Abstract: There is disclosed a polishing apparatus which can regulate a surface temperature of the polishing pad without causing a defect such as a scratch on a substrate such as a wafer. The polishing apparatus includes: a non-contact type pad-temperature regulating device; a pad-temperature measuring device. The pad-temperature measuring device is arranged adjacent to the pad-temperature regulating device and on a downstream side of the pad-temperature regulating device in a rotation direction of a polishing table.

Abstract: A pad-temperature regulating apparatus is disclosed, which includes a heat exchanger capable of being cleaned in a limited space. A pad-temperature regulating apparatus includes a heat exchanger configured to contact a polishing pad to exchange heat with the polishing pad, a moving mechanism configured to move the heat exchanger between a temperature regulating position where the heat exchanger can exchange heat with the polishing pad, and a retreat position located on a side of the polishing pad, and a cleaning mechanism configured to clean the heat exchanger moved to the retreat position. The heat exchanger has an approximate triangular shape in a horizontal cross-section, and a longest side of the heat exchanger faces the polishing pad when the heat exchanger is moved to the retreat position.

Abstract: A chemical mechanical polishing system includes a polishing a port to dispense polishing liquid onto a polishing pad and a liquid flow controller to control a flow rate of the polishing liquid to the port, a temperature control system to control a temperature of the polishing pad, and a control system. The control system is configured to obtain a baseline removal rate, a baseline temperature and a baseline polishing liquid flow rate. A function is stored relating removal rate to polishing liquid flow rate and temperature. The function is used to determine a reduced polishing liquid flow rate and an adjusted temperature such that a resulting removal rate is not below the baseline removal rate. The liquid flow controller is controlled to dispense the polishing liquid at the reduced polishing liquid flow rate and control the temperature control system so that the polishing process reaches the adjusted temperature.

Abstract: A pad-temperature regulating device is disclosed, which can improve a responsiveness of a control for a surface temperature of a polishing pad and regulate the surface temperature of the polishing pad without causing defects, such as scratches, on the substrate. The pad-temperature regulating apparatus includes: a heat exchanger disposed above the polishing pad, whose temperature is maintained at a predetermined temperature; a pad-temperature measuring device configured to measure the surface temperature of the polishing pad; a distance sensor configured to measure a separation distance between the polishing pad and the heat exchanger; an elevating mechanism for moving the heat exchanger vertically with respect to the polishing pad; and a controller configured to control operation of the elevating mechanism based on measured values of the pad-temperature measuring device.

Abstract: An apparatus for CMP includes a wafer carrier retaining a semiconductor wafer during a polishing operation, a slurry dispenser dispensing an abrasive slurry, and a slurry temperature control device coupled to the shiny dispenser and configured to control a temperature of the abrasive slurry. The slurry temperature control device includes a heat transferring portion surrounding a portion of the slurry dispenser, and a thermos-electric (TE) chip coupled to the heat transferring portion and configured to control the temperature of the abrasive slurry.

Abstract: A chemical mechanical polishing (CMP) system includes a polishing pad configured to polish a substrate. The CMP system further includes a heating system configured to adjust a temperature of the polishing pad. The heating system comprises at least one heating element spaced apart from the polishing pad. The CMP system further includes a sensor configured to measure the temperature of the polishing pad.

Abstract: An ostomy bag includes a textile layer bonded to the barrier film along a portion of an outer periphery of the ostomy bag.

Abstract: A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a dispenser to supply a polishing liquid to the polishing surface, and a temperature control system including a body configured to contact the polishing surface or the polishing liquid on the polishing surface. The body supports a thermal control module positioned over the polishing pad.

Abstract: An object of the present invention is to improve in-plane uniformity in polishing in a polishing device. A temperature adjusting device for adjusting temperature of a rotating polishing pad comprises: a heat conductor that can contact with a top face of the polishing pad; an arm for holding the heat conductor above the polishing pad; column members formed to stand on a top face of the heat conductor, comprising an upstream-side column member and a downstream-side column member arranged at a position at an upstream/downstream side of rotation of the polishing pad; and overhung members extending, from the upstream-side column member and the downstream-side column member, in directions that are parallel to the top face of the heat conductor; wherein the overhung members can contact with a top face of the arm.

Abstract: The present disclosure provides a wet chemical heating system, including a first conduit for transporting wet chemical, a dispensing head connected to the first conduit, and a radiative heating element configured to heat the wet chemical in the first conduit and positioned at an upper stream of the dispensing head.

