Abstract: Provided are a novel cyclodisilazane derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the cyclodisilazane derivative having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under a pressure where handling is easy, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.

Abstract: Described herein are precursors and methods for forming silicon-containing films.

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

Abstract: The subject of the invention is the method of synthesis of fluoracarbofunctional cage silsesquioxanes of the general formula in which•R1 stands for HCF2(CF2)n(CH2)mO(CH2)3Si(CH3)2O or HCF2(CF2)n(CH2)mO(CH2)3 group in which n=1-12, m=1-4;•R2, R3, R4, R5, R6, R7, R8 can be the same as R1 or different from it and stand all either for the (C1-C25) alkyl group or any aryl group, based on hydrosilylation of fluoroalkyl-allyl ether with an appropriate hydrogen-silsesquioxane in the presence of siloxide rhodium complex [{Rh(OSiMe3)(cod)}2] as a catalyst.

Abstract: A process for preparing 1,3,5-triethyl-2,4,6-trihydrido-2,4,6-triethylamino-1,3,5-triaza-2,4,6-trisilacyclohexane, wherein trichlorosilane is reacted with ethylamine in a solvent.

Abstract: The present invention relates to carbon-doped silicon nitride thin film and forming method and device thereof The carbon-doped silicon nitride thin film is prepared by using a precursor having at least one of bis(dimethylamino)diethylsilane, N,N-Dimethyltrimethylsilylamine and a cyclic structure with a N—Si bond. The method for forming a carbon-doped silicon nitride thin film includes: providing a precursor having at least one of bis(dimethylamino)diethylsilane, N,N-Dimethyltrimethylsilylamine and a cyclic structure with a N—Si bond to form the carbon-doped silicon nitride thin film. The device for forming the carbon-doped silicon nitride thin film includes a reactor and a container with the aforementioned precursor coupled to the reactor.

Abstract: The invention relates to cyclic aza-sila compounds that are made of 4 to 10 units of the general formulas (I) and (II) bonded by means of Si—Si or Si—N single bonds, wherein Y is selected from among —NR1R2, hydrogen, and a halogen, R1 and R2 are selected from among hydrogen and a hydrocarbon group having 1 to 20 carbon atoms, and R3 is a hydrocarbon group having 1 to 20 carbon atoms, with the stipulation that at least two units of the general formula (I) are bonded to each other in the ring by means of an Si—Si single bond, that at most 35 mol % of the groups Y is a hydrogen, and that at most 15 mol % of the groups Y is a halogen, and to a method for the production thereof.

Abstract: The present invention relates to a preparation method for a linear or cyclic trisilaalkane which is a substance useful in the preparation of polycarbosilane and silicon carbide precursors. Linear or cyclic trisilaalkane and organic trichlorosilane derivatives can be synthesized simultaneously and in high yield by reacting bis(chlorosily)methane having a Si—H bond, either alone or together with an organic chloride, using a quaternary organic phosphonium salt compound as a catalyst. Further, since the catalyst can be recovered after use, the present invention is very economical and is thus effective for mass-producing precursors for organic/inorganic hybrid substances.

Abstract: Provided are a surface treatment agent for which hydrophobization to a high degree is possible even in a case of the material of a substrate surface being TiN or SiN, and surface treatment method using such a surface treatment agent. The surface treatment agent according to the present invention contains a cyclic silazane compound. As this cyclic silazane compound, a cyclic disilazane compound such as 2,2,5,5-tetramethyl-2,5-disila-1-azacyclopentane and 2,2,6,6-tetramethyl-2,6-disila-1-azacyclohexane and a cyclic trisilazane compound such as 2,2,4,4,6,6-hexamethylcyclotrisilazane and 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane are preferred. In the surface treatment, a substrate surface is exposed to a surface treatment agent according to the present invention, and the substrate surface is hydrophobized.

Abstract: The invention relates to cyclic aza-sila compounds that are made of 4 to 10 units of the general formulas (I) and (II) bonded by means of Si—Si or Si—N single bonds, wherein Y is selected from among —NR1R2, hydrogen, and a halogen, R1 and R2 are selected from among hydrogen and a hydrocarbon group having 1 to 20 carbon atoms, and R3 is a hydrocarbon group having 1 to 20 carbon atoms, with the stipulation that at least two units of the general formula (I) are bonded to each other in the ring by means of an Si—Si single bond, that at most 35 mol % of the groups Y is a hydrogen, and that at most 15 mol % of the groups Y is a halogen, and to a method for the production thereof.

