Abstract: A method of forming an insulating film containing silicon oxy-nitride first forms a silicon oxide film on the surface of a silicon wafer by oxidizing the water. In this oxidation, the atmosphere in a process chamber accommodating the silicon wafer is set at a first temperature of from 700 to 950° C. and a first pressure of from 0.7 to a value of [atmospheric pressure −0.375] Torr for a first processing time of from 0.5 to 30 min, and a first processing gas for oxidation is supplied into the process chamber. This first processing gas contains 1 to 5 vol % of water vapor and 95 to 99 vol % of nitrogen gas. After the silicon oxide film is formed, annealing is performed to convert at least a portion of the silicon oxide film into silicon oxy-nitride. In this annealing, the atmosphere in the process chamber is set at a second heating temperature of from 800 to 950° C. and a second pressure of from 0.

Abstract: A semiconductor substrate is placed within a housing. By supplying organometallic complexes and carbon dioxide in a supercritical state into the housing, a BST thin film is formed on a platinum thin film, while at the same time, carbon compounds, which are produced when the BST thin film is formed are removed. The solubility of carbon compounds in the supercritical carbon dioxide is very high, and yet the viscosity of the supercritical carbon dioxide is low. Accordingly, the carbon compounds are removable efficiently from the BST thin film. An oxide or nitride film may also be formed by performing oxidation or nitriding at a low temperature using water in a supercritical or subcritical state, for example.

Abstract: This method of prevention of particle pollution in a pre-clean chamber includes an oxygen gas supplying step for injecting oxygen gas into the pre-clean chamber; and a plasma generating step for ionizing the oxygen gas into plasma so as to interact with silicon-rich oxide to form a silicon oxide layer in the pre-clean chamber. The method according to the invention could prevent particle pollution due to peeling-off of silicon-rich oxide in a pre-clean chamber so as to prolong the life of a bell-jar therein.

Abstract: A metal suicide film and method of forming the same are provided. The method comprises depositing metal silicide layers onto a substrate assembly with alternating layers of silicon. The resulting metal silicide film has a disrupted grain structure and smaller grain sizes than prior art films of the same thickness, which increases the resistance of the material to stress cracks in subsequent thermal processing and reduces the overall residual stress of the material.

Abstract: A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.

Abstract: A method of modifying a surface is disclosed. The method includes contacting the surface with a hydridosilane under conditions and for a time sufficient to form a covalent bond between a silicon atom of the hydridosilane and the oxygen atom of a hydroxyl group on the surface. The hydridosilane has the formula where at least one of Ra, Rb, Rc, and Rd is H, and at least one of Ra, Rb, Rc, and Rd is not H.

Abstract: A rod-form high-purity polycrystalline silicon capable of preventing defects from occurring to a newly deposited silicon layer. To this end, a method of producing a rod-form high-purity polycrystalline silicon, depositing silicon on a rod-form silicon core by a thermal decomposition of a silane gas includes the steps of coating the rod-form silicon core to be used with a specific silicon layer by previously depositing any one kind of silicon layer of an amorphous silicon layer and a polycrystalline silicon layer made up of fine particles of silicon with different crystal axes from one another on a surface of the rod-form silicon core to be used by vapor growth, and depositing polycrystalline silicon by using the core coated with the specific silicon layer.

Abstract: A method of forming an organosilicate layer is disclosed. The organosilicate layer is formed by reacting a gas mixture comprising a phenyl-based alkoxysilane compound. The gas mixture may be reacted by applying an electric field thereto. The gas mixture may optionally include an organosilane compound as well as an oxidizing gas. The organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the organosilicate layer is used as an anti-reflective coating (ARC). In another integrated circuit fabrication process, the organosilicate layer is used as a hardmask. In yet another integrated circuit fabrication process, the organosilicate layer is incorporated into a damascene structure.

Abstract: The present invention provides a method of depositing a carbon doped silicon oxide film having a low dielectric constant (k). A process gas mixture containing at least a carrier gas, an oxidizer, a carbon gas source, or combinations thereof, is supplied adjacent an edge of a substrate though a purge gas inlet in a substrate support to facilitate deposition of low k carbon doped silicon oxide film having a greater concentration of silicon oxide around the edge of the substrate than an inner portion of the substrate.

