to a first voltage according to pulse signals output by the PWM. The second voltage conversion unit converts the voltage of the power supply to a second voltage according to the pulse signals. The conversion chip converts the first voltage to a third voltage, converts the second voltage to a fourth voltage, and outputs a power-good signal to a south bridge chipset through the delay unit. The disclosure also provides a notebook computer including the power supply circuit.

Abstract: The present disclosure includes apparatuses and methods for power consumption control. A number of embodiments include determining power consumption information for each phase in a combination of phases of a command, and authorizing execution of at least one of the phases in the combination based, at least partially, on the power consumption information determined for the at least one of the phases.

Abstract: A memory subsystem includes an adaptive output voltage to provide a voltage based on a power profile of a memory device of the memory subsystem. A charge pump increases the voltage to a level needed to write data to the memory device. The voltage provided is based on the power profile of the memory device, which indicates a voltage level that provides good efficiency for the charge pump, and is within maximum levels for the memory device. The voltage can be higher than a nominal voltage indicated for the memory device in a specification.

Abstract: An electronics chip includes a charge pump and at least one high voltage (HV) electro-static discharge (ESD) module. The charge pump is configured to provide a predetermined voltage across a microphone. The devices described herein are implemented in a standard low voltage CMOS process and has a circuit topology that provides an inherent ESD protection level (when it is powered down), which is higher than the operational (predetermined) DC level. At least one high voltage (HV) electro-static discharge (ESD) module is coupled to the output of the charge pump. The HV ESD module is configured to provide ESD protection for the charge pump and a microelectromechanical system (MEMS) microphone that is coupled to the chip. The at least one HV ESD module includes a plurality of PMOS or NMOS transistors having at least one high voltage NWELL/DNWELL region formed within selected ones of the PMOS or NMOS transistors.

Abstract: Embodiments of bus circuits and related techniques are disclosed herein. In some embodiments, a bus circuit may include: a source follower arrangement, including a first transistor and a second transistor, coupled between a supply voltage and an access line of a memory cell, wherein the first transistor and the second transistor each have a gate terminal and wherein the access line is a bit line or a word line; a capacitor having a first terminal coupled to the gate terminal of the first transistor and having a second terminal coupled to a reference voltage; and a switch coupled between the first terminal of the capacitor and a voltage regulator. Other embodiments may be disclosed and/or claimed.

Abstract: Provided is a semiconductor integrated circuit including a plurality of memory chips stacked therein. Each of the memory chips may include: a pumping enable signal control unit suitable for generating a pumping enable signal in response to a power-up signal or a trigger signal received from a first adjacent memory chip, delaying the pumping enable signal by a given time, and outputting the delayed pumping enable signal to a second adjacent memory chip; and a pumping unit suitable for generating a pumping voltage by performing a pumping operation in response to the pumping enable signal.

Abstract: A low voltage sensing scheme reduces active power down standby leakage current in a memory device. A clamping device or diode is used between a Psense amplifier control line (e.g. ACT) and Vcc and/or between an Nsense amplifier control line (e.g. RNL*) and Vss (ground potential). The clamping diode is not enabled during normal memory operations, but is turned on during active power down mode to reduce leakage current through ACT and/or RNL* nodes. The clamping device connected to the ACT node may reduce the voltage on the ACT line during power down mode, whereas the clamping device connected to the RNL* node may increase the voltage on the RNL* line during power down mode to reduce sense amplifier leakage current through these nodes. Because of the rules governing abstracts, this abstract should not be used to construe the claims.

Abstract: A circuit that includes a current source module, a current sink module and a memory bank is disclosed. Each of the current source module, the current sink module and the memory bank is connected to the first bit/source line and the second bit/source line. The memory bank is bounded by the current source module and the current sink module. When the current source module and the current sink module receive a triggering pulse from the first bit/source line and a select signal with a first state, the current source module is activated to generate an operating current to the first bit/source line that transmits through a conducted memory cell of the memory bank and the current sink module is activated to drain the operating current from the second bit/source line.

