Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

Abstract: Methods of selectively depositing a feature onto a substrate surface while maintaining substantially straight sidewalls on the feature. A portion of the feature is grown and then covered with a protective film. The protective film is removed from the top of the feature, leaving some of the film on the sides of the feature and the process is repeated to grow a feature of desired thickness.

Abstract: Fluorinated coatings having a lubricious additive, articles with the fluorinated coatings, and methods of making articles with the fluorinated coatings are provided. More specifically, the fluorinated coatings are prepared from a curable coating composition that includes both a fluorinated silane and a fluorinated polyether oil. The curable coating composition is typically applied adjacent to a siliceous substrate and then cured. The resulting cured articles can have an outer surface that has a good tactile response, that is abrasion resistant, that is easy to clean, or a combination thereof.

Abstract: Provided are methods of forming a material layer by chemically adsorbing metal atoms to a substrate having anions formed on the surface thereof, and a method of fabricating a memory device by using the material layer forming method. Accordingly, a via hole with a small diameter can be filled with a material layer without forming voids or seams. Thus, a reliable memory device can be obtained.

Abstract: Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu2ZnSnS4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.

Abstract: The invention relates to a method for forming a protective coating against high-temperature oxidation on a surface of a refractory composite material based on silicon and niobium, wherein chromium present on the surface to be protected is reacted with a reactive gas which contains silicon and oxygen in order to produce a composite coating having two phases, a first phase of which is an oxide phase based on silica which has viscoplastic properties and a second phase of which is based on silicon, chromium and oxygen, and wherein the first phase and second phase are coalesced at high temperature, which allows a protective coating to be formed in which the second phase acts as a reservoir to reform, during operation, the first phase by means of reaction with an oxidising gas. The invention is preferably used in the field of aeronautical engines.

Abstract: A method for coating a graphite body with pyrolytic boron nitride comprising steps of (1) densifying the surface of the graphite body by CVI treatment, (2) then treating the surface with a reactive gas, (3) and after that, forming a PBN coating film over the said treated surface; and also a coated article shown by FIG. 1 which is obtained by this method.

Abstract: A bonding element, a bonding element matrix and composite materials with a wide range of attractive properties that may be optimized, including, but not limited to, mechanical properties, thermal properties, magnetic properties, optical properties and nuclear properties, as a result of a first layer and second layer structure or core, first layer, and second layer structure of the bonding elements, as well as methods for making the bonding elements and the corresponding ceramic and/or composite materials.

Abstract: The present invention includes an exposure chamber configured to contain a passivating gas having a selected hydrogen concentration, the exposure chamber further configured to contain at least one NLO crystal for exposure to the passivating gas within the chamber, a passivating gas source fluidically connected to the exposure chamber, the passivating gas source configured to supply passivating gas to an interior portion of the exposure chamber, and a substrate configured to hold the NLO crystal within the chamber, the substrate further configured to maintain a temperature of the NLO crystal at or near a selected temperature, the selected temperature being below a melting temperature of the NLO crystal.

Abstract: Methods for repairing gas turbine engine components are provided. In this regard, a representative method includes: applying a surface treatment to the component such that locations at an exterior surface of the component exhibiting inter-granular attack are protected from erosion during a cleaning process; and cleaning the component using hydrogen fluoride ion cleaning to clean the component.

Abstract: A coating process for coating a surface of a glass substrate in normal air pressure, in which coating process at least one liquid starting material is atomized into droplets and the formed droplets are guided towards the surface to be coated. The formed droplets are vaporized substantially close to the surface to be coated before the droplets contact the surface to be coated by bringing to the coating process the thermal energy needed for vaporizing the droplets with the glass substrate.

Abstract: A method of coating hydroxylated surfaces by gas phase grafting is described. Especially acyl groups, silyl groups and/or alkyl groups are located on the surface of materials by gas phase grafting. The grafting method is a dry process. The material to coat can be organic or inorganic materials. The produced surface coated material are strong and durable and material normally not water-proof can be water-proof due to the surface treating. Examples of items produced from surface treated material may be water-proof cardboard boxes, other containers, furniture, interior for cars and boats. Items produced from organic materials such as from plant parts are biodegradable.

