Abstract: Methods of forming superconducting devices are disclosed. In one embodiment, the method can comprise depositing a protective barrier layer over a superconducting material layer, curing the protective barrier layer, depositing a photoresist material layer over the protective barrier layer and irradiating and developing the photoresist material layer to form an opening pattern in the photoresist material layer. The method can further comprise etching the protective barrier layer to form openings in the protective barrier layer based on the opening pattern, etching the superconductor material layer based on the openings in the protective barrier layer to form openings in the superconductor material layer that define a first set of superconductor material raised portins and stripping the photoresist material layer and the protective barrier layer.

Abstract: The present invention relates to a superconducting film having a substrate and a superconductor layer formed on the substrate, in which nano grooves are formed parallel to a current flowing direction on a substrate surface on which the superconductor layer is formed and two-dimensional crystal defects are introduced in the superconductor layer on the nano grooves, and a method of manufacturing this superconducting film. A superconducting film of the invention, which is obtained at low cost and has very high Jc, is useful in applications such as cables, magnets, shields, current limiters, microwave devices, and semifinished products of these articles.

Abstract: The present invention relates to a superconducting film having a substrate and a superconductor layer formed on the substrate, in which nano grooves are formed parallel to a current flowing direction on a substrate surface on which the superconductor layer is formed and two-dimensional crystal defects are introduced in the superconductor layer on the nano grooves, and a method of manufacturing this superconducting film. A superconducting film of the invention, which is obtained at low cost and has very high Jc, is useful in applications such as cables, magnets, shields, current limiters, microwave devices, and semifinished products of these articles.

Abstract: The present invention is directed towards a process of depositing multilayer thin films, disk-shaped targets for deposition of multilayer thin films by a pulsed laser or pulsed electron beam deposition process, where the disk-shaped targets include at least two segments with differing compositions, and a multilayer thin film structure having alternating layers of a first composition and a second composition, a pair of the alternating layers defining a bi-layer wherein the thin film structure includes at least 20 bi-layers per micron of thin film such that an individual bi-layer has a thickness of less than about 100 nanometers.

Abstract: A process for preparing a superconductor which is a low anisotropy, high temperature superconductor, includes providing a target in molded form comprised of one of the superconductor or constituent elements of the superconductor, the superconductor having a layered crystal structure, having a superconducting transition temperature, Tc, of 110 K or more, and having a composition expressed by Cu1−zMzAe2Cax−1CuxOy where M is at least one member selected from the group consisting of (a) a trivalent ion of Tl, and (b) polyvalent ions of Mo, W, and Re, Ae is at least one of Ba and Sr, x ranges from 1 to 10, and y ranges from 2x+1 to 2x+4, and z ranges from 0<z≦0.5; and forming a film of the superconductor from the target on a substrate by one of sputtering or laser abrasion.

Abstract: A method of preparing a superconducting oxide by combining the metallic elements of the oxide to form an alloy, followed by oxidation of the alloy to form the oxide. Superconducting oxide-metal composites are prepared in which a noble metal phase intimately mixed with the oxide phase results in improved mechanical properties. The superconducting oxides and oxide-metal composites are provided in a variety of useful forms.

Abstract: The invention relates to a process for producing thin films in which the pressure of the process gas is kept constant in a process chamber with a gas inlet and outlet, a target and a substrate, while material is sputtered from the target and deposited on the substrate. The invention also relates to a process for producing thin films. It is the purpose of the invention to create a process providing a more homogenous film. According to the invention, to this end the process gas is caused to reach the plasma. Alternatively, either one or several emission lines may be spectroscopically detected in a spatial region and, after a desired cross sectional shape has been set, it is kept constant in time by subsequently regulating the process gas mixing ratio.

Abstract: An improved cathode for a sputtering system includes a metal cylinder and strips of material bonded to the inside of the metal cylinder and/or material sprayed onto the inside of the metal cylinder. The strips may have various specified compositions and/or configurations and/or other characteristics which enhance the ability of the sputtering system to deposit films of high temperature superconductor material on substrates.

