Abstract: The invention relates to inorganic, intermetallic, inhomogeneous compounds having a magnetic resistance effect and an intrinsic field sensitivity of at least 7% at 1 T at room temperature. The invention further relates to a method for the production and use thereof, particularly as magnetic field sensors or in spin electronics.

Abstract: A magnetoresistive tunnel junction sensor having improved free layer stability, as well as improved free sensitivity. The free layer is constructed to have a low magnetic coercivity which improves free layer sensitivity. The free layer is also constructed to have a negative magnetostriction which improves free layer stability by preventing the free layer from having an easy axis that is oriented perpendicular to the air bearing surface.

Abstract: A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by FeWCoXNiYVZ in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V, respectively, and where w is between about 60 and 85, x is between about 10 and 30, y is between 0 and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. An electroplating process having a plating current density of 3 to 30 mA/cm2 is used to deposit the magnetic layer and involves an electrolyte solution with a small amount of VOSO4 which is the V source. The resulting magnetic layer has a magnetic saturation flux density BS greater than 1.9 Telsa and a resistivity ? higher than 70 ?ohms-cm.

Abstract: This magnetic multilayer device comprises, on a substrate, an alternating sequence of magnetic metallic layers M and oxide, hydride or nitride layers O. The number of layers M equals at least two. The layers M are continuous. There is interfacial magnetic anisotropy perpendicular to the plane of the layers at the level of the M/O interfaces.

Abstract: A method and apparatus for a high-moment magnetic material used in a write head deposited on a gap layer that was grown using a nickel-chromium seed layer. The nickel-chromium seed layer provides the correct crystallographic orientation for both the nonmagnetic gap layer and the high-moment magnetic material such that the high-moment magnetic material has soft-magnetic properties and is useful as either a main pole or as shield layer in a write head. Moreover, the nickel-chronium seed layer, which may be exposed on the air bearing surface (ABS) of the write head, has an etch rate similar to other metals found in the ABS, thereby avoiding pole tip protrusion during later processing.

Abstract: The present invention generally relates to a write head pole laminate structure. The write head pole structure can include multiple multi-layer magnetic structures that are separated by a non-magnetic material that is amorphous or microcrystalline. Each multi-layer magnetic structure includes one or more first magnetic layers that are spaced from one or more second magnetic layers by a non-magnetic layer such that the one or more first magnetic layers are substantially identical to the one or more second magnetic layers. In such a design, the one or more second magnetic layers are antiparallel to the one or more first magnetic layers so that a zero total net magnetic moment is present for the multi-layer magnetic structure when current is removed from the write head pole.

Abstract: A layered structure includes an amorphous Ta layer, a metallic oxide layer formed from zinc oxide (ZnO) or magnesium oxide (MgO) on the Ta layer, and a FePt magnetic layer formed on the metallic oxide layer. Therefore, an L10 structural FePt ordered alloy is obtained at a temperature of 300° C. or lower.

Abstract: A memory is provided that is improved in cost, life, energy consumption and recording density over existing optical disks and hard disks and operates under novel principles, as well as its manufacturing method. A nonvolatile phase change magnetic memory comprises a substrate and a film loaded on the substrate, which film is of a crystalline transition metal chalcogenide compound that in composition is deficient in transition metal from its stoichiometric ratio composition and expressed by formula: AyX where A is a transition metal, X is a chalcogen element and 0<y<1, and in which film a minute portion subjected to a temperature history is made to form a ferromagnetic phase (1) or an antiferromagnetic phase (7) in which holes (4) for transition metal (2) are orderly or disorderly arranged and is stored with information as a magnetization based on the ferromagnetic phase (1) or antiferromagnetic phase (7).

Abstract: The present invention provides a magnetic latent image holding body in which the surface thereof has water repellency and a magnetic latent image is visualized by a liquid developer that contains a magnetic toner and an aqueous medium.

