Abstract: An oxide superconductor article is provided having an oxide superconductor film having a thickness of greater than 0.5 microns disposed on a substrate, said article having a transport critical current density (Jc) of greater than or equal to about 105 A/cm2 at 77K, zero field. The oxide superconductor film is characterized by high Jc and high volume percent of c-axis epitaxial oxide grains, even with thicknesses of up to 1 micron.

Abstract: A compact dielectric resonator of high Qu, in which an electrode formed of an oxide superconducting material is provided on a surface of the dielectric so as to serve as an electrode. A dielectric filter, dielectric duplexer and a communications device, in which the compact resonator is incorporated, are also provided. The dielectric which constitutes the dielectric resonator of the present invention is preferably a Ba(Mg, Ma)03-based dielectric (wherein Ma is at least one pentavalent elemental metal but cannot be Ta alone), and the oxide superconducting electrode is formed of an oxide superconducting material selected from among a RE—M—Cu—O-based oxide superconducting material (wherein RE is a rare earth element and M is an alkaline earth metal element), a Bi—Sr—Ca—Cu—O-based oxide superconducting material (which encompasses those in which Bi is partially substituted by Pb), and a Tl—Ba—Ca—Cu—O-based oxide superconducting material.

Abstract: A composite superconductor having an interior component of multiple filaments of superconducting Bi-2223 sheathed in a Ag or Ag alloy material, and a RE, TI or Hg based superconductor surrounding the interior component.

Abstract: An epitaxial compound structure has a crystal structure including fluorite crystal on which is epitaxially grown a film of simple perovskite crystal with a (011) orientation.

Abstract: A biaxially textured face-centered cubic metal article having grain boundaries with misorientation angles greater than about 8° limited to less than about 1%. A laminate article is also disclosed having a metal substrate first rolled to at least about 95% thickness reduction followed by a first annealing at a temperature less than about 375° C. Then a second rolling operation of not greater than about 6% thickness reduction is provided, followed by a second annealing at a temperature greater than about 400° C. A method of forming the metal and laminate articles is also disclosed.

Abstract: A superconducting magnesium diboride (MgB2) thin film having c-axial orientation and a method and apparatus for fabricating the same are provided. The fabrication method includes forming a boron thin film on a substrate and thermally processing the substrate on which the boron thin film is formed along with a magnesium source and cooling the resulting structure. The superconducting magnesium diboride thin film can be used in a variety of electronic devices employing superconducting thin films, such as precision medical diagnosis equipment using superconducting quantum interface devices (SQUIDs) capable of sensing weak magnetic fields, microwave communications equipment used for satellite communications, and Josephson devices. Computer systems with 100 times greater computing speed can be implemented with the superconducting magnesium diboride thin film.

Abstract: Oxide bronze compositions and articles manufactured in accordance therewith are provided. The oxide bronze compositions have the general formula AxBOy, in which A comprises an alkali, alkaline earth or rare earth metal and in which A has a valence, m, equal to 1, 2 or 3, B comprises a transition metal having a valence, n, less than or equal to 6,0<x<1 on an atomic ratio basis and y=[(x)(m)+n]/2. High temperature superconducting devices incorporating such compositions are also provided. The superconducting devices include a substrate having a polycrystalline superconducting layer or filament deposited on top of or embedded in the substrate. The superconducting layer or filament is formed of the oxide bronze composition. In some embodiments, the oxide bronze layer is textured with a full-width-half-maximum of a pole figure of less than or equal to 20 degrees.

Abstract: In a multi-core-BSCCO high-temperature superconductor comprising a superconductor structure disposed in a silver enclosure, silver-enveloped superconductor filaments including a superconductive material having a metal component, and a resistive material layer disposed around the superconductor filaments and separating the superconductor filaments from each other, the resistive material layer consists of a carbonate having a metal component which is identical to a metal component included in the superconductor material.

Abstract: An oxide superconductor is capable of assuring a high trapped magnetic field and maintaining its performance for a long period of time without being affected by internal or external forces, such as thermal strain or by corrosive environments. The oxide superconductor contains a resin impregnated layer incorporated with a filler material having a low value of linear thermal expansion coefficient, or contains the resin impregnated layer or a resin impregnated layer incorporated with a filler material and covered with a resin layer incorporated with the filler material having a low value of linear thermal expansion coefficient, or contains an oxide superconductive bulk body having an adhesively covering layer of resin impregnated fabric on the outside surface, or contains an oxide superconductive bulk body having on the surface thereof a resin or a resin-impregnated layer dispersedly incorporated with a filler material.

