Abstract: A method of transferring one or more substrates between process modules or load lock stations while minimizing heat loss is provided. In some embodiments the method comprising the steps of: identifying a destination location D1 for a substrate S1 present at an initial processing location P1; if the destination location D1 is occupied with a substrate S2, maintaining the substrate S1 at the initial processing location P1; and if the destination location D1 is available, transferring the substrate S1 to the destination location D1. In accordance with additional embodiments, the method is carried out on a system for processing substrates which includes two or more process modules, a substrate handling robot, a load lock chamber, and a transverse substrate handler. The transverse substrate handler includes mobile transverse chambers configured to convey substrates to process modules, wherein each mobile transverse chamber is configured to maintain a specified gas condition during the conveyance of the substrates.

Abstract: The invention relates to a device for loading and unloading a heat treatment furnace and to a corresponding method. Heat treatment furnaces are normally loaded and unloaded by means of a so-called elevator. During unloading, a removed workpiece is usually lowered by means of the elevator into an oil bath, in which it is then removed from the elevator. Oil is then transferred into the furnace chamber via the oil-covered elevator. Such an application of oil is avoided by means of a device comprising a frame rack having a first and a second level, which are disposed parallel above each other, and are connected to each other by means of a plurality of frame braces, wherein the first and the second levels have a plurality of openings and the frame braces have guide means.

Abstract: Embodiments of the invention provide a thermal processing system and methods for uniformly heating and/or cooling a semiconductor wafer. Embodiments of the invention may be applied to provide a more uniform temperature profile when processing 300 mm and larger wafers having different curvature profiles that occur at the same and/or different points in a manufacturing cycle. Wafer curvature can be dependent on the number and thickness of the metal layers.

Abstract: Apparatus for drying drill cuttings (“cuttings”) at multiple drilling locations. A commercially available cuttings drying unit is mounted on a means for transporting the cuttings drying unit between drilling sites, such as a truck. A means for conveying cuttings to an inlet of the cuttings drying unit, such as an auger, moves wet cuttings from a collection container to the drying unit. The cuttings are then dried. A means for conveying dried cuttings from a discharge of the cuttings drying unit to another cuttings container, such as a discharge auger, is provided. Preferably the discharge auger is mounted on the truck so as to be rotatable between a first position, wherein the truck can legally move down a roadway (preferably, contained within the width of the truck), and a second position usually to one side of the truck, where the dried cuttings can be discharged into a container.

Abstract: A panels-off painting process and system adapted for use with a plurality of workpieces includes a carrier having a main platform, stationary support structures, and at least one rotatable assembly interconnected to the platform, configured so as to be caused to shift at least a portion of the workpieces between first and second orientations, and including a counterbalance that reduces the force necessary to cause the shift, and preferably further includes a retrofitted robotic arm programmably configured to apply a coat to the workpieces and subsequently engage the assembly so as to cause the shift.

Abstract: A device for distributing loose materials, arranged in a curtain of loose material tipped out from a means of conveying loose material includes a box with a top opening, at least one wall which extends transverse to the curtain of material inside the box to subdivide the box into at least two compartments, and at least two tipping-out means, one of the tipping-out means being associated with each of the compartments of the box, the tipping-out means being directed in such a way as to deflect the material received in the respective compartments into a distinct region of the hopper. The method for loading a hopper includes tipping loose material out in the form of a curtain of material over the hopper and splitting the curtain into at least two partial streams so as to deflect each of the partial streams towards a distinct region of the hopper.

Abstract: An apparatus and method for loading particulate material in a vertical tube comprising at least one impact-absorbing module, a central axis and a sustaining wire to position the apparatus suspended in the interior of the tube in such a way as to allow loading and uniform distribution of all the material loaded in the tube and the method of loading that uses the apparatus is also described.

Abstract: A method of charging a vertical tube having an internal diameter of 50 mm or less with catalyst particles, which comprises introducing a filling aid into the vertical tube, where the filling aid comprises a flexible elongated body and the ratio of the cross section of the flexible elongated body to the cross section of the tube is from 0.003 to 0.08, and introducing the catalyst particles into the tube.