Abstract: Disclosed are a magnetic thin film capable of providing a high uniaxial magnetic anisotropy, Ku, while suppressing the saturation magnetization Ms thereof, and a method for forming the film; and also disclosed are various devices to which the magnetic thin film is applied. The magnetic thin film comprises a Co-M-Pt alloy having an L11-type ordered structure (wherein M represents one or more metal elements except Co and Pt). For example, the Co-M-Pt alloy is a Co—Ni—Pt alloy of which the composition comprises from 10 to 35 at. % of Co, from 20 to 55 at. % of Ni and a balance of Pt. The magnetic thin film is applicable to perpendicular magnetic recording media, tunnel magneto-resistance (TMR) devices, magnetoresistive random access memories (MRAM), microelectromechanical system (MEMS) devices, etc.

Abstract: A spin transport element 1 has a first ferromagnet 12A, a second ferromagnet 12B, a channel 7 extending from the first ferromagnet 12A to the second ferromagnet 12B, a magnetic shield S1 covering the channel 7, and an insulating film provided between the channel 7 and the magnetic shield S1.

Abstract: The present invention relates to a magnetic thin film containing a L11 type Co—Pt—C alloy in which atoms are orderly arranged, and can realize an order degree excellent in regard to the L11 type Co—Pt—C alloy to achieve excellent magnetic anisotropy of the magnetic thin film. Therefore, in the various application devices using the magnetic thin film, it is possible to achieve a large capacity process and/or a high density process thereof in a high level.

Abstract: Perpendicular magnetic recording (PMR) media and methods of fabricating PMR media are described. The PMR media includes, among other layers, an underlayer, a first onset layer on the underlayer, a second onset layer on the first onset layer, and a perpendicular magnetic recording layer on the second onset layer. The second onset layer has a magnetic moment which is higher than both a magnetic moment of the first onset layer and a magnetic moment of the perpendicular magnetic recording layer.

Abstract: A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies from 85 to 100 atomic % to maintain low Hc and ?S values. A small positive magnetostriction value in a Co75Fe25 layer is used to offset a negative magnetostriction value in a Ni90Fe10 layer. The CoFe layer is deposited on a sensor stack in which a seed layer, AFM layer, pinned layer, and non-magnetic spacer layer are sequentially formed on a substrate. After a NiFe layer and capping layer are sequentially deposited on the CoFe layer, the sensor stack is patterned to give a sensor element with top and bottom surfaces and a sidewall connecting the top and bottom surfaces. Thereafter, a dielectric layer is formed adjacent to the sidewalls.

Abstract: High magnetic moment films FeCo(X, Y), where X is a transition metal element and Y is a rare earth element are formed using off-axis static deposition techniques. The films have tunable magnetic anisotropy from 0 Oe to greater than 500 Oe that are thermally stable beyond nominal photoresist curing temperatures. By using off-axis static deposited FeCo(X, Y) films as seed layers to normally deposited FeCo films, inplane anisotropy and the magnetic moment can be controlled for specific design needs. Epitaxial-like growth (column-to-column matching) from the off-axis static FeCo(X,Y) seed layers to normally deposited FeCo films is attributed to sustained anisotropy in the entire film.

Abstract: A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeaCobNic (where a+b+c=100 at %, and a?75 at %, b?75 at %, and c?63 at %), or formed of an alloy having a body-centered cubic crystal structure.

Abstract: A process is described for the fabrication of a magnetic read head in which contact between the pinned layer and the AFM is limited to their edges. The principal steps are to deposit an antiferromagnetic layer and to then pattern it into a pair of antiferromagnetic layers separated by no more than about 2 microns. A layer of magnetic material that lies between, and is in contact with, said antiferromagnetic layers is then deposited, following which the layer of magnetic material is magnetized.

Abstract: Embodiments of the present invention provide a magnetic disk drive capable of allowing higher data transfer rates and higher recording densities. According to one embodiment, an upper magnetic core and lower magnetic core comprise a multi-layered magnetic film formed by alternately stacking a face-centered cubic (fcc) crystalline magnetic thin layer and a body-centered cubic (bcc) crystalline magnetic thin layer by plating. The plating bath is such that the temperature is about 30±1° C., pH is about 2.0?1.0 to 2.0+0.5, metal ion concentrations are about 5 to 25 (g/l) for Ni2+ and 5 to 15 (g/l) for Fe2+, saccharin sodium concentration is about 1.5±1.0 (g/l), sodium chloride concentration is about 25±5 (g/l), and boric acid concentration is about 25±5 (g/l). Since each layer's crystal structure is different from that of its adjacent lower layer, epitaxial growth is broken within each layer.

