Abstract: Methods for refurbishing aerospace components by removing corrosion and depositing protective coatings are provided herein. In one or more embodiments, a method of refurbishing an aerospace component includes exposing the aerospace component containing corrosion to an aqueous cleaning solution. The aerospace component contains a nickel superalloy, an aluminide layer disposed on the nickel superalloy, and an aluminum oxide layer disposed on the aluminide layer. The method includes removing the corrosion from a portion of the aluminum oxide layer with the aqueous cleaning solution to reveal the aluminum oxide layer, then exposing the aluminum oxide layer to a post-rinse, and forming a protective coating on the aluminum oxide layer.

Abstract: Methods, systems, and apparatus for carrying out rapid on-site optical chemical analysis in oil feeds are described. In one aspect, a system for manufacture of a tool includes a deposition reactor configured for molecular layer deposition or atomic layer deposition of metal powder to manufacture coated particles, a fabrication unit configured for 3D printing of the tool, and a controller that controls the deposition reactor and the fabrication unit, wherein the fabrication unit and the deposition reactor are integrated for automated fabrication of the tool using the coated particles from the deposition reactor as building material for the 3D printing.

Abstract: An environmental barrier coating, comprising a substrate containing silicon; an environmental barrier layer applied to the substrate; the environmental barrier layer comprising an oxide matrix; an oxidant getter phase interspersed throughout the oxide matrix; and a self-healing phase interspersed throughout the oxide matrix.

Abstract: A method of forming a fluorinated metal film is provided. The method includes positioning an object in an atomic layer deposition (ALD) chamber having a processing region, depositing a metal-oxide containing layer on an object using an atomic layer deposition (ALD) process, depositing a metal-fluorine layer on the metal-oxide containing layer using an activated fluorination process, and repeating the depositing the metal-oxide containing layer and the depositing the metal-oxide containing layer until a fluorinated metal film with a predetermined film thickness is formed. The activated fluorination process includes introducing a first flow of a fluorine precursor (FP) to the processing region. The FP includes at least one organofluorine reagent or at least one fluorinated gas.

Abstract: A method of increasing a work function of an electrode is provided. The method comprises obtaining an electronegative species from a precursor using electromagnetic radiation and reacting a surface of the electrode with the electronegative species. An electrode comprising a functionalized substrate is also provided.

Abstract: Condensable metal halide materials, such as but not limited to tungsten chloride (WCl6), can be used to deposit metal films or metal containing films in a chemical vapor deposition (CVD) or atomic layer deposition process. Described herein are high purity compositions comprising condensable materials and methods to purify condensable materials. In one aspect, there is provided a composition comprising: tungsten hexachloride which is substantially free of at least one impurity and wherein the tungsten hexachloride comprises at least 90%, preferably 95% and more preferably 99% by weight or greater of a ?-WCl6 and 5% by weight or less of the ?-WCl6 as measured by X-ray diffraction.

Abstract: Embodiments described herein generally relate to the formation of a UV compatible barrier stack. Methods described herein can include delivering a process gas to a substrate positioned in a process chamber. The process gas can be activated to form an activated process gas, the activated process gas forming a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen. The activated process gas can then be purged from the process chamber. An activated nitrogen-containing gas can be delivered to the barrier layer, the activated nitrogen-containing gas having a N2:NH3 ratio of greater than about 1:1. The activated nitrogen-containing gas can then be purged from the process chamber. The above elements can be performed one or more times to deposit the barrier stack.

Abstract: A precursor composition for forming a silicon dioxide film on a substrate, the precursor composition including at least one precursor compound represented by the following chemical formulas (1), (2), and (3): HxSiAy(NR1R2)4-x-y??(1) HxSi(NAR3)4-x??(2) HxSi(R4)z(R5)4-x-z??(3) wherein, independently in the chemical formulas (1), (2), and (3), H is hydrogen, x is 0 to 3, Si is silicon, A is a halogen, y is 1 to 4, N is nitrogen, and R1, R2, R3, and R5 are each independently selected from the group of H, aryl, perhaloaryl, C1-8 alkyl, and C1-8 perhaloalkyl, and R4 is aryl in which at least one hydrogen is replaced with a halogen or C1-8 alkyl in which at least one hydrogen is replaced with a halogen.

