Boron And Carbon Containing Coating (e.g., Boron Carbide, Etc.) Patents (Class 427/249.5)
  • Patent number: 9142403
    Abstract: According to an embodiment of the present disclosure a method of forming a boron-containing silicon oxycarbonitride film on a base is provided. The method includes forming a boron-containing film on the base, and forming the boron-containing silicon oxycarbonitride film by laminating a silicon carbonitride film and a silicon oxynitride film on the boron-containing film.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: September 22, 2015
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kentaro Kadonaga, Keisuke Suzuki
  • Publication number: 20150044367
    Abstract: A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.
    Type: Application
    Filed: August 6, 2014
    Publication date: February 12, 2015
    Inventors: Peter Werner Sutter, Eli Anguelova Sutter
  • Patent number: 8911867
    Abstract: The invention relates to a protective coating, having the chemical composition CaSibBdNeOgHlMem, wherein Me is at least one metal of the group consisting of {Al, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Y, Sc, La, Ce, Nd, Pm, Sm, Pr, Mg, Ni, Co, Fe, Mn}, with a+b+d+e+g+l+m=1. According to the invention, the following conditions are satisfied: 0.45?a?0.98, 0.01?b?0.40, 0.01?d?0.30, 0?e?0.35, 0?g?0.20, 0?l?0.35, 0?m?0.20. The invention relates also to a coated member having a protective coating, as well as to a method for producing a protective coating, in particular a multilayer film for a member.
    Type: Grant
    Filed: June 18, 2009
    Date of Patent: December 16, 2014
    Assignee: Oerlikon Metaplas GmbH
    Inventor: Jörg Vetter
  • Patent number: 8753717
    Abstract: A film forming method for forming a thin film including boron, nitrogen, silicon, and carbon on a surface of a processing target by supplying a boron containing gas, a nitriding gas, a silane-based gas, and a hydrocarbon gas in a processing container in which the processing target is accommodated to be vacuum sucked includes: a first process which forms a BN film by performing a cycle of alternately and intermittently supplying the boron-containing gas and the nitriding gas once or more; and a second process which forms a SiCN film by performing a cycle of intermittently supplying the silane-based gas, the hydrocarbon gas, and the nitriding gas once or more. Accordingly, the thin film including boron, nitrogen, silicon, and carbon with a low-k dielectric constant, an improved wet-etching resistance, and a reduced leak current can be formed.
    Type: Grant
    Filed: June 15, 2012
    Date of Patent: June 17, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Keisuke Suzuki, Kentaro Kadonaga, Yoshitaka Mori
  • Patent number: 8637156
    Abstract: Layers of a passivating material and/or containing luminescent centers are deposited on phosphor particles or particles that contain a host material that is capable of capturing an excitation energy and transferring it to a luminescent center or layer. The layers are formed in an ALD process. The ALD process permits the formation of very thin layers. Coated phosphors have good resistance to ambient moisture and oxygen, and/or can be designed to emit a distribution of desired light wavelengths.
    Type: Grant
    Filed: April 23, 2012
    Date of Patent: January 28, 2014
    Inventors: Alan W. Weimer, Steven M. George, Karen J. Buochler, Joseph A. Spencer, II, Jarod McCormick
  • Publication number: 20140023784
    Abstract: A method for depositing a film in a substrate processing system includes arranging a substrate on a pedestal in a processing chamber, heating the substrate to a temperature within a predetermined temperature range, and supplying a gas mixture to the processing chamber for a predetermined period to deposit the film on the substrate, wherein the gas mixture includes a first precursor gas, ammonia gas and diborane gas.
    Type: Application
    Filed: July 19, 2013
    Publication date: January 23, 2014
    Inventor: Keith Fox
  • Patent number: 8337950
    Abstract: Methods for processing a substrate with a boron rich film are provided. A patterned layer of boron rich material is deposited on a substrate and can be used as an etch stop. By varying the chemical composition, the selectivity and etch rate of the boron rich material can be optimized for different etch chemistries. The boron rich materials can be deposited over a layer stack substrate in multiple layers and etched in a pattern. The exposed layer stack can then be etched with multiple etch chemistries. Each of the boron rich layers can have a different chemical composition that is optimized for the multiple etch chemistries.