Abstract: A silicon article including a silicon base and columns extending from the silicon base. The columns define a gap between the columns which is devoid of material so that the article can act as a filter or heat sink. Also disclosed is a method of making the silicon article.

Abstract: A method of forming a titanium silicide nitride (TiSiN) layer on a substrate id described. The titanium silicide nitride (TiSiN) layer is formed by providing a substrate to a process chamber and treating the substrate with a silicon-containing gas. A titanium nitride layer is formed on the treated substrate and exposed to a silicon-containing gas. The titanium nitride (TiN) layer reacts with the silicon-containing gas to form the titanium silicide nitride (TiSiN) layer. The formation of the titanium silicide nitride (TiSiN) layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the titanium silicide nitride (TiSiN) layer may be used as a diffusion barrier for a tungsten (W) metallization process.

Abstract: An embodiment of the present invention provides methods for forming a carbon-containing layer having a low dielectric constant and good gap-fill capabilities. A method includes depositing a carbon-containing layer on a substrate and transforming the carbon-containing layer to remove at least some of the carbon. The transforming step may include annealing the carbon-containing layer in a furnace containing a hydrogen atmosphere, for example. The carbon-containing layer may be a carbon-doped silicon oxide material, where the transforming step changes the carbon-doped silicon oxide. Additionally, the method may include subjecting the annealed layer to a hydrogen and/or low oxygen plasma treatment to further remove carbon from the layer. Additionally, a step of adding a capping layer to the annealed, plasma treated material is provided.

Abstract: The process comprises the following steps: a) pretreatment of a surface of the substrate by means of a cold gas plasma at low or medium pressure in order to clean the said surface; b) growth, from the said cleaned surface of the substrate, of a nitride barrier layer by means of a cold gas plasma made up of an N2/H2 mixture at low or medium pressure; and c) deposition, on the nitride barrier layer, of a Ta2O5 dielectric layer by chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD).

Abstract: A silicon oxide powder represented by the formula: SiOx wherein 1.05≦x≦1.5 and having a BET specific surface area of 5-300 m2/g is useful as a negative electrode material to construct a lithium ion secondary cell having a high capacity and improved cycle performance.

Abstract: A heat treatment method for heat treating a thin film is a method for heat treating the thin film having a metallic silicide layer, comprising a heating step, a temperature keeping step and a cooling step. Among these steps, the thin film is heated in an atmosphere of gas which is oxidizing gas or includes oxidizing gas at least in the heating step. An oxide film is formed on the thin film in the heating step to prevent the phosphorous atoms from escaping.

Abstract: Method of modifying the surface properties of a substrate by depositing a coating of hydrogenated amorphous silicon on the surface of the substrate and functionalizing the coated substrate by exposing the substrate to a binding reagent having at least one unsaturated hydrocarbon group under pressure and elevated temperature for an effective length of time. The hydrogenated amorphous silicon coating is deposited by exposing the substrate to silicon hydride gas under pressure and elevated temperature for an effective length of time.

Abstract: The invention provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes that include one or more organofluoro silanes selected from: (a) an organofluoro silane containing two silicon atoms linked by one oxygen atom; (b) an organofluoro silane containing two silicon atoms linked by one or more carbon atoms, where the one or more carbon atoms each are bonded to one or more fluorine atoms, or to one or more organofluoro moieties, or to a combination thereof; and (c) an organofluoro silane containing a silicon atom bonded to an oxygen atom. The invention also provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes that include one or more organofluoro silanes characterized by the presence of Si—O bonds.

Abstract: A method for near atmospheric pressure chemical vapor deposition of a silicon based film onto a substrate includes introducing into a deposition chamber at about atmospheric pressure: (i) a substrate; (ii) an iodosilane precursor in the vapor state having at least three iodine atoms bound to silicon; and (iii) at least one reactant gas; and maintaining a deposition temperature within the chamber from about 250° C. to about 650° C. for a period of time sufficient to deposit a silicon based film on the substrate. Silicon based films formed by near atmospheric pressure chemical vapor deposition using an iodosilane precursor in a vapor state and methods for forming silicon-based films using ultraviolet assisted chemical vapor deposition are also included.