Abstract: A cleaning apparatus capable of effectively removing dirt attached to a bottom surface of a heat exchanger, is disclosed. The cleaning apparatus cleans the heat exchanger for regulating a surface temperature of a polishing pad. This cleaning apparatus includes: a moving mechanism configured to move the heat exchanger between a temperature-regulating position in which the heat exchanger can exchange heat with the polishing pad, and a retreat position in which the heat exchanger is separated from a surface of the polishing pad; and a cleaning mechanism configured to clean a bottom surface of the heat exchanger moved to the retreat position The retreat position is located on a side of the polishing pad. The cleaning mechanism includes at least one cleaning nozzle for ejecting a cleaning liquid to the bottom surface of the heat exchanger, or a cleaning tank in which the bottom surface of the heat exchanger can be immersed.

Abstract: The present disclosure includes methods and systems for lapping a row bar of sliders. According to the present disclosure, an electrical interconnect configuration is provided that permits the net current provided to a row bar to heat electrical heating devices during lapping to be managed so as help prevent exceeding breakdown currents of related electrical channels.

Abstract: A polishing assembly for polishing of silicon wafers is provided. The polishing assembly includes a polishing pad, a polishing head assembly, a temperature sensor, and a controller. The polishing head assembly holds a silicon wafer to position the silicon wafer in contact with the polishing pad. The polishing head assembly selectively varies a removal profile of the silicon wafer. The temperature sensor collects thermal data from a portion of the polishing pad. The controller is communicatively coupled to the polishing head assembly and the temperature sensor. The controller receives the thermal data from the temperature sensor and operates the polishing head assembly to selectively vary the removal profile of the silicon wafer based at least in part on the thermal data.

Abstract: A non-transitory computer-readable storage media having computer-executable instructions embodied thereon for operating a polishing assembly for polishing of silicon wafers is provided. When executed by at least one processor, the computer-executable instructions cause the processor to receive thermal data of a portion of a polishing pad from a temperature sensor and determine a removal profile of a silicon wafer based at least in part on the thermal data. The computer-executable instructions cause the processor to operate a polishing head assembly to position the silicon wafer in contact with the polishing pad and to selectively vary the removal profile of the silicon wafer based at least in part on the thermal data.

Abstract: A heat exchanger which can allow a surface temperature of a polishing pad to promptly reach a target temperature and can realize a uniform distribution of the surface temperature of the polishing pad is disclosed. The heat exchanger includes a pad contact surface capable of contacting the polishing pad, a heating flow passage through which a heating fluid is to flow, and a cooling flow passage through which a cooling fluid is to flow. The heating flow passage and the cooling flow passage are arranged side by side from beginnings to ends thereof, and the heating flow passage and the cooling flow passage cross each other at different levels at a peripheral portion of the pad contact surface.

Abstract: A polishing apparatus polishes a surface of a substrate by pressing the substrate against a polishing pad on a polishing table. The polishing apparatus is configured to control a temperature of the polishing surface of the polishing pad by blowing a gas on the polishing pad during polishing. The polishing apparatus includes a pad temperature control mechanism having at least one gas ejection nozzle for ejecting a gas toward the polishing pad and configured to blow the gas onto the polishing pad to control a temperature of the polishing pad, and an atomizer having at least one nozzle for ejecting a liquid or a mixed fluid of a gas and a liquid and configured to blow the liquid or the mixed fluid onto the polishing pad to remove foreign matters on the polishing pad. The pad temperature control mechanism and the atomizer are formed into an integral unit.

Abstract: A collecting bag for human body wastes having a barrier film (20a, 20b) covered by a comfort layer (15) attached to the barrier film in an attachment zone wherein the comfort layer is a textile material that is attached to said barrier film in one or more zones of attachment such that not all of the fiber filaments of the textile material in the attachment zone(s) are embedded in the barrier film material.

Abstract: The invention relates to devices, systems and methods for restoring optical discs, including CD's, DVD's and Blu-ray discs. The invention provides an easy to use device for user's to repair optical discs without having to clean or remove rotating pads in the device between uses for the life of the pads of about 84 cycles.

Abstract: A tool sharpening assembly suitable for sharpening cutting tools. In accordance with some embodiments, the apparatus has a rotatable abrasive surface, and a tool support structure which contactingly supports a body portion of a tool while a cutting surface of the tool is presented against the abrasive surface during a sharpening operation. A cooling mechanism operates to reduce a temperature of the tool.

Abstract: A carrier for a slider row bar for a lapping process. The carrier has a mounting structure comprising a material configured to have a first modulus of at least 1,000,000 Pa at a first period of time and a second modulus of 500 Pa to 500,000 Pa at a second period of time subsequent to the first period. The change from the first modulus to the second modulus is due to an external stimulus on the material.

