By Electromagnetic Irradiation (e.g., Electron, Laser, Etc.) Patents (Class 438/463)
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Patent number: 8802544Abstract: A method for manufacturing a chip constituted by a functional device formed on a substrate comprises a functional device forming step of forming the functional device on one main face of a sheet-like object to be processed made of silicon; a first modified region forming step of converging a laser light at the object so as to form a first modified region along the one main face of the object at a predetermined depth corresponding to the thickness of the substrate from the one main face; a second modified region forming step of converging the laser light at the object so as to form a second modified region extending such as to correspond to a side edge of the substrate as seen from the one main face on the one main face side in the object such that the second modified region joins with the first modified region along the thickness direction of the object; and an etching step of selectively advancing etching along the first and second modified regions after the first and second modified region forming steps soType: GrantFiled: July 19, 2011Date of Patent: August 12, 2014Assignee: Hamamatsu Photonics K.K.Inventors: Hideki Shimoi, Keisuke Araki
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Patent number: 8802543Abstract: A laser processing method which can highly accurately cut objects to be processed having various laminate structures is provided. An object to be processed comprising a substrate and a laminate part disposed on the front face of the substrate is irradiated with laser light L while a light-converging point P is positioned at least within the substrate, so as to form a modified region due to multiphoton absorption at least within the substrate, and cause the modified region to form a starting point region for cutting. When the object is cut along the starting point region for cutting, the object 1 can be cut with a high accuracy.Type: GrantFiled: November 18, 2013Date of Patent: August 12, 2014Assignee: Hamamatsu Photonics K.K.Inventors: Fumitsugu Fukuyo, Kenshi Fukumitsu
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Patent number: 8802545Abstract: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.Type: GrantFiled: March 5, 2012Date of Patent: August 12, 2014Assignee: Plasma-Therm LLCInventors: Chris Johnson, David Johnson, David Pays-Volard, Linnell Martinez, Russell Westerman, Gordon M. Grivna
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Publication number: 20140217577Abstract: A device includes a semiconductor chip including a first main face and a second main face, the second main face being the backside of the semiconductor chip. The second main face includes a first region and a second region, the second region being a peripheral region of the second main face. The device further includes a dielectric material arranged over the second region and an electrically conductive material arranged over the first region.Type: ApplicationFiled: February 4, 2013Publication date: August 7, 2014Applicant: Infineon Technologies AGInventor: Gunther Mackh
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Patent number: 8796114Abstract: A method for slicing a monocrystalline semiconductor layer (116) from a semiconductor single crystal (100) comprising: providing a semiconductor single crystal (100) having a uniform crystal structure; locally modifying the crystal structure within a separating plane (104) in the semiconductor single crystal (100) into an altered microstructure state by means of irradiation using a laser (106); and removing the modified separating plane (104) by means of selective etching.Type: GrantFiled: June 14, 2011Date of Patent: August 5, 2014Assignee: OSRAM Opto Semiconductors GmbHInventor: Ralph Wagner
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Patent number: 8796113Abstract: A processing method for a wafer on which a plurality of devices are formed and partitioned by scheduled division lines includes a dividing groove by irradiating a laser beam of a wavelength to which the wafer has absorbency along the scheduled division lines to form dividing grooves which are to be used as start points of division. An external force divides the wafer into individual devices. The dividing grooves are formed by irradiating a laser beam of a first energy which is comparatively low upon a selected scheduled division line to form a first dividing groove which is to be used as a start point of division, and irradiating another laser beam of a second energy which is higher than the first energy upon scheduled division lines other than the selected scheduled division line to form second dividing grooves which are to be used as start points of division.Type: GrantFiled: May 30, 2012Date of Patent: August 5, 2014Assignee: Disco CorporationInventor: Tomohiro Endo
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Patent number: 8796154Abstract: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.Type: GrantFiled: February 11, 2013Date of Patent: August 5, 2014Assignee: Plasma-Therm LLCInventors: Chris Johnson, David Johnson, David Pays-Volard, Linnell Martinez, Russell Westerman, Gordon M. Grivna
