Abstract: A method of forming an A site deficient thin film manganate material on a substrate from corresponding precursor(s), comprising liquid delivery and flash vaporization thereof to yield a precursor vapor, and transporting the precursor vapor to a chemical vapor deposition reactor for formation of an A site deficient manganate thin film on a substrate. The invention also contemplates a device comprising an A site deficient manganate thin film, wherein the manganate layer is formed on the substrate by such a process and is of the formula LaxMyMnO3, where M=Mg, Ca, Sr, or Ba, and (x+y)<1.0, and preferably from about 0.5 to about 0.99.

Abstract: The invention a chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer having a varied concentration of barium and strontium, and/or titanium, within the layer. A substrate is positioned within a chemical vapor deposition reactor. Barium and strontium are provided within the reactor by flowing at least one metal organic precursor to the reactor. Titanium is provided within the reactor. One or more oxidizers are flowed to the reactor. In one aspect, conditions are provided within the reactor to be effective to deposit a barium strontium titanate comprising dielectric layer on the substrate from the reactants.

Abstract: A method for providing activated species for a cyclical deposition process is provided. In one aspect, the method includes delivering a gas to be activated into a plasma generator, activating the gas to create a volume of reactive species, delivering a fraction of the reactive species into a processing region to react within a substrate therein, and maintaining at least a portion of the the gas remaining in the plasma generator in an activated state after delivering the fraction of the gas into the process region. The plasma generator may include a high density plasma (HDP) generator, a microwave generator, a radio-frequency (RF) generator, an inductive-coupled plasma (ICP) generator, a capacitively coupled generator, or combinations thereof.

Abstract: An article protected by a thermal barrier coating system includes a substrate having a substrate surface, and a thermal barrier coating system overlying the substrate. The thermal barrier coating system has a thermal barrier coating formed of a thermal barrier coating material arranged as a plurality of columnar grains extending generally perpendicular to the substrate surface and having grain surfaces. A sintering inhibitor is within the columnar grains, either uniformly distributed or concentrated at the grain surfaces. The sintering inhibitor is lanthanum oxide, chromium oxide, and/or yttrium chromate, mixtures thereof, or mixtures thereof with aluminum oxide.

Abstract: The invention includes chemical vapor deposition and physical vapor deposition methods of forming high k ABO3 comprising dielectric layers on a substrate, where “A” is selected from the group consisting of Group IIA and Group IVB elements and mixtures thereof, and where “B” is selected from the group consisting of Group IVA metal elements and mixtures thereof. In one implementation, a plurality of precursors comprising A, B and O are fed to a chemical vapor deposition chamber having a substrate positioned therein under conditions effective to deposit a high k ABO3 comprising dielectric layer over the substrate. During the feeding, pressure within the chamber is varied effective to produce different concentrations of A at different elevations in the deposited layer and where higher comparative pressure produces greater concentration of B in the deposited layer.

Abstract: A masking material and a method for applying the masking material to preselected surfaces of a component to protect the surfaces to which the masking material is applied from exposure to a vapor phase of aluminum gas while a protective environmental coating is applied to other surfaces of the component. The component, such as found in the hot section of a gas turbine engine, typically has intricate internal passageways. A ceramic material is applied as a mask over preselected surfaces while leaving remaining surfaces of a component exposed. The component typically is a superalloy component, and the exposed surfaces are to be coated with an environmental protective coating. The surfaces are preselected on the basis of whether coating is desired on the surface. The ceramic material forms a continuous, crack-free mask on these preselected surfaces without obstructing the internal passageways. The ceramic material which forms a mask is stable at the elevated temperatures of environmental coating application.

Abstract: A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, or wherein M is Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, or Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from H, aryl, perfluoroaryl, C1-C8 alkyl, C1-C8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSiAy(NR1R2)4-x-y or wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, and C1-C8 perfluoroalkyl; and n is from 1-6. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.

Abstract: An electron beam physical vapor deposition (EBPVD) apparatus and a method for using the apparatus to produce a coating material (e.g., a ceramic thermal barrier coating) on an article. The EBPVD apparatus generally includes a coating chamber that is operable at elevated temperatures and subatmospheric pressures. An electron beam gun projects an electron beam into the coating chamber and onto a coating material within the chamber, causing the coating material to melt and evaporate. An article is supported within the coating chamber so that vapors of the coating material deposit on the article. The operation of the EBPVD apparatus is enhanced by the inclusion or adaptation of one or more mechanical and/or process modifications, including those necessary or beneficial when operating the apparatus at coating pressures above 0.010 mbar.

