Abstract: There is provided an electric suspended radiant disk heater apparatus comprising: a central and vertical ceiling mount pole for hanging from a ceiling at an upper end thereof in use; a radiant heater disk element fastened at a lower end thereof, the radiant heater disk element being substantially co-axial with the ceiling mount pole, being substantially perpendicular to the ceiling mount pole and extending radially from the lower end of the pole; and an electric heater element thermally coupled to the radiant heater disk element to heat the radiant heater disk to radiate heat from a radiant heat emitting undersurface thereof.

Abstract: An infant warming system includes a body temperature probe, a peripheral temperature probe, and at least two identical input jacks, each input jack configured to receive either one of the first connector or the second connector. The body temperature probe has a body temperature sensor removably fixable to an infant's torso to measure a body temperature of the infant, and a first connector configured to connect to an input jack to transmit the body temperature measurement. The peripheral temperature probe includes a peripheral temperature sensor removably fixable to the infant's extremity to measure a peripheral temperature of the infant, and a second connector configured to connect to an input jack to transmit the peripheral temperature measurement. The system further includes a probe detection module to automatically detect whether each input jack is connected to the peripheral temperature probe or the body temperature probe.

Abstract: A semiconductor processing tool is disclosed, the tool having a frame forming at least one chamber with an opening and having a sealing surface around a periphery of the opening, a door configured to interact with the sealing surface for sealing the opening, the door having sides perpendicular to the door sealing surface and perpendicular to a transfer plane of a substrate, and at least one drive located on the frame to a side of at least one of the sides that are substantially perpendicular to the door sealing surface and substantially perpendicular to the transfer plane of the substrate, the drive having actuators located at least partially in front of the sealing surface and the actuators being coupled to one of the sides of the door for moving the door from a sealed position. The at least one drive is located outside of a substrate transfer zone.

Abstract: A distributed, self-organizing environment conditioning system with adaptive and learning behaviors that provide localized and targeted climate conditioning such as, but not limited to, temperature and humidity control in indoor and outdoor settings and more particularly, to extensible networked multi-modal autonomous systems of heating units working together to efficiently target objects for selective environmental control.

Abstract: A honeycomb heater includes a lamp housing having an outer edge that forms a partial circle. The lamp housing has an opening extending from a top surface to a bottom surface of the lamp housing. The opening further extends from the outer edge into a center region of the lamp housing. A plurality of lamps is distributed throughout the lamp housing, and is configured to emit light out of the top surface of the lamp housing.

Abstract: Method and apparatus for curing a composite laminate. The apparatus comprising an electromagnetic radiation source creating electromagnetic microwave energy in an enclosed volume and a heating source for providing a convective airflow in the enclosed volume. A composite laminate assembly comprising a composite laminate is placed in the enclosed volume, wherein the composite laminate of the composite laminate assembly is cured by both the electromagnetic microwave energy created by the electromagnetic radiation source, and the convective airflow provided by the heating source. A vacuum bag may be placed over the composite laminate assembly. A source may be activated such that a vacuum within the vacuum bag is created according to design specifications.

Abstract: Embodiments of heating lamps and heating lamp arrays are disclosed herein. In some embodiments, a heating lamp may include a heating lamp envelope having a filament disposed within the heating lamp envelope; a base coupled to the heating lamp envelope to support the heating lamp envelope; and one or more recesses formed in the base to provide an improved grip for a user. In some embodiments, a heating lamp array for use in a semiconductor process chamber may include a plurality of heating lamps, each heating lamp comprising a heating lamp envelope having a filament disposed within the envelope and a base coupled to the heating lamp envelope to support the envelope, the base having one or more recesses formed in the base to provide an improved grip for a user, wherein a distance between adjacent heating lamp bases is about 0.02 inches to about 0.08 inches.

Abstract: Embodiments described herein generally relate to an improved power distribution assembly for a lamphead assembly used in a thermal processing chamber. In one embodiment, the lamphead assembly includes a plurality of lamps for thermal processing of semiconductor substrates, and a power distribution assembly having a plurality of openings, the power distribution assembly provides power to the plurality of lamps, and each opening is sized to allow passage of the lamp therethough.

