Tantalum Base Patents (Class 420/427)
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Patent number: 5171379Abstract: A wrought metal alloy product having a tantalum or niobium base metal, 10 to 1000 ppm silicon, and 10 to 10000 ppm yttrium nitride. Fine uniform grain size contributes to improved ductility.Type: GrantFiled: May 15, 1991Date of Patent: December 15, 1992Assignee: Cabot CorporationInventors: Prabhat Kumar, Charles E. Mosheim
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Patent number: 5154883Abstract: Intermetallic compounds of ruthenium and tantalum are disclosed comprising about 46 to 53 atomic percent tantalum and the balance substantially ruthenium. Another intermetallic compound is comprised of, about 45 to 54 atomic percent tantalum, up to about 35 atomic percent cobalt, and the balance substantially ruthenium, with ruthenium plus cobalt being less than 55 atomic percent. Another intermetallic compound is comprised of, about 45 to 54 atomic percent tantalum, up to about 25 atomic percent iron, and the balance substantially ruthenium. The intermetallic compounds have a high hardness up to about 950.degree. C. and have good room-temperature toughness.Type: GrantFiled: February 9, 1990Date of Patent: October 13, 1992Assignee: General Electric CompanyInventor: Robert L. Fleischer
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Patent number: 5082491Abstract: Ingot-derived and sodium-reduced agglomerated tantalum powders having improved flow characteristics and lead pull-out strength that find particular utility in manufacture of anodes for capacitors. Powder size distribution is in the range of -60 to +400 mesh, preferably -60 to +250 mesh, containing less than 5 wt % powder above the upper and below the lower range limits.Type: GrantFiled: September 6, 1990Date of Patent: January 21, 1992Assignee: V Tech CorporationInventor: Carlos F. Rerat
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Patent number: 5076858Abstract: A method of preparing a TiAl base composition containing niobium and chromium according to the formula Ti.sub.48 Al.sub.48 Cr.sub.2 Nb.sub.2 is taught. The composition is melted and cast. It is then homogenized at temperatures up to 1400.degree. C. The cast and homogenized composition is enclosed in a restraining band, heated to forging temperature and forged. Following the forging, it is annealed and aged.Type: GrantFiled: May 22, 1989Date of Patent: December 31, 1991Assignee: General Electric CompanyInventor: Shyh-Chin Huang
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Patent number: 5049355Abstract: Process for producing a ductile, high strength, oxide dispersion hardened sintered alloy based on a metal having a high melting point. In the past, oxide dispersion has played only a minor role in comparison with other known processes for increasing strength. The process disclosed permits cost effective production of metallic materials which possess a strength hitherto unattainable by oxide dispersion and a higher ductility than prior art materials. As a result, the metallic and nonmetallic foreign components in the sintered alloy can be restricted to the relatively small quantities of dispersoids and any dissolved residual oxygen. The process consists in an annealing treatment and calls for a specific choice of basis metal and suitable oxide dispersoid.Type: GrantFiled: January 8, 1990Date of Patent: September 17, 1991Assignee: Schwarzkopf Development CorporationInventors: Udo Gennari, Wolfgang Glatzle
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Patent number: 5030300Abstract: An amorphous aluminum-refractory metal alloy with special characteristics such as high corrosion resistance, high wear resistance and considerable toughness, consisting of Al and at least one element selected from refractory metals of Ta, Nb, Mo and W, a portion of the set forth refractory metals being allowed to be substituted with at least one element selected from Ti and Zr.Type: GrantFiled: December 21, 1989Date of Patent: July 9, 1991Assignees: Yoshida Kogyo K.K., Koji HashimotoInventors: Koji Hashimoto, Hideaki Yoshioka, Katsuhiko Asami, Asahi Kawashima
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Patent number: 4957541Abstract: Tantalum powders of capacitor grade are provided, containing interacting silicon and phosphorous dopants to effect low D.C. leakage of electrolytic capacitors having anodes made from such powders, with anodic formation at low temperatures (40.degree.-60.degree. C.), consistent with high capacitance.Type: GrantFiled: November 1, 1988Date of Patent: September 18, 1990Assignee: NRC, Inc.Inventors: Terrance B. Tripp, Richard W. Hildreth
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Patent number: 4954169Abstract: Earth acid metal powders, such as tantalum or niobium, useful in the production of electrolytic capacitors and other electronic components, are agglomerates of sintered compacts, wherein the mean grain size of the agglomerates is no more than 2.0 .mu.m, determined by the Fisher Sub-Sieve Sizer, and wherein the agglomerates consist of primary individual agglomerated particles of mean grain size of no more than 0.7 .mu.m.Type: GrantFiled: June 12, 1989Date of Patent: September 4, 1990Assignee: Bayer AktiengesellschaftInventor: Dieter Behrens