Abstract: A method and an apparatus for manufacturing a semiconductor wafer are provided for improving a quality of the semiconductor wafer, and further, for improving a quality of a semiconductor device manufactured by using the semiconductor wafer, by preventing warping from being generated at a stage of a placing step, at the time of performing heat treatment to a semiconductor wafer substrate. The placing process is performed by a placing means so that a time when a temperature difference between a wafer front surface temperature and a wafer rear surface temperature becomes maximum, and a time when warping is generated in the wafer are prior to a time when the wafer is brought into contact with lift pins or a susceptor (i.e., a time after the temperature is at an upper limit value of an infrared temperature region at 600° C.), and the lift pins are brought into contact with the wafer rear surface.

Abstract: The invention concerns a method for individually separating wafers from a stack of wafers by placing the stack of wafers in a microwave chamber, and exposing the wafers for microwaves causing the water between the wafers to evaporate.

Abstract: A food warming apparatus has a heating compartment for maintaining previously cooked food portions in a ready-to-use condition. The food portions are contained in a tray that is placed in a tray handler. The tray handler may include a frame for receiving the tray, a handle, and rollers. A tray handler guide in the heating compartment has a guide surface on which the rollers are able to roll and stops for engaging the rollers at a maintenance position and an access position. In the maintenance position, the tray is positioned inside the heating compartment so that the food portions are maintained in a ready-to-use condition. In the access position, a user is able to access food portions in the tray. At the maintenance and access positions, the user may sense the engagement of the rollers by sensing that the tray handler's motion is impeded but not prevented.

Abstract: In order to provide a particularly homogeneous pressure and temperature profile in a gas cushion for the levitating support of glass or glass ceramic, the invention provides a device (19) for transporting or supporting glass ceramic or glass, which comprises at least one diaphragm (1, 2) that has at least one continuous bearing surface (3) and at least one gas feed chamber (51-55) and at least one gas discharge chamber (71-75), the gas feed chamber (51-55) and the gas discharge chamber (71-75) having a gas-permeable connection to the bearing surface (3).

Abstract: A new apparatus for processing substrates is disclosed. A multi-level load lock chamber having four environmentally isolated chambers interfaces with a transfer chamber that has a robotic assembly. The robotic assembly has two arms that each can move horizontally as the robotic assembly rotates about its axis. The arms can reach into the isolated chambers of the load lock to receive substrates from the bottom isolated chambers, transport the substrates to process chambers, and then place the substrates in the upper chambers. The isolated chambers in the load lock chamber may have a pivotably attached lid that may be opened to access the inside of the isolated chambers.

Abstract: Automated systems and methods for adapting semiconductor fabrication tools to process wafers of different diameters are described. In one embodiment, a method comprises providing a semiconductor fabrication tool, placing an adapter ring on a plurality of ring holders via a robotic arm, the plurality of ring holders being operable to support the adapter ring at a vertical distance from a stage heater and the stage heater being movable in a vertical direction, placing a first semiconductor wafer on the stage heater via the robotic arm, the first semiconductor wafer having a first diameter, and moving the stage heater upward to receive the adapter ring from the plurality of ring holders and to cover a portion of the stage heater during processing of the first semiconductor wafer.

Abstract: A method and a computer readable medium includes instructions for obtaining time data as programmed into processing recipes or as recorded when a wafer is processed and transferred during lithography operations. The data is parsed and saved into an MES database. A report server accesses the database responsive to a query made of the database. A query may specify one or more fabrication parameters. The specified fabrication parameter or parameters is fixed and a data display is provided that compares times for processing and transferring wafers in various lithography operations used in the production of the semiconductor device and bottlenecks in lithography operations are identified by the comparative data.