Abstract: Vacuum treatment installation with a vacuum treatment chamber containing a plasma discharge configuration as well as a gas supply configuration. The plasma discharge configuration has at least two plasma beam discharge configurations with substantially parallel discharge axes and a deposition configuration is positioned along a surface which extends at predetermined distances from the beam axes and along a substantial section of the longitudinal extent of the discharge beam.

Abstract: Wood products, specifically wood commonly used in construction including dimension lumber, pressure treated pine, composite wood materials such as plywood, particle board, and wafer board, and samples of paper and fabric were variously treated with concentrations of sodium silicate (Na2O.SiO2) also known as water glass. Cellulosic materials including dimension lumber, plywood, particle board, wafer board, paper, and fabric were treated with sodium silicate (Na2O.SiO2) in concentrations ranging from 400-0.04 g Na2O.SiO2/kg water. To overcome the disadvantages of sodium silicate, sodium silicate treated samples were further treated to convert the water soluble sodium silicate to a water insoluble form, thereby overcoming the disadvantages of water solubility. and rendering the material effective for internal and external uses.

Abstract: According to an exemplary embodiment of the invention, a method of forming a plurality of layers on an article comprises steps of generating a plasma by forming an arc between a cathode and an anode; injecting a first material comprising an organic compound into the plasma to deposit a first layer on the article; injecting a second material comprising an organometallic material into the plasma to form a second layer on the first layer; and injecting a third material comprising a silicon containing organic compound into the plasma to deposit a third layer on the second layer. The invention also relates to an article of manufacture comprising a substrate; an interlayer disposed on the substrate; a second layer disposed on the interlayer, the second layer comprising an inorganic ultraviolet absorbing material; and a third layer disposed on the second layer, the third layer comprising an abrasion resistant material.

Abstract: The invention discloses a method for producing a nitrogen-silicon containing stainless steel layer on a metal. The method includes a pack cementation process involving the use of silicon nitride, silica and sodium fluoride as the source materials.

Abstract: Silicon dioxide thin film have been deposited at temperatures from 25° C. to 250° C. by plasma enhanced chemical vapor deposition (PECVD) using tetramethylsilane (TMS) as the silicon containing precursor. At these temperatures, the PETMS oxide films have been found to exhibit adjustable stress and adjustable conformality. Post deposition annealing in forming gas at or below the deposition temperatures has been shown to be very effective in improving the PETMS oxide properties while preserving the low temperature aspect of the PETMS oxides.

Abstract: This invention discloses methods for the deposition of SiO2 and other oxide dielectric materials using a near room temperature thermal chemical vapor deposition process. The films have chemical, physical, optical, and electrical properties similar to or better than those of oxide films deposited using conventional, high temperature thermal CVD methods. The films of the invention are useful in the manufacture of semiconductor devices of sub-micron feature size and for food packaging.

Abstract: A method of monitoring the conditions during chemical vapor deposition. First, a first substrate is provided. A first oxide layer is formed over the first substrate and then a first silicon nitride layer is deposited over the first oxide layer under a set of depositing conditions. The first silicon nitride layer is removed so that the remaining first oxide layer can serve as a first measuring oxide layer. The interface trap density of the first measuring oxide layer is measured to obtain a first interface trap density. A second substrate is provided. A second oxide layer is formed over the second substrate. After setting the depositing conditions identical to the set of depositing conditions for depositing the first silicon nitride layer over the first substrate, a second silicon nitride layer is deposited over the second oxide layer. The second silicon nitride layer is performed under an actual set of depositing conditions.

Abstract: Multilayer thin films consisting of alternating layers of oxide and organic polymer dielectric materials are manufactured by chemical vapor deposition using a CVD apparatus comprising separate precursor volatilization/dissociation areas. Methods are described for the manufacture of multilayered films. The electrical properties of the multilayered films make the films of embodiments of this invention suitable for use as dielectric materials for semiconductor manufacture. The multilayered films of embodiments this invention reduce RC delay and cross-talk, thereby permitting increased density, higher frequency performance and greater reliability of semiconductor devices for use in the electronics industry.

Abstract: This invention is a high strength, thermal shock resistant, high purity siliconized silicon carbide material made from siliconizing a converted graphite SiC body having at least 71 vol % silicon carbide therein.