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Publication number: 20140213043Abstract: A method of radiatively scribing a substantially planar semiconductor substrate using a laser scribing apparatus, uses a laser scribing head configured and arranged to produce a two-dimensional array of laser beam spots to effect the scribing. In an embodiment, the spots of the array extend substantially parallel to X and Y directions in the plane of the substrate. In an embodiment, spots at a periphery in one or both directions of the array have a lower intensity than laser beams in a central portion of the array.Type: ApplicationFiled: January 27, 2014Publication date: July 31, 2014Applicant: Advanced Laser Separation International (ALSI) N.VInventor: Karel Maykel Richard Van der Stam
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Patent number: 8790997Abstract: While reliably cutting an object to be processed, the strength of the resulting chips is improved. An object to be processed 1 is irradiated with laser light L, so as to form modified regions 17, 27, 37, 47 extending along lines to cut 5 and aligning in the thickness direction in the object 1. Here, modified regions 17 are formed such that modified region formed parts 17a and modified region unformed parts 17b alternate along the lines, and modified regions 47 are formed such that modified region formed parts 47a and modified region unformed parts 47b alternate along the lines. This can inhibit formed modified regions 7 from lowering the strengths on the rear face 21 side and front face 3 side of chips obtained by cutting. On the other hand, modified regions 27, 37 located between the modified regions 17, 47 are formed continuously from one end side of the lines 5 to the other end side thereof, whereby the cuttability of the object 1 can be secured reliably.Type: GrantFiled: August 17, 2010Date of Patent: July 29, 2014Assignee: Hamamatsu Photonics K.K.Inventors: Aiko Nakagawa, Takeshi Sakamoto
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Patent number: 8785813Abstract: Various embodiments may be used for laser-based modification of target material of a workpiece while advantageously achieving improvements in processing throughput and/or quality. Embodiments of a method of processing may include focusing and directing laser pulses to a region of the workpiece at a pulse repetition rate sufficiently high so that material is efficiently removed from the region and a quantity of unwanted material within the region, proximate to the region, or both is reduced relative to a quantity obtainable at a lower repetition rate. Embodiments of an ultrashort pulse laser system may include a fiber amplifier or fiber laser. Various embodiments are suitable for at least one of dicing, cutting, scribing, and forming features on or within a semiconductor substrate. Workpiece materials may include metals, inorganic or organic dielectrics, or any material to be micromachined with femtosecond, picosecond, and/or nanosecond pulses.Type: GrantFiled: March 15, 2012Date of Patent: July 22, 2014Assignee: IMRA America, Inc.Inventors: Lawrence Shah, Gyu Cheon Cho, Jingzhou Xu
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Patent number: 8785332Abstract: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.Type: GrantFiled: February 11, 2013Date of Patent: July 22, 2014Assignee: Plasma-Therm LLCInventors: Chris Johnson, David Johnson, Linnell Martinez, David Pays-Volard, Rich Gauldin, Russell Westerman, Gordon M. Grivna
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Patent number: 8778118Abstract: A manufacturing method of laser processed parts in which at least a pressure-sensitive adhesive layer is provided on a base material as a pressure-sensitive adhesive sheet for laser processing, using a material having specified physical properties. This method comprises adhering the pressure-sensitive adhesive sheet for laser processing to the laser beam exit side of the work by way of the pressure-sensitive adhesive layer, processing the work by irradiating the work with a laser beam of within 2 times of the irradiation intensity for forming a through-hole in the work, at higher than the irradiation intensity of threshold for inducing ablation of the work, and peeling the pressure-sensitive adhesive sheet for laser processing from the work after the machining. Therefore, contamination of the work surface by decomposition products can be effectively suppressed, and laser processed parts can be manufactured easily and at high production efficiency.Type: GrantFiled: June 22, 2010Date of Patent: July 15, 2014Assignee: Nitto Denko CorporationInventors: Masakatsu Urairi, Atsushi Hino, Naoyuki Matsuo, Tomokazu Takahashi, Takeshi Matsumura, Syouji Yamamoto
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Patent number: 8778806Abstract: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.Type: GrantFiled: April 17, 2012Date of Patent: July 15, 2014Assignee: Plasma-Therm LLCInventors: Chris Johnson, David Johnson, David Pays-Volard, Linnell Martinez, Russell Westerman, Gordon M. Grivna
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Patent number: 8778780Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.Type: GrantFiled: October 11, 2006Date of Patent: July 15, 2014Assignee: SemiLEDS Optoelectronics Co., Ltd.Inventors: Trung-Tri Doan, Chen-Fu Chu, Hao-Chun Cheng, Feng-Hsu Fan