Abstract: A heat-treating apparatus capable of realizing a highly precise processing maintaining a high degree of safety, and a method of producing substrates are provided. The heat-treating apparatus comprises a reaction tube for treating substrates; a manifold for supporting the reaction tube; and a heater provided surrounding the reaction tube to heat the interior of reaction tube; wherein the reaction tube and the manifold are in contact with each other as their continuous flat surfaces come in contact with each other; a cover member is provided to cover the contact portion between the reaction tube and the manifold from the outer side; and the cover member is provided with at least either a gas feed port or an exhaust port communicated with a space formed among the cover member, the reaction tube and the manifold.

Abstract: Disclosed herein is a vertical heat treatment apparatus which includes a thermal reactor having a reactor opening, a cover that hermetically closes the reactor opening, a holder that holds a large number of to-be-processed substrates via a ring-shaped support plate in such a manner as to arrange the substrates vertically at predetermined intervals, and an elevator mechanism that loads the holder into and unloads the holder from the thermal reactor. A transfer mechanism has a plurality of transfer plates that are arranged at predetermined intervals to carry to-be-processed substrates, and transfers the to-be-processed substrates between the storage container and the holder. The support plate is divided into an outer support plate and an inner support plate. The outer support plate has a cutout section through which the transfer plates can vertically pass to transfer the to-be-processed substrates.

Abstract: An object of the present invention is to provide a method for vapor phase catalytic oxidation which is almost free of variations in reaction states in respective reaction tubes of the fixed bed multi-tube heat-exchanger type reactor.

Abstract: The invention aims to provide substrate treatment equipment that can automatically collect a substrate in a normal condition without needing manual operation. The equipment includes a substrate holder 26 for holding substrates 12 in a multistage manner and a substrate transfer unit 34 for transferring the substrates 12 into the substrate holder 26, wherein a substrate holding condition of the substrate holder 26 is sensed by a sensing section 60. The sensing section 60 has photo-sensors 64a, 64b, and sensing waveforms sensed by the photo-sensors 64a, 64b are compared with a normal waveform. A control section 66 is provided, which controls a substrate transfer unit 34 such that substrates 12 other than at least a substrate 12 that was determined to be abnormal are transferred by the unit.

Abstract: A selective dispensing device (1) is disclosed for limestone in vats (5a, 5b) of a regenerating oven adapted to arrange limestone with greater sizes next to an external wall (7a, 7b) of the vats (5a, 5b) and limestone with smaller sizes next to an internal wall (8a, 8b) of the vats (5a, 5b), comprising at least one mobile bulkhead (11) connected to a drive shaft (13) rotating around a rotation axis (X), such rotation being driven by an actuator system and the mobile bulkhead (11) being able to rotate around the rotation axis X to be alternatively inclined by a first angle (?) and by a second angle (?) with respect to reference plane (Z).

Abstract: Provided is a method for transferring test trays in a handler including a second chamber having two test sites arranged in parallel, a first chamber having a plurality of passages along which a plurality of test trays are horizontally moved, provided over the second chamber, and a third chamber having a plurality of passages along which the plurality of test trays are horizontally moved, provided under the second chamber, the method including steps of (a) enabling two test trays to wait in parallel in a horizontal position at a waiting location provided to a forward section of the handler, (b) loading packaged chips onto the two test trays, (c) rotating the two test trays to be in the upright position, (d) moving upwards the two test trays into the first chamber, (e) heating or cooling the two test trays while moving horizontally the two test trays forward in the first chamber, (f) moving downward the two test trays from the first chamber into the second chamber, (g) moving horizontally the two test trays tow

Abstract: An embodiment of the present invention is a technique to automate transfer of parts for high throughput. A boat transfer unit (BTU) arm carrying a boat containing a plurality of parts is rotated from an initial position to a first position that is below a process chamber. The BTU arm engages a boat support that supports the boat. The BTU arm is moved upward to a second position such that the boat partially enters the process chamber at a distance D with respect to an entrance opening of the process chamber. An elevator arm carrying a pedestal is engaged to lower side of the boat support. The BTU arm is moved away from the second position. The elevator arm is moved upward to fully insert the boat inside the process chamber.

