Abstract: This invention provides a method of making a fluorinated precursor of a superconducting ceramic. The method comprises providing a solution comprising a rare earth salt, an alkaline earth metal salt and a copper salt; spraying the solution onto a substrate to provide a film-covered substrate; and heating the film-covered substrate in an atmosphere containing fluorinated gas to provide the fluorinated precursor.

Abstract: A method of manufacturing a superconducting thin film material includes a vapor phase step of forming a superconducting layer by a vapor phase method and a liquid phase step of forming a superconducting layer by a liquid phase method so that the latter superconducting layer is in contact with the former superconducting layer. Preferably, the method further includes the step of forming an intermediate layer between the former superconducting layer and a metal substrate. The metal substrate is made of a metal, and preferably the intermediate layer is made of an oxide having a crystal structure of any of rock type, perovskite type and pyrochlore type, and the former superconducting layer and the latter superconducting layer both have an RE123 composition. Accordingly, the critical current value can be improved.

Abstract: A precursor for a Nb3Sn superconductor wire to be manufactured by the internal diffusion method. The precursor includes Nb-based single core wires, Sn-based single core wires, and a cylindrical diffusion barrier made of Ta or Nb. Each Nb-based single core wire includes a Nb-based core coated with a Cu-based coating made of a Cu-based matrix. Each Sn-based single core wire includes a Sn-based core coated with a Cu-based coating made of a Cu-based matrix. The Nb-based single core wires and the Sn-based single core wires are regularly disposed in the diffusion barrier. The Nb-based single core wires includes at least two kinds of Nb-based single core wires having different Cu/Nb ratios and the Cu/Nb ratio is a cross sectional area ratio of the Cu-based coating to the Nb-based core.

Abstract: An ion source impinging on the surface of the substrate to be coated is used to enhance a MOCVD, PVD or other process for the preparation of superconducting materials.

Abstract: A method of manufacturing superconductors with critical temperature Tc>300K is disclosed. This method is from a theory of high-Tc superconductivity wherein the doping mechanism is found. A kind of superconductors composed by this method is the AlB2-type superconductors obtained by doping AlB2-type intermetallics such as Sr1-xCaxGa2. Another kind of superconductors composed by this method is the CaCu5-type superconductors obtained by doping CaCu5-type intermetallics such as L1-xAxCu5, LCu5(10x)Ni5x(A-Ca, Sr; L-La, Y, Mm,), Sr1-xCaxCu5, La1-xSrx(1-y)CaxCu5. In particular the CaCu5-type intermetallics LaNi5 and MmNi5 are superconductors with critical temperature Tc>300K. These CaCu5-type superconductors are with high critical current densities and thus are applicable for the transmission of electricity.

Abstract: The present invention relates to a method of producing a substrate, including the steps of preparing a substrate having a nickel layer formed on a copper layer through plating, subjecting the nickel layer to thermal treatment at 800-1000° C., and epitaxial-growing an intermediate layer on the nickel layer, after the step of subjecting the nickel layer to thermal treatment. According to the present invention, there can be provided a substrate that allows the orientation and flatness at the surface of a nickel layer to be improved, and a method of producing the substrate.

Abstract: Fabrication of yarns or other shaped articles from materials in powder form (or nanoparticles or nanofibers) using carbon nanotube/nanofiber sheet as a platform (template). This includes methods for fabricating biscrolled yarns using carbon nanotube/nanofiber sheets and biscrolled fibers fabricated thereby.

Abstract: A superconducting metallic glass transition-edge sensor (MGTES) and a method for fabricating the MGTES are provided. A single-layer superconducting amorphous metal alloy is deposited on a substrate. The single-layer superconducting amorphous metal alloy is an absorber for the MGTES and is electrically connected to a circuit configured for readout and biasing to sense electromagnetic radiation.

Abstract: A method for forming a superconducting wire with a tape substrate comprises dispensing the tape substrate, providing at least one reactor chamber to form at least one buffer material on the tape substrate based on determining at least one of a type of tape substrate, a type of superconductor material, and a type of buffer material, providing another reactor chamber to continuously form a layer of the superconductor material on a layer of the buffer material, and spooling the tape substrate with the layer of superconductor material.