    Type: Grant
    Filed: May 24, 2010
    Date of Patent: December 25, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Victor Nguyen, Yi Chen, Mihaela Balseanu, Isabelita Roflox, Li-Qun Xia, Derek R Witty
  • Patent number: 8324014
    Abstract: The present invention relates to a process for depositing films on a substrate by chemical vapour deposition (CVD) or physical vapour deposition (PVD), said process employing at least one boron compound. This process is particularly useful for fabricating photovoltaic solar cells. The invention also relates to the use of boron compounds for conferring optical and/or electrical properties on materials in a CVD or PVD deposition process. This process is also particularly useful for fabricating a photovoltaic solar cell.
    Type: Grant
    Filed: November 3, 2008
    Date of Patent: December 4, 2012
    Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
    Inventors: Audrey Pinchart, Denis Jahan
  • Publication number: 20120148762
    Abstract: The present disclosure relates to a method of coating a substrate, with the method comprising: providing a substrate; dispersing nanodiamond powder in a liquid to provide a coating precursor; converting the liquid of the coating precursor to a vapor; introducing the coating precursor to a vapor deposition process; and operating the vapor deposition process to produce a nanocrystalline diamond-containing nanocomposite coating on the substrate, the nanocomposite coating produced using the coating precursor and comprising the nanodiamond particles.
    Type: Application
    Filed: December 10, 2010
    Publication date: June 14, 2012
    Applicant: SOUTHWEST RESEARCH INSTITUTE
    Inventors: Ronghua Wei, Christopher Rincon, Kent E. Coulter
  • Patent number: 8178155
    Abstract: A method of manufacturing a high surface area per unit weight carbon electrode includes providing a substrate, depositing a carbon-rich material on the substrate to form a film, and after the depositing, activating the carbon-rich material to increase the surface area of the film of carbon-rich material. Due to the activation process being after deposition, this method enables use of low cost carbon-rich material to form a carbon electrode in the capacitor. The electrode may be used in capacitors, ultracapacitors and lithium ion batteries. The substrate may be part of the electrode, or it may be sacrificial—being consumed during the activation process. The carbon-rich material may include any of carbonized material, carbon aerogel and metal oxides, such as manganese and ruthenium oxide. The activation may include exposing the carbon-rich material to carbon dioxide at elevated temperature, in the range of 300 to 900 degrees centigrade.
    Type: Grant
    Filed: January 27, 2009
    Date of Patent: May 15, 2012
    Assignee: Applied Materials, Inc.
    Inventor: Nag B. Patibandla
  • Patent number: 8163336
    Abstract: Layers of a passivating material and/or containing luminescent centers are deposited on phosphor particles or particles that contain a host material that is capable of capturing an excitation energy and transferring it to a luminescent center or layer. The layers are formed in an ALD process. The ALD process permits the formation of very thin layers. Coated phosphors have good resistance to ambient moisture and oxygen, and/or can be designed to emit a distribution of desired light wavelengths.
    Type: Grant
    Filed: February 19, 2010
    Date of Patent: April 24, 2012
    Inventors: Alan W. Weimer, Steven M. George, Karen J. Buechler, Joseph A. Spencer, II, Jarod McCormick
  • Publication number: 20110171444
    Abstract: A coated cutting tool has a substrate and a coating. The coating includes at least one multi-nano-layer having a nano-composite nano-layer formed of crystalline (TixAlyCrz)N and amorphous Si3N4, wherein 0.25?x?0.75, 0.25?y?0.75, 0.05?z?0.2, 0.85?x+y+z?0.97. The atomic ratio of silicon is 1?x?y?z and 1?x?z<0.75 and the thickness of the nano-composite nano-layer is from 1 nm to 100 nm.
