Abstract: A liquid composition comprising (A) at least one polar organic solvent, selected from the group consisting of solvents exhibiting in the presence of from 0.06 to 4% by weight of dissolved tetramethylammonium hydroxide (B), the weight percentage being based on the complete weight of the respective test solution (AB), a constant removal rate at 50° C. for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) at least one quaternary ammonium hydroxide, and (C) at least one aromatic amine containing at least one primary amino group, a method for its preparation and a method for manufacturing electrical devices, employing the liquid composition as a resist stripping composition and its use for removing negative-tone and positive-tone photoresists and post etch residues in the manufacture of 3D Stacked Integrated Circuits and 3D Wafer Level Packagings by way of patterning Through Silicon Vias and/or by plating and bumping.

Abstract: A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.

Abstract: The invention relates to compositions and methods that are useful in etching a metal surface. In particular, the invention relates to novel acid compositions and methods of using such compositions in etching a metal surface, preferably an aluminum surface prior to anodizing to dissolve impurities, imperfections, scale, and oxide. The compositions are effective in maintaining their etching capacity and in removing smut produced by the etching of a surface as well as in general cleaning.

Abstract: The present invention discloses an improved cleaning composition for cleaning metal surfaces such as aluminum and aluminum-containing alloys. The cleaning composition of the present invention comprises water and an ethoxylate of an alcohol having Formula R1—OH wherein R1 is a saturated or unsaturated, straight-chain or branched aliphatic having from 12 to 80 carbon atoms; an inorganic pH adjusting component; and at least one surfactant that is different than the ethoxylate set forth above. The cleaning composition of the present invention also has an average water-break-free percent reduction of less than 50% after 7 days aging of a working composition prepared from the cleaning composition. The present invention also provides a method of cleaning a metal surface with the cleaning composition of the invention.

Abstract: The invention relates to compositions and methods of removing silicon-based anti-reflective coatings/hardmask layers.

Abstract: A method and cleaning composition for removing engine deposits from turbine components, in particular turbine disks and turbine shafts. This method comprises the following steps: (a) providing a turbine component having a surface with engine deposits thereon, wherein the turbine component comprises a nickel and/or cobalt-containing base metal; and (b) treating the surface of the turbine component with a cleaning composition to convert the engine deposits thereon to a removable smut without substantially etching the base metal of the turbine component. The cleaning composition comprises an aqueous solution that is substantially free of acetic acid and comprising: a nitrate ion source in an amount, by weight of the nitrate ion, of from about 470 to about 710 grams/liter; and a bifluoride ion source in an amount, by weight of the bifluoride ion, of from about 0.5 to about 15 grams/liter.

Abstract: A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide layer and then removing the chemical oxide layer, thereby removing foreign bodies from a surface of the semiconductor substrate. Accordingly, the foreign bodies can be substantially removed from the surface of the substrate without corroding a metal.

Abstract: The present invention relates to the preparation of a sample. Preferably, the sample is a sample to be analyzed, for example for ingredient content, etc. Preferred samples include foods, cosmetics, paints, coatings, adhesives, tanning agents, fabrics, chemical compositions, dyestuffs, samples subject to forensic studies, etc. Samples prepared according to the invention method are digested in sulfuric acid, nitric acid, and one or more fluoride salts selected from LiF, NaF, RbF, CsF and KF and then preferably subjected to analysis for metal content, etc, for example using atomic absorption (“AA”) and inductively coupled plasma (“ICP”).

Abstract: The invention relates to compositions and methods that are useful in etching a metal surface. In particular, the invention relates to novel acid compositions and methods of using such compositions in etching a metal surface, preferably an aluminum surface prior to anodizing to dissolve impurities, imperfections, scale, and oxide. The compositions are effective in maintaining their etching capacity and in removing smut produced by the etching of a surface as well as in general cleaning.