Abstract: Using this method, a coating (1) is manufactured on a substrate (2), which forms a surface of a base body. In this method a layer (3) with ceramic coating material is applied to the substrate in a process chamber (6) using a plasma beam (30) and using an LPPS or LPPS-TF process. The substrate contains at least one metal Me. At a set reaction temperature of the substrate and in the presence of oxygen, an oxide, which results reactively with metal M diffused on the surface, is generated as a ceramic intermediate layer (4). The ceramic layer (3) is deposited on this intermediate layer.

Abstract: A disclosed substrate processing method includes steps of: arranging a substrate in a chamber; introducing H2 gas at a first flow rate and O2 gas at a second flow rate independently from the H2 gas into a catalyst reaction portion in which catalyst is accommodated, wherein H2O gas produced from the H2 gas and the O2 gas that contact the catalyst is ejected from the catalyst reaction portion toward the substrate; and reducing a flow rate of the O2 gas introduced to the catalyst reaction portion to a third flow rate that is lower than the second flow rate, wherein the steps of introducing the H2 gas and the O2 gas and reducing the flow rate of the O2 gas are repeated in this order at a predetermined repetition frequency, thereby processing the substrate.

Abstract: Systems and methods for preparing inorganic-organic interfaces using organo-transition metal complexes and self-assembled monolayers as organic surfaces. In one embodiment, a silicon wafer is cleaned and reacted with stabilized pirhana etch to provide an oxide surface. The surface is reacted with the trichlorosilyl end of alkyltrichlorosilanes to prepare self assembling monomers (SAMs). The alkyltrichlorosilanes have the general formula R1-R—SiCl3, where R1 is —OH, —NH2, —COOH, —SH, COOCH3, —CN, and R is a conjugated hydrocarbon, such as (CH2)n where n is in the range of 3 to 18. The functionalized end of the SAM can optionally modified chemically as appropriate, and is then reacted with metal-bearing species such as tetrakis(dimethylamido)titanium, Ti[N(CH3)2]4, (TDMAT) to provide a titanium nitride layer.

Abstract: Methods for processing substrate surfaces carrying coatings comprising a metal are disclosed. The methods involve providing a substrate surface having a coating comprising a metal, and exposing the substrate surface to a halogen-containing gas.

Abstract: A plastic member, for example, a hydrocarbon-based transparent polymer molded product is subjected to fluorination processing in a fluorine gas within a reaction device 8 to fluorinate only a surface layer thereof. Thus, a refractive index can be lowered, a surface reflection can be lowered, and light transmittance of a base material can be improved.

Abstract: The synthesis of nanostructures uses a catalyst that may be in the form of a thin film layer on a substrate. Precursor compounds are selected for low boiling point or already exist in gaseous form. Nanostructures are capable of synthesis with a masked substrate to form patterned nanostructure growth. The techniques further include forming metal nanoparticles with sizes <10 nm and with a narrow size distribution. Metallic nanoparticles have been shown to possess enhanced catalytic properties. The process may include plasma enhanced chemical vapor deposition to deposit Ni, Pt, and/or Au nanoparticles onto the surfaces of SiO2, SiC, and GaN nanowires. A nanostructure sample can be coated with metallic nanoparticles in approximately 5-7 minutes. The size of the nanoparticles can be controlled through appropriate control of temperature and pressure during the process. The coated nanowires have application as gas and aqueous sensors and hydrogen storage.

Abstract: Coatings are applied on a flexible substrate using atomic layer deposition and molecular layer deposition methods. The coatings have thickness of up to 100 nanometers. The coatings include layers of an inorganic material such as alumina, which are separated by flexibilizing layers that are deposited with covalent chemical linkage to the inorganic material and which are one or more of silica deposited by an atomic layer deposition process; an organic polymer that is deposited by a molecular layer deposition process, or a hybrid organic-inorganic polymer that is deposited by an molecular layer deposition process.

Abstract: There are provided methods of fabricating a metal silicate layer on a semiconductor substrate using an atomic layer deposition technique. The methods include performing a metal silicate layer formation cycle at least one time in order to form a metal silicate layer having a desired thickness. The metal silicate layer formation cycle includes an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon oxide layer formation cycle Q times. K and Q are integers ranging from 1 to 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, exhausting the metal source gas remaining in a reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor.