Abstract: Embodiments of the present invention generally relate to methods and apparatus for monitoring substrate temperature uniformity in a processing chamber, such as an RTP chamber. Substrate temperature is monitored using an infrared camera coupled to a probe having a wide-angle lens. The wide-angle lens is positioned within the probe and secured using a spring, and is capable of withstanding high temperature processing. The wide angle lens facilities viewing of substantially the entire surface of the substrate in a single image. The image of the substrate can be compared to a reference image to facilitate lamp adjustments, if necessary, to effect uniform heating of the substrate.

Abstract: A surface of a semiconductor wafer with a gate of a high dielectric constant film formed thereon is heated to a target temperature for a short time by irradiating the surface with a flash of light. This promotes the crystallization of the high dielectric constant film while suppressing the growth of an underlying silicon dioxide film. Subsequently, the temperature of the semiconductor wafer subjected to the flash heating is maintained at an annealing temperature by irradiating the semiconductor wafer with light from halogen lamps. An annealing process after the flash heating is performed in an atmosphere of a gas mixture of hydrogen gas and nitrogen gas. The annealing process is performed on the semiconductor wafer in the atmosphere of the hydrogen-nitrogen gas mixture, so that defects present near the interfaces of the high dielectric constant film are eliminated by hydrogen termination.

Abstract: A method for cooling IR emitters in a heating device for warming preforms before processing them in a stretch blow or blow molding device. IR emitters are arranged on at least one sidewall of the heating device parallel to the transport direction of the preforms, with at least one back reflector arranged on the side of the IR emitters facing away from the performs. The preforms to be warmed include a mouth region and a longitudinal axis and the mouth region is cooled with a first coolant flow. An almost vertical second coolant flow passes between the IR emitters and the at least one back reflector, this second coolant flow being at least partially fed by the almost horizontal first coolant flow and/or is united with the almost horizontal first coolant flow. A heating device and cooling device are also provided.

Abstract: A semiconductor wafer having a surface with a thin film formed thereon is transported into a chamber and held by a holder. After an atmosphere provided in the chamber is replaced, flashes of light are directed from flash lamps in a light irradiation part toward the semiconductor wafer to perform a baking process on the thin film. The irradiation of the semiconductor wafer with light from halogen lamps in the light irradiation part also starts at the same time as the irradiation thereof with the flashes of light. The flashes of light emitted for an extremely short period of time and having a high intensity allow the surface temperature of the thin film to rise momentarily. This prevents the occurrence of abnormal grain growth resulting from prolonged baking in the film.

Abstract: An infrared furnace system provides for adjusting the amount of time a workpiece spends in a respective section of the furnace while at the same time minimizing the footprint, i.e., the amount of floor space that the furnace uses. Various embodiments allow for optimizing the required thermal duration of each section which then also optimizes the heating and/or cooling profile within each section. Transfer conveyors are provided to transfer a workpiece from one conveyor operating at a first speed to a second conveyor operating at a second speed, different from the first speed in order to prevent damage to the workpiece. Rollers are provided to support the workpiece and to maintain a proper orientation. A heating lamp support assembly provides power to the lamp and facilitates exchange and replacement of the lamp. An air delivery system provides process gas maintained at the correct temperature. An exhaust system provides air flow with improved turnover and reduced noise considerations.

Abstract: An apparatus for treating a disc-shaped article comprises a spin chuck and at least three individually controllable infrared heating elements. The infrared heating elements are mounted in a stationary manner with respect to rotation of said spin chuck. The infrared heating elements are arranged in a nested configuration so as to define individually controllable inner, middle and outer heating zones adjacent a disc-shaped article when positioned on the spin chuck.