Abstract: To provide a process for producing a semiconductor, which can form a CVD film at a high film-forming rate with a good step coverage, good uniformities of film forming rate and sheet resistance in the in-plane region of a wafer and a good reproducibility at every wafers, and an apparatus for treating a semiconductor for the process. In a treating chamber kept under pressure of 1,000-50,000 Pa, a wafer is placed on a susceptor, and a film is deposited on the wafer by heating the wafer at 500° C. or higher by a plate-shaped heater through the susceptor, while supplying a feed gas into the treating chamber at 500-50,000 sccm through gas injection nozzles provided near the center of a shower plate provided approximately in parallel with the wafer at a distance of 1-20 mm from the wafer and kept at a temperature of 200° C. or lower.

Abstract: A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a rotating silicon semiconductor substrate to grow a thin film on a surface of said silicon semiconductor substrate in a method of chemically growing a thin film that a thin film-growing reaction is done wherein: monosilane gas is used as an effective component of the material gas to grow the thin film under a reduced pressure of from 2.7×102 to 6.7×103 Pa with the number of rotations of said silicon semiconductor substrate being from 500 to 2000 min−1 and at a reaction temperature of from 600° C. to 800° C.

Abstract: A method for forming silicon oxide layers on silicon wafers by a wet oxidation process that utilizes a dual-stage pyrolysis is described. The process can be carried out by flowing a first H2/O2 mixture that has a first H2/O2 gas mixture ratio into a torch and then feeding water vapor generated into the wet oxidation chamber to form a first layer of silicon oxide, and then flowing a second H2/O2 mixture that has a second H2/O2 gas mixture ratio into the torch and feeding water vapor generated into the wet oxidation chamber for forming a second thickness of the silicon oxide layer. The second H2/O2 ratio is smaller than the first H2/O2 ratio by at least ⅓ of the value of the first H2/O2 ratio. For instance, when the first H2/O2 ratio used is large than 1.5, the second H2/O2 ratio used is less than 1.2. In one example, the first H2/O2 gas mixture ratio utilized is 1.8, while the second H2/O2 gas mixture ratio utilized is 1.0. It has been found that by reducing the hydrogen content, i.e.

Abstract: A method and apparatus, and product by process, for the production of bulk polysilicon by a chemical vapor deposition process on a removable tube section. A quartz envelope and base plate form a CVD reactor enclosure, with external radiant heaters providing process heat through the wall of the reactor, and with process gas inlet and outlet ports located in the base plate. A tube section, preferably an EFG silicon tube-section, vertically emplaced on the base plate and capped to close the top is used as the reaction chamber. During the CVD process, deposition occurs on the inside surface of the chamber tube, the inner diameter of the deposit layer becoming increasingly smaller as the yield accumulates. In a two tube reactor, a smaller diameter, vertical middle tube is uniformly spaced and supported inside the chamber tube for fall flow of process gas over and under the middle tube so that deposition occurs on the three exposed tube surfaces.

Abstract: A process capable of forming a silicon film on a substrate efficiently, for example, at a high yield and a high forming rate with simple operation and device unlike CVD and plasma CVD.

Abstract: A substrate is coated with a hydrophobic coating system including highly tetrahedral amorphous carbon that is a form of diamond-like carbon (DLC). In certain embodiments, the coating system is deposited on the substrate in a manner to increase its hydrophobicity. In certain embodiments, the coating system is deposited in a manner such that it has an average hardness of at least about 10 GPa, more preferably from about 20-80 GPa. In certain embodiments, the coating system includes first and second DLC inclusive layers that are deposited using one or more ion beam deposition devices, wherein different gases are used to deposit the respective DLC inclusive layers such that the overlying layer has greater scratch resistance characteristics than the underlying layer which functions as an anchoring layer.

Abstract: Silicon dioxide (SiO2) films are deposited at room temperature using a chemical vapor deposition (CVD) reaction catalyzed by ammonia or a Lewis base. The SiO2 film growth is accomplished through the reaction of water and certain silicon precursors. Examples of these reactions include the SiCl4+2H2O→SiO2+4HCl or Si(OR)4+2H2O→SiO2+4ROH reactions and catalyzed with ammonia (NH3) or other Lewis bases. The NH3 catalyst lowered the required temperature for SiO2 CVD from >900 K to 313-333 K and reduced the SiCl4 and H2O pressures required for efficient SiO2 CVD from several Torr to <500 mTorr.