Abstract: A method of manufacturing a tape-formed oxide superconductor, in which a tape-formed wire material (6 in FIG. 1) is extended between a pair of reels (5a and 5b). Besides, a reactive gas is supplied form the gas supply ports of a reactive gas supply pipe (3a) vertically to the upper side film surface of the tape-formed wire material (6), so as to react the film body of this tape-formed wire material into a superconducting layer, while at the same time, a gas after the reaction is discharged from the gas discharge ports of discharge pipes (4a and 4b) for discharging the gas after the reaction. Likewise, the reactive gas is supplied vertically to the lower side film surface of the tape-formed wire material (6), so as to react the film body of this tape-formed wire material into a superconducting layer, while at the same time, the gas after the reaction is discharged from the gas discharge ports of discharge pipes (4c and 4d) for discharging the gas after the reaction.

Abstract: An oxide superconductor with superconduction properties being improved by effectively introducing a pinning center thereinto and its fabrication method are disclosed. The superconductor has a high-crystallinity oxide superconductor film which is formed on a substrate with a <001> direction of crystal grain being oriented almost perpendicularly to the substrate and with (100) planes of neighboring crystal grains being oriented to form an oblique angle ranging from 0 to 4 degrees or 86 to 90 degrees. The film has a multilayer structure including a plurality of high-density magnetic field trap layers stacked in almost parallel to the substrate and a low-density magnetic field trap layer sandwiched therebetween. An average grain boundary width of the high-density trap layers in a cross-section horizontal to the substrate is 80 nm or less. The width is less than an average grain boundary width of the low-density trap layer in its cross-section horizontal to the substrate.

Abstract: Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.

Abstract: In a chemical vapor deposition process simple precursors such as a rare earth nitrate or acetate, Ba-nitrate or acetate and Cu-nitrate or acetate are dissolved in an appropriate solvent, preferably water, to form a solution, nebulized into a fine mist and applied to a substrate.

Abstract: A method of making a superconducting article that involves using MOCVD to deposit onto a uniaxially or biaxially textured surface an epitaxial layer that includes a superconducting material such as REBa2Cu3O7 and a secondary phase comprising at least one dopant, the dopant including Nb, Ta and/or V, or combinations thereof.

Abstract: This invention provides a thin superconducting oxide film, which can realize a high critical current, and a superconducting member having a high level of electric power resistance. The superconducting member comprises a sapphire R face substrate, a buffer layer formed of grain lumps of an oxide provided on the sapphire R face substrate, and a superconducting layer provided on the buffer layer. The nearest neighbor distance between oxygen atoms in the oxide and the grain diameter of grain lumps of the oxide have been specified. The superconducting member can be used as a member for superconducting filters.

Abstract: Disclosed is a low-cost metal substrate which is resistant to high-temperature oxidation, has excellent strength, is non-magnetic and is ideal for a high-temperature superconducting wire to be used at or lower than liquid nitrogen temperature. Austenitic stainless steel containing 0.4 weight or more of nitrogen is used as the metal substrate for the superconducting wire. After heat treatment of 700 to 950° C. in the high-temperature superconducting layer formation step is carried out, the metal substrate has an extremely high 0.20 proof stress at liquid nitrogen temperature.

Abstract: A method for producing a high temperature superconductor (=HTS) coated conductor (12), wherein a buffer layer (2; 22) and an HTS layer (4; 24; 65) are deposited on a substrate (1; 21), with the following steps: a) after depositing the buffer layer (2; 22), the surface (2a) is locally roughened, resulting in a roughened surface (13), b) a non-superconducting, closed intermediate layer (3; 23) is deposited on top of the roughened surface (13), c) and the HTS layer (4; 24; 65) is deposited on top of the intermediate layer (3; 23). A simple method for producing a HTS coated conductor with reduced losses, and with improved critical current and critical magnetic field is thereby provided.