Abstract: An anti-static, anti-reflection, transparent coating for a transpatent substrate, the coating including at least one electrically conductive layer, wherein the sheet resistance of the coating is less than about 1010 ohm/square. The coating is preferably higher transparent.

Abstract: Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy).

Abstract: The invention comprises a chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer. A substrate is positioned within a reactor. Barium and strontium are provided within the reactor by flowing at least one metal organic precursor to the reactor. Titanium is provided within the reactor. At least one oxidizer is flowed to the reactor under conditions effective to deposit a barium strontium titanate comprising dielectric layer on the substrate. In one implementation, the oxidizer comprises H2O. In one implementation, the oxidizer comprises H2O2. In one implementation, the oxidizer comprises at least H2O and at least another oxidizer selected from the group consisting of O2, O3, NOx, N2O, and H2O2, where “x” is at least 1. In one implementation, the oxidizer comprises at least H2O2 and at least another oxidizer selected from the group consisting of O2, O3, NOx, and N2O, where “x” is at least 1.

Abstract: A niobium doped tin oxide coating is applied onto a glass substrate to produce a low emissivity (low E) glass. The coating can optionally be doped with both niobium and other dopant(s), such as fluorine. The low emissivity glass has properties comparable or superior to conventional low E glass with fluorine doped tin oxide coatings.

Abstract: An article protected by a thermal barrier coating system includes a substrate having a substrate surface, and a thermal barrier coating system overlying the substrate. The thermal barrier coating system has a thermal barrier coating formed of a thermal barrier coating material arranged as a plurality of columnar grains extending generally perpendicular to the substrate surface and having grain surfaces. A sintering inhibitor is within the columnar grains, either uniformly distributed or concentrated at the grain surfaces. The sintering inhibitor is lanthanum oxide, lanthanum chromate, chromium oxide, and/or yttrium chromate, mixtures thereof, mixtures thereof with aluminum oxide, modifications thereof wherein cobalt or manganese is substituted for chromium, precursors thereof, and reaction products thereof.

Abstract: The invention includes chemical vapor deposition and physical vapor deposition methods of forming high k ABO3 comprising dielectric layers on a substrate, where “A” is selected from the group consisting of Group IIA and Group IVB elements and mixtures thereof, and where “B” is selected from the group consisting of Group IVA metal elements and mixtures thereof. In one implementation, a plurality of precursors comprising A, B and O are fed to a chemical vapor deposition chamber having a substrate positioned therein under conditions effective to deposit a high k ABO3 comprising dielectric layer over the substrate. During the feeding, pressure within the chamber is varied effective to produce different concentrations of A at different elevations in the deposited layer and where higher comparative pressure produces greater concentration of B in the deposited layer.

Abstract: The present invention relates to a cutting tool with increased tool life when machining grey cast iron. The tool comprises a solid CBN-containing body containing more than 60 vol % CBN and a coating. The coating consists of at least one layer of metal nitride, carbonitride or carbide with the metal elements selected from at least one of Ti, Nb, Hf, V, Ta, Mo, Zr, Cr, W and Al, with a total thickness of 2-7 &mgr;m and 2-8 &mgr;m of &agr;- and/or &kgr;-Al2O3. The coating is a CVD coating deposited at 900° C. or higher.

Abstract: A composite target is placed in a chamber. The target is in the form of a bar made of ceramic powder and it presents composition that is not uniform in the longitudinal direction. At least one substrate is introduced into the chamber in order to have formed thereon a ceramic coating with a composition gradient. The top face of the bar is swept by an electron beam so as to melt the bar material at its top face and form a vapor cloud in the chamber under low pressure. A bar is used that presents a plurality of superposed layers of different compositions, with the composition within each layer being uniform over the entire cross-section of the bar. Each layer of the bar comprises zirconia and at least one oxide selected from the oxides of nickel, cobalt, iron, yttrium, hafnium, cerium, lanthanum, tantalum, niobium, scandium, samarium, gadolinium, dysprosium, ytterbium, and aluminum.

Abstract: The present invention generally is a method for forming a high-k dielectric layer, comprising depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a hafnium precursor to a surface of the substrate, reacting the hafnium precursor and forming a hafnium containing layer to the surface, delivering a nitrogen precursor to the hafnium containing layer, forming at least one hafnium nitrogen bond and depositing the hafnium compound to the surface.