Abstract: A circuit can include at least one two terminal element programmable between at least two impedance states; a write section configured to place the element into different impedance states in a write mode; and a read section configured to generate an output value corresponding to the impedance state of at least one element in a read mode; wherein the at least one element draws substantially no current in a standard mode that is different from the write and read modes.

Abstract: A memory system of one embodiment includes: a nonvolatile memory including a plurality of word lines each connected to memory cells, each one of the memory cells being capable storing two bits, the memory cells connected to one of the plurality of word lines constituting an upper page and a lower page, each one of the pages being a unit of data programming; a random access memory configured to store an address translation table indicating relationships between logical addresses designated by a host and physical addresses in the nonvolatile memory. The memory system of the embodiment further includes a memory controller which execute data fixing for saving the address translation table from the random access memory to the nonvolatile memory; and write dummy data to at least one page subsequent to the page in which valid data has been written in the nonvolatile memory before executing the data fixing.

Abstract: An electrified vehicle and method for estimating peak power of a battery system of the electrified vehicle are presented. In one exemplary implementation, the method includes receiving, at a controller of the electrified vehicle, measured current, voltage, and temperature of the battery system and determining, at the controller, operating parameters for the battery system based on the measured current, voltage, and temperature. An initial peak current at a start of a current prediction period for the battery system is determined, at the controller, based on the operating parameters, and an instantaneous peak current of the battery system is determined based on its initial peak current by performing voltage-limited extrapolation of resistances and open-circuit voltage (VLERO) of a battery model for the battery system. The battery system and an electric motor of the electrified vehicle are controlled, by the controller, based on the instantaneous peak current.

Abstract: An active driver includes a mirror circuit suitable for generating a drive voltage and a sink voltage using an external voltage, a first reset circuit suitable for outputting the drive voltage of a logic high level in a standby mode; a second reset circuit suitable for transitioning the drive voltage to a logic low level in response to the sink voltage when being changed from the standby mode to an active mode, and an output circuit suitable for outputting the external voltage as an internal voltage in response to the drive voltage when being changed from the standby mode to the active mode.

Abstract: A backup power supply device that is used as a backup for a normal power supply device that includes a first converter configured to convert a first alternating-current voltage into a first direct-current voltage and a second converter configured to convert the first direct-current voltage into a second direct-current voltage includes a first detector that is coupled to an output of the first converter and outputs a first detection signal when the first direct-current voltage is lower than a first predetermined value; a third converter that converts a second alternating-current voltage into a third direct-current voltage; a battery that is charged by the third direct-current voltage; and a first switch that connects an output of the battery or an output of the third converter to an input of the second converter based on the output of the first detection signal.

Abstract: In an embodiment of the invention, power is provided to an SRAM array without causing latch-up by charging the positive voltage node in the SRAM array and the Nwell regions in the SRAM at approximately the same rate.

Abstract: Devices and systems for powering up a memory device, for example, are disclosed. One such memory device includes power up circuitry configured to receive an external power supply and to provide an internal power supply to the memory device upon receipt of a command. The power up circuitry may be configured to provide the internal power supply limited to a peak current, or may be configured to provide the internal power supply not limited to a peak current. The memory device may be, for example, a synchronous dynamic random access memory (SDRAM) device or Flash memory.

Abstract: A circuit for biasing a gallium arsenide (GaAs) power amplifier includes a reference voltage generator circuit implemented in a gallium arsenide (GaAs) material system, a field effect transistor (FET) bias circuit implemented in the gallium arsenide material system and adapted to receive an output of the reference voltage generator circuit and adapted to provide an output to a radio frequency (RF) amplifier stage.

Abstract: Memory devices are disclosed, such as those that include a semiconductor-on-insulator (SOI) NAND memory array having a boosting plate. The boosting plate may be disposed in an insulator layer of the SOI substrate such that the boosting plate exerts a capacitive coupling effect on a p-well of the memory array. Such a boosting plate may be used to boost the p-well during program and erase operations of the memory array. During a read operation, the boosting plate may be grounded to minimize interaction with p-well. Systems including the memory array and methods of operating the memory array are also disclosed.

