Abstract: Methods and systems for fabricating a film, such as, for example, a photocathode, having a tailored band structure and thin-film components that can be tailored for specific applications, such as, for example photocathode having a high quantum efficiency, and simple components fabricated by those methods.

Abstract: Aspects of the disclosure include systems and methods for removing a sample from a carrier material and depositing the sample onto a substrate. The sample can be placed in an aperture of a substrate guide on a stage within a cavity. Etching fluid can be introduced into the cavity to etch the carrier material from the sample and then drained. A rinsing material can be introduced into the cavity to rinse the etching fluid and then drained. A sample deposition process can be performed wherein rinsing fluid is introduced into the cavity to raise the sample guide and sample above the level of a substrate on a substrate holder. The substrate holder can be positioned relative to the sample guide so that the sample within the aperture aligns with the substrate on the substrate holder. The rinsing fluid is drained so that the sample is lowered onto the substrate.

Abstract: A vapor deposition device includes: a retaining portion, which is configured to retain a substrate; a basket filament-type heater, which is formed of a linear heat-generating element, which is configured to generate heat through application of a current, and which includes an accommodating portion formed so as to allow a vapor deposition material to be accommodated by bending the linear heat-generating element, the filament-type heater being arranged so that the accommodating portion is positioned at a predetermined distance in a horizontal direction of the basket filament-type heater from the substrate retained on the retaining portion; and a reflective plate, which is arranged on a rear side of the vapor deposition material accommodated in the accommodating portion, when viewed from the substrate retained on the retaining portion, and which is constructed so as to receive heat from the basket filament-type heater.

Abstract: A heat equalizer includes a container structure, a material feed pipe, and a heating mechanism. The container structure includes an inner container and an outer container. In the outer container, a working fluid is held. Respective upper ends of the inner container and the outer container are joined to form a hollow portion between the inner container and the outer container. The material feed pipe extends from an outside of the container structure to the inner surface of the inner container. The heating mechanism is placed at the bottom of the outer container. At the bottom surface of the inner container, a plurality of protrusions protruding toward the inside of the inner container and depressions formed by the bottom surface depressed inward of the protrusions and capable of receiving the vaporized working fluid are formed.

Abstract: A heat equalizer includes a container structure having a heating block in which a working fluid is held for heating and vaporizing a material to be heated, a heater placed at the bottom of the container structure, and a material feed pipe allowing the outside and the inside of the container structure to communicate with each other. In the heating block, as a flow path in which the material to be heated flows, a main header pipe connected to the material feed pipe and extending in the horizontally, and a riser pipe branching from the main header pipe and extending vertically are formed. As a condensation path in which the working fluid is cooled and condensed, condensation holes formed respectively on the opposite sides of the riser pipe and extending horizontally, and a condensation pit formed under the riser pipe are formed. Between the condensation holes and the condensation pit, the main header pipe is placed.

Abstract: An apparatus and method improves heating of a solid precursor inside a sublimation vessel. In one embodiment, inert, thermally conductive elements are interspersed among units of solid precursor. For example the thermally conductive elements can comprise a powder, beads, rods, fibers, etc. In one arrangement, microwave energy can directly heat the thermally conductive elements.

Abstract: A vapor deposition source including a crucible configured to hold a quantity of molten constituent material and at least one nozzle to pass vapor evaporated from the molten constituent material out of the crucible.

Abstract: A vapor deposition source including a crucible configured to hold a quantity of molten constituent material and at least one nozzle to pass vapor evaporated from the molten constituent material out of the crucible.

Abstract: A vaporizer body (1) having a vaporizing surface (3) for vaporizing metal in a PVD-metallization installation, wherein the vaporizing surface (3) comprises a plurality of recesses (5, 5?, 5?), with an opening of the respective recess having an area/perimeter-ratio of greater than or equal to 1.5 mm.

Abstract: An apparatus and method improves heating of a solid precursor inside a sublimation vessel. In one embodiment, inert, thermally conductive elements are interspersed among units of solid precursor. For example the thermally conductive elements can comprise a powder, beads, rods, fibers, etc. In one arrangement, microwave energy can directly heat the thermally conductive elements.

