Utilizing High Temperature, E.g., By Fusing, Etc. Patents (Class 430/136)
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Publication number: 20150024309Abstract: A support material for printing a support structure with an electrophotography-based additive manufacturing system, the support material including a composition having a charge control agent and a thermoplastic copolymer having aromatic groups, (meth)acrylate-based ester groups, carboxylic acid groups, and anhydride groups, with a high anhydride conversion. The composition is provided in a powder form having a controlled particle size, and the support material is configured for use in the electrophotography-based additive manufacturing system having a layer transfusion assembly for printing the support structure in a layer-by-layer manner, and is at least partially soluble in an aqueous solution.Type: ApplicationFiled: July 17, 2013Publication date: January 22, 2015Inventor: Trevor I. Martin
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Patent number: 7629103Abstract: A photoconductor comprising a photosensitive layer disposed on an support, wherein the photosensitive layer has at least a crosslinked layer and the crosslinked layer is produced by curing at least a radical polymerizable monomer having three or more functionalities and no charge transport structure and a radical polymerizable compound having a charge transport structure through irradiating a light energy in an atmosphere having a low oxygen concentration of 0.001 vol % to 2.0 vol %.Type: GrantFiled: June 21, 2005Date of Patent: December 8, 2009Assignee: Ricoh Company, Ltd.Inventors: Hiroshi Ikuno, Hiroshi Tamura, Tetsuro Suzuki, Yoshiki Yanagawa
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Publication number: 20080096118Abstract: A polyester resin has a molecular weight distribution (MWD) of approximately from 1.0 to 2.2, wherein molecular weight distribution (MWD) is a weight-averaged molecular weight (Mw)/a number-averaged molecular weight (Mn); and a luminosity (L*) of from approximately 97.0 to 100 when the polyester resin is molded in a diameter of 5 cm and a thickness of 2 mm.Type: ApplicationFiled: May 9, 2007Publication date: April 24, 2008Applicant: FUJI XEROX CO., LTD.Inventors: Fumiaki Mera, Tetsuo Ohta
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Patent number: 7214458Abstract: A toner that contains resin, colorant, wax and an aromatic hydrocarbon compatibilizer.Type: GrantFiled: August 28, 2003Date of Patent: May 8, 2007Assignee: Xerox CorporationInventors: Mark E. Mang, Hui Chang, D. Paul Casalmir
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Patent number: 6582943Abstract: The present invention relates to a method for producing 2-hydroxyisobutyric acid where acetone cyanohydrin is converted to 2-hydroxyisobutyric acid using an enzyme catalyst having nitrilase activity, or having a combination of nitrile hydratase and amidase activities. The invention also encompasses production of methacrylic acid wherein the 2-hydroxyisobutyric acid produced with the catalyst described is dehydrated to produce methacrylic acid.Type: GrantFiled: February 5, 2002Date of Patent: June 24, 2003Assignee: E. I. du Pont de Nemours and CompanyInventors: Sarita Chauhan, Robert DiCosimo, Robert Fallon, John Gavagan, Leo Ernest Manzer, Mark S. Payne
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Patent number: 6458501Abstract: The latex of an emulsion aggregation toner is prepared without the use of a surfactant. The process comprises preparing an emulsion of monomers in water without a surfactant; adding a free radical initiator to at least a portion of the emulsion to initiate seed polymerization to form seed polymer, wherein the free radical initiator attaches to the seed polymer to form ionic, hydrophilic end groups on the seed polymer; and adding additional monomer to the composition to complete polymerization to form a latex polymer.Type: GrantFiled: September 30, 1999Date of Patent: October 1, 2002Assignee: Xerox CorporationInventors: Chieh-Min Cheng, Grazyna E. Kmiecik-Lawrynowicz, Allan K. Chen
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Patent number: 6221552Abstract: A method for permanently marking a photoreceptor surface includes the steps of irradiating a surface of a photoreceptor with an irradiation source to permanently mark the photoreceptor, and ablating material from the photoreceptor to at least one controlled depth in the photoreceptor with the irradiation source.Type: GrantFiled: January 19, 2000Date of Patent: April 24, 2001Assignee: Xerox CorporationInventors: Terry L Street, Edward F Grabowski
