Abstract: A method of cleaning a conditioner head includes bringing two clamps of a cleaning tool inward toward a disk-shaped pad conditioner head to press a sponge against an outer surface of the disk-shaped pad conditioner head, and creating relative motion between the cleaning tool and the pad conditioner head to wipe the sponge against the pad conditioner head.

Abstract: A method of processing a plate-shaped workpiece that includes on a reverse side thereof a layered body containing metal which is formed in superposed relation to projected dicing lines includes the steps of holding the reverse side of the workpiece on a holding table, thereafter, applying a laser beam having a wavelength that is absorbable by the workpiece to a face side thereof along the projected dicing lines to form laser-processed grooves in the workpiece which terminate short of the layered body, and thereafter, cutting bottoms of the laser-processed grooves with a cutting blade to sever the workpiece together with the layered body along the projected dicing lines. The step of cutting bottoms of the laser-processed grooves includes the step of cutting bottoms of the laser-processed grooves while supplying a cutting fluid containing an organic acid and an oxidizing agent to the workpiece.

Abstract: A system includes a plurality of nozzles, a pump configured to pump a fluid through the nozzles, and a manifold configured to arrange the plurality of nozzles to substantially match a shape of a workpiece. Each nozzle of the plurality of nozzles is configured to impinge upon a section of the workpiece with the fluid.

Abstract: Among other things, a method comprises polishing a surface of a substrate by applying a pressure between the surface of a substrate and a surface of a polishing pad. The surface of the polishing pad defines one or more grooves separated by one or more partition regions. The one or more grooves have an initial depth before the polishing starts and extend from an initial outer surface of the one or more partition regions to an initial bottom of the one or more grooves. The method also comprises removing material below an initial bottom of the one or more grooves such that a distance between an outer surface of the one or more partition regions and a bottom of the one or more grooves remain substantially the same as the initial depth.

Abstract: An abrasive tool including a CMP pad conditioner having a substrate including a first major surface, a second major surface opposite the first major surface, and a side surface extending between the first major surface and the second major, wherein a first layer of abrasive grains is attached to the first major surface and a second layer of abrasive grains is attached to the second major surface. The conditioner further includes a first sealing member extending in a peripheral direction along a portion of the side surface of the substrate.

Abstract: The wafer polishing apparatus comprises a polishing plate, a polishing head capable of holding a wafer, and a slurry supplying section. The polishing plate includes: a plurality of concentric polishing zones, each of which has a prescribed width for polishing the wafer and on each of which a polishing cloth is adhered; and a groove for discharging slurry being formed between the polishing zones. A head cleaning section, which cleans the polishing head, or a wafer cleaning section, which cleans the polished wafer, is provided to a center part of the polishing plate and located on the inner side of the innermost polishing zone.

Abstract: A device for cleaning a fixed abrasive polishing pad includes a main body having a surface facing the polishing pad, an inlet coupled to an end of the main body and configured to supply a cleaning liquid, an inject orifice coupled to the inlet for injecting the cleaning liquid and being provided on the surface of the main body, an outlet coupled to the end of the main body, and a recycle orifice coupled to the outlet, and being provided on the surface of the main body.

Abstract: CMP pad dressers having leveled tips and associated methods are provided. In one aspect, for example, a CMP pad dresser can include a matrix layer and a monolayer of a plurality of superabrasive particles embedded in the matrix layer, where each superabrasive particle in the monolayer protrudes from the matrix layer. The difference in the protrusion distance between the highest protruding tip and the next highest protruding tip of the monolayer of superabrasive particles is less than or equal to about 20 microns, and the difference in protrusion distance between the highest 1% of the protruding tips of the monolayer of superabrasive particles are within about 80 microns or less.

Abstract: A chemical mechanical polishing (CMP) conditioner includes a ceramic substrate having a major surface, and an abrasive coating overlying the major surface. The major surface can include micro-protrusions arranged in a curved pattern. Alternatively, the micro-protrusions can be arranged in an irregular pattern.

Abstract: Methods adapted to clean a chemical mechanical polishing (CMP) pad are disclosed. The methods include positioning an energized fluid delivery assembly over a CMP polishing pad; rotating the polishing pad on a platen; energizing a fluid within the energized fluid delivery assembly; applying the energized fluid to the polishing pad to dislodge slurry residue and debris; and removing the dislodged slurry residue and debris using a vacuum suction unit. Systems and apparatus for carrying out the methods are provided, as are numerous additional aspects.