Abstract: A method for preparing a slurry target for use in a sputtering apparatus. The target material is ground into a powder form, and mixed with a solvent to form a slurry. The slurry is poured into a target mold and allowed to slow dry by evaporation at or near room temperature. The target is mechanically stable, can be positioned in any orientation without falling out of the mold, and resists failure from thermal stresses during sputtering.

Abstract: A method of providing a thin film for lining quarter-wave resonant cavities of copper comprises the deposition of a superconducting material, in particular niobium, in the form of a micro-layer having a substantially constant thickness covering both the cylindrical surface of the cavity and its bottom formed of a plane plate, by biased-diode d.c. sputtering through emitting cathodes in a form fitting geometrically the surfaces to be lined.

Abstract: A process for depositing a superconducting thin film composed mainly of compound oxide such as LnBa.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) or (La.sub.1-x .alpha..sub.x).sub.2 CuO.sub.4 (.alpha. is Ba or Sr) on a substrate such as MgO, SrTiO.sub.3 or silicon by sputtering technique, characterized in that a negative bias is applied to the substrate during the sputtering stage without heating the substrate.

Abstract: A superconducting material composed mainly of compound oxide having a composition represented by the general formula:Tl.sub.x Ca.sub.y BaCu.sub.z O.sub.pin which "x", "y" and "z" are numbers each satisfies 0.5.ltoreq.x.ltoreq.3.0, 0.5.ltoreq.y.ltoreq.3.0, and 0.9.ltoreq.z.ltoreq.4.0 respectively.

Abstract: A device for fabricating an oxide superconductor cable includes a spinning furnace for receiving a preform and spinning the preform into a glass fiber. The device further includes a sputtering apparatus for receiving the spun glass fiber and coating the glass fiber with an oxide superconductor film as well as a pulling mechanism for pulling the glass fiber.

Abstract: A process for preparing a thin film of high-temperature compound oxide superconductor having a large area on a substrate by a magnetron sputtering method. A magnetron electrode on which an elongated target is secuerd has an elongated shape and a substrate which also has an elongated shape are arranged in such a manner that a surface of the substrate makes a predetermined angle which is not zero with respect to the surface of said elongated target. The substrate is moved slowly along a direction which is transverse to the elongated dimension of the target.

Abstract: A method of forming a phase-separated composite material which utilizes sputtering in a thermal gradient at relatively high sputtering pressures generally above about 0.1 Torr sufficient to produce nanoscale particles which are embedded in a continuous phase matrix produced by normal sputtering. This method avoids the alloying and/or compound formation which prevents preparation of phase-separated composites by conventional co-sputtering, and the invention thus enables particulate composites to be formed from entirely new classes of materials. Microhardness testing shows that the phase-separated composites produced by the present invention have an increased hardness compared to the pure matrix material.

Abstract: A method of growing KTa.sub.x Nb.sub.1-x O.sub.3 by pulsed laser evaporation. In order to compensate for the volatile K, two targets are prepared, one of sintered oxide powder having K, Ta, and Nb in amounts stoichiometric to KTa.sub.x Nb.sub.1-x O.sub.3 and the other of melt-grown KNO.sub.3. The method can also be used to form other complex materials having volatile components using a variety of sputtering growth techniques. The two targets are mounted on a rotating target holder and are alternately ablated by the laser beam. The KNO.sub.3 provides excess K, thus allowing the growth of a stoichiometric film. The method can be applied to many complex materials for which some of the components are volatile.

Abstract: A method is disclosed which comprises setting a substrate within a mixed gas atmosphere containing 0.1 to 5% of oxygen gas and a balance as an inert gas, and sputtering a target member containing Ln, M, Cu and O within that atmosphere to obtain an oxygen-deficient perovskite type oxide superconducting thin-film of substantially Ln:M:Cu:O=1:2:3:(7-.delta.), where Ln represents at least one element selected from the rare earth elements and M represents at least one element selected from the group consisting of Ba, Sr, and Ca. The oxide superconducting thin-film of that composition ratio has a critical temperature of over 77K.