Abstract: A surface treatment composition and method for removing Si and reduced metal salt produced during etching of an aluminum die cast material (“ALDC material”) without generation of nitrogen oxide (NOx) or hydrogen fluoride (HF). In surface treatment of an ALDC material containing Si, Fe, Cu, Mn, Mg, Zn and Ni, the surface treatment composition for removing Si and reduced metal salt from the surface of the ALDC material after etching comprises hydrogen peroxide 300 to 950 g/l, fluorine ion-containing inorganic salt 1 to 300 g/l and balance water. The surface treatment method for removing Si and reduced metal salt from the surface of an ALDC material after etching comprises the step of dipping the ALDC material into the above described surface treatment composition. The aforementioned surface treatment composition effectively removes the Si and reduces metal salt impurities from the surface of the ALDC material without any problems such as NOx or HF gas which is harmful to the human and waste water treatment.

Abstract: The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution comprises 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 10 ppb to 4 weight percent complexing agent, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.

Abstract: A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide layer and then removing the chemical oxide layer, thereby removing foreign bodies from a surface of the semiconductor substrate. Accordingly, the foreign bodies can be substantially removed from the surface of the substrate without corroding a metal.

Abstract: Recently, use is made of copper wiring as the wiring material for semiconductor devices, and of low dielectric constant films as the insulating film between the lines of wiring. In this connection, a photoresist stripper is in need which can inhibit corrosion or damage on the copper wiring or the Low-k film, and which has excellent property of removing ashed photoresist residues. The invention provides a photoresist stripper (hereinafter, referred to as the stripper of the invention) characterized in containing a tertiary amine compound, an alkaline compound, a fluoro compound, and an anionic surfactant; and a process for preparation of semiconductor devices using the stripper of the invention.

Abstract: Compositions containing certain organic solvents and a fluorine source are capable of removing photoresist and etching residue.

Abstract: A method for chemical etching is disclosed for taking away oxidized film and removing cut as well as punched edge burs of harden-treated carbon steel (SK3, SK4 and SK5). Thereby, the fillet edge of the cut section is achieved. An oxidized film with a thickness of several micrometers is formed when a cut and punched steel is quenched and tempered at high temperature. Due to high strength and hardness of the steel, the oxidized film and edge burs are difficult to be removed by mechanical grinding. Therefore, a suitable electrolyte composes of only a little chemical reagent and oxidizer in deionized water is used to remove the oxidized film and punched bur simultaneously using chemical etching method.

Abstract: Compositions containing certain organic solvents and a fluorine source are capable of removing photoresist and etching residue.

Abstract: A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide layer and then removing the chemical oxide layer, thereby removing foreign bodies from a surface of the semiconductor substrate. Accordingly, the foreign bodies can be substantially removed from the surface of the substrate without corroding a metal.

Abstract: The inventive aqueous pickling agent on the basis of sulfuric acid or phosphoric acid and hydrogen fluoride for stainless steels, which pickling agent is free of wetting and emulsifying agents, contains (each as 100 wt-% substance) 1.5 to 16 wt-% sulfuric acid or 2.0 to 30 wt-% phosphoric acid as well as 0.5 to 14 wt-% hydrogen fluoride and 0.5 to 15.5 wt-% acid-soluble aromatic nitro compound. An iron(III) compound is not supplied to said pickling agent. Merely in the starting phase, an oxidizing agent can be supplied, which oxidizes iron(II) to form iron(III). As acid-soluble aromatic nitro compound m-nitrobenzene sulfonate and/or 3-nitrophthalate are particularly advantageous. The inventive pickling agent can be used as bath pickle and —when adding 2.5 to 5.5 wt-% magnesium and/or magnesium compound (calculated as Mg)—also as spraying pickle or brush pickle.

Abstract: Cleaning solutions for removing residuals from the surface of an integrated circuit device. Such cleaning solutions find particular application in the fabrication of a dual damascene structure following removal of excess portions of a silver-containing metal layer from a device surface. The cleaning solutions facilitate removal of particulate residuals as well as unremoved portions of the metal layer in a single cleaning process. The cleaning solutions are dilute aqueous solutions containing hydrogen peroxide and at least one acidic component and are substantially free of particulate material. Acidic components include carboxylic acids and their salts.

Abstract: An aqueous polishing composition comprises a corrosion inhibitor for limiting removal of an interconnect metal with an acidic pH. The composition includes an organic-containing ammonium salt formed with R1, R2, R3 and R4 are radicals, R1 has a carbon chain length of 2 to 15 carbon atoms. The organic-containing ammonium salt has a concentration that accelerates TEOS removal and decreases removal of at least one coating selected from the group consisting of SiC, SiCN, Si3N4 and SiCO.

