Abstract: Methods are described for the economical manufacture of Scanning Probe and Electron Microscope (SPEM) probe tips. In this method, multiple wires are mounted on a stage and ion milled simultaneously while the stage and mounted probes are tilted at a selected angle relative to the ion source and rotated. The resulting probes are also described. The method provides sets of highly uniform probe tips having controllable properties for stable and accurate scanning probe and electron microscope (EM) measurements.

Abstract: A device for measuring a tension of a bio-object construct as it is being stretched that includes a microscope, a holding member for accommodating the bio-object, and a probe. The microscope includes a condenser, an objective and a stage positioned therebetween. The stage is movable along a horizontal plane. The holding member is fixable on the stage. The probe has a first end attached to the condenser, and a second end placed in the holding member. The stage operably moves such that the bio-object construct moves toward the second end of the probe and contacts with the second end of the probe, thereby causing a displacement of the second end of the probe and a displacement of the bio-object construct, which are used to measure the tension of the bio-object construct.

Abstract: A sensing probe may be formed of a diamond material comprising one or more spin defects that are configured to emit fluorescent light and are located no more than 50 nm from a sensing surface of the sensing probe. The sensing probe may include an optical outcoupling structure formed by the diamond material and configured to optically guide the fluorescent light toward an output end of the optical outcoupling structure. An optical detector may detect the fluorescent light that is emitted from the spin defects and that exits through the output end of the optical outcoupling structure after being optically guided therethrough. A mounting system may hold the sensing probe and control a distance between the sensing surface of the sensing probe and a surface of a sample while permitting relative motion between the sensing surface and the sample surface.

Abstract: The invention provides a nanoantenna scanning probe tip for microscropy or spectroscopy. The nanoantenna scanning probe tip includes a sharp probe tip covered with a contiguous film of predetermined sized and shaped plasmonic nanoparticles. A method for forming the nanoantenna scanning probe tip by trapping nanoparticles having a predetermined size and shape at a liquid surface using surface tension, forming a uniform and organized monolayer film on the liquid surface, and then transferring portions of the film to a sharp probe tip. In preferred embodiments, the sharp probe tip is one of a conductive STM (scanning tunneling microscopy) tip, a tuning fork tip or an AFM (atomic force microscopy) tip. The sharp tip can be blunted with an oxide layer.

Abstract: In a quantification method for an electrode material, information regarding a distribution of a material in an electrode is obtained. Information regarding a distribution of resistance in the electrode is obtained. A scatter diagram is produced based on the information regarding the distribution of the material and the information regarding the distribution of the resistance. The scatter diagram is divided into a plurality of regions. The material constituting the electrode is quantified based on the divided regions.

Abstract: An ion implant apparatus and moveable ion beam current sensor are described. Various examples provide moving the ion beam current sensor during an ion implant process such that a distance between the ion beam current sensor and a substrate is maintained during scanning of the ion beam toward the substrate. The ion beam current sensor is disposed on a moveable support configured to move the ion beam current sensor in a first direction corresponding to the scanning of the ion beam while the substrate is moved in a second direction.

Abstract: Provided is a fusion measurement apparatus which increases or maximizes the reliability of a measurement. The fusion measurement apparatus includes an atomic microscope for measuring a surface of a substrate at an atomic level, an electron microscope for measuring the atomic microscope and the substrate, and at least one electrode which distorts the path of a secondary electron on the substrate covered by a cantilever of the atomic microscope so that the secondary electron proceeds to an electron detector of the electron microscope.

Abstract: There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.

Abstract: An embodiment of a scanning tunneling microscope (STM) reactor includes a pressure vessel, an STM assembly, and three spring coupling objects. The pressure vessel includes a sealable port, an interior, and an exterior. An embodiment of an STM system includes a vacuum chamber, an STM reactor, and three springs. The three springs couple the STM reactor to the vacuum chamber and are operable to suspend the scanning tunneling microscope reactor within the interior of the vacuum chamber during operation of the STM reactor. An embodiment of an STM assembly includes a coarse displacement arrangement, a piezoelectric fine displacement scanning tube coupled to the coarse displacement arrangement, and a receiver. The piezoelectric fine displacement scanning tube is coupled to the coarse displacement arrangement. The receiver is coupled to the piezoelectric scanning tube and is operable to receive a tip holder, and the tip holder is operable to receive a tip.

