Abstract: A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.

Abstract: A high-purity semi-insulating silicon carbide crystal growing apparatus and a method therefor are provided, the apparatus comprising a growth crucible, a bottom part of the growth crucible having inserted a gas pipe, a top part of the growth crucible being provided with a growth crucible cover, a feedstock crucible having a bowl-shaped structure being disposed in the growth crucible, an upper part of the feedstock crucible being provided with a baffle, a bottom part of the feedstock crucible being provided with a ring-shaped supporting feedstock crucible bottom foot, the diameter of the feedstock crucible bottom foot being ? the diameter of the feedstock crucible, and the feedstock crucible bottom foot having disposed thereon 8-36 evenly distributed gas holes.

Abstract: An adhesive composition comprising a polyurethane and a cationic polymeric dopant or a polymerizable cationic dopant may be used to form one or more adhesive layers of electro-optic assemblies. They enable improved electro-optic performance of the corresponding electro-optic devices even at low temperatures.

Abstract: Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed. A batch of buffer members (e.g., quartz cullets) is added to an outer melt zone of the crucible assembly before the main body of the ingot is grown. In some embodiments, the ratio of the mass M of the batch of buffer members added to the melt to the time between adding the batch of buffer members to the melt and when the ingot main body begins to grow is controlled such that the ratio of M/T is greater than a threshold M/T.

Abstract: An inflatable structure includes a top end cap, a bottom end cap, a bladder, a nozzle, a loop, and a first tether. The bladder is attached to the top and bottom end caps and is configured to hold pressurized fluid therebetween. The nozzle is configured to allow fluid to enter and exit the bladder. The loop is attached to one of the top and bottom end caps. A tether is disposed within the bladder, coupled to the other one of the top and bottom end caps, and extends through the at least one loop. The top end cap assumes a first position when the bladder is inflated. When the top end cap is adjusted from the first position to a second position, the first tether is configured to maintain the top end cap in the second position.

Abstract: Silicon carbide (SiC) wafers, SiC boules, and related methods are disclosed that provide improved dislocation distributions. SiC boules are provided that demonstrate reduced dislocation densities and improved dislocation uniformity across longer boule lengths. Corresponding SiC wafers include reduced total dislocation density (TDD) values and improved TDD radial uniformity. Growth conditions for SiC crystalline materials include providing source materials in oversaturated quantities where amounts of the source materials present during growth are significantly higher than what would typically be required. Such SiC crystalline materials and related methods are suitable for providing large diameter SiC boules and corresponding SiC wafers with improved crystalline quality.

Abstract: The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.

Abstract: A computer-implemented method executed on a processor for detecting whether a wafer has been tampered during a semiconductor fabrication process, the method including, at a plurality of patterning steps where lithographic patterns are defined and etched or at a plurality of fabrication processing steps, marking, via an identification tool, each die with an unclonable identification in a memory array, inspecting, via an inspection tool, each of the dies, and removing compromised wafers from a wafer pool during the semiconductor fabrication process.

Abstract: Lithium ion battery anodes including graphenic carbon particles are disclosed. Lithium ion batteries containing such anodes are also disclosed. The anodes include mixtures of lithium-reactive metal particles such as silicon, graphenic carbon particles, and a binder. The use of graphenic carbon particles in the anodes results in improved performance of the lithium ion batteries.

Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

Abstract: An endless belt includes a substrate layer, and a first surface layer that is disposed on an outer circumferential surface of the substrate layer and that includes a cross-linked fluororesin layer. A layer containing a cross-linked fluororesin forms the inner circumferential surface of the belt. Martens hardness of the inner circumferential surface of the belt at 130° C. is higher than Martens hardness of the outer circumferential surface of the belt at 130° C.

