Abstract: A method for purifying silicon includes adding molten Na2CO3 to molten silicon to be purified in an amount of 10% by weight of silicon. After stirring for 10 minutes, a covering agent is placed on the surface of the mixture melt and sealed. The cooling rate of the silicon is decreased when the temperature is lowered to 1490-1510° C. Heating power is kept constant while the temperature is lowered to the melting point of silicon. Heating is stopped when silicon begins to cool down below the melting point, and solid state silicon is removed after reaching room temperature. The silicon is crushed at room temperature. A mixed acid solution is added and maintained for 12 hours in a fume hood. Silicon grains fragmented by leaching are separated from the acid solution and soaked upon adding water thereto, which are rinsed with water to neutrality and filtered and dried, yielding silicon with high purity.

Abstract: A silicon wafer in which both occurrences of slip dislocation and warpage are suppressed in device manufacturing processes is a silicon wafer having BMDs having an octahedral shape, wherein BMDs located at a position below the silicon wafer surface to a depth of 20 ?m and having a diagonal length of 200 nm or more are present at a concentration of ?2×109/cm3, and BMDs located at a position below a depth ?50 ?m have a diagonal length of ?10 nm to ?50 nm and a concentration of ?1×1012/cm3.

Abstract: Methods for preparing photoluminescent silicon nanoparticles and compositions of such silicon nanoparticles having unique properties are provided. Methods of preparation include the use of low pressure high frequency pulsed plasma reactors and direct fluid capture of the nanoparticles formed in the reactor.

Abstract: A process to the production of silicon from amorphous silica is disclosed. The amorphous silica is formed from a material rich in silica, especially rice husk ash or silica fume. The process comprises subjecting the amorphous silica to leaching with a lixiviant of aqueous mineral acid, especially hydrochloric acid. Preferably, material rich in silica is roasted at a temperature of not more than 850° C., subjected to leaching and then subjected to a second roasting at a temperature of less than 750° C. The process provides for the production of high purity silicon, especially to the production of solar grade silicon (SoG-Si).

Abstract: A method for refining aluminum-containing silicon is provided and includes heating an aluminum-containing silicon to form a molten aluminum-containing silicon, adding a source of calcium selected from the group consisting of calcium, calcium oxide, and calcium carbonate, and, optionally silica to the aluminum-containing silicon; and exposing the molten aluminum-containing silicon to oxygen to produce a refined silicon and a by-product slag such that the refined silicon contains an amount of aluminum less than the amount of aluminum in the aluminum-containing silicon.

Abstract: A polycrystalline silicon manufacturing apparatus efficiently produces high-quality polycrystalline silicon. There is provided a polycrystalline silicon manufacturing apparatus, in which a plurality of gas supplying ports 6A for ejecting raw gas upward in a reactor 1 and gas exhausting ports 7 for exhausting exhaust gas after a reaction are provided on an inner bottom of the reactor 1 in which a plurality of silicon seed rods 4 are stood, the silicon seed rods 4 are heated and the polycrystalline silicon is deposited from the raw gas on the surfaces.

Abstract: A method and apparatus for refining metallurgical silicon to produce solar grade silicon for use in photovoltaic cells. A crucible in a vacuum furnace receives a mixture of metallurgical silicon and a reducing agent such as calcium disilicide. The mix is melted in non-oxidizing conditions within the furnace under an argon partial pressure. After melting, the argon partial pressure is decreased to produce boiling and the process ends with directional solidification. The process reduces impurities, such as phosphorus, to a level compatible with solar-grade silicon and reduces other impurities significantly.

Abstract: A Czochralski growth system is disclosed comprising a crucible, a silicon delivery system comprising a feeder having a delivery point overhanging the crucible and delivering a controllable amount of silicon into the crucible, and at least one doping mechanism controllably delivering at least one dopant material to the feeder. The system can comprise two or more doping mechanisms each loaded with a different dopant material and can therefore be used to prepare silicon ingots having multiple dopants. The resulting ingots have substantially constant dopant concentrations along their axes. Also disclosed is a method of Czochralski growth of at least one silicon ingot comprising at least one dopant material, which is preferably a continuous Czochralski method.

Abstract: The present invention relates to new compositions of matter, particularly metals and alloys, and methods of making such compositions. The new compositions of matter exhibit long-range ordering and unique electronic character.

Abstract: In a device and a method for the processing of non-ferrous metals for simple and economic reduction of the concentration of impurity elements and/or impurity compounds contained in the non-ferrous metal, it is provided to gas the non-ferrous metal in a processing column with at least one gas at a low pressure, causing the impurity elements and/or impurity compounds to evaporate.

