Abstract: The present disclosure provides systems and methods for producing a volume of substantially all armchair nanotubes of a preselected chirality for fabricating yarn consisting of substantially all metallic conducting armchair tubes. The systems and methods can be used for the synthesis of (10,10), (11,11), and (12,12) metallic armchair carbon nanotubes and potentially other chiralities. The elements of the present disclosure include: (i) a carbon source that provides substantial numbers of ethylene and acetylene radicals in combination with a high population of ethylene groups and a small amount of methane, (ii) a hydrogen to carbon ratio sufficient to “passivate” all other chiral growth sites to a higher degree than armchair growth sites, and (iii) a CVD process that can be tuned to create a well-controlled population of catalyst with tight diameter distribution with sparse modal distribution that falls within a range of the desired single wall diameters.

Abstract: A method includes depositing a layer of alumina over a silicon substrate, providing a patterned photoresist over the layer of alumina, providing an iron catalyst layer over the patterned photoresist, providing the iron catalyst layer over an exposed portion of the alumina, providing a first iron catalyst site over a first portion of the alumina, providing a second iron catalyst site over a second portion of the alumina, growing a first carbon nanotube on the first iron catalyst site, growing a second carbon nanotube on the second iron catalyst site, infiltrating the first carbon nanotube and the second carbon nanotube with carbon, and cooling both the first carbon nanotube and the second carbon nanotube. The infiltrating strengthens the first carbon nanotube and the second carbon nanotube to not delaminate from the substrate when the first carbon nanotube and the second carbon nanotube are cooled.

Abstract: The present invention relates to a method of reproducing at least one single-walled carbon nanotube (3) having predefined electronic properties or a plurality of single-walled carbon nanotube (3) having the same electronic properties. A dispersion (2) is produced for this purpose and carbon nanotubes (3) contained in the dispersion are processed into fragments (6) by energy input. These fragments (6) are applied to and oriented on a carrier (7). The fragments (6) are subsequently extended by chemical vapor deposition and the originally present carbon nanotubes (3) are thus reproduced.

Abstract: An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 ???Mg?170 ? may be satisfied, ?Mg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

Abstract: The disclosure relates to a method for manufacturing a planarized etch-stop layer, ESL, for a hydrofluoric acid, HF, vapor phase etching process. The method includes providing a first planarized layer on top of a surface of a substrate, the first planarized layer having a patterned and structured metallic material and a filling material. The method further includes depositing on top of the first planarized layer the planarized ESL of an ESL material with low HF etch rate, wherein the planarized ESL has a low surface roughness and a thickness of less than 150 nm, in particular of less than 100 nm.

Abstract: The disclosure relates to a method for manufacturing a planarized etch-stop layer, ESL, for a hydrofluoric acid, HF, vapor phase etching process. The method includes providing a first planarized layer on top of a surface of a substrate, the first planarized layer having a patterned and structured metallic material and a filling material. The method further includes depositing on top of the first planarized layer the planarized ESL of an ESL material with low HF etch rate, wherein the planarized ESL has a low surface roughness and a thickness of less than 150 nm, in particular of less than 100 nm.

Abstract: A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a first dielectric layer formed over a substrate, and a first conductive layer formed in the first dielectric layer. The NEMS device structure includes a second dielectric layer formed over the first dielectric layer, and a first supporting electrode a second supporting electrode and a beam structure formed in the second dielectric layer. The beam structure is formed between the first supporting electrode and the second supporting electrode, and the beam structure has a T-shaped structure. The NEMS device structure includes a first through hole formed between the first supporting electrode and the beam structure, and a second through hole formed between the second supporting electrode and the beam structure.

Abstract: A thermal humidity measuring device includes first and second heating elements, and is capable of obtaining a plurality of measurement values (measured values) by effectively utilizing each of the heating elements, which includes measuring humidity by the first heating element. A thermal humidity measuring device includes a first bridge circuit that includes a first heating element that senses humidity, and a second bridge circuit that includes a second heating element that heats air around the first heating element. In the thermal humidity measuring device, a first output signal is extracted from the first bridge circuit, and the humidity is sensed. A second output signal is extracted from the second bridge circuit, and the second output signal includes information relating to at least any one of pressure, an air flow rate, and air temperature.

