Abstract: A chemical vapor deposition process comprising heating a porous metal template at a temperature range of 500 to 2000° C.; and passing a gas mixture comprising a carrier gas carrying along a vapor of an organometallic compound and at least one of a carbon precursor gas and a boron nitride precursor gas through the heated metal template is provided. The heating temperature causes the decomposition of the organometallic compound vapor into metal particles, the carbon precursor gas into graphene domains, and/or the boron nitride precursor gas into hexagonal-boron nitride domains. The graphene domains and/or the hexagonal-boron nitride domains nucleate and grow on the metal particles and the metal template to form a three-dimensional interconnected porous network of graphene and/or the hexagonal-boron nitride. A foam-like structure produced by a process as described above is also provided.

Abstract: A novel composite diamond film comprising of a relatively thick layer of UNCD (Ultrananocrystalline Diamond) with a Young's modulus of less than 900 GPa and a relatively thin MCD (microcrystalline diamond) outermost layer with a Young's modulus of greater than 900 GPa, has been shown to exhibit superior delamination resistance under extreme shear stress. It is hypothesized that this improvement is due to a combination of stress relief by the composite film with a slightly “softer” UNCD layer, a disruption of the fracture mechanism through the composite layer(s), and the near ideal chemical and thermal expansion coefficient match between the two diamond layers. The combination of a thick but “softer” underlying UNCD layer with a thin but harder overlying MCD layer provides an excellent compromise between the low deposition cost and smoothness of UNCD with the extreme hardness and unparalleled chemical, electrochemical and immunological inertness of even a thin layer of MCD.

Abstract: The present diamond single crystal is a diamond single crystal containing nitrogen atoms, in which a concentration of the nitrogen atoms changes periodically along a crystal orientation of the diamond single crystal, and an arithmetic average value Aave, a maximum value Amax, and a minimum value Amin of the distance of one period along the crystal orientation satisfy the relationship expressed by the following equation (I): (Amax)/1.25?(Aave)?(Amin)/0.75??(I).

Abstract: The crystal plane in the interior of the diamond substrate has a curvature higher than 0 km?1 and equal to or lower than 1500 km?1 by preparing a base substrate, forming a plurality of pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate, causing diamond single crystals to grow from tips of each pillar-shaped diamond, coalescing each of the diamond single crystals grown from the tips of each pillar-shaped diamond to form a diamond substrate layer, separating the diamond substrate layer from the base substrate, and manufacturing the diamond substrate from the diamond substrate layer.

Abstract: A method for synthesizing a multilayer graphene is provided. Specifically, the multilayer graphene can be produced by performing a step of forming a catalytic metal layer on a substrate, a step of heat-treating the catalytic metal layer on the substrate while supplying methane gas, and a step of synthesizing a multilayer graphene on the heat-treated catalytic metal layer. As described above, the multilayer graphene having a large area can be grown directly on a substrate, by heat-treating the catalytic metal layer using methane gas, prior to the step of synthesis of graphene. In addition, as the the number of layer of the multilayer graphene can be controlled by changing the synthesis time of the multilayer graphene, the multilayer graphene with the desired number of layers can be easily produced.

Abstract: A method of making fancy orange synthetic CVD diamond material is described. The method comprises irradiating a single crystal diamond material that has been grown by CVD to introduce isolated vacancies into at least part of the CVD diamond material and then annealing the irradiated diamond material to form vacancy chains from at least some of the introduced isolated vacancies. Fancy orange CVD diamond material is also described.

