Abstract: Provided is a method of purifying monosilane. More particularly, the method includes removing impurities from a crude material containing monosilane and ethylene by fractional distillation (operation 1), and removing ethylene and residual impurities by passing the crude material purified in operation 1 through activated carbon (operation 2). According to the method, high-purity monosilane may be more simply and effectively obtained without additional production of byproducts by selectively adsorbing ethylene, which is difficult to separate by fractional distillation, using an activated carbon.

Abstract: The invention relates to a method for producing neopentasilanes of the general formula (1) Si(SiR3)4 (1), wherein silicon compounds of the general formula (2) R3Si—(Si—)xSiR3 (2), wherein R is selected from H, Cl, Br, and I and x stands for a nonnegative integer up to 5, are reacted in the presence of ether compounds (E).

Abstract: The invention relates to a method for the catalytic hydrogenation of halogenated silanes or halogenated germanes, according to which halogenated monosilanes, oligosilanes or polysilanes, or monogermanes, oligogermanes or polygermanes, are hydrogenated or partially hydrogenated with hydrogenated Lewis acid-base pairs, and the partially halogenated Lewis acid base pairs can be rehydrogenated, especially with further addition of H2 and the heterolysis thereof on the Lewis acid-base pairs, releasing hydrogen halide.

Abstract: A polysilane production process comprising reacting a specific silane compound typified by a cyclic silane compound represented by the following formula (2) in the presence of a binuclear metal complex represented by the following formula (4). SijH2j??(2) (in the formula (2), j is an integer of 3 to 10.) [CpM(?-CH2)]2??(4) (in the formula (4), Cp is a cyclopentadienyl-based ligand, M is a metal atom selected from Rh and Ir, and the bond between M's is a double bond.

Abstract: An apparatus for producing trichlorosilane, including: a reaction vessel in which a supply gas containing silicon tetrachloride and hydrogen is supplied to an internal reaction passageway to produce a reaction product gas containing trichlorosilane and hydrogen chloride; a heating mechanism having a heater that heats the interior of the reaction vessel; a gas supply section that supplies the supply gas in the reaction vessel; and a gas discharge section that discharges the reaction product gas from the reaction vessel to the outside, wherein the heater is disposed in the center of the reaction vessel, and the reaction passageway is disposed in the periphery of the heater.

Abstract: This invention is directed to compositions of matter comprising a hydride ion having a binding energy greater than about 0.8 eV. The claimed hydride ions may be combined with cations, including a proton, to form novel hydrides.

Abstract: Silicon deposits are suppressed at the wall of a fluidized bed reactor by a process in which an etching gas is fed near the wall of the reactor. The etching gas includes tetrachlorosilane. A Siemens reactor may be integrated into the process such that the vent gas from the Siemens reactor is used to form a feed gas and/or etching gas fed to the fluidized bed reactor.

Abstract: Method of preparing a compound of formula SinH2n+2 in which n is an integer greater than or equal to 1 and less than or equal to 4, by reaction of at least one silicide or silicon alloy in the form of powder of formula M1xM2ySiz, in which M1 is a reducing metal, M2 an alkali or alkaline-earth metal, x, y and z varying from 0 to 1, z being different from 0 and x+y different from 0, with an aqueous solution comprising CO2, said solution is or is not saturated with CO2 at the temperature and pressure of the reaction.

Abstract: The invention relates to a hydrogen reservoir comprising a substance suitable for storing hydrogen wherein said substance is made up of nano-structured silicon. It also relates to a process for manufacturing and a method for use of this hydrogen reservoir.

Abstract: Methods for the production of trisilane from the pyrolysis of disilane in a single reactor.

Abstract: A process for producing silicon-containing particles having an extremely small particle diameter by a simple process without using surface-active agents or the like. The process is characterized by forming silicon-containing particles as a result of phase separation from an organic polymer, wherein the phase separation is achieved by an addition reaction, condensation reaction, ring-opening reaction, or a radical reaction of a curable silicon-containing compound or a curable composition that contains said compound, and the silicon-containing compound or the composition is maintained in a uniform liquid, fused, or dissolved phase with the organic polymer that is free of silicon and does not participate in the curing reaction of the silicon-containing compound or the composition.

