Abstract: A system and method are provided for implementing a unique scheme by which to execute digital vapor phase patterning on metals, semiconductor substrates and other surfaces using a proposed variable data digital lithographic image forming architecture or technique. For certain substrate printing and manufacturing applications, including some printed electronics applications, the disclosed schemes implement techniques to digitally pattern metal layers with bulk material properties in a manner that is aligned with underlying layers on the fly. The disclosed digital printing process may pattern a release oil on a substrate in support of a metal deposition process. Changeable patterning is implemented with an ability to modify the alignment of the patterns on-the-fly. The release layer on a drum is laser patterned in order that the patterned release layer is transferred to the substrate, or the patterning of the release layer is accomplished directly on the substrate.

Abstract: Surface modification device forms a discharge area E1 between a discharge electrode 6 and a counter electrode 4, supplies substitution gas to the discharge area E1, and modifies the surface of the base material to be processed. The surface modification device comprises; a slit-shaped substitution gas passage; and cover members 7, 8 that form curtain passages 22, 23 in spaces facing the discharge electrode. While the substitution gas is being supplied to the discharge area E1, gas injected from the curtain passages 22, 23 prevent the inflow of an entrained flow a and the outflows b1, b2 of the substitution gas, thereby maintaining the concentration of substitution gas inside the discharge area E1.

Abstract: An improved fluid delivery system and method that directly controls the concentration of constituent components in a fluid mixture delivered, for example, to a process chamber. Pressure of the fluid mixture can also be directly controlled. A concentration sensor capable of measuring concentration of all of the constituent components in a fluid mixture is used to provide signals used to vary the flow rate of constituent gases under a closed loop feedback system. The signal output of one or more pressure sensors can also be used to provide a signal used to vary the flow rate of constituent gases under a closed loop feedback system. By directly controlling these two extremely important process variables, embodiments of the present invention provide a significant advantage in measurement accuracy over the prior art, enable real-time process control, reduce system level response time, and allow for a system with a significant footprint reduction.

Abstract: Described herein is a technique capable of suppressing a deviation in a thickness of a film formed on a substrate. According to one aspect of the technique of the present disclosure, a substrate processing apparatus includes a substrate retainer capable of supporting substrates; a cylindrical process chamber including a discharge part and supply holes; partition parts arranged in the circumferential direction to partition supply chambers communicating with the process chamber through the supply holes; nozzles provided with an ejection hole; and gas supply pipes. The supply chambers includes a first nozzle chamber and a second nozzle chamber, the process gas includes a source gas and an assist gas, the nozzles includes a first nozzle for the assist gas flows and a second nozzle disposed in the second nozzle chamber and through which the source gas flows, and the first nozzle is disposed adjacent to the second nozzle.

Abstract: A method and a device for forming a highly dielectric metal oxide layer. The method includes repeatedly causing a plasma-off period and a plasma-on period while an organic metal compound and an oxidizing agent are continuously injected into a chamber. One cycle includes one plasma-off period and one plasma-on period. During the plasma-off period, a physical and chemical adsorption layer including an organic metal compound and a plurality of atomic layers is formed on a substrate. During the plasma-on period, a metal oxide layer that is thicker than two atomic layers is formed by a chemical reaction of metal atoms in the physical and chemical adsorption layer and oxygen atoms in the oxidizing agent.

Abstract: An atmospheric pressure plasma generating device includes a nozzle block in which fourth gas passages from which plasma gas is emitted are formed, is covered by cover, and a through-hole is formed in the cover such that the leading end of the fourth gas passage is positioned on the inside. Heated gas is supplied inside the cover and is emitted from the through-hole of the cover, and plasma gas is emitted so as to penetrate the heated gas. By the plasma gas being surrounded by the heated gas in this manner, deactivation of the plasma gas is prevented. A distance between the leading end of the fourth gas passage and an opening of the through-hole at an outer wall of the cover is set from 0 to 2 mm in an emission direction of the plasma gas.

Abstract: In a roll to roll fabricating system, a plurality of deposition units are provided, and a turning unit is disposed between the deposition units. The deposition units include: a deposition drum on which a film is wound; and one or more evaporators disposed to face the deposition drum, and configured to deposit the film wound on the deposition drum. The turning unit includes a plurality of turning rolls, and is configured to turn the film output from one deposition unit, to guide the film, and to supply the film to another deposition unit.