Abstract: A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

Abstract: An aqueous cleaning composition comprising an alkanolamine, a tetraalkylammonium hydroxide, nonmetallic fluoride salt, a corrosion inhibitor, e.g. ascorbic acid or its derivatives alone or in combination, balance water. Such cleaning compositions are effective to remove residues from plasma process generated organic, metal-organic materials, inorganic salts, oxides, hydroxides or complexes in combination with or exclusive of organic photoresist films at low temperatures with little corrosion of copper and attack of dielectric substrates.

Abstract: The present invention relates to compositions, kits and processes for the brightening of metal surfaces by the application of the chemical compositions. These compositions act to release hydrofluoric acid as a brightening agent. The solutions are preferably mixed during application of the brightening composition to a metal surface by mixing the solutions immediately prior to or even during application of the solution. This can be readily accomplished by mixing two solutions, one having a fluoride source and the other having a strong acid to release hydrofluoric acid from the fluoride source, the mixing occurring immediately before spray application, during spraying, or immediately after spraying of the two solutions. Mixing may be done on-site, which means that mixing is performed at the site of use, usually on the same day of use or even within a few (less than 10) minutes of use.

Abstract: A method for chemical etching is disclosed for taking away oxidized film and removing cut as well as punched edge burs of harden-treated carbon steel (SK3, SK4 and SK5). Thereby, the fillet edge of the cut section is achieved. An oxidized film with a thickness of several micrometers is formed when a cut and punched steel is quenched and tempered at high temperature. Due to high strength and hardness of the steel, the oxidized film and edge burs are difficult to be removed by mechanical grinding. Therefore, a suitable electrolyte composes of only a little chemical reagent and oxidizer in deionized water is used to remove the oxidized film and punched bur simultaneously using chemical etching method.

Abstract: A photoresist residue remover composition is provided that includes one type or two or more types of fluoride compound and one type or two or more types chosen from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose (but excluding one that includes ammonium fluoride, a polar organic solvent, water, and ascorbic acid). There is also provided use of the photoresist residue remover composition for removing a photoresist residue and a sidewall polymer remaining after dry etching and after ashing.

Abstract: A semi-aqueous cleaning formulation useful for removing particles from semiconductor wafer substrates formed during a dry etching process for semiconductor devices, the cleaning formulation comprising a buffering system a polar organic solvent, and a fluoride source.

Abstract: Particulate and metal ion contamination is removed from a surface, such as a semiconductor wafer containing copper damascene or dual damascene features, employing aqueous composition comprising a fluoride containing compound; a dicarboxylic acid and/or salt thereof; and a hydroxycarboxylic acid and/or salt thereof.

Abstract: The present invention relates to a maskant system for use with a fluoride cleaning system. The maskant system comprises a parting compound applied to a surface which requires protection and a chromium rich maskant for substantially preventing intergranular attack and which reduces a depletion zone. The parting compound contains colloidal silica, de-ionized water, fused alumina grains, and alumina powder. The maskant is comprised of chromium powder mixed with a binder, a wetting agent, a thickening agent, and water. The maskant system may be used to clean components formed from nickel-based or cobalt-based alloys using a fluoride cleaning system and has particular utility when components formed from single crystal nickel based alloys are cleaned using a fluoride cleaning system.

Abstract: An aqueous cleaning composition comprising an alkanolamine, a tetraalkylammonium hydroxide, nonmetallic fluoride salt, a corrosion inhibitor, e.g. ascorbic acid or its derivatives alone or in combination, balance water. Such cleaning compositions are effective to remove residues from plasma process generated organic, metal-organic materials, inorganic salts, oxides, hydroxides or complexes in combination with or exclusive of organic photoresist films at low temperatures with little corrosion of copper and attack of dielectric substrates.