Abstract: A method for preparing phthalocyanine nanospheres is provided, including: synthesizing an ionic phthalocyanine molecule of formula I according to a following chemical scheme: wherein M is Cu or Zn, X is Br or Cl, R1, R2, R3, and R4 are aromatic substituent groups; dissolving at least one ionic phthalocyanine molecule selected from the formula I in a solvent to form a solution; preparing a two-dimensional layer crystalline material with an opposite charge to the ionic phthalocyanine molecule; adding the two-dimensional layer crystalline material to the solution; heating the solution to evaporate a portion of the solvent to aggregate the ionic phthalocyanine molecule into phthalocyanine nanospheres between a film layer of the two-dimensional layer crystalline material; and separating the phthalocyanine nanospheres from the film layer of the two-dimensional layer crystalline material.

Abstract: An electronic apparatus. The electronic apparatus includes a flexible display panel and a support for supporting the flexible display panel. The flexible display panel has a display area and a peripheral area, and an edge groove in the peripheral area defining an edge portion of the flexible display panel. The edge portion being on a side of the edge groove distal to the display area. The support has a first support groove configured to receive the edge portion of the flexible display panel. The flexible display panel is bent about the edge groove, facilitating insertion of the edge portion of the flexible display panel into the first support groove.

Abstract: The present invention relates to a flexible electrode and a method for manufacturing the same. According to an embodiment of the present invention, the flexible electrode includes a substrate 10, a bonding layer 20 formed by adsorbing an amino group (NH2)-containing monomolecular material on the substrate 10, and a conductive layer 30 formed by coating metal nanoparticles 31 on the bonding layer 20.

Abstract: This semiconductor device is formed by stacking a plurality of semiconductor chips that each have a plurality of bump electrodes, each of the plurality of semiconductor chips being provided with an identification section formed on a respective side face. Each semiconductor chip has a similar arrangement for its respective plurality of bump electrodes, and each identification section is formed so that the positional relationship with a respective reference bump electrode provided at a specific location among the respective plurality of bump electrodes is the same in each semiconductor chip. The plurality of semiconductor chips are stacked such that the bump electrodes provided thereon are electrically connected in the order of stacking of the semiconductor chips, while the side faces on which the identification sections are formed are oriented in the same direction.

Abstract: Substrate processing techniques to alleviate missing contact holes, scummed contact holes and scummed caused bridging are disclosed. In one embodiment, electromagnetic radiation (EMR) absorbing molecules are utilized in a process that uses an initial patterned exposure followed by a flood exposure. In one embodiment, a Photo-Sensitized Chemically-Amplified Resist (PSCAR) resist process is utilized to form contact holes in which an initial exposure and develop process is performed followed by a flood exposure and a second develop process. In another embodiment, a process is utilized in which precursors of EMR absorbing molecules are incorporated into a layer underlying the resist layer. Thus, enhanced formation of EMR absorbing molecules will result at the interface of the resist layer and the underlying layer.

Abstract: The present disclosure provides a method for preparing a doped YAG single crystal fiber. The method may include placing a doped YAG single crystal fiber core into a growth zone and placing a raw material into a dissolution zone; adding a mineralizer into the growth chamber to cause the mineralizer to immerse the raw material and the doped YAG single crystal fiber core; heating the growth zone and the dissolution zone by a two-stage heating device, respectively; and preparing a doped YAG single crystal fiber by growing a YAG single crystal fiber cladding on a surface of the doped YAG single crystal fiber core based on the doped YAG single crystal fiber core and the raw material under a preset pressure.

Abstract: Provided is a production method that can easily produce a calcium carbonate porous sintered body. The production method includes the steps of: preparing a dispersion liquid containing calcium carbonate and a gelling agent; adding a foaming agent to the dispersion liquid, followed by stirring until foamy to make a foam; turning the foam into a gel; and sintering the gelled foam to produce a calcium carbonate porous sintered body.

Abstract: An optical element where a first and a second image is at least partially encoded by a pattern of a non-periodic, anisotropic surface relief microstructure such that when light is incident on the surface of the element the first image is optimally visible under a first viewing angle and the second image is optimally visible under a second viewing angle. The optical element is particularly useful for securing documents and articles against counterfeiting and falsification.