Abstract: A method for producing a protective coat formed on the top surface of a substrate, or on the top surface of a thin film layered body formed on the substrate is disclosed, wherein the protective coat comprises silicon oxynitride in which the atomic ratio of Si/O/N is 100/X/Y (130?X+Y?180, 10?X?135, 5?Y?150), wherein the protective coat is formed by a sputtering method in which silicon nitride is used as a target material, an inert gas is used as a sputtering gas, and N2 is used as a reactive feed gas. The oxygen component of the obtained protective coat comprising the silicon oxynitride is incorporated into the composition of the protective coat by degradation of moisture that was present in the substrate or the thin film layered body or in the reaction apparatus.

Abstract: Provided are methods of forming a material layer by chemically adsorbing metal atoms to a substrate having anions formed on the surface thereof, and a method of fabricating a memory device by using the material layer forming method. Accordingly, a via hole with a small diameter can be filled with a material layer without forming voids or seams. Thus, a reliable memory device can be obtained.

Abstract: A processing device, comprising a processing container, a shower head structure provided at the ceiling part of the processing container and having a plurality of gas jetting holes for jetting specified processing gas into the processing container formed in the gas jetting surface thereof facing the inside of the processing container, and a placing stand disposed in the processing container so as to face the shower head structure, wherein a head distance between the gas jetting surface and the placing stand and the blowing speed of gas from the gas jetting holes are set within the range surrounded by connecting, in a square shape with straight lines in a plane coordinate system having the head distance plotted on an abscissa and the gas jetting speed plotted on a coordinate, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 15 mm is 32 m/sec, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 15 mm is 67 m/sec, a point wher

Abstract: A method for producing a substrate having a carbon-doped titanium oxide layer, which is excellent in durability (high hardness, scratch resistance, wear resistance, chemical resistance, heat resistance) and functions as a visible light responding photocatalyst, is provided. The surface of a substrate, which has at least a surface layer comprising titanium, a titanium alloy, a titanium alloy oxide, or titanium oxide, is heat-treated in a combustion gas atmosphere of a gas consisting essentially of a hydrocarbon, or in a gas atmosphere consisting essentially of a hydrocarbon, such that the surface temperature of the substrate is 900 to 1,500° C.; or a combustion flame of a gas consisting essentially of a hydrocarbon, is directly struck against the surface of the substrate for heat treatment such that the surface temperature of the substrate is 900 to 1,500° C., thereby forming a carbon-doped titanium oxide layer, whereby the substrate having the carbon-doped titanium oxide layer is obtained.

Abstract: An apparatus and method for synthesizing nanostructures. In one embodiment, the apparatus includes a reactor having a reaction zone and a conductive susceptor positioned in the reaction zone. The method includes the steps of transporting a gas mixture having an aerosolized catalyst, a feedstock and a carrier gas into the reaction zone of the reactor, inductively heating the reaction zone, and regulating a flow rate of the gas mixture to allow the catalyst to spend a sufficient amount of time in the reaction zone for the growth of nanostructures.

Abstract: A preform and method for forming preforms and structural members are provided. The preform can be formed by cold spraying a structural material onto a base member, such that the preform has dimensions approximating the dimensions of the machined structural member to thereby reduce material waste and machining time when forming the structural member from the preform. In addition, the preforms can be plastically deformed to more closely correspond with the desired dimensions of the structural member. Further, hydrogen can be provided in a mixed stream of gas and structural material for spraying, and the resulting structural member can be subjected to a sub-atmospheric pressure to release hydrogen therefrom.

Abstract: Method of forming different diffusion aluminide coatings on different surface regions of the same superalloy substrate involves positioning the substrate in a coating chamber having a aluminum-bearing coating gas flowing therein with a first substrate surface region enclosed in a masking enclosure having one or more coating gas entrance apertures communicating the interior of the enclosure to the coating gas in the coating chamber and with a second substrate surface region freely communicated to the coating gas in the coating chamber, and gas phase aluminizing the substrate by heating the substrate to an elevated coating temperature in the coating chamber having the coating gas therein to concurrently form an outwardly-grown diffusion aluminide coating on the first substrate surface region and to form an inwardly-grown, diffusion aluminide coating on the second substrate surface region of the same substrate.

Abstract: A method of cleaning and oxidizing a substrate, for example, a silicon wafer, and forming a film (e.g., silicon dioxide) in-situ by placing the substrate in a chamber, pumping-down the chamber to a predetermined subatmospheric pressure, and elevating a temperature of the substrate within the chamber. Cleaning begins by releasing hydrogen gas into the chamber for a time period of, for example, 5 seconds to 300 seconds. The hydrogen gas, along with any contaminants, are then evacuated from the chamber. Prior to removing the substrate, an oxidant, such as oxygen (O2), steam or another process (e.g., an in-situ steam generation (ISSG) process) is then released into the chamber and the film is formed on a surface of the substrate.