Abstract: In one embodiment, an in-line furnace includes a continuous conveyor configured to hold wafers at an angle relative to ground. The conveyor may have fixedly integrated wafer retainers configured to hold the wafers in slots. The conveyor may be formed by several segments that are joined together. Each of the segments may include a base and a set of wafer retainers formed thereon. The conveyor may be driven to move the wafers through a chamber of the furnace, where the wafers are thermally processed.

Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post-cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre-heated platen and to remove the wafer from the platen to the post-cooling station.

Abstract: The present invention relates to an apparatus and a method for supplying a solid raw material to a grower of silicon or germanium semiconductor single crystal. In the solid raw material supply apparatus including a cylindrical body mounted above a crucible for receiving the solid raw material therein, a bottom cover detachably installed in the lower end of the body and basically formed in the shape of a cone, and a connection means for relatively moving the bottom cover upwards and downwards with regard to the body, the conic bottom cover is made from the same material as a semiconductor to be grown to the single crystal and the solid raw material is charged while the bottom cover is spaced away from the melt in the crucible at a predetermined distance, thereby the bottom cover can be used repetitively, and even though the bottom cover is broken by shocks resulted from the fall of the solid raw material, fragments of the bottom cover do not contaminate the melt.

Abstract: A Bernoulli wand for transporting thin (e.g., 200 mm) semiconductor wafers between a rack and a hot process chamber. The wand has a head portion that is configured to cover the entire wafer. The head has a plurality of gas outlets configured to produce a flow of gas along an upper surface of a wafer to create a pressure differential between the upper surface of the wafer and the lower surface of the wafer. The pressure differential generates a lift force that supports the wafer below the head portion of the wand in a substantially non-contacting manner, employing the Bernoulli principle.

Abstract: A load lock chamber includes a chamber. A vacuum pump is connected to the bottom of the chamber through a pipe. A cooling pipe is buried in the upper part of the chamber. One and the other ends of the cooling pipe are connected with a refrigerant circulator. When the pressure in the chamber is reduced, the chamber continues to be cooled during the period between when the pressure in the chamber becomes lower than a threshold and immediately before the inside of the chamber is released to atmospheric pressure.

Abstract: Automation of the delivery of a particulate to a tube contained in a reformer type heater with vertical tubes is disclosed and includes a hopper having an opening at the lower end. A slide gate is mounted on the hopper and selectively projects over the opening in the hopper. A box mounted below the hopper. A primary ramp is mounted in the box and underlaps the opening in the hopper. The primary ramp has an angle of inclination and extends to a lower end of the box. The primary ramp also has a screen. A cone is connected to the box proximate to one end of the primary ramp and a tube is connected to the lower end of the cone for conveying particulate to a tube loading adaptor. A dust collection cone is connected to the box underlapping the primary ramp and a discharge port is connected to the lower end of the dust collection cone. The tube loading adaptor is positioned for connection to the tube in the reformer type heater with vertical tubes. A vibrator is connected to the box.

Abstract: When the processing temperature in a heater should be changed between lots, for example, a foremost substrate in a subsequent lot is transported to a position close to the heater such as a substrate holding part, and is held in standby thereat until adjustment of a processing environment (namely, change of the processing temperature) is completed. The substrate held in standby is thereafter transported to the heater. As compared with the case in which substrates are placed in standby in an indexer, substrates can be fed faster to the heater after change of the processing temperature, thereby suppressing throughput reduction.

Abstract: A robotic semiconductor handling system includes two robot arms for transferring substrates between processing, cooling, and storage stations. The first robot arm has a paddle-type end effector adapted such that it can support one substrate at a primary location as well as a second substrate at a secondary staging location. The second robot arm is a Bernoulli-style wand that transfers a substrate from the primary location to the secondary one, and transfers substrates from either location to the process chamber. The use of the dual-location paddle allows for a significant reduction in cycle-time over a single paddle location and a Bernoulli wand system.