Abstract: The invention relates to a catalyst, the use thereof, and a method for dismutation of halosilanes containing hydrogen, in particular chlorosilanes containing hydrogen.

Abstract: The crude oil reserves have a calculable time limit. Starting materials containing silicon dioxide are preferably used as raw materials.

Abstract: A hydrogenated, silicon based semiconductor alloy has a defect density of less than 1016 cm?3. The alloy may comprise a hydrogenated silicon alloy or a hydrogenated silicon-germanium alloy. Hydrogen content of the alloy is generally less than 15%, and in some instances less than 11%. The tandem photovoltaic devices which incorporate the alloy exhibit low levels of photo degradation. In some instances, the material is fabricated by a high speed VHF deposition process.

Abstract: Polycrystalline silicon is prepared by thermally decomposing a reaction gas comprising hydrogen and a silicon-containing gas in a reaction chamber containing heated silicon, depositing additional silicon thereon, and forming an offgas; and separating the offgas into a first fraction comprising trichlorosilane and lower boiling chlorosilanes, and a second offgas fraction comprising components having a higher boiling point than trichlorosilane; recycling the first offgas fraction to the reaction gas of a polycrystalline silicon deposition; and separating the second offgas fraction into tetrachlorosilane and a high boiler fraction of high boilers, optionally also containing some tetrachlorosilane, and supplying the high boiler fraction to the reaction gas of a silicon deposition and heating the reaction gas to a temperature which ensures that the high boiler fraction is present in gaseous form on entry into the reaction chamber of the deposition reactor.

Abstract: A novel application of a transition metal oxo complex, a cationic oxorhenium(V) oxazoline, in the production of molecular hydrogen (H2) from the catalytic hydrolytic oxidation of organosilanes. The reaction is characterized by quantitative hydrogen yields, low catalyst loading, ambient conditions, high selectivity for silanols, water as the only co-reagent, and no solvent requirement. The amount of hydrogen produced is proportional to the water stoichiometry. For example, reaction mixtures of polysilyl organics such as HC(SiH3)3 and water contain potentially greater than 6 weight percent hydrogen. Kinetic and isotope labeling experiments reveal a new mechanistic paradigm for the activation of Si—H bonds by oxometalates.

Abstract: Provided is a process for readily and efficiently producing monosilane which is industrially significantly useful.

Abstract: A method for depositing a Si-containing film by plasma CVD is provided, and this method uses a silane compound as a film source. The silane compound has hydrogen atom or an alkoxy group as a reactive group, and has at least 2 silicon atoms in the molecule. The at least 2 silicon atoms are bonded by an intervening saturated hydrocarbon group. The ratio of the number of carbon atoms other than those included in the alkoxy group [C] to the number of silicon atoms [Si] ([C]/[Si]) is at least 3, and all silicon atoms are directly bonded to at least 2 carbon atoms. This method has realized an effective film deposition rate. Chemical stability of the film has also been improved by providing hydrophobicity with the film simultaneously with the suppression of the reactivity of the silicon atom for the nucleophilic reaction.

Abstract: A process for the recovery of silicon includes providing silicon-containing solids recovered from a silicon manufacturing process, said recovered silicon-containing solids being substantially free of semiconductor dopants; converting the recovered silicon-containing solids into gaseous silicon forms; subjecting to purification by minimal distillation; collecting the gaseous silicon forms as a condensed liquid of silicon-containing compounds; and utilizing the silicon-containing compounds for silicon deposition.

Abstract: The invention describes a process for producing silane, wherein magnesium hydride and halosilanes are reacted into silane and a by-product separable into at least two compounds, in a liquid reaction medium at a temperature T?100° C. and a reaction time/residence time <60 min, and wherein at least one of said compounds is recycled.

Abstract: Methods of producing semiconductor materials via polymerization techniques are provided. The methods include reacting a precursor compound containing a metalloid semiconductor element, such as silicon or germanium, with a catalyst to form a polymer composition. The polymer precursor is then decomposed to form an electrically conductive hydrogenated composition containing silicon or germanium. The methods employ relatively safe raw materials and products and result in high yield reactions. Moreover, the polymers can be applied in liquid form and can be used as an “ink” or liquid to selectively coat a substrate.