Abstract: Embodiments described herein provide a chamber having a gas flow inlet guide to uniformly deliver process gas and a gas flow outlet guide to effectively purge process gasses and reduce purge time. The chamber includes a chamber body having a process gas inlet and a process gas outlet, a lid assembly, a process gas inlet and a process gas outlet configured to be in fluid communication with a processing region in the chamber, a gas flow inlet guide disposed in the process gas inlet, and a gas flow outlet guide disposed in the process gas outlet. The gas flow inlet guide includes a flow modulator and at least two first inlet guide channels having first inlet guide channel areas that are different. The gas flow outlet guide includes at least two first outlet guide channels having first outlet guide channel areas that are different.

Abstract: A vacuum processing system for a flexible substrate is provided. The processing system includes a first chamber adapted for housing one of a supply roll for providing the flexible substrate and a take-up roll for storing the flexible substrate; a second chamber adapted for housing one of a supply roll for providing the flexible substrate and a take-up roll for storing the flexible substrate; a maintenance zone between the first chamber and the second chamber; and a first process chamber for depositing material on the flexible substrate, wherein the second chamber is provided between the maintenance zone and the first process chamber. The maintenance zone allows for maintenance access to at least one of the first chamber and the second chamber.

Abstract: Described herein is a technique capable of improving the productivity of a substrate processing system including a plurality of process chambers. According to the technique described herein, there is provided a method of manufacturing a semiconductor device, including: (a) placing a storage container accommodating substrates on a loading port shelf; (b) transferring the substrates in a predetermined order from the storage container to process chambers capable of processing the substrates; (c) perform a substrate processing in the process chambers; (d) generating first count data corresponding to the processing chambers; (e) storing the first count data; (f) assigning transfer flag data to one of the process chambers next to another of the process chambers corresponding to a maximum count number of the first count data; and (g) transferring substrates accommodated in a next storage container of the storage container in the predetermined order based on the transfer flag data.

Abstract: The present invention relates to a glass having a surface with improved water-repellency or hydrophobicity and low reflectance, and a fabrication method thereof. A technology is employed, in which a thin film containing silicon or silicon oxide is formed on the glass surface, the nano-structures are formed by selective etching treatment using a reactive gas such as CF4 or the like to provide superhydrophobicity and low reflectance properties, and a material with low surface energy is coated onto the nano-structures. The fabrication method of the low-reflective and superhydrophobic or super water-repellent glass may execute deposition and etching processes for the glass having the superhydrophobicity and the low reflectance, and provide excellent superhydrophobicity and low reflectance to the surface of the glass which was difficult to be treated. Also, the method is sustainable due to non-use of a toxic etching solution during these processes.

Abstract: Gas distribution assemblies and processing chambers using same are described. The gas distribution assemblies comprise a cooling plate with a quartz puck, a plurality of reactive gas sectors and a plurality of purge gas sectors suspended therefrom. The reactive gas sectors and purge gas sectors having a coaxial gas inlet with inner tubes and outer tubes, the inner tubes and outer tubes in fluid communication with different gas or vacuum ports in the front faces of the sectors. The sectors may be suspended from the cooling plate by a plurality of suspension rods comprising a metal rod body with an enlarged lower end positioned within a quartz frame with a silicon washer around the enlarged lower end.

Abstract: An organic layer deposition assembly for depositing a deposition material on a substrate includes a deposition source configured to spray the deposition material, a deposition source nozzle arranged in one side of the deposition source and including deposition source nozzles arranged in a first direction, a patterning slit sheet arranged to face the deposition source nozzle and having patterning slits in a second direction that crosses the first direction, and a correction sheet arranged between the deposition source nozzle and the patterning slit sheet and configured to block at least a part of the deposition material sprayed from the deposition source.

Abstract: A gas floated workpiece supporting apparatus includes a gas upward ejector ejecting gas upward, and a gas downward ejector located at an upper side from the gas upward ejector and ejecting gas downward. The gas downward ejector is installed at a position where the gas downward ejector ejects the gas downward from above a plate-shaped workpiece to apply pressure to the plate-shaped workpiece that is floated and supported by the gas ejected from the gas upward ejector, whereby a uniform floating amount supports the plate-shaped workpiece with high flatness at a time of floating and supporting the plate-shaped workpiece.

Abstract: A method of forming an optical coating, including the steps: depositing a buffer layer on a glass substrate via plasma deposition at a first plasma bias voltage; and depositing at least one layer of an optical coating on the buffer layer via plasma deposition, the deposition of the optical coating carried out at a second plasma bias voltage.