Abstract: A process for forming a thin metal oxide film is disclosed that comprises molding an amorphous powder of organic metal chelate complexes to obtain a target. The process also includes subjecting the target to a PVD process that forms the thin metal oxide.

Abstract: The invention a chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer having a varied concentration of barium and strontium, and/or titanium, within the layer. A substrate is positioned within a chemical vapor deposition reactor. Barium and strontium are provided within the reactor by flowing at least one metal organic precursor to the reactor. Titanium is provided within the reactor. One or more oxidizers are flowed to the reactor. In one aspect, conditions are provided within the reactor to be effective to deposit a barium strontium titanate comprising dielectric layer on the substrate from the reactants.

Abstract: An object of the present invention is to provide a liquid material for chemical vapor deposition (CVD), a method of forming a film by CVD and a CVD apparatus, capable of achieving film formation of a silicate compound of good quality. A liquid material for CVD includes an organometallic compound, a siloxane compound and an organic solvent for dissolving the organometallic compound and the siloxane compound. If the organometallic compound includes an alcoxyl group (e.g., tertialy-butoxyl group) having a larger number of carbon atoms than a propoxyl group or a &bgr;-diketone group (e.g., 2,2,6,6-tetramethyl-3,5-heptanedionate group), the stability in film formation is improved. As the organic solvent, diethyl ether, tetrahydrofuran, nor-octane, iso-octane and the like may be employed. As the siloxane compound, tri-metoxy-silane having a high degree of solubility in a nonsolar solvent and hexa-methyl-di-siloxane and octa-methyl-cycro-tetra-siloxane both having solubility in a polar solvent may be employed.

Abstract: An improved gas precursor delivery system for a deposition chamber is disclosed. The system includes, in a preferred embodiment, a shower head containing holes through which the gas precursors will be delivered to the deposition chamber. Each hole within the shower head has associated with it a flow regulating micromachine, such as a microvalve or micropump, for independently regulating the flow of the precursor into the deposition chamber, and if necessary, for vaporizing the source chemical. Each micromachine is preferably associated with a single precursor source, and hence precursor lines are not shared and thus do not need to be purged with the introduction of each new precursor, saving manufacturing time and decreasing wasted precursor gas. Precise control of precursors into the chamber via the micromachines allows film stochiometry and thickness to be carefully controlled.

Abstract: A method of operating an EBPVD apparatus (10) to deposit a ceramic coating on an article (20), such that the thermal conductivity of the coating is both minimized and stabilized. More particularly, the EBPVD apparatus (10) is operated to perform multiple successive coating operations which together constitute a coating campaign. During the campaign, the surface temperatures of the articles (20) being coated do not exceed about 1000° C. as a result of the combined heat transfer from the coating chamber (14) to the articles (20) being reduced during the course of the campaign, even though the temperature within the coating chamber (14) continuously rises during successive coating operations of the campaign. Ceramic coatings deposited at such relatively low temperatures exhibit lower and more stable thermal conductivities.

Abstract: A vapor-deposition material for the production of high-refractive-index optical layers of titanium oxide, titanium and lanthanum oxide under reduced pressure comprising a sintered mixture having the composition TiOx+z*La2O3, where x=1.5 to 1.8 and z=10 to 65% by weight, based on the total weight of the mixture. The constituents of the mixture are in the range of 10 to 65% by weight of lanthanum oxide, 38 to 74% by weight of titanium oxide and 2 to 7% by weight of titanium.

Abstract: An MOCVD process is provided for forming metal-containing films having the general formula M′xM″(1−x)MyOz, wherein M′ is a metal selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Y, Sc, Yb, Lu, and Gd; M″ is a metal selected from the group consisting of Mg, Ca, Sr, Ba, Pb, Zn, and Cd; M is a metal selected from the group consisting of Mn, Ce, V, Fe, Co, Nb, Ta, Cr, Mo, W, Zr, Hf and Ni; x has a value from 0 to 1; y has a value of 0, 1 or 2; and z has an integer value of 1 through 7. The MOCVD process uses precursors selected from alkoxide precursors, &bgr;-diketonate precursors, and metal carbonyl precursors in combination to produce metal-containing films, including resistive memory materials.

