Abstract: Piezoelectric deposition for BAW resonators wherein a thin amorphous layer of AlN over the bottom electrode before depositing a second layer of AlN over the amorphous layer of AlN, the depositing occurring at a temperature allowing the deposited AlN to self-organize into a desired columnar phase. The bottom electrode may have acoustic isolation thereunder, such as a Bragg mirror. Various details of the fabrication process are disclosed.

Abstract: According to an exemplary embodiment, a method of forming a multi-layer electrode for growing a piezoelectric layer thereon includes a step of forming a high conductivity metal layer over a substrate. The method further includes a step of forming a seed layer over the high conductivity metal layer. The method further includes a step of forming a high density metal layer over the seed layer. The method further includes a step of forming a piezoelectric layer over the high density metal layer. The high conductivity metal layer, the seed layer, and the high density metal layer form the multi-layer electrode on which the piezoelectric layer is grown.

Abstract: Disclosed is a microelectromechanical system (MEMS) device and method of manufacturing the same. In one aspect, MEMS such as an interferometric modulator include one or more elongated interior posts and support rails supporting a deformable reflective layer, where the elongated interior posts are entirely within an interferometric cavity and aligned parallel with the support rails. In another aspect, the interferometric modulator includes one or more elongated etch release holes formed in the deformable reflective layer and aligned parallel with channels formed in the deformable reflective layer defining parallel strips of the deformable reflective layer.

Abstract: Disclosed is a liquid ejecting recording head with improved operational reliability. A first coating resin layer of a liquid ejecting recording head, having a liquid flow duct and a liquid ejecting orifice, is formed of an oxetane resin composition that contains, as necessary components, an oxetane compound having at least one oxetanyl group in a molecule, and a cationic photopolymerization initiator.

Abstract: A piezoelectric thin film of the present invention includes an aluminum nitride thin film that contains scandium. A content ratio of scandium in the aluminum nitride thin film is 0.5 atom % to 50 atom % on the assumption that a total amount of the number of scandium atoms and the number of aluminum atoms is 100 atom %. According to this arrangement, the piezoelectric thin film of the present invention can improve a piezoelectric response while keeping characteristics of elastic wave propagation speed, Q value, and frequency-temperature coefficient that the aluminum nitride thin film has.

Abstract: In accordance with the invention, there are free-standing ductile composites, liquid dispensing devices, and methods of making free-standing ductile composites, liquid dispensing devices. The method of making a free-standing ductile composite can include providing a substrate and releasably bonding one or more piezoelectric elements to the substrate. The method can also include kerfing the piezoelectric elements in a predetermined pattern to form a kerfed pattern, filling the kerfed pattern with a polymer to form a polymer-piezoelectric composite, and lapping the polymer-piezoelectric composite. The method can further include releasing the polymer-piezoelectric composite from the substrate.

Abstract: A variable shape mirror includes a support substrate provided with a conductive bonding portion that is divided into two areas bonded to a lamination type piezoelectric actuator. A bonding surface of the piezoelectric actuator is provided with a first metal film that is divided into a first area and a second area that are not connected to each other electrically. Side faces of the piezoelectric actuator are provided with a second metal film that connects a first common electrode to the first area electrically or connects a second common electrode to the second area electrically. The piezoelectric actuator is disposed on the bonding portion so that the individual areas of the first metal film are connected electrically to the different areas of the bonding portion, respectively.

Abstract: Techniques for fabricating high frequency ultrasound transducers are provided herein. In one embodiment, the fabrication includes depositing a copperclad polyimide film, a layer of epoxy on the copperclad polyimide film, and a polyvinylidene fluoride film on the epoxy. The assembly of materials are then pressed to bond the polyvinylidene fluoride film to the copperclad polyimide film and to form an assembly. The polyvinylidene fluoride film being one surface and the copperclad polyimide film being the other surface. The area behind the copperclad polyimide film surface is filled with a second epoxy, and then cured to form an epoxy plug.

