Abstract: The described embodiments of mechanisms of forming a die package and package on package (PoP) structure involve forming a solder paste layer over metal balls of external connectors of a die package. The solder paste layer protects the metal balls from oxidation. In addition, the solder paste layer enables solder to solder bonding with another die package. Further, the solder paste layer moves an intermetallic compound (IMC) layer formed between the solder paste layer and the metal balls below a surface of a molding compound of the die package. Having the IMC layer below the surface strengthens the bonding structure between the two die packages.

Abstract: A substrate for a semiconductor package includes a substrate body having a first surface and a second surface which faces away from the first surface, and formed with at least one bump land on the first surface, and a dam formed and projected over an edge of the first surface of the substrate body, and having an underfill member discharge unit.

Abstract: A method for manufacturing a metal pad structure of a die is provided, the method including: forming a metal pad between encapsulation material of the die, wherein the metal pad and the encapsulation material are separated from each other by a gap; and forming additional material in the gap to narrow at least a part of the gap.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a carrier; mounting an integrated circuit device having component connectors directly on the carrier; placing a restraint structure over the integrated circuit device for controlling warpage of the integrated circuit device during bonding of the component connectors to the carrier causing some of the component connectors to separate from the carrier; and bonding all of the component connectors to the carrier.

Abstract: A semiconductor device has a plurality of semiconductor die disposed over a carrier. An electrical interconnect, such as a stud bump, is formed over the semiconductor die. The stud bumps are trimmed to a uniform height. A substrate includes a bump over the substrate. The electrical interconnect of the semiconductor die is bonded to the bumps of the substrate while the semiconductor die is disposed over the carrier. An underfill material is deposited between the semiconductor die and substrate. Alternatively, an encapsulant is deposited over the semiconductor die and substrate using a chase mold. The bonding of stud bumps of the semiconductor die to bumps of the substrate is performed using gang reflow or thermocompression while the semiconductor die are in reconstituted wafer form and attached to the carrier to provide a high throughput of the flipchip type interconnect to the substrate.

Abstract: A semiconductor wafer has a plurality of semiconductor die separated by a saw street. The wafer is mounted to dicing tape. The wafer is singulated through the saw street to expose side surfaces of the semiconductor die. An ESD protection layer is formed over the semiconductor die and around the exposed side surfaces of the semiconductor die. The ESD protection layer can be a metal layer, encapsulant film, conductive polymer, conductive ink, or insulating layer covered by a metal layer. The ESD protection layer is singulated between the semiconductor die. The semiconductor die covered by the ESD protection layer are mounted to a temporary carrier. An encapsulant is deposited over the ESD protection layer covering the semiconductor die. The carrier is removed. An interconnect structure is formed over the semiconductor die and encapsulant. The ESD protection layer is electrically connected to the interconnect structure to provide an ESD path.

Abstract: Embodiments that allow both high density and low density interconnection between microelectronic die and motherboard via Direct Chip Attach (DCA) are described. In some embodiments, microelectronic die have a high density interconnect with a small bump pitch located along one edge and a lower density connection region with a larger bump pitch located in other regions of the die. The high density interconnect regions between die are interconnected using an interconnecting bridge made out of a material that can support high density interconnect manufactured into it, such as silicon. The lower density connection regions are used to attach interconnected die directly to a board using DCA. The high density interconnect can utilize current Controlled Collapsed Chip Connection (C4) spacing when interconnecting die with an interconnecting bridge, while allowing much larger spacing on circuit boards.

Abstract: A method of assembling a packaging structure is provided and includes directly electrically interconnecting respective active surfaces of first and second chips in a face-to-face arrangement, electrically interconnecting at least one of the respective sidewalls of the first and second chips to a common chip and orienting the respective active surfaces of the first and second chips transversely with respect to the common chip.

Abstract: A method of producing a laminate insert package includes providing a first metal layer, printing a first dielectric layer on the first metal layer, providing a second metal layer, printing a second dielectric layer on the second metal layer, and printing a dielectric spacer layer on the first dielectric layer. At least one semiconductor chip is attached to either the first or the second metal layer. A first layer assembly comprising the first metal layer, the first dielectric layer, the dielectric spacer layer and a second layer assembly comprising the second metal layer and the second dielectric layer are brought together. The first and second layer assemblies are laminated to form a laminate insert package, whereby the at least one semiconductor chip is embedded within the laminate insert package.