Abstract: A polishing is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a substrate holding apparatus configured to hold the substrate and to press the substrate against the polishing surface, and a controller. The substrate holding apparatus includes an elastic membrane configured to forma substrate holding surface which is brought into contact with the substrate, a carrier provided above the elastic membrane, at least one pressure chamber formed between the elastic membrane and the carrier, and an infrared light detector configured to measure thermal energy from the elastic membrane. The controller calculates an estimate value of a temperature of the elastic membrane using a measured value of the infrared light detector.

Abstract: A method for cooling a cylindrical workpiece during wire sawing includes applying a liquid coolant to a surface of the workpiece. The workpiece is made of semiconductor material having a surface including two end faces and a lateral face. The method includes sawing the workpiece with a wire saw including a wire web having wire sections arranged in parallel by penetrating the wire sections into the workpiece by an oppositely directed relative movement of the wire sections and the workpiece. Wipers are disposed so as to bear on the surface of the workpiece. The temperature of the workpiece is controlled during the wire sawing using a liquid coolant applied onto the workpiece above the wipers so as to remove the liquid coolant with the wipers bearing on the workpiece surface.

Abstract: A method of grinding spring ends of helical compression springs is carried out using a numerically controlled spring end grinding machine having a grinding unit, a loading unit and a control unit that controls the loading unit and the grinding unit. The grinding unit has a pair of grinding wheels including two rotatable grinding wheels between which is formed a grinding space. The loading unit has at least one loading plate substantially rotatable axially parallel to the grinding wheels and has a plurality of out-of-axis spring receptacles, each to receive a helical compression spring.

Abstract: A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a substrate holding apparatus configured to hold the substrate and to press the substrate against the polishing surface, and a controller. The substrate holding apparatus includes an elastic membrane configured to form a substrate holding surface which is brought into contact with the substrate, a carrier provided above the elastic membrane, at least one pressure chamber formed between the elastic membrane and the carrier, and an infrared light detector configured to measure thermal energy from the elastic membrane. The controller calculates an estimate value of a temperature of the elastic membrane using a measured value of the infrared light detector.

Abstract: An apparatus for polishing a substrate includes a rotatable polishing table supporting a polishing pad, a substrate holder configured to hold the substrate and press the substrate against a polishing surface of the polishing pad on the rotating polishing table so as to polish the substrate, and a pad-temperature detector configured to measure a temperature of the polishing surface of the polishing pad. The apparatus also includes a pad-temperature regulator configured to contact the polishing surface to regulate the temperature of the polishing surface, and a temperature controller configured to control the temperature of the polishing surface by controlling the pad-temperature regulator based on information on the temperature of the polishing surface detected by the pad-temperature detector.

Abstract: A cooling system and method for a machining process. The system includes a coolant supply and a coolant activation assembly, where the coolant supply is configured to provide coolant to the coolant activation assembly. The coolant activation assembly includes a plurality of piezoelectric actuators. Each of the plurality of piezoelectric actuators is configured to emit a coolant stream and to impart an ultrasonic or megasonic vibration component to each coolant stream. The coolant activation assembly is configured to provide cooling to a focal point in a work zone by directing multiple coolant streams emitted by the plurality of piezoelectric actuators to the focal point such that multiple coolant streams converge at the focal point.

Abstract: A machining device for machining crankshafts has a rotationally driven disk-shaped base body with blade inserts arranged peripherally thereon. A first supply line for a cryogenic cooling medium is arranged concentrically with the axis of rotation and is thermally insulated in at least some sections. The tool has a plurality of second supply lines for the cryogenic cooling medium running across the axis of rotation and leading to the blade inserts, the second supply lines each being thermally insulated in at least some sections. A distributor unit connects the first supply line to at least one of the second supply lines for supplying the cryogenic cooling medium to at least one of the blade inserts. The cryogenic cooling medium can be conducted directly to the blade inserts which are engaged with the crankshaft that is to be machined.

Abstract: A scratch removal tool that includes a motor, a housing, a rotatable shaft operably coupled to the motor and movable in an axial direction along a length of the shaft, and a head assembly. The head assembly includes a shroud member having an open end, a pad member, a slurry input, a slurry output, and a seal member. The pad member is positioned within the shroud and mounted to the shaft. Rotation of the shaft rotates the pad member. Axial movement of the shaft moves the pad member relative to the open end of the shroud. The slurry input and slurry are in fluid communication with the pad member. The seal member is positioned at the open end of the shroud.

