Abstract: A high-temperature superconducting thin film of compound oxide selected from the group consisting of:Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Ho.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Lu.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x,Sm.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Nd.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Gd.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x,Eu.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Er.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Dy.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x,Tm.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Yb.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, La.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x,(La, Sr).sub.2 CuO.sub.4-x,which is deposited on a substrate of MgO or SrTiO.sub.3, with the outer surface of the high-temperature superconducting thin film being covered with a protective crystalline film of SrTiO.sub.3.

Abstract: Superconductivity is inhibited in selected portions of a high temperature superconductor ("HTS") material by patterning the selected portions with a resist. The patterned material is ion-bombarded to implant impurity ions in non-resist-bearing portions of the material. After low temperature annealing, the non-resist-bearing portions of the material lose their superconducting characteristics, but such characteristics are preserved in the material's resist-bearing portions. The material's crystalline structure is preserved, so additional layers can be epitaxially grown atop the inhibited material. Superconductivity is inhibited at a selected depth in a HTS material by subjecting the material to impurity ion bombardment at an energy level controlled to implant ions in the material at the selected depth. After low temperature annealing, the material loses its superconducting characteristics at the selected depth, but such characteristics are preserved at other depths (i.e.

Abstract: A joining product of oxide superconducting materials having a high current density and process for producing the same. A joining product comprising a plurality of oxide superconducting materials having an identical crystal orientation joined with each other through a superconducting phase of the same type as described above which has the same crystal orientation as the oxide superconducting materials and a lower peritectic temperature than the oxide superconducting materials.

Abstract: A microwave bandpass filter has a planar configuration formed in microstrip or stripline where a circuit is printed onto a substrate. The filter has at least two patch resonators with a T-shaped coupling path extending between the two resonators. In a further embodiment of the invention, one or more resonators is isolated from other resonators in the filter by being located in a compartmentalized housing or separate housings to eliminate undesirable coupling between a resonator in one compartment and a resonator in another compartment. The filter of the present invention has improved performance characteristics over previous patch resonator filters.

Abstract: An oriented ferroelectric thin film element has a structure in which an epitaxial or oriented buffer thin film is formed on a semiconductor single crystal substrate, an epitaxial or oriented metallic thin film is formed on the buffer thin film, and an epitaxial or oriented ferroelectric thin film is further formed on the metallic thin film. The semiconductor single crystal substrate may be made of Si or GaAs, the buffer thin film may be made of MgO or MgAl.sub.2 O.sub.4, the metallic thin film may be made of Pd, Pt, Al, Au, or Ag, and the ferroelectric thin film has an ABO.sub.3 perovskite crystal structure.

Abstract: The superconductor bandpass filter for electromagnetic signals includes a substrate (5); striplines (1) made of a type II superconductive material arranged on the substrate and a tuning device (2) for tuning the superconductor bandpass filter consisting of a device for changing a magnetic penetration depth .lambda.(T) of the striplines (1), so as to change the effective length, effective width and effective spacing of the striplines and thus to change the center frequency and/or the bandwidth. The device for changing the magnetic penetration depth .lambda.(T) of the striplines (1) advantageously includes a device for exerting a mechanical force or stress on the striplines and/or a device for varying a magnetic field applied to the striplines.

Abstract: An improved high temperature superconducting planar filter wherein the coupling circuit or connecting network is located, in whole or in part, on the side of the substrate opposite the resonators and enables higher power handling capability.

Abstract: An apparatus and method for producing electricity from heat. The present invention is a thermoelectric generator that uses materials with substantially no electrical resistance, often called superconductors, to efficiently convert heat into electrical energy without resistive losses. Preferably, an array of superconducting elements is encased within a second material with a high thermal conductivity. The second material is preferably a semiconductor. Alternatively, the superconducting material can be doped on a base semiconducting material, or the superconducting material and the semiconducting material can exist as alternating, interleaved layers of waferlike materials. A temperature gradient imposed across the boundary of the two materials establishes an electrical potential related to the magnitude of the temperature gradient. The superconducting material carries the resulting electrical current at zero resistivity, thereby eliminating resistive losses.

Abstract: This invention relates to multilayered superconductive composites, particularly to composites based on thallium-containing superconducting oxides, and their process of manufacture.

