Atomic Force Probe Patents (Class 977/863)
  • Patent number: 8726411
    Abstract: A charged probe and an electric field measuring method are provided. The probe can be charged with single electricity on single nano particle attached on the top of the probe tip being a charged probe and the probe is applicable for measuring the electric fields of object in the nano scale. The probe comprises an insulating tip base, a cantilever and a single nano-particle. The cantilever is arranged for supporting the insulating tip base and the single nano-particle is configured on the erosion plane. After conducting contact electrification method to charge the electric nano particle, the single nano-particle will be charged with fixed number of single electrical charge. Then, the amount of the fixed number of single electrical charge is calculated by the virtual image charge calculation method. The charged probe can be used to measure the electric fields distribution by tapping mode or f-d curve measurement.
    Type: Grant
    Filed: June 18, 2013
    Date of Patent: May 13, 2014
    Assignee: National Tsing Hua University
    Inventors: Fan-Gang Tseng, Joe-Ming Chang
  • Patent number: 8689361
    Abstract: A probe for atomic force microscopy may be provided by depositing a thin film onto a wafer substrate and etching the substrate to leave the thin film behind in the form of a handle, a cantilever, and a probe tip in the cantilever. In some embodiments, a thin film substrate for the probe may be accomplished by forming the probe mold on a first wafer, bonding a second wafer onto the first wafer, and patterning out the second wafer to define the substrate for the probe on the first wafer. The thin film may be deposited onto the exposed portions of the first wafer. Thereafter, portions of the first and second wafers may be removed to leave behind the probe.
    Type: Grant
    Filed: February 5, 2013
    Date of Patent: April 1, 2014
    Assignee: Oicmicro, LLC
    Inventor: Salleh Ismail
  • Patent number: 8677931
    Abstract: A pattern having exceptionally small features is printed on a partially fabricated integrated circuit during integrated circuit fabrication. The pattern is printed using an array of probes, each probe having: 1) a photocatalytic nanodot at its tip; and 2) an individually controlled light source. The surface of the partially fabricated integrated circuit comprises a photochemically active species. The active species undergoes a chemical change when contacted by the nanodot, when the nanodot is illuminated by light. To print a pattern, each probe raster-scans its associated nanodot across the surface of the partially fabricated integrated circuit. When the nanodot reaches a desired location, the nanodot is illuminated by the light source, catalyzing a change in the reactive species and, thus, printing at that location. Subsequently, reacted or unreacted species are selectively removed, thereby forming a mask pattern over the partially fabricated integrated circuit.
    Type: Grant
    Filed: August 28, 2009
    Date of Patent: March 25, 2014
    Assignee: Micron Technology, Inc.
    Inventor: Gurtej S. Sandhu
  • Patent number: 8673621
    Abstract: The present patent application describes a cantilever for atomic force microscopy (AFM), which includes a cantilever body having a fixed end and a free end, the free end having a surface region being chemically modified by a dendron in which a plurality of termini of the branched region of the dendron are bound to the surface, and a terminus of the linear region of the dendron is functionalized.
    Type: Grant
    Filed: February 12, 2007
    Date of Patent: March 18, 2014
    Assignees: POSTECH Foundation, POSCO
    Inventors: Joon Won Park, Yu Jin Jung, Bong Jin Hong, Saul Tendler, Stephanie Allen
  • Patent number: 8296860
    Abstract: An atomic force microscopy (AFM) method includes a scanning probe that scans a surface of a structure to produce a first structure image. The structure is then rotated by 90° with respect to the scanning probe. The scanning probe scans the surface of the structure again to produce a second structure image. The first and second structure images are combined to produce best fit image of the surface area of the structure. The same method is used to produce the best fit image of a flat standard. The best fit image of the flat standard is subtracted from the best fit image of the structure to obtain a true topographical image in which Z direction run out error is substantially reduced or eliminated.