Abstract: Methods of depositing a tin-containing layer on a substrate are disclosed herein. In some embodiments, a method of depositing a tin-containing layer on a substrate may include flowing a tin source comprising a tin halide into a reaction volume; flowing a hydrogen plasma into the reaction volume; forming one or more tin hydrides within the reaction volume from the tin source and the hydrogen plasma; and depositing the tin-containing layer on a first surface of the substrate using the one or more tin hydrides.

Abstract: A cutting tool insert for machining by chip removal comprising a body of a hard alloy of cemented carbide, cermet, ceramics or cubic boron nitride based material onto which a hard and wear resistant coating is deposited by CVD, and the methods of making and using the same. The coating includes at least one ?-Al2O3 layer with a thickness between 0.5 ?m and 40 ?m having a {01-15} and/or {10-15} texture exhibiting excellent wear and metal cutting performance.

Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.

Abstract: Coated articles and methods and systems for coating the articles are described herein. The methods and systems described herein include, but are not limited to, steps for actively or passively controlling the temperature during the coating process, steps for providing intimate contact between the substrate and the support holding the substrate in order to maximize energy transfer, and/or steps for preparing gradient coatings. Methods for depositing high molecular weight polymeric coatings, end-capped polymer coatings, coatings covalently bonded to the substrate or one another, metallic coatings, and/or multilayer coatings are also disclosed. Deposition of coatings can be accelerated and/or improved by applying an electrical potential and/or through the use of inert gases.

Abstract: A method is provided for depositing a dielectric film on a substrate. According to one embodiment, the method includes providing the substrate in a process chamber, exposing the substrate to a gaseous precursor to form an adsorbed layer on the substrate, exposing the adsorbed layer to an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas, or a combination thereof, to form the dielectric film on the substrate, generating a hydrogen halide gas in the process chamber by a decomposition reaction of a hydrogen halide precursor gas, and exposing the dielectric film to the hydrogen halide gas to remove contaminants from the dielectric film.

Abstract: Methods of depositing pure metal and aluminum alloy metal films. Certain methods comprises contacting a substrate surface with first and second precursors, the first precursor comprising an aluminum precursor selected from dimethylaluminum hydride, alane coordinated to an amine, and a compound having a structure represented by: wherein R is a C1-C6 alkyl group, and the second precursor comprising a metal halide. Other methods relate to sequentially exposing a substrate to a first and second precursor, the first precursor comprising an aluminum precursor as described above, and the second precursor comprising Ti(NR?2)4 or Ta(NR?2)5, wherein R? is an alkyl, alkenyl, alkynyl, keto or aldehyde group.

Abstract: A slurry and slurry coating process for forming a diffusion aluminide coating on a substrate, including internal surfaces within the substrate. The process involves preparing a slurry of a powder containing a metallic aluminum alloy having a melting temperature higher than aluminum, an activator capable of forming a reactive halide vapor with the metallic aluminum, and a binder containing an organic polymer. The slurry is applied to surfaces of the substrate, which is then heated to burn off the binder, vaporize and react the activator with the metallic aluminum to form the halide vapor, react the halide vapor at the substrate surfaces to deposit aluminum on the surfaces, and diffuse the deposited aluminum into the surfaces to form a diffusion aluminide coating. The process can be tailored to selectively produce an inward or outward-type coating. The binder burns off to form an ash residue that can be readily removed.

Abstract: A coated article and a chemical vapor deposition process are disclosed. The coated article includes a functionalized layer applied to the coated article by chemical vapor deposition. The functionalized layer is a layer selected from the group consisting of an oxidized-then-functionalized layer, an organofluoro treated layer, a fluorosilane treated layer, a trimethylsilane treated surface, an organofluorotrialkoxysilanes treated layer, an organofluorosilylhydrides-treated layer, an organofluoro silyl treated layer, a tridecafluoro 1,1,2,2-tetrahydrooctylsilane treated layer, an organofluoro alcohol treated layer, a pentafluoropropanol treated layer, an allylheptafluoroisopropyl ether treated layer, a (perfluorobutyl) ethylene treated layer, a (perfluorooctyl) ethylene treated layer, and combinations thereof. The process includes applying the functionalized layer.

Abstract: A method is disclosed for fabricating high efficiency CIGS solar cells including the deposition of a multi-component metal precursor film on a substrate. The substrate is then inserted into a system suitable for exposing the precursor to a chalcogen to form a chalcogenide TFPV absorber. One or more Na precursors are used to deposit a Na-containing layer on the precursor film in the system. This method eliminates the use of dedicated equipment and processes for introducing Na to the TFPV absorber.