Abstract: A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer.

Abstract: A layered structure includes an amorphous Ta layer, a metallic oxide layer formed from zinc oxide (ZnO) or magnesium oxide (MgO) on the Ta layer, and a FePt magnetic layer formed on the metallic oxide layer. Therefore, an L10 structural FePt ordered alloy is obtained at a temperature of 300° C. or lower.

Abstract: A material comprising cobalt (Co), platinum (Pt) and phosphorus (P) having a composition of 94-98 wt % Co, 0-1 wt % Pt and 2-4 wt % P. The material may be subjected to annealing at a temperature between 100 and 500 degrees Celsius. The material is formed by electroplating a substrate in a suitable electrochemical bath. The electroplated CoPtP material forms a layer on the substrate. The CoPtP material has enhanced perpendicular magnetic properties and may be advantageous for use in microelectromechanical system (MEMS) devices.

Abstract: A technique includes forming overlaying magnetic metal layers over a semiconductor substrate. The technique includes forming at least one resistance layer between the magnetic metal layers.

Abstract: A laminated high moment film with a non-AFC configuration is disclosed that can serve as a seed layer for a main pole layer or as the main pole layer itself in a PMR writer. The laminated film includes a plurality of (B/M) stacks where B is an alignment layer and M is a high moment layer. Adjacent (B/M) stacks are separated by an amorphous layer that breaks the magnetic coupling between adjacent high moment layers and reduces remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. The amorphous material layer may be made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, Ti, Cr, Nb, or Si, or may be Hf, Zr, Ta, Nb, CoFeB, CoB, FeB, or CoZrNb. Alignment layers are FCC soft ferromagnetic materials or non-magnetic FCC materials.

Abstract: An object is to provide a magnetic sensor permitting an increase in potential output. The magnetic sensor has a channel layer, a magnetization free layer provided on a first portion of the channel layer and configured to detect an external magnetic field, and a magnetization fixed layer provided on a second portion different from the first portion of the channel layer, and a cross-sectional area of the magnetization fixed layer in a surface opposed to the channel layer is larger than a cross-sectional area of the magnetization free layer in a surface opposed to the channel layer.

Abstract: A magnetic material composed of ?-InxFe2-xO3 (wherein 0<x?0.30) crystal in which In is substituted for a portion of the Fe sites of the ?-Fe2O3 crystal. The crystal exhibits an X-ray diffraction pattern similar to that of an ?-Fe2O3 crystal structure and has the same space group as that of an ?-Fe2O3. The In content imparts to the magnetic material a magnetic phase transition temperature that is lower than that of the ?-Fe2O3 and a spin reorientation temperature that is higher than that of the ?-Fe2O3. The In content can also give the magnetic material a peak temperature of the imaginary part of the complex dielectric constant that is higher than that of the ?-Fe2O3.

Abstract: A method for creating a write element of a magnetic head according to one embodiment includes forming a first pole pedestal; forming a write gap layer above the first pole pedestal; forming a second pole pedestal above the write gap layer; and forming at least one of: a cap layer of CoFeON between the first pole pedestal and the write gap, and a seed layer of CoFeON between the write gap layer and the second pole pedestal. Note that other layers may be interspersed between those set forth here.

Abstract: Embodiments of the invention provide a magnetic film capable of providing a higher saturation magnetic flux density as compared with the conventional one, a process of forming the magnetic film, a thin film magnetic head that makes use of the magnetic film, and a magnetic disk drive having this thin film magnetic head. In one embodiment, a magnetic film contains Co, Ni, and Fe, and its composition is such that 10?Co<20 wt %, 0?Ni?2 wt %, and 80<Fe?90 wt %. This magnetic film is a plating layer formed by electroplating. The face interval variation of crystal surface perpendicular to the layer surface relative to a crystal surface parallel to the layer surface is about 0.4% or more, whereby the saturation magnetic flux density (Bs) is greater than about 2.4 T.

Abstract: A hard magnet may include a seed layer including a first component including at least one of a Pt-group metal, Fe, Mn, Ir, and Co, a cap layer comprising the first component, and a multilayer stack between the seed layer and the cap layer. In some embodiments, the multilayer stack may include a first layer of including the first component and a second component including at least one of a Pt-group metal, Fe, Mn, Ir, and Co, where the second component is different than the first component. The multilayer stack may further include a second layer formed over the first layer and including the second component, and a third layer formed over the second layer and including the first component and the second component.