Abstract: The design and synthesis of a matrix nanocomposite containing amino carbon nanotubes used as a functionalized sensing layer for carbon dioxide detection by means acoustic wave sensing devices, e.g., SAW/BAW devices. These sensing materials contain a type of amino carbon nanotubes (single walled or multi-walled) and a polymer (or other compounds) which are sensitive to carbon dioxide in the acoustic wave sensing device based gas sensors. The sensitivity of the matrix consisting of the amino carbon nanotubes and a polymer (or other compounds) is ensured by the presence of amino groups which can react at room temperature with CO2 in a reversible process to form carbamates.

Abstract: In a piezoelectric element having a substrate, a lower electrode layered on the substrate, a piezoelectric body made of ceramic layered on top of the lower electrode and an upper electrode layered on the piezoelectric body, wherein a first metal layer is provided between the substrate and the lower electrode, a second metal layer is provided between the lower electrode and the piezoelectric body, and the first metal layer and the second metal layer are made of a metal selected from among metals of which the ionization tendency is not less than that of Cu, oxides of metals of which the ionization tendency is not less than that of Cu, and alloys of metals of which the ionization tendency is not less than that of Cu.

Abstract: An inorganic film formed of an inorganic material on a metal film having a surface including surface-oxidized areas. The surface-oxidized areas are surface oxidized to different degrees. For example, the surface-oxidized areas are one or more lowly-surface-oxidized areas and one or more highly-surface-oxidized areas. The inorganic film includes regions which are respectively formed on the surface-oxidized areas, and the regions have different crystal structures according to the different degrees of surface oxidation. For example, a patterned inorganic film constituted by one or more protruding portions arranged on one or more lowly-surface-oxidized areas of the surface of the metal film can be produced by removing the portions of the inorganic film formed on highly-surface-oxidized areas.

Abstract: The method of manufacturing a piezoelectric element includes: a lower electrode forming step of forming a lower electrode on a surface of a substrate; a piezoelectric film deposition step of depositing a piezoelectric film made of a piezoelectric material by one of epitaxial growth and oriented growth onto a surface of the lower electrode reverse to a surface adjacent to the substrate; an upper electrode forming step of forming an upper electrode onto a surface of the piezoelectric film reverse to a surface adjacent to the lower electrode; and a polarization direction reversal step of reversing a polarization direction of the piezoelectric film by maintaining, after the upper electrode forming step, a state for a prescribed duration where a temperature of the piezoelectric film is set to a first temperature while application of an electric field to the piezoelectric film in a direction from the upper electrode toward the lower electrode is performed, then keeping the application of the electric field while lo

Abstract: A method for producing a piezoelectric actuator includes forming a diffusion preventing layer on one surface of a substrate formed of a metallic material for preventing a diffusion of a metal from the substrate, heating a diffusion preventing layer at a first temperature in order to relieve a residual stress in the diffusion preventing layer, forming an electrode on a surface of the diffusion preventing layer, the surface not facing the substrate, forming a piezoelectric layer of a piezoelectric material on a surface of the electrode, the surface not facing the diffusion preventing layer, and annealing the piezoelectric layer at a second temperature. Accordingly, it is possible to prevent the electrode from being exfoliated from the diffusion preventing layer. Moreover, it is possible to prevent a crack being developed in the piezoelectric layer.

Abstract: A method for manufacturing piezoelectric actuator which includes a piezoelectric layer formed of a piezoelectric ceramics material and having a drive area, a first electrode and a second electrode arranged on both surfaces of the piezoelectric material layer respectively each at portion corresponding to the drive area, and a ceramics layer formed of a ceramics material and stacked to face the surface of the piezoelectric material layer on which the first electrode is arranged, the method including: forming a stacked body which includes the piezoelectric material layer, the ceramics layer, and the first electrode, and sintering the stacked body; forming the second electrode on the other surface, of the piezoelectric material layer after the sintering, not facing the ceramics layer; and forming elastic layers having a lower coefficient of elasticity than that of the piezoelectric material layer on both surfaces respectively of the stacked body after the sintering.

