Silicon Oxynitride, Silicon Carbonitride, Or Silicon Oxycarbonitride Containing (i.e., Siaobnc, Siacbnc, Or Siaobccnd) Patents (Class 501/96.5)
  • Patent number: 8664135
    Abstract: An article including a monolithic crucible body comprising silicon oxynitride (SixNyO, wherein x>0 and y>0), wherein the silicon oxynitride extends throughout the entire volume of the monolithic crucible body.
    Type: Grant
    Filed: December 28, 2011
    Date of Patent: March 4, 2014
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventors: Edmund A. Cortellini, Christopher J. Reilly, Vimal K. Pujari
  • Publication number: 20130157836
    Abstract: A silicon nitride material is disclosed which has properties necessary for efficient operation of a corona discharge igniter system in an internal combustion gas engine allowing an increase in fuel efficiency of over 10%. The material is disclosed in a range of compositions, all of which exhibit high dielectric strengths, high mechanical strength, thermal shock resistance and fracture toughness, low dielectric constant and loss tangent and electrical resistivity, all of which significantly increase the efficiency of the igniter system over current state of the art alumina insulators. Moreover, the materials retain their dielectric strength and structural integrity at elevated temperatures, up to 800° C.-1000° C. One embodiment comprises a sintered silicon nitride process comprising powder batching, binder removal and sintering. In the preferred embodiment the method of manufacture for silicon nitride is an SRBSN process comprising powder batching, powder pressing, binder removal, nitriding and sintering.
    Type: Application
    Filed: December 16, 2011
    Publication date: June 20, 2013
    Inventor: Biljana Mikijelj
  • Patent number: 8357313
    Abstract: The invention relates to a new class of luminescent substances (phosphorous) based on an universally dopable matrix made of an amorphous, at the most partially crystalline network of the elements P, Si, B, Al and N, preferably the composition Si3B3N7. Optical excitation and emission can be varied in this system over the entire practically relevant field by incorporation of any cationic activators, alone or in combination, but also by incorporation of oxygen as anionic component. This opens up the entire spectrum of use of luminescent substances, such as illumination systems or electronic screens.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: January 22, 2013
    Assignee: Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.
    Inventors: Martin Jansen, Hasan Cakmak
  • Patent number: 8354353
    Abstract: Composite materials composed of cubic boron nitride (cBN) and a matrix component of various ceramic oxides, nitrides, and solid solutions of matrix materials as well as whisker reinforcements. Methods of manufacture and their use in high performance machining of ferrous metals are also claimed and disclosed.
    Type: Grant
    Filed: September 17, 2009
    Date of Patent: January 15, 2013
    Assignee: Diamond Innovations, Inc.
    Inventors: Malik Abds-Sami, Stephen Dole
  • Publication number: 20110070453
    Abstract: A laminate is provided for a transparent conductive film. The transparent conductive film includes a transparent substrate that has surfaces on which a laminate composed of multiple layers is formed. The laminate has a conductive layer that has an underside to which an underside coating layer made of silicon oxy-nitride is applied so as to make the transparent conductive film showing transparency in visible light and having a b* value of color coordinates between ?10?b*?2.5 and also reducing light reflection.
    Type: Application
    Filed: September 21, 2009
    Publication date: March 24, 2011
    Inventors: Chien-Chin Mai, Yeong-Feng Wang, Jui-Tang Yin, Chao-Hung Wang
  • Patent number: 7825052
    Abstract: A refractory material used in refractory furnace liners, combustion chambers, baffles and artificial fire logs includes alumina silicate; an additive comprising at least one of silicon carbide, silicon nitride, boron carbide, boron nitride and silicon carbo-nitride; and a binder. The refractory material is light weight, has a high noise reduction capacity, is fire resistant and has a reduced silica content. In a most preferred embodiment, the additive makes up 50.0% to 55.0% of the material by weight, the binder makes up 4.5% to 5.0% of the material by weight and the linear shrinkage of the material is no greater than 3.5% at 2600° F. A preferred binder is colloidal silica although many others are suitable. Preferably, the material is free of cellulose fiber and sodium silicate.
