Abstract: A multi-port memory, comprising: a plurality of ports, each port including port input logic that generates a write enable value from received control signals, and a delay stage coupled to store the write enable value from the input stage, and configured to force the write enable value to a disable state in response to an asserted busy signal of the port; and an arbitration circuit coupled to the ports that arbitrates contending accesses to the ports by de-asserting a busy signal to one port, and asserting a busy signal for all other ports.

Abstract: A memory device can include a random access memory array configured to store data values; a plurality of bi-directional ports, configured to transfer data values into and out of the memory device on rising and falling transitions of at least one access clock signal; and at least one address bus configured to receive at least a portion of address values to random access locations on rising and falling transitions a timing clock signal having the same frequency as the access clock signal.

Abstract: A multiple-port memory device having at least first and second ports each configured to support read and write operations. The multiple-port memory device further comprises a single-port memory device and control circuitry coupled between the first and second ports and the single-port memory device. The control circuitry is configured to multiplex input signals received over the first and second ports of the multiple-port memory device into respective input time slots of the single port of the single-port memory device, and to demultiplex output time slots of the single port of the single-port memory device into output signals that are supplied over the first and second ports of the multiple-port memory device.

Abstract: A semiconductor memory device includes a plurality of N external ports, each of which receives commands, and an internal circuit which performs at least N access operations during a minimum interval of the commands that are input into one of the external ports.

Abstract: A configurable memory subsystem includes a memory module with a circuit board having a first and a second memory-containing device (MCD) pair mounted thereto. Each MCD pair has a first MCD in communication with a second MCD. Each MCD has an input port, an output port, and a memory each communicating with a bridge. In response to a command, the bridge transfers at least one of a portion of a data packet from the input port to the output port or to the memory, or transfers a portion of a memory packet from the memory to the output port. A loop-back device receives the command and the data packet form the first MCD pair and transmits the command and data packet to the second MCD pair.

Abstract: A semiconductor device includes a first circuit that generates a self refresh signal in a predetermined cycle asynchronous with a cycle set externally, a second circuit that generates a refresh address in response to the self refresh signal and updates the refresh address and outputs the refresh address, a third circuit that retains a relief address, a fourth circuit that counts number of generation of the self refresh signal and activates an interrupt signal when a count of the number of generation reaches a predetermined count, a fifth circuit that specifies the refresh address when the interrupt signal is in an inactive state and specifies the relief address when the interrupt signal is in an active state, and a sixth circuit that performs a refresh operation on memory cells specified by the selected refresh address or the relief address. The second circuit temporarily stops updating the refresh address in response to activation of the interrupt signal.

Abstract: An innovative dual-port subthreshold static random access memory (SRAM) cell for sub-threshold voltage operation is disclosed. During write mode, the dual-port subthreshold SRAM cell would cut off the positive feedback loop of the inverters and utilize the reverse short-channel effect to enhance write capability. The single-ended read/write port structure further reduces power consumption of the lengthy bit line. Therefore, the dual-port subthreshold SRAM cell is a suitable for long operation in a first-in first-out memory system. Although the lower voltage reduces the stability of the memory cell, the dual-port subthreshold SRAM cell of the present invention can still stably operate.

Abstract: Memory circuitry 2 includes a memory cell 12 coupled to a plurality of bit line pairs 18, 24 providing multiple access ports. Write boost circuitry 36 serves to increase a write voltage applied to write a data value into the memory cell during at least a boost period of a write access. Collision detection circuitry 10 detects when the write access at least partially overlaps in time with a read access. If a collision is detected, then write assist circuitry serves to drive the bit line pair of the detected read access with a write assist voltage difference having the same polarity as the write voltage and a magnitude less than the write voltage with the boost voltage applied. The write assist circuitry drives the bit line pair of the colliding read independently of the write boost circuitry applying the boost voltage such that the boost voltage is undiminished by the action of the write assist circuitry.

Abstract: Embodiments for data dependent boosted (DDB) bit cells that may allow for smaller minimum cell supplies (Vmin) without necessarily having to increase device dimensions are presented.