Abstract: A method and system for performing simultaneous topographic and elemental chemical and magnetic contrast analysis in a scanning, tunneling microscope. The method and system also includes nanofabricated coaxial multilayer tips with a nanoscale conducting apex and a programmable in-situ nanomanipulator to fabricate these tips and also to rotate tips controllably.

Abstract: Disclosed is a method for measuring the force interaction caused by a sample, wherein a bias voltage, with respect to the sample, is applied between a tip, and the tip is guided at such a small distance to the sample that a measurable current flows between the tip and the sample, and a sensor and signal converter S, which changes the current flowing through the tip-sample contact depending on the intensity of the force interaction, is formed and used in the region of the force interaction. A scanning tunneling microscope therefor is disclosed.

Abstract: The apparatus includes a probe tip configured to scan a substrate having a defect to attach the defect on the probe tip while scanning the substrate, a cantilever configured to integrate a holder holding at least one probe tip, a stage configured to secure the substrate, an electromagnetic radiation source configured to generate the electromagnetic radiation beam, and an electromagnetic radiation detector configured to receive the first electromagnetic radiation signal and the second electromagnetic radiation signal. A first electromagnetic radiation signal is generated while an electromagnetic radiation beam focuses on the probe tip. A second electromagnetic radiation signal is generated while the electromagnetic radiation beam focuses on the sample attached on the probe tip. A chemical analysis of the sample is executed by comparing a difference between the first electromagnetic radiation signal and the second electromagnetic radiation signal.

Abstract: Provided in one embodiment is a method, comprising: forming a part comprising a bulk amorphous alloy, wherein the part comprises a sampling portion; determining a parameter related to the part by detecting by imaging on a surface of the sampling portion presence of crystals of the alloy; and evaluating the part based on the parameter.

Abstract: Apparatus for generating a microwave frequency comb (MFC) in the DC tunneling current of a scanning tunneling microscope (STM) by fast optical rectification, caused by nonlinearity of the DC current vs. voltage curve for the tunneling junction, of regularly-spaced, short pulses of optical radiation from a focused mode-locked, ultrafast laser, directed onto the tunneling junction, is described. Application of the MFC to high resolution dopant profiling in semiconductors is simulated. Application of the MFC to other measurements is described.

Abstract: Apparatus for generating a microwave frequency comb (MFC) in the DC tunneling current of a scanning tunneling microscope (STM) by fast optical rectification, caused by nonlinearity of the DC current vs. voltage curve for the tunneling junction, of regularly-spaced, short pulses of optical radiation from a focused mode-locked, ultrafast laser, directed onto the tunneling junction, is described. Application of the MFC to high resolution dopant profiling in semiconductors is simulated. Application of the MFC to other measurements is described.

Abstract: A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.

Abstract: A dynamic probe detection system (29,32) is for use with a scanning probe microscope of the type that includes a probe (18) that is moved repeatedly towards and away from a sample surface. As a sample surface is scanned, an interferometer (88) generates an output height signal indicative of a path difference between light reflected from the probe (80a,80b,80c) and a height reference beam. Signal processing apparatus monitors the height signal and derives a measurement for each oscillation cycle that is indicative of the height of the probe. This enables extraction of a measurement that represents the height of the sample, without recourse to averaging or filtering, that may be used to form an image of the sample. The detection system may also include a feedback mechanism that is operable to maintain the average value of a feedback parameter at a set level.

Abstract: A method of monitoring of semiconductor processes is provided that includes monitoring the processes using a scanning probe microscope (SPM), where a first partition is located below a second partition, where the second partition is hermetically isolated from the first partition, where a SPM probe tip of the SPM is disposed in the first partition, where a remaining portion of the SPM is disposed in the second partition that is hermetically isolated from the first partition, and where the semiconductor processes may occur in either the first partition or a third partition.