Abstract: Method for synthesizing a material by chemical vapor deposition (CVD), according to which a plasma is created in a vacuum chamber in the vicinity of a substrate, and according to which a carbon-carrying substance and H2 are introduced into the chamber in order to produce in the chamber a gas comprising substances carrying reactive-carbon atoms in the form of unsaturated molecules or radicals from which the synthesis of said material will be performed, and in that the electromagnetic absorption and inelastic diffusion spectra of the solid material to be synthesized are used to take from these spectra the absorption frequencies that contribute to the reactions that lead to the formation of the solid material to be synthesized, and in that energetic rays are produced in the form of a photon beam carrying quantities of energy determined by each of the frequencies corresponding to said absorption and inelastic diffusion frequencies, said photon beam being injected into the plasma where, for energy states of the so

Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapor deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized a

Abstract: A substrate for biochips which has a high probe loading amounts and a uniform immobilization density, and which further has a high detection sensitivity and a high reproducibility by preventing a non-specific adsorption of proteins, when used as a substrate for biochips for immobilizing probes composed of biologically relevant substances such as proteins and nucleic acids, is disclosed. Amino groups can be bound to the surface of the substrate uniformly, at a high density and stably by covalently immobilizing an amino group-containing polymer on the surface of the substrate. The probe immobilization rate is high and immobilizing density was uniform by immobilizing a probe composed of a biologically relevant substance such as a protein or nucleic acid by utilizing the amino groups. Further, detection sensitivity and reproducibility are high by inhibiting non-specific adsorption of proteins.

Abstract: Disclosed is a combinatorial synthesis of Diamond wherein a first reactive species is produced by catalytic treatment of Acetylene, a second reactive species is produced by decomposition of a hydrocarbon source having a low Hydrogen-to-Carbon ratio using a high energy discharge, and the two reactive species so obtained are combined in the vapor phase to yield Diamond without the need of post-treatments. The reaction is efficient and affords Diamond under mild conditions with high purity such that it may be useful for producing Diamond for semiconductor and microelectronics applications.

Abstract: Method for coating micromechanical components of a micromechanical system, in particular a watch movement, comprising: providing a substrate component to be coated; providing said component with a diamond coating; wherein diamond coating is provide by CVD in a reaction chamber and during CVD deposition, during the last portion of the growth process, a controlled change of the carbon content within the reaction chamber is provided, thereby providing a change of the sp2/sp3 carbon bonds in the vicinity of the surface. Corresponding micromechanical components are also provided.

Abstract: A method of manufacturing or surface treating a wire wrapped screen for use in a wellbore improves the erosion resistance of the wire-wrapped screen. The wire-wrapped screen can be disposed on an axle positioned in a chamber containing a source of erosion resistant surface coating. The coating is then deposited on the exterior of the wire-wrapped screen using a deposition process, such as physical vapor deposition or thermal spraying. Alternatively, a spray system proximate the wire-wrapped screen can have a deposition nozzle to coat the exterior surface of the screen with an elastomer coating by spraying an elastomer. In additional embodiments, the wire for the wire-wrapped screen can first be treated for erosion resistance and then wound about a mandrel to form the wire-wrapped screen.

Abstract: A method of manufacturing a diamond layer having a porous three-dimensional structure, the method being of the type which includes growing the diamond layer from a sacrificial material and gradually decomposing said sacrificial material during growth of the diamond layer, said material including the following steps; 1) provision of a substrate capable of supporting the plasma-enhanced chemical vapor deposition growth of the diamond layer on at least one of the surfaces of the substrate, the substrate comprising, on said at least one surface thereof, a layer made of a sacrificial material having a porous three-dimensional structure capable of gradually decomposing upon contact with said plasma, the layer of sacrificial material containing diamond grains of nanometric size, and 2) growth by plasma-enhanced chemical vapor deposition of the diamond layer from diamond grains and concomitant and gradual decomposition of the sacrificial material upon contact with said plasma.

Abstract: A method to fabricate nanoporous diamond membranes and a nanoporous diamond membrane are provided. A silicon substrate is provided and an optical lithography is used to produce metal dots on the silicon substrate with a predefined spacing between the dots. Selective seeding of the silicon wafer with nanodiamond solution in water is performed followed by controlled lateral diamond film growth producing the nanoporous diamond membrane. Back etching of the under laying silicon is performed to open nanopores in the produced nanoporous diamond membrane.