Abstract: Provided is a method for manufacturing a solar cell with improved output characteristics. A hydrogen radical treatment, in which ions are not used, is performed on at least one of the first and second semiconductor layers (11, 13).

Abstract: A method for creating a functional coating on a substrate in vacuum from a deposited monomer material in absence of oxygen and/or radiation from a radiation source. The substrate may be preliminarily activated with inert gas to form an activated layer thereon. The method may include depositing a fluorine containing monomer having a first CF3:CF2 ratio, and forming, on the substrate, the self-assembled polymer coating that has a second CF3:CF2 ratio, where the first and second CF3:CF2 ratios are equal.

Abstract: To provide a plasma processing device and a plasma processing method capable of generating plasma stably and efficiently and processing the entire desired treated region of a substrate efficiently for a short period of time.

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

Abstract: Systems and methods for forming solar cells with CuInSe2 and Cu(In,Ga)Se2 films are provided. In one embodiment, a method comprises: during a first stage (220), performing a mass transport through vapor transport of an indium chloride (InClx) vapor (143, 223) and Se vapor (121, 225) to deposit a semiconductor film (212, 232, 252) upon a substrate (114, 210, 230, 250); heating the substrate (114, 210, 230, 250) and the semiconductor film to a desired temperature (112); during a second stage (240) following the first stage (220), performing a mass transport through vapor transport of a copper chloride (CuClx) vapor (143, 243) and Se vapor (121, 245) to the semiconductor film (212, 232, 252); and during a third stage (260) following the second stage (240), performing a mass transport through vapor transport of an indium chloride (InClx) vapor (143, 263) and Se vapor (121, 265) to the semiconductor film (212, 232, 252).

Abstract: An organic material for a light emitting device is deposited over a substrate by evaporating the organic material from an evaporation source. The evaporation source comprises a plurality of discrete evaporation cells separated from each other, wherein each of the plurality of discrete evaporation cells contains the organic material. The evaporation source has a length along a first direction and a width along a second direction orthogonal to the first direction, the length being greater than the width. The plurality of discrete evaporation cells is arranged along the first direction. When the organic material is evaporated, a relative location of the evaporation source with respect to the substrate is changed along the second direction, and the evaporation of the organic material is initiated by heating the plurality of discrete evaporation cells.

Abstract: A mask for thin film deposition used in forming an organic thin film or a conductive layer in an organic light emitting device is disclosed. In one embodiment, the mask includes i) a base member, ii) a plurality of slits configured to penetrate through the base member, wherein the plurality of slits have a predetermined length and extend in a first direction, wherein the plurality of slits comprise an outermost slit positioned in an outermost in a second direction having a predetermined angle with respect to the first direction, and wherein the outermost slit comprises two sub-slits separated from each other and iii) a rib supporting part formed between and contacting the two sub-slits, wherein the rib supporting part extends from a rib which is adjacent to the outermost slit.

Abstract: A high quality thin film is formed by forming a layer in which remaining residues are suppressed for each cycle. When a substrate sequentially passes through a first processing region, a second processing region, and a third processing region by rotating a substrate placement unit, a first layer is formed on the substrate while the substrate passes through the first processing region, a second layer is formed by reacting plasma of a reactive gas with the first layer while the substrate passes through the second processing region, and the second layer is modified by plasma of a modifying gas while the substrate passes through the third processing region.

Abstract: Systems and methods for atomic layer deposition (ALD) on a flexible substrate involve guiding the substrate back and forth between spaced-apart first and second precursor zones, so that the substrate transits through each of the precursor zones multiple times. Systems may include a series of turning guides, such as rollers, spaced apart along the precursor zones for supporting the substrate along an undulating transport path. As the substrate traverses back and forth between precursor zones, it passes through a series of flow-restricting passageways of an isolation zone into which an inert gas is injected to inhibit migration of precursor gases out of the precursor zones. Also disclosed are systems and methods for utilizing more than two precursor chemicals and for recycling precursor gases exhausted from the precursor zones.

Abstract: Method and apparatus for producing glancing angle deposited thin films. There is a source of collimated vapour flux, the source of collimated vapour flux having a deposition field; and a travelling substrate disposed within the deposition field of the source of collimated vapour flux, the collimated vapor flux being collimated at a defined non-zero angle to a normal to the travelling substrate.

