Abstract: A semiconductor device may include a substrate, and an array of PCM memory cells above the substrate. Each PCM memory cell may include first and second vertically aligned electrodes, a first dielectric layer between the first and second electrodes, a carbon nanotube extending vertically through the first dielectric layer from the second electrode and toward the first electrode, and a PCM body between the first electrode and the at least one carbon nanotube.

Abstract: An electron emission device and a method of manufacturing the same are provided. The electron emission device includes: i) a substrate including a metal tip; ii) carbon nano tubes that are positioned on the metal tip; and iii) a lithium layer that is positioned on the carbon nano tubes.

Abstract: The present invention provides apparatus and methods for growing fullerene nanotube forests, and forming nanotube films, threads and composite structures therefrom. In some embodiments, an interior-flow substrate includes a porous surface and one or more interior passages that provide reactant gas to an interior portion of a densely packed nanotube forest as it is growing. In some embodiments, a continuous-growth furnace is provided that includes an access port for removing nanotube forests without cooling the furnace substantially. In other embodiments, a nanotube film can be pulled from the nanotube forest without removing the forest from the furnace. A nanotube film loom is described. An apparatus for building layers of nanotube films on a continuous web is described.

Abstract: A method for producing carbon nanotubes having specific lengths, said method comprising: producing carbon nanotubes having at least two types of zones along their lengths, wherein each zone type has a characteristic structure that confers specific properties; and processing said carbon nanotubes to selectively attack one zone type more aggressively than another zone type.

Abstract: A method for forming a graphite-based device on a substrate having a plurality of zones is provided where the substrate is carbon doped in zones. Each such zone comprises a plurality of dopant profiles. One or more graphene stacks are generated in the doped zones. A graphene stack so generated comprises a non-planar graphene layer characterized by a bending angle, curvature, characteristic dimension, graphene orientation, graphene type, or combinations thereof. A method for forming a graphite-based device on a substrate is provided, the substrate comprising a graphene foundation material and a plurality of zones. The substrate is patterned to form features in the zones. One feature comprises a non-planar surface or at least two adjacent surfaces that are not coplanar. One or more graphene stacks are concurrently generated, at least one of which comprises a non-planar graphene layer overlaying the non-planar surface or the at least two adjacent surfaces.

Abstract: A method of separating metallic semiconducting carbon nanotubes includes providing a source of a mixture of semiconducting and metallic carbon nanotubes in a carrier liquid with one of the semiconducting and metallic carbon nanotubes being functionalized to carry a charge. The mixture is pressurized to cause a liquid jet of the mixture to be emitted through a nozzle. A drop formation mechanism modulates the liquid jet to form from the jet first and second drops traveling along a path. An electric field modulating device, positioned relative to the jet, produces first and second electric fields. A deflection device applies the first electric field as the first drop is formed to concentrate the functionalized carbon nanotubes in the first drop and applies the second electric field as the second drop is formed. The deflection device causes the first or second drop to begin traveling along another path.

Abstract: A graphene electronic device and a method of fabricating the graphene electronic device are provided. The graphene electronic device may include a graphene channel layer formed on a hydrophobic polymer layer, and a passivation layer formed on the graphene channel layer. The hydrophobic polymer layer may prevent or reduce adsorption of impurities to transferred graphene, and a passivation layer may also prevent or reduce adsorption of impurities to a heat-treated graphene channel layer.

Abstract: A method for making a carbon nanotube composite film is provided. A PVDF is dissolved into a first solvent to form a PVDF solution. A number of magnetic particles is dispersed into the PVDF solution to form a suspension. A carbon nanotube film is immersed into the suspension and then transferred into a second solvent. The carbon nanotube film structure is transferred from the second solvent and dried to form the carbon nanotube composite film.