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Patent number: 4940490Abstract: An improved flaked tantalum powder and process for making the flaked powder are disclosed. The powder is characterized by having a Scott density greater than about 18 g/in.sup.3 and preferably at least about 90% of the flake particles having no dimension greater than about 55 micrometers. Agglomerates of the flaked tantalum powder, provide improved flowability, green strength and presssing characteristics compared to conventional flaked tantalum powders. The improved flaked tantalum powder can be made by preparing a flaked tantalum and then reducing the flake size until a Scott density greater than about 18 g/in.sup.3 is achieved. The invention also provides pellets and capacitors prepared from the above-described flaked tantalum powder.Type: GrantFiled: June 21, 1988Date of Patent: July 10, 1990Assignee: Cabot CorporationInventors: James A. Fife, Marlyn F. Getz
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Patent number: 4880482Abstract: A highly corrosion-resistant amorphous Cu alloys with at least one element selected from the group of Ta and Nb and other Cu-Ta alloys with at least one element selected from the group of Nb, Ti and Zr, wherein the total content of alloying elements other than Cu ranges from 15 to 85 at %.Type: GrantFiled: April 19, 1988Date of Patent: November 14, 1989Assignees: Mitsui Engineering & Shipbuilding Co., Ltd., Koji HashimotoInventors: Koji Hashimoto, Kimikado Miura, Katsuhiko Asami, Asahi Kawashima
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Patent number: 4844746Abstract: A method is described for the production of a ductile tantalum stock material for high-speed deformation use. A bar-shaped body is made from directly reduced tantalum powder of a given purity and is remelted repeatedly as a consumable electrode in an electron beam furnace. The obtained ingot is shaped into a slab which, after being machined to a smooth surface, is further worked to produce the stock material. At least one heat treatment under vacuum is included in the process of making the stock material.Type: GrantFiled: March 23, 1988Date of Patent: July 4, 1989Assignee: W. C. Heraeus GmbHInventors: Michael Hormann, Otto Bach
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Patent number: 4803046Abstract: A method for working high-purity, mechanically strong targets containing brittle phases in the equilibrium state. First a porous body is manufactured from part of the component with a higher melting point and thereafter the porous body is impregnated with an impregnating composition corresponding to the remainder of the components required to form the ultimate composition of the target. The composition of the impregnation material must be selected in such a manner that the reaction between the impregnation material and the porous body shall produce no phases of low melting points.Type: GrantFiled: August 14, 1987Date of Patent: February 7, 1989Assignee: Demetron Gesellschaft Fuer Elektronik-Werkstoffe m.b.H.Inventors: Juergen Hausselt, Stephan-U. Schittny, Dieter Kaufmann
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Patent number: 4786468Abstract: New alloys highly resistant to corrosion by concentrated acid and having excellent adhering properties when coated on stainless steel are formed of 60 to 90 atomic percent tantalum or tungsten, with the remainder being iron, chromium and nickel in the proportions found in stainless steel, e.g., 304L stainless steel. They may be formed in situ on the surface to be coated by sputter deposition, using a sputter target which is part tungsten or tantalum, and part stainless steel.Type: GrantFiled: June 4, 1987Date of Patent: November 22, 1988Assignee: Battelle Memorial InstituteInventors: Rong Wang, Martin D. Merz
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Patent number: 4594104Abstract: The present invention provides a method for producing a consolidated article composed of a transition metal alloy. The method includes the step of selecting a rapidly solidified alloy which is at least about 50% glassy. The alloy is formed into a plurality of alloy bodies, and these alloy bodies are compacted at a pressing temperature of not more than about 0.6 Ts (solidus temperature in .degree.C.) to consolidate and bond the alloy bodies together into a glassy metal compact having a density of at least about 90% T.D. (theoretical density). The compacted glassy alloy bodies are then heat treated at a temperature generally ranging from about 0.55-0.85 Ts, but, in any case, above the alloy crystallization temperature, for a time sufficient to produce a fine grain crystalline alloy structure in the compacted article.Type: GrantFiled: April 26, 1985Date of Patent: June 10, 1986Assignee: Allied CorporationInventor: Derek Reybould
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Patent number: 4526749Abstract: Disclosed is a novel refractory metal alloy that retains the essential characteristics of pure tantalum and, additionally, has improved engineering characteristics and may be produced at a lower cost than pure tantalum. The alloy nominally contains, by weight, about 58% tantalum, about 2.0% molybdenum, about 2.5% tungsten and about 37.5% columbium.Type: GrantFiled: July 2, 1984Date of Patent: July 2, 1985Assignee: Cabot CorporationInventors: Louis E. Huber, Jr., Harry D. Schwartz
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Patent number: 4447825Abstract: Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition.Type: GrantFiled: February 2, 1981Date of Patent: May 8, 1984Assignee: Tokyo Shibaura Denki Kabushiki KaishaInventors: Yasuhisa Oana, Nobuaki Yasuda, Masato Yamashita, Norio Ozawa
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Patent number: RE32260Abstract: Tantalum powder capable of producing anodes of improved electrical capacitance is prepared by the addition of phosphorus-containing materials in amounts from about 5 to about 400 ppm based on elemental phosphorus. In one embodiment, the flow properties of the powder are also improved.Type: GrantFiled: July 24, 1984Date of Patent: October 7, 1986Assignee: Fansteel Inc.Inventor: Stanley S. Fry