Abstract: A semiconductor wafer includes a semiconductor chip that includes a photonic device. The semiconductor chip includes an optical fiber attachment region in which an optical fiber alignment structure is to be fabricated. The optical fiber alignment structure is not yet fabricated in the optical fiber attachment region. The semiconductor chip includes an in-plane fiber-to-chip optical coupler positioned at an edge of the optical fiber attachment region. The in-plane fiber-to-chip optical coupler is optically connected to the photonic device. A sacrificial optical structure is optically coupled to the in-plane fiber-to-chip optical coupler. The sacrificial optical structure includes an out-of-plane optical coupler configured to receive input light from a light source external to the semiconductor chip. At least a portion of the sacrificial optical structure extends through the optical fiber attachment region.

Abstract: A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.

Abstract: In a method for producing a vapor deposition mask including a resin mask 20 including resin mask openings 25 corresponding to a pattern to be produced by vapor deposition, and a metal mask 10 including a metal mask opening 15, the metal mask being stacked on one surface of the resin mask, when the plurality of resin mask openings 25 are formed, as to any one resin mask opening 25a of the plurality of resin mask openings 25, the resin mask opening 25 is formed such that in a thicknesswise cross section of the resin mask, an acute angle (?1) formed by one inner wall surface forming the one resin mask opening and the other surface of the resin mask is different from an acute angle (?2) formed by the other inner wall surface forming the one resin mask opening and the other surface of the resin mask.

Abstract: The present invention discloses a MEMS sound transducer. The sound transducer includes: a substrate having a back cavity; a stator, the stator having a central portion suspending on the back cavity and at least two fixed arms extending from the center portion to the substrate and fixed on the substrate; a movable cantilever, mounted to the substrate, at least partially facing the back cavity and disposed between two adjacent fixed arms; wherein, the movable cantilever has a fixed end mounted to the substrate and a free edge facing the fixed arms with space; the free edge has a plurality of moving comb-fingers formed thereon; the stator has a plurality of fixed comb-fingers formed on the fixed arms; the moving comb-fingers and the fixed comb-fingers fit to each other to form a capacitor with an overlap area.

Abstract: A method of manufacturing flexible OLED display panel is provided. The method comprises following steps. Providing a glass carrier, sequentially forming a flexible substrate, a low temperature poly-Si layer and OLED element layer on a surface of the glass carrier; forming a planar layer on a second surface of the glass carrier which is away from the flexible substrate and obtaining a planning OLED display panel; removing the glass carrier by laser lift-off the planning OLED display panel and obtaining the flexible OLED display panel. The method could reduce the problem of lower peeling successful rate caused by the unevenly distributing in the flexible substrate during the laser lift-off process.

Abstract: Disclosed is a method of manufacturing a compound semiconductor solar cell including forming a compound semiconductor layer; and forming a defect-removed portion formed of an empty space through removing a portion of the compound semiconductor layer where a defect existed prior to removal. The forming of the defect-removed portion includes forming a mask material layer on the compound semiconductor layer; forming a mask layer through forming an opening at a portion of the mask material layer corresponding to the portion of the compound semiconductor layer where the defect exists; and etching the compound semiconductor layer for removing the portion of the compound semiconductor layer where the defect exists through the opening of the mask layer to form the defect-removed portion.

Abstract: An electronic display row drivers or column drivers that send reference currents or voltages to microdrivers to be used to drive micropixels to particular levels. The microdrivers, in turn, ship current to micropixels that display images based at least in part on the shipped current.

Abstract: An optical proximity sensor arrangement comprises a semiconductor substrate (100) with a main surface (101). A first integrated circuit (200) comprises at least one light sensitive component (201). The first integrated circuit is arranged on the substrate at or near the main surface. A second integrated circuit (300) comprises at least one light emitting component (301), and is arranged on the substrate at or near the main surface. A light barrier (400) is arranged between the first and second integrated circuits. The light barrier being designed to block light to be emitted by the at least one light emitting component from directly reaching the at least one light sensitive component. A multilayer mask (500) is arranged on or near the first integrated circuit and comprising a stack (501) of a first layer (502) of first elongated light blocking slats (503) and at least one second layer (504) of second elongated light blocking slats (505).