Abstract: A vapor deposition source including a crucible configured to hold a quantity of molten constituent material and at least one nozzle to pass vapor evaporated from the molten constituent material out of the crucible.

Abstract: Embodiments of the invention provide a method and an apparatus for generating a gaseous chemical precursor for a processing system. In one embodiment, an apparatus for generating the gaseous chemical precursor used in a vapor deposition processing system is provided and includes a canister having a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending from the inlet port into the canister, wherein the inlet tube contains an outlet positioned to direct a gas flow away from the outlet port and towards the sidewall of the canister.

Abstract: An initial wetting auxiliary material is for applying to a vaporiser surface of an electrically heatable ceramic vaporiser body. The vaporiser body is used for operation in a physical vapour deposition (PVD) metallisation installation for vaporising aluminium. The vaporiser body contains nitrogen as a material component. The auxiliary material comprises a powder mixture which comprises (a) aluminium in powder form having a particle size which is at most 0.6 mm. The aluminium in powder form melts on the vaporiser surface after initiating the operation of the vaporiser body and reacted with the nitrogen of the vaporiser body to form an aluminium nitride layer on the vaporiser surface. The powder mixture further comprises (b) a wetting agent in powder form promoting an even and large-surface distribution of the molten aluminium on the vaporiser surface.

Abstract: A liquid material vaporizer comprises a gas-liquid mixing section (1) for mixing a liquid material (LM) and a carrier gas (CG) to generate a gas-liquid mixture (GL); a heating type vaporizing section (2) for vaporizing the gas-liquid mixture (GL) from the gas-liquid mixing section (1) and exhausting outside with an assistance of the carrier gas (CG) a gas generated by the vaporization; a connecting section (3) for making a connection between the gas-liquid mixing section (1) and the vaporizing section (2), the connecting section (3) having inside a flow path for the gas-liquid mixture (GL); and a connecting section cooling section (4) for cooling the connecting section (3). Thus, the liquid material vaporizer which performs suitable vaporization by preventing residue from being generated even in the case of vaporizing a liquid material composed of a plurality of materials having different boiling points.

Abstract: Bake apparatus for use in baking a substrate, such as a semiconductor wafer, includes a chamber, a hot plate installed within the chamber, and first and second buffer plates for uniformly dispersing hot gas. The hot plate is configured to support the semiconductor wafer. The gas is injected into the chamber through an air passageway and is exhausted through an air exhaust opening. The first buffer plate is disposed within an upper part of the chamber so as to uniformly disperse the gas within the chamber. The second buffer plate is disposed above the first buffer plate. The first and second buffer plates each have a number of discharge holes by which the gas is uniformly discharged from the chamber to the exhaust opening.

Abstract: An apparatus for producing powders of metal compound containing oxygen comprising a liquid flow controller, a vaporizer and a reactor, which consists essentially of: means for feeding a gas containing a material and oxygen; means for heating the gas from the side surface of the feeding means; means for cooling the gas positioned at the downstream side of the feeding means; and means for receiving the product generated by the reaction. A process and products for producing powders of metal compound containing oxygen comprising the steps of: feeding at least one material selected from a liquid material and a solution material obtained by dissolving solid ingredient in organic solvent via a liquid flow controller into a vaporizer; vaporizing the materials in the vaporizer; adding oxygen; heating; cooling; and crystallizing.

Abstract: A vapor deposition source including a crucible configured to hold a quantity of molten constituent material and at least one nozzle to pass vapor evaporated from the molten constituent material out of the crucible.

Abstract: In one embodiment, an apparatus for generating a gaseous chemical precursor used in a vapor deposition processing system is provided which includes a canister comprising a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending from the inlet port into the canister. The apparatus further may contain a plurality of baffles within the interior volume extending between the top and the bottom of the canister, and a precursor slurry contained within the interior volume, wherein the precursor slurry contains a solid precursor material and a thermally conductive material that is unreactive towards the solid precursor material. In one example, the solid precursor material solid precursor material is pentakis(dimethylamino) tantalum.