Abstract: Chemical processes and reactors for efficiently producing hydrogen fuels and structural materials and associated systems and methods. A representative process includes dissociating a hydrogen donor into dissociation products by adding energy to the hydrogen donor, wherein the energy includes waste heat generated by a process other than dissociating the hydrogen donor. The process can further include providing, from the dissociation products, a structural building block and/or a hydrogen-based fuel, with the structural building block based on carbon, nitrogen, boron, silicon, sulfur, and/or a transition metal.

Abstract: The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.

Abstract: Various embodiments of a method for producing a crystalline material in a crucible in a crystal growth apparatus are disclosed. The method comprises, in part, the step of monitoring for remaining solid feedstock in a liquid feedstock melt with an automated vision system positioned above the crucible. Alternatively, or in addition, the method comprises the step of monitoring for solidified crystalline material in a partially solidified melt with the automated vision system. A crystal growth apparatus comprising the automated vision system is also disclosed.

Abstract: The invention provides for a nanostructured silicon or holey silicon (HS) that has useful thermoelectric properties. The invention also provides for a device comprising the nanostructured silicon or HS. The HS can be placed between two electrodes and used for thermoelectric power generation or thermoelectric cooling.

Abstract: The invention provides a process for producing nonpassivated silicon, which process comprises providing a sample of silicon and, under inert conditions, reducing the mean particle size in the sample by applying a mechanical force to the sample. The invention also provides nonpassivated silicon which is obtainable by such a process, and compositions which comprise the nonpassivated silicon. Further provided is a process for producing hydrogen, which process comprises contacting water with nonpassivated silicon, thereby producing hydrogen by hydrolysis of said silicon. The invention also provides a pellet for generating hydrogen, the pellet comprising nonpassivated silicon encapsulated within an organic coating.

Abstract: A method includes transferring a raw silicon material in a crucible and subjecting the raw silicon material in the crucible to thermal energy to form a melted silicon material at a temperature of less than 1400 Degrees Celsius, the melted silicon material having an exposed region bounded by an interior region of the crucible, subjecting an exposed inner region of the melted silicon material to an energy source to include an arc heater configured above the exposed region and to be spaced by a gap between the exposed region and a muzzle region of the arc heater to form a determined temperature profile within a vicinity of an inner region of the exposed melted silicon material while maintaining outer regions of the melted silicon material at a temperature below a melting point of the crucible, and removing impurities from the melted silicon material to form higher purity silicon.

Abstract: An isostatic pressing method for applying silicon powder as an original raw material for silicon crystal growth includes pressing silicon powder having a particle size of 0.1 to 1,000 micrometers into a silicon brick employing cold or hot isostatic pressing to provide a pressed silicon brick; and charging the pressed silicon brick into a furnace for silicon crystal growth. The furnace for silicon crystal growth may be a mono-crystal furnace for growing monocrystalline silicon or a multi-crystal furnace for growing polycrystalline silicon.

Abstract: A polycrystal silicon manufacturing apparatus and a method of manufacturing polycrystal silicon using the same are disclosed. The polycrystal silicon manufacturing apparatus includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas to the silicon particles provided in the reaction pipe; and a first pressure sensor configured to measure a pressure of a first area in the reaction pipe; a second pressure sensor configured to measure a pressure of a second area in the reaction pipe; and a particle outlet configured to exhaust polycrystal silicon formed in the reaction pipe outside, when a difference between a first pressure measured by the first pressure sensor and a second pressure measured by the second pressure sensor is a reference pressure value or more.

Abstract: The present invention relates to a method of purifying a material using a metallic solvent. The present invention includes a method of purifying silicon utilizing a cascade process. In a cascade process, as the silicon moves through the purification process, it contacts increasingly pure solvent metal that is moving through the process in an opposite direction.

Abstract: A polysilicon system comprises polysilicon in at least three form-factors, or shapes, providing for an enhanced loading efficiency of a mold or crucible. The system is used in processes to manufacture multi-crystalline or single crystal silicon.

Abstract: The present invention provides a process for preparing a polycrystalline silicon having the surface layer in which the areas having a short carrier lifetime due to Fe has been substantially eliminated. A preparation method of polycrystalline silicon comprising preparing a mold evenly applied with a mold release agent produced by mixing a binder and a solvent with a silicon nitride powder and then solidifying a molten silicon in said mold, wherein x?5.0, 20?y?100 and x×y?100 are satisfied given that x represents a concentration of Fe (atomic ppm) contained as impurity in the silicon nitride powder and y represents a thickness of the mold release agent (?m) applied to the mold.