Abstract: Compounds are provided comprising at least one neutral, positive, or negative hydrogen species having a binding energy greater than its corresponding ordinary hydrogen species, or greater than any hydrogen species for which the corresponding ordinary hydrogen species is unstable or is not observed. Compounds comprise at least one increased binding energy hydrogen species and at least one other atom, molecule, or ion other than an increased binding energy hydrogen species. One group of such compounds contains one or more increased binding energy hydrogen species selected from the group consisting of Hn, Hn?, and Hn+ where n is a positive integer, with the proviso that n is greater than 1 when H has a positive charge.

Abstract: Process for supplying a fuel cell with hydrogen, which includes the steps:—intermediate storage of (poly)silanes or (poly)silane solutions—transfer of the (poly)silanes to a reaction chamber—reaction or hydrolysis of the silanes or silane solutions in the reaction chamber with an aqueous solution to liberate H2,—removal of the solid and/or liquid reaction products from the reaction chamber,—transfer of the H2 formed to the fuel cell. The invention also relates to a hydrogen generator for fuel cells based on silanes.

Abstract: Compounds are provided comprising at least one neutral, positive, or negative hydrogen species having a binding energy greater than its corresponding ordinary hydrogen species, or greater than any hydrogen species for which the corresponding ordinary hydrogen species is unstable or is not observed. Compounds comprise at least one increased binding energy hydrogen species and at least one other atom, molecule, or ion other than an increased binding energy hydrogen species. One group of such compounds contains one or more increased binding energy hydrogen species selected from the group consisting of Hn, Hn?, and Hn+ where n is an integer from one to three.

Abstract: This invention relates to a highly stable silicon hydride (SiH(1/p)) surface coating formed from high binding energy hydride ions. SiH(1/p) may be synthesized in a cell for the catalysis of atomic hydrogen to form novel hydrogen species and/or compositions of matter containing new forms of hydrogen. The reaction may be maintained by a microwave plasma of a source of atomic hydrogen, a source of catalyst, and a source of silicon.

Abstract: A sodium, silicon and water composition characterized predominantly a by sodium to silicon ratio of less than 1.0 and an absence of significant metal hydride, the composition useful in a diluted product with approximately 100 parts de-ionized water, the product further useful in approximately 50/50 ratio with an amine in a gas treatment facility and as an additive to fuel, the invention including the process of making the concentrate and the concentrate defined by process as well as a process of making the diluted product and an amine combination.

Abstract: Methods for the production of trisilane from the pyrolysis of disilane in a single reactor.

Abstract: A composition, and its manufacture, used to add supplemental materials to plants for the purpose of increasing or modifying growth or the composition of the plant. The composition comprises silicon, sodium hydroxide, water, and a humic acid and fulvic acid blend.

Abstract: A method of forming crystalline or polycrystalline layers includes providing a substrate and a patterning over the substrate. The method also includes providing nucleation material and forming the crystalline layer over the nucleation material. The crystalline material disposed over the substrate may be monocrystalline or polycrystalline.

Abstract: The invention relates to a method for producing trichlorosilane by reacting silicon with hydrogen, silicon tetrachloride and, optionally, hydrogen chloride, whereby the silicon is provided in comminuted form, and the silicon is mixed with a catalyst during comminution.

Abstract: Silane is produced in a continuous process by disproportionating trichlorsilane in at least 2 recreation areas for reaction/distillation, which are run through by a countercurrent of steam and liquid in the presence of catalytically active solid under a pressure which ranges between 500 mbar and 50 bar.

Abstract: This invention relates to a continuous process for the preparation of silane by catalytic disproportionation of trichlorosilane in a reactive/distillative reaction zone having a catalyst bed of catalytically active solid.