Abstract: An optical element where a first and a second image is at least partially encoded by a pattern of a non-periodic, anisotropic surface relief microstructure such that when light is incident on the surface of the element the first image is optimally visible under a first viewing angle and the second image is optimally visible under a second viewing angle. The optical element is particularly useful for securing documents and articles against counterfeiting and falsification.

Abstract: A dielectric layer is formed from an oxide containing Sn and at least one of Zn, Zr, Si and Ga. The molar percentages of Sn, Zn, Zr, Si, and Ga, relative to the total elements in the oxide, represented by a, b, c, d, and e, respectively, satisfy the conditions (1)-(7): (1) 0?b/(a+b)?0.6, (2) 0?(c+d)/(a+b+c+d+e)?0.5, (3) 0?b?50, (4) 0?c?40, (5) 0?d?45, (6) 0?e?40, and (7) 20?b+c+d+e?80. The dielectric layer enables favorable information recording in an oxide-based recording layer on which the dielectric layer is directly overlaid, does not require preventive measures for health hazard, and is superior in durability.

Abstract: Semiconductor wafers useful for NAND circuitry and having a front side, a rear side, a middle and a periphery, have an Nv region which extends from the middle to the periphery; a denuded zone which extends from the front side to a depth of not less than 20 ?m into the interior of the semiconductor wafer, where the density of vacancies in the denuded zone, determined by means of platinum diffusion and DLTS is not more than 1×1013 vacancies/cm3; a concentration of oxygen of not less than 4.5×1017 atoms/cm3 and not more than 5.5×1017 atoms/cm3; a region in the interior of the semiconductor wafer which adjoins the denuded zone and has nuclei which can be developed by means of a heat treatment into BMDs having a peak density of not less than 6.0×109/cm3, where the heat treatment comprises heating the semiconductor wafer to a temperature of 800° C. over a period of four hours and to a temperature of 1000° C. over a period of 16 hours. The wafers are produced by a unique RTA treatment of Nv wafers.

Abstract: A phase change memory cell is provided that includes a phase change material-containing structure sandwiched between first and second electrodes. The phase change material-containing structure has an electrical conductance that changes gradually and thus may be used in analog or neuromorphic computing. The phase change material-containing structure includes two phase change material pillars that are composed of different phase change materials that exhibit an opposite change of electrical resistance (or inversely electrical conductance) during a SET operation and a RESET operation.

Abstract: An anti-fogging and anti-fouling laminate, including: a substrate; and an anti-fogging and anti-fouling layer on the substrate where a surface of the anti-fogging and anti-fouling layer is flat, wherein the anti-fogging and anti-fouling layer is a cured product obtained by curing an active energy ray curable resin composition through an active energy ray, wherein the active energy ray curable resin composition includes a hydrophilic monomer having a radically polymerizable unsaturated group and a photopolymerization initiator, wherein a content of the hydrophilic monomer having a radically polymerizable unsaturated group in the active energy ray curable resin composition is 60% by mass or more, and wherein a surface of the anti-fogging and anti-fouling layer has a pure water contact angle of 90° or more.

Abstract: A vehicle steering wheel comprising: a hoop, a plurality of presence sensors, each one arranged so as to detect a proximity and/or contact between a user's limb and the hoop, an outer sheath covering the plurality of presence sensors and stitched with at least one seam that extends around at least part of the hoop, wherein the plurality of presence sensors is mounted on the same support, and in that at least one of the presence sensors is arranged facing at least part of the seam of the outer sheath.

Abstract: Provided are a kit and a laminate which are capable of suppressing residues derived from a temporary adhesive in manufacture of a semiconductor. The kit for manufacturing a semiconductor device includes a composition which contains a solvent A; a composition which contains a solvent B; and a composition which contains a solvent C, in which the kit is used when a temporary adhesive layer is formed on a first substrate using a temporary adhesive composition containing a temporary adhesive and the solvent A, at least some of an excessive amount of the temporary adhesive on the first substrate is washed using the composition containing the solvent B, a laminate is manufactured by bonding the first substrate and a second substrate through the temporary adhesive layer, one of the first substrate and the second substrate is peeled off from the laminate at a temperature of lower than 40° C.