Abstract: An embedded package in which active elements, such as semiconductor chips, are embedded within a package substrate. The semiconductor chips, embedded within a dielectric layer, are coupled with circuit wires to ensure electrical and signal continuity. When connections between the semiconductor chip and the package substrate are performed in different directions, there is a reduction in overall interconnection area, connection reliability is improved, leakage currents are reduced, and higher device yields can be realized.

Abstract: A semiconductor device includes a resin package, a semiconductor element, a sealing resin, and a metal terminal. The sealing resin is filled into the resin package to seal the semiconductor element and the insulating substrate. The metal terminal is extended from the inside of the resin package to the outside of the resin package and electrically is connected to the semiconductor element inside of the resin package. The metal terminal has a busbar mounting portion provided with a hole for a bolt to pass therethrough and configured by a parallel planar body on the top surface of the resin package including the resin top plate, a lead portion connected to the busbar mounting portion extended in a direction perpendicular to the surface of the heat sink, and a spring structure having a bias in a direction perpendicular to the surface of the resin package in the busbar mounting portion.

Abstract: Disclosed are a package structure and a package method. The package structure comprises an IC bare die, having bare die pads formed on a surface; a flexible packaging substrate, having first pads formed on a first surface and second pads formed on a second surface; and a plurality of bumps, previously formed on the first surface of the flexible packaging substrate. The bumps have different heights, and correspond to the first pads and contact the bare die pads respectively. Pressing or heating is implemented to package the IC bare die. The package structure further comprises a printed circuit board, having a plurality of contact pads. The second pads of the flexible packaging substrate respectively contact with the contact pads via solders. Connection is implemented by pressing or heating. Extremely low stress is generated to the packaging substrate and the printed circuit board.

Abstract: An apparatus including a die including a first side and an opposite second side including a device side with contact points; and a build-up carrier including at least one layer of conductive material disposed on a first side of the die, and a plurality of alternating layers of conductive material and dielectric material disposed on the second side of the die, wherein the at least one layer of conductive material on the first side of the die is coupled to at least one of (1) at least one of the alternating layers of conductive material on the second side of the die and (2) at least one of the contact points of the die. A method including forming a first portion of a build-up carrier adjacent one side of a die, and forming a second portion of the build-up carrier adjacent another side of the die.

Abstract: A semiconductor assembly that may enhance dissipation of heat. The assembly includes a first die of a first material and defining a first passage. A second material, such as silicon carbide, diamond, or carbon nanotube, having a higher heat conductivity than the first material is disposed in the center of the first passage. An electronic component, which may be, for example, another die or a printed wiring board, is adjacent to the first die, is predominantly of a third material, and defines a first opening. A fourth material having a higher heat conductivity than the third material is disposed in the center of the first opening. The first opening is in alignment with the first passage, and may provide for heat transfer with a chimney effect between the materials of relatively high heat conductivity. A mold including a high heat conductivity material may also be provided.

Abstract: Discussed generally herein are devices that include high density interconnects between dice and techniques for making and using those devices. In one or more embodiments a device can include a bumpless buildup layer (BBUL) substrate including a first die at least partially embedded in the BBUL substrate, the first die including a first plurality of high density interconnect pads. A second die can be at least partially embedded in the BBUL substrate, the second die including a second plurality of high density interconnect pads. A high density interconnect element can be embedded in the BBUL substrate, the high density interconnect element including a third plurality of high density interconnect pads electrically coupled to the first and second plurality of high density interconnect pads.

Abstract: Embodiments of the present disclosure provide an apparatus comprising a substrate layer, a metal ring structure disposed on the substrate layer, the metal ring structure having an opening defined therein, and a solder mask layer coupled to (i) the metal ring structure and (ii) the substrate layer through the opening defined in the metal ring structure, the solder mask layer having a solder mask opening defined therein, wherein an edge of solder mask material defining the solder mask opening overlaps a portion of the opening defined in the metal ring structure. Other embodiments may be described and/or claimed.