Abstract: An apparatus for polishing a substrate includes a rotatable polishing table supporting a polishing pad, a substrate holder configured to hold the substrate and press the substrate against a polishing surface of the polishing pad on the rotating polishing table so as to polish the substrate, and a pad-temperature detector configured to measure a temperature of the polishing surface of the polishing pad. The apparatus also includes a pad-temperature regulator configured to contact the polishing surface to regulate the temperature of the polishing surface, and a temperature controller configured to control the temperature of the polishing surface by controlling the pad-temperature regulator based on information on the temperature of the polishing surface detected by the pad-temperature detector.

Abstract: A double-side polishing apparatus including at least: upper and lower turn tables each having a polishing pad attached thereto; a carrier having a holding hole formed therein for holding a wafer between the upper and lower turn tables; a sensor for detecting a thickness of the wafer during polishing, the sensor being disposed in a through-hole provided at the upper turn table in a direction of an upper-turn-table rotation axis; and a sensor holder for holding the sensor, wherein a material of the sensor holder is quartz. As a result, there is provided a double-side polishing apparatus that can polish a wafer while the difference from the target wafer thickness is reduced by surely inhibiting deformation of the sensor holder due to the influence of heat generated during the polishing of the wafer.

Abstract: A method for operating a machining tool, comprising: setting a flow rate and a pressure of a flow of coolant to a target flow rate and a pressure target, respectively, the coolant flow being provided to the machining tool; machining a work-piece using the machining tool; measuring the flow rate and the pressure of the flow of coolant; and detecting an anomaly with respect to the coolant flow; and taking a corrective action depending on the type of the detected anomaly.

Abstract: An example component machining method includes immersing a surface of a component within a fluid during a machining process. The method heats the surface during the machining to vary the machining process at the surface relative to other surfaces of the component.

Abstract: In a wafer processing method, an ingot is sliced into a wafer and the wafer is planarized by polishing a surface of the wafer. When the wafer is planarized, the wafer is disposed on a wafer holder and the wafer is rotated, a heat quantity is applied to a portion of the wafer so as to form a reformed layer at the portion of the wafer, and a polishing tool is brought into contact with the portion of wafer while rotating so as to polish the portion of the wafer.

Abstract: A device for treating wafers on assembly carriers is disclosed. A wafer to be treated can be fixed on a liquid film that is located between the front side of the wafer and the assembly carrier by freezing of the film.

Abstract: A method for slicing wafers from a workpiece includes providing wire guide rolls each having a grooved coating with a specific thickness and providing rings at opposing ends of a first of the coatings of a respective wire guide roll. The rings are fixed exclusively to the first coating. A sawing wire including wire sections disposed in a parallel fashion is tensioned between the wire guide rolls. The wire sections of the sawing wire are moved relative to the workpiece so as to perform a sawing operation. A change in length of the first coating, brought about by a temperature change, is measured by measuring distances between sensors and the rings. The wire guide rolls are cooled in a manner dependent on the measured distances.

Abstract: According to one embodiment, a polishing method comprises pressing a substrate being rotated against a polishing pad being rotated and supplying slurry on the polishing pad, measuring a surface temperature of the polishing pad, and when the surface temperature is not less than a predetermined temperature, jetting jet stream containing supercooled droplets from a nozzle having a narrow portion toward the polishing pad.

Abstract: A method of making a compound semiconductor substrate includes providing a GaN compound semiconductor single crystal ingot, and cutting the ingot with a cutter to form a GaN single crystal substrate. The cutting is performed while controlling a temperature in a contact portion between the ingot and the cutter to be not more than 160° C. such that a cut surface of the GaN single crystal substrate has an arithmetical mean waviness (Wa) not more than 9 ?m.

Abstract: Closed loop control may be used to improve uniformity of within wafer uniformity using chemical mechanical planarization. For example, closed loop control may be used to determine a control profile for a chemical mechanical planarization process to more uniformly and consistently achieve the desired extent of variation of within wafer uniformity of a semiconductor wafer.

Abstract: A polishing method includes simultaneously polishing two substrates, a first substrate and a second substrate, on the same polishing pad. A default overpolishing time is stored and an in-situ monitoring system monitors the two substrates. The in-situ monitoring system further determines a first polishing endpoint time and a second polishing endpoint time of the first and second substrates, respectively. The polishing method further includes calculating an overpolishing stop time where the overpolishing stop time is between the first polishing endpoint time plus the default overpolishing time and the second polishing endpoint time plus the default overpolishing time. Polishing of the first substrate is continued past the first polishing endpoint time and polishing of the second substrate is continued past the second polishing endpoint time. Polishing of both the first substrate and the second substrate is halted simultaneously at the overpolishing stop time.