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Patent number: 5691096Abstract: A toner particularly suited for flash fusing comprising a resin binder which is a bisphenol-A polyester containing an aliphatic diacid and sometimes also containing a hydroxyarenecarboxylic acid.Type: GrantFiled: April 4, 1989Date of Patent: November 25, 1997Assignee: Lexmark International, Inc.Inventors: Brian William Baird, Art Fred Diaz, William Harve Dickstein, Charles Mark Seymour
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Patent number: 5597675Abstract: A phthalocyanine pigment dispersion using a dispersing polymer having pendant quaternary ammonium salt groups to form a highly dispersed and stable millbase is described. The pigment dispersion is compatible with poly(vinylbutyral) resins and stable in ketone solvents. The pigment dispersion is particularly useful as a charge-generating or charge-transport material in an organic photoconductor construction.Type: GrantFiled: April 18, 1996Date of Patent: January 28, 1997Assignee: Imation Corp.Inventors: Ravindra L. Arudi, John C. Haidos
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Patent number: 5418106Abstract: A method of restoring a used organic photoreceptor which includes a supporting substrate having a photoconductor layer contained on said substrate and an overlaying layer of charge transport material. The photoreceptor is heated to a temperature near or above the glass transition temperature of the charge transport layer for a time sufficient to allow for flowing and/or melting of the top surface of the charge transport layer, and then cooled to room temperature, followed by applying a new layer of charge transport material over the existing charge transport layer.Type: GrantFiled: July 1, 1993Date of Patent: May 23, 1995Assignee: Nu-Kote International, Inc.Inventors: Donald E. Snyder, Jr., William A. Donofrio, William J. Murphy
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Patent number: 5376491Abstract: An organic photoconductor including a base layer formed of a first material and a photoconductive layer formed of a second material. The organic photoconductor being characterized in that when it is maintained in a curved orientation with the photoconductive layer facing outward, the photoconductive layer is subjected to less stress than the base layer. In one embodiment the first material is relatively more flexible and stretchable than said second material and the materials are pre-stressed in opposite senses. In a second embodiment the first material is relatively flexible and stretchable and the second material is an initially less flexible and stretchable material which has been chemically treated to increase its stretchability and flexibility.Type: GrantFiled: January 5, 1993Date of Patent: December 27, 1994Assignee: Indigo N.V.Inventors: Yakov Krumberg, Jakob Karin, Ehud Chatow
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Patent number: 5225307Abstract: A process for the preparation of photogenerating pigments which comprises the sublimation of a pelletized crude photogenerating pigment at a temperature of from about 250.degree. to about 500.degree. C.; depositing the sublimate onto a substrate; subsequently increasing the sublimation temperature by from about 10.degree. to about 100.degree. C. above the first sublimation temperature, and depositing the resulting sublimate onto a substrate.Type: GrantFiled: January 31, 1992Date of Patent: July 6, 1993Assignee: Xerox CorporationInventors: Ah-Mee Hor, Rafik O. Loutfy, George Liebermann, Donald J. Teney
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Patent number: 4912008Abstract: In an electrophotographic photosensitive device, which comprises an electroconductive support, a photoconductive layer provided thereon, and a surface protective layer provided on the photoconductive layer, the surface protective layer being made from a film having a density of localized states of not more than 5.times.10.sup.17 cm.sup.-3 and a higher dark resistance than that of the photoconductive layer, the surface protective layer is less susceptible to deterioration, adhesion to the photoconductive layer is enhanced, and thus the device has a prolonged life.Type: GrantFiled: May 31, 1988Date of Patent: March 27, 1990Assignee: Hitachi, Ltd.Inventors: Megumi Naruse, Kunihiro Tamahashi, Mitsuo Chigasaki, Masanobu Hanazono
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Patent number: 4904559Abstract: A process for the preparation of chalcogenide alloy compositions which comprises providing a chalcogenide alloy; admixing therewith crystalline or amorphous selenium; and subsequently subjecting the resulting mixture to evaporation.Type: GrantFiled: October 24, 1988Date of Patent: February 27, 1990Assignee: Xerox CorporationInventors: Santokh S. Badesha, Paul Cherin, Harvey J. Hewitt