Abstract: The invention relates to a measurement device comprising a suspended semiconductor wire, a first control circuit designed to apply and/or read a first electrical signal between first and second ends of the suspended semiconductor wire and a second control circuit designed to apply and/or read a second electrical signal between first and second intermediate nodes of the suspended semiconductor wire.

Abstract: Techniques are disclosed for forming group III material-nitride (III-N) microelectromechanical systems (MEMS) structures on a group IV substrate, such as a silicon, silicon germanium, or germanium substrate. In some cases, the techniques include forming a III-N layer on the substrate and optionally on shallow trench isolation (STI) material, and then releasing the III-N layer by etching to form a free portion of the III-N layer suspended over the substrate. The techniques may include, for example, using a wet etch process that selectively etches the substrate and/or STI material, but does not etch the III-N material (or etches the III-N material at a substantially slower rate). Piezoresistive elements can be formed on the III-N layer to, for example, detect vibrations or deflection in the free/suspended portion of the III-N layer. Accordingly, MEMS sensors can be formed using the techniques, such as accelerometers, gyroscopes, and pressure sensors, for example.

Abstract: A method for manufacturing a MEMS element, including the following: forming a least one stationary weight element and at least one moving weight element in the MEMS element, and positioning at least one fixing element at the stationary weight element and at the moving weight element, the fixing element being formed so as to be able to be severed.

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

Abstract: A semiconducting microbolometer sensor for detecting electromagnetic waves in the medium wavelength infrared (MWIR) and long-wavelength infrared (LWIR) is provided. A preferred embodiment provides a substrate layer, a bottom and top support structure with a strut-based mesh design, a meandered electrode layer that follows the top support structure design, a bolometer sensing material with a high TCR, and a disk-shaped absorber on top of the sensing material to maximize the heat flux absorption on the sensor. The bottom support of the sensor suspends the top support mesh, creating an air cavity. This air cavity along with the strut based mesh design and optimized thickness, dimension and shape of the layers contributed towards minimizing the thermal conductance of microbolometer and hence improved the figures of merits—responsivity, detectivity, noise equivalent power and noise equivalent temperature difference of microbolometer.

Abstract: An electronic device and methods including a switch formed in a chip package are shown. An electronic device and methods including a switch formed in a polymer based dielectric are shown. Examples of switches shown include microelectromechanical system (MEMS) structures, such as cantilever switches and/or shunt switches.

Abstract: A device may comprise a substrate formed of a first semiconductor material and a trench formed in the substrate. A second semiconductor material may be formed in the trench. The second semiconductor material may have first and second portions that are isolated with respect to one another and that are isolated with respect to the first semiconductor material.

Abstract: A capacitive microelectromechanical systems (MEMS) sensor is provided, having conductive coatings on opposing surfaces of capacitive structures. The capacitive structures may be formed of silicon, and the conductive coating is formed of tungsten in some embodiments. The structure is formed in some embodiments by first releasing the silicon structures and then selectively coating them in the conductive material. In some embodiments, the coating may result in encapsulating the capacitive structures.

Abstract: A method for fabricating a semiconductor device involves providing a semiconductor substrate, forming an oxide layer in the semiconductor substrate, forming a transistor device over the oxide layer, removing at least part of a backside of the semiconductor substrate, applying a sacrificial material below the oxide layer, covering the sacrificial material with an interface material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.

Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity (P) and a top surface; forming a first interaction region having a second type of conductivity (N), opposite to the first type of conductivity (P), in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity (N), so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.

Abstract: A method for forming a precision resistor or an e-fuse structure where tungsten silicon is used. The tungsten silicon layer is modified by implanting nitrogen into the structure.

Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor substrate including a substrate and a multilayer film having a step-shaped portion on the substrate; forming a protective layer covering the step-shaped portion of the multilayer film; forming a capping layer having a plurality of steps on the protective layer covering the semiconductor substrate; and removing at least one layer of the multilayer film to form a cavity that is defined by the capping layer and a remaining multilayer film that has the at least one layer removed. The thus formed semiconductor device does not have cracks in the steps of the capping layer when performing an etch process, thereby improving the performance of the semiconductor device.