Abstract: A vapor deposition source including a crucible configured to hold a quantity of molten constituent material and at least one nozzle to pass vapor evaporated from the molten constituent material out of the crucible.

Abstract: A novel nozzle heater design, that facilitates fast thermal response on demand, to achieve rapid reduction in viscosity, allowing fluid to flow through the exit aperture of the nozzle with less pressure, reduced surface tension and elastic behavior at break off. A rapid cool down after a temperature spike alleviates problems associated with prolonged exposure of the fluid at temperature. Prolonged exposure manifests the following problems: volatiles are driven off, premature cross-linking is initiated and fluid in the heated region is subsequently ruined. The fluid path heater is designed to prevent the occurrence of these problems by virtue of the exceptionally fast thermal response rate. This heater design requires no fasteners and is simple to assemble; parts are held in place by inherent geometric relationships and connection to the nozzle hub is tool-less and self-compensating for tolerance variation in the nozzle hub to which it is connected.

Abstract: An apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a canister having at least one baffle disposed between two ports and containing a precursor material. The precursor material is adapted to produce a gas vapor when heated to a defined temperature at a defined pressure. The baffle forces a carrier gas to travel an extended mean path between the inlet and outlet ports. In another embodiment, an apparatus for generating gas includes a canister having a tube that directs a carrier gas flowing into the canister away from a precursor material disposed within the canister.

Abstract: Preferred embodiments of the present invention provides a sublimation system employing guidance structures including certain preferred embodiments having a high surface area support medium onto which a solid source material for vapor reactant is coated. Preferably, a guidance structure is configured to facilitate the repeated saturation of the carrier gas with the solid source for a vapor reactant. Methods of saturating a carrier gas using guidance structures are also provided.

Abstract: A multiple nozzle thermal evaporation source includes a plurality of nozzles having a tapered shape. The nozzles may comprise a thermally conductive material having a low emissivity material.

Abstract: An apparatus and method for effectively and controllably vaporizing a solid precursor material is provided. In particular, the present invention provides an apparatus that includes a housing defining a sealed interior volume having an inlet for receiving a carrier gas, at least one surface within the housing for the application of a solid precursor, and a heating member for heating the solid precursor. The heating member can be located in the housing or in the surface within the housing. The surface can be a rod, baffle, mesh, or grating, and is preferably s-shaped or cone-shaped. Optionally, an outlet connects the housing to a reaction chamber. A method for vaporizing a solid precursor using the apparatus of the present invention is also provided.

Abstract: A vaporizer delivery system including a sublimatable solid precursor material applied to a wire substrate for vaporizing and achieving a continuous uninterrupted delivery of a vaporized precursor to a downstream semiconductor process chamber. The coated wire substrate is drawn past a heat source at a predetermined speed to rapidly heat and vaporize the sublimatable solid precursor.

Abstract: A vaporizer delivery system including a sublimatable solid precursor material applied to a wire substrate for vaporizing and achieving a continuous uninterrupted delivery of a vaporized precursor to a downstream semiconductor process chamber. The coated wire substrate is drawn past a heat source at a predetermined speed to rapidly heat and vaporize the sublimatable solid precursor.

Abstract: An apparatus and method for effectively and controllably vaporizing a solid precursor material is provided. In particular, the present invention provides an apparatus that includes a housing defining a sealed interior volume having an inlet for receiving a carrier gas, at least one surface within the housing for the application of a solid precursor, and a heating member for heating the solid precursor. The heating member can be located in the housing or in the surface within the housing. The surface can be a rod, baffle, mesh, or grating, and is preferably s-shaped or cone-shaped. Optionally, an outlet connects the housing to a reaction chamber. A method for vaporizing a solid precursor using the apparatus of the present invention is also provided.

Abstract: In order to provide a vapor deposition method for forming an organic thin film, which is advantageous in that a deposition rate can be easily controlled and deposition can be conducted with stable high controllability, there is prepared a crucible which is provided with an opening portion at an upper portion of the body, and a projection in a cone shape on an inner bottom surface of the crucible so as to be opposite to the opening portion. When the crucible is irradiated with an infrared light from the bottom side of the crucible, the light in one region among the infrared light transmits the bottom of the crucible and is then radiated to an organic material contained in the crucible. Therefore, the organic material is heated and vaporized at a desired temperature in the range of about 100 to 400° C. by controlling the irradiation dose of the infrared light.

