Tantalum Base Patents (Class 420/427)
  • Patent number: 5171379
    Abstract: A wrought metal alloy product having a tantalum or niobium base metal, 10 to 1000 ppm silicon, and 10 to 10000 ppm yttrium nitride. Fine uniform grain size contributes to improved ductility.
    Type: Grant
    Filed: May 15, 1991
    Date of Patent: December 15, 1992
    Assignee: Cabot Corporation
    Inventors: Prabhat Kumar, Charles E. Mosheim
  • Patent number: 5154883
    Abstract: Intermetallic compounds of ruthenium and tantalum are disclosed comprising about 46 to 53 atomic percent tantalum and the balance substantially ruthenium. Another intermetallic compound is comprised of, about 45 to 54 atomic percent tantalum, up to about 35 atomic percent cobalt, and the balance substantially ruthenium, with ruthenium plus cobalt being less than 55 atomic percent. Another intermetallic compound is comprised of, about 45 to 54 atomic percent tantalum, up to about 25 atomic percent iron, and the balance substantially ruthenium. The intermetallic compounds have a high hardness up to about 950.degree. C. and have good room-temperature toughness.
    Type: Grant
    Filed: February 9, 1990
    Date of Patent: October 13, 1992
    Assignee: General Electric Company
    Inventor: Robert L. Fleischer
  • Patent number: 5082491
    Abstract: Ingot-derived and sodium-reduced agglomerated tantalum powders having improved flow characteristics and lead pull-out strength that find particular utility in manufacture of anodes for capacitors. Powder size distribution is in the range of -60 to +400 mesh, preferably -60 to +250 mesh, containing less than 5 wt % powder above the upper and below the lower range limits.
    Type: Grant
    Filed: September 6, 1990
    Date of Patent: January 21, 1992
    Assignee: V Tech Corporation
    Inventor: Carlos F. Rerat
  • Patent number: 5076858
    Abstract: A method of preparing a TiAl base composition containing niobium and chromium according to the formula Ti.sub.48 Al.sub.48 Cr.sub.2 Nb.sub.2 is taught. The composition is melted and cast. It is then homogenized at temperatures up to 1400.degree. C. The cast and homogenized composition is enclosed in a restraining band, heated to forging temperature and forged. Following the forging, it is annealed and aged.
    Type: Grant
    Filed: May 22, 1989
    Date of Patent: December 31, 1991
    Assignee: General Electric Company
    Inventor: Shyh-Chin Huang
  • Patent number: 5049355
    Abstract: Process for producing a ductile, high strength, oxide dispersion hardened sintered alloy based on a metal having a high melting point. In the past, oxide dispersion has played only a minor role in comparison with other known processes for increasing strength. The process disclosed permits cost effective production of metallic materials which possess a strength hitherto unattainable by oxide dispersion and a higher ductility than prior art materials. As a result, the metallic and nonmetallic foreign components in the sintered alloy can be restricted to the relatively small quantities of dispersoids and any dissolved residual oxygen. The process consists in an annealing treatment and calls for a specific choice of basis metal and suitable oxide dispersoid.
    Type: Grant
    Filed: January 8, 1990
    Date of Patent: September 17, 1991
    Assignee: Schwarzkopf Development Corporation
    Inventors: Udo Gennari, Wolfgang Glatzle
  • Patent number: 5030300
    Abstract: An amorphous aluminum-refractory metal alloy with special characteristics such as high corrosion resistance, high wear resistance and considerable toughness, consisting of Al and at least one element selected from refractory metals of Ta, Nb, Mo and W, a portion of the set forth refractory metals being allowed to be substituted with at least one element selected from Ti and Zr.
    Type: Grant
    Filed: December 21, 1989
    Date of Patent: July 9, 1991
    Assignees: Yoshida Kogyo K.K., Koji Hashimoto
    Inventors: Koji Hashimoto, Hideaki Yoshioka, Katsuhiko Asami, Asahi Kawashima
  • Patent number: 4957541
    Abstract: Tantalum powders of capacitor grade are provided, containing interacting silicon and phosphorous dopants to effect low D.C. leakage of electrolytic capacitors having anodes made from such powders, with anodic formation at low temperatures (40.degree.-60.degree. C.), consistent with high capacitance.
    Type: Grant
    Filed: November 1, 1988
    Date of Patent: September 18, 1990
    Assignee: NRC, Inc.
    Inventors: Terrance B. Tripp, Richard W. Hildreth
  • Patent number: 4954169
    Abstract: Earth acid metal powders, such as tantalum or niobium, useful in the production of electrolytic capacitors and other electronic components, are agglomerates of sintered compacts, wherein the mean grain size of the agglomerates is no more than 2.0 .mu.m, determined by the Fisher Sub-Sieve Sizer, and wherein the agglomerates consist of primary individual agglomerated particles of mean grain size of no more than 0.7 .mu.m.
    Type: Grant
    Filed: June 12, 1989
    Date of Patent: September 4, 1990
    Assignee: Bayer Aktiengesellschaft
    Inventor: Dieter Behrens
  • Patent number: 4940490
    Abstract: An improved flaked tantalum powder and process for making the flaked powder are disclosed. The powder is characterized by having a Scott density greater than about 18 g/in.sup.3 and preferably at least about 90% of the flake particles having no dimension greater than about 55 micrometers. Agglomerates of the flaked tantalum powder, provide improved flowability, green strength and presssing characteristics compared to conventional flaked tantalum powders. The improved flaked tantalum powder can be made by preparing a flaked tantalum and then reducing the flake size until a Scott density greater than about 18 g/in.sup.3 is achieved. The invention also provides pellets and capacitors prepared from the above-described flaked tantalum powder.
