Substrate Composition Patents (Class 428/813)
  • Patent number: 10677090
    Abstract: An annular rotatable component for a machine includes a first element formed of a composite material, is ring-shaped, and is formed of one or more first ring segments. The first element includes a first interface surface. A second element is formed of a metallic material, is ring-shaped, and is formed of one or more second ring segments. The second element includes a second interface surface complementary to the first interface surface. The annular rotatable component also includes an interface comprising an interface material disposed between the first interface surface and the second interface surface. The interface material, the first element and the second element are co-bonded together to form a unitary structure of the annular rotatable component.
    Type: Grant
    Filed: May 10, 2017
    Date of Patent: June 9, 2020
    Assignee: General Electric Company
    Inventors: Viswanadha Gupta Sakala, Wendy Wenling Lin, Raghuveer Chinta
  • Publication number: 20150079424
    Abstract: A substrate for suspension comprises a metallic substrate, an insulating layer formed on the metallic substrate, a conductor layer formed on the insulating layer, and a cover layer covering the conductor layer. The insulating layer and the cover layer are formed from different materials, whose coefficients of hygroscopic expansion are in the range between 3×10?6/% RH and 30×10?6/% RH. The difference between the coefficients of hygroscopic expansion of the two materials is 5×10?6/% RH or less.
    Type: Application
    Filed: November 24, 2014
    Publication date: March 19, 2015
    Inventors: Yoichi HITOMI, Shinji KUMON, Terutoshi MOMOSE, Katsuya SAKAYORI, Kiyohiro TAKACHI, Yoichi MIURA, Tsuyoshi YAMAZAKI
  • Publication number: 20140168816
    Abstract: Various methods for attaching a crystalline write pole onto an amorphous substrate and the resulting structures are described in detail herein. Further, the resulting structure may have a magnetic moment exceeding 2.4 Tesla. Still further, methods for depositing an epitaxial crystalline write pole on a crystalline seed or template material to ensure that the phase of the write pole is consistent with the high moment phase of the template material are also described in detail herein.
    Type: Application
    Filed: December 18, 2012
    Publication date: June 19, 2014
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Mark Anthony Gubbins, Marcus Benedict Mooney
  • Publication number: 20140063647
    Abstract: In one embodiment, a magnetic head includes a sensor stack of thin films including a free layer; a hard bias structure comprising a first foundation layer, a second foundation layer formed on the first foundation layer and a hard bias layer formed above the second foundation layer, wherein portions of the first and second foundation layers positioned along a side wall of the sensor stack have a discrete island structure. Additional embodiments are also disclosed.
    Type: Application
    Filed: September 6, 2012
    Publication date: March 6, 2014
    Applicant: HGST NETHERLANDS B.V
    Inventors: Norihiro Okawa, Koji Sakamoto, Koji Okazaki
  • Publication number: 20140004384
    Abstract: A device that includes a near field transducer (NFT); at least one cladding layer adjacent the NFT; and a discontinuous metal layer positioned between the NFT and the at least one cladding layer.
    Type: Application
    Filed: June 29, 2012
    Publication date: January 2, 2014
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Tong Zhao, Michael Christopher Kautzky, Michael Allen Seigler, Yongjun Zhao, Jay Jayashankar, Xiaoyue Huang
  • Patent number: 8526137
    Abstract: A magnetic head produced at low ambient temperatures that comprise a crystalline alumina layer for increasing the durability of the head is provided. According to one embodiment, a magnetic head for at least one of reading and writing data on to a magnetic data storage media. The magnetic head comprises a substrate, an at least partially crystalline alumina layer formed on the substrate, at least one of a write transducer and a read transducer formed on the substrate, and a surface for engaging the magnetic data storage media. In another embodiment, a method for forming an at least partially crystalline alumina film. The method comprises providing a substrate, and depositing alumina onto the substrate at an ambient temperature to form the at least partially crystalline alumina film.
    Type: Grant
    Filed: April 16, 2010
    Date of Patent: September 3, 2013
    Assignee: International Business Machines Corporation
    Inventors: Robert G. Biskeborn, Cherngye Hwang, Calvin S. Lo, Andrew C. Ting
  • Patent number: 8318330
    Abstract: A substrate for a magnetic read/write head is disclosed. The substrate can reduce detachment of crystal grains when the substrate is machined. The substrate may be machined when the substrate is cut into strips or a flow path surface recess is formed to produce the magnetic read/write head. The reduced detachment of crystal grains makes the magnetic read/write head more resilient to chipping, which allows the magnetic read/write head to have a lower and more stable flying height that increases recording density.