Abstract: A multi-port memory device includes: a bank having a plurality of matrices; a plurality of test data input/output units where data is input/output using a test mode for detecting a defective memory cell; a plurality of ports converted into a decoding device for decoding a command/address at the test mode; a plurality of data transfer lines for transferring data between the matrices and the test data I/O units, wherein the data transfer lines is grouped into the number of matrices; and a plurality of temporary storing units included between the data transfer lines and the matrices for temporarily storing data.

Abstract: The present invention is directed to provide a semiconductor device having a dual-port memory circuit in which influence of placement of replica cells exerted on enlargement of chip area is reduced. A memory cell array of a dual-port memory circuit has: a first replica cell array used to respond to an instruction of reading operation from one of dual ports; and a second replica cell array used to respond to an instruction of reading operation from the other dual port. Each of the replica cell arrays has: replica bit lines obtained by mutually short-circuiting parallel lines having a length obtained by cutting, in half, an inversion bit line and a non-inversion bit line of complementary bit lines to which data input/output terminals of a memory cell are coupled; and replica cells coupled to the replica bit lines and having transistor placement equivalent to that of the memory cells.

Abstract: Disclosed is an input circuit of a semiconductor memory apparatus. The input circuit includes a first buffer and a second buffer. The first buffer has an input terminal connected with a first input pin for receiving a control signal used in a multi-control mode for controlling an entire memory area by dividing the entire memory area, and an output terminal having a first level according to a control mode signal. The second buffer has an input terminal connected with a second input pin for receiving one of plural signals used in a single control mode for controlling the entire memory area without dividing the entire memory area, and an output terminal having a second level according to the control mode signal.

Abstract: Various novel aspects are disclosed by reference to an integrated circuit block that includes programmable regions, and extra-block connection pins or points with adapter circuitry, coupled by an interconnect system. Multiple independent interconnects are disclosed within the interconnect system, as are options for the composition of the programmable regions and their connectivity with the interconnect system. Adapter circuitry is disclosed that includes support for coupling extra-block memory circuits or devices using a variety of modes, protocols, and options. Modular circuit blocks provide flexibility at the interface between programmable region and fixed function circuitry.

Abstract: A semiconductor device enabling expansion of a noise margin. For example, in a memory area in which each memory cell MC is coupled to a word line WLA for a first port and a word line WLB for a second port, and a plurality of memory cells MC are disposed in a matrix shape, each word line is disposed in the order of WLA0, WLB0, WLB1, WLA1, WLA2. Further, a pitch d2 between WLA-WLA and between WLB-WLB is made smaller than a pitch d1 between WLA-WLB. As such, the word lines of an identical port are disposed at the pitch d2 on one of both sides of a certain word line and the word lines of different ports are disposed at the pitch d1 on the other.

Abstract: A method, apparatus, computer chip, circuit board, computer and system are provided in which data is stored in a low-voltage, maskable memory. Also provided is a computer readable storage device encoded with data for adapting a manufacturing facility to create an apparatus. The method includes storing a data value in a memory cell in a storage device if a first access parameter associated with the memory cell matches a first pre-determined value and if a second access parameter associated with the memory cell matches a second pre-determined value. The method also includes maintaining a data value in the memory cell in the storage device if the first access parameter differs from the first pre-determined value. The apparatus includes a first and second pair of access parameter ports operatively coupled together and associated with a first and second access parameter respectively.

Abstract: Systems and methods for reconfiguring ECU tasks for ensuring that a vehicle is operational upon failure of a task or an ECU. A first on-board reconfiguration strategy is generated and executed by an on-board unit of the vehicle to bring the vehicle to a safe state and a second off-line reconfiguration strategy is generated by a remote center unit and then executed by the on-board unit.

