Abstract: An ion beam generator includes an emission electrode, an extraction electrode, and an electricity generator. The emission electrode includes a substrate and a plurality of nanowires extending away from the substrate, substantially towards the extraction electrode, the nanowires having a length of 50 nm to 50 ?m. The emission electrode has a source of ions including a sheet of ionic liquid formed on the substrate and at least partially immersing the nanowires. The nanowires and the substrate are electrically insulating or semiconducting, and the electricity generator is connected to the sheet of ionic liquid. The emission electrode is thus capable of sending ion beams from the ionic liquid to the extraction electrode.

Abstract: A particle beam generator for a particle beam device may be operated. A liquid metal may be provided from a container of a particle source to an emission device of the particle source and a first heating cycle for cleaning the particle source performed, which may comprise supplying a heating current to a heating device arranged at the emission device using a current supply unit, heating the emission device during a heating time period, measuring a value of a voltage drop at the heating device and/or at the current supply unit and adjusting at least one of: the heating current and the heating time period using the current supply unit, depending on the measured value of the voltage drop. A second heating cycle for cleaning the particle source may include using at least one of: the adjusted heating current and the adjusted heating time period, for heating the emission device.

Abstract: A method for exposing a buried defect, the method may include illuminating, by a radiation source, an object that comprises the buried defect, with illuminating radiation that passes through radiation transparent part of a chuck, while the object is supported by the chuck; detecting, by a sensor, a detected radiation that passed through the object, to provide a visual indication about the buried defect, wherein the visual indication is indicative of a location of the buried defect; setting, based on the location of the buried object and a spatial relationship between a cleaving element and the sensor, a cleaving axis of a cleaving element to virtually cross the buried defect; and cleaving, by the cleaving element, the object to expose the buried object.

Abstract: A method for two-dimensional imaging of a positron emitter distribution in objects to be examined, wherein the object to be examined includes a positron emitter, includes positioning the object to be examined in a magnetic field, wherein the positrons leaving the object to be examined follow the course of the magnetic field and strike a positron absorber which is likewise positioned in the magnetic field and which, upon interaction with the positrons, allows localization of the impact points of the positrons on the positron absorber.

Abstract: The objective of the present invention is to propose a charged particle beam device with which an imaging optical system and an irradiation optical system can be adjusted with high precision. In order to achieve this objective, provided is a charged particle beam device comprising: a first charged particle column which serves as an irradiation optical signal; a deflector that deflects charged particles which have passed through the inside of the first charged particle column toward an object; and a second charged particle column which serves as an imaging optical system.

Abstract: Provided is a charged particle beam device with high sensitivity, capable of detecting charged particles emitted from a sample at high resolution. An absorption current detector arranged to contact with the sample makes an absorption current generated in the sample by an irradiated charged particle beam flow through the detector, thereby to detect the current. The charged particle beam scans the sample and the charged particle beam device acquires an absorption current image. In case the absorption current detector is arranged separated from the sample, the absorption current detector detects the incident charged particle beam as a signal current dependent on an angle ? formed in a direction from the irradiation position on the sample toward the absorption current detector relative to at least one of the normal line direction of the front surface of the sample and the incident direction of the charged particle beam.

Abstract: Provided is a charged particle beam device having an energy filter. In one embodiment, a charged particle beam device includes a deflector to deflect charged particles emitted from a sample to an energy filter, and a change in brightness value with the change of voltage applied to the energy filter is found for each of a plurality of deflection conditions for the deflector, and a deflection condition such that a change in the brightness value satisfies a predetermined condition is set as the deflection condition for the deflector.

Abstract: A focused ion beam system includes a focused ion beam irradiation mechanism which irradiates a sample, on which a protective film is formed, with a focused ion beam from above the sample, a processing control unit which performs a removal process on both sides of a region to be a thin piece portion of the sample by the focused ion beam and sequentially forms observation surfaces parallel to an irradiation direction of the focused ion beam so as to achieve the thin piece portion, and an observation surface image generation unit which generates an observation surface image. The processing control unit terminates the removal process when a height of the protective film in the irradiation direction of the focused ion beam becomes a predetermined threshold value or less in the observation surface image.

Abstract: The invention is directed to a patterned aerogel-based layer that serves as a mold for at least part of a microelectromechanical feature. The density of an aerogel is less than that of typical materials used in MEMS fabrication, such as poly-silicon, silicon oxide, single-crystal silicon, metals, metal alloys, and the like. Therefore, one may form structural features in an aerogel-based layer at rates significantly higher than the rates at which structural features can be formed in denser materials. The invention further includes a method of patterning an aerogel-based layer to produce such an aerogel-based mold. The invention further includes a method of fabricating a microelectromechanical feature using an aerogel-based mold. This method includes depositing a dense material layer directly onto the outline of at least part of a microelectromechanical feature that has been formed in the aerogel-based layer.

Abstract: An ion beam apparatus includes an ion source configured to emit an ion beam, a condenser lens electrode that condenses the ion beam, and a condenser lens power source configured to apply a voltage to the condenser lens electrode. A storage portion stores a first voltage value, a second voltage value, a third voltage value, and a fourth voltage value. A control portion retrieves the third voltage value from the storage portion and sets the retrieved third voltage value to the condenser lens power source when an observation mode is switched to a wide-range observation mode, and retrieves the fourth voltage value from the storage portion and sets the retrieved fourth voltage value to the condenser lens power source when a processing mode is switched to the wide-range observation mode.