Abstract: A cutting element for an earth-boring tool includes a substrate and a polycrystalline, superabrasive material secured to an end of the substrate. The polycrystalline, superabrasive material includes a curved, stress-reduction feature located at least on the first transition surface. The cutting element includes at least one recess defined in the curved, stress-reduction feature of the polycrystalline, superabrasive material. The at least one recess includes sidewalls intersecting with a front surface of the stress-reduction feature of the polycrystalline, superabrasive material and extending to a base wall within the polycrystalline, superabrasive material. The curved, stress-reduction feature includes an undulating edge formed proximate a peripheral edge of the polycrystalline, superabrasive material and a waveform extending from the undulating edge toward the center longitudinal axis of the cutting element.

Abstract: Provided is an optical recording medium including two or more recording layers, and a light irradiation surface that is irradiated with light for recording an information signal on the two or more recording layers. Among the two or more recording layers, at least one layer other than a layer located on the deepest side from the light irradiation surface includes an oxide of a metal A, an oxide of a metal B, and an oxide of a metal C. The metal A is at least one kind among W, Mo, and Zr, the metal B is Mn, and the metal C is at least one kind among Cu, Ag, and Ni. Ratios of the metal A, the metal B, and the metal C satisfy a relationship of 0.46?x1 (provided that, x1=a/(b+0.

Abstract: The invention relates to a manufacturing process of semiconductor material of element III nitride from a starting substrate, the process comprising: the formation of an intermediate layer based on silicon on a starting substrate, said intermediate layer comprising at least two adjacent zones of different crystalline orientations, especially a monocrystalline zone and an amorphous or poly-crystalline zone, growth via epitaxy of a layer of element III nitride on said intermediate layer, the intermediate layer being intended to be vaporised spontaneously during the step consisting of growing the layer of element III nitride via epitaxy.

Abstract: A color shifting security device has a Fabry-Perot type structure wherein a dielectric layer is disposed between a reflector and an absorbing layer. The absorber and reflector layers may be conforming and the dielectric layer therebetween is non-conforming, filling the regions in the micro structured adjacent absorbing or reflecting layer, at least one of which has a microstructure therein or thereon. By having the dielectric layer not conform to the microstructure it is next to, its thickness varies in cross section, which allows for different colors to be seen where the thickness varies.

Abstract: A n-type SiC single crystal with low resistivity and low threading dislocation density is provided, which is achieved by a n-type SiC single crystal containing germanium and nitrogen, wherein the density ratio of the germanium and the nitrogen [Ge/N] satisfies the relationship 0.17<[Ge/N]<1.60.

Abstract: A process for binding a top substrate to a base substrate is disclosed, in which (a) a liquid optically clear photo-curable adhesive is applied onto the top side of the base substrate, (b) the liquid optically clear photo-curable adhesive is partially cured by exposure to electromagnetic radiation comprising a wavelength ranging from 200 nm to 700 nm, (c) the top substrate is attached on the partially cured adhesive layer of step (b), (d) the adhesive is fully cured by exposure to electromagnetic radiation comprising a wavelength ranging from 200 nm to 700 nm.

Abstract: A crystal orientation layer laminated structure capable of widely selecting materials for a base substrate and an electrode substrate, an electronic memory using the crystal orientation layer laminated structure and a method for manufacturing the crystal orientation layer laminated structure are provided. The crystal orientation layer laminated structure according to the present invention has such a feature as including a substrate, including an orientation control layer which is laminated on the substrate, which is made of any of germanium, silicon, tungsten, germanium-silicon, germanium-tungsten and silicon-tungsten, and whose thickness is at least 1 nm or more, and including a first crystal orientation layer which is laminated on the orientation control layer, which is made of any of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe and Bi2Se3 as a main component, and which is oriented in a certain crystal orientation.