    Type: Application
    Filed: January 3, 2011
    Publication date: July 14, 2011
    Applicant: Iscar, Ltd.
    Inventors: Marcel Elkouby, Ram Greenwald, Oren Etziony
  • Patent number: 7867554
    Abstract: Boron nitride coated fibers, and composite articles comprising such fibers, are described herein. These fibers can be desized and coated in one continuous process, without requiring purging in between processing steps. The fibers may be heated up in an ammonia atmosphere, and then be contacted with a reaction mixture, which comprises a boron source and a nitrogen source. Once coated, the fibers may be utilized in a ceramic matrix composite.
    Type: Grant
    Filed: January 6, 2005
    Date of Patent: January 11, 2011
    Assignee: United Technologies Corporation
    Inventor: Michael A. Kmetz
  • Publication number: 20100227176
    Abstract: A transparent conductive film containing magnesium, at least one element (A) selected from the group consisting of carbon, silicon and boron, plus oxygen, and hydrogen. For example, this transparent conductive film may be manufactured by forming a film containing magnesium and an element (A) on a substrate and holding the film in an atmosphere containing water, which forming uses a target containing magnesium and a target containing the element (A) being at least one selected from the group consisting of carbon, silicon and boron.
    Type: Application
    Filed: October 10, 2008
    Publication date: September 9, 2010
    Applicants: TOKAI UNIVERSITY EDUCATIONAL SYSTEM, AISEKKU NANO TYUBU CO., LTD.
    Inventors: Toshiro Kuji, Masafumi Chiba, Takamitsu Honjo, Koichiro Kotoda
  • Publication number: 20090159808
    Abstract: A method is disclosed for in-situ monitoring of an EUV mirror to determine a degree of optical degradation. The method may comprise the steps/acts of irradiating at least a portion of the mirror with light having a wavelength outside the EUV spectrum, measuring at least a portion of the light after the light has reflected from the mirror, and using the measurement and a pre-determined relationship between mirror degradation and light reflectivity to estimate a degree of multi-layer mirror degradation. Also disclosed is a method for preparing a near-normal incidence, EUV mirror which may comprise the steps/acts of providing a metallic substrate, diamond turning a surface of the substrate, depositing at least one intermediate material overlying the surface using a physical vapor deposition technique, and depositing a multi-layer mirror coating overlying the intermediate material.
    Type: Application
    Filed: December 20, 2007
    Publication date: June 25, 2009
    Applicant: Cymer, Inc.
    Inventors: Norbert R. Bowering, Igor V. Fomenkov, Oleh V. Khodykin, Alexander N. Bykanov
  • Patent number: 7510608
    Abstract: Disclosed herein is a hard coating film of laminate type which comprises more than one layer of a first kind, which has a composition represented by the formula (1a) below and a thickness of 1 to 80 nm, and more than one layer of a second kind, which has a composition represented by the formula (2a) below and a thickness of 1 to 80 nm, the layers being placed alternately one over another. (Cr(1-a)Ala)(C(1-x)Nx) ??(1a) (Zr(1-k)Hfk)(C(1-y)Ny) ??(2a) where each subscript denotes the atomic ratio specified below. 0.2?a?0.8 0.7?x?1 0?k?1 0.5?y?1 The hard coating film has outstanding high-temperature characteristics.
    Type: Grant
    Filed: August 23, 2006
    Date of Patent: March 31, 2009
    Assignee: Kobe Steel Ltd.
    Inventor: Kenji Yamamoto
  • Patent number: 7479302
    Abstract: An actively-cooled, fiber-reinforced ceramic matrix composite thrust chamber for liquid rocket propulsion systems is designed and produced with internal cooling channels. The monocoque tubular structure consists of an inner wall, which is fully integrated to an outer wall via radial coupling webs. Segmented annular void spaces between the inner wall, outer wall and adjoining radial webs form the internal trapezoidal-shaped cooling channel passages of the tubular heat exchanger. The manufacturing method enables producing any general tubular shell geometry ranging from simple cylindrical heat exchanger tubes to complex converging-diverging, Delaval-type nozzle structures with an annular array of internal cooling channels. The manufacturing method allows for transitioning the tubular shell structure from a two-dimensional circular geometry to a three-dimensional rectangular geometry.