Abstract: A method for producing a light-emitting diode with a stacked structure, having a first region and a second region and a third region, wherein all three regions have a substrate and an n-doped lower cladding layer and an active layer generating electromagnetic radiation, wherein the active layer includes a quantum well structure, and a p-doped upper cladding layer, and the first region additionally has a tunnel diode formed on the upper cladding layer and composed of a p+ layer and an n+ layer, and an n-doped current distribution layer. The current distribution layer and the n-doped contact layer are covered with a conductive trace. At least the lower cladding layer, the active layer, the upper cladding layer, the tunnel diode, and the current distribution layer are monolithic in design. The second region has a contact hole with a bottom region.

Abstract: A gaming system includes a credit mechanism configured to receive credit input by a player for contribution to a credit balance and a display configured to display a plurality of standard symbol positions and optionally one or more additional symbol positions. The system also includes a betting module configured to determine a bet amount and game play instructions on commencement of a game input using a player interface, the bet subtracted from the credit balance. A symbol selector selects symbols for display in the plurality of standard symbol positions and, dependent on the amount wagered, further arranged to select and display symbols in the additional symbol position(s) to increase the probability of a win outcome being generated. An outcome determiner determines an outcome of the game based on the displayed symbol positions.

Abstract: A fluid analyzer includes a substrate, a quantum cascade laser formed on a surface of the substrate and including a first light-emitting surface and a second light-emitting surface facing each other, a first quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a first light incident surface facing the first light-emitting surface, a second quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a second light incident surface facing the second light-emitting surface, and a resin member covering at least the second light-emitting surface and the second light incident surface and having optical transparency and an electrical insulation property. A first space in which a fluid to be analyzed is disposed is provided in a first area between the first light-emitting surface and the first light incident surface.

Abstract: The present invention relates to a micromechanical device comprising a multi-layer micromechanical structure including only homogenous silicon material. The device layer comprises at least a rotor and at least two stators. At least some of the rotor and at least two stators are at least partially recessed to at least two different depths of recession from a first surface of the device layer and at least some of the rotor and at least two stators are at least partially recessed to at least two different depths of recession from a second surface of the device layer.

Abstract: A refractive index of the active layer is obtained by a photoluminescence inspection and an equivalent refractive index of the optical semiconductor element is computed. A refractive index of the optical waveguide layer is obtained by a photoluminescence inspection and an equivalent refractive index of the optical waveguide is computed. A film thickness of the refractive index adjustment layer is adjusted by etching the refractive index adjustment layer so that the equivalent refractive index of the optical semiconductor element and the equivalent refractive index of the optical waveguide are matched to each other. After adjusting the film thickness of the refractive index adjustment layer, a contact layer is formed on the second cladding layer and the refractive index adjustment layer. The optical waveguide is a passive waveguide to which no electrical field is applied and no current is injected.

Abstract: A display device and a method of manufacturing the same are disclosed, in which a sensing electrode for sensing a touch of a user is built in a display panel, whereby a separate touch screen is not required on an upper surface of the display panel and thus thickness and manufacturing cost are reduced.

Abstract: A method for structuring a layered structure, for example, of a micromechanical component, from two semiconductor layers between which an insulating and/or etch stop layer is situated includes forming a first etching mask on a first side of the first semiconductor layer, carrying out a first etching step, starting from a first outer side, for structuring the first semiconductor layer, forming a second etching mask on a second side of the second semiconductor layer, and carrying out a second etching step, starting from the second outer side, for structuring the second semiconductor layer. After carrying out the first etching step and prior to carrying out the second etching step, at least one etching protection material is deposited on at least one trench wall of at least one first trench, which is etched in the first etching step.

