Abstract: Subject matter disclosed herein may relate to correlated electron switches.

Abstract: Aspects of the present disclosure relate to. In one example, a method of controlling an additive manufacturing machine includes: determining a material transition between a first machine control code and a second machine control code in a set of machine control codes; determining a material transition time for the determined material transition between the first machine control code and the second machine control code; determining a motion time from the first machine control code and the second machine control code; comparing the material transition time to the motion time; and manipulating the set of machine control codes based on the comparison.

Abstract: Disclosed are methods, systems and devices for operation of dual non-volatile memory devices. In one aspect, a pair of non-volatile memory device coupled in series may be placed in complementary memory states any one of multiple memory states in write cycles by controlling a current and a voltage applied to terminals of the non-volatile memory device.

Abstract: A method for temporary coating of cavities, which at least partially run through a semiconductor substrate and are provided for a permanent coating and/or equipping, with a temporarily applied coating material before processing steps for processing at least one surface of the semiconductor substrate. In addition, a method for removing a temporary coating of cavities of a semiconductor substrate, whereby the coating is applied according to a previously-mentioned method and whereby, in particular immediately afterwards, a permanent coating and/or equipping of the cavities is carried out.

Abstract: A resistive switching memory comprising a first electrode and a second electrode; an active resistive switching region between the first electrode and the second electrode, the resistive switching region comprising a transition metal oxide and a dopant comprising a ligand, the dopant having a first concentration; a first buffer region between the first electrode and the resistive switching material, the first buffer region comprising the transition metal oxide and the dopant, wherein the dopant has a second concentration that is greater than the first concentration. In one embodiment, the second concentration is twice the first concentration. In one embodiment, the first buffer region is thicker than the active resistive switching region.

Abstract: Disclosed are methods, systems and devices for operation of dual non-volatile memory devices. In one aspect, a pair of non-volatile memory device coupled in series may be placed in complementary memory states any one of multiple memory states in write cycles by controlling a current and a voltage applied to terminals of the non-volatile memory device.

Abstract: A vibration layer is formed by the AD method on a cavity plate before forming pressure chambers, a common electrode is formed on the vibration layer, and a piezoelectric layer is formed on the common electrode by the AD method. Subsequently, the pressure chambers are formed in the cavity plate by the etching. After that, individual electrodes are formed on the piezoelectric layer. Subsequently, the stack of the cavity plate, the vibration layer, the common electrode, the piezoelectric layer, and the individual electrodes is heated at about 850° C. to simultaneously perform the annealing of the piezoelectric layer and the sintering of the individual electrodes and the common electrode. Accordingly, the atoms of the cavity plate are suppressed from being diffused into the driving portions of the piezoelectric layer.

Abstract: A sample contamination method according to an embodiment includes spraying a chemical solution containing contaminants into a casing, carrying a semiconductor substrate into the casing filled with the chemical solution by the spraying, leaving the semiconductor substrate in the casing filled with the chemical solution for a predetermined time, and carrying the semiconductor substrate out of the casing after the predetermined time passes.

Abstract: The present invention relates to a device and a method for coating a microstructured and/or nanostructured structured substrate. According to the present invention, the coating is performed in a vacuum chamber. The pressure level in the vacuum chamber is elevated during or after the charging of the vacuum chamber with coating substance.

Abstract: A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

Abstract: A method for atomizing a precursor liquid for vapor generation and thin film deposition on a substrate. The precursor liquid is atomized by a carrier gas to form a droplet aerosol composed of small precursor liquid droplets suspended in the carrier gas. The droplet aerosol is then heated to form vapor, producing a gas/vapor mixture that can be introduced into a deposition chamber to form thin films on a substrate. The liquid is introduced into the atomizing apparatus in such a manner as to avoid excessive heating that can occur or lead to the formation of undesirable by-products due to material degradation as result of thermal decomposition. The method is particularly suited for vaporizing high molecular weight substances with a low vapor pressure that requires a high vaporization temperature for the liquid to vaporize. The method can also be used to vaporize solid precursors dissolved in a solvent for vaporization.

Abstract: A deposition apparatus comprising one or more atomizers structurally integrated with a deposition head. The entire head may be replaceable, and prefilled with material. The deposition head may comprise multiple nozzles. Also an apparatus for three dimensional materials deposition comprising a tiltable deposition head attached to a non-tiltable atomizer. Also methods and apparatuses for depositing different materials either simultaneously or sequentially.

Abstract: In a method for producing especially doped layers for electronic, luminescent or photovoltaic components, especially OLEDs, one or more liquid or solid starting materials are evaporated in a source (11, 12, 13, 14) or are admixed as aerosol to a carrier gas and transported in this form to a deposition chamber (1) where they condense on a substrate (5), especially as a result of a temperature gradient, forming a doped matrix. In order to improve the doping of electronic, luminescent or photovoltaic layers, it is proposed that the doping occurs by modification of a starting material during its transport.