Abstract: An apparatus, a method, a planar insulating substrate and a chipset have been presented, comprising at least one module configured to establish a predefined pattern on a planar insulating substrate so that conductive particles can gather according to the predefined pattern. At least one another module is configured to transfer the conductive particles to the planar insulating substrate, wherein the conductive particles are arranged to gather according to the predefined pattern. A sintering module is configured to fuse the conductive particles on the planar insulating substrate, wherein the conductive particles are arranged to fuse according to the predefined pattern to establish a conductive plane on the planar insulating substrate. Embodiment of the invention relate to printable or printing electronics on a fibrous web.

Abstract: Plasma assisted chemical vapor deposition is used to form single crystal diamond from a seed and methane. A susceptor is used to support the seed. Under certain conditions, crystalline grit is formed in addition to the diamond. The crystalline grit in one embodiment comprises mono crystals or twin crystals of carbon, each having its own nucleus. The crystals form in columns or tendrils to the side of the monocrystalline diamond or off a side of the susceptor. The crystals may have bonding imperfections which simulate doping, providing conductivity. They may also be directly doped. Many tools may be coated with the grit.

Abstract: A diamond layer can be applied stably onto a graphite substrate in a CVD process when the graphite substrate is subjected to the following pretreatment steps before the CVD process: fine cleaning of the surface in a vacuum at a temperature >500° C., preferably >800° C., in an etching gas atmosphere, mechanical removal of loose particles, seeding of the substrate surface with very small diamond particles and at least one degassing treatment in a vacuum to remove adsorbed hydrocarbons and adsorbed air at a temperature T>500° C., preferably T>700° C.

Abstract: It is intended to provide a solid support capable of immobilizing nucleic acid molecules in a high proportion, and with a high bond strength to nucleic acid molecules. The solid support comprises a substrate and, provided thereon, an electrostatic layer for electrostatically attracting nucleic acid molecules and functional groups capable of covalently binding to nucleic acid molecules.

Abstract: The present disclosure relates to a chemical vapor deposition apparatus for synthesizing a diamond film and a method for synthesizing a diamond film using the same, which maintains the substrate temperature at an optimum level by suppressing the rise of a substrate temperature, and, thus, improves the degree of activation of a diamond synthesizing gas to increase a diamond growth rate when synthesizing a diamond film. The chemical vapor deposition apparatus for synthesizing a diamond film according to the present disclosure includes a chamber in which a chemical vapor deposition process is performed, a substrate provided in the chamber and giving a place where diamond is grown, and a heat-shielding structure spaced above from the substrate, wherein the heat-shielding structure includes an opening through which a precursor gas is transferable.

Abstract: It is intended to provide a solid support capable of immobilizing nucleic acid molecules in a high proportion, and with a high bond strength to nucleic acid molecules. The solid support comprises a substrate and, provided thereon, an electrostatic layer for electrostatically attracting nucleic acid molecules and functional groups capable of covalently binding to nucleic acid molecules.

Abstract: The present invention is directed towards methods for growing diamond nanowires via chemical vapor deposition and apparatuses that incorporate these diamond nanowires.

Abstract: Disclosed is a carbon film which has optical characteristics of retaining a high transparency and being high in refractive index and low in double refractivity, is excellent in electric insulating performance, can be applied to various base materials with good adhesiveness, and can be formed at low temperature. Also disclosed is a laminate including a carbon film and a method for producing the laminate.

Abstract: A method of creating adherent, fracture-toughened polycrystalline diamond coatings on carbide cutting tools or other workpiece substrates through the development of composite coatings comprising polycrystalline diamond and carbon nanotubes is described. The coating is deposited through a chemical vapor deposition process using a pre-determined hydrocarbon-hydrogen gas mixture suitable for nucleating diamond on the carbide particles and carbon nanotubes on the metallic binder. The deposited coating, which may be up to 30 micrometers in thickness, is typically characterized by a diamond or diamond-like carbon matrix in which carbon nanotubes are distributed as fiber-like filler materials.

Abstract: A method of coating a substrate, with the method comprising: providing a substrate; dispersing nanodiamond powder in a liquid to provide a coating precursor; converting the liquid of the coating precursor to a vapor; introducing the coating precursor to a vapor deposition process; and operating the vapor deposition process to produce a nanocrystalline diamond-containing nanocomposite coating on the substrate, the nanocomposite coating produced using the coating precursor and comprising the nanodiamond particles.