Abstract: A method for making the same is disclosed. First, a first substrate and a second substrate are provided. The first substrate includes a release film attached to a carrier. The second substrate includes a copper film covered with a solder mask. Second, the solder masked is patterned. Next, the release film and the patterned solder mask are pressed together so that the first substrate is attached to the second substrate. Then, the copper film is patterned to form a first pattern and a second pattern. The first pattern is in direct contact with the release film and the second pattern is in direct contact with the patterned solder mask. Later, a passivation is formed to cover the first pattern and the second pattern to form a circuit board structure. Afterwards, a package is formed on the carrier to form a packaging structure.

Abstract: The chip module includes a carrier, a semiconductor chip arranged on or embedded inside the carrier, and an insulation layer that at least partly covers a face of the carrier. The dielectric constant ?r and the thermal conductivity ? of the insulation layer satisfy the condition ?·?r<4.0 W·m?1·K?1.

Abstract: A circuit board structure at least includes a patterned solder mask, a first conductive pattern, a second conductive pattern adjacent to the first conductive pattern and in direct contact with the patterned solder mask and a passivation respectively covering the first conductive pattern and the second conductive pattern.

Abstract: A semiconductor device includes a metal substrate including a metal base plate, an insulating sheet located on the metal base plate, and a wiring pattern located on the insulating sheet, and a semiconductor element located on the metal substrate. The semiconductor element is sealed with a molding resin. The molding resin extends to side surfaces of the metal substrate. On the side surfaces of the metal substrate, the insulating sheet and the wiring pattern are not exposed from the molding resin, whereas the metal base plate includes a projecting portion exposed from the molding resin.

Abstract: A method of fabricating a light emitting diode device comprises providing a substrate, growing an epitaxial structure on the substrate. The epitaxial structure includes a first layer on the substrate, an active layer on the first layer and a second layer on the active layer. The method further comprises depositing a conductive and reflective layer on the epitaxial structure, forming a group of first trenches and a second trench. Each of the first and second trenches extends from surface of the conductive and reflective layer to the first layer to expose part of the first layer. The method further comprises depositing conductive material to cover a portion of the conductive and reflective layer to form a first contact pad, and cover surfaces between adjacent first trenches to form a second contact pad. The second contact pad electrically connects the first layer by filling the conductive material in the first trenches.

Abstract: In regard to a semiconductor device having a multilayered wiring board where a semiconductor chip is embedded inside, a technology which allows the multilayered wiring board to be made thinner is provided. A feature of the present invention is that, in a semiconductor device where bump electrodes are formed over a main surface (element forming surface) of a semiconductor chip embedded in a chip-embedded wiring board, an insulating film is formed over a back surface (a surface on the side opposite to the main surface) of the semiconductor chip. As a result, it becomes unnecessary to form a prepreg over the back surface of the semiconductor chip. Therefore, an effect of thinning the chip-embedded wiring board in which the semiconductor chip is embedded is obtained.

Abstract: One embodiment of the present invention sets forth an integrated circuit package including a substrate, an integrated circuit die, and a plurality of solder bump structures. The substrate includes a first plurality of interconnects disposed on a first surface of the substrate. The integrated circuit die includes a second plurality of interconnects disposed on a first surface of the integrated circuit die. The plurality of solder bump structures couple the first plurality of interconnects to the second plurality of interconnects. The first plurality of interconnects are configured to be substantially aligned with the second plurality of interconnects when the integrated circuit package is at a first temperature within a range of about 0° C. to about ?100° C. The first plurality of interconnects are configured to be offset from the second plurality of interconnects when the integrated circuit package is at a temperature above the first temperature.

Abstract: Some implementations provide a semiconductor device that includes a substrate coupled to a die through a thermal compression bonding process. The semiconductor device also includes a trace coupled to the substrate. The trace includes a first conductive material having a first oxidation property. The trace also includes a first surface layer including a second conductive material having a second oxidation property. The second oxidation property is less susceptible to oxidation than the first oxidation property. The first and second conductive materials are configured to provide an electrical path between the die and the substrate. The first surface layer has a thickness that is 0.3 microns (?m) or less.

Abstract: A carrier and a semiconductor chip are provided. A connection layer is applied to a first main face of the semiconductor chip. The connection layer includes a plurality of depressions. A filler is applied to the connection layer or to the carrier. The semiconductor chip is attached to the carrier so that the connection layer is disposed between the semiconductor chip and the carrier. The semiconductor chip is affixed to the carrier.