Abstract: A hand-operated implement has a guide bar on which is fitted a cutting chain for cutting mineral and metal materials. The cutting chain is driven around the guide bar by a chain sprocket. The chain sprocket is arranged in a chain sprocket chamber which is delimited by a chain sprocket cover. A cutting element has an outer side facing a sidewall of the chain sprocket cover which lies in a first notional plane. The distance between the sidewall and the first notional plane measured perpendicular to the first notional plane and centrally between the top of the cutting element and the peripheral wall is less than approximately 0.8 cm over at least 30% of the section between a second notional plane containing the central axis of a fixing bolt on the guide bar and the exit opening at which the cutting chain leaves the chain sprocket chamber.

Abstract: Disclosed is an apparatus for injecting slurry onto the polishing pad surface of a chemical mechanical polishing (CMP) tool. The disclosed apparatus includes a rectilinear shaped injector bottom, where multiple slots are created in the top surface of the injector bottom, allowing the injector bottom to flex and to conform to the polishing pad profile. CMP slurry or components thereof are introduced through one or more top surface openings, travel through the injector body, and exit through a slit or bottom surface opening. The slurry is spread into a thin film by the injector, and is introduced at the gap between the surface of the polishing pad and the wafer, along the leading edge of the wafer, in quantities small enough that all or most of the slurry is introduced between the wafer and the polishing pad.

Abstract: This disclosure is directed to a chemical mechanical polisher and a polishing pad component thereof. The chemical mechanical polisher comprises a polishing platen having a flat surface, and the polishing platen comprises: an electromagnet disposed under the flat surface and configured to fix a polishing pad base on the flat surface; and a switch configured to control the power-on and power-off of the electromagnet. The polishing pad component comprises a polishing pad base, and the polishing pad base is formed of a ferromagnetic material. The chemical mechanical polisher of this disclosure and the polishing pad component thereof can make polishing pad replacement easy, and can also save polishing pads and thus reduce the consumable cost of the chemical mechanical polishing.

Abstract: The method of the present invention are capable of stabilizing a polishing rate, reducing number of times of performing dressing operations, improving work efficiency and extending a span of life of the polishing pad. The method for dressing a polishing pad, which has been used to polish a surface of a work by pressing the work onto the polishing pad fixed on a polishing plate with supplying slurry thereto, by using a grind stone, comprises the steps of: cleaning the polishing pad by supplying high-pressure cleaning water to the polishing pad; and dressing the polishing pad by moving a dressing grind stone, in the radial direction of the polishing pad, along a surface profile thereof, while performing the cleaning step.

Abstract: A method for removing polishing byproducts and a polishing device are provided. The method includes mounting a positive electrode on the center of a polishing platen and a negative electrode on an edge of the polishing platen, applying a voltage between the positive electrode and the negative electrode after a polishing process for metal is finished, and rotating the polishing platen and rinsing a polishing pad with deionized water or a chemical cleaning solution to remove polishing byproducts that are formed in the polishing process. The combination of the centrifugal force and the electromotive force increases the removal rate of the polishing byproducts.

Abstract: Superabrasive tools and methods for making and using the same are provided. In one aspect, for example, a CMP pad dresser includes a first monolayer of superabrasive particles disposed on and coupled to one side of a metal support layer and a second monolayer of superabrasive particles disposed on and coupled to the metal support layer on an opposite side from the first monolayer. The superabrasive particles of the second monolayer are positioned to have substantially the same distribution as the superabrasive particles of the first monolayer.

Abstract: A rotary dresser is provided with a roll having an outer circumferential surface which includes an arc portion or inclined portion differing in diameter in dependence on the axial position thereof, and a plurality of diamond abrasive grains embedded on the outer circumferential surface of the roll. The number of the diamond abrasive grains in the circumferential direction is fixed even at any axial position on the outer circumferential surface of the roll.

Abstract: The wafer polishing apparatus comprises a polishing plate, a polishing head capable of holding a wafer, and a slurry supplying section. The polishing plate includes: a plurality of concentric polishing zones, each of which has a prescribed width for polishing the wafer and on each of which a polishing cloth is adhered; and a groove for discharging slurry being formed between the polishing zones. A head cleaning section, which cleans the polishing head, or a wafer cleaning section, which cleans the polished wafer, is provided to a center part of the polishing plate and located on the inner side of the innermost polishing zone.