Abstract: A simplified MEMS fabrication process and MEMS device is provided that allows for cheaper and lighter-weight MEMS devices to be fabricated. The process comprises etching a plurality of holes or other feature patterns into a MEMS device, and then etching away the underlying wafer such that, after the etching process, the MEMS device is the required thickness and the individual die are separated, avoiding the extra steps of wafer thinning and die dicing. By etching trenches into the substrate wafer and filling them with a MEMS base material, sophisticated taller MEMS devices with larger force may be made.

Abstract: A device includes a carrier having a plurality of cavities, a micro-electro-mechanical system (MEMS) substrate bonded on the carrier, wherein the MEMS substrate comprises a shielding layer on the carrier and coupled to ground, a plurality of vias coupled between the shielding layer and a bottom electrode of the MEMS substrate and a moving element over the bottom electrode and a semiconductor substrate bonded on the MEMS substrate, wherein the semiconductor substrate comprises a top electrode, and wherein the moving element is between the top electrode and the bottom electrode.

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED comprises: forming micro-LEDs on a laser-transparent original substrate, wherein the micro-LEDs are lateral micro-LEDs whose P electrodes and N electrodes are located on one side; bringing the P electrodes and N electrodes of the lateral micro-LEDs into contact with pads preset on a receiving substrate; and irradiating the original substrate with laser from the original substrate side to lift-off the lateral micro-LEDs from the original substrate. A technical effect of using lateral micro-LEDs lies in that the processing for N metal electrode after the micro-LED transfer can be omitted.

Abstract: A tap-scan bridge damage detection system comprises: a mobile cart (1) capable of moving on a to-be-detected bridge; a tap subsystem (2) mounted on the mobile cart (1) and used for applying a tap load to the to-be-detected bridge; a signal acquisition subsystem (3) mounted on the mobile cart and used for acquiring a response signal transferred from the to-be-detected bridge to the mobile cart; and a signal processing apparatus (4) connected to the signal acquisition subsystem (3) and used for receiving and processing a signal acquired by the signal acquisition subsystem (3), and outputting the bridge damage information processed result. The tap-scan bridge damage detection system can detect bridge damage in a simple, convenient, efficient and accurate manner.

Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a recess in a first substrate and forming a dielectric layer on the first substrate and in the recess. The method also includes forming a second substrate on the dielectric layer and etching a portion of the second substrate to form a MEMS structure. The MEMS structure has a plurality of openings. The method further includes etching a portion of the dielectric layer to form a cavity below the openings.

Abstract: According to various embodiments, a carrier may be provided, the carrier including: a hollow chamber spaced apart from a surface of the carrier; a trench structure extending from the surface of the carrier to the hollow chamber and laterally surrounding a first region of the carrier, the trench structure including one or more trenches extending from the surface of the carrier to the hollow chamber, and one or more support structures intersecting the one or more trenches and connecting the first region of the carrier with a second region of the carrier outside the trench structure, wherein the one or more support structures including an electrically insulating material.

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

Abstract: A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a substrate and an interconnect structure formed over the substrate. The NEMS device structure includes a dielectric layer formed over the interconnect structure and a beam structure formed in and over the dielectric layer. The beam structure includes a fixed portion and a moveable portion, the fixed portion is extended vertically, and the movable portion is extended horizontally. The NEMS device structure includes a cap structure formed over the dielectric layer and the beam structure and a cavity formed between the beam structure and the cap structure.

Abstract: The electrostatic sensors of bridge or cantilever type with multiple electrodes, the electrostatic sensors of comb type and piezoelectric sensors are used for the single molecule detection of ligands. The electrical driving of sensors is separated in some cases from the sensing for increased sensitivity. The large arrays of sensors with individual or common sensing circuits are employed to further improve detection sensitivity. The fabrication of the sensors, their functionalization for detection of many chemical and biological species and electrical circuitry, packaging, microfluidic subsystem and the system architecture are also disclosed. The individual, specific sensing of single species or simultaneous detection of multiple species is realized. The freeze drying or critical point drying after exposure of sensors to ligands present in liquids and detection in reduced pressure or vacuum is employed for increased sensitivity, down to the single molecule.

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Abstract: A method of manufacturing a touch panel, the method including forming electrode patterns; forming insulating patterns on the electrode patterns; forming a sacrificial layer on the electrode patterns and insulating patterns such that the sacrificial layer includes openings exposing portions of the insulating patterns; forming a conductive layer on the sacrificial layer and in each of the openings; and removing the sacrificial layer to form bridge patterns corresponding to the openings, wherein the sacrificial layer includes a first layer including first openings therein that expose portions of the insulating patterns; and a second layer including second openings therein that expose portions of the insulating patterns, the second layer having a thickness that is larger than a thickness of the first layer.