Abstract: A method and system for transporting a plurality of substrates between a transfer chamber and at least one processing chamber. The system includes a chuck assembly with a plurality of chucks configured to receive wafer substrates, where the chuck assembly is movably configured to provide for transfer of the plurality of substrates between a transfer chamber and a processing chamber. The system provides a structure that allows for the processing of one substrate on a first chuck, while a second substrate is loaded onto a second chuck and prepared for processing.

Abstract: A single opening is formed in a central portion of a susceptor of a vapor phase epitaxial growth system. Consequently, any dopant diffused off outwardly from the back surface of a wafer during an epitaxial growth process can be exhausted through the opening to the beneath side with respect to the susceptor. As a result, it may become difficult for auto-doping to be induced, even with no protective film formed on a back surface of the wafer. Uniformity in a dopant concentration in the surface may be improved and thus a resistivity may be made uniform. Further, since a temperature of the back surface of the wafer is measured through the opening, a heating temperature can be controlled stably, thus allowing a precise temperature control thereof. Consequently, the epitaxial film as well as the distribution of its resistivity may be made uniform across the entire wafer.

Abstract: A lifting mechanism includes a plurality of lift pins which may be driven separately and independently upward to engage an alignment surface of the chamber using ambient atmospheric pressure as the chamber is evacuated by a pump. In the illustrated embodiment, each lift pin includes a piston which is exposed to the internal chamber pressure on one side of the piston, and is exposed to the external ambient pressure on the other side of the piston. As the pump evacuates the chamber, the internal chamber pressure decreases, causing each lift pin piston to drive the associated lift pin upward. Once all the lift pins have securely engaged the alignment surface, the lift pins may be clamped to a linking mechanism to permit a motor to actuate the lift pins during processing operations.

Abstract: A multi-chamber system of an etching facility for manufacturing semiconductor devices occupies a minimum amount of floor space in a cleanroom by installing a plurality of processing chambers in multi-layers and in parallel along a transfer path situated between the processing chambers. The multi-layers number 2 to 5, and the transfer path can be rectangular in shape and need only be slightly wider than the diameter of a wafer. The total width of the multi-chamber system is the sum of the width of one processing chamber plus the width of the transfer path.

Abstract: A workpiece handling system with dual load locks, a transport chamber and a process chamber. Workpieces may be retrieved from one load lock for processing at vacuum pressure, while workpieces are unloaded from the other load lock at the pressure of the surrounding environment. The transport chamber has a transport robot with two arms. Processed workpieces and new workpieces may be exchanged by a simple under/over motion of the two robot arms. The transport robot rotates about a central shaft to align with the load locks or the process chamber. The robot may also be raised or lowered to align the arms with the desired location to which workpieces are deposited or from which workpieces are retrieved. The two load locks may be positioned one above the other such that a simple vertical motion of the robot can be used to select between the two load locks. The two load locks and transport robot allow almost continuous processing.

Abstract: The invention relates to an apparatus and a process for distributing a lumpy bulk material, in particular iron ore which has been at least partially prereduced, onto an extensive surface, in particular onto a fixed bed, this surface extending within a reactor or vessel used in physical or chemical process technology, in particular in a reactor used in a metallurgical plant to produce pig iron or primary steel products, and the lumpy bulk material being charged via at least one charging apparatus, which has at least two, in particular rotationally symmetrical, chutes, which are preferably arranged at the same distance from the vertical longitudinal axis of the reactor.

Abstract: A positive pressure gradient is maintained across an open access port of an interface chamber such as a load lock chamber which provides an interface between a low pressure chamber such as a transfer or buffer chamber, and a high pressure area such as a staging area or factory interface area. When the access port of the interface chamber is open to the high-pressure area, the positive pressure gradient may be used in some applications to inhibit the flow of gasses from the high-pressure area into the interior of the interface chamber.

Abstract: A robotic semiconductor handling system includes two robot arms for transferring substrates between processing, cooling, and storage stations. The first robot arm has a paddle-type end effector adapted such that it can support one substrate at a primary location as well as a second substrate at a secondary staging location. The second robot arm is a Bernoulli-style wand that transfers a substrate from the primary location to the secondary one, and transfers substrates from either location to the process chamber. The use of the dual-location paddle allows for a significant reduction in cycle-time over a single paddle location and a Bernoulli wand system.