Abstract: The present invention relates to a method of preparing a material having a superhydrophobic region and a hydrophobic region, and more particularly to a method of preparing a material having a superhydrophobic region and a hydrophobic region by preparing a superhydrophobic surface body and hydrolyzing one surface of the prepared superhydrophobic surface body using a strong base. The preparation method according to the invention is simpler than conventional preparation methods and is capable of preparing a material having opposite surface characteristics at low costs.

Abstract: Presented herein are articles and methods featuring substrates with thin, uniform polymeric films grafted (e.g., covalently bonded) thereupon. The resulting coating provides significant reductions in thermal resistance, drop shedding size, and degradation rate during dropwise condensation of steam compared to existing coatings. Surfaces that promote dropwise shedding of low-surface tension condensates, such as liquid hydrocarbons, are also demonstrated herein.

Abstract: A method for making a coated article wherein the method includes the following steps: providing a substrate; and depositing an aluminum oxynitride coating layer from a gaseous mixture. The gaseous mixture contains the following components: 30.0-65.0 volume percent nitrogen, 0.7-1.3 volume percent aluminum tri-chloride; 1.0-2.0 volume percent ammonia, 0.1-1.5 carbon dioxide, 1.5-4.5 volume percent hydrogen chloride, optional components of carbon monoxide and/or argon, and hydrogen as the balance.

Abstract: A method of fluoridation that can maintain a stable treatment quality is provided. The method of the fluoridation treatment performs the fluoridation treatment by heating and keeping a workpiece in a fluoridation treatment space filled with a predetermined fluoride atmosphere. By exposing an interior space structure that is reactive against fluorine within the fluoridation treatment space, forming a fluoride layer in advance on a surface of the interior space structure exposed within the fluoridation treatment space, and performing the fluoridation treatment, a fluoridation source gas supplied for the fluoridation treatment of the workpiece is not significantly consumed for fluoridating the surface of the interior space structure during the fluoridation treatment. Further, even when a fluoridation potential of the supplied fluoridation source gas is insufficient, the fluoride layer on the surface of the interior space structure discharges the fluoridation gas.

Abstract: The invention relates to coated bodies made of metal, hard metal, cermet or ceramic material, coated with a single- or multi-layer coating system containing at least one hard material composite coating, and to a method for coating such bodies. The aim of the invention is to develop a coating system for such bodies, which is single- or multi-layered and comprises at least one hard material composite coating, which contains cubic TiAlCN and hexagonal AlN as the main phases and is characterized by a composite structure having a smooth, homogeneous surface, high oxidation resistance and high hardness. The aim includes the development of a method for cost-effectively producing such coatings. The hard material composite coating according to the invention contains cubic TiAlCN and hexagonal AlN as main phases, wherein the cubic TiAlCN is microcrystalline fcc-Ti1-xAlxCyNz where x>0.75, y=0 to 0.25 and z=0.75 to 1 having a crystallite size of ?=0.

Abstract: The present invention relates to the field of semiconductor processing and provides methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the method provides heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention provides radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.

Abstract: A coated metal substrate has at least one layer of titanium based hard material alloyed with at least one alloying element selected from the list of chromium, vanadium and silicon. The total quantity of alloying elements is between 1% and 50% of the metal content, the layer having a general formula of: (Ti100-a-b-cCraVbSic)CxNyOz.

Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.

Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.

Abstract: Provided is a germanium complex represented by Chemical Formula 1 wherein Y1 and Y2 are independently selected from R3, NR4R5 or OR6, and R1 through R6 independently represent (Ci-C7) alkyl. The provided germanium complex with an amidine derivative ligand is thermally stable, is highly volatile, and does not include halogen components. Therefore, it may be usefully used as a precursor to produce high-quality germanium thin film or germanium-containing compound thin film by metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD).

Abstract: A method of coating a substrate, such as a microfluidic device having an interior surface, includes heating a gas including a perfluoroacrylate, a crosslinker and an initiator at a first temperature, maintaining the substrate at a second temperature lower than the first temperature in a reaction chamber, exposing the heated gas to the substrate in the reaction chamber, and reacting the perfluoroacrylate with the initiator and crosslinker to form a polymer coating on the surface of the substrate.