Abstract: The semiconductor memory device may include a power control signal generator and a sense amplifier circuit. The power control signal generator may generate a first power control signal in response to a detection signal generated from detecting a level of a power supply voltage signal. The sense amplifier circuit may generate a first power signal driven to have a first drive voltage in response to the first power control signal. The sense amplifier circuit may sense and amplify a level of a bit line using the first power signal as a power supply voltage.

Abstract: The invention provides a current detection circuit and a semiconductor memory apparatus using the current detection circuit thereof. The current detection circuit is capable of rapidly sensing the current flowing through a tiny bit line structure. A page buffer/sensing circuit of the invention includes: a transistor TP3 pre-charging a node SNS during a pre-charge period and providing a target constant current to the node SNS during a discharge period; a transistor TN3 pre-charging the bit line according to the voltage pre-charged to the node SNS; and a transistor TP2 connected to the node SNS. The transistor TP2 detects whether or not a current larger than the constant current supplied by the transistor TP3 is discharged from the bit line and outputs a detection result to a node SENSE.

Abstract: Dark-bit masking technologies for physically unclonable function (PUF) components are described. A computing system includes a processor core and a secure key manager component coupled to the processor core. The secure key manager includes the PUF component, and a dark-bit masking circuit coupled to the PUF component. The dark-bit masking circuit is to measure a PUF value of the PUF component multiple times during a dark-bit window to detect whether the PUF value of the PUF component is a dark bit. The dark bit indicates that the PUF value of the PUF component is unstable during the dark-bit window. The dark-bit masking circuit is to output the PUF value as an output PUF bit of the PUF component when the PUF value is not the dark bit and set the output PUF bit to be a specified value when the PUF value of the PUF component is the dark bit.

Abstract: The programming of programmable memory devices, e.g. one-time programmable (OTP) memory device is presented. In particular, efficient methods and systems for generating the supply voltage for programming a programmable memory device are described. A controller configured to control the programming of a data word into a programmable memory device is described. The controller is configured to set one or more digital control signals for programming the data word into the programmable memory device. Furthermore, the controller is configured to, subsequent to setting the one or more digital control signals, increasing a device supply voltage for the programmable memory device from a default operation level to a programming level.

Abstract: A semiconductor memory device includes a first pre-charge control block suitable for generating a first control signal by counting a number of toggles of an operation clock in response to a first active pulse in a self-refresh operation exit mode, a second pre-charge control block suitable for generating a second control signal in response to an active command for an active operation in a self-refresh operation mode, and an operation control block suitable for disabling the first pre-charge control block in the self-refresh operation mode, and disabling the second pre-charge control block in a self-refresh operation exit mode, wherein a pre-charge operation starts in response to the first and second control signals after the active operation. The semiconductor memory device may then be secured in a minimal time for stably performing an active operation during a self-refresh operation.

Abstract: A semiconductor device includes a through electrode vertically passing through the semiconductor device; a metal pad electrically coupling the through electrode and an exterior; a data input block suitable for transferring a data signal to the metal pad in response to a write command; a through electrode storage block suitable for storing the data signal transferred through the metal pad; and a data output block suitable for outputting the data signal, which is stored in the through electrode storage block, to the exterior in response to a read command.

Abstract: A power management device is adopted in a memory device which includes a first memory unit and a second memory unit, including a first voltage regulator, a second voltage regulator, and a controller. The first voltage regulator receives a supply voltage from an external supply source and provides a first internal voltage to the first memory unit. The second voltage regulator receives the supply voltage from the external supply source and provides a second internal voltage to the second memory unit. The controller independently enables or disables the first voltage regulator and the second voltage regulator according to a control signal.

Abstract: A first transistor is turned on based on a first control signal provided to a first terminal of the first transistor. A second control signal is generated by a logic device based on a first input signal and a second input signal. The first input signal is controlled by a logical value stored by a keeper circuit and based on the first control signal, and the second input signal is generated by inverting the first control signal. A second transistor is turned on based on the second control signal provided to a first terminal of the second transistor. A second terminal of the first transistor is coupled with a second terminal of the second transistor.

