Abstract: A sanding machine, in particular for processing wood surfaces, includes a support and transport plane for the forwarding of the workpieces to be processed; and a belt sanding unit with a transverse abrasive belt inside which a pressure pad is arranged obliquely. The pressure pad is divided into a plurality of pressure elements which can be actuated individually and are controlled by respective sensors that constitute a control beam. Methods are described for compensating the different distances between sensor and respective pressure elements that avoid adaptations of the position of the workpiece to be processed, in particular if the machine contains further non inclined processing units. The sanding machine is particularly suitable even for the processing of large workpieces.

Abstract: The present disclosure provides a method for performing a non-revisiting coverage task by a manipulator with a least number of lift-offs, and relates to the technical field of manipulator path planning. By explicitly considering lift-offs of an end-effector from a surface of an object due to kinematic constraints when the manipulator performs a task of covering the surface of the object, this method transforms a problem of coverage path design into a problem of sub-cell decomposition and solves the problem to obtain an approach for the manipulator to cover a sub-cell. The method of the present disclosure minimizes the number of lift-offs of the end-effector from the surface of the object when the manipulator performs the coverage task.

Abstract: In some embodiments, the present disclosure relates to a chemical mechanical planarization (CMP) tool. The CMP tool includes a carrier and a malleable membrane coupled to the carrier and having a lower surface facing away from the carrier. The lower surface of the malleable membrane includes a first malleable material within a central region of the lower surface and a second malleable material within a peripheral region of the lower surface, which surrounds the central region. The first malleable material provides the central region of the lower surface with a first stiffness and the second malleable material provides the peripheral region of the lower surface with a second stiffness that is different than the first stiffness.

Abstract: Embodiments provided herein provide for methods and apparatus for detecting, authenticating, and tracking processing components, including consumable components or non-consumable components used on substrate processing systems for electronic device manufacturing, such as semiconductor chip manufacturing. The semiconductor processing systems and/or its processing components herein include a remote communication device, such as a wireless communication apparatus, for example, radio frequency identification (RFID) devices or other devices embedded in, disposed in, disposed on, located on, or otherwise coupled to one or more processing components or processing component assemblies and/or integrated within the semiconductor processing system itself. The processing component may include a single component (part) or an assembly of components (parts) that are used within the semiconductor processing tool.

Abstract: Provided is a double-side polishing apparatus and a double-side polishing method for a work which make it possible to terminate double-side polishing with timing allowing a work having been polished to have a target shape. A computing unit performs a step of grouping the data of thicknesses on a work basis; a step of extracting shape components of each work; a step of identifying a position of each of the shape components in the work radial direction; a step of computing a shape distribution of the work; a step of obtaining a shape index of the work; and a step of determining timing at which the obtained shape index becomes a set value of the shape index, determined based on a difference between a target value and an actual value of the shape index in the previous batch, as timing of termination of the double-side polishing.

Abstract: Methods and apparatus to control a fluid dispenser on a metallurgical specimen preparation machine are disclosed. An example system to dispense fluid for a grinder/polisher includes: a fluid dispenser having: a fluid reservoir to store a fluid, and a nozzle configured to dispense the fluid onto a grinding/polishing surface; a temperature sensor configured to output a temperature signal indicative of a temperature of the grinding/polishing surface during a grinding or polishing operation; and a processor configured to: compare the temperature signal to a threshold; and send a dispense signal to the fluid dispenser when the temperature signal satisfies the predetermined threshold, wherein the fluid dispense is configured to dispense the fluid in response to the dispense signal.

Abstract: Provided is a method of double-side polishing a semiconductor wafer, which can suppress variation in the polishing quality by providing for changes in the polishing environment during polishing.

Abstract: In a substrate processing system, such as a chemical mechanical system, updated controller configuration data is obtained for a plurality of liquid flow controllers of the substrate processing system. Each of a plurality of liquid flow controllers (LFCs) coupled to an Ethernet for Control Automation Technology (EtherCAT) bus automatically downloads a copy of the updated controller configuration data through the EtherCAT bus. Each of the plurality of liquid flow controllers controls fluid flow of a separate fluid line from a plurality of fluid lines in the substrate processing system, fluid flow through the plurality of fluid lines is controlled using the plurality of liquid flow controllers having the updated controller configuration data.