Abstract: A method is provided for depositing a dielectric film on a substrate. According to one embodiment, the method includes providing the substrate in a process chamber, exposing the substrate to a gaseous precursor to form an adsorbed layer on the substrate, exposing the adsorbed layer to an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas, or a combination thereof, to form the dielectric film on the substrate, generating a hydrogen halide gas in the process chamber by a decomposition reaction of a hydrogen halide precursor gas, and exposing the dielectric film to the hydrogen halide gas to remove contaminants from the dielectric film.

Abstract: Chemical additives are used to increase the rate of deposition for the amorphous silicon film (?Si:H) and/or the microcrystalline silicon film (?CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

Abstract: The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor fed is split in to two paths from a precursor source. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes.

Abstract: A mixture and technique for coating an internal surface of an article is generally described. In one aspect, a method includes introducing a mixture comprising an aluminum source and an organo halocarbon activator into an internal cavity of an article. In some embodiments, the method may further include heating the article and the mixture to a temperature sufficient to form an aluminum halide, which deposits on a surface of the internal cavity to form a coated article. In further embodiments, the method may also include depositing on an external surface of the article a first layer comprising Pt, Si, and a reactive element selected from the group consisting of Hf, Y, La, Ce, Zr, and combinations thereof, and depositing a second layer comprising Al on the first layer to form an alloy including a ?-Ni+??-Ni3Al phase constitution, where the second layer is deposited with the organo halocarbon activator.

Abstract: Electrowetting devices coated with one or more polymeric layers and methods of making and using thereof are described herein. The coatings may be formed in a single layer or as multiple layers. In one embodiment the first layer deposited serves as an insulating layer of high dielectric strength while the second layer deposited serves as a hydrophobic layer of low surface energy. These materials may themselves be deposited as multiple layers to eliminate pinhole defects and maximize device yield. In one embodiment the insulating layer would be a vapor deposited silicone polymeric material including, but not limited to, polytrivinyltrimethylcyclotrisiloxane or polyHVDS. In another embodiment the insulating layer may be a vapor deposited ceramic such as SiO2 with very little carbon content. In a further embodiment the insulating layer may be composed of alternating layers of a siloxane material and a ceramic material.

Abstract: A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.

Abstract: Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

Abstract: Disclosed are methods of forming metal-nitride-containing films from the combination of amino-metal precursors and halogenated metal precursors, preferably forming SiN-containing films from the combination of aminosilane precursors and chlorosilane precursors. Varying the sequential reaction of the amino-metal precursors and halogenated metal precursors provide for the formation of metal-nitride-containing films having varying stoichiometry. In addition, the metal-nitride-containing film composition may be modified based upon the structure of aminometal precursor. The disclosed processes may be thermal processes or plasma processes at low temperatures.

Abstract: A coated article, in particular a tool for cutting machining, has at least one titanium diboride layer which has been deposited by a thermal CVD process and has a thickness of at least 0.1 ?m. The titanium diboride layer has an extremely fine-grained microstructure with an average grain size of not more than 50 nm.

Abstract: The present invention provides the technology for burying metal even in a fine concave portion such as trench and via. According to an embodiment of the present invention, a vapor of the metal as the objective material, a gas containing halogen for etching the metal, and a metal halide vapor made up of the metal element and the halogen element are supplied to the substrate, which thus forms a metal halide layer in the concave portion, and thereby deposits the metal under the metal halide layer. The procedure can achieve the above object.

Abstract: An object of the present invention is to provide a single-phase film of a metal sulfide with good quality, and a method for preparing a metal sulfide film at a low cost in a convenient manner. The present invention provides a preparation method of a metal sulfide film, comprising the steps of providing metal halide, such as iron halide (FeCl3, FeI3, FeBr3, FeCl2, FeI2 and FeBr2), as a first raw material and a thioamide compound, such as thioacetamide, as a second raw material, preferably vaporizing these raw materials and reacting them at atmospheric pressure; and a metal sulfide film prepared by this method.

Abstract: Disclosed are thermal and/or plasma-enhanced CVD, ALD, and/or pulse CVD processes to deposit alkaline earth metal fluoride-based films, such as MgF2, at temperatures ranging from about 25° C. to about 300° C., preferably from about 50° C. to about 250° C., and more preferably from about 100° C. to about 200° C.