    Type: Grant
    Filed: June 21, 1988
    Date of Patent: July 10, 1990
    Assignee: Cabot Corporation
    Inventors: James A. Fife, Marlyn F. Getz
  • Patent number: 4880482
    Abstract: A highly corrosion-resistant amorphous Cu alloys with at least one element selected from the group of Ta and Nb and other Cu-Ta alloys with at least one element selected from the group of Nb, Ti and Zr, wherein the total content of alloying elements other than Cu ranges from 15 to 85 at %.
    Type: Grant
    Filed: April 19, 1988
    Date of Patent: November 14, 1989
    Assignees: Mitsui Engineering & Shipbuilding Co., Ltd., Koji Hashimoto
    Inventors: Koji Hashimoto, Kimikado Miura, Katsuhiko Asami, Asahi Kawashima
  • Patent number: 4844746
    Abstract: A method is described for the production of a ductile tantalum stock material for high-speed deformation use. A bar-shaped body is made from directly reduced tantalum powder of a given purity and is remelted repeatedly as a consumable electrode in an electron beam furnace. The obtained ingot is shaped into a slab which, after being machined to a smooth surface, is further worked to produce the stock material. At least one heat treatment under vacuum is included in the process of making the stock material.
    Type: Grant
    Filed: March 23, 1988
    Date of Patent: July 4, 1989
    Assignee: W. C. Heraeus GmbH
    Inventors: Michael Hormann, Otto Bach
  • Patent number: 4803046
    Abstract: A method for working high-purity, mechanically strong targets containing brittle phases in the equilibrium state. First a porous body is manufactured from part of the component with a higher melting point and thereafter the porous body is impregnated with an impregnating composition corresponding to the remainder of the components required to form the ultimate composition of the target. The composition of the impregnation material must be selected in such a manner that the reaction between the impregnation material and the porous body shall produce no phases of low melting points.
    Type: Grant
    Filed: August 14, 1987
    Date of Patent: February 7, 1989
    Assignee: Demetron Gesellschaft Fuer Elektronik-Werkstoffe m.b.H.
    Inventors: Juergen Hausselt, Stephan-U. Schittny, Dieter Kaufmann
  • Patent number: 4786468
    Abstract: New alloys highly resistant to corrosion by concentrated acid and having excellent adhering properties when coated on stainless steel are formed of 60 to 90 atomic percent tantalum or tungsten, with the remainder being iron, chromium and nickel in the proportions found in stainless steel, e.g., 304L stainless steel. They may be formed in situ on the surface to be coated by sputter deposition, using a sputter target which is part tungsten or tantalum, and part stainless steel.
    Type: Grant
    Filed: June 4, 1987
    Date of Patent: November 22, 1988
    Assignee: Battelle Memorial Institute
    Inventors: Rong Wang, Martin D. Merz
  • Patent number: 4594104
    Abstract: The present invention provides a method for producing a consolidated article composed of a transition metal alloy. The method includes the step of selecting a rapidly solidified alloy which is at least about 50% glassy. The alloy is formed into a plurality of alloy bodies, and these alloy bodies are compacted at a pressing temperature of not more than about 0.6 Ts (solidus temperature in .degree.C.) to consolidate and bond the alloy bodies together into a glassy metal compact having a density of at least about 90% T.D. (theoretical density). The compacted glassy alloy bodies are then heat treated at a temperature generally ranging from about 0.55-0.85 Ts, but, in any case, above the alloy crystallization temperature, for a time sufficient to produce a fine grain crystalline alloy structure in the compacted article.
    Type: Grant
    Filed: April 26, 1985
    Date of Patent: June 10, 1986
    Assignee: Allied Corporation
    Inventor: Derek Reybould
  • Patent number: 4526749
    Abstract: Disclosed is a novel refractory metal alloy that retains the essential characteristics of pure tantalum and, additionally, has improved engineering characteristics and may be produced at a lower cost than pure tantalum. The alloy nominally contains, by weight, about 58% tantalum, about 2.0% molybdenum, about 2.5% tungsten and about 37.5% columbium.
    Type: Grant
    Filed: July 2, 1984
    Date of Patent: July 2, 1985
    Assignee: Cabot Corporation
    Inventors: Louis E. Huber, Jr., Harry D. Schwartz
  • Patent number: 4447825
    Abstract: Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition.
    Type: Grant
    Filed: February 2, 1981
    Date of Patent: May 8, 1984
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Yasuhisa Oana, Nobuaki Yasuda, Masato Yamashita, Norio Ozawa
  • Patent number: RE32260
    Abstract: Tantalum powder capable of producing anodes of improved electrical capacitance is prepared by the addition of phosphorus-containing materials in amounts from about 5 to about 400 ppm based on elemental phosphorus. In one embodiment, the flow properties of the powder are also improved.
    Type: Grant
    Filed: July 24, 1984
    Date of Patent: October 7, 1986
    Assignee: Fansteel Inc.
    Inventor: Stanley S. Fry