Abstract: In one embodiment, a memory is provided that includes: a write driver for selectively driving a driven pair of bit lines selected from a plurality of bit line pairs during a write operation; a first stage clamping circuit operable to clamp a pair of internal nodes to a clamping voltage, wherein the first stage clamping circuit is further operable to unclamp the pair of internal nodes during the write operation; a bit line multiplexer for selectively coupling the driven bit line pair to the pair of internal nodes; and a second stage clamping circuit operable to clamp the plurality of bit line pairs to the clamping voltage, wherein the second stage clamping circuit is further operable to unclamp the driven bit line pair during the write operation.

Abstract: A memory arrangement is provided having a plurality of memory elements, the elements being associated with a memory space that can be addressed in a row and column fashion during a write or a read access. The memory arrangement further includes a first macro bank comprising a first plurality of memory cells comprising a first subset of the memory elements and a second macro bank comprising a second plurality of memory cells comprising a second subset of the memory elements. The memory arrangement further includes an address resolution stage for addressing the memory cells in the respective macro banks. The memory cells are arranged so that the memory space is partitioned into a plurality of non-overlapping basic matrices, whereby each basic matrix is mapped to a given macro bank and wherein the memory cells are arranged logically so that the memory space is partitioned into a plurality of non-overlapping logic matrices of a given size, each logic matrix being of a size equal or larger than a basic matrix.

Abstract: A dual port memory includes a mechanism for preventing collisions. The memory includes dual port bit cells arranged in rows and columns and each bit cell stores a data bit. The memory also includes a wordline unit that may provide a respective write wordline signal and a respective read wordline signal to each row of bit cells. The wordline unit may also selectively inhibit the read wordline signal for a given row based upon address information that is indicative of whether a write operation will be performed to the given row.

Abstract: A dual-port memory is provided. The dual-port memory includes a first single-port memory and a second single-port memory. The first single-port memory is configured to store data in an even address of the dual-port memory. The second single-port memory is configured to store data in an odd address of the dual-port memory. The dual-port memory simultaneously performs a read operation to read data from the odd address and a write operation to write data into the even address. The dual-port memory simultaneously performs a read operation to read data from the even address and a write operation to write data into the odd address.

Abstract: A nonvolatile memory device comprises a first mat, a second mat, a third mat, a first address decoder, a second address decoder, and a third address decoder. The first mat comprises first memory blocks, the second mat comprises second memory blocks, and the third mat comprises third memory blocks. The first address decoder selects one of the first memory blocks according to a first even address, the second address decoder selects one of the second memory blocks according to a second even address or a first odd address, and the third address decoder selects one of the third memory blocks according to a second odd address.

Abstract: A memory circuit includes a first memory array. The first memory array includes at least one first memory cell for storing a first datum. The at least one first memory cell is coupled with a first word line and a second word line. A second memory array is coupled with the first memory array. The second memory array includes at least one second memory cell for storing a second datum. The at least one second memory cell is coupled with a third word line and a fourth word line. The first word line is coupled with the third word line. The first word line is misaligned from the third word line in a routing direction of the first word line in the first memory array.

Abstract: A memory base cell stores a bit of information implemented from a regular and compact structure made up of multiple identical and replicated base elements, on the “sea of gates” model, in which the base element of the structure is a cell able to be configured with a minimum width in relation to the particular technology used. Such a cell includes a bistable element with an input node operatively connected to a writing data line of the memory base cell, and an output node operatively connected to a reading data line of the memory base cell. The bistable element also has a first inverter and a second inverter arranged in a feedback configuration with respect to one another between the input node and the output node of the bistable element.

Abstract: A memory circuit includes a first plurality of memory arrays disposed in a column fashion. The memory circuit includes a first plurality of keepers each of which is electrically coupled with a corresponding one of the first plurality of memory arrays. A first current limiter is electrically coupled with and shared by the first plurality of keepers. A first plurality of sector switches each are electrically coupled between the first current limiter and a respective one of the first plurality of keepers.

Abstract: A method, apparatus and system for reducing memory latency is disclosed. In one embodiment, data between a host computer system and a memory is communicated via a port or a group of ports at the memory over multiple time intervals, wherein the host computer is coupled to the memory. Further, a command associated with the data is communicated between the host computer system and the memory via the port or the group of ports over a single time interval.