Abstract: It is difficult for a scanning probe microscope according to the conventional technology to operate a probe for scanning and positioning in a wide range and for high-precision scanning in a narrow range. A scanning probe microscope according to the invention uses probe driving actuators for coarse adjustment and fine adjustment. For scanning and positioning in a wide range, the coarse adjustment actuator is switched to fast responsiveness. For scanning in a narrow range, the coarse adjustment actuator is switched to slow responsiveness. Instead, positional noise is reduced and the fine adjustment actuator is mainly used for scanning in a narrow range. The probe is capable of not only scanning and positioning in a wide range but also high-precision scanning in a narrow range.

Abstract: Disclosed is a method for examining a sample using a scanning tunneling microscope, wherein before or during image recording, a contrast agent is applied to at least one location on the tip of the scanning tunneling microscope and/or on the sample, which is part of the tunneling contact during the image recording, while a temperature less than or equal to the condensation temperature of the contrast agent is set at this location. A corresponding scanning tunneling microscope is disclosed.

Abstract: The invention is directed to a probe for scanning probe microscopy. The probe 20 comprises a tunnel-current conducting part 30 and a tunnel-current insulating part 40. The said parts are configured such that the insulating part determines a minimal distance between the conducting part 30 and the sample surface. The invention may further concern a scanning probe microscope having such a probe, and a corresponding scanning probe microscopy method. Since the distance to the sample surface 100 is actually determined by the insulating part 40, controlling the vertical position of the probe 20 relative to the sample surface is easily and rapidly achieved. The configuration of the parts allows for a fast scan of the sample surface, whereby high-speed imaging can be achieved. Further, embodiments allow for topographical variations to be accurately captured through tunneling effect.

Abstract: A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.

Abstract: An embodiment of a scanning tunneling microscope (STM) reactor includes a pressure vessel, an STM assembly, and three spring coupling objects. The pressure vessel includes a sealable port, an interior, and an exterior. An embodiment of an STM system includes a vacuum chamber, an STM reactor, and three springs. The three springs couple the STM reactor to the vacuum chamber and are operable to suspend the scanning tunneling microscope reactor within the interior of the vacuum chamber during operation of the STM reactor. An embodiment of an STM assembly includes a coarse displacement arrangement, a piezoelectric fine displacement scanning tube coupled to the coarse displacement arrangement, and a receiver. The piezoelectric fine displacement scanning tube is coupled to the coarse displacement arrangement. The receiver is coupled to the piezoelectric scanning tube and is operable to receive a tip holder, and the tip holder is operable to receive a tip.

Abstract: A The local probe microscopy apparatus (1) comprises a probe (3) with translation stages (5a, 5b) for controlling the position of the probe (3) relative to a sample surface. The probe (3) has a feedback mechanism (6, 5 7) for maintaining the deflection of the probe and a height measuring system (9) which includes means for compensating for environmental noise. The local probe microscopy apparatus is particularly suitable for use as a wafer inspection tool in a wafer fabrication plant where the inspection tool is liable to be exposed to significant mechanical vibration.

Abstract: Disclosed is a method for measuring the force interaction caused by a sample, wherein a bias voltage, with respect to the sample, is applied between a tip, and the tip is guided at such a small distance to the sample that a measurable current flows between the tip and the sample, and a sensor and signal converter S, which changes the current flowing through the tip-sample contact depending on the intensity of the force interaction, is formed and used in the region of the force interaction. A scanning tunneling microscope therefor is disclosed.

Abstract: A method comprising characterizing the dimensions of structures on a semiconductor device having dimensions less than approximately 100 nanometers (nm) using one of scanning probe microscopy (SPM) or profilometry.

Abstract: A cantilever has a probe portion and a cantilever portion having a free end portion from which the probe portion extends. A displacement detecting portion detects a displacement of the cantilever portion according to an interaction between a sample and the probe portion. An electrode portion is connected to the displacement detecting portion. An insulation film is formed over at least one of the electrode portion and the displacement detecting portion. A functional coating in the form one of a conductive film, a magnetic film, and a film having a light intensity amplifying effect is disposed on the insulation film.