Abstract: The present invention relates to a heater block for a rapid thermal processing apparatus, and more particularly, to a heater block in which heating lamps are densely arranged in a tessellation. The tessellation has a structure such that the plurality of heating lamps are arranged at right angles to form a zigzag line, and the thus-formed zigzagged line is repeated such that the zigzagged line is combined with the adjacent zigzagged line. According to the present invention, a temperature gradient caused by a void between heating lamps is prevented, and heating lamps are densely arranged to increase heat density for a heat radiation area as opposed to conventional heater blocks, thus achieving improved heat treatment efficiency using less energy.

Abstract: Methods and apparatus for determining the root-mean-square (RMS) voltage of an input voltage are provided herein. In some embodiments, an apparatus for determining the root-mean-square (RMS) voltage of an input voltage includes an amplifier to modify an amplitude of the input voltage signal; an amplitude detector, coupled to the amplifier, to transform the spectrum of the modified input voltage signal so that an increased portion of the signal is disposed within a desired frequency region; and a root-mean-square (RMS) converter, coupled to the amplitude detector, to determine the RMS voltage of the transformed input voltage signal, wherein a bandwidth of the RMS converter includes the desired frequency region.

Abstract: A lamp heater and a drying apparatus including the same, the lamp heater including a plurality of three-phase power source lamps, a dummy load, the dummy load being configured to maintain a phase balance of the three-phase power source lamps, and a controller, the controller controlling the three-phase power source lamps and the dummy load depending on a lighting condition of the three-phase power source lamps.

Abstract: Certain example embodiments relate to systems and/or methods for preferentially and selectively heat treating conductive coatings such as ITO using specifically tuned near infrared-short wave infrared (NIR-SWIR) radiation. In certain example embodiments, the coating is preferentially heated, thereby improving its properties while at the underlying substrate is kept at low temperatures. Such techniques are advantageous for applications on glass and/or other substrates, e.g., where elevated substrate temperatures can lead to stress changes that adversely effect downstream processing (such as, for example, cutting, grinding, etc.) and may sometimes even result in substrate breakage or deformation. Selective heating of the coating may in certain example embodiments be obtained by using IR emitters with peak outputs over spectral wavelengths where the conductive coating (or the conductive layer(s) in the conductive coating) is significantly absorbing but where the substrate has reduced or minimal absorption.

Abstract: A system and method for monitoring and operating one or more light emitting devices is disclosed. In one example, light intensity within a dual elliptical reflecting chamber is sensed and operation of a fiber curing system is adjusted in response to an amount of sensed light energy.

Abstract: A system and method for monitoring a fiber curing system is disclosed. In one example, transmittance of a curing tube is determined so that curing of a coating applied to a fiber may be more uniform.

Abstract: A method of thermally treating a wafer includes loading a wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient. A defect is detected in the wafer. The wafer is aligned to position the defect within one of the one or more regions of uniform temperature gradient. A rapid thermal process is performed on the wafer in the process chamber while the defect is positioned within one of the one or more regions of uniform temperature gradient.

Abstract: Systems and methods are provided for controlling infrared radiation (IR) sources of a sauna including tuning IR wavelength-ranges and radiated power-levels of IR sources, and directing IR to locations on a user's body. In one illustrative embodiment, a sauna may be provided having adjustable heat sources to emit IR at any wavelength resulting in a desirable radiation treatment for the sauna user. In another illustrative embodiment, a method is provided for tuning IR sources in a sauna.

Abstract: A heating device for tempering preforms before processing in a stretch blow device. The heating device includes a heating alley with a plurality of infra red emitters, arranged parallel to the longitudinal axis of the tempered preforms. At least one back reflector and/or one filter is assigned to the infra red emitters, whereby the at least one back reflector and/or the at least one filter is segmented.

Abstract: Embodiments of heating lamps and heating lamp assemblies are disclosed herein. In some embodiments, a heating lamp may include a bulb; a reflector circumscribing the bulb proximate a first end of the bulb; a base coupled to the reflector on a side opposite the bulb; a handle coupled to the base on a side opposite the reflector, wherein the handle comprises a body having a first end coupled to the base and an opposing second end; a first conductor extending from the bulb and through the base and the handle in a direction opposite the bulb; and a second conductor extending from the bulb and through the base and the handle in a direction opposite the bulb.