Abstract: A photovoltaic device includes a substrate; a back contact layer disposed above the substrate; an absorber layer for photon absorption disposed above the back contact layer; a buffer layer disposed above the absorber layer; a conductive coating disposed above the buffer layer; and a transparent conductive layer disposed over the conductive coating. The conductive coating includes at least one type of nanomaterial, which has at least one dimension in the range of from 0.5 nm to 1000 nm.

Abstract: Methods for converting graphite oxide into graphene by exposure to electromagnetic radiation are described. As an example, graphene oxide may be rapidly converted into graphene upon exposure to converged sunlight.

Abstract: The present disclosure generally relates to conductive films and methods for forming conductive films. In some examples, a substrate may be provided having a dispersion of silica nanoparticles provided on a surface thereof. Carbon nanotubes may be adhered to the dispersion of silica nanoparticles on the surface of the substrate to provide the conductive film on the substrate.

Abstract: Embodiments of the present invention are directed to an energy storage device and a method for manufacturing the energy storage device. The method includes accessing a metal substrate and forming plurality of carbon nanotubes (CNTs) directly on a metal substrate. The method further includes removing substantially all amorphous carbon from said plurality of CNTs and coupling the plurality of CNTs to an electrolytic separator.

Abstract: A method for making a thermionic electron emission device. The method includes the following steps. First, an insulating substrate is provided. Second, a number of lattices are formed on the insulating substrate. Third, a first electrode and a second electrode are fabricated in each lattice on the insulating substrate. Fourth, a carbon nanotube film structure is provided and at least part of the carbon nanotube film is suspended structure above the insulating substrate. Sixth, excess carbon nanotube film structure is cut away to obtain a number of thermionic electron emitters. The thermionic electron emitters are spaced from each other and located between the first electrode and the second electrode in each lattice.

Abstract: A polarizer includes a substrate, a carbon nanotube film, and a number of metal particles. The carbon nanotube film is located over the substrate and includes a number of carbon nanotube yarns, each of which comprises a number of substantially parallelly bundled carbon nanotubes. The metal particles are adhered to the carbon nanotubes of the carbon nanotube film.

Abstract: A method for culturing neural cells using a culture medium is provided. Each neural cell includes a neural cell body and at least one neurite branched from the neural cell body. The culture medium includes a substrate and a carbon nanotube structure located on the substrate. A surface of the carbon nanotube structure is polarized to form a polar surface. The neural cells are cultured on the polar surface to grow neurites along the carbon nanotube wires. The carbon nanotube structure includes a number of carbon nanotube wires spaced apart from each other. A distance between adjacent carbon nanotube wires is greater than or equal to a diameter of the neural cell body.

Abstract: Provided are graphene nanoribbons (GNRs), methods of making GNRs, and uses of the GNRs. The methods can provide control over GNR parameters such as, for example, length, width, and edge composition (e.g., edge functional groups). The methods are based on a metal catalyzed cycloaddition reaction at the carbon-carbon triple bonds of a poly(phenylene ethynylene) polymer. The GNRs can be used in devices such a microelectronic devices.

Abstract: A method for making a carbon nanotube film includes the steps of: (a) adding a plurality of carbon nanotubes to a solvent to create a carbon nanotube floccule structure in the solvent; (b) separating the carbon nanotube floccule structure from the solvent; and (c) shaping the separated carbon nanotube floccule structure to obtain the carbon nanotube film.

Abstract: A method for producing a carbon nanotube-containing conductor having a conductive layer on the surface of an objective substrate, the method including: pressing a carbon nanotube network layer, via a release substrate having the carbon nanotube network layer thereon, against a transparent objective substrate coated with an electron beam-curable liquid resin composition to infiltrate the liquid resin composition into the carbon nanotube network layer; irradiating it with electron beams to cure the liquid resin composition; and peeling away the release substrate to obtain an objective substrate having a resin composition layer with carbon nanotubes embedded in the surface thereof.