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: November 27, 2012
    Assignee: Kyocera Corporation
    Inventors: Yucong Wang, Shuji Nakazawa, Yuuya Nakao, Takuya Gentsu, Nobuyuki Horiuchi
  • Patent number: 8173281
    Abstract: A ceramic sintered body contains Al2O3 crystal grains, internal TiC crystal grains existing in the Al2O3 crystal grains and external TiC crystal grains other than the internal TiC crystal grains. The Al2O3 crystal grains and the external TiC crystal grains retain stress caused by the difference in thermal expansion coefficient remaining after sintering, so that the Al2O3 crystal grains and the external TiC crystal grains pull each other in the interface therebetween. As a result, when the ceramic sintered body is machined, micro-cracks generated in the interface can easily grow due to the residual stress in addition to the shearing force caused by the machining operation, so that machinability is improved.
    Type: Grant
    Filed: November 7, 2007
    Date of Patent: May 8, 2012
    Assignee: Kyocera Corporation
    Inventors: Shuji Nakazawa, Yucong Wang, Masahide Akiyama, Takuya Gentsu, Toshiyuki Sue
  • Patent number: 8173563
    Abstract: An object is to provide a sintered body causing less chipping and having a sufficiently higher polishing rate than a conventional AlTiC sintered body, and providing a sufficiently smooth air bearing surface. The sintered body according to the present invention consists of Al2O3, a compound represented by the chemical formula (1) below, and a composite oxide containing Al and Ti, TiCxOy??(1) wherein x+y?1, x>0 and y>0.
    Type: Grant
    Filed: November 24, 2009
    Date of Patent: May 8, 2012
    Assignee: TDK Corporation
    Inventors: Kei Sugiura, Takeshi Urano, Hiroyuki Ono
  • Patent number: 8163830
    Abstract: A composition includes a bismaleimide triazine (BT) compound with a nanoclay composited therewith. A mounting substrate includes polymer compound with a nanoclay composited therewith to form a core for the mounting substrate. A process includes melt blending a polymer such as BT with a nanoclay and forming a core. A process includes dissolving a monomer such as BT with a nanoclay and forming a core. A system includes a nanoclay dispersed in a polymer matrix and a microelectronic device mounted on the mounting substrate that includes the nanoclay dispersed in the polymer matrix.
    Type: Grant
    Filed: March 31, 2006
    Date of Patent: April 24, 2012
    Assignee: Intel Corporation
    Inventors: Praveen Bhimaraj, Omar Bchir
  • Patent number: 8110516
    Abstract: An object is to provide a sintered body having a sufficiently higher polishing rate than a conventional AlTiC sintered body and providing a sufficiently smooth air bearing surface. The sintered body according to the present invention consists of Al2O3 and a compound represented by the chemical formula (1) below: TiCxOy??(1) wherein x+y?1, x>0 and 0.3<y?0.6.
    Type: Grant
    Filed: November 23, 2009
    Date of Patent: February 7, 2012
    Assignee: TDK Corporation
    Inventors: Kei Sugiura, Atsushi Hitomi, Hiroyuki Ono
  • Publication number: 20110256423
    Abstract: A magnetic head produced at low ambient temperatures that comprise a crystalline alumina layer for increasing the durability of the head is provided. According to one embodiment, a magnetic head for at least one of reading and writing data on to a magnetic data storage media. The magnetic head comprises a substrate, an at least partially crystalline alumina layer formed on the substrate, at least one of a write transducer and a read transducer formed on the substrate, and a surface for engaging the magnetic data storage media. In another embodiment, a method for forming an at least partially crystalline alumina film. The method comprises providing a substrate, and depositing alumina onto the substrate at an ambient temperature to form the at least partially crystalline alumina film.
    Type: Application
    Filed: April 16, 2010
    Publication date: October 20, 2011
    Applicant: International Business Machines Corporation
    Inventors: Robert G. Biskeborn, Cherngye Hwang, Calvin S. Lo, Andrew C. Ting
  • Patent number: 7910181
    Abstract: Various embodiments of the present invention are directed to methods for manufacturing complex, anisotropic materials with desirable properties for information storage, processing, and display. Certain of these methods involve employing a magnetic field during manufacture to induce desired orientations of precursors, subunits, and/or molecular subassemblies. The applied magnetic field steers the precursors, subunits, and/or molecular subassemblies into desirable orientations while the precursors, subunits, and/or molecular subassemblies are assembled or self-assemble into a complex, anisotropic material. One embodiment of the present invention is a class of new, complex, well-ordered, network-like materials that include a ferromagnetic-material-based framework in which organic and/or organometallic compounds are organized.
