Abstract: A NanoLayer Deposition (NLD) process for depositing composite films of tertiary, quaternary, pentanary, and hexary stoichiometric films is provided. The inventive deposition process is a cyclic process consisting of a sequence of thin film deposition and treatment steps to obtain a desired film stoichiometry. The deposition steps are not self-limiting as in atomic layer deposition. In one embodiment for depositing a compound oxide film, the deposition process comprises a first deposition, followed by a hydrogen-containing plasma treatment, a second deposition followed by a hydrogen-containing plasma treatment, and then a third deposition followed by a hydrogen-containing plasma and then an oxygen-containing plasma treatment to produce a stoichiometric quaternary film. The cyclic process is repeated until the desired overall film thickness is achieved. The inventive process is used to fabricate high k dielectric films, ferroelectric films, piezoelectric films, and other complex oxides.

Abstract: A coated conductor comprising an improved buffer layer architecture where the buffer layers are obtainable by chemical solution deposition and where the buffer layers essentially adopt the degree of texture of the substrate.

Abstract: Method of depositing a buffer layer of epitaxial metal oxide on a functionalised surface of a textured metal substrate, said method comprising the following steps: (1) a layer is deposited of a precursor of an oxide of the type A2?xB2+xO7 where A represents a metal of valency 3 or a mixture of several of these metals, and B a metal of valency 4, and x is a number between ?0.1 and +0.1, from a solution of carboxylates of said metals A and B, (2) said layer of oxide precursor is left to dry, (3) heat treatment is carried out in order to pyrolyse said oxide precursor and to form the oxide, at least part of said heat treatment being carried out under a flow of reducing gas.

Abstract: This invention provides a method of making a fluorinated precursor of a superconducting ceramic. The method comprises providing a solution comprising a rare earth salt, an alkaline earth metal salt and a copper salt; spraying the solution onto a substrate to provide a film-covered substrate; and heating the film-covered substrate in an atmosphere containing fluorinated gas to provide the fluorinated precursor.

Abstract: A coated conductor comprising an improved buffer layer architecture where the buffer layers are obtainable by chemical solution deposition and where the buffer layers essentially adopt the degree of texture of the substrate.

Abstract: Method of depositing a buffer layer of epitaxial metal oxide on a functionalised surface of a textured metal substrate, said method comprising the following steps: (1) a layer is deposited of a precursor of an oxide of the type A2?xB2+xO7 where A represents a metal of valency 3 or a mixture of several of these metals, and B a metal of valency 4, and x is a number between ?0.1 and +0.1, from a solution of carboxylates of said metals A and B, (2) said layer of oxide precursor is left to dry, (3) heat treatment is carried out in order to pyrolyse said oxide precursor and to form the oxide, at least part of said heat treatment being carried out under a flow of reducing gas.

Abstract: Superconductor precursor solutions are disclosed. The precursor solutions contain, for example, a salt of a rare earth metal, a salt of an alkaline earth metal and a salt of a transition metal. The precursor solutions can optionally include a Lewis base. The precursor solutions can be processed relatively quickly to provide a relatively thick and good quality intermediate of a rare earth metal-alkaline earth metal-transition metal oxide.

Abstract: A method for producing a thick film includes disposing a precursor solution onto a substrate to form a precursor film. The precursor solution contains precursor components to a rare-earth/alkaline-earth-metal/transition-metal oxide including a salt of a rare earth element, a salt of an alkaline earth metal, and a salt of a transition metal in one or more solvents, wherein at least one of the salts is a fluoride-containing salt, and wherein the ratio of the transition metal to the alkaline earth metal is greater than 1.5. The precursor solution is treated to form a rare earth-alkaline earth-metal transition metal oxide superconductor film having a thickness greater than 0.8 ?m. precursor solution.

Abstract: A process for forming a thin metal oxide film is disclosed that comprises molding an amorphous powder of organic metal chelate complexes to obtain a target. The process also includes subjecting the target to a PVD process that forms the thin metal oxide.

Abstract: The invention relates to methods and compositions for making a multi-layer article. The compositions can be used in relatively fast methods which can superconductor material intermediates that have relatively few cracks and/or blisters. The compositions can have relatively low water contents.

Abstract: A method of producing an oriented oxide superconducting film. A metal oxyfluoride film is provided on a substrate. The metal oxyfluoride film comprises the constituent metallic elements of an oxide superconductor in substantially stoichiometric proportions. The film is then converted into the oxide superconductor in a processing gas having a total pressure less than atmospheric pressure.

Abstract: An oxide superconductor article is provided having an oxide superconductor film having a thickness of greater than 0.5 microns disposed on a substrate, said article having a transport critical current density (Jc) of greater than or equal to about 105 A/cm2 at 77 K, zero field. The oxide superconductor film is characterized by high Jc and high volume percent of c-axis epitaxial oxide grains, even with thicknesses of up to 1 micron.

Abstract: An oxide superconductor capable of realizing a high critical current density and its manufacturing method requiring only a low temperature heat treatment. An oxide superconductor has a superconductive layer with a composition of RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, where RE stands for any one of rare earth elements including Y, Eu, Gd, Dy, Ho, Er, and Yb, which is formed on the substrate by RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x phase and CuO phase resulting from a decomposition of RE.sub.1 Ba.sub.2 Cu.sub.4 O.sub.8 phase, in which the CuO phase and micro-defects caused by the decomposition function as pinning centers. This superconductive layer is formed by applying a solution containing organic compounds of a plurality of metallic elements for constituting the oxide superconductive layer; calcining the substrate applied with the solution to obtain a calcined body in which the organic compounds contained in the solution are thermally decomposed; heating the calcined body to produce RE.sub.1 Ba.sub.2 Cu.sub.

Abstract: A method for producing microcomposite powders for use in superconducting and non-superconducting applications.

Abstract: Method for the preparation of a precursor for a superconductor, comprising the addition of a condensation product to an aqueous solution of metal salts, the total or partial removal of water from the mixture thus obtained, the subsequent processing of the viscous mass obtained after having removed part of the water or the calcination of the solid gel obtained after having substantially removed all the water, wherein the condensation product is a product of esterification of citric acid with ethylene glycol prepared separately and the solution of metal salts substantially is a solution of acetates in water and acetic acid.

Abstract: A superconducting thin oxide film is formed by the steps of mixing a gas of the organometal compound of the alkali earth metal, a gas of at least one organometal compound of the element of the group IIIa and/or a halogenide thereof, and a gas of at least one organometal compound of a transition metal and/or a halogenide thereof, with an inert gas, to produce a gas mixture; mixing an oxygen-containing gas to said gas mixture to produce a gas mixture having a predetermined oxygen partial pressure; and thermally decomposing said gas mixture having the predetermined oxygen partial pressure on a substrate to form a thin film of a complex oxide on said substrate.