Abstract: A fin structure including a vertical alternating stack of a first isoelectric point material layer having a first isoelectric point and a second isoelectric material layer having a second isoelectric point less than the first isoelectric point is formed. The first and second isoelectric point material layers become oppositely charged in a solution with a pH between the first and second isoelectric points. Negative electrical charges are imparted onto carbon nanotubes by an anionic surfactant to the solution. The electrostatic attraction causes the carbon nanotubes to be selectively attached to the surfaces of the first isoelectric point material layer. Carbon nanotubes are attached to the first isoelectric point material layer in self-alignment along horizontal lengthwise directions of the fin structure. A transistor can be formed, which employs a plurality of vertically aligned horizontal carbon nanotubes as the channel.

Abstract: A subject of the present invention is a process for producing carbon nanotubes, the process comprising: a) the synthesis of alcohol(s) by fermentation of at least one vegetable matter and optionally the purification of the product obtained; b) the dehydration of the alcohol or alcohols obtained in a) in order to produce, in a first reactor, a mixture of alkene(s) and water and optionally the purification of the product obtained; c) the introduction, in particular the introduction into a fluidized bed, in a second reactor, of a powdery catalyst at a temperature ranging from 450 to 850° C.

Abstract: Carbon nanotube needles and needle arrays are described in which the precursor pillars are etched by oxygen plasma treatment to provide tapered and/or sharp-tip needles. Processes, products by process, and devices incorporating the sharp-tip needles are further described.

Abstract: A method of cutting, thinning, welding and chemically functionalizing multiwalled carbon nanotubes (CNTs) with carboxyl and allyl moieties, and altering the electrical properties of the CNT films by applying high current densities combined with air-exposure is developed and demonstrated. Such welded high-conductance CNT networks of functionalized CNTs could be useful for device and sensor applications, and may serve as high mechanical toughness mat fillers that are amenable to integration with nanocomposite matrices.

Abstract: An atmosphere of a carbon source comprising an oxygenic compound is brought into contact with a catalyst with heating to yield single-walled carbon nanotubes. The carbon source comprising an oxygenic compound preferably is an alcohol and/or ether. The catalyst preferably is a metal. The heating temperature is preferably 500 to 1,500° C. The single-walled carbon nanotubes thus obtained contain no foreign substances and have satisfactory quality with few defects.

Abstract: Porous wall hollow glass microspheres are provided as a template for formation of nanostructures such as carbon nanotubes, In addition, the carbon nanotubes in combination with the porous wall hollow glass microsphere provides an additional reaction template with respect to carbon nanotubes.

Abstract: A method of making carbon nanotube contact structures on an electronic device includes growing a plurality of carbon nanotube columns on a mandrel. Electrically-conductive adhesive is applied to ends of the columns distal from the mandrel, and the columns are transferred to the electronic device. An electrically-conductive material is deposited onto some or all of the columns. The mandrel can be reused to grow a second plurality of carbon nanotube columns.

Abstract: A method of synthesizing carbon nanotubes. In one embodiment, the method includes the steps of: (a) dissolving a first amount of a first transition-metal salt and a second amount of a second transition-metal salt in water to form a solution; (b) adding a third amount of tannin to the solution to form a mixture; (c) heating the mixture to a first temperature for a first duration of time to form a sample; and (d) subjecting the sample to a microwave radiation for a second duration of time effective to produce a plurality of carbon nanotubes.

Abstract: The present invention relates to a method of forming single-walled carbon nanotubes. The method comprises contacting a gaseous carbon source with mesoporous TUD-1 silicate at suitable conditions. The mesoporous TUD-1 silicate comprises a metal of groups 3-13 of the Periodic Table of the Elements.

Abstract: An on-chip decoupling capacitor is disclosed. One or more carbon nanotubes are coupled to a first electrode of the capacitor. A dielectric skin is formed on the one or more carbon nanotubes. A metal coating is formed on the dielectric skin. The dielectric skin is configured to electrically isolate the one or more carbon nanotubes from the metal coating.