Abstract: There is provided a film-forming apparatus including a roll-to-roll mechanism and a heating unit. The roll-to-roll mechanism is configured to transport a film-forming target and includes a tensile force relaxation unit configured to relax a tensile force applied to the transported film-forming target. The heating unit is configured to heat the film-forming target transported by the roll-to-roll mechanism.

Abstract: A rotating type thin film deposition apparatus having an improved structure that allows continuous deposition, and a thin film deposition method used by the rotating type thin film deposition apparatus are provided. The rotating type thin film deposition apparatus includes a deposition device; a circulation running unit that runs a deposition target on a circulation track via a deposition region of the deposition device; and a support unit that supports the deposition target and moves along the circulation track. Thin layers can be precisely and uniformly formed on the entire surface of a deposition target, and since deposition is performed while a plurality of deposition targets move along a caterpillar track, a working speed is faster compared to a method involving a general reciprocating motion, and the size of the thin film deposition apparatus can be reduced.

Abstract: Various fluoropolymers have been proposed for imparting oil and water repellency to leather. Commonly, these fluoropolymers are amphiphilic; i.e., they are made from at least one monomer which is hydrophobic and at least one monomer which is hydrophilic. The present invention identifies and remedies disadvantages associated with the ability of amphiphilic fluoropolymers to impart oil and water repellency to leather. Contrary to conventional thinking, it has now been discovered that the incorporation of hydrophilic groups in a fluoropolymer undesirably reduces its ability to impart water resistance to leather. Correspondingly, it has also been discovered that a fluoropolymer incorporating fewer or no hydrophilic groups imparts superior oil and water repellency to leather when compared to fluoropolymers incorporating more hydrophilic groups. Therefore, this invention provides fluoropolymers which incorporate reduced levels of hydrophilic groups.

Abstract: An injector for forming films respectively on a stack of wafers is provided. The injector includes a plurality of hole structures. Every adjacent two of the wafers have therebetween a wafer spacing, and each of the wafers has a working surface. The hole structures respectively correspond to the respective wafer spacings. The working surface and a respective hole structure have therebetween a parallel distance. The parallel distance is larger than a half of the wafer spacing. A wafer processing apparatus and a method for forming films respectively on a stack of wafers are also provided.

Abstract: A vapor deposition apparatus, which is capable of performing a thin film deposition process and improving characteristics of a formed thin film, includes a chamber having an exhaust opening; a stage located in the chamber, and including a plurality of mounting surfaces on which the plurality of substrates may be mounted; and an injection unit having at least one injection opening for injecting a gas into the chamber in a direction parallel with surfaces of the plurality of substrates.

Abstract: An apparatus for continuous sulfonization of discrete articles comprising a feeder box for drying the discrete articles with ultra-dry air, a sulfonization chamber for treating the discrete articles with sulfur trioxide gas, a conveyor assembly for transporting the discrete articles from the feeder box to the sulfonization chamber, and a neutralizing tank for treating the discrete articles with neutralizing fluid. The sulfonization chamber includes a rotating dial plate with a circular periphery and an upper surface extending radially from and rotatable about a center axis (A) for receiving the discrete articles at the circular periphery. A plurality of arcuate guides extend perpendicularly from a guide arm toward the rotating dial plate and are spaced radially outward from one another along a radial (R) extending radially from the center axis (A) for moving the discrete articles radially inward in a spiral path during rotation of the rotating dial plate.

Abstract: An apparatus for depositing an organic material and a depositing method thereof, wherein a deposition process is performed with respect to a second substrate while transfer and alignment processes are performed with respect to a first substrate in a chamber, so that loss of an organic material wasted in the transfer and alignment processes can be reduced, thereby maximizing material efficiency and minimizing a processing tack time. The apparatus includes a chamber having an interior divided into a first substrate deposition area and a second substrate deposition area, an organic material deposition source transferred to within ones of the first and second substrate deposition areas to spray particles of an organic material onto respective ones of first and second substrates and a first transferring unit to rotate the organic material deposition source in a first direction from one of the first and second substrate deposition areas to an other of the first and second substrate deposition areas.

Abstract: A vacuum coating unit includes a reactive gas inlet, at least one PVD coating source with a laminar cathode and a substrate carrier containing a multiplicity of substrates. The substrate carrier forms a two dimensional horizontal extent, and the carrier is between at least two PVD coating sources. The substrates are cutting tools with at least one cutting edge in their peripheral margin region, which are distributed in a plane of the two dimensional extent of the substrate carrier. The substrate carrier is in a horizontal plane in the vacuum process chamber spaced between the laminar cathodes of the PVD coating sources and positioned such that at least a portion of each of the at least one cutting edge includes an active cutting edge and this active cutting edge is oriented opposite at least one of the cathodes of the PVD coating sources exposed at any time along a line of sight.