Abstract: A multiple nozzle thermal evaporation source includes a plurality of nozzles having a tapered shape. The nozzles may be coated with a thermally conductive material with a low emissivity material.

Abstract: An apparatus and method for effectively and controllably vaporizing a solid precursor material is provided. In particular, the present invention provides an apparatus that includes a housing defining a sealed interior volume having an inlet for receiving a carrier gas, at least one surface within the housing for the application of a solid precursor, and a heating member for heating the solid precursor. The heating member can be located in the housing or in the surface within the housing. The surface can be a rod, baffle, mesh, or grating, and is preferably s-shaped or cone-shaped. Optionally, an outlet connects the housing to a reaction chamber. A method for vaporizing a solid precursor using the apparatus of the present invention is also provided.

Abstract: There are disclosed a vaporizer wherein at least a portion of a CVD material feed portion in contact with a CVD material is constituted of a corrosion resistant synthetic resin; and an apparatus for vaporizing and supplying which comprises a cooler and the vaporizer wherein the inside of the CVD material feed portion of the vaporizer and the surface on the side of the vaporization chamber of the CVD material feed portion are constituted of a corrosion resistant synthetic resin; the feed portion in contact with the outside of the vaporizer is constituted of a metal; and the CVD material feed portion which is constituted of a metal and which undergoes heat transfer from the heating means upon heating the vaporization chamber can be cooled with a cooler.

Abstract: A CVD apparatus for fabricating a titanium nitride thin film is provided. The apparatus comprises an evacuatable reaction vessel having an interior, a pumping apparatus capable of exhausting the reaction vessel and maintaining the interior of the reaction vessel at a prescribed pressure, a gas feeder for introducing a mixed gas into the reaction vessel, a substrate holder in the reaction vessel for holding a substrate to be coated with a titanium nitride thin film, and a heater for heating the substrate. The gas feeder is equipped with the following components: (a) a vaporizer for vaporizing tetrakis(dialkylamino)titanium (TDAAT) from a liquid source material, (b) a first flow controller capable of setting a flow rate of the vaporized TDAAT to any level within a range of 0.

Abstract: A ceramic material is provided containing 45 to 55% by weight TiB2 and 40.5 to 54.7% by weight BN and 0.1-1.5% by weight Ca in the form of a compound selected from the group consisting of the calcium oxides and calcium borates and mixtures thereof, which material contains from 0.2 to 3% by weight of a compound selected from the group consisting of the oxides, carbides and nitrides of the elements Al, Si, Zr, Ti and mixtures thereof.

Abstract: A dual chambered bubbler vessel for use with solid organometallic source material for chemical vapor phase deposition systems, and a method for transporting a carrier gas saturated with source material for delivery into such systems. The bubbler vessel is designed so that carrier gas enters through an inlet in the top thereof into an inlet chamber and after it has been saturated with the organometallic vapors exits through a first porous frit located in the floor of the inlet chamber into an outlet chamber and is withdrawn from the bubbler after passing through a second porous frit element located at the outlet of the bubbler.

Abstract: A bubbler for use in vaporizing a precursor (source) for thin film deposition includes a vaporizer chamber, the vaporizer chamber having defined therein a source inlet hole, an exhaust hole and a carrier gas inlet hole; a source supply unit connected to the source inlet hole; a plate installed in the vaporizer chamber, the plate being adapted to receive a source entering into the vaporizer chamber; and a heater source installed in the vaporizer chamber, the heater source being adapted to evenly heat the plate.

Abstract: A conductive heating element is disclosed for use with an evaporation-type thin film deposition device. The conductive heater selectively heats the sample to be coated without substantially affecting the temperature of the deposition chamber. As a result, lower deposition chamber pressures and higher sample temperatures are attainable.

