Abstract: Systems and methods are disclosed herein for controlling laser beams for a plurality of collocated laser assemblies. The laser beams are optimized by controlling outputs of a primary power source (current for generating a laser beam) and a secondary power source (heating device) for each of the respective laser assemblies. The states of the power supply may be cycled and modulated to provide optimal performance.

Abstract: A laser module includes a Transmitter Optical Sub-Assembly (TOSA) and a heat radiating means. The TOSA generates light by an electrical signal and transmits the generated light through an optical fiber. The heat radiating means is in contact with the TOSA to discharge heat generated by the TOSA.

Abstract: A reservoir unit which is included as an element along a circulation path of a cooling system includes a cartridge and a cartridge loading unit which are configured to be removable from each other. The cartridge includes a reservoir chamber that stores a circulating liquid, and a connection portion in fluid communication with the reservoir chamber. The cartridge loading unit includes a connection receiving portion, to which the connection portion is connected, and a connection port. When the cartridge and the cartridge loading unit are attached to each other, the connection portion, the connection receiving portion and the connection port form a feed path that allows feeding the circulating liquid to the circulation path outside, and a collection path that allows collecting the circulating liquid into the reservoir chamber.

Abstract: An algorithm to reduce a peak current for a transmitter module with multiple laser diodes (LDs) is disclosed. When the current temperature of the LDs is higher than the target temperature, the thermo-electric cooler (TEC) controller is first activated then the LD driver to drive the LDs is subsequently activated with a substantial delay. When the ambient temperature of the LDs is lower than the target temperature, the LD driver is first driven; then, the TEC controller is subsequently activated.

Abstract: A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.

Abstract: In a CO2 gas-discharge slab-laser comprising an unstable resonator constrained by a waveguide formed by planar discharge-electrodes, parasitic side-lobes appear on either side of a delivered main mode in a direction perpendicular to the electrode plane. A rotationally adjustable aperture is provided for transmitting the main mode and blocking the parasitic side-lobes.

Abstract: In a laser-produced plasma (LPP) extreme ultraviolet (EUV) system, laser pulses are used to produce EUV light. To determine the energy of individual laser pulses, a photoelectromagnetic (PEM) detector is calibrated to a power meter using a calibration coefficient. When measuring a unitary laser beam comprising pulses of a single wavelength, the calibration coefficient is calculated based on a burst of the pulses. A combined laser beam has main pulses of a first wavelength alternating with pre-pulses pulses of a second wavelength. To calculate the energy of the main pulses in the combined laser beam, the calibration coefficient calculated for a unitary laser beam of the main pulses is used. To calculate the energy of the pre-pulses in the combined laser beam, a new calibration coefficient is calculated. When the calculated energy values drift beyond a pre-defined threshold, the calibration coefficients are recalculated.

Abstract: In a laser-produced plasma (LPP) extreme ultraviolet (EUV) system, laser pulses are used to produce EUV light. To determine the energy of individual laser pulses, a photoelectromagnetic (PEM) detector is calibrated to a power meter using a calibration coefficient. When measuring a unitary laser beam comprising pulses of a single wavelength, the calibration coefficient is calculated based on a burst of the pulses. A combined laser beam has main pulses of a first wavelength alternating with pre-pulses pulses of a second wavelength. To calculate the energy of the main pulses in the combined laser beam, the calibration coefficient calculated for a unitary laser beam of the main pulses is used. To calculate the energy of the pre-pulses in the combined laser beam, a new calibration coefficient is calculated. When the calculated energy values drift beyond a pre-defined threshold, the calibration coefficients are recalculated.

Abstract: A device for amplifying a laser beam along an axis comprises: an amplifying bar structure of index nc, delimited by a surface connecting the input and output faces of the structure, having a dimension e along the axis and ? along a perpendicular direction, with e<?, and intended to be pumped to become a gain medium with a maximum along a face, and a liquid of index nA which surrounds the structure in relation to its surface and which is absorbent or scattering at the fluorescence wavelength of the amplifying bar structure. The surface comprises a first tooth in the form of a chamfer at its junction with the maximum gain face, to avoid causing parasitic transverse lasing and the liquid of index nA has a heat capacity of greater than 3000 Joules per kilogram per K° to dissipate the thermal power induced by the pumping.