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Patent number: 4894307Abstract: A process for the preparation of chalcogenide alloys which comprises providing a chalcogenide alloy source component, crystallizing the source component, and evaporating the source component in the presence of an organic component.Type: GrantFiled: November 4, 1988Date of Patent: January 16, 1990Assignee: Xerox CorporationInventors: Santokh S. Badesha, Geoffrey M. T. Foley, Paul Cherin
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Patent number: 4818563Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with heat energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.Type: GrantFiled: February 20, 1986Date of Patent: April 4, 1989Assignee: Canon Kabushiki KaishaInventors: Shunichi Ishihara, Shigeru Ohno, Masahiro Kanai, Shunri Oda, Isamu Shimizu
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Patent number: 4784874Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and halogen and an active species (B) formed from a chemical substance for film formation which is chemically mutually reactive with said active species (A) separately from each other, then providing them with heat energy and thereby allowing both the species to react chemically with each other to form a deposited film on the substrate.Type: GrantFiled: February 20, 1986Date of Patent: November 15, 1988Assignee: Canon Kabushiki KaishaInventors: Shunichi Ishihara, Shigeru Ohno, Masahiro Kanai, Shunri Oda, Isamu Shimizu
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Patent number: 4724194Abstract: A photoconductive member is provided, which comprises a support and a light receiving layer provided on said support containing an amorphous material comprising silicon atoms as the matrix, the free surface of said light receiving layer having a contact angle with water of 75.degree. or higher.Type: GrantFiled: December 15, 1986Date of Patent: February 9, 1988Assignee: Canon Kabushiki KaishaInventors: Naoko Shirai, Tatsuo Takeuchi
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Patent number: 4678732Abstract: A photo-semiconductor is produced by melting Bi.sub.2 O.sub.3 or its mixture with a small amount of an oxide or fluoride and then quenching the resultant melt in the form of a film.Type: GrantFiled: September 12, 1985Date of Patent: July 7, 1987Assignees: Agency of Industrial Science & Technology, Ministry of International Trade & IndustryInventors: Tadashi Sekiya, Akihiro Tsuzuki, Yasuyoshi Torii
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Patent number: 4668599Abstract: A process for producing a photoreceptor is disclosed. A gaseous compound of the constituent materials of the photoreceptor is decomposed by glow discharge in the presence of a metal, thereby forming a constituent layer containing atoms and or ions of the metal.Type: GrantFiled: August 12, 1986Date of Patent: May 26, 1987Assignee: Konishiroku Photo Industry Co., Ltd.Inventors: Toshinori Yamazaki, Eiichi Sakai, Hiroyuki Nomori
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Patent number: 4643961Abstract: An infrared responsive cadmium selenide photoconductor is prepared by blending cadmium selenide, copper-containing cadmium selenide mix and cadmium chloride, and then firing the blend at 425.degree. C.Type: GrantFiled: November 22, 1982Date of Patent: February 17, 1987Assignee: GTE Products CorporationInventor: Sixdeniel Faria
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Patent number: 4571060Abstract: An apparatus which seals a housing to prevent the escape of toner particles therefrom. The toner particles are captured and softened to become tacky. Additional toner particles stick to the tacky toner particles preventing their escape. Each successive layer of captured toner particles soften and become tacky capturing other toner particles thereto.Type: GrantFiled: October 22, 1984Date of Patent: February 18, 1986Assignee: Xerox CorporationInventor: Jan Bares
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Patent number: 4552824Abstract: A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.Type: GrantFiled: January 28, 1985Date of Patent: November 12, 1985Assignee: Canon Kabushiki KaishaInventors: Yutaka Hirai, Toshiyuki Komatsu, Katsumi Nakagawa, Teruo Misumi, Tadaji Fukuda