Abstract: An excitation voltage biases an ionic conducting material sample over a nanoscale grid. The bias sweeps a modulated voltage with increasing maximal amplitudes. A current response is measured at grid locations. Current response reversal curves are mapped over maximal amplitudes of the bias cycles. Reversal curves are averaged over the grid for each bias cycle and mapped over maximal bias amplitudes for each bias cycle. Average reversal curve areas are mapped over maximal amplitudes of the bias cycles. Thresholds are determined for onset and ending of electrochemical activity. A predetermined number of bias sweeps may vary in frequency where each sweep has a constant number of cycles and reversal response curves may indicate ionic diffusion kinetics.

Abstract: An excitation voltage biases an ionic conducting material sample over a nanoscale grid. The bias sweeps a modulated voltage with increasing maximal amplitudes. A current response is measured at grid locations. Current response reversal curves are mapped over maximal amplitudes of the bias cycles. Reversal curves are averaged over the grid for each bias cycle and mapped over maximal bias amplitudes for each bias cycle. Average reversal curve areas are mapped over maximal amplitudes of the bias cycles. Thresholds are determined for onset and ending of electrochemical activity. A predetermined number of bias sweeps may vary in frequency where each sweep has a constant number of cycles and reversal response curves may indicate ionic diffusion kinetics.

Abstract: A method for interrogating a surface using scanning ion conductance microscopy (SICM), comprising the steps of: a) repeatedly bringing a SICM probe into proximity with the surface at discrete, spaced locations in a region of the surface and measuring surface height at each location; b) estimating surface roughness or other characteristic for the region based upon the surface height measurements; and c) repeatedly bringing the probe into proximity with the surface at discrete, spaced locations in the region, the number and location of which is based upon the estimated surface roughness or other characteristic in the region, and obtaining an image of the region with a resolution adapted to the surface roughness or other characteristic.

Abstract: An apparatus for performing magnetic resonance force microscopy on one or more large area samples comprising a base plate, one or more heat sink plates coupled to the base plate, one or more suspension mechanisms coupled to the base plate and the heat sink plates, a probe head suspended from the one or more suspension mechanisms for scanning the one or more samples and a sample cylinder comprising a sample stage coupled to the probe head for sample positioning and an outer drum for isolating the sample stage.

Abstract: The present invention allows simple and sensitive detection of microimpurities, microdefects, and corrosion starting points which may be present in a material. A probe microscope has a function to sense ions diffused from a specimen in a liquid. A probe is caused to scan over a predetermined range on a specimen. Then, the probe is fixed to a particular position in a liquid so as to set the distance between the specimen and the probe to a given value at which the microstructure of the specimen surface cannot be observed. Thereafter, one of the current between the probe and a counter electrode and the potential between the probe and a reference electrode is controlled, and the other of the current and potential which varies in accordance with the control is measured. Thus, ions diffused from the specimen are sensed.

Abstract: The subject invention concerns methods for interrogating a surface using scanning ion conductance microscopy (SICM). In one embodiment, a method of the invention comprises the steps of: a) repeatedly bringing a SICM probe into proximity with the surface at discrete, spaced locations in a region of the surface and measuring surface height at each location; b) estimating surface roughness or other characteristic for the region based upon the surface height measurements; and c) repeatedly bringing the probe into proximity with the surface at discrete, spaced locations in the region, the number and location of which is based upon the estimated surface roughness or other characteristic in the region, and obtaining an image of the region with a resolution adapted to the surface roughness or other characteristic.

Abstract: An elongate probe (50) for use in probe microscopy comprises a module (51) provided between a probe tip (53) and a driver (52). In use the driver (52) applies oscillations to the module (51) which are transmitted by the module to the tip (53). With the probe tip (53) positioned close to the surface of a sample, any phase variance in the oscillation of the tip with respect to the driving oscillation is representative of an interaction between the tip and the sample surface. The elongate arrangement of the probe (50) is particularly beneficial when used to probe samples which require a liquid environment.

Abstract: An ion detector comprises an ion guide with electrodes arranged about a first axis; a positive ion detection device with an ion inlet at a first side of the ion output section offset from and at an angle to the first axis; and a negative ion detection device with an ion inlet at a second side opposite the first side, offset from and at an angle to the first axis. A negative voltage bias applied to the positive ion device accelerates positive ions toward the inlet along a path including a component along a second axis orthogonal to the first axis. A positive voltage bias applied to the negative ion detection device accelerates negative ions toward the inlet along a path that includes a component along the second axis orthogonal to the first axis in a direction generally opposite to the path of the positive ions.

Abstract: A method for interrogating a surface using scanning probe microscopy comprises bringing a scanning probe into proximity with the surface and controlling the position of the probe relative to the surface to maintain a constant distance, characterized in that pressure is applied to the surface by a regulated flow of liquid through the probe, with subsequent monitoring of the position of the probe, wherein movement of the probe indicates a consequent movement of the surface.