    Type: Grant
    Filed: June 19, 2008
    Date of Patent: March 22, 2011
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Patricia A. Beck, Sean Zhang
  • Publication number: 20100330395
    Abstract: A hard bias (HB) structure for producing longitudinal bias to stabilize a free layer in an adjacent spin valve is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)X laminated layer. The (Co/Ni)X HB layer deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent process steps. After initialization, magnetization direction in the HB layer is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.
    Type: Application
    Filed: June 24, 2009
    Publication date: December 30, 2010
    Inventors: Kunliang Zhang, Min Li, Yuchen Zhou, Min Zheng
  • Publication number: 20100315743
    Abstract: A substrate for a magnetic read/write head is disclosed. The substrate can reduce detachment of crystal grains when unexpected vibrations or impacts are applied. The substrate may be machined when the substrate is cut into strips or a flow path surface recess is formed to produce the magnetic read/write head. The reduced detachment of crystal grains makes the magnetic read/write head more resilient to chipping, which allows the magnetic read/write head to have good performance in read/write.
    Type: Application
    Filed: April 29, 2010
    Publication date: December 16, 2010
    Applicant: KYOCERA Corporation
    Inventors: Yucong WANG, Shuji Nakazawa, Takuya Gentsu
  • Publication number: 20100143749
    Abstract: Disclosed is a substrate material for an AlTiC-based magnetic head, which is excellent in ultra-low flying-related properties as a material for a magnetic head, such as a TPC or AAB type for use as a thin-film magnetic head slider for HDD devices and a thin-film magnetic head for tape recording devices, where a flying height between a magnetic head element and a recording medium is extremely reduced, and usable in perpendicular recording heads, HAMR heads or the like. The magnetic head substrate material consists of a sintered body which contains 10 to 50 mass % of TiCxOyNz (wherein: 0.70?x<1.0; 0<y?0.30; 0?z?0.1; and 0.70<x+y+z?1.0) having an NaCl-type crystal structure, with the remainder being ?-Al2O3, wherein compounds of Fe, Cr and Co are contained in an amount of no more than 0.02 mass % in total.
    Type: Application
    Filed: March 30, 2007
    Publication date: June 10, 2010
    Applicants: NIPPON TUNGSTEN CO., LTD., HITACHI METALS, LTD.
    Inventors: Shigeki Mori, Yusuke Hara, Shinzo Mitomi, Hidetaka Sakumichi
  • Publication number: 20100091404
    Abstract: A substrate for a magnetic read/write head is disclosed. The substrate can reduce detachment of crystal grains when the substrate is machined. The substrate may be machined when the substrate is cut into strips or a flow path surface recess is formed to produce the magnetic read/write head. The reduced detachment of crystal grains makes the magnetic read/write head more resilient to chipping, which allows the magnetic read/write head to have a lower and more stable flying height that increases recording density.
    Type: Application
    Filed: December 18, 2009
    Publication date: April 15, 2010
    Applicant: KYOCERA CORPORATION
    Inventors: Yucong WANG, Shuji Nakazawa, Yuuya Nakao, Takuya Gentsu, Nobuyuki Horiuchi
  • Publication number: 20100061013
    Abstract: Greater emphasis has been placed on smoothness of the floating surface for the applications with floating height of 10 nm or less. To obtain a smooth floating surface, it must be polished with diamond abrasive having a mean particle size of 0.1 ?m or less, and conventional ceramic sintered body has poor machinability and it is impossible to use the magnetic heads made of this ceramic sintered body at a floating height of 10 nm or less. The ceramic sintered body according to the present invention contains Al2O3 crystal grains, internal TiC crystal grains existing in the Al2O3 crystal grains and external TiC crystal grains other than the internal TiC crystal grains. The Al2O3 crystal grains and the external TiC crystal grains retain stress caused by the difference in thermal expansion coefficient remaining after sintering, so that the Al2O3 crystal grains and the external TiC crystal grains pull each other in the interface therebetween.