    Type: Grant
    Filed: March 16, 2009
    Date of Patent: October 23, 2012
    Assignee: Seagate Technology LLC
    Inventors: Huiwen Liu, Lin Zhou, Dale Egbert, Jonathan Arland Nelson, Peter Gunderson
  • Patent number: 8269485
    Abstract: Techniques for coupling with devices that convert displacements into differential voltages and improve the sensitivity of such devices. The disclosed system improves the accuracy and resolution of a transducers such as an LVDT by converting certain parts of the circuit to a digital circuit. One embodiment uses a processor, although other digital processing circuitry may also be used.
    Type: Grant
    Filed: May 27, 2003
    Date of Patent: September 18, 2012
    Assignee: Asylum Research Corporation
    Inventors: Dan Bocek, Roger Proksch
  • Patent number: 8163345
    Abstract: The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN and kits for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.
    Type: Grant
    Filed: July 31, 2009
    Date of Patent: April 24, 2012
    Assignee: Northwestern University
    Inventors: Chad A. Mirkin, Richard Piner, Seunghun Hong
  • Patent number: 8156568
    Abstract: This invention addresses a contact mode hybrid scanning system (HSS), which can be used for measuring topography. The system consists of a cantilever or a cantilever array, a scanning stage, a light source, and instrumentation to synchronize and control the individual components. Detection of the cantilever's movement is achieved by directly measuring the change in disposition of the cantilever including its height, rotation at one or more points on the cantilever thereby providing a partial three-dimensional reconstruction without the need for actuating the cantilever. This is achieved by employing a displacement meter such as a triangulation meter or a confocal meter.
    Type: Grant
    Filed: April 16, 2008
    Date of Patent: April 10, 2012
    Assignee: Picocal, Inc.
    Inventors: Angelo Gaitas, Yogesh B. Gianchandani
  • Patent number: 7975316
    Abstract: A frequency shift ?f obtained by an FM-AFM can be expressed by a simple linear coupling of a ?fLR derived from a long-range interaction force and a ?fSR derived from a short-range interaction force. Given this factor, a ?f curve on an atomic defect and a ?f curve on a target atom on the sample surface are each measured for only a relatively short range scale (S1 and S2), and a difference ?f curve of those two curves is obtained (S3). Since the difference ?f curve is derived only from a short-range interaction force, a known conversion operation is applied to this curve obtain an F curve which illustrates the relationship between the force and the distance Z, and then the short-range interaction force on the target atom is obtained from the F curve (S4). Since the range scale in measuring the ?f curve can be narrowed, the measurement time can be shortened, and since the conversion from the ?f curve into F curve is required only once, the computational time can also be shortened.
    Type: Grant
    Filed: January 7, 2008
    Date of Patent: July 5, 2011
    Assignees: Osaka University, Shimadzu Corporation
    Inventors: Masahiro Ota, Noriaki Oyabu, Masayuki Abe, Oscar Custance, Yoshiaki Sugimoto, Seizo Morita
  • Patent number: 7904966
    Abstract: There is provided a scanning probe microscope apparatus which has a high sensitivity for the interaction between the cantilever and the sample and comprises a cantilever that can oscillate stably in dynamic mode even when a mechanical Q value is low. A driving signal having a frequency close to the resonant frequency of the cantilever (4) is supplied from the signal generator (9) to the oscillation exciting means (10) to separately (forcibly) oscillate the cantilever (4). And the frequency of the driving signal or the resonant frequency of the cantilever is controlled (by adjusting the distance between the cantilever (4) and the sample (1)), such that the phase difference between the oscillation of the cantilever (4) detected by the oscillation detecting means (5) and the driving signal becomes zero, i.e. the frequency of the driving signal and the resonant frequency of the cantilever (4) match.
    Type: Grant
    Filed: July 19, 2007
    Date of Patent: March 8, 2011
    Assignee: Japan Science and Technology Agency
    Inventors: Dai Kobayashi, Shuhei Nishida, Hideki Kawakatsu
  • Patent number: 7887885
    Abstract: The invention provides methods of nanolithography and products therefor and produced thereby. In particular, the invention provides a nanolithographic method referred to as high force nanografting (HFN). HFN utilizes a tip (e.g., a scanning probe microscope (SPM) tip such as an atomic force microscope (AFM) tip) to pattern a substrate passivated with a resist. In the presence of a patterning compound, the tip is used to apply a high force to the substrate to remove molecules of the resist from the substrate, whereupon molecules of the patterning compound are able to attach to the substrate the form the desired pattern.