Abstract: An oxide superconductor wire is prepared by preparing a length of precursor wire for processing into an oxide superconductor wire and coating the precursor wire with an isolating layer. The coated wire is wound onto a reel in a spiralling manner, such that each turn of the spiral is in alignment with the preceding turn of the spiral along an axis perpendicular to the axis of winding. The wound precursor wire is then heated to form the oxide superconductor. The removable isolating layer is prepared by coating the wire with a solution including a metal oxide and a porosity-inducing component, and heating the coated wire so as to induce porosity and control grain size of the metal oxide so as to render the coating removable. The coating should function to isolate the overlapping turns of the wound wire from neighboring wires, so that not diffusion bonding or adherence between the turns occurs.

Abstract: Improvements in critical current capacity for superconducting film structures are disclosed and include the use of, e.g., multilayer YBCO structures where individual YBCO layers are separated by a layer of an insulating material such as CeO2 and the like, a layer of a conducting material such as strontium ruthenium oxide and the like or by a second superconducting material such as SmBCO and the like.

Abstract: A superconducting thin film pattern (20) formed from an oxide superconducting thin film is formed on a sapphire substrate (10) having a step (11) via a CeO2 buffer layer, and the step (11) and superconducting thin film pattern (20) are formed such that the step (11) crosses a predetermined portion of a square thin film pattern (22) having an opening portion (23) at the central portion. Step-edge Josephson junctions (26, 27) are formed at the portion crossed by the step (11), and a SQUID is obtained. The sapphire substrate is relatively inexpensive, and a large substrate can be used.

Abstract: An oxide superconducting element is formed on a substrate 10 by a layered structure 30 formed of oxide superconducting thin-film and a non-superconducting thin-film layers. The element is a superconducting regular current interval voltage step element. The current-voltage characteristic curve in a magnetic field has a voltage step being generated at regular bias current intervals. The layered structure 30 is formed by depositing alternately M′Ba2Cu3O7 (M′ is one or a combination of more than two elements of Nd, Sm and Eu) and M″Ba2Cu3O7 thin-films (M″ is either Pr or Sc, or a combination of the two elements).

Abstract: Oxide thin films having a perovskite-like structure and undergoing a ferromagnetic phase transition with large temperature coefficients of resistance (TCRs) are disclosed. These can be useful materials for making thermistors, bolometers, infrared detectors and the like. These can be fabricated with a number of methods, preferably including metal oxide chemical vapor deposition, laser ablation and sputtering. In one embodiment, the oxides are based on a LaMnO3 with substitutions of Ca, Sr, Ba, Mn, and Pb for some of the La. The amounts can be varied to maximize the TCR or shift the temperature at which the maximum occurs. Methods of making such thin films are disclosed. In one embodiment, the high sensitivity films can be used in an array of micro-bolometers in an infrared camera.

Abstract: A lanthanum aluminate (LaAlO3) substrate on which thin films of layered perovskite copper oxide superconductors are formed. Lanthanum aluminate, with a pseudo-cubic perovskite crystal structure, has a crystal structure and lattice constant that closely match the crystal structures and lattice constants of the layered perovskite superconductors. Therefore, it promotes epitaxial film growth of the superconductors, with the crystals being oriented in the proper direction for good superconductive electrical properties, such as a high critical current density. In addition, LaAlO3 has good high frequency properties, such as a low loss tangent and low dielectric constant at superconductive temperatures. Finally, lanthanum aluminate does not significantly interact with the superconductors. Lanthanum aluminate can also be used to form thin insulating films between the superconductor layers, which allows for the fabrication of a wide variety of superconductor circuit elements.

Abstract: An oxide superconducting element wire (20) comprises a base material (1), an intermediate layer (2), and an oxide superconducting thin film (3). The base material (1) being long and flexible has a cross-section in a circular or a regular polygonal form perpendicular to the longitudinal direction of the same. The periphery of the base material (1) is covered with an intermediate layer (2) and the periphery of the same is covered with an oxide superconducting thin film (3). The oxide superconducting thin film (3) has a portion in which a crystal orientation is three-axes aligned continuing in the longitudinal direction of the element wire (20).