    Type: Application
    Filed: November 7, 2007
    Publication date: March 11, 2010
    Applicant: KYOCERA CORPORATION
    Inventors: Shuji Nakazawa, Yucong Wang, Masahide Akiyama, Takuya Gentsu, Toshiyuki Sue
  • Patent number: 7606010
    Abstract: ZnMg oxide tunnel barriers are grown which, when sandwiched between ferri- or ferromagnetic layers, form magnetic tunnel junctions exhibiting high tunneling magnetoresistance (TMR). The TMR may be increased by annealing the magnetic tunnel junctions. The zinc-magnesium oxide tunnel barriers may be incorporated into a variety of other devices, such as magnetic tunneling transistors and spin injector devices. The ZnMg oxide tunnel barriers are grown by first depositing a zinc and/or magnesium layer onto an underlying substrate in oxygen-poor (or oxygen-free) conditions, and subsequently depositing zinc and/or magnesium onto this layer in the presence of reactive oxygen.
    Type: Grant
    Filed: July 12, 2007
    Date of Patent: October 20, 2009
    Assignee: International Business Machines Corporation
    Inventor: Stuart Stephen Papworth Parkin
  • Patent number: 7446978
    Abstract: The magnetic head slider material of the present invention is constituted by a sintered body containing 100 parts by weight of alumina, 20 to 120 parts by weight of titanium carbide, and 0.2 to 9 parts by weight of carbon.
    Type: Grant
    Filed: May 17, 2005
    Date of Patent: November 4, 2008
    Assignee: TDK Corporation
    Inventors: Yukio Kawaguchi, Kei Sugiura, Masahiro Itoh, Minoru Sakurabayashi, Atsushi Hitomi
  • Patent number: 7414002
    Abstract: The present invention provides an aluminum oxide-titanium nitride sintered body having good resistance to electrostatic damage and small variation in volume resistivity. The aluminum oxide-titanium nitride sintered body is mainly composed of 65 to 85% by weight of aluminum oxide and titanium nitride constituting the rest. The average of the sum of the crystal grain sizes of the aluminum oxide and the titanium nitride is 0.4 to 2.0 ?m. The aluminum oxide has a mean crystal grain size of 0.5 to 2.2 ?m and the titanium nitride has a mean crystal grain size of 0.2 to 1.6 ?m.
    Type: Grant
    Filed: November 29, 2005
    Date of Patent: August 19, 2008
    Assignee: Kyocera Corporation
    Inventors: Minoru Nakasuga, Kazuhide Kusano
  • Patent number: 7381670
    Abstract: A material for a magnetic head slider according to the present invention is a magnetic head slider material comprised of a sintered body containing alumina and titanium carbide, in which an area percentage of an area of alumina crystal grains and titanium carbide crystal grains having a crystal grain size of not less than 200 nm nor more than 350 nm to an area of alumina crystal grains and titanium carbide crystal grains in a cut surface of the sintered body is not less than 80%.
    Type: Grant
    Filed: May 8, 2006
    Date of Patent: June 3, 2008
    Assignee: TDK Corporation
    Inventors: Kei Sugiura, Yukio Kawaguchi, Atsushi Hitomi
  • Publication number: 20080070064
    Abstract: A method for manufacturing a magnetic film includes preparing a foundation layer containing a noble metal element and a base metal element, and depositing a plated layer of a magnetic material on the foundation layer by pulse plating.
    Type: Application
    Filed: June 19, 2007
    Publication date: March 20, 2008
    Applicant: TDK CORPORATION
    Inventors: Kei Hirata, Atsushi Yamaguchi, Shingo Miyata
  • Patent number: 7300711
    Abstract: Magnetic material, which is not normally bcc-structured under ambient conditions, is induced into becoming bcc as a result of its proximity to a suitable templating material, such as a bcc-structured underlayer that is in contact with the magnetic material. The magnetic material, in combination with a tunnel barrier and other elements, forms a magnetic tunneling device, such as a magnetic tunnel junction that may have a tunneling magnetoresistance of 100% or more. Suitable tunnel barriers include MgO and Mg—ZnO, and the magnetic material may be Co. The templating material may include such elements as V, Cr, Nb, Mo, and W, or the tunnel barrier MgO may itself serve as the templating material.
    Type: Grant
    Filed: October 29, 2004
    Date of Patent: November 27, 2007
    Assignee: International Business Machines Corporation
    Inventor: Stuart Stephen P. Parkin
  • Patent number: 7294418
    Abstract: The magnetic film includes an FeCo layer, restrains erasing data by a magnetic field leaked from a magnetic pole, has high saturation magnetic flux density and soft magnetism and writes data with high recording density. The magnetic film for a magnetic head of the present invention comprises: a nonmagnetic layer including at least one selected from a group of Ru, Rh, Ir, Cr, Cu, Au, Ag, Pt and Pd; a magnetic layer including Fe and Co. Anisotropy magnetic field is 0.8 kA/m or more.