Abstract: An apparatus is provided for synthesis and collection of higher order chemical compounds from lower order precursors. The apparatus includes a first silent electric discharge reactor configured to synthesize an intermediate product (e.g., disilane) from a precursor chemical (e.g., monosilane). A second silent electric discharge reactor is connected downstream of the first reactor. This second reactor is configured to convert the intermediate product into the higher order chemical compound (e.g., trisilane). Multiple condensation traps are also connected to receive effluent from the second reactor, which will generally include the compound of interest as well as unreacted precursor and intermediate product. In the illustrated embodiment, a parallel second condensation traps is also included to shunt flow and continue collection while the chemical of interest is removed for purification.

Abstract: The invention relates to a method for producing silane (SiH4) by a) reacting metallurgical silicon with silicon tetrachloride (SiCl4) and hydrogen (H2), to form a crude gas stream containing trichlorosilane (SiHCl3) and silicon tetrachloride (SiCl4), b) removing impurities from the resulting crude gas stream by washing with condensed chlorosilanes, c) condensing and subsequently, separating the purified crude gas stream by distillation, d) returning the partial stream consisting essentially of SiCl4 to the reaction of metallurgical silicon with SiCl4 and H2, e) disproportionating the partial stream containing SiHCl3, to form SiCl4 and SiH4 and f) returning the SiH4 formed by disproportionation to the reaction of metallurgical silicon with SiCl4 and H2, the crude gas stream containing trichlorosilane and silicon tetrachloride being liberated from solids as far as possible by gas filtration before being washed with the condensed chlorosilanes.

Abstract: Silane is produced in a continuous process by disproportionating trichlorsilane in at least 2 recreation areas for reaction/distillation, which are run through by a countercurrent of steam and liquid in the presence of catalytically active solid under a pressure which ranges between 500 mbar and 50 bar.

Abstract: Regenerable gas purifier materials are provided capable of reducing the level of contaminants such as oxygen and moisture in a hydride gas stream to parts-per-billion levels or sub-parts-per-billion levels. The purifier materials of this invention comprise a thin layer of one or more reduced forms of a metal oxide coated on the surface of a nonreactive substrate. The thin layer may further contain the completely reduced form of the metal. In one embodiment, the total surface area of the thin layer is less than 100 m2/g.

Abstract: A non-single crystalline semiconductor material includes coordinatively irregular structures characterized by distorted chemical bonding, reduced dimensionality and novel electronic properties. A process for forming the material permits variation of the size, concentration and spatial distribution of coordinatively irregular structures. The electronic properties of the material can be changed by controlling the characteristics of the coordinatively irregular structures.

Abstract: The invention relates to a method for producing silane (SiH4) by a) reacting metallurgical silicon with silicon tetrachloride (SiCl4) and hydrogen (H2), to form a crude gas stream containing trichlorosilane (SiHCl3) and silicon tetrachloride (SiCl4), b) removing impurities from the resulting crude gas stream by washing with condensed chlorosilanes, c) condensing and subsequently, separating the purified crude gas stream by distillation, d) returning the partial stream consisting essentially of SiCl4 to the reaction of metallurgical silicon with SiCl4 and H2, e) disproportionating the partial stream containing SiHCl3, to form SiCl4 and SiH4 and f) returning the SiH4 formed by disproportionation to the reaction of metallurgical silicon with SiCl4 and H2, the crude gas stream containing trichlorosilane and silicon tetrachloride being liberated from solids as far as possible by gas filtration before being washed with the condensed chlorosilanes.

Abstract: The invention relates to a method and a device for separating aluminium from chlorosilanes, in particular for separating aluminium trichloride from silicon tetrachloride or trichlorosilane or from mixtures of silicon tetrachloride or trichlorosilane. According to the invention, aluminium chloride is removed from the chlorosilanes silicon tetrachloride and trichlorosilane in a continuous process, without the addition of admixtures, to obtain a residual content of aluminium that is as low as required, by separating the aluminium trichloride and the chlorosilane by distillation, at a temperature approximately greater than 160° C.

Abstract: The invention relates to a method for producing trichlorosilane by reacting silicon with hydrogen, silicon tetrachloride and optionally, hydrogen chloride in the presence of a catalyst, this catalyst having an average grain size that is less than the average grain size of the silicon used by a factor of 30 to 100.