Abstract: Disclosed is an evaporation method to form a thin film over a substrate, which is characterized in the use of an evaporation source equipped with a plurality of evaporation cells. The evaporation source has a rectangular shape with a long side and a short side wherein the long side is longer than the short side. At least one of the evaporation source and the substrate is relatively moved during the evaporation, which allows the formation of a thin film having a highly uniform thickness in a short time.

Abstract: A method of depositing a layer includes spraying a source gas and a reactant gas onto a substrate disposed on a susceptor unit using at least one source gas spray nozzle and at least one reactant gas nozzle to form a first source gas region and a first reactant gas region on the substrate, respectively, moving the susceptor unit by a distance corresponding to a width of the source gas spray nozzle or a width of the reactant gas spray nozzle in a first direction, and spraying the source gas and the reactant gas onto the first reactant gas region and the first source gas region using the source gas spray nozzle and the reactant gas nozzle, respectively, to form a first monolayer.

Abstract: Disclosed is a preparation method of a radiation image conversion panel by a vapor deposition method, in which a support member is supported and rotated and the stimulable phosphor evaporated from the evaporation source is deposited onto the support member to form a stimulable phosphor layer. The radiation image conversion panel manufactured by the method is also disclosed.

Abstract: The invention relates to a method and an apparatus for coating one or more objects (1) by exposing an object (1) to alternately repeating surface reactions of two or more gaseous precursors. The apparatus comprises a reaction chamber (2, 40), means for forming at least one distinct precursor region inside the reaction chamber, and means for causing translational, essentially mechanically unsupported and unsuspended, motion of an object (1) inside the reaction chamber, relative to the reaction chamber, for bringing the surface of the object (1) into contact with a gaseous precursor, the means for causing the translational motion comprising means for moving the object (1) essentially through the at least one distinct precursor region inside the reaction chamber.

Abstract: A method for forming a parylene film is provided, which includes following steps. Providing a chemical vapor deposition apparatus including a buffer chamber having first and second valves and a rotative carrying apparatus, an evaporator connected with the second valve, a pyrolysis chamber connected with the evaporator, and a deposition chamber connected with the pyrolysis chamber. Placing a parylene material in the rotative carrying apparatus of the buffer chamber through the first valve. Turning off the first and second valves and balancing a pressure in the buffer chamber and a pressure in the evaporator. Turning on the second valve and delivering the parylene material into the evaporator. Evaporating the parylene material in the evaporator to form a parylene gas. Pyrolyzing the parylene gas in the pyrolysis chamber to form a parylene monomer. Delivering the parylene monomer to the deposition chamber for deposition so as to form a parylene film.

Abstract: A multilayer encapsulation thin-film and a method and apparatus for preparing a multilayer encapsulation thin-film are provided. The multilayer encapsulation thin-film includes an inorganic thin film that includes a metal oxide, and an organic thin film that includes a polymer and is formed on the inorganic thin film, where the inorganic thin film and the organic thin film are alternately stacked in multiple layers.

Abstract: Processes for growing carbon nanotubes on carbon fiber substrates are described herein. The processes can include depositing a catalyst precursor on a carbon fiber substrate, optionally depositing a non-catalytic material on the carbon fiber substrate, and after depositing the catalyst precursor and the optional non-catalytic material, exposing the carbon fiber substrate to carbon nanotube growth conditions so as to grow carbon nanotubes thereon. The carbon nanotube growth conditions can convert the catalyst precursor into a catalyst that is operable for growing carbon nanotubes. The carbon fiber substrate can remain stationary or be transported while the carbon nanotubes are being grown. Optionally, the carbon fiber substrates can include a barrier coating and/or be free of a sizing agent. Carbon fiber substrates having carbon nanotubes grown thereon are also described.

Abstract: A method comprising introducing a workpiece support into a chamber of an apparatus. The workpiece support is for supporting thereon a plurality of workpieces. The apparatus comprising: the chamber having an interior space configured to be maintained at a pressure below atmospheric pressure; a vapor source for supplying the interior space of the chamber with a linearly extending stream of lubricant vapor; the workpiece support for supporting thereon a plurality of workpieces with surfaces facing the vapor source; and a conveyor for continuously moving the workpiece support transversely past the linearly extending stream of lubricant vapor from the vapor source. The method also comprising continuously moving the workpiece support with the plurality of workpieces supported thereon transversely past the linearly extending stream of lubricant vapor from the vapor source and depositing a uniform thickness film of the lubricant on at least one surface of each of the plurality of workpieces.