Abstract: A grinding device is operated by grinding of a surface of the workpiece with at least one grinding medium while recording actual data of the surface after grinding with at least one data collection device. Actual data recorded during grinding is then compared with target data stored in an electronic memory in an electronic data processing device. Based on the comparison, adjustments are made to at least one grinding parameter if a deviation of the actual data from the target data exceeds a predetermined limit.

Abstract: A grinding machine including one or more grinding wheels has a workpiece holder that releasably holds a crankshaft and is configured to rotate the crankshaft about a longitudinal axis; a spindle assembly, that is moveable in at least two directions, including a spindle shaft and a grinding wheel attached to the spindle shaft; and an acoustic emission sensor coupled to the grinding machine, such that the grinding machine is configured to monitor an output signal from the acoustic emission sensor, move the grinding wheel into contact with the crankshaft at a first angular position, detect contact between the grinding wheel and the crankshaft based on the output signal, determine a position of the grinding wheel based on the detected contact between the grinding wheel and the crankshaft, move the grinding wheel away from the crankshaft, rotate the crankshaft a defined angular amount, move the grinding wheel into contact with the crankshaft at a second angular position, determine a position of the grinding wheel

Abstract: Methods and systems for measuring a component of a drug delivery or storage device are described. The method comprises providing a light source in an opposing relationship with an optical imaging sensor; positioning a sample component on a positioning stage located between the at least one light source and at least one opposing optical imaging sensor; and illuminating, with the at least one light source, the sample component. The controller is operable to capture an image of the component, determine the location of a first outer edge point PI of the captured image; rotate the sample component relative to the optical image sensor, and collect n images separated from each other by x degrees of rotation, wherein n*x is ?360 degrees. The controller may compare a measured position of the at least one outer edge point PI between the captured images to determine a degree or circular runout.

Abstract: A polishing apparatus includes a polisher that polishes a target object to be polished. A holder is rotatable while holding the target object to be polished. Multiple concentric elastic members around the center of a rotation shaft of the holder are provided on the holder and elastically press the target object to be polished against the polisher. Multiple sensors are provided in the elastic members and detect vibration from a polishing surface of the target object to be polished. The detected vibration allows the polishing apparatus to create an unevenness map of the polishing surface and correspondingly actuate the concentric elastic members to remove the unevenness, according to a control sequence set in advance, based on the detected vibration, in a polishing control program to control the concentric elastic members.

Abstract: A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. The silicon layer has a substantially uniform thickness. The silicon layer is polished to smooth the silicon layer such that the thickness is substantially uniform after polishing.

Abstract: A lapping method of a MAMR head slider includes a first lapping process: controlling the lapping plate to spin at a first speed, and controlling the MAMR head slider to move at a first moving speed, and applying a first force to the MAMR head slider; and a second lapping process: controlling the lapping plate to spin at a second speed that is lower than the first speed, and controlling the MAMR head slider to move at a second moving speed that is lower than the first moving speed, and applying a second force that is lower than the first force to the MAMR head slider; and the second lapping process includes a final lapping process section, and the second force in the final lapping process being zero. In such a way, lapping marks on the ABS are reduced to improve the roughness and the reliability.

Abstract: A computer may display on a graphical user interface (GUI) a component library including a set of components relating to a compressed air system. The GUI may have a modeling interface for configuring a virtual model using the set of components. The computer may simulate the virtual model to determine one or more optimizations to the compressed air system. The computer may also determine the cost of implementing the compressor system optimization.

Abstract: A wafer thinning method and a wafer structure are provided. In the wafer thinning method, a to-be-thinned wafer is provided, and the to-be-thinned wafer is grinded on a rear surface of the to-be-thinned wafer. Then, a first planarization process is performed on a rear surface of the grinded wafer to restore surface flatness of the grinded wafer, and a second planarization process is performed on a rear surface of the wafer obtained after the first planarization process is performed until a target thinned thickness is reached.