    Type: Grant
    Filed: June 14, 2004
    Date of Patent: January 20, 2009
    Inventor: Wayne S. Steffier
  • Patent number: 7452569
    Abstract: In a method of manufacturing a metal wiring, an organic aluminum precursor that includes aluminum as a central metal is applied to a substrate. The organic aluminum precursor applied to the substrate is thermally decomposed to form aluminum. The aluminum is deposited on the substrate to form an aluminum wiring having a low resistance. The organic aluminum precursor includes a chemical structure in accordance with one of the chemical formulae: wherein R1, R2, R3, R4 and R5 are independently H or a C1-C5 alkyl functional group, n is an integer of 1 to 5, x is 1 or 2, and y is 0 or 1, or wherein R1, R2, R3, R4 R5, R6, R7 and R8 are independently H or a C1-C5 alkyl functional group, and Y is boron.
    Type: Grant
    Filed: September 21, 2006
    Date of Patent: November 18, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-Ho Lee, Jung-Sik Choi, Jun-Hyun Cho, Youn-Joung Cho, Tae-Sung Kim, Mi-Ae Kim, Kyoo-Chul Cho
  • Patent number: 7442414
    Abstract: Methods for producing reinforced carbon nanotubes having a plurality of microparticulate carbide or oxide materials formed substantially on the surface of such reinforced carbon nanotubes composite materials are disclosed. In particular, the present invention provides reinforced carbon nanotubes (CNTs) having a plurality of boron carbide nanolumps formed substantially on a surface of the reinforced CNTs that provide a reinforcing effect on CNTs, enabling their use as effective reinforcing fillers for matrix materials to give high-strength composites. The present invention also provides methods for producing such carbide reinforced CNTs.
    Type: Grant
    Filed: November 12, 2004
    Date of Patent: October 28, 2008
    Assignee: The Trustees of Boston College
    Inventors: Zhifen Ren, Jian Guo Wen, Jing Y. Lao, Wenzhi Li
  • Patent number: 7438790
    Abstract: The present invention provides an electrode for electrolysis including: a conductive substrate; and a conductive diamond formed on a surface of the conductive substrate, the conductive substrate having at least one surface shape selected from the group consisting of: (a) a surface shape of a combination of an Ra of 100-1,000-?m and an RSm of 50-10,000 ?m; (b) a surface shape of a combination of an Ra of 2.5-100 ?m and an RSm of 1.5-800 ?m, and (c) a surface shape of a combination of an Ra of 0.01-2 ?m and an RSm of 0.005-250 ?m, and a process for producing the electrode.
    Type: Grant
    Filed: July 25, 2006
    Date of Patent: October 21, 2008
    Assignee: Permelec Electrode Ltd.
    Inventors: Masashi Hosonuma, Masaharu Uno, Tomoyasu Shibata, Yoshinori Nishiki, Tsuneto Furuta
  • Publication number: 20080164429
    Abstract: The present invention describes a bolometric device with receiving cavity for measuring a beam of high frequency microwaves, comprising a hollow body (1) with receiving cavity (50) having an opening (2) for the entrance of said beam of high frequency microwaves in said receiving cavity (50), a diverging mirror (3) located in the lower part of said cavity (50) for reflecting said beam of microwaves on an absorbent coating material (4) applied on the internal surface (5) of the hollow body (1), a cooling circuit (7) for transferring the thermal energy accumulated on the absorbent coating material (4) and a circuit (6) for measuring the power of the beam of high frequency microwaves entering the hollow body (1). Said absorbent coating material (4) consists of boron carbide. In addition a procedure is described for coating with an absorbent material the internal surface (5) of a hollow body (1) being part of the aforementioned device for measuring a beam of high frequency microwaves (FIG. 1).