Abstract: Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.

Abstract: The embodiments described herein generally relate to a flexible standoff for use with a lamphead assembly in a thermal processing chamber. In one embodiment, the lamphead assembly can include a lamphead with one or more fixed lamphead positions, a lamp bulb, a lamp base with a standoff contact adaptor and a flexible standoff capable of attaching and positioning the lamp assembly. The flexible standoff can include a socket configured to receive a lamp base of a lamp assembly, a housing configured to position a lamp bulb of a lamp assembly in thermal connection with a processing chamber, a contact adaptor configured to electrically connect to a power supply and a conductive material to electrically connect the socket and the contact adaptor.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract: Apparatus for providing pulsed or continuous energy in a process chamber, and methods of fabricated said apparatus, are provided herein. The apparatus may include a substrate having a plurality of electrical terminals disposed on one or more surfaces of the substrate, a plurality of solid state sources grown on top of the plurality of electrical terminals, the plurality of solid state sources providing pulsed or continuous energy when electrically powered, and one or more cooling channels formed in one or more areas of the substrate.

Abstract: A method and apparatus for rapid thermal heat treatment of semiconductor and other substrates is provided. A number of heat lamps arranged in an array or other configuration produce light and heat radiation. The light and heat radiation is directed through a heat slot that forms a radiation beam of high intensity light and heat. The radiation beam is directed to a platen that includes multiple substrates. The apparatus and method include a controller that controls rotational and translational motion of the platen relative to the heat slot and also controls the power individually and collectively supplied to the heat lamps. A program is executed which maneuvers the platen such that all portions of all substrates receive the desired thermal treatment, i.e. attain a desired temperature for a desired time period.

Abstract: A flash heating part in a heat treatment apparatus includes 30 built-in flash lamps, and irradiates a semiconductor wafer held by a holder in a chamber with a flash of light. Thirty switching elements are provided in a one-to-one correspondence with the 30 flash lamps. Each of the switching elements defines the waveform of current flowing through a corresponding one of the flash lamps by intermittently supplying electrical charge thereto. Radiation thermometers measure an in-plane temperature distribution of the semiconductor wafer during flash irradiation. Based on the results of measurement with the radiation thermometers, a controller individually controls the operations of the 30 switching elements to individually define the light emission patterns of the 30 flash lamps.

Abstract: A semiconductor wafer in which a carbon thin film is formed on a surface of a silicon substrate implanted with impurities is irradiated with flash light emitted from flash lamps. Absorbing the flash light causes the temperature of the carbon thin film to increase. The surface temperature of the silicon substrate implanted with impurities is therefore increased to be higher than that in a case where no thin film is formed, and the sheet resistance value can be thereby decreased. When the semiconductor wafer with the carbon thin film formed thereon is irradiated with flash light in high concentration oxygen atmosphere, since the carbon of the thin film is oxidized to be vaporized, removal of the thin film is performed concurrently with flash heating.

Abstract: A direct contact segmented column heater is described. The heater is capable of a broad heating and cooling range, and exhibits a very rapid response, with heating and cooling rates better than 350° C. min?1. In one configuration one or more of the individual heating devices are provided with full independent control and temperature feedback, and developed to provide excellent thermal stability at all temperatures. The heating devices or in other words active thermal transfer devices are capable of bi-directional operation, selectively heating (i.e., providing heat to) or cooling (i.e., withdrawing heat from) a column and/or contents of a column.

Abstract: The present invention discloses an apparatus for baking a substrate. The apparatus includes a supporting platform, a plurality of supporting pins, a heating unit, and a thermal insulation layer. The supporting platform has a supporting surface and a bottom surface. The supporting pins are disposed in the supporting platform, and the supporting pins are capable of movably protruding from the supporting surface to lift the substrate up. The heating unit is utilized to heat the substrate. The thermal insulation layer is disposed opposite to the bottom surface of the supporting platform and utilized to prevent the heating unit from heating the supporting platform. The present invention further discloses a method for baking a substrate, and the method can effectively prevent a Mura defect appearing on the substrate.