Abstract: Circuits for a memory array and a method of operating a configurable memory block are disclosed. An embodiment of the disclosed memory circuits includes a first memory block coupled to a second memory block to form an array of memory blocks. Each of the memory blocks has multiple bit lines with a dedicated address decoder coupled to the bit lines from each of the memory blocks. Switches are placed in between the first and second memory blocks such that each of the bit lines from the first memory block is connected to a corresponding bitline from the second memory block through one of the switches. The switches may be used to either connect the second memory block to the first memory block or disconnect the second memory block from the first memory block.

Abstract: Digital memory devices and systems, including memory systems and methods for operating such memory systems are disclosed. In the embodiments, a memory system may include a processor and a memory controller communicatively coupled to the processor. A memory bus communicates with at least two memory units through the memory bus. At least one divider unit may be interposed between the memory bus and the at least two memory units that is configured to approximately equally divide levels of received signals while matching an impedance of the memory bus to an impedance of the memory units.

Abstract: A system and method to access a multi-port non-volatile memory that includes a resistive memory element is disclosed. In a particular embodiment, a multi-port non-volatile memory device is disclosed that includes a resistive memory cell and multiple ports coupled to the resistive memory cell.

Abstract: A memory macro comprises a plurality of memory array segments, each having a predetermined number of data inputs and outputs. A segment decoder circuit is configured to: receive a first value indicating a number of memory partitions among which the memory array segments are to be divided, and output a plurality of signals for selectively activating one or more of the plurality of memory array segments to be accessed based on the first value. A plurality of output drivers are coupled to the segment decoder circuit and to respective ones of the outputs. The plurality of output drivers are configured to selectively output data from the respective outputs of each of the respective activated memory array segments.

Abstract: A memory device is provided. The memory device comprises a plurality of memory chips. The plurality of memory chips receive an input address code and alternately operate in an active mode. Each memory chip receives a selection signal and operates according to an internal address counter code. For each memory chip, the respective internal address counter code is initially set according to the input address code and the respective selection signal.

Abstract: An SRAM has at least two sets of pass transistors for coupling at least two sets of bit lines to true and complement data nodes of an SRAM cell based on the assertion of at least two word lines. The cell includes two pull up transistors and two pull down transistors coupled to the true and complement data nodes. None of the pass transistors are implemented in an active area that includes a pull up transistor or a pull down transistor of the cell.

Abstract: A memory circuit includes a first plurality of memory arrays disposed in a column fashion. The memory circuit includes a first plurality of keepers each of which is electrically coupled with a corresponding one of the first plurality of memory arrays. A first current limiter is electrically coupled with and shared by the first plurality of keepers.

Abstract: According to one embodiment, a semiconductor memory device includes a first active area in a semiconductor substrate, memory cells on the semiconductor substrate, first bit lines, first line, a second line, a third line, and a fourth line. The first line extends in a direction that intersects with the first bit lines and transmits a control potential applied to unselected ones of second bit lines connected to the memory cells. The second line is electrically connected to the first line and extends along the first bit lines. The third line is electrically connected to the second line and extends in a direction that intersects with the first bit lines. The fourth line electrically connects both the third line and portions in the active area corresponding to nodes to which the control potential is applied.

Abstract: A memory operative to provide multi-port functionality includes multiple single-port memory cells forming a first memory array. The first memory array is organized into multiple memory banks, each of the memory banks comprising a corresponding subset of the single-port memory cells. The memory further includes a second memory array including multiple multi-port memory cells and is operative to track status information of data stored in corresponding locations in the first memory array. At least one cache memory is connected with the first memory array and is operative to store data for resolving concurrent read and write access conflicts in the first memory array.