Abstract: A chip package is disclosed. The package includes a carrier substrate, at least two semiconductor chips, a fill material layer, a protective layer, and a plurality of conductive bumps. The carrier substrate includes a grounding region. The semiconductor chips are disposed overlying the grounding region of the carrier substrate. Each semiconductor chip includes at least one signal pad and includes at least one grounding pad electrically connected to the grounding region. The fill material layer is formed overlying the carrier substrate and covers the semiconductor chips. The protective layer covers the fill material layer. The plurality of conductive bumps is disposed overlying the protective layer and is electrically connected to the semiconductor chips. A fabrication method of the chip package is also disclosed.

Abstract: Provided are a thin film silicon wafer having high gettering capability, a manufacturing method therefor, a multi-layered silicon wafer formed by laminating the thin film silicon wafers, and a manufacturing method therefor. The thin film silicon wafer is manufactured by: forming one or more gettering layers immediately below a device layer which is formed in a vicinity of a front surface of a semiconductor silicon wafer; fabricating a device in the device layer of the semiconductor silicon wafer; and after the device has been fabricated, removing part of the semiconductor silicon wafer from a rear surface thereof to immediately below the gettering layers so as to leave at least one of the gettering layers in place. As a result, the thin film silicon wafer is allowed to have gettering capability even after having been reduced in thickness to be in a thin film form.

Abstract: A semiconductor encapsulation comprises a lead frame further comprising a chip carrier and a plurality of pins in adjacent to the chip carrier. A plurality of grooves opened from an upper surface of the chip carrier partially dividing the chip carrier into a plurality of chip mounting areas. A bottom portion of the grooves is removed for completely isolate each chip mounting area, wherein a width of the bottom portion of the grooves removed is smaller than a width of the grooves. In one embodiment, a groove is located between the chip carrier and the pins with a bottom portion of the groove removed for isolate the pins from the chip carrier, wherein a width of the bottom of the grooves removed is smaller than a width of the grooves.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing an array of leads having a jumper lead and a covered contact; coupling an insulated bonding wire between the jumper lead and the covered contact; attaching an integrated circuit die over the covered contact; and coupling a bond wire between the integrated circuit die and the jumper lead including coupling the integrated circuit die to the covered contact through the insulated bonding wire.

Abstract: A method of forming a plurality of bump structures on a substrate includes forming an under bump metallurgy (UBM) layer on the substrate, wherein the UBM layer contacts metal pads on the substrate. The method further includes forming a photoresist layer over the UBM layer, wherein the photoresist layer defines openings for forming the plurality of bump structures. The method further includes plating a plurality of layers in the openings, wherein the metal layers are part of the plurality of bump structures. The method further includes planarizing the plurality of bump structures after the metal layers are plated to a targeted height from a surface of the substrate.

Abstract: Various embodiments provide semiconductor packaging structures and methods for forming the same. In an exemplary method, a chip having a metal interconnect structure thereon can be provided. An insulating layer can be formed on the chip to expose the metal interconnect structure. A columnar electrode can be formed on the metal interconnect structure. A portion of the metal interconnect structure surrounding a bottom of the columnar electrode can be exposed. A diffusion barrier layer can be formed on sidewalls and a top surface of the columnar electrode, and on the exposed portion of the metal interconnect structure surrounding the bottom of the columnar electrode. A solder ball can then be formed on the diffusion barrier layer. The solder ball can wrap at least the sidewalls and the top surface of the columnar electrode.

Abstract: An IC packaging method is provided. The method includes providing a semiconductor substrate. The semiconductor substrate has a metal pad and an insulating layer and the insulating layer has an opening to expose the meal pad. The method also includes forming an under-the-ball meal electrode on the exposed metal pad. The under-the-ball metal electrode has an electrode body and an electrode tail, the electrode body is located at a bottom portion of the under-the-ball metal electrode and is in contact with the metal pad, and the electrode tail is located at a top portion of the under-the-ball meal electrode. Further, the method includes forming a solder ball on the under-the-ball metal electrode.

Abstract: A packaging substrate having a through-holed interposer embedded therein and a fabrication method of the packaging substrate are provided, where the packaging substrate includes: a molding layer having opposite first and second surfaces; a through-holed interposer embedded in the molding layer and flush with the second surface; a redistribution-layer structure embedded in the molding layer and disposed on the through-holed interposer and having a plurality of electrode pads exposed from the first surface of the molding layer; and a built-up structure disposed on the second surface of the molding layer and electrically connected to the through-holed interposer.