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Patent number: 4540647Abstract: An improved method for the manufacture of a photoconductive insulating element comprising an electrically-conductive support, a barrier layer overlying the support, and a layer of doped hydrogenated amorphous silicon overlying the barrier layer, wherein the doped layer is formed by a process of plasma-induced dissociation of a gaseous mixture of a silane and a doping agent, and the dissociation is a temperature-controlled process in which deposition of a final portion of the doped layer is carried out at a temperature which is less than the temperature used in forming the initial portion of the doped layer. Control of the temperature of the deposition process in this manner provides a substantial increase in the dynamic exposure range of the element.Type: GrantFiled: August 20, 1984Date of Patent: September 10, 1985Assignee: Eastman Kodak CompanyInventor: Paul M. Borsenberger
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Patent number: 4495265Abstract: A CdS:Cu,Cl electrophotographic material suitable for use in the xerographic mode, contains 200 to 300 ppm Cu, 0.02 to 0.06 percent Cl, and has very good contrast voltage.Type: GrantFiled: February 12, 1981Date of Patent: January 22, 1985Assignee: GTE Products CorporationInventor: Sixdeniel Faria
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Patent number: 4482489Abstract: Provided are light-sensitive diazonium compounds known as diazonium trifluoromethane sulfonates, which have the structural formula: ##STR1## wherein D --N.dbd.N-- is the cation of a light-sensitive, aromatic diazonium compound. The diazonium trifluoromethane sulfonates are prepared as the reaction product of trifluoromethyl sulfonic acid, or a salt thereof, and a diazonium compound. Said diazonium trifluoromethane sulfonates find utility in diazography formulation for both positive- and negative-working diazotype photoreproduction systems, and as latent polymerization initiators activatable by irradiation.Type: GrantFiled: November 15, 1982Date of Patent: November 13, 1984Assignee: James River Graphics, Inc.Inventor: Carmine A. DiPippo
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Patent number: 4472492Abstract: A method for fabricating an electrophotographic image forming member, wherein the first photoconductive layer consisting of an amorphous inorganic semiconductive material is formed on a substrate suited for the electrophotographic process, then the second photoconductive layer, which is different from the first photoconductive layer and consists of amorphous silicon containing therein silicon as the matrix and at least one of hydrogen and halogen atoms, is formed on the first photoconductive layer, and thereafter, the second photoconductive layer is annealed by irradiating a laser beam on the surface of the second photoconductive layer.Type: GrantFiled: July 8, 1983Date of Patent: September 18, 1984Assignee: Canon Kabushiki KaishaInventors: Junichiro Kanbe, Tadaji Fukuda, Toru Takahashi
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Patent number: 4471042Abstract: An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.Type: GrantFiled: May 4, 1979Date of Patent: September 11, 1984Assignee: Canon Kabushiki KaishaInventors: Toshiyuki Komatsu, Yutaka Hirai, Katsumi Nakagawa, Tadaji Fukuda
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Amorphous silicon electrophotographic image-forming member having an aluminum oxide coated substrate
Patent number: 4461820Abstract: An electrophotographic image-forming member comprises (1) a substrate for electrophotography which has a surface coating of an aluminum oxide containing water chemi-structurally and (2) a photoconductive layer which is laid on said surface coating of the substrate and constituted of an amorphous material containing at least one of hydrogen atom and halogen atom in a matrix of silicon atom, said photoconductive layer containing at least one of oyxgen atom, nitrogen atom, and carbon atom.Type: GrantFiled: February 1, 1982Date of Patent: July 24, 1984Assignee: Canon Kabushiki KaishaInventors: Shigeru Shirai, Junichiro Kanbe, Tadaji Fukuda -
Patent number: 4460673Abstract: Disclosed are method and apparatus for producing amorphous silicon layers for solar cells or electrophotography by plasma-enhanced chemical vapor deposition (CVD) through glow-discharge decomposition of a reaction gas containing monosilane or a higher order silicon hydride in a reaction chamber. Deposition rate and efficiency of reaction gas usage are improved by the selective removal of hydrogen gas reaction product from the reaction chamber. In one embodiment, a filter which is more permeable to hydrogen gas than to the reaction gas is placed in the vacuum pumping port of the reaction chamber. The filter comprises either a palladium film or a bundle of small diameter tubes made from a polyimide system polymer. In another embodiment of the invention, a porous sintered material containing La-Ni alloy is used to selectively adsorb hydrogen gas in the reaction chamber.Type: GrantFiled: May 27, 1982Date of Patent: July 17, 1984Assignee: Fuji Electric Company, Ltd.Inventors: Kunio Sukigara, Toyoki Kazama