Abstract: The present invention relates to a reducing agent for low temperature reducing and sintering of copper nanoparticles and a method for low temperature sintering using the same. The reducing agent includes formic acid or acetic acid and C1 to C3 alcohol or ether which allows reducing and sintering at a low temperature of less than 250° C. The sintered copper nanoparticles provide excellent electrical properties and are suitable for forming fine wirings patterns.

Abstract: A method for producing a piezoelectric actuator having a diffusion-preventive layer and a piezoelectric layer stacked on a vibration plate includes providing the vibration plate having a surface on which a groove is formed; and blowing an aerosol containing ceramics particles toward an area, on the surface of the vibration plate, in which the groove is formed from a first direction and a second direction different from the first direction by using an aerosol deposition method to form the diffusion-preventive layer on the vibration plate. The aerosol is blown toward the vibration plate in the first and second directions. Therefore, the material particles contained in the aerosol can be collided with the inner walls of the groove formed on the vibration plate as well, and thus the diffusion-preventive layer can be formed on the vibration plate without causing any unevenness.

Abstract: An apparatus for atomizing a precursor liquid for vapor generation and thin film deposition on a substrate. The precursor liquid is atomized by a carrier gas to form a droplet aerosol composed of small precursor liquid droplets suspended in the carrier gas. The droplet aerosol is then heated to form vapor, producing a gas/vapor mixture that can be introduced into a deposition chamber to form thin films on a substrate. The liquid is introduced into the atomizing apparatus in such a manner as to avoid excessive heating that can occur or lead to the formation of undesirable by-products due to material degradation as result of thermal decomposition. The apparatus is particularly suited for vaporizing high molecular weight substances with a low vapor pressure that requires a high vaporization temperature for the liquid to vaporize. The apparatus can also be used to vaporize solid precursors dissolved in a solvent for vaporization.

Abstract: A liquid material drawing method includes: performing a first discharging step in which at least one of the droplets the liquid material is discharged from at least one of a plurality of nozzles for each of a plurality of pixel regions; observing and capturing an image of the pixel regions on a workpiece in which the droplets are discharged; computing a distance in a first direction and a distance in an orthogonal second direction between barrier parts on the workpiece and a landing position of the at least one of the droplets in the image of the pixel regions; and correcting arrangement information including a relative positioning of the nozzles and the workpiece, which is used to arrange a prescribed number of the droplets as dots for each of the pixel regions, based on the distance in the first direction and the distance in the second direction.

Abstract: There is provided a substrate processing apparatus equipped with a metallic component, with at least a part of its metallic surface exposed to an inside of a processing chamber and subjected to baking treatment at a pressure less than atmospheric pressure. As a result of this baking treatment, a film which does not react with various types of reactive gases, and which can block the out diffusion of metals, is formed on the surface of the above-mentioned metallic component.

Abstract: A liquid material is placed on a substrate as a droplet to form a film on the substrate. At least either one of a concentration of solids in the liquid material and a drying rate of the droplets is used as a parameter to control a form of a dried film of the droplets. Moreover, a first droplet is placed on a substrate, the first droplet is dried to form a dried film of a form in which a thickness of an edge is larger than that of a central part, and a second droplet is placed in a region surrounded by the edge section of a dried film of the first droplet to form a dried film of the second droplet. Furthermore, the liquid material is placed on the substrate as a droplet to form a film on the substrate, and a dried film of the droplet is formed by contracting the droplet.

Abstract: A method of making a variable resistance material (VRM), the method comprising providing a precursor comprising a metallorganic or organometallic solvent containing a metal moiety suitable for forming the VRM, depositing the precursor on a substrate to form a thin film of the precursor, and heating the thin film to form the VRM. The preferred solvent comprises octane.

Abstract: Methods and apparatus for the deposition of a source material (10) are disclosed. An atomizer (12) renders a supply of source material (10) into many discrete particles. A force applicator (14) propels the particles in continuous, parallel streams of discrete particles. A collimator (16) controls the direction of flight of the particles in the stream prior to their deposition on a substrate (18). In an alternative embodiment of the invention, the viscosity of the particles may be controlled to enable complex depositions of non-conformal or three-dimensional surfaces. The invention also includes a wide variety of substrate treatments which may occur before, during or after deposition. In yet another embodiment of the invention, a virtual or cascade impactor may be employed to remove selected particles from the deposition stream.

Abstract: Methods of reducing the intrusions or migrations of photolithography materials by introducing a sol-gel layer onto a porous thin film prior to applying the photolithography/photoresist material layer. Curing the sol-gel layer results in the sol-gel layer merging or unifying with the underlying porous thin film layer so that the combined sol-gel/thin layer exhibits substantially the same properties as the untreated porous thin film layer before the sol-gel was applied. As a result, a greater etching accuracy is achieved.