    Type: Application
    Filed: February 1, 2006
    Publication date: July 10, 2008
    Inventors: Nicolo Spinicchia, Alessandro Bruschi, Sante Giovanni Cirant, Valerio Muzzini, Antonio Nardone
  • Patent number: 7354631
    Abstract: This invention includes chemical vapor deposition apparatus, methods of chemical vapor depositing an amorphous carbon comprising layer on a substrate, and methods of chemical vapor depositing at least one of Si3N4 and SixOyNz on a substrate. In certain implementations, a gas output manifold having at least one gas output to a deposition chamber and at least three gas inputs is utilized. In certain implementations, a remote plasma generator is utilized. In certain implementations, at least one cleaning gas input line feeds the remote plasma generator. In certain implementations, the at least one cleaning gas input line includes an amorphous carbon cleaning gas input and an Si3N4 or SixOyNz cleaning gas input.
    Type: Grant
    Filed: November 6, 2003
    Date of Patent: April 8, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Jeff N. Fuss, Kevin T. Hamer, Zhiping Yin
  • Patent number: 7314540
    Abstract: A diamond electrode having a sufficiently low resistance is disclosed which is realized by increasing the amount of boron added thereto. A method for producing a high-performance, high-durability electrode is also disclosed by which adhesiveness between a diamond coating and a substrate and separation resistance during electrolysis are sufficiently increased. An electrode composed of a substrate and a diamond layer coating the substrate is characterized in that the electrode is composed of a base coated with diamond and the diamond contains boron in such an amount that the boron concentration is not less than 10,000 ppm but not more than 100,000 ppm. The base is preferably made of an insulating material.
    Type: Grant
    Filed: May 25, 2004
    Date of Patent: January 1, 2008
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yuichiro Seki, Kenji Izumi, Takahiro Imai
  • Patent number: 7306826
    Abstract: A method for making a ceramic matrix composite turbine engine component, wherein the method includes providing a plurality of biased ceramic plies, wherein each biased ply comprises ceramic fiber tows, the tows being woven in a first warp direction and a second weft direction, the second weft direction lying at a preselected angular orientation with respect to the first warp direction, wherein a greater number of tows are woven in the first warp direction than in the second weft direction. The plurality of biased plies are laid up in a preselected arrangement to form the component, and a preselected number of the plurality of biased plies are oriented such that the orientation of the first warp direction of the plies lie about in the direction of maximum tensile stress during normal engine operation. A coating is applied to the plurality of biased plies. The coated component preform is then densified.
    Type: Grant
    Filed: February 23, 2004
    Date of Patent: December 11, 2007
    Assignee: General Electric Company
    Inventors: Suresh Subramanian, James Dale Steibel, Douglas Melton Carper, Brian Keith Flandermeyer
  • Patent number: 7160617
    Abstract: A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 ?m, or has a volume exceeding 1 mm3, or a combination of such characteristics.
    Type: Grant
    Filed: September 3, 2003
    Date of Patent: January 9, 2007
    Inventors: Geoffrey Alan Scarsbrook, Philip Maurice Martineau, Daniel James Twitchen, Andrew John Whitehead, Michael Andrew Cooper, Bärbel Susanne Charlotte Dorn
  • Patent number: 7153543
    Abstract: Refractory carbide particles are located in a defined area of a matrix, specifically silicon carbide particles are encapsulated within a porous matrix or carbon precursor, by locating particles of refractory carbide-forming material or a precursor thereof in a defined area of the matrix followed by depositing carbon within the matrix at a temperature below that of the melting point of the carbide-forming material.