    Type: Grant
    Filed: February 25, 2004
    Date of Patent: November 13, 2007
    Assignee: Fujitsu Limited
    Inventors: Shoji Ikeda, Takayuki Kubomiya, Masaaki Matsuoka
  • Patent number: 7220498
    Abstract: By varying only the thickness of a known material having superior magnetic characteristics to increase spin polarization without changing the chemical composition, a tunnel magnetoresistive element capable of producing a larger magnetoresistive effect is provided. The tunnel magnetoresistive element includes an underlayer (nonmagnetic or antiferromagnetic metal film); an ultrathin ferromagnetic layer disposed on the underlayer; an insulating layer disposed on the ultrathin ferromagnetic layer; and a ferromagnetic electrode disposed on the insulating layer.
    Type: Grant
    Filed: May 24, 2002
    Date of Patent: May 22, 2007
    Assignees: National Institute of Advanced Industrial Science and Technology, Japan Science and Technology Agency
    Inventors: Taro Nagahama, Shinji Yuasa, Yoshishige Suzuki
  • Patent number: 7094480
    Abstract: The invention relates to magnetic field sensors in which magnetoresistance is used as the physical phenomenon for detecting and measuring the magnetic field. It consists in producing a stack comprising a first ferromagnetic layer (101), an insulating layer (103), a second ferromagnetic layer (102) and an antiferromagnetic layer (104). The two ferromagnetic layers exhibit crossed magnetic anisotropies and form with the insulating layer a tunnel junction. The anisotropy of the first layer is obtained from the shape energy of the substrate on which this first layer rests and which is slightly misoriented with respect thereto. The anisotropy of the second layer is obtained by the action of the antiferromagnetic layer.
    Type: Grant
    Filed: April 27, 2001
    Date of Patent: August 22, 2006
    Assignee: Thales
    Inventors: Frederic Nguyen Van Dau, Henri Jaffres, Daniel Lacour
  • Patent number: 7045224
    Abstract: The present invention provides a magnetic detecting element including a pinned magnetic layer and a first antiferromagnetic layer which constitutes an exchange coupling film and the structures of which are optimized for properly pinning magnetization of the pinned magnetic layer, improving reproduction output and properly complying with a narrower gap, and a method of manufacturing the magnetic detecting element. The pinned magnetic layer has a synthetic ferrimagnetic structure, and the first antiferromagnetic layer has a predetermined space C formed at the center in the track width direction to produce exchange coupling magnetic fields only between the first antiferromagnetic layer and both side portions of a first magnetic layer of the pinned magnetic layer. Therefore, the magnetization of the pinned magnetic layer can be pinned, and an improvement in reproduction output and gap narrowing can be realized.
    Type: Grant
    Filed: September 30, 2003
    Date of Patent: May 16, 2006
    Assignee: Alps Electric Co., Ltd.
    Inventors: Naoya Hasegawa, Eiji Umetsu, Masamichi Saito, Yosuke Ide
  • Patent number: 7029771
    Abstract: An intermediate region is formed at a central portion of an element in a track width direction, and an antiferromagnetic layer is not provided at the intermediate region. Accordingly, a sense current can be prevented from being shunted to the intermediate region, and as a result, improvement in reproduction output and strength against magnetic electrostatic damage can be realized. In addition, since the thickness of the central portion of the element is decreased, trend toward narrower gap can be realized. Furthermore, since the direction of magnetization of a free magnetic layer is oriented in the track width direction by shape anisotropy, means for orienting the magnetization is not necessary, and hence the structure and manufacturing method of the element can be simplified.
    Type: Grant
    Filed: September 26, 2003
    Date of Patent: April 18, 2006
    Assignee: Alps Electric Co., Ltd.
    Inventors: Naoya Hasegawa, Eiji Umetsu, Masamichi Saito, Yosuke Ide
  • Patent number: 6967055
    Abstract: In a thin-film magnetic head having a multilayered film developing a magnetoresistive effect, which is present between an upper shielding layer and a lower shielding layer both formed above an AlTiC substrate, a recess for defining the lower shielding layer is formed in an underlayer present on a surface of the AlTiC substrate, and a lower shielding layer made of NiFe is provided in the recess. A SiO2 film is interposed between the underlayer and the lower shielding layer.
    Type: Grant
    Filed: April 15, 2003
    Date of Patent: November 22, 2005
    Assignee: Alps Electric Co., Ltd.
    Inventor: Kiyoshi Sato