Abstract: A mobile steel grit dryer used to dry steel grit may be configured with a number of different functions and features to assist a contractor in performing steel or other structure maintenance when using steel grit in resurfacing the structure. The steel grit dryer may be configured with a heat process vacuum bypass so that an off-board vacuum, such as a vacuum on a grit recycling system, may be utilized as opposed to having an onboard vacuum. The dryer may include multiple modes so that an operator may use different modes for different environmental conditions. An exoframe may provide for better durability when being transported to different jobsites. A variety of automation and safety features may also be provided to simplify and improve safety for operators.

Abstract: Methods for polishing semiconductor substrates that involve adjusting the finish polishing sequence based on the pad-to-pad variance of the polishing pad are disclosed.

Abstract: An engine block for an internal combustion engine of a motor vehicle has a cylinder within which a piston can be movably accommodated between a top dead center and a bottom dead center and has a cylinder bore, the internal cylinder diameter of which expands in the direction of the bottom dead center. The internal cylinder diameter expands only below the region in which a piston system change takes place during operation of the internal combustion engine. The internal cylinder diameter tapers from the top dead center to the region.

Abstract: A method of processing a substrate includes subjecting a substrate to processing that modifies a thickness of an outer layer of the substrate, measuring a spectrum of light reflected from the substrate during processing, reducing the dimensionality of the measured spectrum to generate a plurality of component values, generating a characterizing value using an artificial neural network, and determining at least one of whether to halt processing of the substrate or an adjustment for a processing parameter based on the characterizing value. The artificial neural network has a plurality of input nodes to receive the plurality of component values, an output node to output the characterizing value, and a plurality of hidden nodes connecting the input nodes to the output node.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to mask structures and methods of manufacture. The method includes determining a plane through a frontside surface and a backside surface of a mask, each plane representing a flatness of the frontside surface and the backside surface, respectively; subtracting, using at least one computing device, a difference between the plane of the frontside surface and the plane of the backside surface to find a thickness variation; generating, using the at least one computing device, a fitting to fit the thickness variation; and subtracting, using the at least one computing device, the fitting from the thickness variation to generate a residual structure for collecting a residual flatness measurement.

Abstract: A grinding machine includes a manual rotating handle provided with a rotation detector that outputs a rotation detection signal so that the position of a grinding wheel with respect to a workpiece can be relatively moved in accordance with the rotation detection signal. The grinding machine further includes a grinding wheel, a moving apparatus that moves the position of the grinding wheel with respect to a workpiece W, a proximity detector that outputs a proximity detection signal corresponding to a relative position or a relative distance between the workpiece and the grinding wheel, a manual rotating handle provided with a rotation detector, and a control apparatus that controls the moving apparatus based on the rotation detection signal. The manual rotating handle is provided with a rotational-torque varying apparatus. The control apparatus controls the rotational-torque varying apparatus based on the proximity detection signal.

Abstract: A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.

Abstract: A process of manufacturing a single-crystal silicon-carbide substrate, includes contacting a surface of a single-crystal silicon-carbide plate with a surface of a polishing pad; and moving the surface of the single-crystal silicon-carbide plate relative to the surface of the polishing pad while supplying a polishing solution to the surface the polishing pad, to polish the surface of the single-crystal silicon-carbide plate. The polishing pad comprises a non-woven fabric or a porous resin. The polishing solution comprises an oxidizing agent which comprises a transition metal having oxidation-reduction potential of 0.5 V or more. Neither the polishing pad nor the polishing solution comprises an abrasive.

Abstract: A polishing article has a polishing surface and an aperture, the aperture including a first section and a second section. The polishing article includes a projection extending inwardly into the aperture. The polishing article includes a lower portion on a side of the first surface farther from the polishing surface. A window has a first portion positioned in the first section of the aperture and a second portion extending into the second section of the aperture. The window has a second surface substantially parallel to the polishing surface. A first adhesive adheres the first surface of the projection to the second surface of the window to secure the window to the projection and a second adhesive of different material composition than the first adhesive. The second adhesive is positioned laterally between the second portion of the window and the lower portion of the polishing article.