Abstract: The invention presents a simple, non-destructive and non-abrasive method of diamond nucleation using polyethene. It particularly describes the nucleation of diamond on an electrically viable substrate surface using polyethene via chemical vapor deposition (CVD) technique in a gaseous environment.

Abstract: A method of growing carbonaceous particles comprises depositing carbon from a carbon source, onto a particle nucleus, the particle nucleus being a carbon-containing material, an inorganic material, or a combination comprising at least one of the foregoing, and the carbon source comprising a saturated or unsaturated compound of C20 or less, the carbonaceous particles having a uniform particle size and particle size distribution. The method is useful for preparing polycrystalline diamond compacts (PDCs) by a high-pressure, high temperature (HPHT) process.

Abstract: A method of forming a cutting element that includes placing at least one cutting element in an inner surface of at least one hollow tubular member such that at least a portion of the at least one cutting element is exposed; generating plasma within the hollow portion of the tubular; and depositing at least one refractory metal or sp3 carbon-containing coating on an exposed surface of the at least one cutting element is disclosed.

Abstract: Methods of forming a hardfacing material include subjecting diamond grains to elevated temperatures and pressures to form diamond-to-diamond bonds between the diamond grains and form a PCD material. The PCD material is broken down to form PCD particles that include a plurality of inter-bonded diamond grains.

Abstract: A method for forming an aperture includes stamping an aperture into the article using a pellet, and refining aperture shape(s) and/or aperture dimensions. Methods for forming articles having reduced residual compressive stress are also disclosed. Very generally, the methods include establishing a diamond coating on at least a portion of a substrate, and applying a stress-relief process to the diamond coating, the substrate, or combinations thereof.

Abstract: In the method for depositing a material in the absence of a positive column, a discharge is generated between a cathode and an anode disposed to face each other in a reaction chamber by applying a DC voltage therebetween, and introducing reaction gas into the reaction chamber, thereby depositing a material on a substrate mounted on the anode and serving as a part of the anode, wherein the deposition of the material on the substrate is performed under a state that a cathode glow and an anode glow exist in a form of thin layers coating respectively the surfaces of the cathode and the substrate, while a positive column does not exist or is so small as to be negligible.

Abstract: The present disclosure relates to a method of coating a substrate, with the method comprising: providing a substrate; dispersing nanodiamond powder in a liquid to provide a coating precursor; converting the liquid of the coating precursor to a vapor; introducing the coating precursor to a vapor deposition process; and operating the vapor deposition process to produce a nanocrystalline diamond-containing nanocomposite coating on the substrate, the nanocomposite coating produced using the coating precursor and comprising the nanodiamond particles.

Abstract: An object of the present invention is to provide a copper foil with carrier sheet which permits releasing of the carrier sheet from the copper foil layer even when hot pressing at a temperature exceeding 300° C. is applied in the production of a printed wiring board. In order to achieve the object, a copper foil with physically releasable carrier sheet having a copper foil layer on the surface of the carrier sheet through a bonding interface layer, characterized in that the bonding interface layer is composed of a metal layer and a carbon layer. It is preferable for the bonding interface layer to be composed of a metal layer of 1 nm to 50 nm thick and a carbon layer of 1 nm to 20 nm thick.

Abstract: A method for changing the color of a diamond. The method comprises placing the diamond in a substrate holder in a chemical vapor deposition (CVD) equipment. The CVD equipment is maintained at pressures near or below atmospheric pressure. A mixture of gases including hydrogen is introduced inside the CVD equipment. The introduced mixture of gases is energized by using microwave radiation to heat the diamond to temperatures above 1400° C. Then, the diamond is maintained at temperatures above 1400° C. for few seconds to few hours.

Abstract: The present invention relates to a method of preventing abnormal large grains from being included in a NCD thin film during a hot filament CVD process by appropriately controlling the deposition condition regarding a temperature-measuring means, a deposition pressure, an electrical potential and/or the composition of a raw material gas flow.