Abstract: The present invention provides a method of purifying a material using a cascading dissolution and washing process. The dissolution and washing processes can contain single or multiple stages. Water and dissolving chemicals are recycled through the process towards the beginning of the process.

Abstract: Systems and methods and resulting compositions of matter including silicon solids from a mixture of silicon and water. The mixture is collected at a collection stage from at least one wafer abrasion process performed on a silicon surface having an impurity concentration ?0.1 ppb and extracting one portion of the water from the mixture using at least one dryer stage to form a dry cake. The dry cake includes at least 99.99% silicon by weight excluding water and non-silicon species, where a concentration of water in the dry cake is between 0.05% and 1% by weight, and where a concentration of non-silicon species in the dry cake is between 0.05% and 1% by weight.

Abstract: The present invention aims at providing a silicon electromagnetic casting apparatus which can prevent the outward deflection of a crucible 200 used in the apparatus. This apparatus has a reaction vessel 100, the conductive crucible 200 installed in the reaction vessel 100 and an induction coil 300 installed on the outer circumference of the crucible 200, wherein constant pressure is maintained in the reaction vessel 100 using a prescribed gas and the silicon inside the crucible 200 is solidified after melting it by induction heating by applying voltage on the induction coil 300. In the apparatus, a hard structure 810 made from electrical insulating material is fitted onto the outer peripheral surface of the crucible 200.

Abstract: Provided are a silicon film which can give an electrode suitable for use in high-capacity lithium secondary batteries, and a process for easily producing the silicon film. The silicon film comprises a columnar aggregate which is an aggregate of columnar structures made of Si or a Si compound. The silicon film may be a film wherein the diameter of the columnar structures is from 10 nm to 100 nm and the film thickness is from 0.2 ?m to 100 ?m. In the process for preparing a silicon film on a substrate by vapor deposition using a vapor deposition source made of Si or a Si compound, the temperature of the vapor deposition source is 1700 K or higher, the temperature of the substrate is lower than that of the vapor deposition source, and the temperature difference between the vapor deposition source and the substrate is 700 K or larger.

Abstract: An method for manufacturing a high purity polycrystalline silicon is characterized by comprising: supplying a silicon chloride gas from a silicon chloride gas supply nozzle and a zinc gas from a zinc gas supply nozzle into a vertical reactor, and generating downward a polycrystalline silicon agglomerated in an almost tube shape on the leading end part of the silicon chloride gas supply nozzle by the reaction of the silicon chloride gas and the zinc gas.

Abstract: Embodiments of the present invention relate to a process for obtaining silicon crystals from silicon. The method includes contacting silicon powder with a solvent metal to provide a mixture containing silicon, melting the silicon under submersion to provide a first molten liquid, contacting the first molten liquid with a first gas to provide dross and a second molten liquid, separating the dross and the second molten liquid, cooling the second molten liquid to form first silicon crystals and a first mother liquid and separating the first silicon crystals and the first mother liquid.

Abstract: This invention aims at providing a silicon electromagnetic casting apparatus for accurate and easy manufacturing of high quality silicon ingots. This apparatus uses a furnace vessel 100, a conductive crucible 200 installed in the internal part of the furnace vessel 100 and an induction coil 300 installed on the outer circumference of the crucible 200. Constant pressure is maintained in the internal part of the furnace vessel 100 using a prescribed gas and the silicon inside the above mentioned crucible 200 is solidified after melting it by induction heating by applying voltage on the induction coil 300. The induction coil 300 is made by placing 2 induction coils 310 and 320 having different induction frequencies one above the other.

Abstract: Methods for orienting a plurality of sliver structures include applying at least one directional force to a group of sliver structures each having an orientation material applied to an edge to cause the plurality of sliver structures to orient in a common direction. The method may also include capturing the oriented sliver structures in a capture device to maintain the orientation of the sliver structures in the common direction. The oriented sliver structures may be used to form sub-assemblies such as solar array sub-assemblies that are used to generate solar power. Methods of applying an orientation material to sliver structures and resulting sliver structures are also disclosed.

Abstract: An implementation of a Czochralski-type crystal growth has been shown and embodied. More particularly, a furnace with suitable insulation and flow arrangement is shown to improve the cost-efficiency of production of crystals. That is achieved by the shown new hot-zone structure, gas flows and the growth process which can decrease the power consumption, increase the lifetime of hot-zone parts and improve the productivity, e.g., by giving means for opening the hot-zone and easily adapting the hot-zone to a new crystal diameter.