Abstract: The planar superconducting resonator includes a substrate (1), a symmetrically shaped stripline (2) applied to the substrate (1) in which two orthogonal electromagnetic modes are excitable and including a symmetry perturbation for coupling the two orthogonal electromagnetic modes, an additional stripline (5) arranged on the substrate in the vicinity of the symmetry perturbation, a Josephson junction (3) arranged between the symmetry perturbation and the additional stripline (5) and a device for generating and controlling a magnetic field at the Josephson junction (3) so that the degree of coupling between the two orthogonal electromagnetic modes is varied. The Josephson junction (3) is formed by a non-superconducting layer (4) arranged between the symmetry perturbation and the additional stripline (5).

Abstract: The present invention relates to a tuneable fringe effect capacitor for conducting radio frequency energy. The capacitor includes a thin film of ferroelectric material, a pair of films of a conductive material deposited on the ferroelectric film with a gap between the films, and a substrate for the ferroelectric material and the conductive films. The capacitance value across the gap is varied by applying a voltage to the ferroelectric material and thereby altering the dielectric constant of the ferroelectric material.

Abstract: A microelectronic thin-film device having a thin superconducting layer in contact with a thin quasi-insulating conversion layer. The critical current of the superconducting layer is controlled by application of a voltage to the conversion layer by means of a gate electrode, causing the conversion layer to undergo an insulator-metal transition.

Abstract: A substrate having a superconducting thin film of compound oxide thereon. An intermediate layer consists of at least one layer of copper-containing oxide is interposed between the substrate and the superconducting thin film.

Abstract: High power high temperature superconductor filters having TM.sub.0i0 mode (i=1, 2, 3, . . . ) circular shaped high temperature superconductor planar resonators or symmetrical polygon shaped resonators which eliminates wrap-around H-field and very sharp current peaks at the edge of the resonator are provided.

Abstract: A MMIC high Tc superconducting ferroelectric phase shifter is comprised of as microstrip line on a film of a single crystal ferroelectric material. To operate the phase shifter over a desired bandwidth a quadrature band pass filter, having 1,2,3, . . . coupled lines, is coupled to the phase shifter. The microstrip lines are comprised of a high Tc superconductor such as YBCO, TBCCO.

Abstract: c-axis oriented high temperature superconductors are deposited onto new compositions of garnets using pulsed laser deposition (PLD) with conditions of 85 mTorr of oxygen partial pressure; a block temperature of 730.degree. C., a substrate surface temperature of 790.degree. C. and a laser fluence of 1 to 2 Joules/cm.sup.2 at the target, a laser repetition rate of 10 Hz and a target to substrate distance of 7 cm and in which the a and b lattice parameters of the new compositions of garnets exhibit a mismatch of less than 7 percent with the a and b lattice parameters of the HTSC.

Abstract: A number of MMIC ferroelectric variable time delay devices are presented. Each embodiment has a microstrip configuration deposited on a ferroelectric film which is deposited on a high Tc superconductor substrate connected to the ground. A bias electric field changes the permittivity of the ferroelectric material. As a result, a variable time delay is obtained.

Abstract: In a bismuth oxide superconductor having a composition of Bi-Sr-Ca-Cu or (Bi,Pb)-Sr-Ca-Cu and being covered with a metal sheath, the a-b plane of a 2223 phase, which is a 110 K phase, is oriented along the longitudinal direction as a matrix, while a dispersed superconducting phase mainly consisting of a 2212 phase, which is a 80 K phase, and/or non-superconducting phases is dispersed along the a-b plane in the 2223 phase, so that a magnetic field property of its critical current density is extremely improved. In order to prepare such a bismuth oxide superconductor, performed are the steps of preparing raw material which is based on a 2223 composition in Bi-Sr-Ca-Cu or (Bi,Pb)-Sr-Ca-Cu in relation to blending/composition, consisting as a superconducting phase of mainly a 2212 phase and non-superconducting phases in relation to the crystal structure, covering the raw material with a metal sheath, and performing deformation processing and heat treatment on the composite.

Abstract: Disclosed is a method for making a high-temperature super-conducting field-effect transistor with a thick super-conducting channel, the method comprising the steps of depositing a template layer on an oxide crystal substrate by using a pulse laser depositing apparatus; forming a YBa.sub.2 Cu.sub.3 O.sub.7-x layer on the template layer; patterning the YBa.sub.2 Cu.sub.3 O.sub.7-x layer to form a patterned YBa.sub.2 Cu.sub.3 O.sub.7-x layer having an opening and expose a surface portion of the template layer; depositing a YBa.sub.2 Cu.sub.3 O.sub.7-x channel layer on the surface portion of the template layer and over the patterned YBa.sub.2 Cu.sub.3 O.sub.7-x layer, the channel layer having a thickness of from 60 to 100 nm; sequentially forming an SrTiO.sub.3 protective layer and an SrTiO.sub.