    Type: Grant
    Filed: March 23, 2007
    Date of Patent: November 2, 2010
    Inventors: Suhas N. Patil, Leonard J. Reinhart, Richard F. Wilk, Jr.
  • Publication number: 20100215305
    Abstract: Each of an outer ring, an inner ring, and a ball is a rolling contact member formed of a ?-sialon sintered body inexpensive, capable of reliably ensuring sufficient durability, and capable of being used in an application where an imposed load is changed abruptly. The sintered body contains as a main component ?-sialon represented by a compositional formula of Si6-ZAlZOZN8-Z and satisfying 0.1?Z?3.5, and has a remainder formed of an impurity. The rolling contact member has a Young's modulus of 180 GPa or greater but 270 GPa or smaller.
    Type: Application
    Filed: October 16, 2008
    Publication date: August 26, 2010
    Inventors: Katsutoshi Muramatsu, Masaaki Honda, Hikaru Ishida, Nobuyuki Ninoyu
  • Patent number: 7687421
    Abstract: The invention provides a method of synthesizing a Si/C/N/Ea/Fb/Gc/O multielement nanopowder that is directly suitable for sintering, E, F, and G representing three distinct metallic elements other than Si, and at least one of a, b, and c being non-zero. The nanopowder is obtained by laser pyrolysis of an aerosol comprising at least one metal precursor, hexamethyldisilazane Si2C6NH19 used as the sole solvent for said at least one metal precursor, and silane SiH4. Each grain of the resulting nanopowder contains all of the elements Si, C, N, Ea, Fb, Gc, and O, and the chemical composition of the nanopowder in terms of equivalent stoichiometric compounds is such that its free carbon content is less than 2% by weight and its SiO2 content is less than 10% by weight. The use of this nanopowder for fabricating a Si3N4/SiC composite ceramic.
    Type: Grant
    Filed: January 27, 2005
    Date of Patent: March 30, 2010
    Assignee: Commissariat A l'Energie Atomique
    Inventors: Romuald Dez, Nathalie Herlin-Boime
  • Patent number: 7658863
    Abstract: A Si—C—O composite powder is obtained by curing a reactive silane or siloxane having crosslinkable groups through heat curing or catalytic reaction into a crosslinked product and sintering the crosslinked product in an inert gas stream at a temperature of 700-1,400° C. into an inorganic state. It exhibits satisfactory cycle performance when used as the negative electrode material for non-aqueous electrolyte secondary cells.
    Type: Grant
    Filed: July 21, 2005
    Date of Patent: February 9, 2010
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Mikio Aramata, Satoru Miyawaki, Hirofumi Fukuoka
  • Patent number: 7498284
    Abstract: A nitride glass with the general formula ?x?y?z is provided wherein ? is a glass modifier comprising at least one electropositive element. ? comprises Si, B, Ge, a and/or Al. ? is N or N together with O, whereby the atomic ratio of O:N is in the interval from 65:35 to 0:100.
    Type: Grant
    Filed: January 14, 2004
    Date of Patent: March 3, 2009
    Assignee: Diamorph AB
    Inventor: Saeid Esmaeilzadeh
  • Publication number: 20090018008
    Abstract: Process for the preparation of a ceramic wherein: 50% to 75% by weight of a compound intended to form a conductive phase, and 25 % to 50% by weight of one or more materials allowing the formation of insulating phases composed of silicon nitride and modified silicon oxynitride are mixed in a receptacle containing a liquid after a thermal treatment leading to sintering of the ceramic; this mixture is subjected to grinding, drying and sieving operations; this mixture is pressed; and this mixture is sintered so as to obtain a ceramic with a porosity of between 0 and 30%. The sintering is carried out under a pressure of at least 50 bar of a gas which is inert towards the constituents of the mixture. Ceramic thus obtained and spark plug comprising it.