Abstract: A thin film layer can be formed on a glass substrate by preheating the substrate, depositing an amorphous silicon precursor layer on the substrate at a first temperature, and annealing the substrate in a thermal processing chamber at a second temperature sufficiently higher than the first temperature to substantially reduce the hydrogen concentration in the precursor layer. The preheating and annealing steps can occur in the same thermal processing chamber. Then the precursor layer is converted to a polycrystaline silicon layer by laser annealing.

Abstract: In a deposited-film formation method or apparatus according to the present invention, which comprises providing a discharge electrode in a vacuum vessel equipped with exhaust means, supplying a hydrogen gas and a raw material gas for forming a deposited film which contains at least an Si element, generating plasma from the material gas by supplying high frequency electric power to the discharge electrode, and forming a deposited film on a substrate in the vacuum vessel by plasma CVD, wherein an auxiliary electrode is arranged in plasma in the vacuum vessel, a periodically changing voltage is applied to the auxiliary electrode without causing a discharge to form a deposited film, whereby it is possible to form an amorphous-silicon-based deposited film having good quality and good uniformity over a large area at a high rate of film formation.

Abstract: In a method of forming a silicon oxide film, the silicon oxide film is formed on a substrate by the use of a plasma CVD method. A plasma-generating region is separated from a deposition region which includes excitation oxygen molecules and excitation oxygen atoms. Plasma of first gas containing oxygen atoms is formed in the plasma-generating region while second gas containing silicon atoms is supplied into the deposition region. First quantity of the excitation oxygen molecules and second quantity of the excitation oxygen atoms are controlled intentionally.

Abstract: A packaging laminate (10) including a substrate film (15) coated with a carbon containing silicon oxide layer (16, 17) on both surfaces is disclosed herein. A method for producing the laminate (10), and blanks and packages fabricated from the laminate are also disclosed herein. The PECVD process of the present invention strains the substrate film (15) during deposition thereby creating a very thin oxide layer with superior durability, oxygen and aroma barrier properties. The carbon-containing silicon oxide coating (16, 17) has a stoichiometry of SiOxCy in which x is witin the range of 1.5-2.2 and y is within the range of 0.15-0.80. The substrate film (15) may include a core layer (12) of a material selected from the group consisting of paper, paperboard, a foamed core, polyethylene terephtalate, polyamide, polyethylene and polypropylene.

Abstract: Multilayer deposition of thin films onto glass substrates to form thin film transistors can be carried out in the same chamber under similar reaction conditions at high deposition rates. We have found that sequential thin layers of silicon nitride and amorphous silicon can be deposited in the same chamber by chemical vapor deposition using pressure of at least 0.5 Torr and substrate temperatures of about 250-370° C. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single multichamber vacuum system.

Abstract: The novel method allows monitoring of nitrogen processes by making use of the fact that the incorporation of nitrogen near the surface in silicon, or in a thin silicon nitride layer on the silicon surface, inhibits the diffusion of oxygen during the subsequent thermal oxidation. Accordingly, the oxidation rate of the thermal oxidation is reduced and the growth of the oxide layer on the silicon surface is inhibited. The thickness of the oxide layer is thus used as a measure for the nitrogen content, i.e., for the quality of the nitrogen process.

Abstract: A substrate is coated with a hydrophobic coating system including diamond-like carbon (DLC) and at least one fluoro-alkyl silane (FAS) compound. In certain embodiments, the coating system includes an FAS inclusive layer provided over at least one DLC inclusive layer in order to increase the initial contact angle of the coated article. At least the FAS inclusive layer may be heated (i.e., thermally cured) to an extent sufficient to at least one of: (a) improve the initial contact angle &thgr; of the resulting coated article, (b) render the hydrophobic nature of the resulting coated article more stable when exposed to solution(s)/material(s) such as hexane and/or isopropyl alcohol, and/or (c) improve bonding characteristics of the FAS inclusive layer within itself and/or between the FAS inclusive layer and a layer immediately beneath it.