Abstract: A piezoelectric element includes: a base substrate; a lower electrode provided on the base substrate; a piezoelectric layer provided on the lower electrode; an upper electrode provided on the piezoelectric layer; and a protection layer that covers a side surface of the piezoelectric layer, wherein the protection layer is formed from polymeric material.

Abstract: The method of manufacturing a piezoelectric element includes the steps of: a lower electrode forming step of forming a lower electrode on a surface of a substrate; a piezoelectric film deposition step of depositing a piezoelectric film made of a piezoelectric material by one of epitaxial growth and oriented growth onto a surface of the lower electrode reverse to a surface adjacent to the substrate; an upper electrode forming step of forming an upper electrode onto a surface of the piezoelectric film reverse to a surface adjacent to the lower electrode; and a polarization direction reversal step of reversing a polarization direction of the piezoelectric film by applying an alternating electric field of an intensity not lower than a coercive electric field of the piezoelectric material, between the upper electrode and the lower electrode, and then applying a direct electric field of an intensity not lower than the coercive electric field in a direction from the upper electrode toward the lower electrode.

Abstract: The design and deposition of a sensing layer for room temperature SAW/BAW chemical sensors utilizing macrocyclic compounds in accordance with supra-molecular chemistry principles. The gas to be sensed is attached to the organic sensing film thus changing its visco-elastic properties and creating a mass increase of the film deposited on the surface of SAW/BAW devices. A direct printing method can be used as an additive, mask-less procedure to deposit metallic interdigital transducers and electrodes required for SAW/BAW devices, along with the deposition of a guiding layer and the organic films only on the location required by the sensing SAW/BAW principle of the sensor. Different thermal treatment solutions can be used for the consolidation of the gelly organic films deposited by the direct printing methods.

Abstract: There is disclosed a piezoelectric thin film having less non-uniform portion and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1-x)Lax(ZryTi1-y)O3 (where 0?x<1, 0.05?y?1), a film thickness of the thin film is 1000 nm or more and 4000 nm or less, and a difference between a maximum value and a minimum value of y in an arbitrary portion of the thin film is 0.05 or less.

Abstract: The piezoelectric actuator comprises: a substrate; a constraint force buffering layer which is formed on the substrate and made of a hardness control material having low hardness; and a piezoelectric element which is formed directly on the constraint force buffering layer.

Abstract: Disclosed are a piezoelectric element, which has a high withstand voltage and a longer durability life, a manufacturing method of the piezoelectric element, a liquid-jet head, a manufacturing method of the liquid-jet head, and a liquid-jet apparatus. The manufacturing method of a piezoelectric element includes the steps of: forming a piezoelectric layer by forming, on the lower electrode, a piezoelectric precursor film in which Pb, Zr and Ti are contained and the composition ratio of Pb, Zr and Ti becomes Pb/(Zr+Ti)=1.0 to 1.3 after the piezoelectric precursor film has been baked, and to which at least any one dopant selected from the group consisting of manganese, nickel and strontium is doped, and by then baking the piezoelectric precursor film for half an hour to three hours at 650 to 750° C.; and forming an upper electrode on the piezoelectric layer.

Abstract: One objective of the invention is to provide a highly-efficient and reliable piezoelectric thin film device by improving the piezoelectric function of a piezoelectric thin film and obtaining a crystal structure wherein the dependency of a piezoelectric constant, relative to a voltage, is superior, and to also provide a method for manufacturing this piezoelectric thin film device. Another objective of the invention is to provide an inkjet head that satisfactorily exhibits the piezoelectric performance of the piezoelectric thin film device and that has a superior withstand voltage function and driving reliability, and to provide a high quality inkjet recording apparatus on which this inkjet head can be mounted. A piezoelectric thin film device includes: crystal grains that form piezoelectric thin film and grain boundaries that encircle the crystal grains, wherein the same crystal orientation is established for the grain boundaries and the crystal grains.