Abstract: The invention relates to a motor vehicle power steering mechanism having four groups of MOSFETs, in which with respect to the direct current voltage vehicle electrical system the MOSFETs of the first group (20) and of the second group (21) are arranged with their parasitic diodes in the reverse direction and the MOSFETs of the third group (31) and/or of the fourth group (30) are arranged with their parasitic diodes in the forward direction.

Abstract: A semiconductor device is described that includes a first electrical circuit and a second electrical circuit formed on a semiconductor on insulator wafer. The semiconductor on insulator wafer has a layer of semiconducting material formed over a buried layer of insulating material formed over a supporting layer of material. A wide deep trench is formed in the semiconductor on insulator wafer to galvanically isolate the first electrical circuit from the second electrical circuit. The first electrical circuit and the second electrical circuit are coupled together for exchanging energy between the galvanically isolated electrical circuits.

Abstract: An optical integrated circuit may include a substrate including a single crystalline semiconductor material, a passive element extending in a <100> crystal orientation of the substrate and including the single crystalline semiconductor material, and an active element extending in a <110> crystal orientation of the substrate and including the single crystalline semiconductor material.

Abstract: A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation <110> and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation <010>.

Abstract: A method is disclosed for forming conductive vias in a substrate by filling preformed via holes, preferably through via holes, with conductive material. The method includes providing a plurality of preformed objects at least partly including ferromagnetic material on a surface of the substrate; providing a magnetic source on an opposite side of the substrate with respect to the plurality of preformed objects, thereby at least partly aligning at least a portion of the preformed objects with a magnetic field associated with the magnetic source; and moving the magnetic source relative the substrate, or vice versa, thereby moving the at least portion of the preformed objects into at least a portion of the via holes.

Abstract: Systems and methods for preparing films using sequential ion implantation, and films formed using same, are provided herein. A structure prepared using ion implantation may include a substrate; an embedded structure having pre-selected characteristics; and a film within or adjacent to the embedded structure and including ions having a perturbed arrangement arising from the presence of the embedded structure. The perturbed arrangement may include the ions being covalently bonded to each other, to the embedded structure, or to the substrate, whereas the ions instead may be free to diffuse through the substrate in the absence of the embedded structure. The embedded structure may inhibit or impede the ions from diffusing through the substrate, such that the ions instead covalently bond to each other, to the embedded structure, or to the substrate. The film may include, for example, diamond-like carbon, graphene, or SiC having a pre-selected phase.

Abstract: An electro-optic modulator including a semiconductor region, a first reflecting region over the semiconductor region and an anti-reflecting region on an opposite surface of the semiconductor region from the first reflecting layer. The semiconductor region includes a first doped region and a second doped region.

Abstract: There is herein described light emitting medical devices and a method of manufacturing said medical devices. More particularly, there is described integrated light emitting medical devices (e.g. neural devices) capable of being used in optogenetics and a method of manufacturing said medical devices.

Abstract: A photoconductor comprising a layer stack with a semiconductor layer photoconductive for a predetermined wavelength range between two semiconductor boundary layers with a larger band gap than the photoconductive semiconductor layer on a substrate, wherein the semiconductor boundary layers comprise deep impurities for trapping and recombining free charge carriers from the photoconductive semiconductor layer, and two electrodes connected to the photoconductive semiconductor layer, for lateral current flow between the electrodes through the photoconductive semiconductor layer.

Abstract: A backside illuminated image sensor includes a semiconductor layer having a back-side surface and a front-side surface. The semiconductor layer includes a pixel array region including a plurality of photodiodes configured to receive image light through the back-side surface of the semiconductor layer. The semiconductor layer also includes a peripheral circuit region including peripheral circuit elements for operating the plurality of photodiodes that borders the pixel array region. The peripheral circuit elements emit photons. The peripheral circuit region also includes a doped semiconductor region positioned to absorb the photons emitted by the peripheral circuit elements to prevent the plurality of photodiodes from receiving the photons.