Abstract: Magnetic tunnel junctions are constructed from a MgO or Mg—ZnO tunnel barrier and amorphous magnetic layers in proximity with, and on respective sides of, the tunnel barrier. The amorphous magnetic layer preferably includes Co and at least one additional element selected to make the layer amorphous, such as boron. Magnetic tunnel junctions formed from the amorphous magnetic layers and the tunnel barrier have tunneling magnetoresistance values of up to 200% or more.

Abstract: A spherical or ellipsoidal iron nitride magnetic powder having a core comprising iron nitride including a Fe16N2 phase as a primary phase and an outer layer containing yttrium (Y) and aluminum (Al), in which an average particle size r of the iron nitride magnetic powder is 20 nm or less, an average diameter d of the core is 4 to 10 nm, and a ratio of r to d (r/d) is 2 to 3, and average content of yttrium and aluminum in the outer layer are from 0.9 to 5 atomic % and from 30 to 50 atomic %, respectively, each based on the total number of iron atoms in the iron nitride magnetic powder, and standard deviations of the contents of yttrium and aluminum are 0.6 atomic % or less and 17 atomic % or less, respectively.

Abstract: To provide a vent piece capable of being attached to and detached from a mold easily. A vent piece body 4 and a connection sleeve 5 are connected to each other to form a cylindrical shape. The vent piece body 4 and the connection sleeve 5 are inserted in an insertion hole 3 penetrating the wall surface of a mold 2 to connect the inside of the mold 2 to the outside thereof. One end portion 9 of the vent piece body 4 is beforehand formed into a countersunk head screw shape. A cone-shaped concave portion 10 is beforehand formed around the inside opening of the insertion hole 3 in the mold 2. The countersunk head screw shaped end portion 9 is fitted in the cone-shaped concave portion 10. Thereby, the movement of a vent piece 1 to the other side is restrained. A nut 8 is threadedly mounted in the other end portion 14 of the connection sleeve 5 from the outside of the mold 2. By mounting and demounting the nut 8, the vent piece 1 can be attached to and detached from the mold 2 easily.

Abstract: The magnetic laminated film includes magnetic films having smooth surfaces. The method of manufacturing the magnetic laminated film comprises the steps of: forming a magnetic film including Fe and Co; smoothening a surface of the magnetic film; forming a discontinuous film, which is composed of a magnetic material or an insulating material and which has a thickness to form a discontinuous film, on the smooth surface of the magnetic film; and repeating the above described steps to laminate a plurality of the magnetic films.

Abstract: ZnMg oxide tunnel barriers are grown which, when sandwiched between ferri- or ferromagnetic layers, form magnetic tunnel junctions exhibiting high tunneling magnetoresistance (TMR). The TMR may be increased by annealing the magnetic tunnel junctions. The zinc-magnesium oxide tunnel barriers may be incorporated into a variety of other devices, such as magnetic tunneling transistors and spin injector devices. The ZnMg oxide tunnel barriers are grown by first depositing a zinc and/or magnesium layer onto an underlying substrate in oxygen-poor (or oxygen-free) conditions, and subsequently depositing zinc and/or magnesium onto this layer in the presence of reactive oxygen.

Abstract: High magnetic moment films FeCo(X, Y), where X is a transition metal element and Y is a rare earth element are formed using off-axis static deposition techniques. The films have tunable magnetic anisotropy from 0 Oe to greater than 500 Oe that are thermally stable beyond nominal photoresist curing temperatures. By using off-axis static deposited FeCo(X, Y) films as seed layers to normally deposited FeCo films, inplane anisotropy and the magnetic moment can be controlled for specific design needs. Epitaxial-like growth (column-to-column matching) from the off-axis static FeCo(X,Y) seed layers to normally deposited FeCo films is attributed to sustained anisotropy in the entire film.