Abstract: Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.

Abstract: A non-volatile memory device and a method of manufacturing the same are provided. The device includes a substrate including a cell region and a peripheral region, a gate pattern formed over the substrate in the peripheral region, a multilayered structure formed over the gate pattern in the peripheral region, the multilayered structure including interlayer insulating layers and material layers for sacrificial layers, and a capping layer formed between the gate pattern and the multilayered structure in the peripheral region to cover the substrate, the capping layer configured to prevent diffusion of impurities from the material layers for the sacrificial layers into the substrate in the peripheral region.

Abstract: The invention relates to an acceleration sensor, comprising a substrate having a substrate surface and a sample mass that is movable relative to the substrate in a first direction (x) parallel to the substrate surface. The sample mass has a comb-like electrode that is movable together with the sample mass and has a plurality of teeth, which extend in the first direction (x). The acceleration sensor further comprises a counter-electrode fixedly connected to the substrate, which counter-electrode has a fixed comb-like electrode and wherein said fixed comb-like electrode has a plurality of teeth which extend in a direction opposite to the first direction (x). The teeth of the movable comb-like electrode engage with the teeth of the fixed comb-like electrode. The acceleration sensor further comprises a shielding electrode fixedly connected to the substrate and which is suitable for increasing a pneumatic damping of the sample mass during a deflection movement of the sample mass.

Abstract: A simplified MEMS fabrication process and MEMS device is provided that allows for cheaper and lighter-weight MEMS devices to be fabricated. The process comprises etching a plurality of holes or other feature patterns into a MEMS device, and then etching away the underlying wafer such that, after the etching process, the MEMS device is the required thickness and the individual die are separated, avoiding the extra steps of wafer thinning and die dicing. By etching trenches into the substrate wafer and filling them with a MEMS base material, sophisticated taller MEMS devices with larger force may be made.

Abstract: The present disclosure provides a device having a doped active region disposed in a substrate. The doped active region having an elongate shape and extends in a first direction. The device also includes a plurality of first metal gates disposed over the active region such that the first metal gates each extend in a second direction different from the first direction. The plurality of first metal gates includes an outer-most first metal gate having a greater dimension measured in the second direction than the rest of the first metal gates. The device further includes a plurality of second metal gates disposed over the substrate but not over the doped active region. The second metal gates contain different materials than the first metal gates. The second metal gates each extend in the second direction and form a plurality of respective N/P boundaries with the first metal gates.

Abstract: A method of forming trench electrode structures includes forming a first dielectric layer on a semiconductor substrate, forming a second layer above the first dielectric layer and forming an opening which extends through the second layer and the first dielectric layer to the semiconductor substrate such that part of the semiconductor substrate is uncovered. The method further comprises forming an epitaxial layer on the uncovered part of the semiconductor substrate, removing the second layer after forming the epitaxial layer and filling an open space formed by removing the second layer with an electrically conductive material. The electrically conductive material forms an electrode which is laterally surrounded by the epitaxial layer.

Abstract: An electronic part includes a bottom portion of a cavity that has an oscillation device, a ceiling portion so disposed that it faces the bottom portion via the cavity and having holes, a shielding portion that is disposed in the cavity and between the bottom portion of the cavity and the ceiling portion and covers the holes in a plan view viewed in the direction in which the bottom portion of the cavity and the ceiling portion are arranged, and sealing portions that are connected to both the ceiling portion and the shielding portion via the holes and seal the holes.

Abstract: A method for producing a micromechanical component, and a micromechanical component, includes providing a substrate having first and second outer surfaces, the second surface facing away from the first surface; forming a through-hole through the substrate from the first outer surface up to the second outer surface; attaching an optical functional layer, on the second outer surface, to cover the through-hole; removing a first segment of the substrate on the first surface of the substrate so that there arises a third outer surface inclined relative to the second surface, the third surface facing away from the second surface, the inclined surface enclosing the through-hole; and separating the micromechanical component by separating a first part of the substrate, having the through-hole, and a second part, attached to the first part, of the optical functional layer from a remaining part of the substrate and a remaining part of the optical functional layer.