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Patent number: 8772133Abstract: The various aspects comprise methods and devices for processing a wafer. An aspect of this disclosure includes a wafer. The wafer comprises a plurality of die regions; a plurality of kerf regions between the plurality of die regions; and a metallization area on the plurality of die regions.Type: GrantFiled: June 11, 2012Date of Patent: July 8, 2014Assignee: Infineon Technologies AGInventors: Manfred Engelhardt, Martin Zgaga, Karl Adolf Mayer, Gudrun Stranzl
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Patent number: 8772138Abstract: A high voltage light emitting diode chip and its manufacturing method are provided. The high voltage light emitting diode chip can be manufactured by forming a plurality of light emitting diode units on a substrate and electrically connecting the light emitting diode units, wherein a trench with a width of about 0.5 ?m to about 7 ?m is present between every two adjacent light emitting diode units to isolate the light emitting diode units. The procedure for manufacturing the high voltage light emitting diode chip is simple and the high voltage light emitting diode chip that is produced can exhibit satisfying luminous efficiency.Type: GrantFiled: May 7, 2012Date of Patent: July 8, 2014Assignee: Walsin Lihwa CorporationInventors: Chih-Wei Yang, Ching-Hwa Chang Jen
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Patent number: 8765578Abstract: A method of edge protecting bonded semiconductor wafers. A second semiconductor wafer and a first semiconductor wafer are attached by a bonding layer/interface and the second semiconductor wafer undergoes a thinning process. As a part of the thinning process, a first protective layer is applied to the edges of the second and first semiconductor wafers. A third semiconductor wafer is attached to the second semiconductor wafer by a bonding layer/interface and the third semiconductor wafer undergoes a thinning process. As a part of the thinning process, a second protective layer is applied to the edges of the third semiconductor wafer and over the first protective layer. The first, second and third semiconductor wafers form a wafer stack. The wafer stack is diced into a plurality of 3D chips while maintaining the first and second protective layers.Type: GrantFiled: June 6, 2012Date of Patent: July 1, 2014Assignee: International Business Machines CorporationInventors: Douglas C. La Tulipe, Jr., Spyridon Skordas, Tuan A. Vo, Kevin R. Winstel
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Publication number: 20140179059Abstract: An integrated circuit method is provided with package-level connectivity, between internal electronic circuitry thereof and contact points on a package substrate thereof, without requiring top metal pads or bonding wires.Type: ApplicationFiled: February 28, 2014Publication date: June 26, 2014Applicant: MOSAID Technologies IncorporatedInventor: Hong Beom PYEON
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Publication number: 20140179084Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. For example, a method includes applying a protection tape to a wafer front side, the wafer having a dicing tape attached to the wafer backside. The dicing tape is removed from the wafer backside to expose a die attach film disposed between the wafer backside and the dicing tape. Alternatively, if no die attach film is initially disposed between the wafer backside and the dicing tape, a die attach film is applied to the wafer backside at this operation. A water soluble mask is applied to the wafer backside. Laser scribing is performed on the wafer backside to cut through the mask, the die attach film and the wafer, including all layers included within the front side and backside of the wafer. A plasma etch is performed to treat or clean surfaces of the wafer exposed by the laser scribing. A wafer backside cleaning is performed and a second dicing tape is applied to the wafer backside.Type: ApplicationFiled: December 3, 2013Publication date: June 26, 2014Inventors: Wei-Sheng Lei, Brad Eaton, Aparna Iyer, Saravjeet Singh, Madhava Rao Yalamanchili, Ajay Kumar
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Publication number: 20140179083Abstract: Embodiments of methods and systems for processing a semiconductor wafer are described. In one embodiment, a method for processing a semiconductor wafer involves performing laser stealth dicing on the semiconductor wafer to form a stealth dicing layer within the semiconductor wafer and after performing laser stealth dicing, cleaning the semiconductor wafer from a back-side surface of the semiconductor wafer with a blade to remove at least a portion of the stealth dicing layer. Other embodiments are also described.Type: ApplicationFiled: December 20, 2012Publication date: June 26, 2014Applicant: NXP B.V.Inventors: HARTMUT BUENNING, SASCHA MOELLER, MARTIN LAPKE, GUIDO ALBERMANN, THOMAS ROHLEDER