Abstract: The perpendicular magnetic recording medium includes a non-magnetic underlayer composed of Ru or an Ru alloy having a columnar structure in which crystalline particles are isolated from each other by a space, a non-magnetic granular layer provided on the non-magnetic underlayer and composed of crystalline particles and a non-soluble phase and a granular magnetic layer provided on the non-magnetic granular layer and composed of CoCrPt alloy crystalline particles and the non-soluble phase, wherein when a lattice constant in an in-plane direction of the non-magnetic underlayer is a1, the lattice constant in the in-plane direction of the non-magnetic granular layer is a2, and the lattice constant in the in-plane direction of the granular magnetic layer is a3, the relation a1>a2>a3 is satisfied.

Abstract: The magnetic film of a magnetic device can be practically used and can have saturation magnetization greater than 2.45 T. The magnetic film is an alloy film consisting of iron, cobalt and palladium. Molar content of palladium is 1-7%, and the alloy film is formed by a spattering method. Another magnetic film comprises a ferromagnetic film, and a palladium film or an alloy film including palladium, which are alternately layered. Thickness of the palladium film or the alloy film including palladium is 0.05-0.28 nm, and the layered films are formed by a spattering method or a evaporation method.

Abstract: A magnetic head includes: a pole layer; a pole-layer-encasing layer made of a nonmagnetic material and having a top surface and a groove that opens at the top surface; and a nonmagnetic layer that is made of a nonmagnetic metal material, disposed in the groove and forms a pole-layer-encasing section that accommodates the pole layer. A method of manufacturing the magnetic head includes the steps of: forming the pole-layer-encasing layer; forming an initial nonmagnetic layer in the groove of the pole-layer-encasing layer by physical vapor deposition, the initial nonmagnetic layer being intended to become the nonmagnetic layer later by undergoing etching of a surface thereof, etching the surface of the initial nonmagnetic layer by dry etching so that the initial nonmagnetic layer becomes the nonmagnetic layer; and forming the pole layer in the pole-layer-encasing section formed by the nonmagnetic layer.

Abstract: A magnetic recording element includes a multilayer having a surface and a pair of electrodes. The multilayer has a first magnetic fixed layer whose magnetization is substantially fixed in a first direction substantially perpendicular to the surface. The multilayer also has a second magnetic fixed layer whose magnetization is substantially fixed in a second direction opposite to the first direction substantially perpendicular to the surface. A third magnetic layer is provided between the first and second magnetic layers. The direction of magnetization of the third ferromagnetic layer is variable. A first intermediate layer is provided between the first and the third magnetic layers. A second intermediate layer is provided between the second and the third magnetic layers. The pair of electrodes is capable of supplying an electric current flowing in a direction substantially perpendicular to the surface to the multilayer.

Abstract: At least one of lower and upper magnetic cores is composed of magnetic films each of which contains two or more elements of Co, Ni, and Fe, which are formed by electroplating in a plating bath with pH 2 or less, and which have a saturation magnetic flux density of 23,000 gauss or more.

Abstract: The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.

Abstract: In the magnetic film, projection of a magnetic pole, which is caused when a magnetic head is heated, can be restrained. The magnetic film can be applied to a magnetic head of a hard disk drive unit capable of recording data with high recording density. The magnetic film comprises: a first alloy film made of an alloy of iron (Fe) and platinum (Pt), or an alloy of iron (Fe), platinum (Pt) and other metal or metals; and a second alloy film directly layered on the first alloy film, the second alloy film made of an alloy of at least two metals selected from a group including iron (Fe), nickel (Ni) and cobalt (Co). Molar content of iron (Fe) in the first alloy film is 63-74 %.

Abstract: A magnetic film capable of generating strong magnetic fields even in a high frequency region, a manufacturing method therefore and a thin film magnetic head capable of recording even in a high frequency region are provided. In one embodiment, the magnetic film is manufactured by using a 88FeNi film of 200 nm thick having minimum Hk of 0.32 Oe (25.6 A/m) as a main magnetic film and selecting a 20 wt % FeNi film of a similar FeNi alloy plating film having low Hk and low Hc as an interlayer material. A stacked film comprising (88FeNi/20FeNi)×10 layers is prepared so that the total thickness of the main magnetic film is 2 ?m. The 88FeNi film is prepared by application of a DC current in a 88FeNi plating bath, and the 20FeNi film is prepared by pulse plating successively in the same bath.