Abstract: According to one embodiment, a semiconductor light emitting element includes a first semiconductor layer of an n-type, a second semiconductor layer of a p-type, and a light emitting unit. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer includes a nitride semiconductor. The light emitting unit is provided between the first semiconductor layer and the second semiconductor layer. The light emitting unit includes a plurality of well layers stacked alternately with a plurality of barrier layers. The well layers include a first p-side well layer most proximal to the second semiconductor layer, and a second p-side well layer second most proximal to the second semiconductor layer. A localization energy of excitons of the first p-side well layer is smaller than a localization energy of excitons of the second p-side well layer.

Abstract: This disclosure discloses a method of manufacturing a light-emitting device, comprising proving a single growth substrate having a first major surface and a second major surface; forming a plurality of light-emitting stacks on the first major surface, wherein the light-emitting stacks are electrically connected to each other in series via a first electrical connecting structure; forming an electronic device on the second major surface; and forming a second electrical connecting structure extending from the first major surface to the second major surface and electrically connecting the first light-emitting stacks and the electronic device, wherein the electronic device comprises a resistance, an inductance, capacitance, or a rectifying device, and wherein the material of the resistance comprises tantalum nitride (TaN), silicon-chromium alloy (SiCr), or nickel-chromium alloy (NiCr).

Abstract: A bonding pad structure is provided that includes two conductive layers and a connective layer interposing the two conductive layers. The connective layer includes a contiguous, conductive structure. In an embodiment, the contiguous conductive structure is a solid layer of conductive material. In other embodiments, the contiguous conductive structure is a conductive network including, for example, a matrix configuration or a plurality of conductive stripes. At least one dielectric spacer may interpose the conductive network. Conductive plugs may interconnect a bond pad and one of the conductive layers.

Abstract: A hybrid MOS optical modulator. The optical modulator includes an optical waveguide, a cathode comprising a first material and formed in the optical waveguide, and an anode comprising a second material dissimilar from the first material and formed in the optical waveguide, the anode adjoining the cathode, a capacitor being defined between the anode and the cathode.

Abstract: An near-field light device (100) is provided with: a first electrode layer (123) having a protruding portion (123a); a second electrode layer (121); and a light emitting layer (122), the protruding portion protrudes along a predetermined direction (Y axis direction) to be capable of extracting energy which is caused by emission of light at the light emitting layer, the predetermined direction intersects with a laminated direction (X axis direction) of the near-field light device, an edge surface of at least one portion of the projection portion is located at more outward side in the optical device than an edge surface of the second electrode layer is.

Abstract: Optopair for use in sensors and analyzers of gases such as methane, and a fabrication method therefor is disclosed. It comprises: a) an LED, either cascaded or not, having at least one radiation emitting area, whose spectral maximum is de-tuned from the maximum absorption spectrum line of the gas absorption spectral band; and b) a Photodetector, whose responsivity spectral maximum can be either de-tuned from, or alternatively completely correspond to the maximum absorption spectrum line of the absorption spectral band of the gas. Modeling the LED emission and Photodetector responsivity spectra and minimizing the temperature sensitivity of the optopair based on the technical requirements of the optopair signal registration circuitry, once the spectral characteristics of the LED and Photodetector materials and the temperature dependencies of said spectral characteristics are determined, provides the LED de-tuned emission and Photodetector responsivity target peaks respectively.

Abstract: A resonant transducer includes a silicon single crystal substrate, a silicon single crystal resonator disposed over the silicon single crystal substrate, a shell made of silicon, surrounding the resonator with a gap, and forming a chamber together with the silicon single crystal substrate, an exciting module configured to excite the resonator, a vibration detecting module configured to detect vibration of the resonator, a first layer disposed over the chamber, the first layer having a through-hole, a second layer disposed over the first layer, a third layer covering the first layer and the second layer, and a projection extending from the second layer toward the resonator, the projection being spatially separated from the resonator, the projection being separated from the first layer by a first gap, the second layer being separated from the first layer by a second gap, the first gap is communicated with the second gap.