Abstract: Embodiments relate to polycrystalline diamond compacts (“PDCs”) including a substrate and a polycrystalline diamond (“PCD”) table mounted to the substrate. The PCD table includes an upper surface and one or more recesses extending inwardly from the upper surface of the PCD table. The one or more recesses may help prevent, stop, or limit crack propagation and may redistribute, breakup, or relieve stresses in the PCD table. In some embodiments, the one or more recesses exhibit, in plain view, a generally rectangular geometry, a generally circular geometry, or a generally triangular geometry. In some embodiments, the PCD table includes one or more channels that extend from a vertex of the one or more recesses. In some embodiments, the one or more channels and the one or more recesses may be at least partially filled with a sacrificial material. Methods for forming such PDCs are also discussed.

Abstract: Disclosed are T7 RNA polymerase variants with enhanced transcriptional activity. T7 RNA polymerase variants are known which have the ability to incorporate modified ribonucleotides into growing RNA molecules. However, these variants have relatively low levels of transcriptional activity. Presented herein are mutations that increase the transcriptional activity of the variants with broad substrate range.

Abstract: In some embodiments, a method of making a polycarbonate composition comprises: polymerizing by an interfacial polymerization, reactants comprising a starting material comprising a bisphenol-A to form a bisphenol-A polycarbonate, wherein the bisphenol-A has a purity of greater than or equal to 99.65 wt % and a sulfur content of less than or equal to 2 ppm. The polycarbonate composition has a free hydroxyl content of less than or equal to 150 ppm, and wherein a molded article of the polycarbonate composition has transmission level greater than or equal to 90.0% at 2.5 mm thickness as measured by ASTM D1003-00 and a yellow index (YI) less than or equal to 1.5 as measured by ASTM D1925.

Abstract: An optical information storage medium includes a multilayer film that includes a plurality of extruded alternating active data storage layers and buffer layers, which separate the active data storage layers. The active data storage layers and buffer layers have thicknesses that allow the active data storage layers to be writable by non-linear or threshold writing processes to define data voxels within the active data storage layers that are readable by an optical reading device.

Abstract: An Ag alloy film used for a reflecting electrode or an interconnection electrode, the Ag alloy film exhibiting low electrical resistivity and high reflectivity and having exceptional oxidation resistance under cleaning treatments such as an O2 plasma treatment or UV irradiation, wherein the Ag alloy film contains either In in an amount of larger than 2.0 atomic % to 2.7 atomic % or smaller; or Zn in an amount of larger than 2.0 atomic % to 3.5 atomic % or smaller; or both. The Ag alloy film may further contain Bi in an amount of 0.01 to 1.0 atomic %.

Abstract: A method of forming a cutting element for an earth-boring tool may include directing at least one energy beam at a surface of a volume of polycrystalline superabrasive material including interstitial material disposed in regions between inter-bonded grains of polycrystalline superabrasive material. The method includes ablating the interstitial material with the at least one energy beam such that at least a portion of the interstitial material is removed from a first region of the volume of polycrystalline superabrasive material without any substantial degradation of the inter-bonded grains of superabrasive material or of bonds thereof in the first region.

Abstract: A method of determining information relating to the mass of a semiconductor wafer is disclosed. The method comprises loading the semiconductor wafer on to a measurement area of a weighing device having weight compensation means arranged to compensate for a predetermined weight loaded on to the measurement area; generating measurement output indicative of a difference between the weight of the semiconductor wafer and the predetermined weight; and using the measurement output to determine information relating to the mass of the semiconductor wafer. Also discloses is a corresponding weighing device for determining information relating to the mass of a semiconductor wafer.