Abstract: Improved methods of forming PZT thin films that are compatible with industry-standard chemical vapor deposition production techniques are described. These methods enable PZT thin films having thicknesses of 70 nm or less to be fabricated with high within-wafer uniformity, high throughput and at a relatively low deposition temperature. In one aspect, a source reagent solution comprising a mixture of a lead precursor, a titanium precursor and a zirconium precursor in a solvent medium is provided. The source reagent solution is vaporized to form a precursor vapor. The precursor vapor is introduced into a chemical vapor deposition chamber containing the substrate. In another aspect, before deposition, the substrate is preheated during a preheating period. After the preheating period, the substrate is disposed on a heated susceptor during a heating period, after which a PZT film is formed on the heated substrate.

Abstract: Method for producing cutting tools provides a first hard material coating on a first region of a tool base body containing at least one cutting edge, using a plasma vacuum coating process. A second hard material coating is provided on a second region which is adjacent the first, also via plasma vacuum coating process. Hard material for the coatings is a carbide, oxide, oxicarbide, nitride, nitrocarbide, oxinitride or nitrooxicarbide of at least two of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Al. The first coating has a content of at least two of the metal elements which is at most 2 at % different from the content of the two metal elements in the second coating if the tool is for higher adhesive strength than hardness. The first coating has a content of the two metal elements that is different from the content of the two metal elements of the second coating by more than 2 at % if the tool is for higher hardness than high adhesive strength.

Abstract: A thermal barrier coating (TBC) system and method for forming the coating system on a component. The method generally entails forming a TBC on the surface of the component so that the TBC has at least an outer portion that is resistant to infiltration by CMAS. The TBC is formed by co-depositing first and second ceramic compositions by physical vapor deposition so that the entire TBC has columnar grains and at least the outer portion of the TBC is a mixture of the first and second ceramic compositions. The outer portion is preferably a continuation of the inner portion, such that the TBC is not characterized by discrete inner and outer coatings. The second ceramic composition serves to increase the resistance of the outer portion of the TBC to infiltration by molten CMAS. A platinum-group metal may be co-deposited with the first and second ceramic compositions, or deposited before the TBC and then diffused into the outer portion as a result of the parameters employed in the deposition process.

Abstract: A semiconductor substrate is placed within a housing. By supplying organometallic complexes and carbon dioxide in a supercritical state into the housing, a BST thin film is formed on a platinum thin film, while at the same time, carbon compounds, which are produced when the BST thin film is formed, are removed. The solubility of carbon compounds in the supercritical carbon dioxide is very high, and yet the viscosity of the supercritical carbon dioxide is low. Accordingly, the carbon compounds are removable efficiently from the BST thin film. An oxide or nitride film may also be formed by performing oxidation or nitriding at a low temperature using water in a supercritical or subcritical state, for example.

Abstract: A semiconductor substrate is placed within a housing. By supplying organometallic complexes and carbon dioxide in a supercritical state into the housing, a BST thin film is formed on a platinum thin film, while at the same time, carbon compounds, which are produced when the BST thin film is formed, are removed. The solubility of carbon compounds in the supercritical carbon dioxide is very high, and yet the viscosity of the supercritical carbon dioxide is low. Accordingly, the carbon compounds are removable efficiently from the BST thin film. An oxide or nitride film may also be formed by performing oxidation or nitriding at a low temperature using water in a supercritical or subcritical state, for example.

Abstract: A process and apparatus for depositing a ceramic coating on a component. The process involves a technique for evaporating an evaporation source containing multiple different oxide compounds, at least one of the oxide compounds having a vapor pressure that is higher than the remaining oxide compounds, to depositing a coating of the multiple oxide compounds. A high energy beam is projected onto the evaporation source to melt and form a vapor cloud of the oxide compounds of the evaporation source, while preventing the vapor cloud from contacting and condensing on the component during an initial phase in which the relative amount of the one oxide compound in the vapor cloud is greater than its relative amount in the evaporation source.

Abstract: In order to deopsit a high-grade and extra-thin film without causing damage to the substrate at a relatively low temperature,

Abstract: A method for the deposition of a thin film of a pre-determined composition e.g. a phosphor, onto a substrate, in which the composition is a ternary, quaternary or higher composition, especially a composition selected from the group consisting of thioaluminates, thiogallates and thioindates of at least one element from Groups IIA and IIB of the Periodic Table. In the embodiment, the method comprises placing a pellet of at least one sulphide on a first source and placing a pellet of at least one sulphide on a second source, with one pellet containing dopant. Vapour deposition onto the substrate is effected with separate electron beams. The rate of vaporizing of the sulphides is monitored with separate shielded coating rate monitors. The temperature of the sources is controlled to obtain the composition on the substrate. The method is particularly used for deposition of ternary or quaternary phosphors on substantially opaque substrates in electroluminescent devices.