Abstract: An outer covering wall (26) and an inner covering wall (27), which are capable of surrounding a rotor (24), can be horizontally moved. A wafer carrier waiting portion (30) is disposed right below the rotor (24). A wafer holding member (41) included in a wafer lifter (40) moves into a wafer carrier (C) containing wafers (W) and mounted on a stage (31) (sliding table 32) included in the wafer carrier waiting portion (30), lifts up the wafers (W) and transfers the wafers (W) to the rotor (24). The outer covering wall (26) or the inner covering wall (27) surrounds the rotor (24) to define a processing chamber. The wafers (W) held on the rotor (24) are subjected to a cleaning process in the processing chamber.

Abstract: An apparatus for automatically and simultaneously loading/unloading a plurality of wafer boats (24) onto/from a cantilever paddle includes a cantilever paddle (47-1) and a carriage (42-1) supporting the cantilever paddle First and second vertical translation mechanisms (34A,B) each include a stationary part (62,63) and a vertically moveable support (61). First and second horizontal translation mechanisms (50A,B) each have a base (86) supported by one of the vertically moveable supports and a horizontally moveable arm (51) supported by the base (86). A horizontal boat support assembly (102) supports the loaded wafer boats and has an end supported by a first horizontally moveable arm (51A) and another end supported by a second horizontally moveable arm (51B).

Abstract: A method is provided for loading a heated susceptor or a susceptor segment of a deposition reactor with a substrate wafer which is resting on a holding means. Before making contact between the substrate wafer and the susceptor or susceptor segment, a holding position is reached in which the substrate wafer and the susceptor or susceptor segment are at a spaced vertical distance from one another. The substrate wafer is only brought into contact with the susceptor or the susceptor segment after a residence time in this holding position. There is also a device for loading a susceptor, in particular a susceptor segment of a deposition reactor.

Abstract: An apparatus for automatically and simultaneously loading a single long wafer boat or a plurality of wafer boats onto a cantilever paddle includes a stationary first track aligned with a first opening of a diffusion furnace and a first carriage moveable on the first track. The first carriage supports a cantilever paddle. A first vertical translation mechanism includes a first stationary part and a first vertically moveable support. A second vertical translation mechanism includes a second stationary part and a second vertically moveable support. A first horizontal translation mechanism includes a first base supported by the first vertically moveable support and a first horizontally moveable arm supported by the first base. A second horizontal translation mechanism includes a second base supported by the second vertically moveable support and a second horizontally moveable arm supported by the second base.

Abstract: In a CVD apparatus in which a first boat and a second boat are used, the boat detection unit and the boat identifying detection unit of the boat detection device of boat identification means are installed on a waiting plate on which a transfer process is performed by the substrate transfer device with one boat mounted thereon. Two detected bodies corresponding to the boat detection unit and the boat identifying detection unit are projected on the first boat 21A and only one detected body corresponding to the boat detection unit is projected on the second boat. If two detected bodies are detected, the boat detection device determines the boat to be the first boat and, if only one detected body is detected, the boat detection device determines the boat to be the second boat.

Abstract: A catalyst loading system for utilizing catalyst from a bulk supply located adjacent but not on the upper tube sheet of a catalytic reactor and for mechanized measuring of multiple identical quantities of catalyst and for mechanized loading of catalyst pellets into the reaction tubes of the reactor to achieve even drop rate, compaction and outage of the reaction tubes. From the bulk supply, multi-compartment catalyst charging hoppers are individually filled in rapid and accurately measured fashion by mechanized filling equipment having a predetermined sequence of operation that ensures accuracy of volumetric catalyst measurement. The charging hoppers are used for delivery of measured volumes of catalyst of a reactor tube loading mechanism which may take the form of a mobile cart framework being selectively positionable relative to the upper tube sheet and reaction tubes of a catalytic reactor to be charged with catalyst pellets.