Abstract: A system for synthesizing carbon nanotubes (CNT) on a fiber material includes a surface treatment system adapted to modify the surface of the fiber material to receive a barrier coating upon which carbon nanotubes are to be grown, a barrier coating application system downstream of the surface treatment system adapted to apply the barrier coating to the treated fiber material surface, and a barrier coating curing system downstream of the barrier coating application systems for partially curing the applied barrier coating to enhance reception of CNT growth catalyst nanoparticles.

Abstract: Methods for making non-volatile switches include depositing gate material in a recess of a substrate; depositing drain metal in a recess of the gate material; planarizing the gate material, drain metal, and substrate; forming sidewalls by depositing material on the substrate around the gate material; forming a flexible conductive element between the sidewalls to establish a gap between the flexible conductive element and the gate material, such that the gap separating the flexible conductive element and the gate material is sized to create a negative threshold voltage at the gate material for opening a circuit; and forming a source terminal in electrical contact with the flexible conductive element.

Abstract: Three-dimensional integrated circuits and method for fabricating the same include forming one or more passive components in a passive-layer dielectric; depositing additional dielectric material on the passive-layer dielectric; forming a gate structure in the additional dielectric material; forming a gate dielectric layer on the gate structure and the additional dielectric material; forming a thin channel material on the gate dielectric; forming source and drain regions in electrical contact with the thin channel material to form a transistor; and passivating the transistor and providing electrical access to the source and drain regions.

Abstract: A unitary graphene matrix composite comprising: (a) a unitary graphene matrix containing an oxygen content of 0.001% to 10% by weight, obtained from heat-treating a graphene oxide gel at a temperature higher than 100° C. and contains no discrete graphene platelets derived from the graphene oxide gel; (b) a carbon or graphite filler phase selected from carbon or graphite fiber, carbon or graphite nano-fiber, carbon nano-tube, carbon nano-rod, meso-phase carbon particle, meso-carbon micro-bead, exfoliated graphite flake with a thickness greater than 100 nm, exfoliated graphite or graphite worm, coke particle, needle coke, carbon black or acetylene black particle, activated carbon particle, or a combination thereof. The carbon or graphite filler phase is preferably in a particulate, filamentary, or rod-like form dispersed in and bonded by the unitary graphene matrix.

Abstract: An on-chip decoupling capacitor is disclosed. One or more carbon nanotubes are coupled to a first electrode of the capacitor. A dielectric skin is formed on the one or more carbon nanotubes. A metal coating is formed on the dielectric skin. The dielectric skin is configured to electrically isolate the one or more carbon nanotubes from the metal coating.

Abstract: Two methods of producing nano-pads of catalytic metal for growth of single walled carbon nanotubes (SWCNT) are disclosed. Both methods utilize a shadow mask technique, wherein the nano-pads are deposited from the catalytic metal source positioned under the angle toward the vertical walls of the opening, so that these walls serve as a shadow mask. In the first case, the vertical walls of the photo-resist around the opening are used as a shadow mask, while in the second case the opening is made in a thin layer of the dielectric layer serving as a shadow mask. Both methods produce the nano-pad areas sufficiently small for the growth of the SWCNT from the catalytic metal balls created after high temperature melting of the nano-pads.

Abstract: A method of fabricating a semiconducting device is disclosed. A carbon nanotube is formed on a substrate. A portion of the substrate is removed to form a recess below a section of the carbon nanotube. A doped material is applied in the recess to fabricate the semiconducting device. The recess may be between one or more contacts formed on the substrate separated by a gap.

Abstract: Provided are a method of controlling an amount of adsorbed carbon nanotubes (CNTs) and a method of fabricating a CNT device. The method of controlling an amount of adsorbed CNTs includes adsorbing CNT particles onto a semiconductor structure, and removing some of the adsorbed CNTs by performing an oxygen plasma treatment on the adsorbed CNT particles.