Abstract: The present invention relates to a touching-type electronic paper and method for manufacturing the same. The touching-type electronic paper includes a TFT substrate and a transparent electrode substrate which are disposed as a cell. The transparent electrode substrate includes a common electrode, microcapsule electronic ink and light guiding poles as light transmitting passages, all of which are formed on a first substrate. The TFT substrate comprises displaying electrodes, first TFTs for driving the displaying electrodes, second TFTs for detecting lights transmitting through the light guiding poles and for producing level signals, and third TFTs for reading the level signals and sending the level signals to a back-end processing system, all of which are formed on a second substrate. The light guiding poles are opposite to the second TFTs respectively.

Abstract: In the optical waveguide board, simultaneously with pattern formation of mirror members at arbitrary positions on a clad layer 11, guiding patterns 14 having convex shapes are formed respectively at arbitrary positions on peripheral parts of mirror patterns 13, and the mirror patterns 13 are worked into tapered shapes. Next, in a state that a mask member 100 having through holes at desired positions, and the guiding patterns 14 are guided by mating, a metal film is formed on surfaces of slope parts 22 of the mirror patterns and the guiding patterns 14. Furthermore, in a state that the guiding patterns 14 and the photomask 16 are guided, wiring core patterns 20 are formed on the clad layer 11 adjacent to the mirror patterns 13.

Abstract: This invention discloses methods and apparatus to form organic semiconductor transistors upon three-dimensionally formed insert devices. In some embodiments, the present invention includes incorporating the three-dimensional surfaces with organic semiconductor-based thin film transistors, electrical interconnects, and energization elements into an insert for incorporation into ophthalmic lenses. In some embodiments, the formed insert may be directly used as an ophthalmic device or incorporated into an ophthalmic device.

Abstract: A method for producing a semiconductor optical device includes the steps of forming first and second optical waveguides; forming a first resin layer on the first and the second optical waveguides; forming an opening in the first resin layer; forming a first electrode in the opening; forming a second resin layer on the first electrode and the first resin layer; forming a groove in the second resin layer on the first electrode; forming a second electrode on the second resin layer, a side surface of the groove, and the top surface of the first electrode; and forming a third electrode on the second electrode. The second and third electrodes have a region in which the second and third electrodes pass over the second optical waveguide, and, in the region, the first and second resin layers are disposed between the second electrode and the second optical waveguide.

Abstract: Several embodiments of light emitting diode packaging configurations including a substrate with a cavity are disclosed herein. In one embodiment, a cavity is formed on a substrate to contain an LED and phosphor layer. The substrate has a channel separating the substrate into a first portion containing the cavity and a second portion. A filler of encapsulant material or other electrically insulating material is molded in the channel. The first portion can serve as a cathode for the LED and the second portion can serve as the anode.

Abstract: Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate.

Abstract: A method of applying a conversion means to an optoelectronic semiconductor chip includes preparing the optoelectronic semiconductor chip having a main radiation face, preparing the conversion means, the conversion means being applied to a main carrier face of a carrier, arranging the conversion means such that it faces the main radiation face and has a spacing relative to the main radiation face, and releasing the conversion means from the carrier and applying the conversion means to the main radiation face by irradiation and heating of an absorber constituent of the conversion means and/or of a release layer located between the conversion means and the carrier with a pulsed laser radiation which passes through the carrier.

Abstract: Integrated upconversion devices capable of upconverting incident visible to short wavelength infrared photons to visible photons are disclosed. The device may include a quantum dot-based photodiode and a light-emitting diode. The device may further include a gain element such as a thin-film transistor.

Abstract: The present invention relates to a light-emitting diode (LED) and a method for manufacturing the same. The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.