Abstract: The invention relates to a method and system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The method includes reacting an amount of a gaseous Group III precursor having one or more gaseous gallium precursors as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber; and supplying sufficient energy to the gaseous gallium precursor(s) prior to their reacting so that substantially all such precursors are in their monomer forms. The system includes sources of the reactants, a reaction chamber wherein the reactants combine to deposit Group III-V semiconductor material, and one or more heating structures for heating the gaseous Group III precursors prior to reacting to a temperature to decompose substantially all dimers, trimers or other molecular variations of such precursors into their component monomers.

Abstract: Provided are a coated cutting tool having excellent wear resistance and excellent resistance to chipping as well as excellent fracture resistance such that the coated cutting tool is unlikely to cause backward movement of the tool edge position due to wear or chipping, and a method for producing the same. A coated cutting tool comprising a base material having a surface coated with a coating film, wherein the coating film comprises at least one layer comprised of a TiCN columnar crystal film, wherein the TiCN columnar crystal film has an average grain size of 0.05 to 0.5 ?m, as measured in the direction parallel to the surface of the base material, and exhibits an X-ray diffraction pattern having a peak at a diffraction angle 2? in the range of from 121.5 to 122.6° wherein the peak is ascribed to the (422) crystal facet of the TiCN columnar crystal as measured using CuK? radiation.

Abstract: A method and composition are provided for coating honeycomb seals and, more specifically, to a method and slurry for applying an aluminide coating onto honeycomb seals. The method includes preparing a slurry of a powder containing a metallic aluminum alloy having a melting temperature higher than aluminum, an activator capable of forming a reactive halide vapor with the metallic aluminum, and a binder containing an organic polymer. The slurry is applied to surfaces of the honeycomb seal, which is then heated to remove or burn off the binder, vaporize and react the activator with the metallic aluminum to form the halide vapor, react the halide vapor at the substrate surfaces to deposit aluminum on the surfaces of the seal, and diffuse the deposited aluminum into the surfaces to form a diffusion aluminide coating.

Abstract: A film forming method for producing a barrier film for a semiconductor. A metallic material gas and a reactive gas are alternatively introduced into a vacuum chamber. A back-flow preventing gas and an auxiliary gas are also introduced into the vacuum chamber. The reactive gas and the auxiliary gas are moved with a flow of the back-flow preventing gas, and radicals are produced by being in contact with a catalytic material. The metallic material gas is not in contact with the catalytic material, and the catalytic material is not degraded. A shower plate may be disposed between a radical producing chamber and a reaction chamber, so that the radicals are fed into the reaction chamber through holes.

Abstract: A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.

Abstract: [PROBLEMS] To provide a cutting tool consisting of a hard material improved in the adherence between a substratum of cemented carbide having hard phases bound by a binder metal and a TiN layer superimposed on a surface of the substratum, and provide a process for producing the same. [MEANS FOR SOLVING PROBLEMS] There is provided a cutting tool consisting of a hard material, characterized in that the hard material has a substratum containing hard phases and a binder metal and a TiN layer superimposed on a surface of the substratum, and that the substratum has ?-phases consisting of at least one solid solution of carbide, nitride or carbonitride containing W and at least one member selected from among Ti, Ta, Nb and Zr, and that at least some of the ?-phases lie at a surface of the substratum, and that the TiN layer has crystals with the same orientation relationship as that of ?-phase crystals just above the ?-phases of the substratum surface.

Abstract: Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules.

Abstract: A process system adapted for processing of or with a material therein. The process system includes: a sampling region for the material; an infrared photometric monitor constructed and arranged to transmit infrared radiation through the sampling region and to responsively generate an output signal correlative of the material in the sampling region, based on its interaction with the infrared radiation; and process control means arranged to receive the output of the infrared photometric monitor and to responsively control one or more process conditions in and/or affecting the process system.

Abstract: A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.

Abstract: The formation of electronic assemblies including a heat spreader coupled to a die through a thermal interface material formed from an indium preform, is described. One embodiment relates to a method including providing a preform comprising indium, the preform including an indium oxide layer thereon. The method also includes exposing the preform to fluorine so that part of the indium oxide layer is transformed into an indium oxy-fluoride. The method may also include, after the exposing the preform to fluorine so that part of the indium oxide layer is transformed into an indium oxy-fluoride, positioning the preform between a die and a heat sink, and applying pressure to and heating the preform positioned between the die and the heat sink so that reflow occurs and a bond is formed between the die and the heat sink.