Abstract: An object of the invention is to provide a method and apparatus for observing inside structures and a specimen holder, wherein aging degradation of a good sample to a bad sample can be tracked in the same field of view, using the same specimen in order to determine the mechanism of failure. The present invention is a method for observing inside structures. The method comprises irradiating a specimen with a corpuscular beam generated from a corpuscular beam source, detecting transmitted particles transmitted by the specimen, applying a voltage to a portion of the specimen, and observing of a detection status of the transmitted particles in the voltage-applied portion as needed.

Abstract: A spin-torque probe microscope and methods of using the same are described. The spin-torque probe microscope includes a cantilever probe body, a magnetic tip disposed at a distal end of the cantilever probe body, an electrically conductive sample disposed proximate to the magnetic tip, an electrical circuit providing a spin-polarized electron current to the electrically conductive sample, and a vibration detection element configured to sense vibration frequency of the cantilever probe body. The spin-polarized electron current is sufficient to alter a local electron spin or magnetic moment within the electrically conductive sample and be sensed by the magnetic tip.

Abstract: The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention.

Abstract: A lapping system for lapping portions of a workpiece. The lapping system includes, a lap that is defined by a surface. Portions of the surface are a lapping surface. The lapping surface has a coating that enhances material removal from a workpiece in a lapping process. The lapping system further includes, a scanning probe microscope having a tip and a substrate. The scanning probe microscope controls lapping motion of the lap and workpiece.

Abstract: Disclosed is a method for examining a sample using a scanning tunneling microscope, wherein before or during image recording, a contrast agent is applied to at least one location on the tip of the scanning tunneling microscope and/or on the sample, which is part of the tunneling contact during the image recording, while a temperature less than or equal to the condensation temperature of the contrast agent is set at this location. A corresponding scanning tunneling microscope is disclosed.

Abstract: In an atom probe or other mass spectrometer wherein a specimen is subjected to ionizing pulses (voltage pulses, thermal pulses, etc.) which induce field evaporation of ions from the specimen, the evaporated ions are then subjected to corrective pulses which are synchronized with the ionizing pulses. These corrective pulses have a magnitude and timing sufficient to reduce the velocity distribution of the evaporated ions, thereby resulting in increased mass resolution for the atom probe/mass spectrometer. In a preferred arrangement, ionizing pulses are supplied to the specimen from a first counter electrode adjacent the specimen. The corrective pulses are then supplied from a second counter electrode which is coupled to the first via a passive or active network, with the network controlling the form (timing, amplitude, and shape) of the corrective pulses.

Abstract: A scanning probe microscope system capable of identifying an element with atomic scale spatial resolution comprises: an X-ray irradiation means for irradiating a measurement object with high-brilliance monochromatic X-rays having a beam diameter smaller than 1 mm; a probe arranged to oppose to the measurement object; a processing means for detecting and processing a tunneling current through the probe; and a scanning probe microscope having an alignment means for relatively moving the measurement object, the probe, and the incident position of the high-brilliance monochromatic X-rays to the measurement object.

Abstract: Provided is a scanning probe microscope (SPM), a probe of which can be automatically replaced and the replacement probe can be attached onto an exact position. The SPM includes a first scanner that has a carrier holder, and changes a position of the carrier holder in a straight line; a second scanner changing a position of a sample on a plane; and a tray being able to store a spare carrier and a spare probe attached to the spare carrier. The carrier holder includes a plurality of protrusions.

Abstract: A scanning probe microscope includes a plate moveable in an x-axis direction, a y-axis direction, and a z-axis direction, and a probe tip coupled to the plate. A plurality of actuators cooperate to move the probe tip with three degrees of freedom of movement.

Abstract: The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention.

Abstract: A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.

Abstract: The invention relates to a method for examining a measurement object (2, 12), in which the measurement object (2, 12) is examined by means of scanning probe microscopy using a measurement probe (10) of a scanning probe measurement device, and in which at least one subsection (1) of the measurement object (2, 12) is optically examined by an optical measurement system in an observation region associated with the optical measurement system, wherein a displacement of the at least one subsection (1) of the measurement object (2, 12) out of the observation region which is brought about by the examination by means of scanning probe microscopy is corrected in such a way that the at least one displaced subsection (1) of the measurement object (2, 12) is arranged back in the observation region by means of a readjustment device which processes data signals that characterize the displacement.