Abstract: A light-receiving element includes a III-V group compound semiconductor substrate, a light-receiving layer having a type II multi-quantum well structure disposed on the substrate, and a type I wavelength region reduction means for reducing light in a wavelength region of type I absorption in the type II multi-quantum well structure disposed on a light incident surface or between the light incident surface and the light-receiving layer.

Abstract: An array substrate for a liquid crystal display (LCD) and manufacturing method thereof are provided. The array substrate for a liquid crystal display (LCD) includes: a substrate, including: a gate electrode, a pixel electrode, and a common electrode, a gate pad formed on the substrate, and connected to the gate electrode, a gate insulating layer formed on the gate pad, a first protective layer formed on the gate insulating layer, a second protective layer formed on the first protective layer, a first metal layer formed on the second protective layer, and connected to the gate pad through a first contact hole which exposes the gate pad, a third protective layer formed on the first metal layer and the second protective layer, and a second metal layer formed on the third protective layer, and connected to the first metal layer through a second contact hole which exposes the first metal layer.

Abstract: A donor substrate includes a base substrate; a light reflection layer on the base substrate and partially overlapping the base substrate; a light-to-heat conversion layer on the base substrate, and including a combination layer including an insulating material and a first metal material; and a transfer layer on the light-to-heat conversion layer. A ratio of the first metal material in the combination layer to the insulating material in the combination layer increases as a distance from the base substrate increases along a thickness direction of the light-to-heat conversion layer.

Abstract: Methods for bonding semiconductor wafers requiring the transfer of electrical and optical signals between the bonded wafers and across the bonding interface. The methods incorporate the formation of both electrical and optical interconnect vias within the wafer bonding interface to transfer electrical and optical signals between the bonded wafers. The electrical vias are formed using multiplicity of metal posts each comprised of multiple layers of metal that are interfused across the bonding surface. The optical vias are formed using multiplicity of optical waveguides each comprised of a dielectric material that interfuses across the bonding interface and having an index of refraction that is higher than the index of refraction of the dielectric intermediary bonding layer between the bonded wafers. The electrical and optical vias are interspersed across the bonding surface between the bonded wafers to enable uniform transfer of both electrical and optical signals between the bonded wafers.

Abstract: A method for manufacturing interdigitated back contact photovoltaic cells is disclosed. In one aspect, the method includes providing on a rear surface of a substrate a first doped layer of a first dopant type, and providing a dielectric masking layer overlaying it. Grooves are formed through the dielectric masking layer and first doped layer, extending into the substrate in a direction substantially orthogonal to the rear surface and extending in a lateral direction underneath the first doped layer at sides of the grooves. Directional doping is performed in a direction substantially orthogonal to the rear surface, thereby providing doped regions with dopants of a second dopant type at a bottom of the grooves. Dopant diffusion is performed to form at the rear side of the substrate one of the emitter regions and back surface field regions between the grooves and the other at the bottom of the grooves.

Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

Abstract: The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane.

Abstract: A method for manufacturing optoelectronic devices comprising the steps of: providing a common growth substrate; forming a light-emitting epitaxy structure on the common growth substrate; forming a stripping layer on the light-emitting epitaxy structure; forming a solar cell epitaxy structure on the stripping layer; forming an adhesive layer on the solar cell epitaxy structure; proving a solar cell permanent substrate on the adhesive layer; and removing the stripping layer to form a light-emitting device and a solar cell device separately.

Abstract: An image pickup device, wherein a part of the carriers overflowing from the photoelectric conversion unit for a period of photoelectrically generating and accumulating the carriers may be flowed into the floating diffusion region, and a pixel signal generating unit generating a pixel signal according to the carriers stored in the photoelectric conversion unit and the carriers having overflowed into the floating diffusion region, is provided. The expansion of a dynamic range and the improvement of an image quality can be provided by controlling a ratio of the carriers flowing into the floating diffusion region to the carriers overflowing from such a photoelectric conversion unit at high accuracy.