Abstract: According to one embodiment, a memory device includes a nanomaterial assembly layer, a first electrode layer and a second electrode layer. The nanomaterial assembly layer is formed of an assembly of a plurality of micro conductors via gaps between the micro conductors. The first electrode layer is provided on the nanomaterial assembly layer. The second electrode layer is provided on the first electrode layer.

Abstract: An approach is provided for a structure and a method for a graphene-based apparatus. The method comprises acts of forming a graphene layer on a metal layer; forming a protective layer on the graphene layer that makes the graphene layer disposed between the metal layer and the protective layer; transferring the protective layer with the graphene layer and the metal layer onto a substrate; removing the metal layer off from the graphene layer; and forming a conducting layer on the graphene layer. Accordingly, the proposed structure of the graphene-based apparatus is able to prevent graphene damage during the transferring, and because of he use of the protective layer in the structure, the roller can be used to apply the stress which enables roll-to-roll type process and significantly improves the manufacturing throughput.

Abstract: A unitary graphene layer or graphene single crystal containing closely packed and chemically bonded parallel graphene planes having an inter-graphene plane spacing of 0.335 to 0.40 nm and an oxygen content of 0.01% to 10% by weight, which unitary graphene layer or graphene single crystal is obtained from heat-treating a graphene oxide gel at a temperature higher than 100° C., wherein the average mis-orientation angle between two graphene planes is less than 10 degrees, more typically less than 5 degrees. The molecules in the graphene oxide gel, upon drying and heat-treating, are chemically interconnected and integrated into a unitary graphene entity containing no discrete graphite flake or graphene platelet. This graphene monolith exhibits a combination of exceptional thermal conductivity, electrical conductivity, mechanical strength, surface smoothness, surface hardness, and scratch resistance unmatched by any thin-film material of comparable thickness range.

Abstract: An anode of a lithium battery includes a supporting member and a carbon nanotube film disposed on a surface of the support member. The carbon nanotube film includes at least two overlapped and intercrossed layers of carbon nanotubes. Each layer includes a plurality of successive carbon nanotube bundles aligned in the same direction. A method for fabricating the anode of the lithium battery includes the steps of: (a) providing an array of carbon nanotubes; (b) pulling out, by using a tool, at least two carbon nanotube films from the array of carbon nanotubes; and (c) providing a supporting member and disposing the carbon nanotube films to the supporting member along different directions and overlapping with each other to achieving the anode of lithium battery.

Abstract: A carbon nanotube forming method including providing a target substrate to be processed, a catalytic metal layer being formed on a surface of the target substrate; producing catalytic fine metal particles whose surfaces are oxidized by action of an oxygen plasma on the catalytic metal layer at a temperature T1; and activating the oxidized surfaces of the catalytic fine metal particles by reducing the oxidized surfaces of the catalytic fine metal particles by action of a hydrogen plasma on the catalytic fine metal particles at a temperature T2 higher than the temperature T1. The method further includes growing a carbon nanotube on the activated catalytic fine metal particles by thermal CVD at a temperature T3.

Abstract: A light emitting diode chip includes a sapphire substrate and a plurality of carbon nano-tubes arranged on an upper surface of the sapphire substrate. Gaps are formed between two adjacent carbon nano-tubes to expose parts of the upper surface of the sapphire substrate. An un-doped GaN layer is formed on the exposed parts of the upper surface of the sapphire substrate and covers the carbon nano-tubes. An n-type GaN layer, an active layer and a p-type GaN layer are formed on the un-doped GaN layer in sequence. A method for manufacturing the light emitting diode chip is also provided.

Abstract: Methods for selectively depositing nanostructures on a support layer include contacting the support layer with functionalized catalyst particles. The functionalized catalyst particles can form a self-assembled monolayer of catalyst particles on the support layer and the functionalized catalyst particles can be used to catalyze nanostructure growth. In one embodiment of the disclosed method, zinc oxide nanowires are grown on a patterned substrate using functionalized gold nanoparticles. Patterned arrays of self-assembled nanostructures and nanoscale devices using such nanostructure arrays are also described.