Abstract: A storage device includes a first measurement unit, a second measurement unit, and a collection unit. The first measurement unit measures electric power consumed in each of a plurality of memory devices. The second measurement unit measures electric power consumed in a control unit controlling access from an information processing apparatus to the plurality of memory devices. The collection unit collects first information regarding the electric power measured by the first measurement unit and second information regarding the electric power measured by the second measurement unit.

Abstract: A system, method and apparatus for dynamic power management including creating a model for each task of multiple tasks performed by a circuit, the model including a corresponding power requirement value for each task, selecting each task for execution, executing the selected task when the corresponding power requirement value does not exceed an average power consumption cap of an execution window, determining an actual power consumption of the selected task during execution of the selected task and storing the actual power consumption corresponding to the selected task as the corresponding power requirement value for the selected task. A memory system can include a memory die, a data bus coupled to the memory die, a power supply coupled to the memory die, a power monitor coupled to the memory die and the power supply and a controller coupled to the data bus and the memory die.

Abstract: A semiconductor device includes a reference voltage generation circuit to which a power source voltage is applied; an output terminal for outputting an output voltage; a determining circuit connected to the reference voltage generation circuit and the output terminal for generating the output voltage according to a determination target voltage; and a constant electric current source connected to the determining circuit and a ground potential for generating a constant electrical current.

Abstract: A method of generating a pumping voltage in an integrated circuit includes receiving an external clock signal from outside of the integrated circuit. The frequency of the received external clock signal is changed according to one or more modulation ratios, resulting in one or more respective modulated external clock signal. The external clock signal or one of the modulated external clock signals is then selected for use as a pump clock signal. The pump clock signal is used for driving the pump capacitance of a pump circuit for generating the pumping voltage.

Abstract: An embedded synchronous random access memory (SRAM) chip, includes a first single-port (SP) SRAM macro and a second SP macro. The first macro includes a first periphery circuit, and a plurality of first SRAM cells. The second macro includes a second periphery circuit, and a plurality of second SRAM cells. Further, each cell of the plurality of first SRAM cells is electrically connected to a write-assist circuitry, wherein the write assist circuitry is configured to assist the write cycle capability of each cell of the plurality of first SRAM cells. Further, each cell of the plurality of second SRAM cells do not include write assist circuitry.

Abstract: Cell power supply lines are arranged for memory cell columns, and adjust impedances or voltage levels of the cell power supply lines according to the voltage levels of bit lines in the corresponding columns, respectively. In the data write operation, the cell power supply line is forced into a floating state according to the bit line potential on a selected column and has the voltage level changed, and a latching capability of a selected memory cell is reduced to write data fast. Even with a low power supply voltage, a static semiconductor memory device that can stably perform write and read of data is implemented.

Abstract: A method for data storage includes, in a host system that operates alternately in a normal state and a hibernation state, reserving a hibernation storage space in a non-volatile storage device for storage of hibernation-related information in preparation for entering the hibernation state. While the host system is operating in the normal state, a storage task other than storage of the hibernation-related information is performed using at least a portion of the reserved hibernation storage space.

Abstract: A semiconductor device includes a voltage hold circuit that raises a second boosted voltage with rise of an output voltage of a booster circuit that generates a first boosted voltage and then maintains the second boosted voltage at a point when the output voltage reaches a hold voltage level after that, and a first switch that short-circuits a first output terminal through which the first boosted voltage is output and a second output terminal through which the second boosted voltage is output until the output voltage reaches the hold voltage level.

Abstract: The semiconductor device includes a first channel region suitable for including a first pad region and a first core region and receiving a first power signal through a first power line, a second channel region suitable for including a second pad region and a second core region and receiving the first power signal through a second power line, and a switch unit suitable for electrically disconnecting the second power line from a first power stabilization unit if a predetermined operation of the first channel region is performed and electrically disconnecting the first power line from the first power stabilization unit if the predetermined operation of the second channel region is performed.