Abstract: A method for cleaning a polishing pad includes dispensing a first amount of deionized water on the polishing pad; cleaning the polishing pad with an acidity/alkalinity solution after dispensing the first amount of deionized water on the polishing pad; rinsing the polishing pad with a second amount of deionized water after cleaning the polishing pad with the acidity/alkalinity solution; removing the acidity/alkalinity solution from the polishing pad. In a subsequent CMP process, the method includes polishing a GST material device for obtaining an improved performance of the GST material device.

Abstract: A substrate grinding apparatus according to an exemplary embodiment of the present invention includes a grinding wheel grinding an object substrate, a nozzle unit spraying cooling water to the object substrate and the grinding wheel in a plurality of directions, and a cooling water controller connected to the nozzle unit and controlling spray speed and pressure of the cooling water, in which the nozzle unit includes a cleansing nozzle cleansing the grinding wheel, a cooling nozzle cooling the grinding wheel, and a surface protecting nozzle cooling the object substrate.

Abstract: Disclosed is a semiconductor wafer polishing method for polishing the surfaces to be polished of semiconductor wafers by use of polishing pads (16, 17) provided on fixing plates by relative movement of the polishing pads and the semiconductor wafers held by carriers. The shaping surfaces (25) of a polishing pad shaping jig (21) are shaped by inverting, with respect to ideal shapes, the shapes of the surfaces to be polished of each semiconductor wafer when the surfaces are polished by use of the polishing pads (16, 17) before shaping, and the shapes of the shaping surfaces of the polishing pad shaping jig are transferred to the pad surfaces (16A and 17A) of the respective polishing pads (16, 17). The surfaces to be polished of each semiconductor wafer are polished by use of the pad surfaces.

Abstract: A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.

Abstract: The present invention provides CMP pad dressers and methods for dressing or conditioning CMP pads. In one aspect, a method for conditioning a CMP pad can include cutting the CMP pad with superabrasive cutting elements and controlling a degree of contact between the CMP pad and the cutting elements using control elements. The degree of contact is established through placement of the control elements relative to the cutting elements.

Abstract: A polishing apparatus includes a polishing table with a polishing pad at an upper surface, and a conditioning disc carrying out conditioning of the polishing pad, and a moving mechanism (constructed, for example, from a swing arm) capable of moving the conditioning disc to a standby position above the polishing pad, and a spraying mechanism (constructed, for example, from a washing water nozzle) that sprays liquid to the conditioning disc positioned at the standby position so as to wash or wet the conditioning disc.

Abstract: A system of cleaning a CMP pad used for removing copper from a substrate, the system comprising an abrasive cleaning pad, a cleaning solution delivery system that delivers a cleaning solution, an analyzing system that monitors the characteristics of the cleaning solution optically and chemically, and a carriage that allows the analyzing system to monitor the cleaning solution at a plurality of locations on the CMP pad. The use of the abrasive cleaning pad and the cleaning solution removes contaminants from the CMP pad, and the contaminants are dissolved in the cleaning solution. By measuring the concentration of contaminants in the cleaning solution, the condition of the CMP pad can be monitored. To measure the concentration of the contaminants, changes in the refractive index and absorption of light in the cleaning solution are measured, wherein the refractive index and absorption depend on the concentration of the contaminants.

Abstract: A system for cleaning a conditioning device to improve the efficiency of the conditioning of a polishing pad using the conditioning device as part of a chemical-mechanical polishing process, the system comprising a conditioning device; a fluid dispenser arranged to dispense a fluid on the conditioning device; and an acoustic nozzle arranged to emit a megasonic or ultrasonic signal at the conditioning device while the fluid dispenser is dispensing the fluid on the conditioning device.

Abstract: A dressing roll mounting device for mounting a dressing roll to a dresser shaft of a grinding wheel dressing unit is provided. The dressing roll mounting device includes a mounting sleeve to be positioned at a free end of the dresser shaft, the outer face of the mounting sleeve being provided with a conical mounting region serving as a centering and pushing-on aid during mounting of the dressing roll to the dresser shaft. The maximum outside diameter of the conical mounting region is smaller than or corresponding to a dressing roll reception diameter of the dresser shaft.