    Type: Grant
    Filed: May 23, 2002
    Date of Patent: December 26, 2006
    Assignee: Dunlop Aerospace Limited
    Inventor: David Callum Johnson
  • Patent number: 7132129
    Abstract: A method of forming a diamond coating on an iron-based substrate, comprising: providing an iron based substrate with an outer layer which substantially comprises metal borides; and depositing the diamond coating on the outer layer using a process of Chemical Vapor Deposition (CVD). An outer layer may be formed by deposition, by depositing a metal layer which is capable of being boronized followed by boronizing the metal layer, or by boronizing the iron-based substrate. The invention is also related to the use of an iron-based substrate comprising an outer layer with borides for hosting a CVD diamond coating.
    Type: Grant
    Filed: August 31, 2004
    Date of Patent: November 7, 2006
    Assignee: Stichting voor de Technische Wetenschappen
    Inventors: Wilhelmus Johannes Jacobus van Enckevort, Johannes Jacobus Schermer, Josephus Gerardus Buijnsters, Prabhakaran Shankar, Johannes Joseph ter Meulen
  • Patent number: 7029723
    Abstract: Carborane may be used as a precursor to form low dielectric constant dielectrics. The carborane material may be modified to enable it to be deposited by chemical vapor deposition.
    Type: Grant
    Filed: January 7, 2003
    Date of Patent: April 18, 2006
    Assignee: Intel Corporation
    Inventors: Tian-An Chen, Robert Meagley, Kevin P. O'Brien, Michael D. Goodner, James Powers
  • Patent number: 6913827
    Abstract: Particles have an ultrathin, conformal coating are made using atomic layer deposition methods. The base particles include ceramic and metallic materials. The coatings can also be ceramic or metal materials that can be deposited in a binary reaction sequence. The coated particles are useful as fillers for electronic packaging applications, for making ceramic or cermet parts, as supported catalysts, as well as other applications.
    Type: Grant
    Filed: December 9, 2003
    Date of Patent: July 5, 2005
    Assignee: The Regents of the University of Colorado
    Inventors: Steven M. George, John D. Ferguson, Alan W. Weimer, Jeffrey R. Wank
  • Patent number: 6863926
    Abstract: A method and apparatus are provided for protecting internal aluminum components of a plasma reactor from plasma-induced erosion. The components are coated, first with a dielectric layer, then with a thin layer of one or more metals selected from the group consisting of gold, chromium, platinum, silver and rhenium. The dielectric layer may either be grown or deposited. The metal layer is deposited, preferably using evaporative deposition.
    Type: Grant
    Filed: January 15, 2003
    Date of Patent: March 8, 2005
    Inventor: David Mark Lynn
  • Patent number: 6808747
    Abstract: A method of depositing boron carbide on an aluminum substrate, particularly useful for a plasma etch reactor having interior surfaces facing the plasma composed of boron carbide, preferably principally composed of B4C. Although in this application, the boron carbide may be a bulk sintered body, in the method of the invention it may be a layer of boron carbide coated on an aluminum chamber part. The boron carbide coating may be applied by thermal spraying, such as plasma spraying, by chemical vapor deposition, or by other layer forming technique such as a surface converting reaction. The boron carbide is highly resistant to high-density plasma etchants such as BCl3. The plasma sprayed coating is advantageously applied to only a portion of an anodized aluminum wall. The boron carbide may be sprayed over the exposed portion of an aluminum substrate over which the anodization has been removed.
    Type: Grant
    Filed: January 21, 2000
    Date of Patent: October 26, 2004
    Inventors: Hong Shih, Nianci Han
  • Patent number: 6794295
    Abstract: A process for depositing, through plasma enhanced chemical vapor deposition, inorganic films having low dielectric constant is disclosed. After deposition under low power for a few seconds the power is raised to high for a few seconds, deposition of the film continuing to alternate between low and high power modes until the total desired thickness is reached. Additionally, for the deposition of materials such as black diamond, oxygen is added to the plasma during the high power phase (and removed during the low power phase). We have found that films deposited in this way have low flat band voltages, close to zero, and are, in general, more robust than films deposited according to prior art methods. In particular, these films are free of the cracking problems often encountered during chemical mechanical polishing of films of this type during the formation of damascene structures.