Abstract: Excellent films of a high Tc superconductor are easily produced on metal coated substrates at a temperature below 700.degree. C. These metal buffer films are made of Pt, Au, Ag, Pd, Ni or Ti. The film superconductivity is significantly improved by the metal buffer layer. Since it is easy to form this metal coating on a substrate, the invention can increase the potential number of usable substrates such as fibers, amorphous solids or semiconductors.

Abstract: A superconducting film is disclosed which has the following composition:(Nd, Ba).sub.3 Cu.sub.3 O.sub.7-dwhere d is a number greater than 0 but smaller than 0.5. The superconducting film has the same crystal structure as that of YBa.sub.2 Cu.sub.3 O.sub.7 except that part of the Nd sites and/or part of the Ba sites are occupied by Ba and Nd atoms, respectively.

Abstract: A method for manufacturing a three-terminal superconducting device is disclosed. A superconducting channel constituted in an oxide superconductor thin film is deposited on a deposition surface of a substrate. A gate electrode for the device is formed through a gate insulator layer on the superconducting channel of the device. The steps of forming the gate electrode include forming a thin film that stands upright with respect to the insulator layer for the gate.

Abstract: A superconducting thin film system (10) is provided for high frequency microwave applications where a single crystal high temperature superconducting layer (18) is integrated with a garnet substrate (12). A first perovskite compound buffer layer (14) is epitaxially grown on an upper surface of the garnet substrate layer (12) and defines a lattice constant less than the lattice constant of the garnet substrate layer (12). A second perovskite layer (16) is epitaxially grown on an upper surface of the first perovskite layer (14) and defines a lattice constant less than the lattice constant of the first perovskite layer. A high temperature superconducting layer (18) is epitaxially grown on an upper surface of the second perovskite layer (16) and is lattice matched to the second perovskite compound layer (16) for incorporation of passive components within the high temperature superconducting layer (18) having high frequency microwave applications.

Abstract: A superconducting element is disclosed which comprises a lower superconducting layer, an upper superconducting layer, and an intermediate layer interposed between the lower and upper superconducting layers. The lower and upper superconducting layers are both form of a superconducting cuprate. The intermediate layer is formed of a layered cuprate containing in the crystal structure thereof multiple fluorite blocks represented by the formula:[B]AE.sub.2 (RE1.sub.1-y RE2.sub.y).sub.m+1 Cu.sub.2 O.sub.z(wherein [B] stands for a block layer, AE for an alkaline earth element, RE1 for at least one element selected from the group consisting of lanthanide elements and actinoid elements which form ions of valency of larger than 3, RE2 for at least one element selected from the group consisting of lanthanide elements which form ions of valency of 3 and yttrium, m for a number satisfying the expression m.gtoreq.2, y for a number satisfying the expression 0.ltoreq.y<1, and z for the oxygen content).

Abstract: Lumped element electrical components, such as inductors and capacitors, are formed to include high temperature superconducting materials. In the preferred embodiment, thin film epitaxial high temperature superconductors are patterned to form capacitors and inductors on low loss substrates. Preferably, a ground plane is formed on the back side of the substrate, most preferably being formed of high temperature superconducting material, or other highly conductive materials such as gold or copper. Various advantageous structures include a planar spiral structure, a zig-zag serpentine structure, a single coil structure and a double coil structure. Single layer and multilayer structures are included. Improved narrow bandpass filters and high Q resonator structures are formed.

Abstract: A bandpass filter comprises multiple side-coupled strip line resonators wherein the resonators are staggered or offset with respect to their nearest neighbors by substantially 1/4 wavelength or less. In the preferred embodiment, the strip line bandpass filter structure has substantially parallel resonators arrayed with substantially constant spacing between the resonators with 1/4 wavelength overlap or less. Generally, the amount of stagger between nearest neighbors is reduced for resonators toward the center of the filter. Coupling between resonators is controlled by varying the relative amount of stagger between resonators. The resonators may be formed from normal metal or superconducting materials, such as YBCO or thallium containing superconductors. A strip line structure may be formed by utilizing two mirror structures each comprising a substrate having a ground plane and a patterned staggered resonator array formed on the substrate on a side opposite the ground plane.