Abstract: A method for structuring a surface includes, by an assigned modification device, creating a latent structure of at least a first layer of the surface, which has a polymer therein, so as to form hydrophilic and hydrophobic regions for producing a printing form for offset printing, by selectively applying a gaseous, readily volatile solvent as a modifying agent to at least one locally limited region of the surface over at least one exposure time interval. A device for performing the method, a printing form exposer, a printing unit and a printing machine including the surface-structuring device according to the invention, are also provided.

Abstract: A method for forming an aluminide coating on a turbine engine component having an external surface and an internal cavity defined by an internal surface that is connected to the external surface by at least one hole. The method is conducted in a vapor coating container having a hollow interior coating chamber, and includes the steps of loading the coating chamber with the component to be coated; flowing a tri-alkyl aluminum coating gas into the loaded coating chamber at a specified temperature, pressure, and time to deposit an aluminum coating on the external and internal surfaces of the component; and heating the component in a nonoxidizing atmosphere at a specified temperature and time to form an aluminide coating on the external and internal surfaces. The coated component is typically then maintained at an elevated temperature in the presence of oxygen to form an oxide coating on the external and internal surfaces of the component.

Abstract: A process for reacting a gaseous species with a substrate includes placing the substrate in a space, heating the space, introducing the gaseous species into the space, and cooling the space. Introducing the gaseous species into the space includes introducing the gaseous species into the space before the substrate reaches a steady state temperature and/or reacting the gaseous species with the substrate includes reacting the gaseous species with the substrate while cooling the space.

Abstract: This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (N2O) and ozone (O3). The presence of O3 in the oxidizing ambiance greatly enhances the oxidation rate compared to an ambiance in which N2O is the only oxidizing agent. In addition to enhancing the oxidation rate of silicon, it is hypothesized that the presence of O3 interferes with the growth of a thin silicon oxynitride layer near the interface of the silicon dioxide layer and the unreacted silicon surface which makes oxidation in the presence of N2O alone virtually self-limiting. The presence of O3 in the oxidizing ambiance does not impair oxide reliability, as is the case when silicon is oxidized with N2O in the presence of a strong, fluorine-containing oxidizing agent such as NF3 or SF6.

Abstract: A method of placing a ceramic coating on an article of manufacture comprising a substrate formed of a nickel or cobalt-based superalloy, which includes the steps of placing a bonding layer on the substrate and placing an anchoring layer, which is chemically different from the bonding layer and comprises a nitride compound, on the bonding layer. The method further includes the step of placing the ceramic coating on the anchoring layer.

Abstract: In accordance with the present invention, an insulating sealing structure useful in physical vapor deposition apparatus is provided. The insulating sealing structure is capable of functioning under high vacuum and high temperature conditions. The apparatus is a three dimensional structure having a specifically defined range of electrical, chemical, mechanical and thermal properties enabling the structure to function adequately as an insulator which does not break down at voltages ranging between about 1,500 V and about 3,000 V, which provides a seal against a vacuum of at least about 10−6 Torr, and which can function at a continuous operating temperature of about 300° F. (148.9° C.) or greater.

Abstract: A method for preparing an &agr;-Al2O3 nanotemplate of fully crystalline &agr;-Al2O3 directly on the surface of a metal alloy is provided. Also provided is a related apparatus.

Abstract: A method of oxidizing a substrate having area of about 30,000 mm2 or more. The surface is preferably comprised of silicon-containing materials, such as silicon, silicon germanium, silicon carbide, silicon nitride, and metal suicides. A mixture of oxygen-bearing gas and diluent gas normally non-reactive to oxygen, such as Ne, Ar, Kr, Xe, and/or Rn are ionized to create a plasma having an electron density of at least about 1e12 cm−3 and containing ambient electrons having an average temperature greater than about 1 eV. The substrate surface is oxidized with energetic particles, comprising primarily atomic oxygen, created in the plasma to form an oxide film of substantially uniform thickness. The oxidation of the substrate takes place at a temperature below about 700° C., e.g., between about room temperature, 20° C., and about 500° C.