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Patent number: 8759951Abstract: The present invention provides a method for selectively transferring elements such as monocrystalline Si thin films or elements made of monocrystalline Si from a base substrate (100) onto an insulating substrate without the use of an intermediate substrate. The base substrate (first substrate) (100) in which the elements are formed is selectively irradiated with a laser having a multiphoton absorption wavelength. Thus, elements to be transferred out of the elements and corresponding thin films on the base substrate (100) are transferred onto a transfer destination substrate (second substrate) (200).Type: GrantFiled: October 18, 2010Date of Patent: June 24, 2014Assignee: Sharp Kabushiki KaishaInventor: Masahiro Mitani
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Patent number: 8759197Abstract: Methods of dicing substrates by both laser scribing and plasma etching. A method includes laser ablating material layers, the ablating leading with a first irradiance and following with a second irradiance, different than the first. An asymmetrically shaped beam having an asymmetrical spatial profile along the direction of travel, multiple passes of a beam adjusted to have different irradiance levels, and multiple laser beams having various irradiance levels may be utilized to ablate at least a mask with the first irradiance and expose the substrate with the second irradiance.Type: GrantFiled: June 15, 2011Date of Patent: June 24, 2014Assignee: Applied Materials, Inc.Inventor: James M. Holden
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Patent number: 8759948Abstract: An object to be processed 1 comprising a substrate 4 and a plurality of functional devices 15 formed on a front face 3 of the substrate 4 is irradiated with laser light L while locating a converging point P within the substrate 4, so as to form at least one row of a divided modified region 72, at least one row of a quality modified region 71 positioned between the divided modified region 72 and the front face 3 of the substrate 4, and at least one row of an HC modified region 73 positioned between the divided modified region 72 and a rear face 21 of the substrate 4 for one line to cut 5. Here, in a direction along the line to cut, a forming density of the divided modified region 72 is made lower than that of the quality modified region 71 and that of the HC modified region 73.Type: GrantFiled: February 1, 2013Date of Patent: June 24, 2014Assignee: Hamamatsu Photonics K.K.Inventors: Takeshi Sakamoto, Kenichi Muramatsu
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Patent number: 8753923Abstract: A wafer processing method of dividing a wafer along streets. The wafer processing method includes a protective tape attaching step of attaching a protective tape to the front side of the wafer, a modified layer forming step of holding the wafer through the protective tape on a chuck table of a laser processing apparatus under suction and next applying a laser beam having a transmission wavelength to the wafer from the back side of the wafer along the streets, thereby forming a modified layer inside the wafer along each street, and a wafer dividing step of canceling suction holding of the wafer by the chuck table and next applying an air pressure to the wafer now placed on the holding surface in the condition where horizontal movement of the wafer is limited, thereby dividing the wafer along each street where the modified layer is formed, thus obtaining individual devices.Type: GrantFiled: March 7, 2013Date of Patent: June 17, 2014Assignee: Disco CorporationInventors: Satoshi Kobayashi, Jinyan Zhao
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Patent number: 8749077Abstract: An embodiment 3DIC device includes a semiconductor chip, a die, and a polymer. The semiconductor chip includes a semiconductor substrate, wherein the semiconductor substrate comprises a first edge, and a low-k dielectric layer over the semiconductor substrate. The die is disposed over and bonded to the semiconductor chip. The polymer is molded onto the semiconductor chip and the die. The polymer includes a portion level with the low-k dielectric layer, wherein the portion of the polymer comprises a second edge vertically aligned to the first edge of the semiconductor substrate and a third edge contacting the low-k dielectric layer, wherein the second and the third edges are opposite edges of the portion of the polymer.Type: GrantFiled: July 23, 2013Date of Patent: June 10, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Wei Wu, Szu Wei Lu, Jing-Cheng Lin, Shin-Puu Jeng, Chen-Hua Yu
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Patent number: 8748236Abstract: A method for manufacturing a semiconductor device includes irradiating light to an effective region of a semiconductor substrate. A wavelength of the light is a wavelength adapted so that light absorptance of the semiconductor substrate increases if an intensity of the light increases. The light is irradiated so that a focus point of the light is made within the semiconductor substrate in the irradiating.Type: GrantFiled: November 10, 2010Date of Patent: June 10, 2014Assignee: Toyota Jidosha Kabushiki KaishaInventor: Atsushi Tanida