Abstract: A multi-port memory array is disclosed. The memory array includes a plurality of memory subblocks and an output network. Each memory subblock includes a plurality of single-read-port memory cells. The output network is configured to redirect information read for a first read port to a second read port on a condition that an equivalence signal indicates that read addresses for the first read port and the second read port are the same. The latching and multiplexing operation may be integrated. The memory cells may be 6-transistor synchronous random access memory (SRAM) cells, 8-transistor SRAM cells, or any type of memory cells.

Abstract: A memory module comprises a module interface having module data-group ports to communicate data as respective data groups, a command port to receive memory-access commands, a first memory device including a first device data-group port, a second memory device including a second device data-group port, and a signal buffer coupled between the module interface and each of the first and second devices. In a first mode, in response to the memory-access commands, the signal buffer communicates the data group associated with each of the first and second device data-group ports via a respective one of the module data-group ports. In a second mode, in response to the memory-access commands, the signal buffer alternatively communicates the data group associated with the first device data-group port or the data group associated with the second device data-group port via the same one of the module data-group ports.

Abstract: A memory is described which includes a main memory array made up of multiple single-ported memory banks connected by parallel read and write buses, and a sideband memory equivalent to a single dual-ported memory bank. Control logic and tags state facilitates a pattern of access to the main memory and the sideband memory such that the memory performs like a fully provisioned dual-ported memory capable of reading and writing any two arbitrary addresses on the same cycle.

Abstract: Embodiments of a memory cell comprising a voltage module configured to supply a first supply voltage and a second supply voltage, a data node programming module configured to receive the first supply voltage and to program a data node based at least in part on a write data line, and a complementary data node programming module configured to receive the second supply voltage and to program a complementary data node based at least in part on a complementary write data line, wherein the voltage module is configured such that the first supply voltage is substantially different from the second supply voltage for a period of time while the memory device is being programmed. Additional variants and embodiments may also be disclosed and claimed.

Abstract: A semiconductor device with a novel structure and a driving method thereof are provided. A semiconductor device includes a non-volatile memory cell including a writing transistor including an oxide semiconductor, a reading p-channel transistor including a semiconductor material different from that of the writing transistor, and a capacitor. Data is written to the memory cell by turning on the writing transistor so that a potential is supplied to a node where a source electrode of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor so that a predetermined amount of electric charge is held in the node. In a holding period, the memory cell is brought into a selected state and a source electrode and a drain electrode of the reading transistor are set to the same potential, whereby the electric charge stored in the node is held.

Abstract: A static random access memory (SRAM) cell includes a first read port, the first read port having a first beta ratio; and a write port, the write port having a second beta ratio that is substantially lower than the first beta ratio. A static random access memory (SRAM) array includes a plurality of SRAM cells, an SRAM cell including a first read port, the first read port having a first beta ratio; and a write port, the write port having a second beta ratio that is substantially lower than the first beta ratio.

Abstract: A multiport memory architecture, systems including the same and methods for using the same. The architecture generally includes (a) a memory array; (b) a plurality of ports configured to receive and/or transmit data; and (c) a plurality of port buffers, each of which is configured to transmit the data to and/or receive the data from one or more of the ports, and all of which are configured to (i) transmit the data to the memory array on a first common bus and (ii) receive the data from the memory array on a second common bus. The systems generally include those that embody one or more of the inventive concepts disclosed herein. The methods generally relate to writing blocks of data to, reading blocks of data from, and/or transferring blocks of data across a memory.

Abstract: Approaches to organizing/constructing a register file base cell in a way that reduces the number of signals which need to be routed to and through the bit base cell are disclosed. Base cells so constructed allow industry standard static timing approaches and tools to verify the timing of a register file comprised of such base cells as a whole and allow industry standard place-and-route (APR) tools to be used to implement the connections between the base cells and the other register file logic not directly included in the base cell.

Abstract: An integrated circuit structure includes a first static random access memory (SRAM) cell including a first read-port and a first write-port; and a second SRAM cell including a second read-port and a second write-port. The first SRAM cell and the second SRAM cell are in a same row and arranged along a row direction. A first word-line is coupled to the first SRAM cell. A second word-line is coupled to the second SRAM cell. A read bit-line is coupled to the first SRAM cell and the second SRAM cell, wherein the read bit-line extends in a column direction perpendicular to the row direction. A write bit-line is coupled to the first SRAM cell and the second SRAM cell.