Abstract: Lumped element electrical components, such as inductors and capacitors, are formed to include high temperature superconducting materials. In the preferred embodiment, thin film epitaxial high temperature superconductors are patterned to form capacitors and inductors on low loss substrates. Preferably, a ground plane is formed on the back side of the substrate, most preferably being formed of high temperature superconducting material, or other highly conductive materials such as gold or copper. Various advantageous structures include a planar spiral structure, a zig-zag serpentine structure, a single coil structure and a double coil structure. Single layer and multilayer structures are included. Improved narrow bandpass filters, bandreject filters and high Q resonator structures are formed. Chebyshev bandpass filters are formed from multiple series connected zig-zag filter structures.

Abstract: A Josephson junction device is disclosed that includes a single crystalline substrate having a NaCl type crystal structure. The device includes a principal surface having two horizontal planes and a slope inclined at an angle of 5.degree. to 30.degree. between the two horizontal planes. An oxide superconductor thin film is formed on the principal surface of the substrate, which includes first and a second superconducting portions of a first single crystalline oxide superconductor and a second single crystalline oxide superconductor respectively positioned on the two horizontal planes of the substrate. A junction portion of a single crystalline oxide superconductor has a different crystal orientation from the first and the second superconducting portions, and is positioned on the slope of the substrate. Two grain boundaries between each of the first and the second superconducting portions and the junction portion constitute one weak link of the Josephson junction.

Abstract: A multilayered structure comprising copper oxide perovskite material having altered superconductive properties is provided by epitaxially depositing on a substrate a layer of a first copper oxide material and then epitaxially depositing on the first layer a layer of a second, different copper oxide perovskite material. Further alternate epitaxially layers of the two copper oxide perovskite materials are then deposited one on the other. The first and second copper oxide perovskite materials in unstressed bulk states have nondistorted crystallographic lattice structures with unit cell dimensions that differ in at least one dimension. In the epitaxial layers, the crystallographic lattice structures of the two copper oxide materials are distorted relative to their nondistorted crystallographic lattice structures.

Abstract: An epitaxial structure comprising a silicon containing substrate and a high T.sub.c copper-oxide-based superconducting layer, which may include an intermediate layer between the silicon substrate and the superconductor layer. Epitaxial deposition is accomplished by depositing a superconductor on a (001) surface of silicon in a manner in which the unit cell of the superconductor layer has two out of three of its crystallographic axes rotated 45 degrees with respect to the corresponding axes of the silicon unit cell, the remaining axis of the superconductor unit cell being normal to the Si (001) surface.

Abstract: A high-temperature superconductor (HT.sub.c S) in a microstrip configurat which is electrically related to a superconducting coupler and which is controlled by a heater disposed over the superconducting microstrip line. This limiter configuration is used in a series configuration with other circuitry and utilizes the low loss characteristics of the HT.sub.c S material and the wide bandwidth characteristics of microstrip. The structure itself is a five layer microstrip geometry which includes a normal metal ground plane; a dielectric substrate disposed on the metal ground plane; a superconducting microstrip transmission disposed on the substrate; a dielectric film layer disposed on the superconducting microstrip; and a heating element disposed on the dielectric film layer and over the superconducting microstrip.

Abstract: A superconductive lead assembly for a superconductive device (e.g., magnet) cooled by a cryocooler coldhead having first and second stages. A first ceramic superconductive lead has a first end flexibly, dielectrically, and thermally connected to the first stage and a second end flexibly, dielectrically, and thermally connected to the second stage. A jacket of open cell material (e.g., polystyrene foam) is in general surrounding compressive contact with the first ceramic superconductive lead, and a rigid support tube generally surrounds the jacket. This protects the first ceramic superconductive lead against shock and vibration while in the device. The rigid support tube has a first end and a second end, with the second end thermally connectable to the second stage.

Abstract: A superconductive lead assembly for a superconductive device (e.g., magnet) cooled by a cryocooler coldhead having first and second stages. A first ceramic superconductive lead has a first end flexibly, dielectrically, and thermally connected to the first stage and a second end flexibly, dielectrically, and thermally connected to the second stage. A jacket of open cell material (e.g., polystyrene foam) is in general surrounding compressive contact with the first ceramic superconductive lead, and a rigid support tube generally surrounds the jacket. This protects the first ceramic superconductive lead against shock and vibration while in the device. The rigid support tube has a first end and a second end, with the second end thermally connectable to the second stage.