    Type: Grant
    Filed: May 26, 2000
    Date of Patent: September 21, 2004
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng Chung Lin, Lain-Jong Li
  • Patent number: 6770575
    Abstract: A process for forming a thermally stable low-dielectric constant material is provided. A gas mixture is prepared to form a fluorinated amorphous carbon (a-C:F) material. The gas mixture is mixed with a boron-containing gas.
    Type: Grant
    Filed: February 25, 2002
    Date of Patent: August 3, 2004
    Assignee: Intel Corporation
    Inventor: Steven N. Towle
  • Patent number: 6713177
    Abstract: Particles have an ultrathin, conformal coating are made using atomic layer deposition methods. The base particles include ceramic and metallic materials. The coatings can also be ceramic or metal materials that can be deposited in a binary reaction sequence. The coated particles are useful as fillers for electronic packaging applications, for making ceramic or cermet parts, as supported catalysts, as well as other applications.
    Type: Grant
    Filed: July 16, 2002
    Date of Patent: March 30, 2004
    Assignee: Regents of the University of Colorado
    Inventors: Steven M. George, John D. Ferguson, Alan W. Weimer, Jeffrey R. Wank
  • Patent number: 6669989
    Abstract: The invention relates to a method and apparatus for the production of protective coatings on parts. A coating formed in accordance with the invention has a chemical composition and structure gradient across its thickness. The coating is obtained by heating of a composite ingot including a body and at least one insert disposed within the body. As the composite ingot is heated it sequentially evaporates to produce a vapor with a chemical composition varying over the evaporation time period. The composition of the body and composition and location of the insert within the body function to determine the chemical composition of the vapor at any time. Condensation and/or deposition of the vapor onto a substrate forms the inventive coating.
    Type: Grant
    Filed: November 7, 2001
    Date of Patent: December 30, 2003
    Assignee: International Center for Electron Beam Technologies of E. O. Paton Electric Welding Institute
    Inventors: Boris A. Movchan, Leonila M. Nerodenko, Jury E. Rudoy
  • Patent number: 6610362
    Abstract: A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition apparatus a source of carbon, silicon, boron, and oxygen. That apparatus is then operated under conditions that cause a boron containing carbon doped oxide layer to form on the substrate.
    Type: Grant
    Filed: November 20, 2000
    Date of Patent: August 26, 2003
    Assignee: Intel Corporation
    Inventor: Steven N. Towle
  • Patent number: 6478994
    Abstract: A method for making a boron carbide containing ceramic involves pyrolyzing a precursor having one or more monosubstituted decaboranyl groups and at least one substituting group containing carbon. The precursor may be molecular, for example comprising two decaboranyl groups linked by a single substituting group, or polymeric, in which case the decaboranyl groups are part of the pendant group of the polymer while a portion of the substituting group makes up the polymer backbone. In either case, the substituting group may be a hydrocarbon, in which case boron carbide may be formed. Alternatively, the substituting group may contain carbon and another ceramic forming element (i.e., other than boron or carbon), such as silicon, nitrogen, or phosphorous, in which case a composite including boron carbide is formed.
    Type: Grant
    Filed: March 30, 2000
    Date of Patent: November 12, 2002
    Assignee: Trustees of the University of Pennsylvania
    Inventors: Larry G. Sneddon, Mark J. Pender
  • Patent number: 6432480
    Abstract: The invention consists of a coated metallic component which exhibits improved wear and pitting resistance, and a method for making the invention. A metallic component is coated with a functionally gradient material utilizing both a non-oxide containing coating and boron oxide coating. This invention is useful for rolling and sliding contacts.
    Type: Grant
    Filed: September 27, 1999
    Date of Patent: August 13, 2002
    Assignee: Caterpillar Inc.
    Inventors: Ajayi O. Oyelayo, Michael H. Haselkorn
  • Publication number: 20020094378
    Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a carbonitride containing surface and process for manufacture thereof.