Abstract: A method of manufacturing a dielectric film includes a coating step of coating sol made of an organic metal compound and forming a dielectric precursor film, a drying step of drying the dielectric precursor film, a degreasing step of degreasing the dielectric precursor film, and a baking step of baking the dielectric precursor film to form a dielectric film. The drying step includes a first drying step of drying the dielectric precursor film by heating the dielectric precursor film to a temperature lower than a boiling point of a solvent which is a main solvent of the sol and then holding the dielectric precursor film at the temperature for a predetermined period of time, and a second drying step of drying the dielectric precursor film further by reheating the dielectric precursor film and then holding the dielectric precursor film at the temperature for a predetermined period of time.

Abstract: A recess is formed on an upper surface of a vibration plate at a position corresponding to a pressure chamber. Next, a low-elasticity material having a lower modulus of elasticity than the vibration plate is filled in the recess. Then, aerosol including a piezoelectric material particles and carrier gas is sprayed on the upper surface of the vibration plate to form a piezoelectric layer. At this time, the particles of the piezoelectric material do not adhere to a surface of the low-elasticity material filled in the recess, and hence the piezoelectric layer can be formed only in an area excluding the surface of the low-elasticity material. Thus, there is provided a method of manufacturing a piezoelectric actuator, the method capable of easily preventing, when forming the piezoelectric layer by an aerosol deposition method, formation of the piezoelectric layer on a surface of the recess.

Abstract: The invention concerns a method for preparing a material based on piezoelectric ceramic oxide(s) comprising the following steps: a) wet deposition on at least one surface of a substrate of a layer of a dispersion comprising a piezoelectric ceramic oxide powder and a piezoelectric ceramic oxide precursor sol-gel solution identical to or different from the piezoelectric oxide constituting the powder; b) repeating a) once or several times, so as to obtain a stack of at least two layers; c) heat-treating said layers so as to transform them into corresponding ceramics; d) wet-shrink impregnation of the stack obtained at c) with a sol-gel solution identical to the one used in step a); e) optionally repeating step d) once or several times; f) heat-treating said stack, so as to transform the sol-gel impregnating the stack into the corresponding piezoelectric ceramics.

Abstract: Disclosed are methods for producing a tuning-fork type crystal vibrating piece having neither a bump nor a groove at the root area of a pair of vibrating arms and for producing a crystal oscillation device. The method for producing a tuning-fork type crystal vibrating piece relates to a crystal tuning fork comprising a basal portion, a first vibrating arm, and a second vibrating arm, wherein both arms extend from the basal portion. The method for producing a crystal tuning fork comprises forming a first metallic film into a shape including the contours of the basal portion, the first vibrating arm and second vibrating arm on a first surface of a quartz wafer; and forming a second metallic film on the second surface opposite to the first surface of the quartz wafer into a shape covering at least a part of the basal portion between the first vibrating arm and second vibrating arm.

Abstract: Thin film ferroelectric capacitor composites exhibiting reduced leakage current and enhanced breakdown strength are prepared using sol-gel processing. The composite contains a buffer layer and at least one dielectric layer and is formed by depositing by sol-gel processing onto a substrate a composition containing a heterocyclic amide, such as polyvinylpyrrolidone.

Abstract: Thin film ferroelectric structures having a top thin film layer prepared from a precursor solution containing a polymeric heterocyclic amide, such as polyvinylpyrrolidone. The polymeric heterocyclic amide improves top contact adhesion.

Abstract: A piezoelectric element is disclosed, comprising at least two electrodes having therebetween a high-dielectric layer and a low-dielectric layer, wherein the high-dielectric layer is comprised of an organic material. An ultrasonic probe for transmitting and receiving ultrasonic waves is also disclosed, comprising the piezoelectric element.

Abstract: Disclosed is a method of producing a diffractive micromirror. More particularly, the present invention pertains to a method of producing a diffractive micromirror, in which a recess having a desired depth and width is precisely formed in a piezoelectric operation manner.