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Publication number: 20140154871Abstract: A method for manufacturing a semiconductor device is provided. The method contains steps of providing the semiconductor device including a working area; directing a medium flow onto the working area; configuring a lens in contact with the medium flow; and directing a laser beam to the working area through the lens and the medium flow. A laser processing for manufacturing a semiconductor device is also provided.Type: ApplicationFiled: November 30, 2012Publication date: June 5, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Ling Hwang, Bor-Ping Jang, Yi-Li Hsiao, Hsin-Hung Liao, Chung-Shi Liu
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Publication number: 20140154831Abstract: In different embodiments, a method is provided for processing at least one crystalline Silicon-wafer or a Solar-cell wafer. The method may include: a movement of the wafer with respect to a laser producing a laser beam; and therefore the formation of a laser channel in the wafer by means of a laser beam, wherein a thermal budget applied on the wafer by means of the laser beam is reduced in the peripheral region of the wafer, wherein the peripheral region includes a wafer edge, through which the laser beam exits the wafer after formation of the laser channel.Type: ApplicationFiled: December 3, 2013Publication date: June 5, 2014Applicant: SolarWorld Innovations GmbHInventors: Martin Kutzer, Joachim Koenig, Matthias Richter
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Publication number: 20140145294Abstract: A method is provided for separation of a wafer into individual ICs. Channels are formed in the one or more metallization layers on a front-side of the wafer along respective lanes. The lanes are located between the ICs and extend between a front-side of the metallization layers and a backside of the substrate. A backside of the substrate is thinned, and laser pulses are applied via the backside of the substrate to change the crystalline structure of the silicon substrate along the lanes. The plurality of portions in the silicon substrate and the channels are configured to propagate cracks in the silicon substrate along the lanes during expansion of the IC wafer. The channels assist to mitigate propagation of cracks outside of the lanes in the metallization layers during expansion of the IC wafer.Type: ApplicationFiled: November 28, 2012Publication date: May 29, 2014Applicant: NXP B.V.Inventors: Sascha Moeller, Martin Lapke
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Patent number: 8728923Abstract: A manufacturing method of a semiconductor device having an ohmic electrode is disclosed. The manufacturing method includes: forming a metal thin film on a rear surface of a semiconductor substrate; forming an ohmic electrode by laser annealing by irradiating the metal thin film with laser beam; and dicing the semiconductor substrate into chips by cutting at a dicing region of the semiconductor substrate. In forming the ohmic electrode, laser irradiation of the metal thin film is performed on a chip-by-chip basis while the dicing region is not being irradiated with the laser beam.Type: GrantFiled: September 25, 2012Date of Patent: May 20, 2014Assignee: DENSO CORPORATIONInventors: Jun Kawai, Tetsuji Kondou, Kazuhiko Sugiura, Nobuyuki Kato
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Patent number: 8728849Abstract: A method of laser cutting through dissimilar materials separated by a metal foil. A material stack includes a semiconductor layer or film, with a metal foil layer attached to the back surface. The metal foil layer is attached to an insulative support material layer. A laser parameter is selected and optimized for the material stack. A laser beam creates a kerf in the material stack down to the metal foil layer. The laser beam removes metal through the kerf primarily by gasification rather than melting. Kerf formation continues after optimization of the laser parameter for removal of material from the remaining layers. A debris field resulting from the laser cutting of the metal layer is reduced and/or a portion of the debris is removed in an assisted manner as the beam cuts. The materials are diced by cutting the kerf through all materials.Type: GrantFiled: August 31, 2011Date of Patent: May 20, 2014Assignee: Alta Devices, Inc.Inventors: Laila Mattos, Daniel G. Patterson
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Patent number: 8728916Abstract: A method for manufacturing a semiconductor element of the present invention, has: a laser irradiation step of focusing a pulsed laser beam inside of a substrate constituting a wafer, thereby forming a plurality of isolated processed portions along an intended dividing line inside of the substrate, and creating a fissure that runs from the processed portions at least to the surface of the substrate and links adjacent processed portions; and a wafer division step of dividing the wafer along the intended dividing line.Type: GrantFiled: February 4, 2010Date of Patent: May 20, 2014Assignee: Nichia CorporationInventor: Hiroaki Tamemoto
