Using Energy Beam To Introduce Dopant Or Modify Dopant Distribution (437/ 16) Patents (Class 438/FOR150)
Foreign Patent Art Collections
- Of semiconductor compound (437/22) (Class 438/FOR156)
- Providing nondopant ion including proton (437/24) (Class 438/FOR158)
- Providing auxiliary heating (437/25) (Class 438/FOR159)
- Forming buried region (437/26) (Class 438/FOR160)
- Including multiple implantations of same region (437/27) (Class 438/FOR161)
- Using oblique beam (437/35) (Class 438/FOR169)
- Using shadow mask (437/36) (Class 438/FOR170)
- Having projected range less than thickness of dielectrics on substrate (437/37) (Class 438/FOR171)
- Into shaped or grooved semiconductor substrate (437/38) (Class 438/FOR172)
- Involving Schottky contact formation (437/39) (Class 438/FOR173)
- Into polycrystalline or polyamorphous regions (437/46) (Class 438/FOR206)
- Integrating active with passive devices (437/47) (Class 438/FOR207)
- Forming plural active devices in grid/array, e.g., RAMS/ROMS, etc. (437/48) (Class 438/FOR208)
- Forming electrodes in laterally spaced relationships (437/50) (Class 438/FOR210)
There are no patents to show for this class.