Abstract: A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

Abstract: The present invention relates to compositions, kits and processes for the brightening of metal surfaces by the application of the chemical compositions. These compositions act to release hydrofluoric acid as a brightening agent. The solutions are preferably mixed during application of the brightening composition to a metal surface by mixing the solutions immediately prior to or even during application of the solution. This can be readily accomplished by mixing two solutions, one having a fluoride source and the other having a strong acid to release hydrofluoric acid from the fluoride source, the mixing occurring immediately before spray application, during spraying, or immediately after spraying of the two solutions. Mixing may be done on-site, which means that mixing is performed at the site of use, usually on the same day of use or even within a few (less than 10) minutes of use.

Abstract: A laundry detergent composition and method of laundering clothes is disclosed which relates to the inclusion of one or more wrinkle reducing ingredients in a laundry detergent product. The benefits are delivered to the laundered item during the cleaning step and, therefore, reduces the need for further wrinkle reducing steps when the items are taken from the dryer or after hang drying.

Abstract: An inexpensive and safe copper removal method in the fabrication of integrated circuits is described. Copper is stripped or removed by a chemical mixture comprising an ammonium salt, an amine, and water. The rate of copper stripping can be controlled by varying the concentration of the ammonium salt component and the amount of water in the mixture. Also a novel chemical mixture for stripping copper and removing copper contamination is provided. The novel chemical mixture for removing or stripping copper comprises an ammonium salt, an amine, and water. For example, the novel chemical mixture may comprise ammonium fluoride, water, and ethylenediamine in a ratio of 1:1:1.

Abstract: Compositions for the removal of polymeric material from a substrate are provided where the compositions include a polyol compound selected from (C3-C20)alkanediols, substituted (C3—C20)alkanediols, (C3-C20)alkanetriols or substituted (C3-C20)alkanetriols, a glyco ether, at least 5% wt water based on the total weight of the composition, and a fluoride salt selected from ammonium fluoride, ammonium bifluoride, ammonium-tetramethylammonium bifluoride or mixtures thereof. Methods of removing polymeric material using these compositions are also provided.

Abstract: A treatment solution (2) containing fluoride is added to a cleaning solution (1) drained from a cleaning tank (11). Fluoride is allowed to react with fluorosilicic acid in the cleaning solution to settle a precipitate (4) containing fluorosilicate, and the precipitate (4) is removed. The cleaning solution regenerated in a regeneration apparatus (10) is again returned to the cleaning tank (11), and used as a cleaning solution for a CRT panel (20).

Abstract: Aqueous cleaning compositions in which the pH is controlled comprise an acidic metal cleaning compound; at least one nitrogen containing compound to provide a stabilized pH; an emulsifier, a nonionic surfactant and optionally at least one water soluble solvent having a vapor pressure of less than 4 mm Hg at 20° C.

Abstract: A cleaning agent for use in the manufacture of a semiconductor device comprising an aqueous solution containing a quarternary ammonium salt and a fluoro compound, or an aqueous solution containing a quarternary ammonium salt and a fluoro compound, as well as an organic solvent selected from the group consisting of amides, lactones, nitriles, alcohols and esters. In the semiconductor device manufacturing process, after forming a mask with a photoresist, a wiring structure is formed by dry etching of a conductive layer, wherein a protecting deposition film has been formed on side walls of the conductive layer. Use of the cleaning agent enables the protecting deposition film to be removed in a highly reliable manner with the surface of the conductive layer being decontaminated and cleaned such that no corrosion of the conductive layer occurs.

Abstract: A method of treating a surface of a metal is provided. A source of fluoride ion is mixed with a source of acid to form hydrofluoric acid and, when applied to a metal surface to be treated, the hydrofluoric acid acts as a brightening agent.

Abstract: An inexpensive and safe copper removal method in the fabrication of integrated circuits is described. Copper is stripped or removed by a chemical mixture comprising an ammonium salt, an amine, and water. The rate of copper stripping can be controlled by varying the concentration of the ammonium salt component and the amount of water in the mixture. Also a novel chemical mixture for stripping copper and removing copper contamination is provided. The novel chemical mixture for removing or stripping copper comprises an ammonium salt, an amine, and water. For example, the novel chemical mixture may comprise ammonium fluoride, water, and ethylenediamine in a ratio of 1:1:1.