Abstract: A method of manufacturing a SiC substrate of the invention includes at least an oxide film-forming process of forming an oxide film (10) to cover a surface (1a) of the SiC substrate (1); and a planarization process of polishing the SiC substrate (1) from an oxide film side (10) in accordance with a CMP method so as to remove the oxide film (10), and of polishing the surface (1a) of the SiC substrate (1) to planarize the surface (1a).

Abstract: A pressure control assembly for a carrier head of a polishing apparatus includes a pressure supply line configured to fluidically connect to a chamber of a carrier head, a sensor to responsive to pressure in the chamber and configured to generate a signal representative of the pressure, and a pneumatic control unit configured to receive the signal, to control a pressure applied to the pressure supply line, and to record the signal in a non-transitory storage media of a storage device removably attached to the pneumatic control unit.

Abstract: Provided herein are multi-layer stacks for use in extreme ultraviolet lithography tailored to achieve optimum etch contrast to shrink features and smooth the edges of features while enabling use of an optical leveling sensor with little or reduced error. The multi-layer stacks may include an atomically smooth layer with an average local roughness of less than a monolayer, and one or more underlayers, which may be between a target layer to be patterned and a photoresist. Also provided are methods of depositing multi-layer stacks for use in extreme ultraviolet lithography.

Abstract: Values are selected for a plurality of controllable parameters of a chemical mechanical polishing system that includes a carrier head with a plurality of zones to apply independently controllable pressures on a substrate. Data is stored relating variation in removal profile on a front surface of the substrate to variation in the controllable parameters, the data including removal at a plurality of positions on the front surface of the substrate, there being a greater number of positions than chambers. A value is determined for each parameter of the plurality of controllable parameters to minimize a difference between a target removal profile and an expected removal profile calculated from the data relating variation in removal profile on a front surface of the substrate to variation in the parameters. The value for each parameter of the plurality of controllable parameters is stored.

Abstract: A method of polishing a wafer is disclosed that includes determining a removal profile. The wafer is measured to determine a starting wafer profile and then the wafer is polished. The wafer is again measured after being polished to determine a polished wafer profile. The starting wafer profile and the polished wafer profile are compared to each other to determine the removal profile by computing the amount and shape of material removed from the first wafer during polishing.

Abstract: A chemical mechanical polishing system includes a carrier head having a flexible membrane and a chamber to apply pressure to the flexible membrane, a pressure control unit, a pressure supply line connecting the pressure control unit to the chamber, and a sensor located along the pressure supply line to detect a contaminant in the pressure supply line.

Abstract: Embodiments described herein use closed-loop control (CLC) of conditioning sweep to enable uniform groove depth removal across the pad, throughout pad life. A sensor integrated into the conditioning arm enables the pad stack thickness to be monitored in-situ and in real time. Feedback from the thickness sensor is used to modify pad conditioner dwell times across the pad surface, correcting for drifts in the pad profile that may arise as the pad and disk age. Pad profile CLC enables uniform reduction in groove depth with continued conditioning, providing longer consumables lifetimes and reduced operating costs.

Abstract: A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP process on the feature using a polish recipe to substantially achieve a within-wafer thickness uniformity of the feature. The polish recipe is determined based on the thickness profile.

Abstract: Disclosed is a method and apparatus for polishing an edge of an article involving providing at least one carrier including: first and second opposing surfaces defining a groove, the first and second opposing surfaces being spaced apart in a first direction to receive the edge; and magnetic field generator configured to provide a magnetic field in the groove to stiffen magnetorheological (MR) fluid disposed in the groove to provide at least one polishing zone; receiving the edge in the polishing zone; and driving relative motion between the at least one carrier and the edge in a second direction substantially transverse to the first direction.

Abstract: An apparatus and method for providing target thickness and surface profile uniformity control of a multi-head chemical mechanical polishing (CMP) process is disclosed. An exemplary method includes providing at least two wafers; determining a surface profile of each of the at least two wafers; determining an operation mode for a chemical mechanical polishing (CMP) process based on the surface profiles of the at least two wafers; determining a CMP polishing recipe for each of the at least two wafers based on the operation mode; and performing the CMP process on the at least two wafers based on the determined CMP polishing recipes.