Abstract: Dry processes for coating titania particles, as well as the coated titania particles produced thereby, are provided. In the subject processes, a moving bed of titania particles is contacted with a gaseous first reactant under conditions sufficient for the first reactant to adsorb on the surface of the particles. Next, the particles having the first reactant adsorbed to their surface are contacted with a gaseous second reactant under conditions such that the second reactant reacts with the surface adsorbed first reactant to produce a product on the surface and in turn yield titania particles coated with a compact layer of the resultant product. The resultant coated titania particles find use in a variety of applications, including as pigments in paints and cosmetics.

Abstract: Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g.

Abstract: Silicon carbide fibers having an excellent mechanical strength and a superior heat resistance can be produced by the process in which activated carbon fibers having a thickness of 1 to 30 &mgr;m and a BET specific surface area of 700 to 1500 m2/g are reacted with a silicon and/or silicon oxide gas at 1200 to 1500° C. under a reduced pressure or in an inert gas atmosphere; and the resultant SiC fibers are heat treated in the presence of a boron-containing substance and optionally a carbon-containing substance at 1700 to 2300° C. in an inert gas atmosphere, wherein the fibers may be in the form of a shaped article, for example, a sheet or honeycomb structure.

Abstract: In a method of forming a film, the supply of a reaction gas is started at a first flow rate into a chamber in which a plasma is formed, such that an initial film is formed on a wafer. Then, the supply of the reaction gas is started at a second flow rate into the chamber in which the plasma is formed, such that the film is formed on the initial film, the first flow rate being smaller than the second flow rate.

Abstract: A method for making a multi-layered integrated circuit structure, includes depositing a methyl compound spin on glass layer over a substrate. The spin on glass layer is treated by plasma-deposition to form a SiO2 skin on the methyl compound spin on glass layer and then treated again by plasma-deposition to form a cap layer which adheres to the SiO2 skin.

Abstract: A method for filling gaps in high aspect ratio patterned features on an integrated circuit using plasma CVD processes. A plasma is generated by an inert gas and process gases including silicon and oxygen components. The plasma causes the product gases to react and deposit onto the substrate and concurrently etch the deposited film. During an initial stage, the net deposition rate is kept low to improve filling of the high aspect ratio features, while during one or more later stages the net deposition rate is increased to provide a more conformal film at a higher throughput.

Abstract: A thin film layer can be formed on a glass substrate by preheating the substrate, depositing an amorphous silicon precursor layer on the substrate at a first temperature, and annealing the substrate in a thermal processing chamber at a second temperature sufficiently higher than the first temperature to substantially reduce the hydrogen concentration in the precursor layer. The preheating and annealing steps can occur in the same thermal processing chamber. Then the precursor layer is converted to a polycrystaline silicon layer by laser annealing.

Abstract: A method for filling a trench within a silicon substrate. There is first provided a silicon substrate having a trench formed therein. There is then formed upon the substrate and within the trench a gap filling silicon oxide trench fill layer employing an ozone assisted thermal chemical vapor deposition (SACVD) method. There is then carried out a densification of the gap filling silicon oxide trench fill layer by annealing in an oxidizing atmosphere at an elevated temperature. Finally, the gap filling silicon oxide trench fill layer is planarized by chemical mechanical polish (CMP) planarization to form the silicon oxide trench filling layer with attenuated surface sensitivity and with an enhanced bulk quality and reduced trench recess at corners.

Abstract: A method for high rate silicon deposition at low pressures, including a method of operating a CVD reactor having a high degree of temperature and gas flow uniformity, the method of operation providing a novel combination of wafer temperature, gas flow and chamber pressure. According to the method, a substrate is placed in a vacuum chamber wherein a reactant gas is provided at a high velocity in parallel with the substrate via a plurality of temperature controlled gas injectors providing a condition wherein the deposition rate is only limited by the rate of delivery of unreacted gas to the substrate surface and the rate of removal of reaction byproducts. The novel combination of process conditions moves the reaction at the wafer surface into the regime where the deposition rate exceeds the crystallization rate, resulting in very small crystal growth and therefore a very smooth polysilicon film with a surface roughness on the order of 5-7 nm for films 2500 angstroms thick.