    Type: Application
    Filed: June 18, 2008
    Publication date: January 15, 2009
    Applicant: VIBRO METER FRANCE
    Inventors: Aurelien JANKOWIAK, Philippe BLANCHART, Frederic TRENIT
  • Patent number: 7446066
    Abstract: A method of making a composite sintered silicon nitride/silicon carbide body, including mixing a predetermined amount of silicon nitride powder with a predetermined amount of silicon carbide powder, heat-treating the resultant mixed powder at a temperature of between about 800 and 1500 degrees Celsius in a substantially nitrogen sintering atmosphere, and producing a thin film of silica around individual silicon nitride and silicon carbide grains. The thin film of silica is useful in retarding the diffusion of oxygen to the silicon nitride particles, slowing their oxidation. The pressure of the sintering atmosphere is not substantially greater than atmospheric pressure.
    Type: Grant
    Filed: April 12, 2006
    Date of Patent: November 4, 2008
    Inventor: Jai-Lin Sun
  • Publication number: 20080234123
    Abstract: A refractory material used in refractory furnace liners, combustion chambers, baffles and artificial fire logs includes alumina silicate; an additive comprising at least one of silicon carbide, silicon nitride, boron carbide, boron nitride and silicon carbo-nitride; and a binder. The refractory material is light weight, has a high noise reduction capacity, is fire resistant and has a reduced silica content. In a most preferred embodiment, the additive makes up 50.0% to 55.0% of the material by weight, the binder makes up 4.5% to 5.0% of the material by weight and the linear shrinkage of the material is no greater than 3.5% at 2600° F. A preferred binder is colloidal silica although many others are suitable. Preferably, the material is free of cellulose fiber and sodium silicate.
    Type: Application
    Filed: March 23, 2007
    Publication date: September 25, 2008
    Inventors: Suhas N. Patil, Leonard J. Reinhart, Richard F. Wilk
  • Patent number: 7407903
    Abstract: The present invention relates to a material for use at temperatures exceeding 1200° C. and in oxidizing atmospheres consisting generally of an alloy between a metal, aluminium (Al) and carbon (C) or nitrogen (N). The invention is characterized in that the alloy has a composition MZAlYXW where M essentially consists of titanium (Ti), chromium (Cr) and/or niobium (Nb) and where X is carbon (C) or where X is nitrogen (N) and/or carbon (C) when M is titanium (Ti); and in that z lies in the range of 1.8 to 2.2, y lies in the range of 0.8-1.2 and w lies in the range 0.8-1.2, and wherein a protective oxide layer of Al2O3 is formed after heating to the mentioned temperature.
    Type: Grant
    Filed: January 27, 2004
    Date of Patent: August 5, 2008
    Assignee: Sandvik Intellectual Property AB
    Inventors: Mats Sundberg, Kjell Lindgren, Tamer El-Raghy, Gustav Malmqvist
  • Patent number: 7132061
    Abstract: A conductive silicon nitride composite sintered body having an average grain size of 100 nm or less and whose relative roughness (Ra) after electric discharge machining is 0.3 ?m or less can be obtained by grinding/mixing a silicon nitride powder and a metal powder together until the average particle size of the silicon nitride powder becomes 30 nm or less, and subsequently by molding and sintering. It is preferable that the crushing/mixing is continued until it is apparent that a peak of added metal in an X-ray diffraction pattern has disappeared during the crushing/mixing.
    Type: Grant
    Filed: January 17, 2002
    Date of Patent: November 7, 2006
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Masashi Yoshimura
  • Patent number: 7109137
    Abstract: The present invention provides a method for making a microporous ceramic material and includes the steps of (a) preparing a starting material for firing comprising a nonoxide ceramic precursor containing silicon as an essential component; (b) heating the starting material for firing in an atmosphere containing at least 1 mol % of hydrogen so as to form microporous ceramic product; and (c) cooling the microporous ceramic product.