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Patent number: 4451547Abstract: A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.Type: GrantFiled: December 8, 1980Date of Patent: May 29, 1984Assignee: Canon Kabushiki KaishaInventors: Yutaka Hirai, Toshiyuki Komatsu, Katsumi Nakagawa, Teruo Misumi, Tadaji Fukuda
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Patent number: 4438188Abstract: Disclosed are method and apparatus for producing highly uniform films of photosensitive materials (e.g., amorphous silicon) for electrophotography on large diameter cylindrical metal substrates (e.g., aluminum or stainless steel) by plasma chemical vapor deposition (CVD). The cylindrical substrate is rotatably mounted in a reaction chamber and serves as an electrode. A hollow metallic second electrode in the reaction chamber coaxially surrounds the substrate and is spaced apart therefrom. Hydrogen gas is first introduced into the inter-electrode space between the substrate and the second electrodes, and a high-frequency electric field is applied to the two electrodes to generate a glow discharge for plasma cleaning of the substrate surface. The hydrogen gas is then pumped out of the reaction chamber, and a reaction gas of monosilane (SiH.sub.Type: GrantFiled: June 10, 1982Date of Patent: March 20, 1984Assignee: Fuji Electric Company, Ltd.Inventors: Michiro Shimatani, Toyoki Kazama
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Patent number: 4430405Abstract: A xeroradiographic material comprising a substrate at least one surface of which is electrically conductive, and an X-ray sensitive layer provided on the conductive surface of the substrate and essentially consisting of an organic binder, .gamma.-form crystal grains of a bismuth oxide-based compound oxide and n-type semiconductor grains dispersed in the organic binder. The material is made by dispersing these grains in an organic binder solution, applying the dispersion onto the conductive surface of the substrate, drying the coat of the dispersion at a temperature in a range not lower than the boiling point of the solvent but below the softening point of the organic binder to form an X-ray sensitive layer, and heat-treating the X-ray sensitive layer at a temperature in a range not lower than the softening point of the organic binder but below the temperature at which the organic binder begins decomposing.Type: GrantFiled: September 29, 1982Date of Patent: February 7, 1984Assignee: Fuji Photo Film Co., Ltd.Inventors: Yoshihiro Ono, Hiroshi Sunagawa
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Patent number: 4419004Abstract: An electrostatic method of making transparencies and apparatus for practicing said method. An endless electrophotographic belt is charged, imaged and toned with a liquid toner suspension. The belt with the toned image is brought into close proximity to a precisely dimensioned gap defined by a heated roller over which is passed a strip of transfer material comprising a transparent substrate carrying a thin ohmic layer bonded thereto and a thin overcoat of resinous material on the ohmic layer and bonded thereto. An electrical bias is applied across the gap between the belt and the overcoated ohmic layer. The toner particles migrate electrophoretically toward the overcoated substrate. Heat is applied sufficient to melt the overcoating just prior or during the application of the electrical bias so that transfer occurs due to electrophoretic migration through the melt, thus embedding the transferred toner particles of the toner image within the resin. The transfer material is quickly cooled.Type: GrantFiled: November 2, 1981Date of Patent: December 6, 1983Assignee: Coulter Systems CorporationInventor: Manfred R. Kuehnle
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Patent number: 4419005Abstract: An electrostatic method of making transparencies and apparatus for practicing said method. An endless electrophotographic belt is charged, imaged and toned with a liquid toner suspension. The belt with the toned image is brought into close proximity to a precisely dimensioned gap defined by a transfer roller along with a sheet of transfer material comprising a transparent substrate polyester carrying a thin ohmic layer bonded thereto and a thin overcoat of a compatible resinous material on the ohmic layer and bonded thereto. An electrical bias is applied across the gap between the belt and the overcoated ohmic layer. The toner particles migrate electrophoretically toward the transfer sheet. Subsequent to transfer, heat is applied to the transfer sheet sufficient to soften the overcoating embedding the transferred toner particles of the toner image within the resin. The transfer material is cooled.Type: GrantFiled: November 2, 1981Date of Patent: December 6, 1983Assignee: Coulter Systems CorporationInventor: Manfred R. Kuehnle