Abstract: BF3CO2 or both are removed from a mixture containing these gases with B2H6 by contacting the mixture with an inorganic hydroxide such as LiOH. B2H6 is synthesized by contacting BF3 with KBH4.

Abstract: This invention relates to a highly stable silicon hydride (SiH(1/p)) surface coating formed from high binding energy hydride ions. SiH(1/p) may be synthesized in a cell for the catalysis of atomic hydrogen to form novel hydrogen species and/or compositions of matter containing new forms of hydrogen. The reaction may be maintained by a microwave plasma of a source of atomic hydrogen, a source of catalyst, and a source of silicon.

Abstract: An apparatus is provided for synthesis and collection of higher order chemical compounds from lower order precursors. The apparatus includes a first silent electric discharge reactor configured to synthesize an intermediate product (e.g., disilane) from a precursor chemical (e.g., monosilane). A second silent electric discharge reactor is connected downstream of the first reactor. This second reactor is configured to convert the intermediate product into the higher order chemical compound (e.g., trisilane). Multiple condensation traps are also connected to receive effluent from the second reactor, which will generally include the compound of interest as well as unreacted precursor and intermediate product. In the illustrated embodiment, a parallel second condensation traps is also included to shunt flow and continue collection while the chemical of interest is removed for purification.

Abstract: Silylcyclopentasilane and a solution composition for forming a silicon film containing the same, which is used for forming a silicon film on the surface of a substrate. There is also disclosed spiro[4.4] nonasilane.

Abstract: Halogen-substituted silicon compounds are hydrogenated by reaction with hydrogen in a chloroaluminate salt melt as a reaction medium containing a finely divided metal capable of forming interstitial hydrides which are suspended in the melt, the finely divided interstitial metal hydrides being formed in situ in the melt by reduction of a metal halide with an electropositive element as a halogen acceptor I selected from the group consisting of magnesium, calcium and aluminum.

Abstract: Process for preparing trichlorosilane by reacting silicon with silicon tetrachloride, hydrogen and optionally hydrogen chloride using catalysts, where silicon is intensively mixed with the catalyst before the reaction.

Abstract: Phosphine, stilbene, and arsine are removed from silane to ultra-trace levels by passing raw silane gas through a bed of a transition element modified potassium zeolite adsorbent at a temperature above the critical temperature of silane and at a pressure of at least about 150 psi. This purification system can be incorporated into existing silane production plants to augment bulk purification methods. The system also can be located at a site where silane is to be used, to assure that delivered silane gas remains of superior quality.

Abstract: The present invention relates to methods of derivatizing semiconductor surfaces, particularly porous silicon surfaces with silicon-carbon units. The derivatization occurs through the direct addition of an organometallic reagent in the absence of an external energy source such as heat and photo- or electrochemical energies. The method of the invention allows the formation of unique intermediates including silicon hydride units bonded to metal ions. Because of these unique intermediates, it is possible to form previously inaccessible silicon-carbon units, for example where the carbon atom is an unsaturated carbon atom. Such inaccessible silicon-carbon units also include silicon-polymer covalent bond formation, in particular where the polymer is a conducting polymer. Thus, the present invention also provides a novel semiconductor surface/polymer junction having improved interfacial interactions.

Abstract: A method and apparatus is provided which continuously filters scrubbed gases prior to emission to the atmosphere. In particular, the method and apparatus can continuously scrub the effluent stream from a chemical vapor deposition process, such as the process used to deposit epitaxial silicon. In order to provide this continuous scrubbing, a separation housing having a filter housing is provided that permits the filter to be replaced during and without interruption of the scrubbing and filtering process. The filter housing can define a pair of tracks that guide the insertion and removal of a filter such that inserting a clean filter into one end of the pair of tracks causes a spent filter to be pushed out of the opposed end of the tracks as the clean filter is slid down the tracks.

Abstract: BF.sub.3, CO.sub.2 or both are removed from a mixture containing these gases with B.sub.2 H.sub.6 by contacting the mixture with an inorganic hydroxide such as LiOH. B.sub.2 H.sub.6 is synthesized by contacting BF.sub.3 with KBH.sub.4.