Abstract: A novel cyclic polyorganosiloxanesilazane, which is a siloxane oligomer having satisfactory reactivity, and is useful as a silylating agent that does not generate reaction residues. Also, a method of producing the cyclic polyorganosiloxanesilazane. The cyclic polyorganosiloxanesilazane is represented by general formula (1) shown below: wherein R1 to R4 each represents an unsubstituted or substituted monovalent hydrocarbon group of 1 to 8 carbon atoms, m is an integer that satisfies 1?m?100 and n is an integer that satisfies 1?n?100, provided that m+n is an integer that satisfies 3?m+n?200, and the (SiR1R2O) units and (SiR3R4NH) units may be bonded randomly.

Abstract: Provided are a surface treatment agent for which hydrophobization to a high degree is possible even in a case of the material of a substrate surface being TiN or SiN, and surface treatment method using such a surface treatment agent. The surface treatment agent according to the present invention contains a cyclic silazane compound. As this cyclic silazane compound, a cyclic disilazane compound such as 2,2,5,5-tetramethyl-2,5-disila-1-azacyclopentane and 2,2,6,6-tetramethyl-2,6-disila-1-azacyclohexane and a cyclic trisilazane compound such as 2,2,4,4,6,6-hexamethylcyclotrisilazane and 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane are preferred. In the surface treatment, a substrate surface is exposed to a surface treatment agent according to the present invention, and the substrate surface is hydrophobized.

Abstract: To provide an aminoaryl-containing organosilicon compound with high efficiency, after protecting amino groups of a haloaniline compound with a specific compound, to form a Grignard reagent and to deprotect the aforementioned groups by reacting the Grignard reagent with a silicon compound.

Abstract: To provide an aminoaryl containing organosilicon compound with high efficiency, after protecting amino groups of a haloaniline compound with a specific compound, to form a Grignard reagent and to deprotect the aforementioned groups by reacting the Grignard reagent with a silicon compound.

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

Abstract: Novel fluorescent polyhedral oligomeric silsesquioxane (POSS) colorants are provided. The colorants are strongly fluorescing and long lasting with excellent light stability. The novel colorants can be prepared from chromophores found in common pigments and provide a simple way to convert an insoluble pigment into a soluble fluorescent colorant.

Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.

Abstract: Metal and metalloid precursors useful for forming metal-containing films on substrates, including amide precursors, tetraalkylguanidinate precursors, ketimate and dianionic guanidinate precursors. The precursors of the invention are readily formed and conveniently used to carry out chemical vapor deposition or atomic layer deposition at low temperature, e.g., at temperature below 400° C.

Abstract: A precursor composition is disclosed for use in the chemical vapor deposition of a material selected from the group consisiting of silicon oxynitride, silicon nitride, and silicon oxide. The composition comprises a hydrazinosilane of the formula: [R12N—NH]nSi(R2)4-n where each R1 is independently selected from alkyl groups of C1 to C6; each R2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1-4.

Abstract: Method is provided for controlling the stereo chemistry of functionalities or X groups to exo or endo positions on a polyhedral oligomeric silsesquioxane (POSS) compound by adding certain reagents to said X groups to change one or more positions thereof to endo or exo. Also provided are the POSS species formed by the above inventive method. Method is also provided for inserting a ring substituent into a POSS compound. Also provided are the POSS species formed by such inventive method.

Abstract: This invention is directed to a group of novel homologous eight membered ring compounds having a metal, such as copper, reversibly bound in the ring and containing carbon, nitrogen, silicon and/or other metals.

Abstract: A process for the preparation of biologically active silicon compounds by hydrolysis of a precursor which produces a compound which prevents the formation of polymers from the silicon hydrolyzed bonds.

Abstract: Cyclopentadineyl compounds of the formula II ##STR1## and formula III ##STR2## their preparation and their use as intermediates in the preparation of metallocene complexes of the formula I.