Abstract: A superconducting thin film formed on a semiconductor substrate, which comprises at least one superconducting region formed of an oxide superconductor on the principal surface of the semiconductor substrate and at least one isolation region formed of an oxide insulator including component atoms of the oxide superconductor, which surrounds the superconducting region, and the superconductor thin film has a planar upper surface.

Abstract: A superconductive lead assembly for a superconductive device (e.g., magnet) cooled by a cryocooler coldhead having first and second stages. A first ceramic superconductive lead has a first end flexibly, dielectrically, and thermally connected to the first stage and a second end flexibly, dielectrically, and thermally connected to the second stage. A jacket of open cell material (e.g., polystyrene foam) is in general surrounding compressive contact with the first ceramic superconductive lead, and a rigid support tube generally surrounds the jacket. This protects the first ceramic superconductive lead against shock and vibration while in the device. The rigid support tube has a first end and a second end, with the second end thermally connectable to the second stage.

Abstract: A superconductive lead assembly for a superconductive device (e.g., magnet) cooled by a cryocooler coldhead having first and second stages. A first ceramic superconductive lead has a first end flexibly, dielectrically, and thermally connected to the first stage and a second end flexibly, dielectrically, and thermally connected to the second stage. A jacket of open cell material (e.g., polystyrene foam) is in general surrounding compressive contact with the first ceramic superconductive lead, and a rigid support tube generally surrounds the jacket. This protects the first ceramic superconductive lead against shock and vibration while in the device. The rigid support tube has a first end and a second end, with the second end thermally connectable to the second stage.

Abstract: A superconductor element includes a first layer of an oxide superconductor, a second layer of an insulator, semiconductor, or metal, and an interlayer interposed between the first and second layers and formed of AgO.sub.x (where in 0<.times.< 1/2) .

Abstract: An oxide superconductor thin film is formed on a substrate by emitting molecular beams of constituent elements of the oxide superconductor to the substrate under high vacuum, wherein at first a molecular beam of one of the constituent elements of the oxide superconductor, of which an oxide thin film can be deposited so as to have a smooth surface, is emitted so as to form the oxide thin film of one or two unit cells. And then, all the molecular beams of constituent elements of the oxide superconductor are emitted to the oxide thin film so as to form the oxide superconductor thin film.

Abstract: A joint device structure for capacitive microwave coupling of a superconducting device arranged on a substrate with room temperature circuitry; including a superconducting wave guide of an oxide superconductor on said substrate from one side to the superconducting device launching microwave to the superconducting device, a pair of superconducting groundplanes of an oxide superconductor arranged at an end of the superconducting wave guide sandwiching the end of the superconducting wave guide with a little gap and a microwave probe-head connected to the room temperature circuitry arranged above the superconducting wave guide with a coupling gap having three probing pins corresponding to the superconducting wave guide and the superconducting groundplanes.

Abstract: A superconductor/insulator metal oxide hetero structure for electric field tunable microwave device, including a dielectric substrate, a first superconducting electrode of an oxide superconductor provided on said dielectric substrate, an insulating layer formed on the first superconducting electrode and a second electrode arranged on the insulating layer in which the conductivity of the first superconducting electrode and/or the dielectric property of the insulating layer can be changed by a dc bias voltage applied between the first and the second electrodes so that surface resistance and/or surface reactance can be changed.

Abstract: Periodic and pseudo-periodic slow wave structures comprising a plurality of adjacent sections, each section comprising a dielectric ring in contact with a disk coated with high temperature superconducting thin film, having coupling between the sections and tunable phase velocity for use in particle accelerators and traveling wave tubes are disclosed.

Abstract: The present invention concerns a multilayered structure comprising copper-oxide perovskite material having strained crystallographic lattices and altered superconductive properties. The multilayer structure of the invention comprises at least one first layer of a first copper-oxide material and at least one second layer of a second, different copper-oxide perovskite material. The first and second layers are adjacent to one another in an epitaxial lattice-distortion relationship. The first and second copper-oxide perovskite materials in unstressed bulk states define respectively first and second comparison nondistorted crystallographic lattice structures. The first and second comparison nondistorted crystallographic lattice structures have unit cell dimensions which differ in at least one dimension. The first copper-oxide perovskite material in the first layer has a first crystallographic lattice structure which is distorted relative to the first comparison nondistorted crystallographic lattice structure.