Abstract: There is provided a method of making a heat treated (HT) coated article to be used in shower door applications, window applications, or any other suitable applications where transparent coated articles are desired. The method may include heat treating a glass substrate coated with at least a layer of or including diamond-like carbon (DLC) or other type of carbon, with a protective film thereon. In certain example embodiments, the protective film may be of or include a layer of or including SnOx prior to HT. Optionally, a release layer of a material such as zinc oxide may be provided between the SnOx and the DLC. Following and/or during heat treatment the SnOx transforms into SnOy (y>x) so that stress is created due to the SnOx to SnOy transition. Then, during quenching, stress relief may occur which causes the layer to buckle, creating cracks which may act as liquid channels that permit the sacrificial film to be easily removed via washing or the like.

Abstract: A process for making nanostructures on a support, including: supplying a support including a surface layer on one of its faces, covering the surface layer by a catalyst layer structured according to a pattern exposing areas of the surface layer covered by the catalyst and areas of the surface layer not covered by the catalyst, etching the thickness of the surface layer in the areas not covered by the catalyst layer, and selectively growing nanostructures on the areas of the surface layer covered by the catalyst. The process can also be used to make cathode structures with electrically independent nanostructures.

Abstract: A heavily boron-doped diamond thin film having superconductivity is deposited by chemical vapor deposition using gas mixture of at least carbon compound and boron compound, including hydrogen. An advantage of the diamond thin film deposited by the chemical vapor deposition is that it can contain boron at high concentration, especially in (111) oriented films. The boron-doped diamond thin film deposited by the chemical vapor deposition shows the characteristics of typical type II superconductor.

Abstract: Methods of applying a nanocrystalline diamond film to a cutting tool are provided. In the methods, the cutting tool comprises tungsten carbide and has a cutting edge with a radius of curvature of no more than about 1 ?m. The methods can comprise seeding a cutting surface of the cutting tool with a diamond nanopowder, the cutting surface having a reduced cobalt content, and depositing a nanocrystalline diamond film having a thickness of no more than about 1 ?m onto the seeded cutting surface. The methods can also comprise implanting carbon ions into a cutting surface of the cutting tool to provide a carbide rich cutting surface and depositing a nanocrystalline diamond film having a thickness of no more than about 1 ?m onto the carbide-rich cutting surface.

Abstract: The invention is a method for growing a critical adherent diamond layer on a substrate by Chemical Vapor Deposition (CVD) and the article produced by the method. The substrate can be a compound semiconductor coated with an adhesion layer. The adhesion layer is preferably a dielectric, such as silicon nitride, silicon carbide, aluminum nitride or amorphous silicon, to name some primary examples. The typical thickness of the adhesion layer is one micrometer or less. The resulting stack of layers, (e.g. substrate layer, adhesion layer and diamond layer) is structurally free of plastic deformation and the diamond layer is well adherent to the dielectric adhesion layer such that it can be processed further, such as by increasing the thickness of the diamond layer to a desired level, or by subjecting it to additional thin film fabrication process steps. In addition to preventing plastic deformation of the layer stack, the process also reduces the formation of soot during the CVD process.

Abstract: Methods of evaluating a superabrasive volume or a superabrasive compact are disclosed. One method may comprise exposing a superabrasive volume to beta particles and detecting a quantity of scattered beta particles. Further, a boundary may be perceived between a first region and a second region of the superabrasive volume in response to detecting the quantity of scattered beta particles. In another embodiment, a boundary between a catalyst-containing region and a catalyst-diminished region of a polycrystalline diamond volume may be perceived. In a further embodiment, a boundary may be perceived between a catalyst-containing region and a catalyst-diminished region of a polycrystalline diamond compact. Additionally, a depth to which a catalyst-diminished region extends within a polycrystalline diamond volume of a polycrystalline diamond compact may be measured in response to detecting a quantity of scattered beta particles. A system configured to evaluate a superabrasive volume is disclosed.

Abstract: One embodiment of the forming a nanocrystalline diamond-structured carbon layer on a silicon carbide layer comprises providing a silicon carbide layer in a reaction chamber and exposing the silicon carbide layer to a chlorine containing gas for an exposure time period to form a nanocrystalline diamond-structured carbon layer from the silicon carbide layer.