Abstract: To prepare a superconducting fault-current limiting element having a high sharing electric field at low cost, a superconducting fault-current limiting element includes an insulator substrate; a superconductive thin film formed on the insulator substrate; and an alloy layer formed on the superconducting thin film, said alloy layer having a room-temperature resistivity higher by twice or more than the room-temperature resistivity of a pure metal, in which, when the superconducting thin film goes into a normal conductive state by an overcurrent, the overcurrent flowing through the superconducting thin film is transferred only to the alloy layer.

Abstract: A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

Abstract: A high temperature superconductor structure including: a substrate on which at least one buffer layer is deposited, a superconductor layer on the buffer layer, the superconducting layer composed of superconductor material that forms at least two substantially parallel superconductor filaments that continuously extend along the length of the substrate wherein at least two superconductor filaments are separated from each other by at least one insulating strip wherein the insulating strip continuously extends along the length of the substrate and is composed of insulating material with a resistivity greater than about 1 m?cm. Also disclosed are methods of producing high temperature superconductors.

Abstract: A coated conductor comprising an improved buffer layer architecture where the buffer layers are obtainable by chemical solution deposition and where the buffer layers essentially adopt the degree of texture of the substrate.

Abstract: The invention relates to platinum complexes, to a method for preparing the same and to the use thereof for the chemical vapour deposition of metal platinum. The chemical vapour deposition of platinum onto a substrate is made from a platinum organometallic compound that includes a ligand with a cyclic structure including at least two non-adjacent C?C double bonds, and the platinum organometallic compound has a square-plane structure in which the platinum is bonded to each of the C?C double bonds of the ligand, thereby forming a (C?C)—Pt—(C?C) of 60° to 70°.

Abstract: A method of fabricating a superconducting coil is provided which includes fabricating individual coil windings by depositing, shaping and texturing superconductive material in situ on a former which has a substantially curved surface.

Abstract: A new family of superconducting materials with critical temperature up to 55 K have recently been discovered, comprising a crystal structure with atomic layers of iron and arsenic alternating with atomic layers of rare-earth oxide or alkaline earth. The present invention identifies structures for integrated circuit elements (including Josephson junctions) in these and related materials. These superconducting circuit elements will operate at a higher temperature than low-temperature superconductors such as niobium, and may be easier to manufacture than prior-art high-temperature superconductors based on copper-oxides.

Abstract: An object of the present invention is to provide a method of fabricating a superconducting wire that can reduce the fabrication cost and increase the mechanical strength of the superconducting wire, and a superconducting apparatus including a superconducting wire obtained by the method. The present invention provides a method of fabricating a superconducting wire including the steps of forming a superconducting layer on a substrate or an intermediate layer formed on the substrate, forming a silver stabilization layer on the superconducting layer, immersing the substrate in a copper sulfate solution after the superconducting layer and the silver stabilization layer are formed thereon, and forming a copper stabilization layer on the silver stabilization layer by electroplating with the copper sulfate solution as a plating bath. A superconducting apparatus including a superconducting wire obtained by the method is also provided.

Abstract: Disclosed herein is a gradient thin film, formed on a substrate by simultaneously depositing different materials on the substrate using a plurality of thin film deposition apparatuses provided in a vacuum chamber, wherein the gradient thin film is formed such that the composition thereof is continuously changed depending on the thickness thereof by deposition control plates provided in the path through which the different materials move to the substrate. The gradient thin film is advantageous in that the thin film is formed by simultaneously depositing different materials using various deposition apparatuses, so that the composition thereof is continuously changed depending on the thickness thereof, with the result that the physical properties of a thin film are easily controlled and the number of deposition processes is decreased, and thus processing time and manufacturing costs are decreased, thereby improving economic efficiency.

Abstract: Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic, superconducting and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.

Abstract: A method for manufacturing a superconducting wire includes the following steps. A laminate metal having a first metal layer and a Ni layer formed on the first metal layer is prepared. An intermediate layer is formed on the Ni layer of the laminate metal. A superconducting layer is formed on the intermediate layer. By subjecting the laminate metal to a heat treatment after at least either of the step of forming a intermediate layer and the step of forming a superconducting layer, a nonmagnetic Ni alloy layer is formed from the laminate metal.