Abstract: A grinding wheel dressing assembly includes a driving gear rotatable about a central axis and a dressing ring engaged with the driving gear. Rotation of the driving gear about the central axis results in rotation of the dressing ring about an offset axis, which is offset from the central axis. The dressing ring includes a contact surface generally normal to the offset axis and adapted to remove dull CBN particles from a substantially planar grinding surface of a grinding wheel that comes into contact with the contact surface.

Abstract: A retractable water dispenser arm system for a grinder/polisher includes a flexible hose formed, in part in a loop and affixed at at least one location to a base of the grinder polisher. A spout is mounted to an end of the flexible hose. A biased tension arm engages the hose at the loop, and is moveable, along with movement of the hose, to maintain the hose in tension. The biased tension arm includes a roller over which the hose traverses. A mount on the base is configured to receive the spout and is further configured for traverse of the hose therethrough. The mount includes a mount roller operably mounted thereto for guiding the hose through the mount.

Abstract: A glass treatment apparatus, in one example, can include a fluid dispensing device configured to dispense a substantially laminar flow of a fluid film. In another example, a shroud substantially circumscribes an outer peripheral surface of a working wheel. The shroud includes a slot configured to receive an edge portion of a glass sheet. Methods of treating glass, in one example, include the step of dispensing a substantially laminar flow of a fluid film along a fluid plane to subsequently land on a first side of a glass sheet. In further examples, a fluid is passed over an inner surface of a shroud to carry away machined particles from a glass sheet. In still further examples, an outer peripheral surface of a working wheel is impacted with a fluid stream to clean the working wheel from glass particles generated when machining an edge of the glass sheet.

Abstract: A polishing apparatus polishes a surface of a substrate by pressing the substrate against a polishing pad on a polishing table. The polishing apparatus is configured to control a temperature of the polishing surface of the polishing pad by blowing a gas on the polishing pad during polishing. The polishing apparatus includes a pad temperature control mechanism having at least one gas ejection nozzle for ejecting a gas toward the polishing pad and configured to blow the gas onto the polishing pad to control a temperature of the polishing pad, and an atomizer having at least one nozzle for ejecting a liquid or a mixed fluid of a gas and a liquid and configured to blow the liquid or the mixed fluid onto the polishing pad to remove foreign matters on the polishing pad. The pad temperature control mechanism and the atomizer are formed into an integral unit.

Abstract: A method for removing polishing byproducts and a polishing device are provided. The method includes mounting a positive electrode on the center of a polishing platen and a negative electrode on an edge of the polishing platen, applying a voltage between the positive electrode and the negative electrode after a polishing process for metal is finished, and rotating the polishing platen and rinsing a polishing pad with deionized water or a chemical cleaning solution to remove polishing byproducts that are formed in the polishing process. The combination of the centrifugal force and the electromotive force increases the removal rate of the polishing byproducts.

Abstract: An implement for cleaning mineral ring build up in a toilet bowl. The inventive device is an attachment driven by a cordless drill. It consists of a ball covered with a non abrasive material attached to a shaft which rotates the ball to remove mineral ring build up on toilet bowls.

Abstract: A chemical mechanical polishing apparatus includes a container, a platen, first and second brushes, a polishing pad, a carrier, and a slurry supplier. The container has a bottom wall and a side wall. The side wall has an inwardly-extending upper portion. The platen is supported over the bottom wall. The platen is positioned lower than the inwardly-extending upper portion. The first brush brushes the side wall. The first brush is fixed to a side surface of the platen. The second brush brushes a side surface of the platen. The second brush is fixed to the bottom wall. The polishing pad is attached to the platen. The carrier presses a workpiece to be polished against the polishing pad. The slurry supplier supplies a slurry onto the polishing pad.

Abstract: A device for cleaning a fixed abrasive polishing pad includes a main body having a surface facing the polishing pad, an inlet coupled to an end of the main body and configured to supply a cleaning liquid, an inject orifice coupled to the inlet for injecting the cleaning liquid and being provided on the surface of the main body, an outlet coupled to the end of the main body, and a recycle orifice coupled to the outlet, and being provided on the surface of the main body.