Abstract: A method for improving yield of an upgraded metallurgical-grade (UMG) silicon purification process is disclosed. In the UMG silicon (UMGSi) purification process, in a reaction chamber, purification is performed on a silicon melt therein by one, all or a plurality of the following techniques in the same apparatus at the same time, including: a crucible ratio approach, the addition of water-soluble substances, the control of power, the control of vacuum pressure, the upward venting of exhaust, isolation by high-pressure gas jet, and carbon removal by sandblasting, thereby reducing oxygen, carbon and other impurities in the silicon melt, meeting a high-purity silicon standard of solar cells, increasing yield while maintaining low cost, and avoiding EMF reduction over time. An exhaust venting device for purification processes is also disclosed, which allows exhaust to be vented from the top of the reactor chamber, thereby avoiding backflow of exhaust into the silicon melt and erosion of the reactor.

Abstract: The present invention provides a method for forming high quality silicon material, e.g., polysilicon. The method includes transferring a raw silicon material in a crucible having an interior region. The crucible is made of a quartz or other suitable material, which is capable of withstanding a temperature of at least 1400 Degrees Celsius. The method includes subjecting the raw silicon material in the crucible to thermal energy to cause the raw silicon material to be melted into a liquid state to form a melted material at a temperature of less than about 1400 Degrees Celsius. Preferably, the melted material has an exposed region bounded by the interior region of the crucible.

Abstract: Embodiments of the invention provide, among other things, a method of preparing nanoparticles including silicon nanoparticles. A mixture is prepared that includes auric acid (HAuCl4) and HF. A silicon substrate is exposed to the prepared mixture to treat the silicon substrate. The treated silicon substrate is immersed in an etchant mixture, wherein nanoparticles are formed on a surface of the substrate. The nanoparticles are recovered from the substrate.

Abstract: The present disclosure generally relates to methods for recovering silicon from saw kerf, or an exhausted abrasive slurry, resulting from the cutting of a silicon ingot, such as a single crystal or polycrystalline silicon ingot. More particularly, the present disclosure relates to methods for isolating and purifying silicon from saw kerf or the exhausted slurry, such that the resulting silicon may be used as a raw material, such as a solar grade silicon raw material.

Abstract: It is possible to provide a silicon wafer that as well as being free of COPs and dislocation clusters, has defects (grown-in defects including silicon oxides), which are not overt in an as-grown state, such as OSF nuclei and oxygen precipitate nuclei existing in the PV region, to be vanished or reduced, by adopting a method for producing a silicon wafer, the method comprising the steps of: growing a single crystal silicon ingot by the Czochralski method; cutting a silicon wafer out of the ingot; subjecting the wafer to an RTP at 1,250° C. or more for 10 seconds or more in an oxidizing atmosphere; and removing a grown-in defect region including silicon oxides in the vicinity of wafer surface layer after the RTP.

Abstract: The invention concern an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention feeds Ar gas in a trichlorosilane line, which connects a trichlorosilane (TCS) tank and a series of distillation units. The distillation units have a pressure transducer and a pressure independent control valve (PIC-V) positioned on a vent gas line for discharging vent gas from the distillation units. Ar gas is fed to the TCS line with higher pressure than the pressure set for opening the PIC-V. The TCS is distilled by the distillation units with continuously discharging vent gas from the distillation units.

Abstract: Method for producing a silicon ingot, comprising the following steps: providing a container to receive a silicon melt, providing a temperature control device to control the temperature of the silicon melt in the container, arranging raw material in the container comprising silicon and at least one nucleation agent to assist a heterogeneous nucleation in the silicon melt, and control of the temperature in the container for the directed solidification of the silicon melt , the nucleation agent comprising nanoscale particles.

Abstract: The invention concern an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention feeds Ar gas in a trichlorosilane line, which connects a trichlorosilane (TCS) tank and a series of distillation units. The distillation units have a pressure transducer and a pressure independent control valve (PIC-V) positioned on a vent gas line for discharging vent gas from the distillation units. Ar gas is fed to the TCS line with higher pressure than the pressure set for opening the PIC-V. The TCS is distilled by the distillation units with continuously discharging vent gas from the distillation units.

Abstract: The present invention provides a method of purifying a material using a cascading dissolution and washing process. The dissolution and washing processes can contain single or multiple stages. Water and dissolving chemicals are recycled through the process towards the beginning of the process.

Abstract: Device structure that facilitates high rate plasma deposition of thin film photovoltaic materials at microwave frequencies. The device structure includes a primer layer that shields the substrate and underlying layers of the device structure during deposition of layers requiring aggressive, highly reactive deposition conditions. The primer layer prevents or inhibits etching or other modification of the substrate or underlying layers by highly reactive deposition conditions. The primer layer also reduces contamination of subsequent layers of the device structure by preventing or inhibiting release of elements from the substrate or underlying layers into the deposition environment. The presence of the primer layer extends the range of deposition conditions available for forming photovoltaic or semiconducting materials without compromising performance. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors from fluorinated precursors in a microwave plasma process.