Abstract: A servo-patterned magnetic recording medium, comprising: a magnetic layer having a surface with substantially uniform topography, the magnetic layer including a data zone and a servo pattern, the servo pattern comprising: (a) a first patterned plurality of regions of first, higher values of magnetic coercivity Hc and magnetic remanence-thickness product Mrt; and (b) a second patterned plurality of ion-implanted regions of second, lower values of Hc. and Mrt; wherein the second, lower values of Hc and Mrt are sufficiently lower than the first, higher values of Hc and Mrt as to permit sensing for enabling accurate positioning of a read/write transducer head in the data zone but sufficiently high for providing the medium with thermal stability, high amplitude of magnetic transition, and high signal-to-noise ratio.

Abstract: A semiconductor substrate is placed within a housing. By supplying organometallic complexes and carbon dioxide in a supercritical state into the housing, a BST thin film is formed on a platinum thin film, while at the same time, carbon compounds, which are produced when the BST thin film is formed, are removed. The solubility of carbon compounds in the supercritical carbon dioxide is very high, and yet the viscosity of the supercritical carbon dioxide is low. Accordingly, the carbon compounds are removable efficiently from the BST thin film. An oxide or nitride film may also be formed by performing oxidation or nitriding at a low temperature using water in a supercritical or subcritical state, for example.

Abstract: A semiconductor substrate is placed within a housing. By supplying organometallic complexes and carbon dioxide in a supercritical state into the housing, a BST thin film is formed on a platinum thin film, while at the same time, carbon compounds, which are produced when the BST thin film is formed, are removed. The solubility of carbon compounds in the supercritical carbon dioxide is very high, and yet the viscosity of the supercritical carbon dioxide is low. Accordingly, the carbon compounds are removable efficiently from the BST thin film. An oxide or nitride film may also be formed by performing oxidation or nitriding at a low temperature using water in a supercritical or subcritical state, for example.

Abstract: This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (N2O) and ozone (O3). The presence of O3 in the oxidizing ambiance greatly enhances the oxidation rate compared to an ambiance in which N2O is the only oxidizing agent. In addition to enhancing the oxidation rate of silicon, it is hypothesized that the presence of O3 interferes with the growth of a thin silicon oxynitride layer near the interface of the silicon dioxide layer and the unreacted silicon surface which makes oxidation in the presence of N2O alone virtually self-limiting. The presence of O3 in the oxidizing ambiance does not impair oxide reliability, as is the case when silicon is oxidized with N2O in the presence of a strong, fluorine-containing oxidizing agent such as NF3 or SF6.

Abstract: The present invention relates to a method for producing an ordered array of nanoparticles on a substrate surface and to a nanomaterial having such an ordered array of nanoparticles. Particularly, but not exclusively, the invention relates to the provision of an ordered array of magnetic nanocrystals on a substrate surface. Although the present invention is not limited to the production of a magnetic array, one important object of the present invention is the production of a material suitable for use as an ultra high density magnetic data storage medium. According to the present invention there is provided a method of producing a structure comprising a plurality of nanoparticles distributed across a surface of a substrate in a predetermined array, the method comprising the steps of: i) providing a substrate which has a passivated surface; ii) depositing nanoparticles on to said surface; and iii) displacing said particles over said surface to configure them in said predetermined array.

Abstract: In a surface treatment method of treating the surface of a material to be treated, by irradiating with light the material to be treated and a mediating material in contact with each other, the mediating material itself causes substantially no interaction upon irradiation with light. The surface of the material to be treated is treated by provision of a chemical reaction field, in which a substituent of the material to be treated and an atom of atomic group of the mediating material is induced by excitation, by irradiating with light by using the logical product of the contact interface between the material to be treated and the mediating material and the light irradiation region, thereby causing and progressing bonded state transition.

Abstract: The present invention provides a method for making a superabrasive composite material having the general formula SixCyNz, and tools containing such a material. In one aspect, vapor forms of Si, C, and N elements are deposited onto a molten metal catalyst and solid SixCyNz is precipitated therefrom.

Abstract: A structure protected by a ceramic coating is prepared by providing a substrate having a surface, and depositing a layer of a sacrificial ceramic precursor material, preferably silica, onto the surface of the substrate. The method further includes furnishing a reactive gas, preferably an aluminum-containing gas, that is reactive with the sacrificial ceramic to produce a protective ceramic different from the sacrificial ceramic, and contacting the reactive gas to the layer of the precursor material to produce a protective ceramic layer.