Abstract: The invention provides a polishing pad conditioner that enables stabilization of brazing metal melting point, minimization of abrasive grain detachment by uniformizing and stabilizing abrasive grain brazing condition, and enhancement of flatness by minimizing thermal deformation of the metal support. The polishing pad conditioner is fabricated by brazing multiple abrasive grains to the surface of a metal support with brazing metal, wherein the composition of the brazing metal expressed in mass % is such that 70%?Ni+Fe?90% (provided that 0?Fe/(Ni+Fe)?0.4), 1%?Cr?25%, 2%?Si+B?15% (provided that 0?B/(Si+B)?0.8), and 0.1%?P?8%.

Abstract: The method of the present invention are capable of stabilizing a polishing rate, reducing number of times of performing dressing operations, improving work efficiency and extending a span of life of the polishing pad. The method for dressing a polishing pad, which has been used to polish a surface of a work by pressing the work onto the polishing pad fixed on a polishing plate with supplying slurry thereto, by using a grind stone, comprises the steps of: cleaning the polishing pad by supplying high-pressure cleaning water to the polishing pad; and dressing the polishing pad by moving a dressing grind stone, in the radial direction of the polishing pad, along a surface profile thereof, while performing the cleaning step.

Abstract: To provide a technique for rotating a plurality of carriers 500 between an upper and a lower rotary surface plates to simultaneously polish both surfaces of a plurality of works 400. The work 400 is merged with the carrier 500 outside a polishing apparatus main body 110. The work 400 is supplied onto a lower rotary surface plate 111 of the polishing apparatus main body 110 while remaining merged with the carrier 500. The present invention enables the work 400 on the lower rotary surface plate 111 to be perfectly automatically supplied. After double side polishing has been completed and when an upper rotary surface plate, a liquid such as a water is injected from the upper rotary surface plate to hold the plurality of works 400 to have both surfaces thereof polished, on the lower rotary surface plate 111. The present invention enables the works 400 to be automatically ejected from the lower rotary surface plate 111.

Abstract: A polishing pad conditioning apparatus includes a laser beam generating unit for providing a laser beam, a fluid delivery system for providing a fluid stream and a vacuum line for removing debris. The laser beam may directly impinge on a surface of a polishing pad thereby creating cutting action, while an atomized fluid stream provides cooling and pad debris along with fluid are removed thru the vacuum line. Alternatively, the laser beam may be combined with the atomized fluid stream in a region above the pad surface to substantially impart part of its energy to the fluid stream, generating high energy droplets which provide “cool” cutting action on the pad surface.

Abstract: A manufacturing method for grinding tool includes following steps. Step 1 is providing a substrate. Step 2 is fixing diamond or abrasive grit in a predetermined position or base by DIAMAP (Diamond Implant Array Mapping & Arrangement Process). The last step is providing a second fixing layer onto the first fixing base and the exposed surface of the substrate. The first fixing base and the second fixing layer are used for fixing the abrasive grits on the substrate. Moreover, a grinding tool is provided in the present invention.

Abstract: A chemical mechanical polishing (CMP) device for processing a wafer is provided which includes a plate for supporting the wafer to be processed in a face-up orientation, a polishing head opposing the plate, wherein the polishing head includes a rotatable polishing pad operable to contact the wafer while the polishing pad is rotating, and a slurry coating system providing a slurry to the polishing pad for polishing the wafer.

Abstract: A pad conditioner is provided for conditioning a polishing pad in chemical mechanical planarization (CMP). The pad conditioner comprises a plastic abrasive portion having a first hardness and optionally a brush portion having a second hardness less than the first hardness. The plastic abrasive portion comprises a base plate and a plurality of plastic nodules formed on a surface of the base plate, each of the plastic nodules having a planar top surface, wherein the planar top surface is positioned to substantially contact a polishing pad. The brush portion may be positioned adjacent to the plastic abrasive portion, the brush portion having a plurality of brush elements positioned to substantially contact the pad.

Abstract: The equipment for cleaning polishing cloth is capable of increasing pressure of washing water received by the polishing cloth, securely removing deposits from the polishing cloth and improving polishing efficiency. The equipment is used in a polishing apparatus, in which a work piece is pressed onto the polishing cloth adhered on a polishing plate and the work piece is relatively moved with respect to the polishing plate with supplying slurry to the polishing cloth so as to polish the work piece. The equipment comprises a nozzle unit having a nozzle capable of spraying high-pressure washing water toward the polishing cloth so as to clean the polishing cloth. The nozzle is a straight nozzle capable of linearly spraying the washing water and perpendicularly spraying the washing water with respect to the polishing cloth.