Abstract: An improved method of manufacturing superconducting ceramics in the form of a thin film are described. The thin film is first formed of a superimposed structure composed of three films which contain a rare earth metal, an alkaline metal and copper respectively. Then the superimposed thin film is fired to convert to superconducting film.

Abstract: A superconducting film is formed by a physical vapor deposition. In order to form such a superconducting film as exhibits a sufficient superconductivity a small portion of a target is sublimed without decomposing molecules of the target and deposited on a surface of a substrate. In addition an undesirable component is not introduced from the target into the superconducting film.

Abstract: This invention relates to a process for producing a superconducting thin film, characterized in that a target made of a compound oxide containing Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu is used for carrying out physical vapor deposition to produce a thin film of perovskite type oxide or quasi-perovskite type oxide. The target may be made of preliminary sintered material which is obtained by preliminary sintering of a powder mixture including oxides, carbonates, nitrates or sulfates of Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu, or of finally sintered material which is obtained by a final sintering of preliminary sintered material at a temperature ranging from 700.degree. to 1,500.degree. C., preferably from 700.degree. to 1,300.degree. C. The physical vapor deposition is performed by high-frequency sputtering technique under Ar and O.sub.2 containing atmosphere, at a partial pressure of Ar ranging from 1.0.times.10.sup.

Abstract: Disclosed is a device made of superconductive material wherein the superconducting layer is enclosed by at least one material which is a conductor of ions of one of the anionic constituent elements of the superconductive layer. This makes it possible to adjust the stoichiometry of the superconductive layer. The disclosure also concerns a method for adjusting the content of the constituent elements of the superconductive layer by electrolysis.

Abstract: Combination of a flattened cathode in a cylindrical magnetron sputtering system and positioning of a substrate relatively close to the flattened cathode allows deposition of a uniform film having good composition. The system and method of the present invention is especially suitable for depositing films using YBCO and BCSCO targets.

Abstract: A superconductive material with a superconducting critical temperature of at least 77.degree. K. comprising 20 at. % Nb, 10 at. % Si, 10 at. % Al and 60 at. % O is provided by simultaneous vapor-phase physical deposition or sputtering of Nb, Si and Al onto a heated sapphire substrate under oxygen-containing atmosphere, followed by a rapid quenching or post-oxidization of Nb-Si-Al ternary system composition having an Nb/Si/Al atomic ratio of 2/1/1. The high critical temperature allows abundantly existing, cheap available liquid nitrogen to be used as a cryogen for developing superconductivity.

Abstract: An improved fabrication of superconducting films is disclosed whereby a multi-phase Y-Ba-Cu-O compound is utilized. The film is formed by sputtering of a target material consisting of the superconducting 123 phase Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7 onto the green 211 phase Y.sub.2 BaCuO.sub.5. After annealing, the superconducting characteristics, of the formed film, in terms of transition width and T.sub.c, are improved over those using other oxide compounds as substrates.

Abstract: The present invention relates to an element comprising a superconductive material or a wiring formation technique. In a thin film wiring board in which a superconductive material is used as a conductor, annealing should be conducted at a high temperature in an oxygen atmosphere after formation of a film in order to convert the conductor portion into a superconductive material, which makes it necessary to use an inorganic oxide as the insulating film. This brought about a problem that the etching of the second and subsequent insulation layers causes a damage to the wiring and insulation layer provided thereunder.In the present invention, an over-etching preventing layer is provided on a wiring layer provided under the second and subsequent insulation layers in order to solve the problem in question.The present invention brings about an effect of realizing the formation of a multi-layered wiring layer by making use of a superconductive material.