Abstract: A piezoelectric optical micro-electro-mechanical systems (POMEMS) device includes a glass layer having a bottom surface and a top surface. The device may also include an upper moisture barrier layer having a top surface and a bottom surface in which the bottom surface of the top moisture barrier layer is substantially coextensive with and interfaces with the top surface of the glass layer. A piezo stack may be attached above the upper moisture barrier layer. The device may also include a lower moisture barrier layer having a bottom surface and a top surface. The top surface of the lower moisture barrier layer is substantially coextensive with and interfaces with the bottom surface of the glass layer. A semiconductor substrate may be attached below the bottom moisture barrier layer.

Abstract: An apparatus for forming a flange has a laminate component and a drum supporting the laminate component. A forming tool selectively engages the laminate component. A diaphragm member extends between the drum and the laminate component and selectively engages the forming tool. Movement of the diaphragm member deforms the laminate component away from the drum about an edge of the forming tool, and the laminate component maintains a substantially uniform thickness.

Abstract: A protective case for an electronic device includes a main housing and a lid. The main housing and lid are removably joined to define a water tight volume receiving an electronic device. Air trapped within the protective case transfers acoustic energy from a sound source within the case to at least one membrane wherein the membrane vibrates in response to an air pressure differential transmitting sound to an exterior of the case.

Abstract: A transparent ultraviolet curable adhesive is a solventless composition, based on a total weight of the composition, being composed of 35-65 wt % of a polyurethane (meth)acrylate resin, 30-60 wt % of a (meth)acrylate monomer, 0.1-5 wt % of an acrylate group-containing bisphenol fluorene derivative, 0.3-8 wt % of a photopolymerization initiator and 0.002-0.01 wt % of a vinyl silane coupling agent; and, the adhesive if cured has a refractive index of 1.52-1.56 very close to 1.52 for a glass thereof and has a visible light transmittance of 93-99 VLT (%) so suitable to be adhered to displays, transparent conductive film and touch panels.

Abstract: Methods for selecting titania-doped quartz glass which experiences a reduction in OH group concentration of less than or equal to 100 ppm upon heat treatment at 900° C. for 100 hours as suitable material for the EUV lithography member.

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

Abstract: An electronic device includes a semiconductor substrate, an insulating material-filled layer and a vertical conductor. The semiconductor substrate has a vertical hole extending in a thickness direction thereof. The insulating material-filled layer is a ring-shaped layer filled in the vertical hole for covering an inner periphery thereof and includes an organic insulating material or an inorganic insulating material mainly of a glass and a nanocomposite ceramic. The nanocomposite ceramic has a specific resistance of greater than 1014 ?·cm at room temperature and a relative permittivity of 4 to 9. The vertical conductor is a solidified metal body filled in an area surrounded by the insulating material-filled layer.

Abstract: An aromatic polycarbonate resin composition for a fluorescence detection and analysis substrate by which autofluorescence of an aromatic polycarbonate resin, which has been avoided as a resin for a fluorescence detection and analysis substrate due to a critical defect thereof of having fluorescence in a visible light wavelength region, is significantly decreased, and is highly heat-resistant and highly transparent; and a fluorescence detection and analysis substrate produced by melt molding performed on the aromatic polycarbonate resin composition.

Abstract: A heat-resistant roll with improved characteristics, a production method thereof, and a method of producing sheet glass using the heat-resistant roll. A method of producing a heat-resistant roll equipped with a roll portion containing 5% by weight or more of clay includes: a grinding step (S101) of grinding a roll surface of the roll portion; and a surface treatment step (S102) of performing surface treatment of smoothening the ground roll surface in a wet state.

Abstract: A method of manufacturing a substrate with a patterned layer of deposited material, the patterned layer being deposited from a processing head, the method comprising applying bearing gas from the processing head to keep the processing head hovering over the substrate on a gas bearing; moving the substrate and the hovering processing head relative to each other; applying a primer material for selective deposition of a deposition material to the substrate, the primer material being applied from a first area of a surface of the processing head that faces the substrate, and spatially patterning the primer on the substrate after or during application; applying the deposition material to the substrate from a second area of the surface of the processing head that faces the substrate, the second area lying downstream of the first area in a direction of the movement of the substrate relative to the processing head.