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Patent number: 8728915Abstract: A wafer laser-marking method is provided. First, a wafer having a first surface (an active surface) and a second surface (a back surface) opposite to each other is provided. Next, the wafer is thinned. Then, the thinned wafer is fixed on a non-UV tape such that the second surface of the wafer is attached to the tape. Finally, the laser marking step is performed, such that a laser light penetrates the non-UV tape and marks a pattern on the second surface of the wafer. According to the laser-marking method of the embodiment, the pattern is formed by the non-UV residuals left on the second surface of the wafer, and the components of the glue residuals at least include elements of silicon and carbon.Type: GrantFiled: September 6, 2011Date of Patent: May 20, 2014Assignee: Advanced Semiconductor Engineering, Inc.Inventors: Yu-Pin Tsai, Cheng-I Huang, Yao-Hui Hu
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Patent number: 8728914Abstract: Fractures (17a, 17b) are generated from modified regions (7a, 7b) to front and rear faces (12a, 12b) of a object to be processed (1), respectively, while an unmodified region (2) is interposed between the modified regions (7a, 7b). This can prevent fractures from continuously advancing in the thickness direction of a silicon substrate (12) when forming a plurality of rows of modified regions (7). By generating a stress in the object (1), the fractures (17a, 17b) are connected to each other in the unmodified region (2), so as to cut the object (1). This can prevent fractures from meandering in the rear face (12b) of the object (1) and so forth, whereby the object (1) can be cut accurately along a line to cut the object (5).Type: GrantFiled: January 27, 2010Date of Patent: May 20, 2014Assignee: Hamamatsu Photonics K.K.Inventors: Takeshi Sakamoto, Aiko Nakagawa
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Publication number: 20140131876Abstract: The present invention provides a semiconductor device, a semiconductor package and a semiconductor process. The semiconductor process includes the following steps: (a) providing a semiconductor wafer having a first surface, a second surface and a passivation layer; (b) applying a first laser on the passivation layer to remove a part of the passivation layer and expose a part of the semiconductor wafer; (c) applying a second laser, wherein the second laser passes through the exposed semiconductor wafer and focuses at an interior of the semiconductor wafer; and (d) applying a lateral force to the semiconductor wafer. Whereby, the cutting quality is ensured.Type: ApplicationFiled: November 14, 2012Publication date: May 15, 2014Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.Inventors: Pei Hsing Hua, Hui-Shan Chang
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Patent number: 8722516Abstract: A plurality of modified parts are formed at a first formation pitch for a line arranged along the M-plane of a single-crystal sapphire substrate to construct a modified region and cause a fracture occurring from the modified region to reach a principal surface of the single-crystal sapphire substrate. A plurality of modified parts are formed at a second formation pitch narrower than the first formation pitch for a line arranged along the A-plane of the single-crystal sapphire substrate to construct a modified region and cause a fracture occurring from the modified region to reach the principal surface of the single-crystal sapphire substrate. Along the lines, a knife edge is pressed against a wafer from the side of the single-crystal sapphire substrate opposite from the principal surface of the single-crystal sapphire substrate where the fractures have reached, to cut the wafer along the lines.Type: GrantFiled: September 15, 2011Date of Patent: May 13, 2014Assignee: Hamamatsu Photonics K.K.Inventors: Takeshi Yamada, Masaharu Hoshikawa, Yasunaga Nara
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Patent number: 8716110Abstract: A laser processing method comprising a step of irradiating an object to be processed with laser light elliptically polarized with an ellipticity of other than 1 such that a light-converging point of the laser light is located within the object along the major axis of an ellipse indicative of the elliptical polarization of laser light, along a line which the object is intended to be cut, to form a modified region caused by multiphoton absorption within the object, along the line which the object is intended to be cut.Type: GrantFiled: August 28, 2012Date of Patent: May 6, 2014Assignee: Hamamatsu Photonics K.K.Inventors: Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama, Toshimitsu Wakuda
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Publication number: 20140120699Abstract: A fabrication method for dicing semiconductor wafers using laser cutting techniques, which can effectively prevent the devices on semiconductor die units from the phenomenon of etching undercut caused by the sequential steps after laser cutting, comprises following steps: covering the wafer surface with a protection layer; dicing the wafer by laser and separating the die units from each other; removing the laser cutting residues on the devices on the die units via wet etching by an acidic water solution; removing the protection layer by a non-acidic water solution and cleaning the devices on the die units. The selection of materials for the protection layer must consider the following factors: where (1) the materials for the protection layer must have relatively good properties for adhering and covering on the wafer; (2) the materials for the protection layer must be corrosion-resistant to the acidic water solution for etching residues.Type: ApplicationFiled: January 3, 2014Publication date: May 1, 2014Applicant: WIN Semiconductors Corp.Inventors: Chang-Huang HUA, Ping Wei CHEN, Kevin HUANG, Benny HO, Chen-Che CHIN