Abstract: This is an improved method for providing silicon dioxide with openings which expose contact pad areas for connections to superconductor in the preparation of superconducting integrated circuits. It relates to the type of method which utilizes depositing of a silicon dioxide film on a substrate (including over superconductor conductor patterns on the substrate surface), placing a resist film on the silicon dioxide film, patterning the resist film to expose portions of the silicon dioxide, and reactive ion etching the exposed portions of the silicon dioxide film to expose contact pad areas of superconductor. The improvement utilizes an etchant gas consisting essentially of 50-95 volume percent nitrogen trifluoride and 5-50 volume percent rare gas (preferably about 77 volume percent nitrogen trifluoride, with argon or neon or mixtures thereof as the rare gas) for the reactive ion etching of the exposed portions of the silicon dioxide film.

Abstract: The present invention provides a manufacturing method of a conductive or superconductive thin film of mixed oxide as an easier way to apply the mixed oxide type superconductive materials to electronic devices, etc. The manufacturing method of the present invention comprises using a mixed oxide composition showing conductivity or superconductivity as a target material and sputtering it onto a substrate to form a thin film. Examples of the mixed oxide compositions showing conductivity or superconductivity and to be used as the target material in the present invention are mixed oxides consisting of lanthanoid, alkali earth metal and copper as main components, particularly, a mixed oxide consisting essentially of La-Sr-Cu-O, La-Ba-Cu-O, La-Ca-Cu-O etc. or mixtures thereof, materials containing a small quantity of other metal oxide(s), or mixed oxides mainly consisting of Yb-Ba-Cu-O, Er-Ba-Cu-O, Ho-Ba-Cu-O, Tm-Ba-Cu-O or mixtures thereof.

Abstract: A method of producing a superconducting circuit by forming a film having a superconducting phase on a substrate and applying a laser beam to a part of the superconducting phase to cause transition of the part of the superconducting phase into a non-superconducting phase.

Abstract: A thin film of a preselected compound having a large area is continuously produced on a substrate by depositing elements constituting the preselected compound from a target member onto the surface of a substrate by sputtering, comprising the steps of:rotating a first target member having a flat surface disposed around an axis which crosses the surface and comprising elements of the preselected compound so that a first part of the surface of target member is positioned at a first sputtering position and another part of the first target member is positioned at a second sputtering position,at the first position, sputtering at least one second target comprising at least one element of the preselected compound which is easily sputtered from the first target member so as to supply the deficient element to the first target member, andat the second position, sputtering the elements from the first target member so as to deposit them on the surface of said substrate while continuously supplying the substrate so that a

Abstract: A method for depositing and tailoring anisotropic properties of ceramic oxide superconductive films onto the outer surface of fibers, wires, rods, bars and onto the inner surface of tubes, as well as onto the surface of disc-shaped substrates, employs either tandem magnetron discharges alone or both an abnormal glow cold cathode electron gun together with tandem magnetron discharges. This deposition method provides uniform thin films having high growth rates, controllable stoichiometry and desired anisotropic microstructure. The magnetron cathodes are made from either mixtures or single elements of the metals. The oxygen component is achieved either from the cathode material itself or by reactive sputtering in an oxygen ambient or a post-deposition thermal or plasma oxidation. An external electron beam may also be used for in-situ annealing of the deposited films while placed under an external applied magnetic field to better align crystals in the films for the desired anisotropic superconducting properties.

Abstract: A method for sputter deposition of films or coatings over large areas or at widely different substrate locations relative to the target where the coating is of exactly the same component composition as the target from where the material is being sputtered. This is accomplished by sputtering in a noble gas or other vapor plasma through ion bombarding of at least one spherical or partially spherical target. Superconductors, as well as many other multicomponent materials, can be sputter deposited on a substrate with unchanged composition by utilizing a spherical target in a low gas or vapor pressure plasma.

Abstract: Superconducting fiber bundle which contains a multiplicity of carrier fibers such as, for instance, carbon fibers, boron fibers, steel fibers coated with a superconducting layer of a niobium compound of the general formula NbC.sub.x N.sub.y O.sub.z (x+y+z less than or equal to 1), characterized by the feature that the superconducting layer consists of fine-grained B1-structure niobium compound, the mean grain size of which is between 3 and 50 nm.