Abstract: A lanthanum aluminate ( LaAlO.sub.3) substrate on which thin films of layered perovskite copper oxide superconductors are formed. Lanthanum aluminate, with a pseudo-cubic perovskite crystal structure, has a crystal structure and lattice constant that closely match the crystal structures and lattice constants of the layered perovskite superconductors. Therefore, it promotes epitaxial film growth of the superconductors, with the crystals being oriented in the proper direction for good superconductive electrical properties, such as a high critical current density. In addition, LaAlO.sub.3 has good high frequency properties, such as a low loss tangent and low dielectric constant at superconductive temperatures. Finally, lanthanum aluminate does not significantly interact with the superconductors. Lanthanum aluminate can also used to form thin insulating films between the superconductor layers, which allows for the fabrication of a wide variety of superconductor circuit elements.

Abstract: A lanthanum aluminate (LaAlO.sub.3) substrate on which thin films of layered perovskite copper oxide superconductors are formed. Lanthanum aluminate, with a pseudo-cubic perovskite crystal structure, has a crystal structure and lattice constant that closely match the crystal structures and lattice constants of the layered perovskite superconductors. Therefore, it promotes epitaxial film growth of the superconductors, with the crystals being oriented in the proper direction for good superconductive electrical properties, such as a high critical current density. In addition, LaAlO.sub.3 has good high frequency properties, such as a low loss tangent and low dielectric constant at superconductive temperatures. Finally, lanthanum aluminate does not significantly interact with the superconductors. Lanthanum aluminate can also used to form thin insulating films between the superconductor layers, which allows for the fabrication of a wide variety of superconductor circuit elements.

Abstract: A microwave component includes a superconducting signal conductor formed on a first dielectric substrate, and a superconducting ground conductor formed on a second dielectric substrate. The first dielectric substrate is stacked on the superconducting ground conductor of the second dielectric substrate. Each of the superconducting signal conductor and the superconducting ground conductor is formed of an oxide superconductor thin film of which crystals are orientated in such a manner that the c-planes of the crystals are parallel to the direction in which an electro-magnetic field generated by microwave launched to the microwave component changes.

Abstract: A superconducting device comprising a substrate having a principal surface, a superconducting source region and a superconducting drain region formed of an oxide superconductor on the principal surface of the substrate separated from each other, an extremely thin superconducting channel formed of the oxide superconductor between the superconducting source region and the superconducting drain region. The superconducting channel electrically connects the superconducting source region to a superconducting drain region, so that a superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. The superconducting device comprises a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, and non-superconducting oxide layers having a similar crystal structure to that of the oxide superconductor.

Abstract: There is disclosed a superconducting microwave component including a first substrate of a dielectric material with a conductor line of an oxide superconductor formed in a required pattern on the surface, a second substrate of a dielectric with a grounding conductor of an oxide superconductor formed on the surface, and a third substrate of a dielectric which is laid on the first and the second substrates, with the third substrate sandwiched between the first and the second substrates.

Abstract: A superconducting tube for shielding magnetic fields including a substrate having a tubular wall, a superconducting layer supported by the substrate, and at least two ring-shaped reinforcing members connected to the radially-outer surface of the tubular wall.

Abstract: The design of a high Tc superconducting band pass tunable ferroelectric filter (TFF) is presented. The band pass TFF consists of an edge coupled filter on a ferroelectric substrate. Each input and output microstrip line is a quarter wavelength long. Each intermediate microstrip line is a half wavelength long with the first quarter wavelength being coupled to the preceding microstrip line and the remaining quarter wavelength being coupled to the succeeding microstrip line. Each microstrip line is connected, through an LC filter, to a common bias voltage source. Application of a bias voltage changes the frequency of operation of the filter. For matching the impedances of the input and output of the filter to the impedances of an input and output circuit respectively, matching ferroelectric quarter wavelength transformers are provided.

Abstract: The design of a high Tc superconducting band reject tunable ferroelectric filter (TFF) is presented. The band reject TFF consists of a main microstrip line on a dielectric substrate. One or more half wavelength microstrip resonators, on a ferroelectric substrate, is coupled to the main microstrip line. At a resonant frequency of a resonator, a short circuit is presented on the main microstrip line resulting in a rejection of signal of that frequency. By applying a bias voltage to a resonator, the frequency of the resonator and, as such, the reject band of the filter is changed. Different resonators can be tuned to different frequencies.