    Type: Grant
    Filed: October 19, 2001
    Date of Patent: February 15, 2011
    Assignee: Northwestern University
    Inventors: Chad A. Mirkin, Peter V. Schwartz, James J. Storhoff, So-Jung Park
  • Patent number: 7886366
    Abstract: The amplitude control of a cantilever based on the van der Pol model is performed through feedback using measurement data on a deflection of the cantilever. A self-oscillating circuit integrates a deflection angle signal of a cantilever detected by a deflection angle measuring mechanism using an integrator, multiplies a resulting integral value by linear feedback gain generated by a gain generator, and an output corresponding to the linear feedback signal is generated. Also, the self-oscillating circuit cubes the deflection angle signal using analog multipliers, integrates the resulting values using integrators, multiplies the resulting integral values by a nonlinear feedback gain generated by a gain generator, and an output corresponding to the nonlinear feedback signal is generated. Furthermore, the self-oscillating circuit adds the outputs together using an adder, and a voltage signal for a piezo element is generated.
    Type: Grant
    Filed: November 20, 2008
    Date of Patent: February 8, 2011
    Assignees: National Institute of Advanced Industrial Science and Technology, University of Tsukuba
    Inventors: Masaharu Kuroda, Kentaro Nishimura, Takashi Someya, Hiroshi Yabuno
  • Patent number: 7861315
    Abstract: A simple method for integrating a circuit onto a probe with a handle, a cantilever and a tip is provided. By fabricating a probe whose surface has recessed patterns of the desirable profile, a circuit can be formed on one part of the handle out over the cantilever and back onto a different part of the handle without employing a circuit lithography step. The circuit material constituting the circuit is deposited orthogonally to the probe surface with a line-of-sight technique.
    Type: Grant
    Filed: December 11, 2008
    Date of Patent: December 28, 2010
    Assignee: Asylum Research Corporation
    Inventors: Roger Proksch, Hector Cavazos
  • Patent number: 7744963
    Abstract: In one aspect, a method of nanolithography is provided, the method comprising providing a substrate; providing a scanning probe microscope tip; coating the tip with a deposition compound; and subjecting said coated tip to a driving force to deliver said deposition compound to said substrate so as to produce a desired pattern. Another aspect of the invention provides a tip for use in nanolithography having an internal cavity and an aperture restricting movement of a deposition compound from the tip to the substrate. The rate and extent of movement of the deposition compound through the aperture is controlled by a driving force.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: June 29, 2010
    Assignee: Northwestern University
    Inventors: Chad A. Mirkin, Seunghun Hong, Vinayak P. Dravid
  • Patent number: 7735358
    Abstract: The present invention provides a self-sensing tweezer device for micro and nano-scale manipulation, assembly, and surface modification, including: one or more elongated beams disposed in a first configuration; one or more oscillators coupled to the one or more elongated beams, wherein the one or more oscillators are operable for selectively oscillating the one or more elongated beams to form one or more “virtual” probe tips; and an actuator coupled to the one or more elongated beams, wherein the actuator is operable for selectively actuating the one or more elongated beams from the first configuration to a second configuration.
    Type: Grant
    Filed: June 15, 2007
    Date of Patent: June 15, 2010
    Assignee: Insitutec, Inc.
    Inventors: Marcin B. Bauza, Shane C. Woody, Stuart T. Smith
  • Patent number: 7705617
    Abstract: Nanoscale impedance microscopy and related methods, circuit and/or apparatus capable of quantitatively measuring magnitude and phase of alternating current flow.