    Type: Grant
    Filed: April 27, 2005
    Date of Patent: September 19, 2006
    Assignees: Noritake Co., Limited, Chubu Electric Power Co., Inc.
    Inventors: Balagopal N. Nair, Yasunori Ando, Hisatomi Taguchi, Shigeo Nagaya, Kiyoshi Komura
  • Patent number: 6964932
    Abstract: A compound having a space spinel structure and the formula Si3-x Cx N4 wherein 0<x?1. An example of the compound is spinel silicon carbonitride. The compound of the invention may be made by providing a silicon carbo-diimide compound and subjecting the compound to elevated temperature and pressure conditions.
    Type: Grant
    Filed: August 27, 2002
    Date of Patent: November 15, 2005
    Inventors: Andreas Zerr, Edwin Rolf Balduin Kroke, Ralf Peter Riedel, Marcus Rolf Schwarz
  • Patent number: 6776927
    Abstract: An oxynitride phosphor activated by a rare earth element, represented by the formula CaxSi12−(m+n)Al(m+n)OnN16−n: EuyDyz, wherein stabilizing metal (Ca) is substituted partially by Eu or Eu and Dy where 0.3<x<1.5, 0.01<y<0.7, 0≦z<0.1, 0.6<m<3.0 and 0<n<1.5.
    Type: Grant
    Filed: April 8, 2003
    Date of Patent: August 17, 2004
    Assignee: National Institute for Materials Science
    Inventors: Mamoru Mitomo, Tadashi Endo, Kyouta Ueda, Masakazu Komatsu
  • Publication number: 20040101761
    Abstract: A solid electrolyte, a method of manufacturing the same, and a lithium battery and a thin-film battery that employ the solid electrolyte are provided. The solid electrolyte contains nitrogen to enhance the ionic conductivity and electrochemical stability of batteries.
    Type: Application
    Filed: September 8, 2003
    Publication date: May 27, 2004
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Young-Sin Park, Seok-Soo Lee, Young-Gu Jin
  • Patent number: 6709999
    Abstract: A molded part of a ceramic material derived from polymers includes a composite body of a single-phase or multi-phase, amorphous, partially crystalline or crystalline matrix of silicon carbide (SiC), silicon nitride (Si3N4), silicon dioxide (SiO2) or mixtures thereof. The matrix contains graphite inclusions and the density of the ceramic material is at least 85% of the theoretical value. The molded part is produced by subjecting a mixture formed of a polymer component in an amount of 30 to 80 wt. % referred to the total weight of the mixture, fillers in an amount of 0 to 30 wt. % and graphite in an amount of 10 to 70 wt. %, to a forming process with heating to effect crosslinking of the polymer components, followed by a pyrolysis process. In particular, the molded parts are produced from polymers of the group including polysilanes, polysiloxanes, polysilazanes or polycarbosilanes. A process for producing ceramic molded parts and a sliding element having a molded part are also provided.
    Type: Grant
    Filed: June 18, 2001
    Date of Patent: March 23, 2004
    Assignee: SGL Carbon AG
    Inventors: Peter Greil, Oliver Dernovsek, Hans-Michael Güther, Ulrich Wislsperger
  • Publication number: 20040053769
    Abstract: The invention relates to a silicone nitride based substrate for semi-conductor components, said substrate containing silicon nitride (Si3N4), silicon carbide (SIC) and silicon oxynitride(Si2N20) as crystalline phases. The silicon phase content is less or equal to 5%, the shrinkage during production is less than 5% and the open porosity of the substrate is less than 15% vol. %. The invention also relates to a method for the production and use of said substrate as an element of semi-conductor components, particularly thin film solar cells, and semi-conductor components which contain said substrate.