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Patent number: 4415643Abstract: A process for preparing photoconductive cadmium sulfide comprising steps of forming precipitated cadmium sulfide particles, primarily firing said cadmium sulfide particles, deionizing said cadmium sulfide particles, and secondarily firing said cadmium sulfide particles.Type: GrantFiled: August 27, 1981Date of Patent: November 15, 1983Assignee: Canon Kabushiki KaishaInventors: Koji Goto, Isamu Kajita, Ichiro Nomura, Hirokuni Kawashima
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Patent number: 4378417Abstract: In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.Type: GrantFiled: April 15, 1981Date of Patent: March 29, 1983Assignee: Hitachi, Ltd.Inventors: Eiichi Maruyama, Sachio Ishioka, Yoshinori Imamura, Hirokazu Matsubara, Yasuharu Shimomoto, Shinkichi Horigome, Yoshio Taniguchi
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Patent number: 4377628Abstract: Disclosed is an electrophotographic member having an amorphous-silicon photoconductive layer, wherein the distance between a portion in which light illuminating the photoconductor is absorbed therein until its intensity decreases to 1% of that at incidence and the interface of the photoconductor opposite to the light incidence side thereof is at most 5 .mu.m, whereby the residual potential of the photoconductive layer can be reduced.That part of the photoconductive layer constituting the electrophotographic member which is at least 10 nm thick inwardly of the photoconductive layer from the surface thereof to store charges is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..multidot.cm. Further, within such photoconductive layer, a region of amorphous silicon which has an optical forbidden band gap smaller than that of the amorphous silicon forming the surface part is disposed at a thickness of at least 10 nm.Type: GrantFiled: April 24, 1981Date of Patent: March 22, 1983Assignee: Hitachi, Ltd.Inventors: Sachio Ishioka, Eiichi Maruyama, Yoshinori Imamura, Hirokazu Matsubara, Shinkichi Horigome
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Patent number: 4366222Abstract: Disclosed is a photoconductor of the cadmium sulfide/cadmium carbonate type which contains cadmium oxide in the range of 0.05 to 1.5 mole per cent. The calcination of this photoconductor is performed at the relatively high temperature range of approximately 250 degrees C. to 310 degrees C. in an inert atmosphere or in air, with between 265 degrees C. to 290 degrees C. being preferred. The resultant photoconductor, which can be used in both toner transfer and charge transfer electrophotography, has a higher photographic speed, faster discharge of residual charge, and less degradation of electrophotographic properties, particularly charge acceptance, at high humidities.Type: GrantFiled: October 22, 1981Date of Patent: December 28, 1982Assignee: Varian AssociatesInventor: Morris Feinleib
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Patent number: 4357179Abstract: Layers of controllably dopable amorphous silicon and germanium can be produced by means of low pressure chemical vapor deposition, at a reaction temperature between about 450.degree. C. and about 630.degree. C., for Si, and between about 350.degree. C. and about 400.degree. C. for Ge, in an atmosphere comprising a Si-yielding or Ge-yielding precursor such as SiH.sub.4 or GeI.sub.4, at a pressure between about 0.05 Torr and about 0.7 Torr, preferably between about 0.2 and 0.4 Torr. For undoped Si and P-doped Si, the preferred temperature range is from about 550.degree. C. to about 630.degree. C., for B-doped Si, it is from about 480.degree. C. to about 540.degree. C. The material produced has a density in excess of 0.9 of the corresponding crystalline density, and contains less than 1 atomic percent of hydrogen. An advantageous doping method is addition of dopant-forming precursor, e.g., PH.sub.3 or B.sub.2 H.sub.6, to the atmosphere.Type: GrantFiled: December 23, 1980Date of Patent: November 2, 1982Assignee: Bell Telephone Laboratories, IncorporatedInventors: Arthur C. Adams, David E. Aspnes, Brian G. Bagley
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Method of making .alpha.-silicon powder, and electrophotographic materials incorporating said powder