Abstract: In order to reduce the rate of coke formation during the industrial pyrolysis of hydrocarbons, the interior surface of a reactor is coated with a thin layer of a ceramic material, the layer being deposited by thermal decomposition of a non-oxygen containing silicon-nitrogen precursor in the vapor phase, tin an inert or reducing gas atmosphere in order to minimize the formation of oxide ceramics.

Abstract: A process for preparing hexamethylcyclo-trisilazane by heating octamethylcyclotetra-silazane in the presence of a catalyst such as a Lewis acid or a sulfur compound of the following formula ##STR1## wherein M represents Ca, Mg, Al, Fe or NH.sub.4, R represents OH, a phenyl group or a substituted phenyl group, x is 0, 1 or 2 and y is 0, 1, 2 or 3 provided that x and y are not zero at the same time, and z is 0, 1, 2 or 3.

Abstract: Hexamethylcyclotrisilazane is prepared by reacting dimethyldichlorosilane with ammonia at a temperature between -20.degree. C. and 20.degree. C. Preferably, ammonia is blown into dimethyldichlorosilane at the temperature, and the reaction mixture is washed with 20% or higher alkaline water within one hour from the end of reaction for removing ammonium chloride by dissolving it in the water. Then hexamethylcyclotrisilazane of high purity is prepared in high yields. The method can be scaled up for commercial manufacture.

Abstract: The invention relates to novel polysubstituted chlorine-containing silazane polymers, to their preparation, to their processing to form ceramic material containing silicon nitride, and to said material itself. The chlorine-containing silazane polymers are prepared by reating oligosilazanes of formula (I) ##STR1## in which at least one of the indices a or b and at least one of the indices c or d are not equal to 0 and n is about 2 to about 12, with at least one of the chlorosilanes Cl.sub.2 R.sup.6 Si--CH.sub.2 CH.sub.2 --SiR.sup.6 Cl.sub.2, Cl.sub.3 Si--CH.sub.2 CH.sub.2 --SiR.sup.7 Cl.sub.2, R.sup.8 SiCl.sub.3 or R.sup.9 SiHCl.sub.2 at 30.degree. C. to 300.degree. C., where the radicals independently of one another have the following meanings: R.sup.1, R.sup.2, R.sup.4 =H, C.sub.1 -C.sub.6 alkyl or C.sub.2 -C.sub.6 alkenyl and R.sup.3, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9 =C.sub.1 -C.sub.6 alkyl or C.sub.2 -C.sub.6 alkenyl.

Abstract: The invention relates to novel polymeric chlorosilazanes, to their preparation, to their processing to form ceramic material containing silicon nitride, and to said material itself. The polymeric chlorosilazanes are prepared by reacting a mixture of oligosilazanes of formula (I) ##STR1## in which n is about 2 to about 12, and oligosilazanes of formula (II), (RSiHNH).sub.m, in which m is about 3 to about 12, with at least one of the chlorosilanes Cl.sub.2 R.sup.2 Si--CH.sup.2 --CH.sub.2 --SiR.sup.2 Cl.sub.2, Cl.sub.3 Si--CH.sub.2 --CH.sub.2 --SiR.sup.3 Cl.sub.2, R.sup.4 SiCl.sup.3 or R.sup.5 SiHCl.sub.2 at 30.degree. C. to 300.degree. C., where R and R.sup.1 to R.sup.5 are C.sub.1 -C.sub.6 alkyl or C.sub.2 -C.sub.6 alkenyl groups which can be identical or different.The polymeric chlorosilazanes according to the invention can be converted into polysilazanes by reaction with ammonia, and these in turn can be pyrolyzed to form ceramic materials containing silicon nitride.

Abstract: The invention relates to novel polysilazanes, the preparation thereof, the further processing thereof to form silicon nitride-containing ceramic material, and this material itself. In order to prepare the polysilazanes, dialkylaminoorganyldichlorosilanes of the formula RSiCL.sub.2 --NR'R' are reacted with ammonia. The polysilazanes can then be pyrolyzed to form silicon nitride-containing ceramic material. The polysilazanes according to the invention dissolve in customary aprotic solvents.