Abstract: A voltage regulator comprises a power source terminal configured to supply a power source voltage; an output terminal configured to output a load current; a first transistor which is connected between the power source terminal and the output terminal, is enabled by a signal applied from an amplifier in a first mode to generate a first current, and outputs the first current to the output terminal; and a second transistor which is connected between the power source terminal and the output terminal, is enabled by a signal applied from the amplifier in a second mode to generate a second current different from the first current, and outputs the second current to the output terminal, wherein the first transistor is enabled in the second mode, and the second transistor is disabled in the first mode.

Abstract: A driver of a semiconductor memory device and driving method thereof is disclosed, which relates to a technology for reducing consumption of a leakage current not required for a driver circuit of a semiconductor memory device. The driver of the semiconductor memory device includes a drive controller configured to selectively provide a first voltage and a second voltage, that have different levels in response to a power-down signal, to a first node; an input driver configured to selectively output a voltage received from the first node in response to a decoding signal; and an output driver configured to be driven in response to an output voltage of the input driver.

Abstract: A memory cell power supply circuit for each column includes a first PMOS transistor and a second PMOS transistor connected together in series between a first power supply and a second power supply. A connection point between the first and second PMOS transistors is output as a memory cell power supply. A control signal which is based on a column select signal and a write control signal is input to a gate terminal of the first PMOS transistor. A signal which is an inverted version of the signal input to the gate terminal of the first PMOS transistor is input to a gate terminal of the second PMOS transistor.

Abstract: The memory device includes a first logic element which is supplied with a first power supply voltage, and inverts a polarity of a potential of an input terminal to output the potential with the inverted polarity from an output terminal, a second logic element which is supplied with a second power supply voltage supplied through a different path from the first power supply voltage, and inverts a polarity of a potential of an input terminal to output the potential with the inverted polarity from an output terminal, a first memory circuit connected to the input terminal of the first logic element, and a second memory circuit connected to the input terminal of the second logic element. The input terminal and the output terminal of the first logic element are connected to the output terminal and the input terminal of the second logic element, respectively.

Abstract: Devices and methods that allow dynamic management of throughput in a memory device based on a power supply voltage are provided. According to various embodiments, the power supply level can be monitored. Based on the result of the monitoring, an appropriate throughput can be determined. Once the appropriate throughput is determined, an appropriate control signal based on the determined throughput can be generated. The control signal can be configured to cause a bitline driver circuit in a memory array to activate a number of bitlines consistent with the determined throughput.

Abstract: A three-dimensional (3D) memory cell separation among 3D integrated circuit (IC) (3DIC) tiers is disclosed. Related 3DICs, 3DIC processor cores, and methods are also disclosed. In embodiments disclosed herein, memory read access ports of a memory block are separated from a memory cell in different tiers of a 3DIC. 3DICs achieve higher device packing density, lower interconnect delays, and lower costs. In this manner, different supply voltages can be provided for the read access ports and the memory cell to be able to lower supply voltage for the read access ports. Static noise margins and read/write noise margins in the memory cell may be provided as a result. Providing multiple power supply rails inside a non-separated memory block that increases area can also be avoided.

Abstract: Integrated circuits may include memory interface circuitry that communicates with memory. The memory interface circuitry may include latch circuitry that receives a data strobe enable signal from the memory controller and latches the data strobe enable signal using a data strobe signal received from the memory. The integrated circuit may include logic circuitry that gates the data strobe signal using the latched data strobe enable signal. The logic circuitry may pass the data strobe signal in response to activation of the latched data strobe enable signal. The integrated circuit may include counter circuitry that monitors the gated data strobe signal. The counter circuitry may monitor the gated data strobe signal by counting pulses in the gated data strobe signal to produce a counter value. When the counter value reaches a target value, the logic circuitry may block the data strobe signal from passing to the memory controller.