Abstract: An implant patterned superconductive device and a method for indirect implant-patterning of oxide superconducting materials is provided. The method forms a device having an oxide superconducting layer on a substrate, deposits a passivation layer atop the oxide superconducting layer, and implants chemical impurities in a selected portion of the superconducting layer through the passivation layer. This modifies the conductivity of the selected portion of the oxide superconducting layer and electrically isolates the selected portion from the non-selected portion of the oxide superconducting layer. The passivation layer is made of a material less susceptible to implant damage than the oxide superconducting layer to allow inhibition of the oxide superconducting layer while protecting the crystalline structure of the top surface of the oxide superconducting layer and keeping it planarized.

Abstract: A lanthanum aluminate (LaAlO3) substrate on which thin films of layered perovskite copper oxide superconductors are formed. Lanthanum aluminate, with a pseudo-cubic perovskite crystal structure, has a crystal structure and lattice constant that closely match the crystal structures and lattice constants of the layered perovskite superconductors. Therefore, it promotes epitaxial film growth of the superconductors, with the crystals being oriented in the proper direction for good superconductive electrical properties, such as a high critical current density. In addition, LaAlO3 has good high frequency properties, such as a low loss tangent and low dielectric constant at superconductive temperatures. Finally, lanthanum aluminate does not significantly interact with the superconductors. Lanthanum aluminate can also used to form thin insulating films between the superconductor layers, which allows for the fabrication of a wide variety of superconductor circuit elements.

Abstract: A superconductor structure inclludes a substrate made from a temperature-resistant glass material, a buffer layer which has been deposited on the substrate, and a layer of a metal oxide high Tc superconductor material that has been deposited thereon. A glass material with a coefficient of thermal expansion of over 6·10−6 K−1 and a transformation temperature of over 550° C. is to be provided. At least a deposition process in which a maximum temperature is at most 100 K higher than the transformation temperature of the glass material is selected for the production of the structure. A current limiter device is also provided.

Abstract: The invention features high performing composite superconducting oxide articles that can be produced from OPIT precursors substantially without poisoning the superconductor. In general, the superconducting oxide is substantially surrounded by a matrix material. The matrix material contains a first constraining material including a noble metal and a second metal. The second metal is a relatively reducing metal which lowers the overall oxygen activity of the matrix material and the article at a precursor process point prior to oxidation of the second metal. The second metal is substantially converted to a metal oxide dispersed in the matrix during or prior to a first phase conversion heat treatment but after formation of the composite, creating an ODS matrix.

Abstract: A lanthanum aluminate (LaAlO3) substrate on which thin films of layered perovskite copper oxide superconductors are formed. Lanthanum aluminate, with a pseudo-cubic perovskite crystal structure, has a crystal structure and lattice constant that closely match the crystal structures and lattice constants of the layered perovskite superconductors. Therefore, it promotes epitaxial film growth of the superconductors, with the crystals being oriented in the proper direction for good superconductive electrical properties, such as a high critical current density. In addition, LaAlO3 has good high frequency properties, such as a low loss tangent and low dielectric constant at superconductive temperatures. Finally, lanthanum aluminate does not significantly interact with the superconductors. Lanthanum aluminate can also used to form thin insulating films between the superconductor layers, which allows for the fabrication of a wide variety of superconductor circuit elements.

Abstract: In a method for producing laminate, a buffer layer is applied to a substrate, with the buffer layer material being evaporated from the buffer layer material dispensing devices at an angle &agr;1≠0 at the normal to the substrate surface onto the latter, before an oriented thin layer is evaporated. According to the invention, provision is made such that (a) following evaporation of the buffer layer and prior to the evaporation of the oriented thin layer, at least one cover layer is evaporated under deposition conditions that vary from those under which the buffer layer was applied, especially at a different pressure, different temperature, different rate, and/or different angle &agr;2≠&agr;1, especially &agr;2<&agr;1, preferably &agr;2≈0° to the substrate surface normal, and/or is evaporated on the buffer layer in such fashion that the buffer layer has a biaxial texture and/or facets.

Abstract: A SQUID made of an oxide superconducting thin film is formed on a sapphire substrate. CeO2 film, RBa2Cu3O7−x film (“R” indicates a rare earth element chosen among a group formed of Yb, Er, Ho, Y, Dy, Gd, Eu, Sm and Nd) and SrTiO3 film are deposited on the substrate top of the sapphire substrate successively. Furthermore, an oxide superconducting thin film to form a SQUID is deposited on the SrTiO3 film.

Abstract: The invention provides an improved substrate for growing layers of oxide superconductor materials for use in high current engineering applications. The invention also provides superconducting laminates based on the inventive substrates, and processes for the manufacture thereof. The substrate includes an alloy layer that is formed of either a cube-textured FeNi alloy containing about 47% Ni to 58% Ni, or (b) a cube-texture Ni—Cu alloy in the composition range 41% Ni to 44% Ni. The substrate may further include an oxide buffer layer covering a surface of the alloy layer.