Abstract: A noise suppression method is used in an optical transmission system which includes node equipments transmitting a WDM optical signal. First node equipment drops a first optical signal from the WDM optical signal. The method includes: transmitting a failure signal that specifies the first optical signal from second node equipment to the first node equipment via a first route when the second node equipment arranged on the first route for transmitting the first optical signal to the first node equipment has detected a failure of the first optical signal; transmitting a shutoff signal that specifies the first optical signal from the first node equipment toward the second node equipment via the first route; and shutting off an optical output of a wavelength corresponding to the first optical signal in third node equipment that has relayed the failure signal and has received the shutoff signal.

Abstract: A semiconductor element is sandwiched between a lower and upper surface of a cooling body. A connection circuit and a communication device are provided on the lower surface of the cooling body. A drive circuit and a communication device are provided on the upper surface of the cooling body. These components are encapsulated by a resin. The connection circuit generates a control signal in response to a signal from outside. The communication device transmits the control signal. The communication device receives the control signal and supplies the control signal to the drive circuit, which drives the semiconductor element in response to the control signal. The resin electrically insulates the connection circuit and the communication device from the communication device and the drive circuit enabling prevention of breakdown of the connection circuit caused by an application of a high voltage from the drive circuit to the connection circuit.

Abstract: Provided is an optical module in which a temperature of a semiconductor element to be subjected to temperature control is controlled to fall within a desired operating temperature range regardless of whether an environmental temperature is outside or inside the operating temperature range of the semiconductor element, and which is stably operated with low power consumption. A control section 30 determines, based on the environmental temperature having a temperature range of from a first temperature to a second temperature, a target temperature from a predetermined operating temperature range of from a third temperature to a fourth temperature. The control unit 30, an ATC circuit 34, a TEC control IC 12, and a TEC 24 control the temperature of a laser module 20 to become the target temperature. The first temperature is lower than the third temperature, and the second temperature is higher than the fourth temperature.

Abstract: A laser gain element including an undoped layer of a monoclinic double tungstate (MDT) crystal, and a method of forming a laser gain element are provided. The laser gain element includes a layer of doped MDT crystal adjacent to the undoped layer, the doped MDT layer including a pre-selected concentration of rare earth ions. The layer of doped MDT crystal has an absorption peak at a first wavelength and an emission peak at a second wavelength longer than the first wavelength; and the layer of doped MDT crystal has a fluorescence emission with a weighted average at a third wavelength shorter than the first wavelength. A laser resonator cavity formed with a plurality of composite gain elements as above is also provided.

Abstract: The present invention provides an air conditioned headgear and clothing. The headgear includes a thermoelectric cooling module and a control chip. The control chip includes a power supply circuit to supply driving current to the thermoelectric cooling module. The inner temperature of the headgear, the temperature of a heat sink, and the environmental temperature are sensed. A microcontroller of the control chip controls the power supply circuit to provide the driving current to the thermoelectric cooling module via processing the inner temperature of the headgear, a preset temperature, the temperature of the heat sink, and the environmental temperature using the PID control. In the present invention, the temperature is controlled using the PID control, thus wide fluctuations of the temperature is avoided, energy can be used effectively, and thermal cycle can be avoided.

Abstract: A laser includes a Ti:sapphire gain-medium in the form of a thin-disk. The thin-disk gain-medium is optically pumped by pump-radiation pulses having a wavelength in the green region of the electromagnetic spectrum. The pump-radiation pulses have a duration less than twice the excited-state lifetime of the gain-medium.

Abstract: An optical transmitter module installing a thermo-electric controller (TEC) is disclosed. The optical module has a rectangular box portion as a package made of a multi-layered ceramics, within which the TEC is installed. The TEC has electrodes through which a current to driver the TEC electrically is provided. The module has a feature that the electrodes of the TEC is directly in contact with a pad provided in the back surface of the multi-layered ceramic housing.

Abstract: A correction circuit includes a correction section configured to superpose a second current pulse on a first current pulse, and thereby correcting a waveform of the first current pulse, the first current pulse being output from a current source configured to drive a surface-emitting semiconductor laser in a pulsed manner, the correction section being configured to allow the second pulse to have a waveform obtained through attenuating a crest value of the second current pulse with time, increasing an initial crest value of the second current pulse by an amount that is larger as magnitude of the first current pulse is larger, and allowing the amount by which the initial crest value is increased to be smaller as ambient temperature of the semiconductor laser is higher, and being configured to output the second pulse having the waveform.

Abstract: A laser light source includes a thermoelectric cooling device, a composite green laser made up of an infrared wavelength pumped laser diode and a solid-state laser cavity designed for efficient nonlinear intra-cavity frequency conversion into desired wavelengths using periodically poled nonlinear crystals thermally coupled with the cooling device and a red wavelength laser diode thermally coupled with said cooling device. In this manner, the cooling device maintains a common temperature of the infrared pumped laser diode and the red laser diode over an ambient temperature range.