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Publication number: 20140117505Abstract: A method for manufacturing a plurality of chips comprises the step of providing a wafer comprising a plurality of chip areas separated by one or more dicing lines, wherein the chip areas are arranged on a first main surface, the step of providing a laser absorption layer on a second main surface opposite to the first main surface and the step of providing a backside metal stack on the laser absorption layer. After that a laser light is applied to the laser absorption layer along the dicing lines before the chips are singulated along the dicing lines by using stealth dicing.Type: ApplicationFiled: October 31, 2012Publication date: May 1, 2014Applicant: INFINEON TECHNOLOGIES AGInventors: Gunther Mackh, Adolf Koller
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Patent number: 8710458Abstract: A method of forming an integrated circuit includes providing a wafer, and a tape adhered to the wafer, wherein the tape has a main surface perpendicular to a first direction. The tape is exposed to a light to cause the tape to lose adhesion. In the step of exposing the tape, the wafer and the tape are rotated, and/or the light is tilt projected onto the tape, wherein a main projecting direction of the light and the first direction form a tilt angle greater than zero degrees and less than 90 degrees.Type: GrantFiled: October 19, 2010Date of Patent: April 29, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Hsiang Hu, Chen-Fa Lu, Chung-Shi Liu
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Patent number: 8709916Abstract: A laser processing method is disclosed, comprising the steps of: directing a laser beam to a workpiece; and effecting a relative motion between the laser beam and the workpiece. In particular, the step of directing the laser beam to the workpiece comprises focusing the laser beam within the workpiece until an internal damage forms within the workpiece and a crack propagates from the internal damage to at least one surface of the workpiece to form a surface crack on the workpiece. Further, the step of effecting the relative motion between the laser beam and the workpiece is such that the surface crack on the workpiece propagates along a line of separation on the workpiece. A laser processing apparatus is also disclosed.Type: GrantFiled: July 5, 2012Date of Patent: April 29, 2014Assignee: ASM Technology Singapore Pte LtdInventors: Chi Hang Kwok, Chi Wah Cheng, Lap Kei Chow
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Patent number: 8709904Abstract: There is provided a method of producing a semiconductor wafer by thermally processing a base wafer having a portion to be thermally processed that is to be thermally processed. The method comprises a step of providing, on the base wafer, a portion to be heated that generates heat through absorption of an electromagnetic wave and selectively heats the portion to be thermally processed, a step of applying an electromagnetic wave to the base wafer, and a step of lowering the lattice defect density of the portion to be thermally processed, by means of the heat generated by the portion to be heated through the absorption of the electromagnetic wave.Type: GrantFiled: November 26, 2009Date of Patent: April 29, 2014Assignee: Sumitomo Chemical Company, LimitedInventors: Tomoyuki Takada, Masahiko Hata, Hisashi Yamada
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Patent number: 8703582Abstract: An element-group formation substrate (20) having plural semiconductor light emitting elements (21) formed on a substrate front surface (11a) is sequentially irradiated with a laser beam (64) having a first output from a substrate back surface (11b) side in the y direction, and the laser beam (64) is sequentially collected to a part having a first depth D1 from the substrate back surface (11b), thereby forming a first modified region L1. The substrate (20) having the first modified region L1 formed therein is sequentially irradiated with the laser beam (64) having a third output (<the first output) from the substrate back surface 11b side in the y direction, and the laser beam (64) is sequentially collected to a part having a third depth D3 from the substrate back surface (11b) shallower than the first depth D1, thereby forming a third modified region L3.Type: GrantFiled: June 14, 2011Date of Patent: April 22, 2014Assignee: Toyoda Gosei Co., Ltd.Inventor: Yoshinori Abe
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Patent number: 8703581Abstract: Methods of dicing substrates having a plurality of ICs. A method includes forming a mask comprising a water soluble material layer over the semiconductor substrate. The mask is patterned with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then etched through the gaps in the patterned mask to singulate the IC and the water soluble material layer washed off.Type: GrantFiled: June 15, 2011Date of Patent: April 22, 2014Assignee: Applied Materials, Inc.Inventors: Wei-Sheng Lei, Saravjeet Singh, Madhava Rao Yalamanchili, Brad Eaton, Ajay Kumar