Abstract: A method that includes using a PMOS pass gate to couple a first line to a second line, where a gate terminal of the PMOS pass gate is coupled to an output terminal of a memory cell, is described. In one implementation, the PMOS pass gate has a negative threshold voltage. In one implementation, the first line and the second line are respectively first and second interconnect lines of an IC.

Abstract: A nonvolatile memory is provided which includes a memory cell array including a plurality of nonvolatile memory cells; a decoder connected with the memory cell array through a plurality of word lines; a data input/output circuit connected with the memory cell array through a plurality of bit lines; a voltage detector configured to detect a variation in a power supply voltage to output a voltage variation signal; and control logic configured to control the decoder and the data input/output circuit such that data stored at the memory cell array is invalidated in response to the voltage variation signal.

Abstract: A flash memory apparatus is provided. The flash memory apparatus includes a plurality of memory cell regions. Each of the memory cell regions includes a plurality of memory cells, a programming voltage control generator and an erase voltage control generator. The memory cells receives a programming control voltage through a control end point for programming operation, and the memory cells receives an erase control voltage through an erase end point for erasing operation. The programming voltage control generator provides the programming control voltage to the memory cells, and the erase voltage control generator provides the erase control voltage to the memory cells.

Abstract: Within a memory 2 comprising an array 4 of bit cells 6 write driver circuitry 14 uses a boosted write signal which is boosted to a lower than normal level during a write operation. Column select transistors 16 are driven by column select circuitry 12. The column select signal is boosted to a lower than normal level when a column is unselected and to higher than a normal level when a column is selected. Voltage boost circuitry, such as charge pumps 20, 22 are employed within the column select circuitry 12 to achieve these boosted levels for the columns select signal.

Abstract: A device (e.g., an integrated circuit memory device such as a static random access memory device) includes word line drivers. Each of the word line drivers includes a pull-up device that is coupled to a node via a shared line. A precharge device is coupled between a power supply and the node. The precharge device and a pull-up device for a selected word line driver are controlled to allow the power supply to charge the node and then to allow the charge stored in the node to flow into a word line corresponding to the selected word line driver.

Abstract: A method, circuit arrangement, and program product for dynamically reallocating power consumption at a component level of a processor. Power tokens representative of a power consumption metric are allocated to interconnected IP blocks of the processor, and as additional power is required by an IP block to perform assigned operations, the IP block may communicate a request for additional power tokens to one or more interconnected IP blocks. The interconnected IP blocks may grant power tokens for the request based on a priority, availability, and/or power consumption target. The requesting IP block may modify power consumption based on power tokens granted by interconnected IP blocks for the request. A power management block may adjust power token allocation of one or more IP blocks by communicating a command to one or more IP blocks and/or by adjusting a power token request.

Abstract: In accordance with various embodiments, a smart card is described which has an antenna, which is configured to receive an electromagnetic signal, a rectifier, which is configured to rectify the received signal, and a capacitive or an inductive DC-to-DC voltage converter, which is configured to provide a supply voltage on the basis of the rectified signal.

Abstract: The various embodiments described herein include systems, methods and/or devices used to enable dynamic brownout adjustment in a storage device. In one aspect, the method includes: (1) obtaining a set of power tolerance settings, the set of power tolerance settings used for determining whether one or more power supply voltages provided to the storage device are out of range, (2) in response to a predefined trigger, adjusting the set of power tolerance settings in accordance with one or more parameters of the storage device, (3) determining, in accordance with the adjusted set of power tolerance settings, whether the one or more power supply voltages are out of range, and (4) in accordance with a determination that the one or more power supply voltages are out of range, latching a power fail condition.

Abstract: A method for testing a memory device. The method can include coupling the memory device to a test apparatus and determining whether each of the memory cells in the memory device is within a first specification range. Each of the cells that fall outside of the first range can be identified. Each of the cells that meet the second specification range can be tested. The method can include selecting a tile associated with a highest number of cells that fall outside of the second range. A resource can then be used to repair each of the cells that fall outside of the second range for a tile associated with a fewer number of cells that fall outside of the second range such that a first number of tiles meets the first range and a second number of tiles meets the second range such that the first number the second number.