Abstract: There are disclosed a vaporizer wherein at least a portion of a CVD material feed portion in contact with a CVD material is constituted of a corrosion resistant synthetic resin; and an apparatus for vaporizing and supplying which comprises a cooler and the vaporizer wherein the inside of the CVD material feed portion of the vaporizer and the surface on the side of the vaporization chamber of the CVD material feed portion are constituted of a corrosion resistant synthetic resin; the feed portion in contact with the outside of the vaporizer is constituted of a metal; and the CVD material feed portion which is constituted of a metal and which undergoes heat transfer from the heating means upon heating the vaporization chamber can be cooled with a cooler.

Abstract: A ceramic material is provided containing 45 to 55% by weight TiB2 and 40.5 to 54.7% by weight BN and 0.1-1.5% by weight Ca in the form of a compound selected from the group consisting of the calcium oxides and calcium borates and mixtures thereof, which material contains from 0.2 to 3% by weight of a compound selected from the group consisting of the oxides, carbides and nitrides of the elements Al, Si, Zr, Ti and mixtures thereof.

Abstract: An apparatus for simultaneously depositing gradients components of two or more target materials onto a substrate is disclosed. The apparatus comprises a first target material source that directs a first target material towards the substrate and a second target material source that directs a second material towards the substrate. The apparatus further comprises a gradient shutter system that blocks a first predetermined amount of the first target material and a second predetermined amount of the second target material directed towards the substrate in order to generate gradients of the first and second target materials on the substrate. The gradients of the first and second target materials being simultaneously deposited onto the substrate to form a homogenous resulting material. A method for simultaneously depositing gradients of two or more target material onto a substrate is also disclosed.

Abstract: A metallizing device for vacuum metallizing arrangements is disclosed having a vaporizer (3) heated by an electrical heating rod (8). This vaporizer (3) is connected to a nozzle element (1) in the form of a hollow body. For the purpose of vaporizing a substrate, vapor flows out of the vaporizer (3) into the nozzle element (1) and from there out of a nozzle gap (2) toward the substrate.

Abstract: An inactive gas is introduced into an organic material evaporation source to place a thin organic film material in the organic material evaporation source in an atmosphere having a relatively high pressure, and the temperature of the thin organic film material is increased up to a certain temperature. Then, the organic material evaporation source is evacuated to lower the pressure around the thin organic film material for thereby causing the thin organic film material to emit a vapor. Since no wasteful vapor is emitted from the thin organic film material, the thin organic film material is effectively utilized. Because the inactive gas acts as a heating medium, the temperature of the thin organic film material is increased at a high rate, and the thin organic film material is uniformly heated. When the temperature of the thin organic film material is lowered in an inactive gas atmosphere, it can be lowered at a high rate.

Abstract: An apparatus accurately measures a temperature of a substrate in a thermal processing chamber. The apparatus has a support structure to support the substrate within the thermal processing chamber. A first probe is provided with an input end positioned to receive radiation from the substrate during thermal processing. A second probe is also provided with an input end positioned to receive radiation from the substrate during thermal processing. The second probe is positioned such that it is angularly offset from the first probe so radiation provided at an output end of the second probe is out of phase with radiation provided at the output end of the first probe. A junction receives and combines radiation from the output ends of the first and second probes. The radiation is combined to provide an accurate representation of the temperature of a local region of the substrate by compensating for a temperature gradient between the support structure and the substrate.

Abstract: A vapor delivery system for delivering a vapor-phase reactant to a chemical process reactor at a substantially constant flow rate. The vapor delivery system includes a source of a reactant material, means for converting the reactant material to a vapor and for maintaining a predetermined volume of vapor in a vapor phase, a flow controller for providing a controlled flow of the vapor-phase reactant to the process reactor, means for detecting a parameter related to the availability of the vapor-phase reactant material to the process reactor from the flow controller, and means responsive to the detection signal for controlling the supply of reactant material to the vapor converter. In one embodiment the parameter is the pressure of the vapor within the predetermined volume. In another embodiment the parameter is the fluid conductance of a control valve within the flow controller. The vapor delivery system of the present invention can operate in either a substantially continuous or a noncontinuous delivery mode.