Abstract: A thin-film of a high temperature superconducting compound having the formula M1-xCuO2-y, where M is Ca, Sr, or Ba, or combinations thereof, x is 0.05 to 0.3, and x>y. The thin film has a Tc (zero resistivity) of about 40 K. Also disclosed is a method of producing the superconducting thin film.

Abstract: A composite superconductor having an interior component of multiple filaments of superconducting Bi-2223 sheathed in a Ag or Ag alloy material, and a RE, TI or Hg based superconductor surrounding the interior component.

Abstract: A high temperature oxide superconductor is efficiently protected from the affects of water and acids by forming a passivation layer of a fluoride. The fluoride layer comprises a fluoride composed of one or more elements composing the oxide superconductor and/or one or more elements that can compose an oxide superconductor by replacing at least in part one or more elements composing the oxide superconductor.

Abstract: A method of manufacturing a superconductor wire which comprises: rolling a polycrystalline metallic substrate; heating the rolled polycrystalline metallic substrate at a temperature of 900° C. or more in a non-oxidizing atmosphere, whereby obtaining a rolled textured structure which is oriented such that the [100] plane thereof is parallel with a rolled plane and the <001> axis thereof is parallel with a rolled direction; heating the polycrystalline metallic substrate of the rolled textured structure at a temperature of 1,000° C. or more in an oxidizing atmosphere, whereby forming an oxide crystal layer consisting essentially of an oxide of the polycrystalline metal; and forming an oxide superconductor layer on the oxide crystal layer.

Abstract: The invention relates to a series of layers containing at least one layer on the basis of REBa2CU3O7-Z or with a comparable crystallographic structure, wherein said layer is connected to a non-superconductive layer. The only material chosen for the non-superconductive layer is material containing atomic components which are chemically compatible with the superconductive material of the high temperature superconductive layer. Such a series of layers enables a multilayer system or also a cryogenic component, e.g. a Josephson contact, to be formed.

Abstract: A bulk superconductor including a plurality of units each composed of a substrate and a superconductive layer of R--Ba--Cu--O, where R is selected from La, Nd, Sm, Eu, Gd, Y, Dy, Ho, Er, Tm, Yb and mixtures thereof, formed on the substrate. The units are arranged in a row or in a matrix such that the superconductive layers of respective units are superconductively joined with each other.

Abstract: A lanthanum aluminate (LaAlO.sub.3) substrate on which thin films of layered perovskite copper oxide superconductors are formed. Lanthanum aluminate, with a pseudo-cubic perovskite crystal structure, has a crystal structure and lattice constant that closely match the crystal structures and lattice constants of the layered perovskite superconductors. Therefore, it promotes epitaxial film growth of the superconductors, with the crystals being oriented in the proper direction for good superconductive electrical properties, such as a high critical current density. In addition, LaAlO.sub.3 has good high frequency properties, such as a low loss tangent and low dielectric constant at superconductive temperatures. Finally, lanthanum aluminate does not significantly interact with the superconductors. Lanthanum aluminate can also used to form thin insulating films between the superconductor layers, which allows for the fabrication of a wide variety of superconductor circuit elements.

Abstract: A high performance superconducting ceramic article for use in a liquid cryogen bath is provided. It includes a superconducting ceramic tape having at least one surface vulnerable to cryogenic infiltration is sealed on each vulnerable surface to a non-porous metallic laminate, which also provides the desired support structure, in substantially impervious relation by a non-porous metallic bonding agent. This results in greater protection of the superconducting ceramic tape from cryogen infiltration, and permits greater thermal cycling of the superconductor during use without causing degradation of the tape's critical current carrying capacity.

Abstract: An a-axis high temperature superconducting film having preferential in-plane orientation is formed. In the preferred embodiment, an a-axis film has substantial amounts of superconductor oriented with its c-axis in a unified direction. YBCO on neodymium gallate (110) plane has resulted in a high temperature superconductor with over 80% by volume being a-axis with c-axis in-plane alignment in one preferential direction. These films are epitaxial. The preferred method of film growth is for in situ growth by laser ablation. Preferably, the a-axis film is nucleated by laser ablation on onto a substrate which is at a temperature of 50 to 100.degree. C. less than the optimal substrate temperature for c-axis growth. Optionally, once a-axis nucleation has begun, the substrate temperature may be increased to optimize superconductor properties.