Abstract: A semiconductor mounting device including a first substrate having first insulation layers, first conductor layers formed on the first insulation layers and via conductors connecting the first conductor layers, a second substrate having a core substrate, second conductor layers, through-hole conductors and buildup layers having second insulation layers and third conductor layers, first bumps connecting the first and second substrates and formed on the outermost first conductor layer on the outermost first insulation layer, and second bumps positioned to connect a semiconductor element and formed on the outermost third conductor layer on the outermost second insulation layer.

Abstract: A method to vertically bond a chip to a substrate is provided. The method includes forming a metal bar having a linear aspect on the substrate, forming a solder paste layer over the metal bar to form a solder bar, forming a plurality of metal pads on the substrate, and forming a solder paste layer over the plurality of metal pads to form a plurality of solder pads on the substrate. Each of the plurality of solder pads is offset from a long edge the solder bar by an offset-spacing. The chip to be vertically bonded to the substrate has a vertical-chip thickness fractionally less than the offset-spacing. The chip to be vertically bonded fits between the plurality of solder pads and the solder bar. The solder bar enables alignment of the chip to be vertically bonded.

Abstract: An electrical interconnect providing an interconnect between contacts on an IC device and contact pads on a printed circuit board (PCB). The electrical interconnect includes a resilient substrate with a plurality of through holes extending from a first surface to a second surface. A resilient material is located in the through holes. The resilient material includes an opening extending from the first surface to the second surface. A plurality of discrete, free-flowing conductive nano-particles are located in the openings of the resilient material. The conductive particles are substantially free of non-conductive materials. A plurality of first contact members are located in the through holes adjacent the first surface and a plurality of second contact members are located in the through holes adjacent the second surface. The first and second contact members are electrically coupled to the nano-particles.

Abstract: Disclosed herein is a method for manufacturing a package structure. According to an exemplary embodiment of the present invention, the method for manufacturing a package structure includes: preparing a die having a metal pillar disposed on one surface thereof; bonding the die on the metal plate to allow the metal pillar to face the outside; forming an insulating film covering the metal plate and the die; buffing the insulating film so as to expose the metal pillar; and manufacturing a first package structure by forming a circuit structure electrically connected to the metal pillar on the insulating film.

Abstract: A chip package is provided. The chip package includes a chip carrier, a voltage supply lead, a sensing terminal and a chip disposed over the chip carrier. The chip includes a first terminal and a second terminal, wherein the first terminal electrically contacts the chip carrier. The chip package also includes an electrically conductive element formed over the second terminal, the electrically conductive element electrically coupling the second terminal to the voltage supply lead and the sensing terminal.

Abstract: A semiconductor unit includes a base, an insulating substrate bonded to the base, a conductive plate made of a metal of poor solderability, a semiconductor device mounted to the insulating substrate through the conductive plate, and a metal plate interposed between the conductive plate and the semiconductor device and made of a metal of good solderability as compared to the metal used for the conductive plate. The base, the insulating substrate, the conductive plate and the metal plate are brazed together, and the semiconductor device is soldered to the metal plate.

Abstract: A semiconductor device includes a semiconductor chip, a connection electrode including a first land electrode electrically coupled with the semiconductor chip, and a through electrode formed on an upper surface of the first land electrode to be electrically coupled with the first land electrode using a stud bump, and a sealing resin, through which the connection electrode passes, for sealing the semiconductor chip.

Abstract: A semiconductor device may include at least one pad adjacent a top surface of the device, and a metal crack stop structure below the at least one pad. The metal crack structure may have an inner envelope and an outer envelope, and may be configured to be vertically aligned with the at least one pad so that an edge of the at least one pad is between the inner and outer envelopes.

Abstract: An assembly and method of making same are provided. The assembly can be formed by juxtaposing a first electrically conductive element overlying a major surface of a first semiconductor element with an electrically conductive pad exposed at a front surface of a second semiconductor element. An opening can be formed extending through the conductive pad of the second semiconductor element and exposing a surface of the first conductive element. The opening may alternatively be formed extending through the first conductive element. A second electrically conductive element can be formed extending at least within the opening and electrically contacting the conductive pad and the first conductive element. A third semiconductor element can be positioned in a similar manner with respect to the second semiconductor element.