Abstract: A deformable, inexpensive crucible for use with a dynamic thermo-mechanical physical test or simulating system, specifically for holding a self-resistively heated specimen (250) at liquid temperatures and particularly, though not exclusively, one suited for use in simulating thin-strip continuous casting processes. The crucible is formed of a thermally and electrically insulating material (222) which surrounds, e.g., the bottom and two opposing and sides of the specimen perpendicular to the direction of the force used for compression and which, in turn, is held within a thin, readily deformable, e.g., U-shaped shell (210) with an upwardly facing open portion. The shell is appropriately sized with a length and height less than that of insulating material such that, when properly positioned over the material, the shell will not contact the specimen and hence remain insulated from the heating current flowing therethrough and thus will not exhibit any self-resistive heating.

Abstract: A liquid deposition source delivery system (22) includes a reactant source (50) of a liquid chemical reactant, a first heater (54) positioned adjacent to the reactant source (50) , and a vapor collection system (56) in communication with the reactant source (50) to collect vapor evolved from the reactant source (50). A flow controller (64) has an upstream side (66) in communication with the vapor collection system (56). A line (70) of a vapor distribution system is in communication with the downstream side (68) of the flow controller (64). A second heater (76) is positioned adjacent to the flow controller (64), at least a portion of the vapor collection system (56), and at least a portion of the vapor distribution system, to prevent the vapor from condensing in the lines (70) of the delivery system.

Abstract: A coating material to be evaporated in an evaporator cell disposed in a vacuum chamber is fed in the form of a wire to the evaporator cell in accordance with the depth of the molten bath, by a wire transport including a motor-driven shaft or roller and a counter-roller mounted on a movably journaled lever which in turn is movable via an electromagnetic actuator against the force of a spring means. A wire feed tube is arranged between the wire transport which draws fusible wire from a remote supply and feeds it to the evaporator boat where the wire is evaporated for coating a band-type substrate. The feed tube has a straight section which receives the wire concentrically from the transport and a gooseneck section toward said evaporator boat which twice deflects the wire to provide three points of contact with the inner wall of the tube, thus accurately positioning the wire while preventing clogging of the outlet orifice.

Abstract: A vacuum chamber contains means for transferring a substrate for an information disc such as a CD from a loading station to a coating station, where material such as aluminum in wire form is evaporated in order to coat the substrate from above. An evaporation nozzle is continuously supplied with wire at a rate according to the coating thickness. The nozzle may be heated either resistively in order to evaporate the wire therein, or the wire may be directly heated by an induction coil.

Abstract: An effusion source, for the generation of molecular beams, adapted to be positioned at an angle to the horizontal, within a vacuum chamber, of an MBE system including heating structures around the source to create uniform temperatures across the source in planes substantially parallel to the horizontal to cause uniform temperatures in planes substantially parallel to the horizontal in materials placed within the source and intended for MBE applications. A number of heating embodiments are described.

Abstract: A method of resistance heating using a graphite container having a graphite body and a pyrolytic boron nitride coating in which a metal charge of predetermined weight is deposited over the coating and the container is heated by the application of a variable source of electrical power to cause the metal charge to fully evaporate in a short interval of time of less than two minutes with the heat cycle controlled to provide a cool down period in each cycle of applied power and with a new metal charge introduced upon completion of each heat cycle in a semi-continuous fashion.

Abstract: A device for heating a material to an evaporation temperature so that the material can be coated on a substrate is provided which includes a series evaporator for containing the material to be coated. There is also provided a plurality of radiant heaters disposed above the evaporator and the material to be evaporated, the heaters each being essentially flat and disposed parallel and adjacent to the upper surface of the material. Heat shields are also disposed above the radiant heaters and below a substrate to be coated and have an area sufficient to prevent direct radiant heat contact with the substrate to be coated. A plurality of vapor outlet openings are formed between each adjacent heat shield of the series evaporator and face the substrate to be coated. The outlets are in vapor communication with the material being evaporated. Each of the radiant heaters are located beneath an upper heat shield and within the area protected by the heat shields.