Abstract: A resonant structure has a center conductor, a dielectric element, and an outer conductor. The center conductor is a substrate with a coating of a superconductor on its outer surface, and the outer conductor is a substrate with a coating of a superconductor on its inner surface. The dielectric element has a passageway which is sized for receiving the inner conductor so that there is substantially complete contact between the layers of superconductor coating and the dielectric. Similarly, the outer surface of the dielectric element is sized to match the inner superconductor coated surface of the outer conductor.

Abstract: Compounds of the general formula A.sub.4 MeSb.sub.3 O.sub.12 wherein A is either barium (Ba) or strontium (Sr) and Me is an alkali metal ion selected from the group consisting of lithium (Li), sodium (Na) and potassium (K) have been prepared and included in high critical temperature thin film superconductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Abstract: A process for forming a laminate of 123-type copper oxide superconductor thin films having dissimilar crystal axis orientations, a laminate of 123-type thin copper oxide superconductor layers exhibiting excellent superconducting property, and wiring for Josephson junction. A c-axis oriented single crystalline thin film of an oxide superconductor having a Y:Ba:Cu atomic ratio of substantially 1:2:3 and a lattice constant of 11.60 angstroms.ltoreq.c.ltoreq.11.70 angstroms at a temperature of 20.degree. C. under an oxygen partial pressure of 160 Torr is formed on a single crystalline substrate, and an a-axis oriented single crystalline thin film of said oxide superconductor is formed on the above laminated film relying upon a sputter deposition method.

Abstract: A superconducting garnet thin film system (10) is provided for high frequency microwave applications where a single crystal high temperature superconducting (HTSC) layer (18) is integrated with a garnet substrate (12). A first perovskite compound buffer layer (14) is epitaxially grown on an upper surface of the garnet substrate layer (12) and defines a lattice constant less than the lattice constant of the garnet substrate layer (12) with the first perovskite layer being aligned in a cube on cube parallel orientation with respect to the garnet substrate layer (12). A second perovskite layer (16) is epitaxially grown on an upper surface of the first perovskite layer (14) at an orientation of 45.degree. to first layer (14) and defines a lattice constant less than the lattice constant of the first perovskite layer.

Abstract: A high temperature superconductor junction and a method of forming the junction are disclosed. The junction 40 comprises a first high-T.sub.c superconductive layer (first base electrode layer) 46 on a substrate 42 and a dielectric layer 48 on the first high-T.sub.c superconductive layer. The dielectric layer and the first high-T.sub.c superconductive layer define a ramp edge 50. A trilayer SNS structure 52 is disposed on the ramp edge to form an SSNS junction. The SNS structure comprises a second high-T.sub.c superconductive layer (second base electrode layer) 54 directly on the first high-T.sub.c superconductive layer, a normal barrier layer 56 on the second high-T.sub.c superconductive layer, and a third high-T.sub.c superconductive layer 58 (counterelectrode) on the barrier layer. The ramp edge is typically formed by photoresist masking and ion-milling. A plasma etch step can be performed in-situ to remove the photoresist layer 62 following formation of the ramp edge.

Abstract: An unsegregated metal oxide/silver composite wire is provided having a plurality of metal oxide filaments disposed within a matrix comprising silver, wherein the filaments are comprised of at least copper, and an intermediate region comprising copper oxide and silver in contact with and surrounding each of the metal oxide filaments. The intermediate region has a thickness of no greater than three microns. Each of the metal oxide filaments extends continuously for the length of the wire, and each of the metal oxide filaments is separated from adjacent filaments by the matrix.

Abstract: A thin film structure including a lanthanum aluminum oxide substrate, a thin layer of homoepitaxial lanthanum aluminum oxide thereon, and a layer of a nonlinear dielectric material thereon the thin layer of homoepitaxial lanthanum aluminum oxide is provided together with microwave and electro-optical devices including such a thin film structure.

Abstract: This invention permits superconducting ceramics, as well as other ceramic materials, to be spray deposited onto indefinitely large sheets of metallic substrate from a carboxylic acid salt solution. Elemental metal precursors of the superconductor are introduced into the solution as carboxylic acid salts. The deposit formed on the malleable metallic substrate is then thermomechanically calcined to form c-axis textured metal-superconductor composite sheet structures. These composite sheet structures can be formed by pressing together two ceramic-substrate structures, ceramic face-to-face, to form a metal-ceramic-metal sheet structure, or by overlaying a metal sheet over the deposited structure. Once the structure has been thermomechanically calcined, the c-axis of the superconductor is oriented parallel to the vector defining the plane of the metal sheet, i.e., perpendicular to the surface of the plane.