    Type: Application
    Filed: December 29, 2000
    Publication date: July 18, 2002
    Inventors: Robert J. O'Donnell, John E. Daugherty, Christopher C. Chang
  • Publication number: 20020088707
    Abstract: A process for forming a thermally stable low-dielectric constant material is provided. A gas mixture is prepared to form a fluorinated amorphous carbon (a-C:F) material. The gas mixture is mixed with a boron-containing gas.
    Type: Application
    Filed: February 25, 2002
    Publication date: July 11, 2002
    Inventor: Steven N. Towle
  • Publication number: 20010048095
    Abstract: A process for forming a thermally stable low-dielectric constant material is provided. A gas mixture is prepared to form a fluorinated amorphous carbon (a-C:F) material. The gas mixture is mixed with a boron-containing gas.
    Type: Application
    Filed: July 1, 1998
    Publication date: December 6, 2001
    Inventor: STEVEN N. TOWLE
  • Patent number: 6316051
    Abstract: Silicon carbide fibers having an excellent mechanical strength and a superior heat resistance can be produced by the process in which activated carbon fibers having a thickness of 1 to 30 &mgr;m and a BET specific surface area of 700 to 1500 m2/g are reacted with a silicon and/or silicon oxide gas at 1200 to 1500° C. under a reduced pressure or in an inert gas atmosphere; and the resultant SiC fibers are heat treated in the presence of a boron-containing substance and optionally a carbon-containing substance at 1700 to 2300° C. in an inert gas atmosphere, wherein the fibers may be in the form of a shaped article, for example, a sheet or honeycomb structure.
    Type: Grant
    Filed: December 21, 1998
    Date of Patent: November 13, 2001
    Assignee: Oji Paper Co., Ltd.
    Inventor: Kaoru Okada
  • Patent number: 6284357
    Abstract: A laminated matrix composite made of a reinforcement phase and coated with several layers of a metallic, ceramic, or polymeric matrix material, the average thickness of the layers of matrix material being between 0.005 and 5 &mgr;m thick.
    Type: Grant
    Filed: January 14, 1999
    Date of Patent: September 4, 2001
    Assignee: Georgia Tech Research Corp.
    Inventors: Walter J. Lackey, Stuart R. Stock
  • Publication number: 20010008651
    Abstract: Silicon carbide fibers having an excellent mechanical strength and a superior heat resistance can be produced by the process in which activated carbon fibers having a thickness of 1 to 30 &mgr;m and a BET specific surface area of 700 to 1500 m2/g are reacted with a silicon and/or silicon oxide gas at 1200 to 1500° C. under a reduced pressure or in an inert gas atmosphere; and the resultant SiC fibers are heat treated in the presence of a boron-containing substance and optionally a carbon-containing substance at 1700 to 2300° C. in an inert gas atmosphere, wherein the fibers may be in the form of a shaped article, for example, a sheet or honeycomb structure.
    Type: Application
    Filed: December 21, 1998
    Publication date: July 19, 2001
    Inventor: KAORU OKADA
  • Patent number: 6168833
    Abstract: A process for coating an object with ceramic material vaporized from an ingot of the ceramic material. The process comprises the steps of (a) evaporating the material by melting the surface of the ingot with an intense heat source; and (b) depositing the evaporated material upon the object as a coating. The ingot comprises an unsintered mixture of at least two powder fractions of at least 50% to 90% by volume of a coarse-grained powder and 10% to 50% by volume of a fine-grained powder. The average particle diameter, d50, of the fine-grained powder is at most one third the average particle diameter of the coarse-grained powder.
    Type: Grant
    Filed: February 16, 1999
    Date of Patent: January 2, 2001
    Assignee: DLR Deutsche Forschungsanstalt f{umlaut over (u)}r Luft-und Raumfahrt e.V.
    Inventors: Uwe Leushake, Walter Luxem, Claus-J{umlaut over (u)}rgen Kröder, Wolf-D. Zimmermann