    Type: Application
    Filed: October 9, 2003
    Publication date: March 18, 2004
    Inventors: Gerhard Wtting, Peter Woditsch, Christian Hssler, Gunther Stollwerck
  • Patent number: 6632379
    Abstract: A sialon type phosphor in the form of a powder comprising at least 40 wt % of &agr;-sialon represented by the formula (Cax,My)(Si,Al)12(O,N)16 (where M is at least one metal selected from the group consisting of Eu, Tb, Yb and Er, 0.05<(x+y)<0.3, 0.02<x<0.27 and 0.03<y<0.3) and having a structure such that Ca sites of Ca-&agr;-sialon are partially substituted by other metal M, at most 40 wt % of &bgr;-sialon, and at most 30 wt % of unreacted silicon nitride.
    Type: Grant
    Filed: June 6, 2002
    Date of Patent: October 14, 2003
    Assignee: National Institute for Materials Science
    Inventors: Mamoru Mitomo, Tadashi Endo, Kyouta Ueda, Masakazu Komatsu
  • Patent number: 6541843
    Abstract: An anti-reflective coating material layer is provided that has a relatively high etch rate such that it can be removed simultaneously with the cleaning of a defined opening in a relatively short period of time without affecting the critical dimensions of the opening. A method of forming such a layer includes providing a substrate assembly surface and using a gas mixture of at least a silicon containing precursor, a nitrogen containing precursor, and an oxygen containing precursor. The layer is formed at a temperature in the range of about 50° C. to about 600° C. Generally, the anti-reflective coating material layer deposited is SixOyNz:H, where x is in the range of about 0.39 to about 0.65, y is in the range of about 0.02 to about 0.56, z is in the range of about 0.05 to about 0.33, and where the atomic percentage of hydrogen in the inorganic anti-reflective coating material layer is in the range of about 10 atomic percent to about 40 atomic percent.
    Type: Grant
    Filed: August 24, 2001
    Date of Patent: April 1, 2003
    Assignee: Micron Technology, Inc.
    Inventors: Zhiping Yin, Gurtej Sandhu
  • Publication number: 20020154878
    Abstract: Germanium-silicon oxide, germanium-silicon oxynitride and silica-germania-titania materials and oxynitride materials suitable for fabricating optical waveguides for liquid crystal based cross-connect optical switching devices have a refractive index of from about 1.48 to about 1.52 at 1550 nm, and a coefficient of thermal expansion at room temperature of from about 3×10−6° C.−1 to about 4.4×10−6° C,−1. The compositions are adjusted so that the refractive index of the germanium-silicon oxide, germanium-silicon oxynitride or silica-germania-titania material is closely matched to the refractive index of a typical liquid crystal material whereby improved optical performance of a liquid crystal based cross-connect optical switching device is achieved.
    Type: Application
    Filed: July 27, 2001
    Publication date: October 24, 2002
    Inventors: Ikerionwu A. Akwani, Robert A. Bellman, Lynn B. Simpson
  • Patent number: 6402951
    Abstract: A filter media structure, which is capable of operating in the micro- and nanofiltration regime, offers: low cost, durability, high temperature and chemical resistance, high permeability, high flow rate, low pressure drop across the filter media, high mechanical strength, separation efficiency, and biocompatibility. The filter media structure is comprised of mixture of carbon or ceramic fibers and inorganic fiber whiskers generally having a diameter of from about 0.03 to about 5 microns. The present invention further provides a method of preparing a filter media structure comprising mixing together a) inorganic fibers; b) inorganic fiber whiskers; c) a water soluble binder, and optionally depositing a thin layer of pyrolytic carbon on the surface of the inorganic fibers and inorganic fiber whiskers comprising the filter media structure. The filter media structure is selected from the group consisting of a paper, felt and fabric.
    Type: Grant
    Filed: June 28, 2000
    Date of Patent: June 11, 2002
    Assignee: Hitco Carbon Composites, Inc.