Abstract: This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (N2O) and ozone (O3). The presence of O3 in the oxidizing ambiance greatly enhances the oxidation rate compared to an ambiance in which N2O is the only oxidizing agent. In addition to enhancing the oxidation rate of silicon, it is hypothesized that the presence of O3 interferes with the growth of a thin silicon oxynitride layer near the interface of the silicon dioxide layer and the unreacted silicon surface which makes oxidation in the presence of N2O alone virtually self-limiting. The presence of N2O in the oxidizing ambiance does not impair oxide reliability, as is the case when silicon is oxidized with N2O in the presence of a strong, fluorine-containing oxidizing agent such as NF3 or SF6.

Abstract: A nickel base single crystal compliant layer on a ceramic blade has the capability to sustain high stresses and high operating temperature. Layers of nickel and platinum bonded on a single crystal superalloy over a sputtered gold-chromium layer support the high stress levels at elevated temperature without extrusion of the soft platinum or nickel layer and without destruction of an NiO compliant surface. The compliant layers have survived stress and temperature conditions without failure to the ceramic blade and the system can be stressed/heated and unloaded/cooled repeatedly without damage to the ceramic blades. A single crystal nickel base superalloy (i.e., SC180) has high strength properties at elevated temperature. Thin layers of chromium followed by gold are e-beam evaporated on one side of a polished surface of the alloy. Pure nickel is electroplated over this e-beam gold-chromium layer. Platinum is either electroplated or plated electrolessly over the nickel layer.

Abstract: A method for treating a metal enclosure to prevent the enclosure from being contaminated, comprises the steps of: (a) sand-blasting the enclosure; (b) preheating the enclosure to a predetermined temperature, and putting the enclosure into the space in a vacuum chamber between two electrodes; (c) introducing reactive gases into the vacuum chamber, the reactive gases including 1,1,3,3-tetramethyldisiloxane and oxygen; (d) applying high electrical power to the electrodes to cause the reactive gases to become an ionized plasma, the plasma reacting with a surface of the enclosure to form a layer of silicon oxide thereon. The layer of silicon oxide resists formation of a fingerprint when it is touched by a user.

Abstract: Vacuum/gas phase reactor embodiments used in gas phase dehydroxylation and alkylation reactions are described in which the substrate could be subjected to high vacuum, heated to target temperature, and treated with silane as quickly and efficiently as possible. To better facilitate the silylation and to increase the efficiency of the process, the reactor is designed to contain quasi-catalytic surfaces which can act both as an “activator” to put species in a higher energy state or a highly activated state, and as a “scrubber” to eliminate possible poisons or reactive by-products generated in the silylation reactions. One described embodiment is a hot filament reactor having hot, preferably metallic, solid surfaces within the reactor's chamber in which wafers having mesoporous silicate films are treated. Another is an IR reactor having upper and lower quartz windows sealing the upper and lower periphery of an aluminum annulus to form a heated chamber.

Abstract: A semiconductor substrate is placed within a housing. By supplying organometallic complexes and carbon dioxide in a supercritical state into the housing, a BST thin film is formed on a platinum thin film, while at the same time, carbon compounds, which are produced when the BST thin film is formed are removed. The solubility of carbon compounds in the supercritical carbon dioxide is very high, and yet the viscosity of the supercritical carbon dioxide is low. Accordingly, the carbon compounds are removable efficiently from the BST thin film. An oxide or nitride film may also be formed by performing oxidation or nitriding at a low temperature using water in a supercritical or subcritical state, for example.

Abstract: A method for forming a titanium film and a titanium nitride film on a surface of a substrate by lamination, by which contamination of the substrate due to the by-product is suppressed and the contact resistance of the titanium film is reduced. The method comprises the steps of forming a titanium film on the surface of the substrate using a first process gas containing TiCl4 and a reducing gas, subjecting the substrate to a plasma process using a second process gas containing N2 gas and a reducing gas, thereby decreasing Cl in the titanium film and nitriding the surface of the titanium film to form a nitride layer, and forming a barrier metal (e.g., a titanium nitride film) on the titanium film having the nitride layer. Thus, the titanium film and the titanium nitride film are formed on the substrate by lamination. The second process gas contains N2 gas in a ratio of 0.5 or lower with respect to the reducing gas.