Abstract: There is disclosed a piezoelectric/electrostrictive porcelain composition capable of manufacturing, at a comparatively low sintering temperature, a piezoelectric/electrostrictive body which is dense and superior in crystallinity and which has satisfactory piezoelectric/electrostrictive characteristics so that deviation of the composition is not easily generated. The piezoelectric/electrostrictive porcelain composition contains as a major component a piezoelectric/electrostrictive porcelain composition component including a PbMg1/3Nb2/3O3—PbZrO3—PbTiO3 ternary solid solution system composition and NiO or including a Pb(Mg, Ni)1/3Nb2/3O3—PbZrO3—PbTiO3 ternary solid solution system composition, and further contains lead germanate.

Abstract: A surface acoustic wave device includes a piezoelectric substrate made of LiTaO3 or LiNbO3 having an electromechanical coefficient of about 15% or more, at least one electrode which is disposed on the piezoelectric substrate and which is a laminate film having a metal layer defining a primary metal layer primarily composed of a metal having a density higher than that of Al or an alloy of the metal and a metal layer which is laminated on the primary metal layer and which is composed of another metal, and a first SiO2 layer which is disposed in a remaining area other than that at which the at least one electrode is located and which has a thickness approximately equivalent to that of the electrode. In the surface acoustic wave device described above, the density of the electrode is at least about 1.5 times that of the first SiO2 layer.

Abstract: A method of manufacturing an acoustic wave device includes: forming a conductive pattern on a wafer made of a piezoelectric substrate having an acoustic wave element, the conductive pattern including a first conductive pattern, a second conductive pattern and a third conductive pattern, the first conductive pattern being continuously formed on a cutting region for individuating the wafer, the second conductive pattern being formed on an electrode region where a plated electrode is to be formed and being connected to the acoustic wave element, the third conductive pattern connecting the first conductive pattern and the second conductive pattern; forming an insulating layer on the wafer so as to have a opening on the second conductive pattern; forming the plated electrode on the second conductive pattern by providing an electrical current to the second conductive pattern via the first conductive pattern and the third conductive pattern; and cutting off and individuating the wafer along the cutting region.

Abstract: A method of forming a high density thick piezoelectric layer and a piezoelectric device the same. The method of forming the thick piezoelectric layer includes: forming a seed layer on a substrate by coating a sol including a piezoelectric material; primary heat-treating the seed layer; forming the thick piezoelectric layer by coating a paste that includes a piezoelectric material on the seed layer using a screen printing method; and secondary heat-treating the thick piezoelectric layer at a temperature higher than the primary heat-treating temperature. The piezoelectric material included in the sol has a composition identical or similar to the composition of the piezoelectric material included in the paste. The density of the thick piezoelectric layer is increased by particles of the piezoelectric material that penetrate into the thick piezoelectric layer from the seed layer in the secondary heat-treating, and thus, a high density thick piezoelectric layer can be formed.

Abstract: A method of manufacturing an actuator device includes forming a Zr layer on one surface of a substrate, forming a ZrO2 layer by oxidizing the Zr layer, forming a lower electrode on top of the ZrO2 layer, forming a piezoelectric layer on top of the lower electrode, and forming an upper electrode on top of the piezoelectric layer. In the method, in forming the Zr layer, the Zr layer is formed through crystal growth of Zr, and the Zr layer thus formed has special crystal regions that protrude from the opposite surface of the Zr layer from the substrate. Each special crystal region has a height of 10 to 100 nm and a diameter of 0.1 to 1 ?m when viewed from above, and the special crystal regions exist with a density of 1.0×106 to 1.0×103/cm2.

Abstract: Techniques for fabricating high frequency ultrasound transducers are provided herein. In one embodiment, the fabrication includes depositing a copperclad polyimide film, a layer of epoxy on the copperclad polyimide film, and a polyvinylidene fluoride film on the epoxy. The assembly of materials are then pressed to bond the polyvinylidene fluoride film to the copperclad polyimide film and to form an assembly. The polyvinylidene fluoride film being one surface and the copperclad polyimide film being the other surface. The area behind the copperclad polyimide film surface is filled with a second epoxy, and then cured to form an epoxy plug.