Abstract: A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

Abstract: Tunable dielectric thin films are provided which possess low dielectric losses at microwave frequencies relative to conventional dielectric thin films. The thin films include a low dielectric loss substrate, a buffer layer, and a crystalline dielectric film. Barium strontium titanate may be used as the buffer layer and the crystalline dielectric film. The buffer layer provides strain relief during annealing operations.

Abstract: A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor deposition (CVD) method, where the process gases are supplied and purged sequentially, and additionally plasma is generated in synchronization with the cycle of pulsing reactant gases. A method of forming thin films that possess a property of gradient composition profile is also presented.

Abstract: The invention relates to a method and apparatus for the production of protective coatings on parts. A coating formed in accordance with the invention has a chemical composition and structure gradient across its thickness. The coating is obtained by heating of a composite ingot including a body and at least one insert disposed within the body. As the composite ingot is heated it sequentially evaporates to produce a vapor with a chemical composition varying over the evaporation time period. The composition of the body and composition and location of the insert within the body function to determine the chemical composition of the vapor at any time. Condensation and/or deposition of the vapor onto a substrate forms the inventive coating.

Abstract: An atomic layer deposition method which comprises forming a metal oxide thin film by using, as a group IV metal precursor, a complex of a formula M(L)2 in which M is a group IV metal ion having a charge of +4 and L is a tridentate ligand having a charge of −2, the ligand being represented by the following formula (I): wherein each of R1 and R2, independently, is a linear or branched C1-4 alkyl group; and R3 is a linear or branched C1-5 alkylene group. The group IV metal precursor exhibits excellent thermal and chemical stabilities under a carrier gas atmosphere, whereas it has high reactivity with a reaction gas.

Abstract: A solvent composition useful for liquid delivery MOCVD, comprising toluene and a Lewis base, wherein toluene is present at a concentration of from about 75% to about 98% by volume, based on the total volume of toluene and the Lewis base. Such solvent composition is usefully employed to dissolve or suspend precursors therein for liquid delivery MOCVD, e.g., MOCVD of ferroelectric material films such as SBT.

Abstract: An article having a protective coating is fabricated by providing an article substrate having a substrate surface; and thereafter producing a flattened protective coating on the substrate surface. The step of producing the flattened protective coating includes the steps of depositing a protective coating on the substrate surface, the protective coating having a protective-coating surface, and processing the protective coating to achieve the flattened protective-coating surface. The protective coating is thereafter optionally controllably oxidized. The article substrate and protective coating have an average sulfur content of less than about 10 parts per million by weight at depths measured from the protective-coating surface to a depth of about 50 micrometers below the protective-coating surface.

Abstract: An article protected by a thermal barrier coating system is fabricated by providing an article substrate having a substrate surface; and thereafter producing a pre-oxidized bond coat on the substrate surface by depositing a bond coat on the substrate surface, the bond coat having a bond coat surface, and controllably oxidizing the bond coat surface to form a pre-oxidized bond coat surface. A thermal barrier coating is thereafter deposited overlying the pre-oxidized bond coat surface. The thermal barrier coating is yttria-stabilized zirconia having a yttria content of from about 3 percent by weight to about 5 percent by weight of the yttria-stabilized zirconia.

Abstract: Methods and apparatus to make multilayer thermal barrier coatings for superalloy substrates such as turbine blades or vanes are disclosed. The methods produce non-homogeneous, nanometer-size, successive layers and a non-homogeneous interfacial layer without the use of baffles. Methods are also disclosed to use a lower cost metallic source and an oxygen bleed to create alumina or tantalum oxide vapor, to use a tantalum oxide or an alumina ingot and a low pressure inert gas feed to direct the vapor clouds, to use pulsed evaporation from a secondary vapor source to create non-homogeneous multilayer coating on non-rotated substrates, to use an electric bias to direct the vapor clouds, and to use a mechanical system to direct the vapor clouds or move and position the article to be coated in the clouds.