Abstract: Apparatus and methods are disclosed, such as those involving array/port consolidation and/or swapping. One such apparatus includes a plurality of port pads including a plurality of contacts; a plurality of memory arrays; and a plurality of master data lines. Each of the master data lines extends in a space between one of the port pads and a respective one of the memory arrays. Each of the master data lines is electrically connectable to the contacts of a respective one of the port pads. The apparatus further includes a plurality of local data lines, each of which extends over a respective one of the memory arrays. Each of the local data lines is electrically connectable to a respective one of the master data lines. At least one of the local data lines extends over at least two of the memory arrays. This configuration allows memory array consolidation and/or swapping without increasing die space for additional routing and adversely affecting performance of the apparatus.

Abstract: A clock handoff circuit outputting data in synchronism with a first clock input thereto as output data in synchronism with a second clock, includes: a dual port RAM capable of performing writing and reading independently of each other; a write address control section controlling write addresses of the dual port RAM in which the input data is written; a blank address detecting section detecting blank addresses among the write addresses in which the input data is not written; and a read address conversion section converting the write addresses of the dual port RAM excluding the blank address into read addresses from which the output data are read out.

Abstract: In one embodiment of the invention, a memory integrated circuit is provided including a memory array, a register, and control logic coupled to the register. The memory array in the memory integrated circuit stores data. The register includes one or more bit storage circuits to store one or more identity bits of an identity value. The control logic provides independent sub-channel memory access into the memory integrated circuit in response to the one or more identity bits stored in the register.

Abstract: A semiconductor device, includes a first memory cell array, a second memory cell array, a command decoder configured to produce a transfer command to transfer a data stored in a first area of the first memory cell array to a second area of the second memory cell array, when receiving a read command to the first memory cell array and sequentially a write command to the second cell memory array, a first address generator configured to produce a first internal address for designating the first area of the first memory cell array when receiving the transfer command from the command decoder; and a second address generator configured to produce a second internal address for designating the second area of the second memory cell array when receiving the transfer command from the command decoder.

Abstract: Consistent with the present disclosure, a plurality of FIFO buffers, for example, are provided in a switch, which also includes a switch fabric. Each of the plurality of FIFOs is pre-filled with data for a duration based on a skew or time difference between the time that a data unit group is supplied to its corresponding FIFO and a reference time. The reference time is the time, for example, after a delay period has lapsed following the leading edge of a synch signal, the timing of which is a known system parameter and is used to trigger switching in the switch fabric. Typically, the delay period may be equal to the latency (often, another known system parameter) or length of time required for the data unit to propagate from an input circuit, such as a line card of the switch or another switch, to the FIFO that receives the data unit. At the reference time, temporally aligned data unit groups may be read or output from each FIFO and supplied to the switch fabric.

Abstract: A data value is read from one port of a dual-port memory cell during a clock cycle. A WRITE assist pulse having a delay from an end-of-read signal is generated. The delay and duration of the WRITE assist pulse are optionally user-selectable. A high voltage (e.g., Vdd) is coupled to the bitlines (e.g., BL-A, BLc-A) of the first port during the WRITE assist pulse, and a low voltage value (e.g., zero) is written to the memory cell through the second port (e.g., BL-B, BLc-B) during the clock cycle.

Abstract: A semiconductor memory having a memory cell structure capable of reducing soft error without complicating a circuit configuration. Specifically, an inverter (I1) consists of a NMOS transistor (N1) and a PMOS transistor (P1), and an inverter (I2) consists of a NMOS transistor (N2) and a PMOS transistor (P2). The inverters (I1, I2) are subjected to cross section. The NMOS transistor (N1) is formed within a P well region (PW0), and the NMOS transistor (N2) is formed within a P well region (PW1). The P well regions (PW0, PW1) are oppositely disposed with an N well region (NW) interposed therebetween.