Abstract: Disclosed herein is a precursor solution for forming a biaxially oriented buffer layer through low-temperature heat treatment, by which a highly oriented buffer layer can be formed even when the precursor solution is heat-treated at a low temperature of 1000° C. or lower at the time of forming a buffer layer through a wet chemical method. The precursor solution is prepared by adding a carboxylate or an alkoxide of bismuth, boron, lead, gallium, or the like, which is a metal salt for forming an oxide having a low melting point of 1200° C. or lower after pyrolysis in an oxygen atmosphere, to a precursor solution for forming a buffer layer through a wet chemical method.

Abstract: Disclosed is a composition for forming a thick oxide superconductor film, the oxide being an RE-BA-Cu based oxide, wherein RE is at least one element selected from the group consisting of Y, Nd, Sm, Gd, Eu, Yb, Pr, and Ho. The composition contains an RE salt of a keto acid having 4 to 8 carbon atoms as an RE component, barium trifluoroacetate as a Ba component, at least one copper salt selected from the group consisting of a copper salt of a branched saturated aliphatic carboxylic acid having 6 to 16 carbon atoms and a copper salt of an alicyclic carboxylic acid having 6 to 16 carbon atoms as a Cu component, and an organic solvent dissolving these metal salt components. In the composition, the RE to Ba to Cu molar ratio is 1:1.3 to 2.2:2.4 to 3.

Abstract: A method and apparatus for manufacturing superconducting tape through an integrated process, including the steps of: heat-treating a substrate wound on a drum in a reaction chamber; continuously depositing components, constituting a buffer layer, a superconducting layer, a contact resistance layer, and a protective layer of the superconducting tape, which are supplied from a deposition chamber, on the substrate; and heat-treating the substrate deposited with the components.

Abstract: Provided is a substrate for superconductive film formation, which includes a metal substrate, and an oxide layer formed directly on the metal substrate, containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm. A method of manufacturing a substrate for superconductive film formation, which includes forming an oxide layer directly on a metal substrate, the oxide layer containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm.

Abstract: RE superconductive layer excelling in Jc and Tc is formed on an interlayer capable of preventing cracking and diffusion of substrate-constituting Ni element into YBCO layer and excelling in crystallinity and surface smoothness. The interlayer is formed by coating a surface of metal substrate with a mixed solution composed of an organometallic acid salt of cerium, an organometallic acid salt of a solid solution formation element capable of forming a solid solution with cerium and an organometallic acid salt of a charge compensation element capable of compensating for a charge mismatch attributed to a difference between the electron valences of respective ions of cerium and the solid solution formation element and subsequently carrying out heat treatment in a reducing atmosphere of 900 to 1200° C. whose pressure ranges from 0.1 Pa to below atmospheric pressure. Thereafter, a rare earth oxide superconductive layer is formed on the interlayer.

Abstract: A magnesium boride thin film having a B-rich composition represented by the general formula of MgBx (x=1 to 10) and a superconducting transition temperature of 10K or more has superior crystallinity and orientation and is used as a superconducting material. This thin film is formed by maintaining a film forming environment in a high vacuum atmosphere of 4×10?5 Pa or less, and simultaneously depositing Mg and B on a substrate maintained at a temperature of 200° C. or less so as to grow the film at a growth rate of 0.05 nm/sec or less. It is preferable to supply an Mg vapor and a B vapor into the film forming environment at an Mg/B molar ratio of 1/1 to 12/1.