Abstract: Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.

Abstract: This invention relates to a process for reducing impurities, such as contaminants in silicon suitable for use in solar cells or solar modules. The process includes the step of melting a feedstock with impurities and the step of adding an impurity-removing agent to the feedstock. The process also includes the step of reacting the impurities with the impurity-removing agent to form a high-temperature solid, and the step of separating the high-temperature solid from the feedstock.

Abstract: A method for the purification of metallurgical grade silicon is provided, which can be used to produce high purity silicon up to and including solar grade. The process relies on alloying and controlled solidification of Si with another metal, such as copper, zinc, iron, tin, nickel and aluminum, to produce purified platelets of Si, while the impurities are trapped in a getter alloy. The Si platelets are then separated from the solidified alloy by a physical separation technique such as gravity or magnetic separation. The separated grains of Si may then be further cleaned by acid leaching. Pre-refining of metallurgical grade silicon or post-refining of the product may be performed, depending on the initial impurity content of the feedstock, to obtain Si that meets solar grade requirements.

Abstract: A water-soluble cutting fluid for slicing silicon ingots is characterized in that it includes a monoprotic or diprotic aliphatic carboxylic acid (A) having a carbon number (including the carbon in the carbonyl group) of 4˜10, and either a polyprotic organic acid (B) with ?pKa of 0.9˜2.3 as defined by the following formula (1) or a salt (BA) of said organic acid (B) as essential components: ?pKa=(pKa2)?(pKa1) ??(1) wherein the dissociation stage, at which the organic acid (B) denoted as n-protic acid HnA, becomes Hn-1A+H+ is numbered 1 with an acid dissociation constant expressed as pKa1, and the dissociation stage at which the organic acid (B) becomes Hn-2A+H+ is numbered as 2 with an acid dissociation constant expressed as pKa2.

Abstract: The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.

Abstract: Dermatological methods of cosmetic, therapeutic, prophylactic, and/or diagnostic treatment by topically applying compositions comprising a multiplicity of particles, at least one of the particles comprising porous and/or polycrystalline silicon. Included are methods and compositions for sun protection applications. The use of porous silicon, polycrystalline silicon, and porous silicon oxide mirrors is disclosed.

Abstract: Provided is a process for producing a boron added silicon (purified silicon) in an energy saving mode from a reduced silicon obtained by reducing a silicon halide with a metal aluminium. The production process of the invention comprises reducing a silicon halide with a metal aluminium to give a reduces silicon, heating and melting the resulting reduced silicon, and adding boron thereto followed by solidification for purification under the condition of a temperature gradient provided in one direction in a mold. Preferably, after washed with an acid, the reduced silicon is heated and molten, and boron is added thereto. After the reduced silicon is heated and molten under reduced pressure, boron is added thereto. After heated and molten, the reduced silicon is purified by solidification in one direction, then heated and molten, and thereafter boron is added thereto.

Abstract: A method is provided for producing a Si bulk polycrystal ingot with high quality and high homogeneity, which has no significant crystal defects and is free from diffused impurities with a high yield. An upper face of a Si melt is locally cooled by bringing coolant close to a surface of the Si melt from an upper part of a crucible in the crucible containing the Si melt or by inserting the coolant into the Si melt. A dendrite crystal is formed in the vicinity of the surface of the Si melt. Cooling is performed thereafter while maintaining a proper temperature distribution, and a Si bulk crystal is grown from an upper part toward a lower part using a lower face of the dendrite crystal as a fresh growth face.

Abstract: A method of forming a silicon anode material for rechargeable cells includes providing a metal matrix that includes no more than 30 wt % of silicon, including silicon structures dispersed therein. The metal matrix is at least partially etched to at least partially isolate the silicon structures.

Abstract: The present invention provides a method for producing polycrystalline silicon. The method for producing polycrystalline silicon comprises the steps of (A), (B), and (C), (A) reducing a chlorosilane represented by the formula (1) with a metal at a temperature T1 to obtain a silicon compound; SiHnCl4-n??(1) ?wherein n is an integer of 0 to 3, (B) transferring the silicon compound to a zone having a temperature T2, wherein T1>T2; and (C) depositing polycrystalline silicon in the zone having a temperature T2, wherein the temperature T1 is not less than 1.29 times of a melting point (Kelvin unit) of the metal, and the temperature T2 is higher than a sublimation point or boiling point of the chloride of the metal.