Abstract: According to one embodiment, a perpendicular magnetic recording medium includes a substrate, and a first magnetic layer and a second magnetic layer formed on the substrate, in which supposing that, for the first and second magnetic layers, respectively, uniaxial magnetic anisotropy constants are Ku1 and Ku2, saturation magnetizations are Ms1 and Ms2, anisotropic magnetic fields are Hk1 and Hk2 and the thicknesses are t1 and t2, then following conditions are satisfied that Ku1 and Ku2 are 3×106 erg/cc or more, Ms1 is smaller than Ms2, Hk1 is larger than Hk2 and t1 is larger than t2.

Abstract: In the magnetic film, projection of a magnetic pole, which is caused when a magnetic head is heated, can be restrained. The magnetic film can be applied to a magnetic head of a hard disk drive unit capable of recording data with high recording density. The magnetic film comprises: a first alloy film made of an alloy of iron (Fe) and platinum (Pt), or an alloy of iron (Fe), platinum (Pt) and other metal or metals; and a second alloy film directly layered on the first alloy film, the second alloy film made of an alloy of at least two metals selected from a group including iron (Fe), nickel (Ni) and cobalt (Co). Molar content of iron (Fe) in the first alloy film is 63-74%.

Abstract: A magnetic device includes a first magnetic layer having at least one magnetic material layer, a second magnetic layer having at least one magnetic material layer, a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, a third magnetic layer including a ferromagnetic material with a fixed magnetization direction, and a pair of electrodes. The pair of electrodes are operable to pass a current through a laminated body including the first and second magnetic layers, the nonmagnetic layer, and the third magnetic layer.

Abstract: A damper for a data storage device having a viscoelastic material and a constraint material disposed on the viscoelastic material, the constraint material covers the sides of the viscoelastic material to reduce exposure of the viscoelastic material from debris in the surrounding environment.

Abstract: An epitaxial Ni3FeN film with unique magnetic properties such as single magnetic domain (even in a large scale 0.5?×0.5?), which rotates coherently in response to the desired switching field with a very sharp transition is described. The magnetic hysteresis loop of this new magnetic nitride is close to the perfect ideal square with the same value of saturation magnetization, remnant magnetization, and magnetization right before switching (domain reversal). The switching field is tunable which make this material more attractive for magneto-resistive devices such as MRAM's, read heads and magnetic sensors.

Abstract: A method for forming a protective bilayer on a substrate that is a magnetic read/write head or a magnetic recording medium. The bilayer is formed as an adhesion enhancing and corrosion resistant underlayer and a protective diamond-like carbon (DLC) overlayer. The underlayer is formed of silicon oxynitride, having the general formula SiOxNy, where x can be within the range between 0.02 and 2.0 and y is in the range between approximately 0.01 and 1.5. By adjusting the values of x and y the underlayer contributes to such qualities as strong chemical bonding between the substrate and the DLC, wear and corrosion resistance, chemical and mechanical stability and low electrical conductivity. The underlayer may be formed by various methods such as reactive ion sputtering, plasma assisted chemical vapor deposition, reactive pulsed laser deposition, plasma surface treatment and plasma immersion ion implantation.

Abstract: A magnetic recording medium is provided which is capable of higher recording density and has a higher coercive force and a lower noise. A production method of the magnetic recording medium, and a magnetic recording and reproducing apparatus are also provided. The magnetic recording medium comprises at least a nonmagnetic undercoat layer, a nonmagnetic intermediate layer, a magnetic layer, and a protective layer, which are laminated in this order on a nonmagnetic substrate, and at least one of the layers of the nonmagnetic undercoat layer is made of a WV alloy or a MoV alloy.

Abstract: ZnMg oxide tunnel barriers are grown which, when sandwiched between ferri- or ferromagnetic layers, form magnetic tunnel junctions exhibiting high tunneling magnetoresistance (TMR). The TMR may be increased by annealing the magnetic tunnel junctions. The zinc-magnesium oxide tunnel barriers may be incorporated into a variety of other devices, such as magnetic tunneling transistors and spin injector devices. The ZnMg oxide tunnel barriers are grown by first depositing a zinc and/or magnesium layer onto an underlying substrate in oxygen-poor (or oxygen-free) conditions, and subsequently depositing zinc and/or magnesium onto this layer in the presence of reactive oxygen.