Abstract: A well-crystallized a-axis (or b-axis) oriented Bi-based oxide superconductor thin film is manufactured in order to obtain a high performance layered Josephson junction using a Bi-based oxide superconductor. In manufacturing a well-crystallized a-axis oriented Bi-based oxide superconductor thin film, a (110) plane of a single crystal substrate of LaSrAlO4 or a vicinal cut substrate of a single crystal of LaSrAlO4 is used, on which an a-axis oriented Bi-2223 or Bi-2201 thin film is heteroepitaxially grown at a low film forming temperature T1, then homoepitaxially grown on the grown film at a high film forming temperature T2 (double temperature growth method). Although it is difficult to grow an a-axis oriented film directly on a substrate at a high temperature T2, an a-axis oriented Bi-2223 or Bi-2201 thin film is formed on the base by previously forming the base film at low deposition temperature.

Abstract: An oxide superconductor film formed on a substrate includes an oxide containing at least one metal M selected from the group consisting of yttrium and lanthanoid metals, provided that cerium, praseodymium, promethium and ruthenium are excluded, and barium and copper, in which the film has an average thickness of 350 nm or more, an average amount of residual carbon of 3×1019 atoms/cc or more, and an amount of residual fluorine in a range of 5×1017 to 1×1019 atoms/cc, and in which, when divided the film into a plurality of regions from a surface of the film or from an interface between the film and the substrate, each region having a thickness of 10 nm, atomic ratios of copper, fluorine, oxygen and carbon between two adjacent regions are in a range of ? times to 5 times.

Abstract: A heavily boron-doped diamond thin film having superconductivity is deposited by chemical vapor deposition using gas mixture of at least carbon compound and boron compound, including hydrogen. An advantage of the diamond thin film deposited by the chemical vapor deposition is that it can contain boron at high concentration, especially in (111) oriented films. The boron-doped diamond thin film deposited by the chemical vapor deposition shows the characteristics of typical type II superconductor.

Abstract: It is possible to improve the negative resistance characteristic that can be expected when an SNS (superconductor-normal conductor-superconductor) structure is used as a structure unit for series connection. On the top of a first superconducting electrode, a second superconducting electrode is superimposed so as to sandwich an insulation film between the first and second superconducting electrodes, with parts of cross sections of the second superconducting electrode and insulation film placed on the top. A normal superconducting line electrically connects the first and second superconducting electrodes passing along the cross section of the insulation film, thereby constituting a structure unit having a single weak link. A plurality of such structure units connected in series are prepared. At the both ends of the series the first or second superconducting electrode is an element connected to a leading line.

Abstract: The present invention is a method of fabricating an oxide superconducting thin film for use in fabrication of a superconducting wire by a coating-pyrolysis process using a fluorine-free metal organic compound as a raw material. An intermediate heat treatment of decomposing a carbonate contained in a thin film to be subjected to a sintering heat treatment for a crystallizing heat treatment is conducted before the sintering heat treatment. The intermediate heat treatment is conducted in an atmosphere having a carbon dioxide concentration lower than or equal to 10 ppm. The metal organic compound is a metal organic compound containing a ?-diketone complex.

Abstract: An RE123-based oxide superconductor characterized by comprising a conductive layer containing an REBa2Cu3O7-?-based oxide superconductor formed using a mixed material of at least RE2BaO4 and a Bax—Cuy—Oz-based material and a holding member which holds said conductive layer, where, RE is one type or more of elements selected from La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu, and Y.

Abstract: Superconductor precursor solutions are disclosed. The precursor solutions contain, for example, a salt of a rare earth metal, a salt of an alkaline earth metal and a salt of a transition metal. The precursor solutions can optionally include a Lewis base. The precursor solutions can be processed relatively quickly to provide a relatively thick and good quality intermediate of a rare earth metal-alkaline earth metal-transition metal oxide.

Abstract: The present invention relates to a rare earth element oxide superconductive wire material improved in orientation by forming the bed layer by the MOD method. In the superconductive wire material (10) produced by forming a MOD-CZO layer (2), an IBS-GZO (3), an IBAD-MgO layer (4), a LMO layer (5), a PLD-CeO2 layer (6) and a PLD-GdBCO superconductive layer (8) in this order on an electropolished substrate (1) in an oxygen atmosphere, the CeO2 layer has a value of ??=4.2 degrees, which is almost the same as in the case of using a mechanically polished substrate, and the GdBCO super conductive layer has a value of Ic=243 A (Jc=up to 5 MA/cm2), which is almost the same as in the case of using a mechanically polished substrate.