Abstract: Provided is a bidirectional heating cooker that supplements and improves a function of a conventional infrared radiation cooker, in which the bidirectional heating cooker further includes a lower heating unit that is placed at the lower end of a cooking pan that is heated by radiant heat irradiated by an infrared lamp and that directly heats the cooking pan, to thereby heat the cooking pan quickly by the lower heating unit to thus make the upper and lower portions of food such as meat put on the cooking pan more quickly roasted than the conventional infrared radiation cooker and reduce a burden of electric charges based on a shortened heating time of the cooking pan, and to thereby make it possible to cook food rapidly by an upper heating unit with the infrared lamp and the lower heating unit that is placed on the cooking pan.

Abstract: Embodiments of the invention generally contemplate an apparatus and method for monitoring and controlling the temperature of a substrate during processing. One embodiment of the apparatus and method takes advantage of an infrared camera to obtain the temperature profile of multiple regions or the entire surface of the substrate and a system controller to calculate and coordinate in real time an optimized strategy for reducing any possible temperature non-uniformity found on the substrate during processing.

Abstract: This invention introduces the welding technology of an electrical connector and its welding device. The welding device comprises of a base frame, IR lamp that can emit infrared rays, and convex lens used to collect infrared rays. The lamp and lens are set in the base frame, with the convex lens in front, which collects all infrared rays from the lamp and irradiates them to the solder paste, allowing for fast heating. The melted solder paste forms defect-free welding spots with sound electrics performance and low energy consumption, thus saving energy. This invention of welding device is used for the welding when electrical connector is assembled, solder paste is put and the connector is fixed in the conveying belt. The electrical connector goes through the heating zone in welding device, which enables the automatic welding of each cored wire in the electrical connector and wire connecting terminal. The welding is fast and the production can be continuous free of any tack welding.

Abstract: A uniform voltage is applied to loads even to other than a multiple of three loads made of heating lamps connected in parallel to each other, without causing any burden on a primary side. The number of loads is divided into a multiple of three and a multiple of two. A three-phase AC voltage is applied to three primary windings, which are connected as a Y-connection or a ?-connection. Secondary windings, which are each magnetically coupled to a primary winding of a plurality of three-phase transformers and have the same number of turns, are connected with the multiple of three loads.

Abstract: A radiant tube assembly (12) has at least one tubular structure (14, 16, 22, or 24), and a heat source (30), with a thermal protective layer (18) is on at least one side, interior or exterior (17 or 15), thereof. An outer tubular structure (16) may be present. A protective layer (18) may be disposed on the outer tubular structure's (16) interior and/or exterior sides (17 and/or 15). A shield (26), having two sides (25 and 27) and a thermal protective layer (18) may be disposed along an exterior or interior side (27 or 25).

Abstract: A fluid heating apparatus includes a housing containing a flattened tube and lamps. The apparatus further includes a first conduit flow-coupled to the flattened tube, the first conduit being adapted to provide fluid to the flattened tube. The apparatus further includes a second conduit flow-coupled to the flattened tube, the second conduit being adapted to channel fluid from the flattened tube. The lamps are arranged to irradiate the flattened tube, and the flattened tube is adapted to absorb radiation from the lamps and heat fluid contained therein.

Abstract: Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.

Abstract: An IR radiant heater has at least one planar carbon heating element (1) arranged in a housing, which is transparent or at least partially transparent to IR radiation. At least one carbon heating element (1) is a carbon fiber-reinforced carbon (CFC) web arranged in a plane and arranged between two plates (2, 3), of which at least one is transparent or partially transparent.

Abstract: A system for heating a patio, the system comprising: a head unit comprising a heating unit configured for heating a patio; an offset assembly, wherein the offset assembly is coupled to the head unit; a mounting pole comprising a plurality of sections, the mounting pole being coupled to the offset assembly; and a base unit the base unit supporting the mounting pole.