Abstract: This invention provides an improved composition and process for pretreatment of aluminum prior to electroplating. The invention is an aqueous composition comprised of an acid, an oxidizing agent, and, optionally, a halogenated compound. This composition is useful in a process that effectively removes smut that results from the etching step of the aluminum pretreatment process. Alternatively, the composition can be used in a process which combines the etch and desmut steps in Al pretreatment.

Abstract: An inexpensive and safe copper removal method in the fabrication of integrated circuits is described. Copper is stripped or removed by a chemical mixture comprising an ammonium salt, an amine, and water. The rate of copper stripping can be controlled by varying the concentration of the ammonium salt component and the amount of water in the mixture. Also a novel chemical mixture for stripping copper and removing copper contamination is provided. The novel chemical mixture for removing or stripping copper comprises an ammonium salt, an amine, and water. For example, the novel chemical mixture may comprise ammonium fluoride, water, and ethylenediamine in a ratio of 1:1:1.

Abstract: A cleaner composition for removing from within a microelectronic fabrication a copper containing residue layer in the presence of a copper containing conductor layer, and a method for stripping from within a microelectronic fabrication the copper containing residue layer in the presence of the copper containing conductor layer. The cleaner composition comprises: (1) a hydroxyl amine material; (2) an ammonium fluoride material; and (3) a benzotriazole (BTA) material. The cleaner composition contemplates the method for stripping from within the microelectronic fabrication the copper containing residue layer in the presence of the copper containing conductor layer.

Abstract: A composition for selective etching of oxides over a metal. The composition contains water, hydroxylammonium salt, carboxylic acid, a fluorine containing compound, and optionally, a base. The pH of the composition is about 2 to 6.

Abstract: A cleaning composition and method are provided for removing iron stains and scale from the external surfaces of duck decoys. An illustrative composition contains hydrochloric acid, stannous chloride, ammonium bifluoride, and water. The compositions are applied to the duck decoys with a pressurized sprayer to discolor and dislodge the stain and scale and thereafter the decoys are water rinsed with a garden hose or the like to remove the dislodged material.

Abstract: A cleaning solution for electromaterials including hydrogen fluoride and either oxygen or hydrogen gas dissolved in water. The cleaning solution may alternatively include hydrogen fluoride, hydrochloric acid or nitric acid, and hydrogen or oxygen gas dissolved in water. Alternatively, the cleaning solution includes hydrogen fluoride, hydrogen peroxide and oxygen gas dissolved in water. The present invention also provides a method for cleaning electromaterials including applying an ultrasonic vibration to cleaning solution applied to electromaterials.

Abstract: An aqueous resist stripping composition contains (a) an oxidizing agent, (b) a chelating agent, (c) a water-soluble fluorine compound, and optionally (d) an organic solvent. Also provided is a process of stripping resist films and resist residues remaining after etching treatment utilizing the aqueous resist stripping composition. In the process, corrosion of semiconductor materials, circuit-forming materials, insulating films, etc. is minimized and the rinsing is sufficiently made with only water without needing organic solvent such as alcohol.

Abstract: Formulations and a process are disclosed for chemically treating a surface of a product made from magnesium alloys. One formulation comprises an acid pickle comprising hydrofluoric acid and a binary alcohol and a second formulation comprises a conversion solution comprising nitric acid, permanganate, and ammonium acid difluoride. The process comprises degreasing the product with alkaline solution, rinsing the product with water, pickling the product with the acid pickle, rinsing the product with water, modifying the product using the modifying solution, rinsing the product with purified water, and drying the product by heating.

Abstract: A homogeneous compositions containing a fluorinated solvent, hydrogen fluoride, and a co-solvent, and the use of these compositions for cleaning and etching of substrates is described.

Abstract: A method for the removing of plasma etch residues on a substrate comprising the steps of: (i) contacting the substrate with a cleaning composition, and (ii) contacting the substrate with ozonated water. The preferred cleaning composition has a pH from 2 to 6 and comprises: (A) water; (B) at least one selected hydroxylammonium compound; and (C) at least one basic compound; and optionally (D) a chelating stabilizer; and optionally (E) a surfactant.

Abstract: Compositions containing certain organic solvents and a fluorine source are capable of removing photoresist and etching residue.