Abstract: An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, and bonding the semiconductor element and the base by applying heat having a temperature of 200 to 900° C. to the semiconductor device and the base.

Abstract: A multi-layered ceramic package comprises: a signal layer with identified chip/device area(s) that require a supply of power; and a voltage power (Vdd) layer and a ground (Gnd) layer disposed on opposite sides directly above or below and adjacent to the signal layer and providing a first reference mesh plane and a second reference mesh plane configured utilizing a hybrid mesh scheme. The hybrid mesh scheme comprises: a full dense mesh in a first area directly above or below the identified chip/device area(s); a half dense mesh in a second area that is above or below the edge(s) of the chip/device area; and a wider mesh pitch in all other areas The Vdd traces are aligned to run parallel and adjacent to signal lines in those other areas. Wider traces are provided within the mesh areas that run parallel and adjacent to signal lines.

Abstract: According to one embodiment, the semiconductor device in the embodiment has an assembly substrate, a semiconductor chip, and a jointing layer. The semiconductor chip is joined to the assembly substrate via the jointing layer. An intervening diffusion barrier layer may be interposed between the chip and jointing layer. The jointing layer is an alloy layer mainly made of any metal selected from Sn, Zn and In or an alloy of Sn, Zn and In, and any metal selected from Cu, Ni, Ag, Cr, Zr, Ti and V or an alloy of any metal selected from Cu, Ni, Ag, Cr, Zr, Ti and V and any metal selected from Sn, Zn and In, where the alloy has a higher melting temperature than that of Sn, Zn and In or an alloy of Sn, Zn and/or In.

Abstract: A semiconductor chip includes a semiconductor body and a chip metallization applied on the semiconductor body. The chip metallization has an underside facing away from the semiconductor body. The chip further includes a layer stack applied to the underside of the chip metallization and having a number N1?1 or N1?2 of first partial layers and a number N2?2 of second partial layers. The first partial layers and the second partial layers are arranged alternately and successively such that at least one of the second partial layers is arranged between the first partial layers of each first pair of the first partial layers and such that at least one of the first partial layers is arranged between the second partial layers of each second pair of the second partial layers.

Abstract: A low thermal stress package for large area semiconductor dies. The package may include a substrate and at least one pedestal extending from the substrate, wherein the pedestal may have a mounting surface that is smaller than a mounting surface of a semiconductor die that is mounted to the pedestal. The bonded area between the die and the pedestal is therefore reduced relative to conventional semiconductor package substrates, as is the amount of thermal stress sustained by the die during thermal cycling.

Abstract: Embodiments of the present disclosure provide semiconductor packaging techniques that form a substrate using metal and insulating materials. The substrate includes a first surface that is bonded to a semiconductor device and a second surface that is bonded to a printed circuit board. The substrate is formed using several techniques that minimize the amount of mask levels used to form the substrate. For example, a metal substrate is patterned to form a three dimensional pattern on the surface. A dielectric material is deposited on the three dimensional pattern. Using several patterning and polishing embodiments described herein, the metal/dielectric substrate is patterned and polished to form a substantially flush surface that is bonded to the semiconductor device. In one embodiment, the top surface of the metal/dielectric substrate is patterned to expose the underlying metal substrate and the bottom surface of the metal substrate is polished to be substantially flush with the dielectric material.

Abstract: In accordance with an embodiment of the present invention, a semiconductor package includes a semiconductor chip disposed within an encapsulant, and a first coil disposed in the semiconductor chip. A dielectric layer is disposed above the encapsulant and the semiconductor chip. A second coil is disposed above the dielectric layer. The first coil is magnetically coupled to the second coil.

Abstract: A composite interposer can include a substrate element and a support element. The substrate element can have first and second opposite surfaces defining a thickness of 200 microns or less, and can have a plurality of contacts exposed at the first surface and electrically conductive structure extending through the thickness. The support element can have a body of at least one of dielectric or semiconductor material exposed at a second surface of the support element, openings extending through a thickness of the body, conductive vias extending within at least some of the openings in a direction of the thickness of the body, and terminals exposed at a first surface of the support element. The second surface of the support element can be united with the second surface of the substrate element. The terminals can be electrically connected with the contacts through the conductive vias and the electrically conductive structure.