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Publication number: 20140106545Abstract: During the performance of a laser processing step of applying a laser beam to a wafer to form modified layers inside the wafer respectively along division lines, a predetermined one of the modified layers already formed is imaged by a camera from the back side of the wafer with predetermined timing, and a positional deviation of the predetermined modified layer from the corresponding division line is detected to calculate a correction value. Then, the correction value is added to data on applied position of the laser beam to thereby make the applied position of the laser beam coincide with each division line. Accordingly, a positional deviation of the modified layer to be formed after this correction from each division line can be suppressed.Type: ApplicationFiled: October 8, 2013Publication date: April 17, 2014Applicant: Disco CorporationInventors: Shigefumi Okada, Nobumori Ogoshi
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Publication number: 20140099777Abstract: In one embodiment, a method of forming a semiconductor device comprises forming a groove on and/or over a first side of a substrate. A dicing layer is formed from a second side of the substrate using a laser process. The second side is opposite the first side. The dicing layer is disposed under the groove within the substrate. The substrate is singulated through the dicing layer.Type: ApplicationFiled: October 9, 2012Publication date: April 10, 2014Applicant: INFINEON TECHNOLOGIES AGInventors: Gunther Mackh, Maria Heidenblut, Adolf Koller, Anatoly Sotnikov
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Patent number: 8691702Abstract: The present invention provides a method for plasma processing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; loading a work piece onto the work piece support, the work piece having a support film, a frame and the substrate; providing a cover ring above the work piece, the cover ring having at least one perforated region, and at least one non-perforated region; generating a plasma using the plasma source; and processing the work piece using the generated plasma.Type: GrantFiled: March 14, 2013Date of Patent: April 8, 2014Assignee: Plasma-Therm LLCInventors: Dwarakanath Geerpuram, David Pays-Volard, Linnell Martinez, Chris Johnson, David Johnson, Russell Westerman
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Publication number: 20140094019Abstract: A wafer processing method of dividing a wafer along a plurality of crossing streets formed on the wafer to obtain individual chips. The wafer processing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the wafer along each street to thereby form a modified layer inside the wafer and a dividing step of applying an external force to the wafer to thereby divide the wafer into the individual chips along each street with the modified layer functioning as a division start point. In the modified layer forming step, the modified layer is formed at each intersection of the crossing streets at a height where cracking can be avoided on the corner edges of each chip obtained by dividing the wafer.Type: ApplicationFiled: September 30, 2013Publication date: April 3, 2014Applicant: Disco CorporationInventor: Kenji Furuta
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Publication number: 20140094018Abstract: The present invention provides a method for dicing a substrate with back metal, the method comprising the following steps. The substrate is provided with a first surface and a second surface wherein the second surface is opposed to the first surface. A mask layer is provided on the first surface of the substrate and a thin film layer is provided on the second surface of the substrate. The first surface of the substrate is diced through the mask layer to expose the thin film layer on the second surface of the substrate. A fluid from a fluid jet is applied to the thin film layer on the second surface of the substrate after the thin film layer has been exposed by the dicing step.Type: ApplicationFiled: September 23, 2013Publication date: April 3, 2014Applicant: PLASMA-THERM, LLCInventors: Peter Falvo, Linnell Martinez, David Pays-Volard, Rich Gauldin, Russell Westerman
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Publication number: 20140094020Abstract: Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the deterioration of electrical characteristics. A p-type collector region is provided on a surface layer of a backside surface of an n-type drift region. A p+-type isolation layer for obtaining reverse blocking capability is provided at the end of an element. In addition, a concave portion is provided so as to extend from the backside surface of the n-type drift region to the p+-type isolation layer. A p-type region is provided and is electrically connected to the p+-type isolation layer. The p+-type isolation layer is provided so as to include a cleavage plane having the boundary between the bottom and the side wall of the concave portion as one side.Type: ApplicationFiled: December 4, 2013Publication date: April 3, 2014Applicant: FUJI ELECTRIC CO., LTD.Inventors: Hiroki WAKIMOTO, Kenichi Iguchi, Koh Yoshikawa, Tsunehiro Nakajima, Shunsuke Tanaka, Masaaki Ogino