    Inventors: Doug Wilson, Gary Pruett, Shrikant Awasthi
  • Publication number: 20020045529
    Abstract: A high pressure phase spinel type sialon represented by the chemical formula Si6−xAlxOxN8−x (0<x≦4.2), and a high pressure phase spinel type silicon oxynitride represented by the chemical formula Si3+xO2xN4 (═Si3N4.xSiO2, 0<x<1). Methods for their production by instantaneous pressing by means of an impulse wave.
    Type: Application
    Filed: March 12, 2001
    Publication date: April 18, 2002
    Applicant: Nat'l Institute for Research in
    Inventors: Toshimori Sekine, Hongliang He, Takamichi Kobayashi, Koji Kimoto, Mamoru Mitomo
  • Patent number: 6326325
    Abstract: A method for making silicon oxynitride comprising providing a vaporous gas stream of a compound selected from the group consisting of silazanes and siloxazanes. An enclosed, heated reaction site is also provided. The vaporous gas stream is delivered to the enclosed, heated reaction site in which the levels of oxygen are strictly controlled to promote the formation of silicon oxynitride particles.
    Type: Grant
    Filed: January 18, 2000
    Date of Patent: December 4, 2001
    Assignee: Corning Incorporated
    Inventors: David F. Dawson-Elli, Carlton M. Truesdale
  • Patent number: 6242626
    Abstract: The present invention relates to boron-containing carbosilanes, a process for their preparation, boron-containing oligo- or polycarbosilazanes, a process for their preparation and their use and silicon borocarbonitride ceramics and a process for their preparation.
    Type: Grant
    Filed: September 29, 1999
    Date of Patent: June 5, 2001
    Assignee: Bayer Aktiengesellschaft
    Inventors: Aloys Eiling, Ralf Riedel, Lutz Ruwisch
  • Patent number: 6232252
    Abstract: Provided with a method for preparing a silicon nitride ceramic with high strength and toughness including: mixing 0.2-0.9 wt % of carbon (C) powder with silicon nitride powder containing 5.0-6.0 wt % of yttria (Y2O3) and 1.0-2.0 wt % of alumina (Al2O3) added thereto as a sintering agent, and preparing a molding; subjecting the molding to a carbothermal reduction treatment at 1400-1500° C.; and gas pressure sintering the molding at a temperature above 1850° C. after the carbothermal reduction treatment.
    Type: Grant
    Filed: October 8, 1999
    Date of Patent: May 15, 2001
    Assignee: Korea Institute of Machinery and Materials
    Inventors: Hai Doo Kim, Byung Dong Han, Dong Soo Park
  • Patent number: 6180809
    Abstract: A boron and silicon oxynitride obtained by preparing a polyborosiloxane precursor, conducting nitriding pyrolysis of the precursor to obtain an amorphous boron and silicon oxynitride, and optionally conducting additional pyrolysis to obtain a crystallized boron and silicon oxynitride. The polyborosiloxane precursor is prepared by condensation, in the presence of a catalyst, of (2) a polychlorosilane represented by the formula R3R4SiCl2 in which the substituents R3 and R4 are identical or different and each represents a hydrogen atom, a chlorine atom, a linear or branched alkyl or alkenyl or alkynyl radical having 5 or less carbon atoms, or an aryl or aralkyl radical having 6 to 18 carbon atoms, with (2) an alkyl borate represented by the formula (R5O)3B in which R5 represents a linear or branched alkyl radical having 1 to 5 carbon atoms.
    Type: Grant
    Filed: February 28, 1997
    Date of Patent: January 30, 2001
    Assignee: L'Etat Francais, represente par le Delegue General pour l'Armement
    Inventors: Jean-Paul Pillot, Marc Birot, Jacques Dunogues, Yves Laurent, Paul L'Haridon, Laurence Bois