Abstract: A method to tune an emission wavelength of a laser diode (LD) finely is disclosed. The method first controls a temperature of the etalon filter in T1 or T2, where the transmittance of the etalon filter becomes 40 to 50%, assuming a height between the peak and the bottom of the periodic transmittance to be 100%, at the grid wavelength ?1 or ?2, respectively. Then, the temperature of the LD is adjusted such that the intensity of light emitted from the LD and transmitted through the etalon filter becomes 40 to 50%.

Abstract: A silicon-based thermal energy transfer apparatus that aids dissipation of thermal energy from a heat-generating device, such as an edge-emitting laser diode, is provided. In one aspect, the apparatus comprises a silicon-based base portion having a first primary surface and a silicon-based support structure. The silicon-based support structure includes a mounting end and a distal end opposite the mounting end with the mounting end received by the base portion such that the support structure extends from the first primary surface of the base portion. The support structure includes a recess defined therein to receive the edge-emitting laser diode. The support structure further includes a slit connecting the distal end and the recess to expose at least a portion of a light-emitting edge of the edge-emitting laser diode when the edge-emitting laser diode is received in the support structure.

Abstract: A method, system and apparatus for automatically determining operating conditions of a periodically poled lithium niobate crystal in a laser system are provided. The system comprise: a laser; a periodic poled lithium niobate (PPLN) crystal for receiving laser input from the laser; a temperature control device for adjusting the temperature of the PPLN crystal; a temperature sensor for monitoring the temperature of the PPLN crystal; and a computing device. While the PPLN crystal is receiving laser input, temperature of the PPLN crystal is changed using the temperature control device. The computing device monitors the temperature of the PPLN crystal and corresponding power of the temperature control device during the changing, the temperature monitored using the temperature sensor. The computing device determines one or more of operating conditions of the temperature control device and an operating temperature of the PPLN crystal from a function of the power vs. the temperature.

Abstract: A fiber coupled semiconductor device and a method of manufacturing of such a device are disclosed. The method provides an improved stability of optical coupling during assembly of the device, whereby a higher optical power levels and higher overall efficiency of the fiber coupled device can be achieved. The improvement is achieved by attaching the optical fiber to a vertical mounting surface of a fiber mount. The platform holding the semiconductor chip and the optical fiber can be mounted onto a spacer mounted on a base. The spacer has an area smaller than the area of the platform, for mechanical decoupling of thermally induced deformation of the base from a deformation of the platform of the semiconductor device. Optionally, attaching the fiber mount to a submount of the semiconductor chip further improves thermal stability of the packaged device.

Abstract: A microlaser system includes an optical source, a microlaser, an actuator switch, and a photovoltaic power source. The microlaser, which includes a control element, is optically pumped by at least a portion of light emitted by the optical source. The actuator switch is configured to be activated by a triggering event. Furthermore, the photovoltaic power source is coupled in a series connection with the actuator switch and the control element, the series connection configured to connect the photovoltaic power source to the control element of the microlaser when the actuator switch is activated by the triggering event.

Abstract: The laser mount arrangement can have a laser bar and a driver positioned adjacent to one another and secured against a connection face of a heat sink base. The heat sink base is connected to and forms a first electrical connection between the laser bar and the driver. A second electrical connection is also provided between the laser bar and the driver opposite the heat sink base, which can be in the form of a flexible metal sheet with a narrow upward fold. This arrangement can provide a low inductance path for the current.

Abstract: Implementing a layered hyperbolic metamaterial in a vertical cavity surface emitting laser (VCSEL) to improve thermal conductivity and thermal dissipation thereby stabilizing optical performance. Improvement in the thermal management and power is expected by replacing the distributed Bragg reflector (DBR) mirrors in the VCSEL. The layered metamaterial structure performs the dual function of the DBR and the heat spreader at the same time.

Abstract: A conduction cooled high power semiconductor laser and a method for fabricating the same are provided. The conduction cooled high power semiconductor laser comprises a heat sink (2) and one or more semiconductor laser units (1). The semiconductor laser unit consists of a laser chip (3), a substrate (4) bonded to the laser chip for heat dissipation and electrical connection, and an insulation plate (5) soldered to the substrate for insulation and heat dissipation. The semiconductor laser unit is soldered on the heat sink with the insulation plate therebetween. The semiconductor laser unit may be tested, aged, and screened in advance, and thereby the yield of the lasers can be improved and the manufacturing costs can be reduced. The laser has desirable heat dissipation performance, high reliability, and is applicable to high temperature and other complex and volatile environments.