Abstract: A system for facilitating wafer transfer comprises a susceptor unit consisting of an inner susceptor section which rests within an outer susceptor section. A vertically movable and rotatable support spider located beneath the susceptor unit can rotate into positions to engage either the inner or the outer susceptor sections. When the inner section is engaged, the support spider lifts the inner section vertically out of the outer section. When the outer section is engaged, the support spider raises and lowers the entire susceptor unit. A robotic arm end effector engaging only the lower surface of the outer edge of the wafer permits hot wafer pick-up and unloading by the inner susceptor section. Several end effectors are disclosed that minimize non-uniform thermal effect on the substrate.

Abstract: A catalyst loading system for utilizing catalyst from a bulk supply located adjacent but not on the upper tube sheet of a catalytic reactor and for mechanized measuring of multiple identical quantities of catalyst and for mechanized loading of catalyst pellets into the reaction tubes of the reactor to achieve even drop rate, compaction and outage of the reaction tubes. A pair of electronic vibrators are mounted to the cart framework and provide for support and vibratory movement of a vibratory tray having a catalyst feed hopper adapted to feed catalyst pellets to a plurality of generally parallel catalyst transfer troughs along which catalyst pellets are moved by vibration of the vibratory tray to a plurality of drop tubes. A compartmented hopper is fixed to the vibratory tray and controllably feeds catalyst pellets into respective catalyst transfer troughs.

Abstract: An exclusive carrier (EQMC) housing therein equipment testing wafers (EQMW) is housed in a carrier housing rack (32) of a treatment equipment. An equipment testing parameter setting section (62) is provided for setting a cycle, in which the equipment testing wafers (EQMW) are carried in a heat treating furnace (21), and the number and holding position of the equipment testing wafers on a wafer boat (23). The equipment testing wafers (EQMW) are held in dummy wafer holding regions (D) at the upper and lower end portions of the wafer boat (23) to be heat-treated in the set cycle. After the heat treatments of all the equipment testing wafers (EQMW) in the equipment testing carrier (EQMC) are completed, the wafers (EQMW) are transferred to a detecting device, and the state of the treatment equipment is grasped on the basis of the treated state.

Abstract: A system for facilitating wafer transfer comprises a susceptor unit consisting of an inner susceptor section which rests within an outer susceptor section. A vertically movable and rotatable support spider located beneath the susceptor unit can rotate into positions to engage either the inner or the outer susceptor sections. When the inner section is engaged, the support spider lifts the inner section vertically out of the outer section. When the outer section is engaged, the support spider raises and lowers the entire susceptor unit. A fork type robotic arm end effector permits wafer pick up and unloading by the inner susceptor section.

Abstract: A vertical heat treatment apparatus for semiconductor wafers (W) including a heat treating furnace (19) which is heated to 600.degree. C. or higher. In the heat treating furnace (19), the wafers (W) are subjected to batch treatment while they are placed on a boat (16). A preparatory vacuum chamber (102) is airtightly connected to a lower side of the heat treating furnace (19). Disposed in the preparatory vacuum chamber (102) are a horizontal transfer mechanism (201) and a vertical transfer mechanism (202) for transferring the boat (16). The two transfer mechanisms (201 and 202) are supported by support members (29a and 33a) mounted on a mechanical base (28). The preparatory vacuum chamber (102) and the support members (29a and 33a) are airtightly connected to each other by means of bellows.

Abstract: Semiconductor wafers are transferred from a closed type cassette into a wafer boat. First, the lowermost five wafers of 13 wafers held in the cassette are simultaneously transferred by five arms from the cassette into the uppermost part of the wafer boat. Then, the lowermost three wafers among the wafers left in the cassette are simultaneously transferred by the upper three arms from the cassette into the boat immediately under the five wafers previously transferred. Further, the uppermost five wafers left in the cassette are simultaneously transferred by the five arms from the cassette into the boat immediately under the eight wafers previously transferred.