Abstract: A diamond thin film coating method is provided that enables, with no need for an intermediate layer, the formation of a diamond thin film, which has conventionally been considered difficult because cobalt contained in a binding phase of a cemented carbide provides a catalysis for the formation of graphite. Cobalt in a binding phase (11) present in a surface of a cemented carbide substrate member comprised of a hard phase of a carbide (2) and a binding phase (1) containing cobalt, is silicidated into silicide (3), and thereafter the diamond thin film is formed.

Abstract: A diamond film formation method includes forming, in a composite of a metal material and a semiconductor material, diamond nuclei on a surface of the metal material at a temperature below 650° C. in a first mixed gas containing at least carbon and hydrogen, and growing the diamond nuclei formed in the composite at a temperature below 750° C. in a second mixed gas containing at least carbon and hydrogen to form a diamond film.

Abstract: A method of depositing a stable diamond film on a metal substrate includes pretreating a surface of the substrate and depositing a diamond film on the substrate by way of a multi-stage chemical vapor deposition, in which each subsequent stage is performed at progressively higher temperature. The deposited diamond may be doped with boron. The substrate may be titanium, a titanium alloy, iron, an iron alloy, or any other valve metal. The diamond deposition may be a high temperature chemical vapor deposition. The first deposition stage may optionally create a carbide of diamond and substrate, and an optional mixture of diamond and amorphous carbon may be deposited to bond this carbide layer to a subsequently applied layer. The resulting product may be used as an electrode, as a tooth or blade in a cutting tool, or may have many other uses.

Abstract: This invention provides a method for fabricating geometrical diamond/matrix composites where all or a part of surfaces of the matrix are covered with a diamond film, and to fabricate hollow diamond shells using the composites where a part is uncoated with a diamond film. Hollow diamond shells were prepared by etching out of the matrix soluble with chemicals through an opening, a zone on the matrix, uncoated with diamond film. By changing the shape and the size of the geometrical matrixes, various kinds of diamond/matrix composites and diamond shells in shape and in size can be fabricated. The sizes available are between 200 nm and 2 mm.

Abstract: A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.

Abstract: A polycrystalline diamond compact (PDC) cutter having a body of diamond crystals containing cobalt is coated with Teflon which is impervious to hydrofluoric acid. After the Teflon coating is dried, a segment of the Teflon coating is removed and a mixture of 50% hydrofluoric acid and 50% nitric acid is supplied to the diamond crystal body through the template in the Teflon coating to leach out the cobalt catalyzing material contained within the body of diamond crystals. In an alternative embodiment, a similar process is used to coat a PDC drill bit and the PDC cutters mounted in the PDC drill bit. After the Teflon dries, a segment of the coating is removed and the acid mix is applied through the templates in the cutters to leach out the cobalt in each of the bodies of diamond crystals. In another alternative embodiment, a tube is placed over the PDC cutter, the tube having one or more templates exposing only the segment or segments of the cutting surface to the acid mix.

Abstract: A method of producing CVD diamond having a high colour, which is suitable for optical applications, for example. The method includes adding a gaseous source comprising a second impurity atom type to counter the detrimental effect on colour caused by the presence in the CVD synthesis atmosphere of a first impurity atom type. The described method applies to the production of both single crystal diamond and polycrystalline diamond.

Abstract: Briefly described, methods of forming diamond are described. A representative method, among others, includes: providing a substrate in a reaction chamber in a non-magnetic-field microwave plasma system; introducing, in the absence of a gas stream, a liquid precursor substantially free of water and containing methanol and at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one, into an inlet of the reaction chamber; vaporizing the liquid precursor; and subjecting the vaporized precursor, in the absence of a carrier gas and in the absence in a reactive gas, to a plasma under conditions effective to disassociate the vaporized precursor and promote diamond growth on the substrate in a pressure range from about 70 to 130 Torr.

Abstract: Single crystal CVD diamond is heated to temperatures of 1500° C. to 2900° C. under a pressure that prevents significant graphitization. The result is a CVD diamond with improved optical properties.