Abstract: The existing diodes in an LED or laser diode package are used to measure the junction temperature of the LED or laser diode. The light or laser emissions of a diode are switched off by removing the operational drive current applied to the diode package. A reference current, which can be lower the operational drive current, is applied to the diode package. The resulting forward voltage of the diode is measured using a voltage measurement circuit. Using the inherent current-voltage-temperature relationship of the diode, the actual junction temperature of the diode can be determined. The resulting forward voltage can be used in a feedback loop to provide temperature regulation of the diode package, with or without determining the actual junction temperature. The measured forward voltage of a photodiode or the emissions diode in a diode package can be used to determine the junction temperature of the emissions diode.

Abstract: A temperature-compensated laser driving circuit for driving a laser component is provided. The temperature-compensated laser driving circuit includes: a temperature compensation circuit, configured to generate a second current based on a first current and a temperature-independent current; and a modulation current generating circuit, configured to generate a modulation current based on the second current, and calibrate optical power output of the laser component based on the modulation current. The first current is proportional to the absolute temperature. The second current and the first current have a slope relative to the absolute temperature respectively, and the slope of the second current relative to the absolute temperature is larger than of the slope of the first current relative to the absolute temperature.

Abstract: An interposer (support substrate) for an opto-electronic assembly is formed to include a thermally-isolated region where temperature-sensitive devices (such as, for example, laser diodes) may be positioned and operate independent of temperature fluctuations in other areas of the assembly. The thermal isolation is achieved by forming a boundary of dielectric material through the thickness of the interposer, the periphery of the dielectric defining the boundary between the thermally isolated region and the remainder of the assembly. A thermo-electric cooler can be used in conjunction with the temperature-sensitive device(s) to stabilize the operation of these devices.

Abstract: A semiconductor laser excited solid state laser device and method. The device including a semiconductor laser; a driving device; a solid state laser module which has maximum output efficiency at the set temperature and which generates, from excitation light, an output light of a predetermined output level when the optical noise is at or below a fixed level and the output level of the excitation light is the set output level; a single temperature adjustment device which adjusts the temperature of the semiconductor laser and the temperature of the solid state laser module; and a control device which controls the driving device such that the output light will be at the predetermined output level and controls the temperature adjustment device such that the temperature of the semiconductor laser and the solid state laser module will be the set temperature.

Abstract: A semiconductor laser includes: a first reflector that is provided in a gain region and has a sampled grating in which a plurality of segments are combined; and a second reflector that is optically connected to the first reflector and has a sampled grating in which a plurality of segments are combined, the plurality of segments of the first reflector having a short-segment region and a long-segment region, the long-segment region having an optical length that is larger than that of the short-segment region and being positioned closer to the second reflector than at least one of the short-segment region, the optical length of the long-segment region being larger than that of the short-segment region in a range of integral multiple (n?1) plus-minus 25% of the optical length of the short-segment.

Abstract: A method for controlling a wavelength tunable laser is disclosed, wherein a temperature of an optical waveguide is used in the wavelength tunable laser as a driving condition. The method comprises: acquiring a first driving condition from a memory, the wavelength tunable laser being operable to emit light of a first wavelength in the first driving condition; calculating a second driving condition using the first driving condition and a wavelength difference between the first wavelength and a second wavelength different from the first wavelength, the wavelength tunable laser being operable to emit light of the second wavelength in the second driving condition, the second driving condition being calculated under a condition that a temperature of the optical waveguide is always lower than a temperature of the optical waveguide represented by the first driving condition; and driving the wavelength tunable laser based on the second driving condition.

Abstract: Various embodiments of a multi-laser system are disclosed. In some embodiments, the multi-laser system includes a plurality of lasers, a plurality of laser beams, a beam positioning system, a thermally stable enclosure, and a temperature controller. The thermally stable enclosure is substantially made of a material with high thermal conductivity such as at least 5 W/(m K). The thermally stable enclosure can help maintain alignment of the laser beams to a target object over a range of ambient temperatures.