Abstract: A retractable water dispenser arm system for a grinder/polisher includes a flexible hose formed, in part in a loop and affixed at at least one location to a base of the grinder polisher. A spout is mounted to an end of the flexible hose. A biased tension arm engages the hose at the loop, and is moveable, along with movement of the hose, to maintain the hose in tension. The biased tension arm includes a roller over which the hose traverses. A mount on the base is configured to receive the spout and is further configured for traverse of the hose therethrough. The mount includes a mount roller operably mounted thereto for guiding the hose through the mount.

Abstract: A cleaning device for chemical-mechanical equipment, which includes: an irrotatable center shaft irrotatably coupled with a spindle which is rotated, the irrotatable center shaft including a first channel and a second channel formed in an interior of the irrotatable center shaft, cleaning liquid flowing into the first channel and compressed gas flowing into the second channel; and a nozzle block coupled with the spindle so as to revolve about the irrotatable center shaft above a polishing pad, the nozzle block mixing cleaning liquid supplied through the first channel with compressed gas supplied through the second channel so as to generate twin-fluid, and pressure-injecting the mixed twin-fluid on the polishing pad. Accordingly, cleaning liquid is pressurized so as to be rapidly injected on a polishing pad so that slurry particles and alien substances on the polishing pad are completely removed. Furthermore, wafer scratch can be prevented and the life of the polishing pad can also be increased.

Abstract: Polishing pads used in CMP machines are consumable components that are typically replaced after a specific number of wafers have been processed. The life of a polishing pad is optimized by controlling the rate of material removal from the polishing pad by the conditioning disk. The conditioning disk removes enough material so the polishing surface can properly process the wafers but does not remove any excess material. Preventing excess material removal extends the life of the polishing pad. During CMP processing, the controller receives data concerning the torque applied to the conditioning disk and the torque applied to the arm to sweep the conditioning disk across the polishing pad. Based upon the detected operating conditions, the system can predict the rate of material removal and adjust the forces applied to the conditioning disk so that the life of the polishing pad is optimized.

Abstract: An abrasive article includes a plurality of abrasive particles securely affixed to a substrate with a corrosion resistant matrix material. The matrix material includes a sintered corrosion resistant powder and a brazing alloy. The brazing alloy includes an element which reacts with and forms a chemical bond with the abrasive particles, thereby securely holding the abrasive particles in place. A method of forming the abrasive article includes arranging the abrasive particles in the matrix material, and applying sufficient heat and pressure to the mixture of abrasive particles and matrix material to cause the corrosion resistant powder to sinter, the brazing alloy to flow around, react with, and form chemical bonds with the abrasive particles, and allow the brazing alloy to flow through the interstices of the sintered corrosion resistant powder and form an inter-metallic compound therewith.

Abstract: The invention provides a polishing pad conditioner that enables stabilization of brazing metal melting point, minimization of abrasive grain detachment by uniformizing and stabilizing abrasive grain brazing condition, and enhancement of flatness by minimizing thermal deformation of the metal support. The polishing pad conditioner is fabricated by brazing multiple abrasive grains to the surface of a metal support with brazing metal, wherein the composition of the brazing metal expressed in mass % is such that 70%?Ni+Fe?90% (provided that 0?Fe/(Ni+Fe)?0.4), 1%?Cr?25%, 2%?Si+B?15% (provided that 0?B/(Si+B)?0.8), and 0.1%?P?8%.

Abstract: A pedestal pad (workpiece supporting table pad) is arranged on the top of a pedestal (workpiece supporting table) for temporarily placing and holding a pre-polished or post-polished wafer (workpiece). This pedestal pad is formed of resin, and at least a surface of the pedestal pad which comes into contact with the wafer is non-absorbable to a fluid. The tissue of the pedestal pad is dense and smooth, and does not have any cavity, such as fine holes, which holds the fluid.

Abstract: A method of planarizing a semiconductor structure comprises moving a conditioning element on a surface of a polishing member, rotating the semiconductor structure relative to the polishing member against the surface of the polishing member, and rinsing the surface of the polishing member and the semiconductor structure. While the conditioning element is moved over the surface of the polishing member and the semiconductor structure is rotated against the surface of the polishing member, slurry is directed onto the polishing member. The step of rinsing comprises contacting the conditioning element to the surface of the polishing member.