Abstract: A system and device for welding training. In one example, a welding training system includes a display configured to show welding features related to a training welding operation. The system also includes a training workpiece having a substantially transparent weld joint configured to be placed adjacent to the display during the training welding operation. The system includes a processing device coupled to the display and configured to provide welding data relating to the training welding operation to the display. The system also includes a training torch comprising an optical sensor. The training torch is coupled to the processing device and configured to provide the processing device with data from the optical sensor corresponding to a position of the training torch relative to the training workpiece.

Abstract: A game apparatus is capable of controlling infrared radiation means for radiating infrared light. The game apparatus executes game processing using imaging information on the infrared light obtained from an input device. The input device takes an image of the infrared light radiated by the infrared radiation means, and also receives an input from a user. The game apparatus comprises pattern storage means; selection means; and radiation control means. The pattern storage means stores at least one signal pattern of an infrared signal usable by a control target device. The selection means selects at least one of the at least one signal pattern stored by the pattern storage means, using the input received by the input device. The radiation control means causes the infrared radiation means to output an infrared signal of the signal pattern selected by the selection means.

Abstract: An etchant of PSG (14) or BPSG with high selectivity to substantially undoped oxide (12) includes a fluorine-liberating compound and a fluorine-scavenging compound. The fluorine-liberating compound is preferably a perfluorinated inorganic compound, and the fluorine-scavenging compound is preferably a hydrogen-liberating compound such as hydrogen. A particularly preferred inorganic fluorine-liberating compound is nitrogen trifluoride. In an exemplary embodiment, etch rate ratios of PSG to undoped oxide as high as 11 to 1 were obtained.