Abstract: According to the method for preparing hexamethyl cyclotrisilazane of the present invention, hexamethyl cyclotrisilazane can be obtained by heating a linear or cyclic silazane compound represented by the following general formula:--(Me.sub.2 SiNH).sub.n --(wherein Me represents a methyl group and n is an integer of not less than 4) in the presence of at least one catalytic compound selected from the group consisting of ammonium salts of arylsulfonic acids and/or aminoarylsulfonic acids and the resulting hexamethyl cyclotrisilazane represented by the formula: --Me.sub.2 SiNH).sub.3 -- can be recovered by distilling off the same outside the reaction system. According to the method of the present invention, highly pure hexamethyl cyclotrisilazane can be industrially prepared in good efficiency and in a high yield.

Abstract: Silanol-terminated aromatic imide compounds of Formula I ##STR1## where R.sub.3 and R.sub.4 are each selected from the group consistsing of a C.sub.1 to C.sub.6 alkyl group, an unsubstituted aryl group and a substituted aryl group, Z is a divalent radical.are prepared by: (a) reacting a bromoaniline compound with a chosen silylating agent to form a compound having the formula BrC.sub.6 H.sub.5 NSi(R.sub.1).sub.3 Si(R.sub.2).sub.3, where R.sub.1 and R.sub.2 are each a C.sub.1 to C.sub.4 alkyl group(b) reacting the compound formed in step "a" with n-butyllithium, followed by reaction with a chosen halogenated alkylsilane compound to form a compound having Formula II ##STR2## where R.sub.1, R.sub.2, R.sub.3, and R.sub.4 are as defined above (c) reacting the compound of Formula II formed in step "b" with a dianhydride compound having the formula ##STR3## where Z is as defined above to form a compound having Formula III ##STR4## where R.sub.3, R.sub.

Abstract: Silazanes and related compounds are prepared by providing a precursor containing one or more cyclic silazane units, causing polymerization to occur in the presence of a transition metal catalyst to form a polysilazane product. Further products may result from additional reaction. The novel compounds may be pyrolyzed to yield ceramic materials such as silicon nitride, silicon carbide and mixtures thereof. In a preferred embodiment, substantially pure silicon nitride and articles prepared therefrom are provided. Fibers, coatings, binders and the like may be prepared from the novel materials.

Abstract: What is disclosed is a process for the rearrangement of cylcoorganopolysilazanes to cycloorganotrisilazanes using quaternary ammonium halides as a catalyst. The quaternary ammonium halide has the formula R.sup.i.sub.4 NX where at least one R.sup.i is a group containing greater than 11 carbon atoms and X is a halogen atom. The rearrangement process is ran either as a batch or a continuous distillation procedure.

Abstract: A novel polyorgano(hydro)silazane having the compositional formula: (RSiHNH).sub.x [(RSiH).sub.1.5 N].sub.1-x, wherein R is an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, another group in which the atom directly bound to Si is carbon, an alkylsilyl group, an alkylamino group, or an alkoxy group, and 0.4<x<1. This polyorgano(hydro)silazane is produced by reacting a complex of organo(hydro)diholosilane and a base with dry ammonia. This novel silazane is useful as a ceramic starting material, a polymer hardening agent, a densifying agent, a surface coating material, etc., and can be produced safely and at a low cost.

Abstract: Cyclic silazanes which are particularly useful for the formation of silicon nitrides have the general formula: ##STR1## wherein Me represents methyl (CH.sub.3), n=3-6, x=0-1 and y=0.25-1. These N-methylhydridosilazanes are a convenient source of silicon nitride by chemical vapor deposition to form films for masking layers and dielectric coatings with reduced levels of silicon carbide contamination in the silicon nitride. Low molecular weight, linear polymers of the N-methylhydridosilazanes are also useful in the preparation of silicon nitrides by evaporation from liquid solutions and subsequent pyrolysis and are particularly useful for infiltration of refractories. Particularly preferred compounds of the invention are 2,6 di-N-methyl-1,3,5,7-tetramethylcyclotetrasilazane; 2,4,6,8-tetra-N-methyl-1,5-dimethylcyclotetrasilazane and their polymeric derivatives.

Abstract: Cyclotrisilazanes, including hexamethylcyclotrisilazane, a difunctional blocking agent used to derivatize and protect active hydrogen-containing substrates during chemical analysis and synthetic reactions, may be prepared by heating cyclotetrasilazanes using a Group VIII catalyst in the presence of hydrogen. In addition, the average degree of polymerization of cyclosilazane compositions may be reduced.