Abstract: A method for surface treating a carbon-containing material in which carbon-containing material is reacted with decomposing ozone in a reactor (e.g., a hollow tube reactor), wherein a concentration of ozone is maintained throughout the reactor by appropriate selection of at least processing temperature, gas stream flow rate, reactor dimensions, ozone concentration entering the reactor, and position of one or more ozone inlets (ports) in the reactor, wherein the method produces a surface-oxidized carbon or carbon-containing material, preferably having a surface atomic oxygen content of at least 15%. The resulting surface-oxidized carbon material and solid composites made therefrom are also described.

Abstract: A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material, wherein one or more of the gas flows provides a pressure that at least contributes to the separation of the surface of the substrate from the face of the delivery head. A system capable of carrying out such a process is also disclosed.

Abstract: Methods for growing carbon nanotubes on glass substrates, particularly glass fiber substrates, are described herein. The methods can include depositing a catalytic material or a catalyst precursor on a glass substrate; depositing a non-catalytic material on the glass substrate prior to, after, or concurrently with the catalytic material or catalyst precursor; and exposing the glass substrate to carbon nanotube growth conditions so as to grow carbon nanotubes thereon. The glass substrate, particularly a glass fiber substrate, can be transported while the carbon nanotubes are being grown thereon. Catalyst precursors can be converted into a catalyst when exposed to carbon nanotube growth conditions. The catalytic material or catalyst precursor and the non-catalytic material can be deposited from a solution containing water as a solvent. Illustrative deposition techniques include, for example, spray coating and dip coating.

Abstract: Atomic layer deposition is performed by reciprocating a susceptor in two directions, subjecting a substrate on the susceptor to two different sequences of processes. By subjecting the susceptor to different sequences of processes, the substrate undergoes different processes that otherwise would have required an additional set of injectors or reactors. The reduced number of injectors or reactors enables a more compact deposition device, and reduces the cost associated with the deposition device.

Abstract: An injector for forming films respectively on a stack of wafers is provided. The injector includes a plurality of hole structures. Every adjacent two of the wafers have therebetween a wafer spacing, and each of the wafers has a working surface. The hole structures respectively correspond to the respective wafer spacings. The working surface and a respective hole structure have therebetween a parallel distance. The parallel distance is larger than a half of the wafer spacing. A wafer processing apparatus and a method for forming films respectively on a stack of wafers are also provided.

Abstract: A method for synthesizing a thin film, the method containing the steps of: (a) providing a substrate support assembly containing at least two selectively interdigitable substrate support fixtures; (b) loading a substrate for thin film synthesis onto said at least two fixtures; (c) interdigitating said at least two fixtures; (d) positioning said at least two fixtures in a reaction chamber and forming a thin film on a surface of the substrate; and (e) unloading the substrate from said at least two fixtures.

Abstract: A method and apparatus to evenly distribute gas over a wafer in batch processing. Several techniques are disclosed, such as, but not limited to, angling an injector to distribute gas towards a proximate edge of the wafer, and/or reducing the amount of overlap in the center of the wafer of gas from subsequent gas injections.

Abstract: A process and an apparatus for producing a composite material utilize a rotatable hollow body that is inclined with an upstream side being higher than a downstream side. A reaction zone is defined within an elongated chamber in the hollow body. Protrusions inwardly extend from an inner peripheral wall of the hollow body adjacent to the reaction zone. Base material is input into the chamber via a base material introduction port and a carbon source vapor is input into the chamber via a carbon source supply port. A heater heats the reaction zone to a temperature at which carbon nanotubes form on the base material from the carbon source vapor. The protrusions catch base material disposed on the inner peripheral wall of the hollow body when the hollow body rotates and then drop the base material through the reaction zone so that the base material contacts the carbon source vapor.

Abstract: The present invention consists of an implantable structural element for in vivo delivery of bioactive active agents to a situs in a body. The implantable structural element may be configured as an implantable prosthesis, such as an endoluminal stent, cardiac valve, osteal implant or the like, which serves a dual function of being prosthetic and a carrier for a bioactive agent. Alternatively, the implantable structural element may simply be an implantable article that serves the single function of acting as a time-release carrier for the bioactive agent.