Abstract: A superconductive composite member comprises a core of oxide ceramic superconducting material that is disposed in a metal envelope comprising a silver alloy which is hardenable by an oxide dispersion. Preferably, the silver alloy is an alloy of Ag--Mg--Ni, Ag--Mn--Ni or Ag--Al alloy which may also include one or more precious metal elements selected from a group consisting of Ru, Rh, Pd, Os, Ir, Pd and Au. The composite member is formed by introducing the superconductive material into the silver alloy envelope, cross section-reducing the assembly of the envelope and core and, subsequently, thermal treatment for the recovery and setting of the oxygen concentration.

Abstract: The invention provides methods to manufacture dense, complex c-axis oriented ceramic oxide layers with thickness greater than 2.5 microns (.mu.m) on a metallic substrate (composites) without the use of an interfacial barrier, buffer, or surface layer using a metalorganic deposition process and thermomechanical reaction treatments is disclosed. A porous amorphous metal oxide ceramic deposit is formed directly on the substrate by spray pyrolyzing a mixed metalorganic precursor solution onto the metallic substrate. The metallic substrate has been previously heated to temperatures greater than the boiling point of the organic solvent and are high enough to initiate in situ decomposition of the metalorganic precursor salts. The process does not apply the precursor solution to the substrate as a liquid coating that is pyrolyzed in subsequent processing steps.

Abstract: A Josephson junction having a laminar structure which includes a substrate, a first superconductive layer deposited on the substrate, a non-superconductive layer deposited on the first superconductive layer, and a second superconductive layer deposited on the non-superconductive layer. The laminar structure has three segments, including: a first planar segment, a second planar segment, and a ramp segment connecting the two planar segments at an ascent angle thereto. The layers are of substantially uniform thickness in the three segments, with the substrate being thinner in the second planar segment than in the first planar segment and having a constantly-decreasing thickness in the ramp segment. The superconductive layers and the non-superconductive layer are deposited in-situ and are epitaxial with a c-axis in a direction substantially normal to the first and second planar segments.

Abstract: An oxide superconducting multilayered thin film structure having a laminated layer structure of oxide superconductor thin film layers and non-superconductor thin film layers constituted by a combination of material groups for making strain free interfaces among both thin film layers. For example, an oxide superconductor multilayered film constituted by a laminated layer structure where thin films of an oxide superconductor represented by the chemical formula of M'Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M'; a rare earth element of Nd, Sm, Eu or the like or an alloy of these, .delta.; oxygen depletion amount) and thin films of an oxide represented by the chemical formula of M*Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M*; an element of Pr, Sc or the like or an alloy of these, .delta.; oxygen depletion amount) are alternately stacked. The oxide thin films are thin films fabricated by a pulsed laser deposition process or a sputtering process. A Josephson device can be provided by using the multilayered film.

Abstract: Compounds of the of the general formula La.sub.3-z Me.sub.z Ba.sub.3 Ca.sub.1-v Nc.sub.v Cu.sub.7 O.sub.16+x, wherein Me can be a rare earth metal or an alkaline metal ion selected from the group consisting of yttrium (Y), ytterbium (Yb), sodium (Na) and Nc can be a 2+ion selected from the group consisting of magnesium (Mg) and cadmium (Cd) have been prepared as the HTSC in thin film superconductors.

Abstract: A composite material is disclosed which includes a substrate, an oriented film provided on a surface of the substrate and formed of a crystal of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7, and a layer of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7 formed on the oriented film.

Abstract: A composite high Tc superconductor film is applied to a substrate, said film as applied having a thickness of at least 5000 Angstrom and an outer surface having an average roughness not exceeding 250 Angstrom.

Abstract: A method and apparatus for temperature activated protection of electronic components from interfering electromagnetic radiation comprising the step of shielding of a component with a thin film of superconducting material characterized by a critical temperature of at least 93.degree.K, and exposing the film to a temperature below the critical temperature. To allow transmissions to and from the component, the shield is converted to a window by heating the film to a temperature above the critical temperature.

Abstract: A SQUID includes a substrate and a superconducting current path of a patterned oxide superconductor material thin film formed on a surface of the substrate. A c-axis of an oxide crystal of the oxide superconductor material thin film is oriented in parallel to the surface of the substrate.