Abstract: This disclosure provides systems, methods, and apparatus for flexible thin-film transistors. In one aspect, a device includes a polymer substrate, a gate electrode disposed on the polymer substrate, a dielectric layer disposed on the gate electrode and on exposed portions of the polymer substrate, a carbon nanotube network disposed on the dielectric layer, and a source electrode and a drain electrode disposed on the carbon nanotube network.

Abstract: Improved methods of fullerene derivative production including use of less solvent, or elimination of solvent, as well as use of shorter reaction times and higher reaction temperatures. Methods useful for production of bis-, tris-, tetra-, penta-, and hexa-fullerene derivatives. Indene is a preferred derivative. The derivatives used in active layers for solar cell applications.

Abstract: Methods for producing macroscopic quantities of oxidized graphene nanoribbons are disclosed herein. The methods include providing a plurality of carbon nanotubes and reacting the plurality of carbon nanotubes with at least one oxidant to form oxidized graphene nanoribbons. The at least one oxidant is operable to longitudinally open the carbon nanotubes. In some embodiments, the reacting step takes place in the presence of at least one acid. In some embodiments, the reacting step takes place in the presence of at least one protective agent. Various embodiments of the present disclosure also include methods for producing reduced graphene nanoribbons by reacting oxidized graphene nanoribbons with at least one reducing agent. Oxidized graphene nanoribbons, reduced graphene nanoribbons and compositions and articles derived therefrom are also disclosed herein.

Abstract: Provided is a method for preparing a carbon material based on an organic nanofilm using thermal evaporation, including: depositing a liquid polymer or polymer solution containing a polymer and a solvent onto a substrate, thereby forming an organic nanofilm; stabilizing the organic nanofilm so that the carbon atoms in the organic nanofilm have a cyclic arrangement; and carbonizing the stabilized organic nanofilm, thereby forming a carbon material, wherein the organic nanofilm is formed from the liquid polymer or polymer solution through a thermal evaporation process. The method provides a carbon material with a thickness, sheet resistance and surface roughness suitable for various applications and allows control thereof. In addition, the method uses a relatively inexpensive starting material, pitch, thereby reducing the overall production cost, and avoids a need for a complicated additional patterning operation, so that the carbon material is applied directly to electronic devices.

Abstract: Electromagnetic irradiation of functionalized fullerenes in an oxygen-free environment induces conversion of the functionalized fullerenes to carbon nanotubes, carbon nanohorns, carbon onions, diamonds and/or carbon schwarzites. The carbon nanotubes can be multi-wall carbon nanotubes. Advantageously, the subject invention can be used for in-situ synthesis of carbon nanostructures within a matrix to form a carbon nanostructure composite, where positioning of the carbon nanostructures is controlled by the manner of dispersion of the functionalized fullerenes in the matrix. Carbon nanotube comprising features, such as electrical connects, can be formed on a surface by irradiating a portion of a functionalized fullerene coating with a laser beam.

Abstract: A gas sensor operable at ambient conditions, the sensor includes functionalized feather-like tellurium (Te) nanostructures on single-walled carbon nanotube (SWNTs) networks.

Abstract: A method for controlled deposition and orientation of molecular sized nanoelectromechanical systems (NEMS) on substrates is disclosed. The method comprised: forming a thin layer of polymer coating on a substrate; exposing a selected portion of the thin layer of polymer to alter a selected portion of the thin layer of polymer; forming a suspension of nanostructures in a solvent, wherein the solvent suspends the nanostructures and activates the nanostructures in the solvent for deposition; and flowing a suspension of nanostructures across the layer of polymer in a flow direction; thereby: depositing a nanostructure in the suspension of nanostructures only to the selected portion of the thin layer of polymer coating on the substrate to form a deposited nanostructure oriented in the flow direction. By selectively employing portions of the method above, complex NEMS may be built of simpler NEMSs components.