Abstract: A machining method comprises selecting a finished surface dimension and a material property for a working surface, defining a working temperature range based on the selected material property, and defining a machining power based on the working temperature range. The machining power depends on a removal rate and a specific heat of the working surface. The working surface is machined at the removal rate to achieve the finished surface dimension, and the machine power is controlled to maintain the working surface within the working temperature range. The working surface is heated or cooled from the working temperature range to a transition temperature range, such that the selected material property is preserved in the working surface.

Abstract: Embodiments of the present invention relate to apparatus and method for improve uniformity of a polishing process. Embodiments of the present invention provide a heating mechanism configured to apply thermal energy to a perimeter of a substrate during polishing, or a cooling mechanism configured to cool a central region of the substrate during polishing, or a biased heating mechanism configured to create a temperature step differential on a given radius of a polishing pad.

Abstract: An ultra-low temperature magnetic polishing machine includes a housing defining therein a grinding chamber, a door hinged to the housing and controllable to open/close the grinding chamber, a motor mounted inside the housing below the grinding chamber, a magnetic disc set in between the grinding chamber and the motor and rotatable by the motor to cause an alternative magnetic field in the grinding chamber, a freezer having an output pipeline inserted into the grinding chamber and freezing medium deliverable through the output pipeline into the grinding chamber, a container set in the grinding chamber, and magnetically conductive grinding media put in the container.

Abstract: The invention is directed to a method for slicing an ingot in the form of a wafer by winding a wire around a plurality of grooved rollers and pressing the wire against the ingot while making the wire travel and supplying slicing slurry to the grooved rollers, in which when the ingot is sliced, an amount of displacement of the ingot changing in an axial direction is measured and an amount of axial displacement of the grooved rollers is controlled so as to correspond to the measured amount of axial displacement of the ingot, and thereby, the ingot is sliced while controlling a relative position of the wire relative to an entire length of the ingot changing in the axial direction. As a result, a slicing method and a wire saw apparatus are provided that can perform slicing in such a way that a Bow or a Warp in a wafer obtained by slicing can be reduced, for example, by controlling a slicing path built into an ingot so that, in particular, the slicing path becomes flattened.

Abstract: A system for machining a work-piece is described which includes a machine tool and coolant delivery unit, pressure and flow rate sensors, and a control unit. The control unit controls coolant delivery and is adapted to detect a first anomaly when either a measured flow rate or pressure deviates from target flow rates and pressures by a first predetermined amount, and to detect a second anomaly when the measured flow rate or pressure deviates from the target flow rates and pressures by a second predetermined amount greater than the first. An alarm signal is outputted when the first anomaly is detected, and the machine tool is stopped when the second anomaly is detected.

Abstract: Certain embodiments disclosed herein relate to compositions, methods, devices, systems, and products regarding frozen particles. In certain embodiments, the frozen particles include materials at low temperatures. In certain embodiments, the frozen particles provide vehicles for delivery of particular agents. In certain embodiments, the frozen particles are administered to at least one biological tissue.

Abstract: Certain embodiments disclosed herein relate to compositions, methods, devices, systems, and products regarding frozen particles. In certain embodiments, the frozen particles include materials at low temperatures. In certain embodiments, the frozen particles provide vehicles for delivery of particular agents. In certain embodiments, the frozen particles are administered to at least one biological tissue.

Abstract: A nozzle for cooling lubricant is described having a connecting chamber with a chamber inlet and with a deflector plate in the interior of the connecting chamber that is held on at least two mounting means, a main chamber that is removably mounted by the rear face on the front face of the connecting chamber and has a diffusion plate with drilled holes, and a nozzle plate that is removably mounted by the rear face on the front face of the main chamber and has a hole pattern adapted to a grinding wheel profile.

Abstract: The present invention provides a method of working a high hardness material including the steps of heating the high hardness material, working the high hardness material by using a polishing tool, cooling the polishing tool at a position which is different from a worked part, and washing the polishing tool at a position which is different from the worked part.

Abstract: Certain embodiments disclosed herein relate to compositions, methods, devices, systems, and products regarding frozen particles. In certain embodiments, the frozen particles include materials at low temperatures. In certain embodiments, the frozen particles provide vehicles for delivery of particular agents. In certain embodiments, the frozen particles are administered to at least one substrate.

Abstract: A chemical mechanical apparatus comprises a polishing platen, a roller pad assembly capable of advancing a polishing pad across the platen, a substrate carrier to press a substrate against the polishing pad, and a heater to heat the substrate to a temperature sufficiently high to provide a rate of removal of material from the substrate that compensates for the wear of the polishing pad.