Abstract: Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.

Abstract: The present invention relates to a heater block and a substrate treatment apparatus, and more particularly to a heater block to perform heat treatment on a substrate and a substrate treatment apparatus having the same. According to embodiments of the present invention, it is provided a heater block for a substrate treatment apparatus having heating lamps on its one side to transfer heat to a target subjected to heat treatment, the heating lamps having different arrangement patterns in a plurality of regions on said one side.

Abstract: A UV lamp assembly having rotary shutters. Each rotary shutter has a concave wall with a reflective concave surface. The rotary shutters can be collectively rotated between an open position and an closed position. At the open position, the rotary shutters do not block UV light of UV lamps from leaving the UV lamp assembly while at the closed position the rotary shutters block UV light from leaving the UV lamp assembly.

Abstract: The present invention relates to an apparatus for heat-treating a substrate, and more particularly to an apparatus for substrate treatment to perform a heat treatment of a substrate for a flat panel display panel. An apparatus for substrate treatment according to an embodiment of the present invention comprises a processing chamber having a substrate treatment space; a heating housing having a heating lamp that emits radiant energy and a reflecting block that reflects radiant energy emitted from the heating lamp; and a window that maintains a sealing between the processing chamber and the heating housing and transmits the radiant energy to a substrate.

Abstract: Methods and apparatus for heating a substrate in a process chamber are provided herein. In some embodiments, an apparatus for heating a substrate in a process chamber includes a lamp group comprising one or more sets of lamps to provide radiant energy to heat a substrate when disposed in the process chamber, wherein each set of lamps comprises a plurality of lamps wired in series, and wherein each set of lamps is wired in parallel with respect to other sets of the one or more sets of lamps; an alternating current (AC) power source to produce an AC input waveform; and a lamp driver to power the lamp group, the lamp driver including a rectifier coupled to the AC power source to convert the AC input waveform to DC voltage; and a direct current to direct current (DC/DC) converter to reduce voltage of the DC power.

Abstract: A heater block according to the present invention comprises a light-emitting lamp; a concave reflecting member that is placed opposite the lamp and has a concave reflecting surface at one surface faced with the lamp; a lens module that is inserted into the concave reflecting member and has at least one lens; and a flat reflecting member that is placed opposite the lens module. According to embodiments of the present invention, light emitted from the lamp is reflected by the concave reflecting member. Then, light and heat are collected from the reflected light by the flat reflecting member and the lens module and are irradiated on a substrate. That is, light having energy greater than a conventional manner is irradiated on the substrate to enhance the instant heating temperature and temperature increasing rate of substrate and to increase a heat-focusing area. Therefore, it has an advantage that the productivity of semiconductor or display device manufacture that requires a rapid thermal process is improved.

Abstract: High reflectance element IR lamp module and method of firing multi-zone IR furnaces for solar cell processing comprising lamps disposed backed by a flat or configured plate of ultra-high reflectance ceramic material. Optionally, the high reflectance plate can be configured with ripples or grooves to isolate each lamp from adjacent lamps in the process zone. Furnace cooling air is exhausted and recycled upstream for energy conservation. Lamp spacing can be varied and power to each lamp individually controlled to provide infinite control of temperature profile in each heating zone. The high reflectance element may be constructed of dense ceramic fiber board, and then coated with high reflectance ceramic composition, and baked or fired to form the finished element.

Abstract: A rapid thermal process chamber having a lamp driver circuit that includes two transistors and two diodes is described. The rapid thermal process chamber includes a plurality of halogen lamps, the lamp driver, a temperature sensor that measures wafer temperature, a temperature controller connected to the temperature sensor and to the lamp driver, the temperature controller providing control signals to the lamp driver that are functions of the wafer temperature and a desired temperature. The lamp driver includes two transistors that are controlled by the control signals so that the power factor of the power supplied to the plurality of halogen lamps is in the range of 0.9 to 1.