Patent number: 4356246Abstract: A noncrystalline silicon powder having excellent photoconductivity is described, comprising silicon and hydrogen, exhibiting an infrared absorption spectrum characterized by absorption peaks centered at about 2000 cm.sup.-1 and 630 cm.sup.-1, wherein the height of the absorbance peak at 2000 cm.sup.-1 is at least one-tenth the height of the peak centered at 630 cm.sup.-1, and exhibiting a spin density of not more than 10.sup.18 cm.sup.-3 determined by electron spin resonance spectroscopy; the noncrystalline silicon powder is used as highly efficient photoconductor in photoconductive compositions utilized for the production of electrophotographic photoreceptors.Type: GrantFiled: June 16, 1980Date of Patent: October 26, 1982Assignee: Fuji Photo Film Co., Ltd.Inventors: Masatoshi Tabei, Keiji Takeda, Kazuhiro Kawaziri, Akio Higashi -
Patent number: 4355089Abstract: A photoconductive layer is produced upon a substrate by coating the substrate with a solution in an organic solvent of a polyamic acid and of 2,4,7-trinitro-9-fluorenone (TNF) and/or 2,3,4,7-tetranitro-9-fluorenone and heating the coated substrate at a temperature not exceeding 150.degree. C. to form on the substrate a polyimide coating containing the said fluorenone compound as a photosensitizer.Type: GrantFiled: August 8, 1978Date of Patent: October 19, 1982Assignee: Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Ten Behoeve Van Nijverheid, Handel En VerkeerInventors: Jan van Turnhout, Ramesh C. Ahuja
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Patent number: 4339519Abstract: Improvement in the humidity resistance of photoconductive cadmium sulfoselenide (CdSSe) is achieved by soaking commercially available CdSSe in a solution of vinylidene chloride-acrylonitrile copolymer in an organic solvent, followed by removing the excessive solution and then heating the soaked photoconductive material.Type: GrantFiled: December 8, 1980Date of Patent: July 13, 1982Assignee: Pitney Bowes, Inc.Inventor: Mike S. H. Chang
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Patent number: 4316947Abstract: Cadium sulfide for electrophotography is produced by reacting hydrogen sulfide with a solution containing cadmium sulfate, sulfuric acid and hydrochloric acid of a low concentration, and then firing the resulting cadmium sulfide without adding a donor impurity other than that derived from the hydrochloric acid.Type: GrantFiled: September 8, 1980Date of Patent: February 23, 1982Assignee: Canon Kabushiki KaishaInventors: Kiyoshi Suzuki, Hirokuni Kawashima
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Patent number: 4254200Abstract: X-rays or .gamma.-rays are detected by irradiating a beam of high energy radiation onto a crystalline bismuth oxide compound having the formula Bi.sub.10-14 X.sub.1 O.sub.n wherein X is at least one element selected from the group consisting of Al, Ga, Ge, Si and Ti and n is a numeral substantially equal to the stoichiometric amount of oxygen within the compound. The above bismuth oxide crystalline compound may be placed in a radiation dosimeter or be applied as a radiation-sensitive coating on a cylinder or plate of an apparatus for producing electrostatic copies (i.e., an in a xerographic process or the like). This is a division of application Ser. No. 837,197, filed Sept. 28, 1977.Type: GrantFiled: March 2, 1979Date of Patent: March 3, 1981Assignee: Siemens AktiengesellschaftInventors: Helmut Thomann, Christa Grabmaier
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Patent number: 4225222Abstract: A printing drum is disclosed for electrostatic copying. The drum has a photo-electric-sensitive layer consisting of amorphous silicon advantageously containing hydrogen. The layer is designed to have a PN transition. A method is also disclosed for producing the layer by means of decomposition of a conveyed silicon-containing gas to which, if necessary, a gaseous doping material is added during a glow discharge in a heated printing drum.Type: GrantFiled: October 17, 1978Date of Patent: September 30, 1980Assignee: Siemens AktiengesellschaftInventor: Karl Kempter
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Patent number: 4185916Abstract: A composite particle comprising a conductive portion and an insulating portion. The insulating portion is integral and contiguous with the conductive portion.Type: GrantFiled: April 8, 1977Date of Patent: January 29, 1980Assignee: Xerox CorporationInventors: Roger L. Miller, Lloyd F. Bean
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Patent number: RE33094Abstract: In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.Type: GrantFiled: September 11, 1986Date of Patent: October 17, 1989Assignee: Hitachi, Ltd.Inventors: Eiichi Maruyama, Sachio Ishioka, Yoshinori Imamura, Hirokazu Matsubara, Yasuharu Shimomoto, Shinkichi Horigome, Yoshio Taniguchi