Abstract: A vertical cavity surface emitting laser (VCSEL) device includes a bottom distributed Bragg reflector (DBR); a top DBR; an optical cavity with an active layer stack formed between the bottom DBR and the top DBR, arranged for generating light with a predetermined emission wavelength; a top electrode layer with a first window formed above the top DBR; and a first heat dissipation layer sandwiched between the top DBR and the top electrode layer. The VCSEL device utilizes thicker, heavily doped semiconductor contact window for efficient heat dissipation from active region. Besides heat dissipation on the top side of VCSEL device, it also increases the bandwidth of VCSEL through top DBR reflectivity changes that reduce the photon lifetime via a surface relief structure etching on the top side of VCSEL device. Further, the invented VCSEL contains adjusted Aluminum molefractions in multiple sections of top and bottom DBRs to effectively dissipate heat from active region of VCSEL.

Abstract: A semiconductor laser module includes: a semiconductor laser element having at least one semiconductor laser; a first support member on which the semiconductor laser element is mounted; a first temperature-adjusting element adjusting a temperature of the first support member; a semiconductor optical element having a semiconductor optical amplifier amplifying a laser light outputted from the semiconductor laser element; and a second support member on which the semiconductor optical element is mounted.

Abstract: A microcrystal laser assembly including a gain-crystal includes a frame having a high thermal conductivity. The frame has a base with two spaced apart portions extending from the base. The gain-crystal has a resonator output mirror on one surface thereof. The gain-crystal is supported on the spaced-apart portions of the frame in the space therebetween. Another resonator minor is supported in that space, spaced apart from the output mirror, on a pedestal attached to the base of the frame. The pedestal and the frame have different CTE. Varying the frame temperature varies the spacing between the resonator mirrors depending on the CTE difference between the pedestal and the frame.

Abstract: A silicon-based thermal energy transfer apparatus that aids dissipation of thermal energy from a heat-generating device, such as an edge-emitting laser diode, is provided. In one aspect, the apparatus comprises a base portion and a support portion. The base portion is made of silicon and includes a first primary surface. The first primary surface includes at least first and second V-notch grooves thereon. The support portion is made of silicon and includes at least first and second edges that are interlockingly received in the first and second V-notch grooves when the support portion is mounted on the base portion.

Abstract: A light-emitting device module includes a temperature variable device including a temperature control surface subjected to temperature control, a light-emitting device including a first electrode and mounted on a portion of the temperature control surface, a first terminal for supplying electric power to the first electrode, and a wire that causes the first terminal and the first electrode to conduct. The wire is thermally connected to the other portion of the temperature control surface.

Abstract: A laser system includes a laser element, a pump source configured to input light to the laser element, a first cooling circuit and a second cooling circuit. The first cooling circuit includes a first pump configured to drive a first flow of cooling liquid through a first fluid pathway, a first primary heat exchanger configured to cool the first flow of cooling liquid, and a laser element heat exchanger configured to remove heat from the laser element using the first flow of cooling liquid. The second cooling circuit includes a second pump configured to drive a flow of cooling liquid through a second fluid pathway, a second primary heat exchanger configured to cool the second flow of cooling liquid, and a pump source heat exchanger configured to remove heat from the pump source using the first and second flows of cooling liquid.

Abstract: An optical element module includes a casing having a bottom plate, a temperature-adjusting unit being mounted on the bottom plate in the casing and having at least a lower layer portion and an upper layer portion positioned above the lower layer portion, a support member mounted on the temperature-adjusting unit in the casing, and a semiconductor laser element being mounted on the support member and outputting a laser light to a forward side. The upper layer portion of the temperature-adjusting unit projects at a backward side of the semiconductor laser element relative to the lower layer portion.

Abstract: A surface emitting semiconductor laser includes a substrate, a first conductivity-type first semiconductor multilayer reflector, an active layer, a semiconductor layer, a second conductivity-type second semiconductor multilayer reflector that includes a current confinement layer, and a heat dissipating metal member. At least the first semiconductor multilayer reflector, the active layer, the semiconductor layer, and the second semiconductor multilayer reflector are stacked in this order on the substrate. A columnar structure having a top portion, a side surface, and a bottom portion is formed from the second semiconductor multilayer reflector to the semiconductor layer. The heat dissipating metal member is connected to the semiconductor layer exposed at the bottom portion of the columnar structure.

Abstract: A diode-laser bar package includes a water cooled metal heat-sink. An electrical-insulator-plate is bonded to the heat-sink with a soft solder. A metal sub-mount and a first electrode are bonded, spaced apart, on the electrical-insulator-plate. A solder-bridge fills the space between the first electrode and the sub-mount. A diode-laser bar is bonded to the sub-mount. A second electrode is bonded to the first electrode with an electrically insulating bond. Electrical connection between the second electrode and the diode-laser bar is made by a plurality of wire-bond electrical leads.