Abstract: Operational characteristics of an high temperature superconducting (“HTS”) film comprised of an HTS material may be improved by depositing a modifying material onto appropriate surfaces of the HTS film to create a modified HTS film. In some implementations of the invention, the HTS film may be in the form of a “c-film.” In some implementations of the invention, the HTS film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified HTS film has improved operational characteristics over the HTS film alone or without the modifying material. Such operational characteristics may include operating in a superconducting state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the HTS material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO.

Abstract: In some implementations of the invention, existing high temperature superconducting materials (“HTS materials”) may be modified and/or new HTS materials may be created by enhancing (in the case of existing HTS materials) and/or creating (in the case of new HTS materials) an aperture within the HTS material such that the aperture is maintained at increased temperatures so as not to impede propagation of electrical charge there through. In some implementations of the invention, as long as the propagation of electrical charge through the aperture remains unimpeded, the material should remain in a superconducting state; otherwise, as the propagation of electrical charge through the aperture becomes impeded, the HTS material begins to transition into a non-superconducting state.

Abstract: Operational characteristics of an extremely low resistance (“ELR”) film comprised of an ELR material may be improved by depositing a modifying material onto appropriate surfaces of the ELR film to create a modified ELR film. In some implementations of the invention, the ELR film may be in the form of a “c-film.” In some implementations of the invention, the ELR film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified ELR film has improved operational characteristics over the ELR film alone or without the modifying material. Such operational characteristics may include operating in an ELR state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the ELR material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO.

Abstract: In some implementations of the invention, existing extremely low resistance materials (“ELR materials”) may be modified and/or new ELR materials may be created by enhancing (in the case of existing ELR materials) and/or creating (in the case of new ELR materials) an aperture within the ELR material such that the aperture is maintained at increased temperatures so as not to impede propagation of electrical charge there through. In some implementations of the invention, as long as the propagation of electrical charge through the aperture remains unimpeded, the material should remain in an ELR state; otherwise, as the propagation of electrical charge through the aperture becomes impeded, the ELR material begins to transition into a non-ELR state.

Abstract: The present invention relates to a method for producing a defect-containing superconducting film, the method comprising (a) depositing a phase-separable layer epitaxially onto a biaxially-textured substrate, wherein the phase-separable layer includes at least two phase-separable components; (b) achieving nanoscale phase separation of the phase-separable layer such that a phase-separated layer including at least two phase-separated components is produced; and (c) depositing a superconducting film epitaxially onto said phase-separated components of the phase-separated layer such that nanoscale features of the phase-separated layer are propagated into the superconducting film.

Abstract: A tape-manufacturing system for coating at least one tape substrate such as, for example, for the manufacture of a high-temperature superconductor (HTS) conductor is disclosed. The tape-manufacturing system includes at least two electron beam (e-beam) deposition sources, at least one assist source and, optionally, a controller. Each e-beam deposition source may be in-process repairable. Each e-beam deposition source is capable of communicating an evaporant material with at least a portion of at least one tape substrate to deposit a coating thereon. The at least one assist source is capable of communicating a beam of a species to the coating. The controller communicates with the at least two e-beam deposition sources and the at least one assist source.

Abstract: A method for manufacturing a high-temperature superconducting conductor includes translating an elongated substrate through a reactor. Further, a high temperature superconducting layer is formed on the substrate translating through the reactor by deposition of a reaction product of metalorganic precursor materials onto the substrate. Further, partial pressure of oxygen is monitored to indirectly monitor supply of metalorganic precursors into the reactor.

Abstract: Porous ceramic superconductors having a film thickness over 0.5 microns are provided. The superconducting material is applied to a vicinal substrate and optionally nanoparticles are inserted to release local strain. The resultant superconductors exhibit improved Jc values compared to nonvicinal (flat) counterparts and those having no nanoparticles.