Abstract: Provided are a piezoelectric element, a method of manufacturing the same, and a liquid jet head, which can improve, and homogenize, characteristics of a piezoelectric layer. Included are: a step of forming a seed titanium layer interposed therebetween, the seed titanium layer being formed at a desired film thickness by applying by titanium (Ti), at least twice; and a step of forming a piezoelectric precursor film by applying a piezoelectric material on the seed titanium layer, thereafter crystallizing the piezoelectric precursor film by baking, and thereby forming the piezoelectric layer.

Abstract: A method for manufacturing a liquid jetting head includes manufacturing a piezoelectric element having consistently high piezoelectric characteristics that obtains a degree of orientation that is suitable for a piezoelectric thin film, that is stable, and that has good reproducibility. A Ti film is formed on a layered bottom electrode, piezoelectric material layers constituting a piezoelectric thin film are formed in a plurality of cycles of layer formation, and a top electrode is formed on the piezoelectric thin film to produce a piezoelectric element. When the piezoelectric material layers are formed, the annealing temperature of the first cycle of layer formation is set higher than the annealing temperature of the other cycles of layer formation. In addition, the annealing time of the first cycle of layer formation is made longer than the annealing time of the other cycles of layer formation.

Abstract: A step of forming a vibration plate includes a step of forming an insulation film in order to cause the surface roughness Ra of the insulation film to be in the range of 1 nm to 3 nm: the insulation film being made of zirconia which has been obtained by depositing a zirconium layer, and accordingly by the thermally oxidizing the zirconium layer at a predetermined temperature, and the insulation film constituting the uppermost surface of the vibration plate. In addition, a step of forming a piezoelectric elements includes: a step of applying titanium (Ti) onto a lower electrode by use of a sputtering method, and of forming a seed titanium layer thereon; and a step of forming a piezoelectric precursor film by applying a piezoelectric material onto the seed titanium layer, and of forming a piezoelectric layer by baking, and crystallizing, the piezoelectric precursor layer.

Abstract: A piezoelectric element comprises a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.

Abstract: An objective is to provide a method of forming a piezoelectric resin film produced at low cost, and specifically to provide the method in which a large-area piezoelectric resin film is produced at low cost, and at reduced investment in facilities. Disclosed is a method of forming a piezoelectric resin film possessing the steps of polymerizing a monomer at a temperature of 5-60° C. to obtain a resin having a polymerization degree of 4-300, and a polarity group possessing one bond selected from a urea bond, an ester bond, an amide bond and an imide bond, coating the resin onto a substrate; and further polymerizing the resin at 70-250° C. while conducting a poling treatment.

Abstract: A potassium niobate deposited body includes a substrate, an electrode layer formed above the substrate, and a potassium niobate layer formed above the electrode layer. The potassium niobate layer can include a domain that epitaxially grows in a (110) or (001) orientation, when a lattice constant of orthorhombic potassium niobate is 21/2 c<a<b, and a b-axis is a polarization axis.

Abstract: A method of isolating piezoelectric thin film acoustic resonator devices to prevent laterally propagating waves generated by the device from leaving the device and/or interfering with adjacent devices or systems. Specifically, this isolation technique involves the manipulation or isolation of the piezoelectric material layer between the acoustic resonator devices, in an effort to limit the amount of acoustic energy which propagates in a lateral direction away from the device. In one aspect, at least a portion of the piezoelectric material not involved in signal transmission by transduction between RF and acoustic energy is removed from the device. In another aspect, the growth a piezoelectric material is limited to certain regions during fabrication of the device. In a further aspect, the crystal orientation of the piezoelectric material is disrupted or altered during device fabrication so as to form regions having excellent piezoelectric properties and regions exhibiting poor piezoelectric characteristics.

Abstract: Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.