Abstract: An improved method for applying a ceramic material, such as a thermal barrier coating to an article. A method for applying a ceramic material as a coating to a substrate article in which the thermal conductivity of the ceramic material is reduced or lowered is provided. The thermal conductivity of a coating applied by a physical vapor deposition (PVD) method is dependent upon its distance from the source(s) of material used for the coating. The thermal conductivity of the applied coating is altered by adjusting the position of the article undergoing the PVD process by increasing the distances of the article or workpiece from the ingot or source of ceramic material to provide a coating of lower thermal conductivity. In accordance with the present invention, the article to be coated is positioned at a distance required to achieve at least a 10% reduction in the thermal conductivity of the applied coating.

Abstract: An article includes a silicon-containing substrate and a modified mullite coating. The modified mullite coating comprises mullite and a modifier component that reduces cracks in the modified mullite coating. The article can further comprise a thermal barrier coating applied to the modified mullite coating. The modified mullite coating functions as a bond coating between the external environmental/thermal barrier coating and the silicon-containing substrate. In a method of forming an article, a silicon-containing substrate is formed and a modified mullite coating is applied. The modified mullite coating comprises mullite and a modifier component that reduces cracks in the modified mullite coating.

Abstract: A process for depositing an antimony-containing coating upon a surface of a heated glass substrate includes dissolving an antimony halide in an organic solvent to form an antimony halide containing solution. This solution is then vaporized to form a gaseous antimony precursor. The gaseous antimony precursor is then directed toward and along the surface of the heated glass substrate. The antimony precursor is reacted at or near the surface to form an antimony containing coating.

Abstract: A method of forming a semiconductor device by placing a semiconductor substrate in a vacuum chamber and subjecting the semiconductor substrate (20) to a sub-atmospheric pressure, and depositing a layer (40) on the semiconductor substrate while maintaining the sub-atmospheric pressure. Deposition of the layer (40) is carried out by sequentially (i) flowing a first reactant into the vacuum chamber at a first flow rate, (ii) reducing flow of the first reactant into the vacuum chamber to a second flow rate, and (iii) increasing flow of the first reactant into the vacuum chamber to a third flow rate.

Abstract: An anti-stick coating that inhibits the adhesion of contaminants that form deposits on the internal cooling passages of gas turbine engine components. The anti-stick coating is formed as an outer coating of the internal cooling passages, and preferably overlies an environmental coating such as a diffusion aluminide coating formed on the passage surfaces. The outer coating has a thickness of not greater than three micrometers, and is resistant to adhesion by dirt contaminants as a result of comprising at least one layer of tantala, titania, hafnia, niobium oxide, yttria, silica and/or alumina. The outer coating is preferably deposited directly on the environmental coating by chemical vapor deposition.

Abstract: An article protected by a thermal barrier coating system is fabricated by providing an article substrate having a substrate surface, and thereafter producing on the substrate surface a protective coating having a polished, pre-oxidized protective coating surface. The protective coating is produced by depositing the protective coating on the substrate surface, the protective coating having a protective coating surface, thereafter polishing the protective-coating surface, and thereafter controllably oxidizing the protective-coating surface. The protective-coating surface may optionally be controllably roughened by grit blasting after polishing and before controllably oxidizing. A thermal barrier coating may be deposited overlying the polished, pre-oxidized protective-coating surface.

Abstract: The visible light reflectance of polymeric substrates coated with conductive oxides is minimized over a broad region of the visible light spectrum by alternating layers of materials of high and low refractive index interposed between the substrate and the conductive oxide. The conductive oxide is outermost to permit direct electrical contact to be made. Visible light reflectance is 10% or less and visible light transmittance is 90% or more over a broad region of the spectrum.

Abstract: An article protected by a protective coating system is fabricated by providing an article substrate having a substrate surface; and thereafter producing a protective coating having a flattened, pre-oxidized protective-coating surface on the substrate surface by depositing a protective coating on the substrate surface, the protective coating having a protective-coating surface, processing the protective coating to achieve a flattened protective-coating surface, and controllably oxidizing the protective-coating surface. A thermal barrier coating may be deposited overlying the flattened, pre-oxidized protective coating.

Abstract: A method for forming a thin film comprises the steps of: forming a first thin film using a raw material which comprises an adduct of metal &bgr;-diketonate and adduct-forming material by a metal organic chemical vapor deposition (MOCVD) method; associating metal &bgr;-diketonate dissociated from the adduct in the raw material with an adduct-forming material to regenerate the raw material; and forming a second thin film using the regenerated raw material by the MOCVD method.