Abstract: The method for machining a series of workpieces (21) via at least one machining jet includes the following steps: each workpiece (21) is associated with an identifier for uniquely identifying the workpiece, during the machining of a respective workpiece, the temporal characteristic of the machining jet is detected by at least one sensor (30), the detected temporal characteristic is evaluated so as to obtain at least one comparative value, and for detecting incorrect machining, the at least one comparative value is compared with at least one threshold value.

Abstract: A master servo motor and a slave servo motor that synchronously drive for rotation a master main spindle provided with a center that supports one end of a work piece and a slave main spindle provided with a center that supports the other end of the work piece are included. Before grinding, a slip detection cycle that detects a limit current value for the servo motors, at which the work piece and the centers slip, is executed and, during grinding, a grinding condition is changed to prevent a slip between the work piece and the centers in advance at the time when any one of current values of the servo motors has reached a slip threshold value set on the basis of the limit current value.

Abstract: An object of the present invention is to provide a polishing pad that is prevented from causing an end-point detection error due to a reduction in light transmittance from the early stage to the final stage of the process, and to provide a method of producing a semiconductor device with the polishing pad. The present invention is directed to a polishing pad, comprising a polishing layer comprising a polishing region and a light-transmitting region, wherein a polishing side surface of the light-transmitting region is subjected to a surface roughness treatment, and the light-transmitting region has a light transmittance of 40% to 60% at a wavelength of 600 nm before use.

Abstract: A waterjet system in accordance with a particular embodiment includes a pressurizing device configured to pressurize a fluid, a cutting head downstream from the pressurizing device, and a catcher positioned to collect a jet from the cutting head. The system can further include a treatment assembly configured to treat a feed fluid to the pressurizing device and/or a byproduct fluid from the catcher, such as by removing submicron colloidal particles from the feed fluid and/or from the byproduct fluid. For example, the treatment assembly can include a coagulation unit, such as a chemical coagulation unit or an electrocoagulation unit, configured to coagulate the submicron colloidal particles. The pressurizing device, the cutting head, and the treatment assembly can be at different respective portions of a fluid-recycling loop.

Abstract: A polishing apparatus polishes a periphery of a substrate. This polishing apparatus includes a rotary holding mechanism configured to hold the substrate horizontally and rotate the substrate, plural polishing head assemblies provided around the substrate, plural tape supplying and recovering mechanisms configured to supply polishing tapes to the plural polishing head assemblies and recover the polishing tapes from the plural polishing head assemblies, and plural moving mechanisms configured to move the plural polishing head assemblies in radial directions of the substrate held by the rotary holding mechanism. The tape supplying and recovering mechanisms are located outwardly of the plural polishing head assemblies in the radial directions of the substrate, and the tape supplying and recovering mechanisms are fixed in position.

Abstract: Methods and apparatuses for calibrating eddy current sensors. A calibration curve is formed relating thickness of a conductive layer in a magnetic field to a value measured by the eddy current sensors or a value derived from such measurement, such as argument of impedance. The calibration curve may be an analytic function having infinite number terms, such as trigonometric, hyperbolic, and logarithmic, or a continuous plurality of functions, such as lines. High accuracy allows the omission of optical sensors, and use of eddy current sensors for endpoint detection, transition call detection, and closed loop control in which a process parameter is changed based on the measured magnetic flux density change in one or more processing zones.

Abstract: A lens processing system used for removing a lens blank (98, 110) from an edging block (40). The system includes an elongated collet (22) that engages the mating edging block (40). The block (40) includes an enlarged groove (41) that receives a pair of blades (65, 66) extended upwardly from the floor (75) of the collet (22). Each lens blank (98,110) is formed to include a series of surface markings (191,192) to verify proper functioning of the edging machine that forms a finished lens. Each lens blank also includes a series of circular markings (117,133) arranged in diagonal rows to verify the accurate drilling of bores with the lens blank (98,110).