Abstract: A method, and systems to implement the method, for reducing slow axis divergence in a laser diode bar including tailoring a power deposition profile across the emitter so as to reduce thermal gradients, thereby resulting in a substantially (nearly) uniform temperature across the width of the emitter.

Abstract: An optical semiconductor device comprises: a first insulating film provided on a semiconductor layer; a heater provided on the first insulating film; a second insulating film provided on the heater; and an electrode provided on the heater. The electrode extends on the second insulating film; the electrode is in contact with the heater; the second insulating film includes a first region on which the electrode is located; and a thickness of the first region of the second insulating film is greater than that of the first insulating film.

Abstract: The present technology relates to a fast and efficient heating element based on a thick heterostructure which is monolithically integrated in close proximity to one or more components of a photonic or an electronic circuit. Inventive embodiments also relate to methods of use illustrative heating elements to control or tune the characteristics of the electronic or photonic component(s). Inventive embodiments may be particularly useful in the fast spectral tuning of the emission wavelength of single mode QCLs.

Abstract: A temperature controlled multi-channel transmitter optical subassembly (TOSA) may be used in a multi-channel optical transceiver. The temperature controlled multi-channel TOSA generally includes an array of lasers optically coupled to an optical multiplexer, such as an arrayed waveguide grating (AWG), to combine multiple optical signals at different channel wavelengths. The lasers may be thermally tuned to the channel wavelengths by establishing a global temperature for the array of lasers and separately raising local temperatures of individual lasers in response to monitored wavelengths associated with the lasers. A temperature control device, such as a TEC cooler coupled to the laser array, may provide the global temperature and individual heaters, such as resistors adjacent respective lasers, may provide the local temperatures. The optical transceiver may be used in a wavelength division multiplexed (WDM) optical system, for example, in an optical line terminal (OLT) in a WDM passive optical network (PON).

Abstract: There is disclosed an apparatus for femtosecond laser optically pumped by a laser diode pumping module that is able to mechanically couple optical mounts for mounting optical mounts to each other by using a bar with a low thermal expansion coefficient and to form a light pumping module distant from a laser platform or a case, to provide a stable mode locking for an ultrashort laser and to enhance a power stability and a beam stability.

Abstract: A cooling module for fabricating a liquid-cooled semiconductor laser, a fabricating method, and a semiconductor laser fabricated from the module are provided, wherein the cooling module for a laser makes use of a liquid cooling plate provided with radiating fins to cool the semiconductor chip. After replacement of the traditional micro-channel structure with the radiating fin structure, the cooling module effectively reduces the resistance to flow of the cooling liquid, remarkably lowers the pressure decrease of the cooling liquid, makes it easier to seal the cooling liquid, provides stronger heat dissipating capability, effectively prolongs the lifetime of the semiconductor laser, and enhances the output power and reliability of the semiconductor laser, alongside the advantages of simple fabrication and low production cost.

Abstract: A vertical cavity surface emitting laser (VCSEL) device includes a bottom distributed Bragg reflector (DBR); a top DBR; an optical cavity with an active layer stack formed between the bottom DBR and the top DBR, arranged for generating light with a predetermined emission wavelength; a top electrode layer with a first window formed above the top DBR; and a first heat dissipation layer sandwiched between the top DBR and the top electrode layer. The VCSEL device utilizes thicker, heavily doped semiconductor contact window for efficient heat dissipation from active region. Besides heat dissipation on the top side of VCSEL device, it also increases the bandwidth of VCSEL through top DBR reflectivity changes that reduce the photon lifetime via a surface relief structure etching on the top side of VCSEL device. Further, the invented VCSEL contains adjusted Aluminium molefractions in multiple sections of top and bottom DBRs to effectively dissipate heat from active region of VCSEL.

Abstract: A heat sink mount for a laser diode comprises three main components, a diode ring, a diode bed and a diode container. The diode ring comprises an inner hole that matches a metal stem part of the laser diode. The diode bed comprises a first part and a second part. The diode ring is fitted into the first part of the diode bed. The inner surface of the first part is tightly contacting the outer surface of the diode ring. The diode container comprises a part a and a part b. The diode bed is fitted into the part a of the diode container, via the gripping contact between the thread on the inner surface of the part a and the thread on the outer surface of the second part of diode bed. This heat sink mount has lower costs and higher heat dissipation efficiency.