Abstract: A method is provided for manufacturing a piezoelectric/electrostrictive film device including a ceramic substrate and a piezoelectric/electrostrictive operation portion including a lower electrode, a piezoelectric/electrostrictive layer, and upper electrode stacked on the substrate. The piezoelectric/electrostrictive layer is formed to extend beyond at least one of electrodes to form projected portions at its ends.

Abstract: An air-gap type thin film bulk acoustic resonator (FBAR) and method for fabricating the same. Also disclosed are a filter and a duplexer employing the air-gap type FBAR. The air-gap type FBAR includes: a first substrate having a cavity part at a predetermined region on its upper surface; a dielectric film stacked on the upper part of the first substrate; a first air gap formed between the first substrate and the dielectric film; a stacked resonance part including a lower electrode/piezoelectric layer/upper electrode formed on the upper part of the dielectric film; a second substrate having a cavity part at a predetermined region on its lower surface and joined to the first substrate; and a second air gap formed between the stacked resonance part and the second substrate. A thin film of predetermined thickness made of a liquid crystal polymer (LCP) may be used as the dielectric film.

Abstract: A method for manufacturing a piezoelectric thin film component wherein a thin titanium film is deposited on a bottom metal layer such that parts of the thin titanium film remain on crystal grain boundaries of the bottom metal layer and form seed crystals. A polycrystalline piezoelectric thin film is formed on the bottom metal layer so that a pervoskite crystalline lattice is grown from the seed crystals.

Abstract: Heterolayered thin films having ferroelectric/piezoelectric layers of alternating crystal structures and methods of their preparation are provided. In the ferroelectric/piezoelectric thin film, a first layer has a rhombohedral crystal structure and a second layer adjacent the first layer has a tetragonal crystal structure. The layers have a (100) preferred orientation with ?-axis normal to the surface of the film. The first layer can be a Zr-rich lead ziroconate titanate layer (e.g., PbZr0.8Ti0.2O3) and the second layer can be a Ti-rich PZT layer (e.g., PbZr0.2Ti0.8O3). Heterolayered ferroelectric/piezoelectric thin film comprising a plurality of such first and second layers in alternating sequence exhibits particularly improved electrical properties.

Abstract: A method of forming a silicon nitride layer is provided. A deposition furnace having an outer tube, a wafer boat, a gas injector and a uniform gas injection apparatus is provided. The wafer boat is positioned within the outer tube for carrying a plurality of wafers. The gas injector is positioned between the outer tube and the wafer boat. Similarly, the uniform gas injection apparatus is positioned between the outer tube and the wafer boat. Gas injected into the uniform gas injection apparatus is uniformly distributed throughout the entire deposition furnace. To form a silicon nitride layer on each wafer, a silicon-containing gas is passed into the deposition furnace via the gas injector and a nitrogen-mixed carrier gas is passed into the deposition furnace via the uniform gas injection apparatus.

Abstract: In a surface acoustic wave device, electrode films constituting at least one IDT are disposed on a piezoelectric substrate, and an SiO2 film is arranged on the piezoelectric substrate so as to cover the electrode films. The film-thickness of the electrode films is in the range of about 1% to about 3% of the wavelength of an excited surface acoustic wave.

Abstract: A method for fabricating a piezoelectric macro-fiber composite actuator comprises making a piezoelectric fiber sheet by providing a plurality of wafers of piezoelectric material, bonding the wafers together with an adhesive material to form a stack of alternating layers of piezoelectric material and adhesive material, and cutting through the stack in a direction substantially parallel to the thickness of the stack and across the alternating layers of piezoelectric material and adhesive material to provide at least one piezoelectric fiber sheet having two sides comprising a plurality of piezoelectric fibers in juxtaposition to the adhesive material. The method further comprises bonding two electrically conductive films to the two sides of the piezoelectric fiber sheet. At least one conductive film has first and second conductive patterns formed thereon which are electrically isolated from one another and in electrical contact with the piezoelectric fiber sheet.