Abstract: A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The method further includes forming an airgap in the substrate under the amorphous layer. The method further includes forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap.

Abstract: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.

Abstract: A physical quantity sensor includes a base substrate, a movable part located on the base substrate and provided on a principal surface of the base substrate, a movable electrode part provided in the movable part, and a fixed electrode part provided on the principal surface of the base substrate and located to be opposed to a movable electrode finger, and the fixed electrode part is connected to fixed electrode wiring provided at the principal surface side of the base substrate, the movable electrode part is connected to movable electrode wiring provided at the principal surface side of the base substrate, and a shield part is provided between the fixed electrode wiring and the movable electrode wiring.

Abstract: A method of making a flexible, foldable, stretchable electronic device. The method includes deposition of a polymer layer, such as parylene C, to impart flexibility to the device. The device overcomes the limitations of related flexible electronics schemes by employing established silicon-on-insulator complementary metal-oxide-semiconductor technology with a flexible enclosure. Devices made in such a way may be used in a wide variety of applications including incorporation into medical devices.

Abstract: Provided herein are sensors and methods for determining properties of single cells, such as cell mass. Sensors disclosed herein include resonant sensors having a suspended platform designed to exhibit a uniform vibration amplitude. Methods are also disclosed for measuring changes in cell mass, changes in cell number, changes in cell viscosity and changes in cell elasticity.

Abstract: A Micro-Electro-Mechanical System (MEMS) accelerometer employing a rotor and stator that are both released from a substrate. In embodiments, the rotor and stator are each of continuous a metal thin film. A stress gradient in the film is manifested in capacitive members of the rotor and stator as a substantially equal deflection such that a relative displacement between the rotor and stator associated with an acceleration in the z-axis is substantially independent of the stress gradient. In embodiments, the stator comprises comb fingers cantilevered from a first anchor point while the rotor comprises comb fingers coupled to a proof mass by torsion springs affixed to the substrate at second anchor points proximate to the first anchor point.

Abstract: The disclosure generally relates to method and apparatus for forming three-dimensional MEMS. More specifically, the disclosure relates to a method of controlling out-of-plane buckling in microstructural devices so as to create micro-structures with out-of-plane dimensions which are 1×, 5×, 10×, 100× or 500× the film's thickness or above the surface of the wafer. An exemplary device formed according to the disclosed principles, includes a three dimensional accelerometer having microbridges extending both above and below the wafer surface.

Abstract: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.

Abstract: A method for manufacturing a physical quantity detector is for a physical quantity detector including a flat frame-like base part, a flat plate-like moving part which is arranged inside the base part and has one end thereof connected to the base part via a joint part, and a physical quantity detection element laid on the base part and the moving part. The method includes: integrally forming the base part, the joint part, the moving part, and a connecting part which is provided on a free end side of the moving part and connects the base part and the moving part to each other; laying and fixing the physical quantity detection element on the base part and the moving part; and cutting off the connecting part.

Abstract: Integrated Microelectromechanical System (“MEMS”) devices and methods for making the same. The integrated MEMS device comprises a substrate (200) with first electronic circuitry (206) formed thereon, as well as a MEMS filter device (100). The MEMS filter device has a transition portion (118) configured to (a) electrically connect the MEMS filter device to second electronic circuitry and (b) suspend the MEMS filter device over the substrate such that a gas gap exists between the substrate and the MEMS filter device. The transition portion comprises a three dimensional hollow ground structure (120) in which an elongate center conductor (122) is suspended. The RF MEMS filter device also comprises at least two adjacent electronic elements (102/110) which are electrically isolated from each other via a ground structure of the transition portion, and placed in close proximity to each other.

Abstract: The invention relates to a deflection device for a projection apparatus for projecting Lissajous figures onto an observation field which is made to deflect a light beam about at least one first and one second deflection axis for generating Lissajous figures having a deflection unit for producing oscillations about the deflection axes and having a control apparatus for producing control signals for the deflection unit having a first and second control frequency which substantially corresponds to the resonant frequencies of the deflection unit, wherein the deflection unit has a quality factor of >3,000 and the control apparatus includes a feedback loop which is configured to regulate the first and/or second control frequencies in dependence on a measured phasing of the oscillations of the deflection unit so that the maximum amplitude of the oscillations remains in the resonant range of the deflection unit.