Abstract: Methods and systems for evaluating and/or increasing CMP pad dresser performance are provided. In one aspect, for example, a method of identifying overly-aggressive superabrasive particles in a CMP pad dresser can include positioning a CMP pad dresser having a plurality of superabrasive particles on an indicator substrate such that at least a portion of the plurality of superabrasive particles of the CMP pad dresser contact the indicator substrate, and moving the CMP pad dresser across the indicator substrate in a first direction such that the portion of the plurality of superabrasive particles create a first marking pattern on the substrate, wherein the first marking pattern identifies a plurality of working superabrasive particles from among the plurality of superabrasive particles.

Abstract: Systems and methods are provided for use in processing and/or grinding wafers or other work products. Some embodiments provide a grinding apparatus that comprise a base casting; a rotary indexer configured to rotate within the base casting; a work spindle secured with the rotary indexer; a work chuck coupled with the first work spindle, wherein the first work spindle is configured to rotate the first work chuck; a bridge casting secured relative to the base casting, wherein the bridge casting bridges across at least a portion of the rotary indexer and is supported structurally forming a closed stiffness loop; a grind spindle secured with the bridge casting; and a grind wheel cooperated with the grind spindle, wherein the bridge casting secures the grind spindle.

Abstract: Various embodiments of a semiconductor processing fluid delivery system and a method delivering a semiconductor processing fluid are provided. In aspect, a system for delivering a liquid for performing a process is provided that includes a first flow controller that has a first fluid input coupled to a first source of fluid and a second flow controller that has a second fluid input coupled to a second source of fluid. A controller is provided for generating an output signal to and thereby controlling discharges from the first and second flow controllers. A variable resistor is coupled between an output of the controller and an input of the second flow controller whereby the output signal of the controller and the resistance of the variable resistor may be selected to selectively control discharge of fluid from the first and second flow controllers.

Abstract: A grinding system includes a welding gun movable relative to a workpiece. A pair of clamp devices move relatively toward each other to clamp a workpiece. A welding tip is disposed on one of the pair of clamp devices. A detector detects a relative movement amount of the welding tip with respect to the other clamp device. A dresser grinds the welding tip. While the dresser is grinding the welding tip, a determinator determines whether to make the dresser end grinding the welding tip based on the movement amount detected by the detector. When the determinator determines to make the dresser end grinding the welding tip, an instructor instructs the dresser to end grinding the welding tip.

Abstract: A grinding system includes a period determiner that determines, on the basis of a torque of a grinder of a dresser that grinds a welding tip, whether the current period is a grinding period in which the grinder is grinding the welding tip or a non-grinding period in which the grinder is not grinding the welding tip; and an anomaly detector that detects anomalies that are associated beforehand with each of the grinding period and the non-grinding period.

Abstract: A wafer polishing apparatus configured to polish simultaneously both surfaces of a wafer by pressing and rubbing the wafer, while holding the wafer with: a lower turn table having a flat polishing-upper-surface rotationally driven; an upper turn table having a flat polishing-lower-surface rotationally driven, the upper turn table being arranged with facing to the lower turn table; and a carrier having a wafer-holding bole for holding the wafer, wherein the polishing is performed while measuring a thickness of the wafer through a plurality of openings provided between a rotation center and an edge of the upper turn table or the lower turn table, and switching a polishing slurry with a polishing slurry having a different polishing rate during the polishing of the wafer. As a result, the wafer polishing apparatus can manufacture a wafer having a high flatness and a high smoothness at high productivity and high yield.

Abstract: A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a substrate holding apparatus configured to hold the substrate and to press the substrate against the polishing surface, and a controller. The substrate holding apparatus includes an elastic membrane configured to form a substrate holding surface which is brought into contact with the substrate, a carrier provided above the elastic membrane, at least one pressure chamber formed between the elastic membrane and the carrier, and an infrared light detector configured to measure thermal energy from the elastic membrane. The controller calculates an estimate value of a temperature of the elastic membrane using a measured value of the infrared light detector.

Abstract: A method and method for processing grit used for abrasive blasting may include receiving grit blasted onto a surface, where the grit includes moisture content. Air in which the grit being recycled is being processed may be heated. The moisture content may be evaporated from the grit using the heated air to produce dry recycled grit. The dried recycled grit may be stored.