    Type: Grant
    Filed: July 21, 2006
    Date of Patent: April 27, 2010
    Assignee: Northwestern University
    Inventors: Mark C. Hersam, Liam S. C. Pingree
  • Patent number: 7691541
    Abstract: Photomask repair and fabrication with use of direct-write nanolithography, including use of scanning probe microscopic tips (e.g., atomic force microscope tips, etc.) for deposition of ink materials including sol-gel inks. Additive methods can be combined with subtractive methods. Holes can be filled with nanostructures. Heights of the nanostructures filling the holes can be controlled without losing control of the lateral dimensions of the nanostructures. Phase shifters on phase shifting masks (PSMs) are additively repaired with selectively deposited sol-gel material that is converted to solid oxide, which has optical transparency and index of refraction adapted for the phase shifters repaired.
    Type: Grant
    Filed: October 21, 2003
    Date of Patent: April 6, 2010
    Assignee: NanoInk, Inc.
    Inventors: Percy Van Crocker, Sylvain Cruchon-Dupeyrat, Linette Demers, Robert Elghanian, Sandeep Disawal, Nabil Amro, Hua Zhang
  • Patent number: 7637960
    Abstract: Thin and short cantilevers possess both a low force constant and a high resonance frequency, thus are highly desirable for atomic force microscope (AFM) imaging and force measurement. According to some embodiments, the invention provides small silicon (Si) cantilevers integrated with a Si tip, for example fabricated from SOI wafers that are used for reducing the variation of thickness of the cantilevers. In one example, the fabrication process provided SOI chips containing 40 silicon cantilevers integrating with an ultra-sharp Si tip. The resolution of images obtained with these tips was much higher than those obtained with the commercial tips, while the force constants were much less, that is, more suitable for imaging soft samples.
    Type: Grant
    Filed: November 15, 2006
    Date of Patent: December 29, 2009
    Assignee: University of Houston
    Inventors: Chengzhi Cai, Chi-Ming Yam, Guoting Qin, Steven Pei, Qingkai Yu
  • Patent number: 7569252
    Abstract: The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN and kits for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip.
    Type: Grant
    Filed: June 2, 2003
    Date of Patent: August 4, 2009
    Assignee: Northwestern University
    Inventors: Chad A. Mirkin, Richard Piner, Seunghun Hong
  • Patent number: 7543482
    Abstract: A carbon thin line probe having a carbon thin line selectively formed at a projection-like terminal end portion thereof by means of an irradiation of high-energy beam, the carbon thin line internally containing a metal. Thereby achieved is a carbon thin line probe suitable for example for the probe of SPM cantilever, which has a high aspect ratio and high durability and reliability, capability of batch processing based on a simple manufacturing method, and to which magnetic characteristic can be imparted.
    Type: Grant
    Filed: February 27, 2007
    Date of Patent: June 9, 2009
    Assignee: Olympus Corporation
    Inventors: Masashi Kitazawa, Masaki Tanemura, Junya Tanaka, Tatsuhiko Okita
  • Patent number: 7491422
    Abstract: A novel method of transporting ink to a substrate with dip-pen nanolithographic (DPN) stamp tips coated with polymer (e.g., polydimethylsiloxane (PDMS), etc.). This kind of tip adsorbs chemicals (“inks”) easily and is used to generate DPN nanopatterns that are imaged with the same tip after a DPN process. This method builds a bridge between micro-contact printing (?CP) and DPN, making it possible for one to easily generate smaller structures of any molecules that have been patterned by the ?CP technique. The easy tip-coating and writing process enriches the state-of-the-art DPN technique. The sub-100 nm DPN resolution obtained by using this kind of novel tip is comparable to that with a conventional Si3N4 probe tip. Importantly, the unique stamp tip was able to transfer solvent (e.g., liquid “ink”) onto a substrate, resulting in fabrication of hollow nanostructures with only one DPN holding/writing step.
    Type: Grant
    Filed: February 14, 2005
    Date of Patent: February 17, 2009
    Assignee: Nanoink, Inc.
    Inventors: Hua Zhang, Robert Elghanian, Linette Demers, Nabil Amro, Sandeep Disawal, Sylvain Cruchon-Dupeyrat
  • Patent number: 7478552
    Abstract: A method of operating a probe based instrument includes a light source that generates and directs a beam of light towards a probe of the instrument to detect a property of probe deflection. The method automatically adjusts the position of the light beam on the probe based on movement of the probe by a Z actuator so as to eliminate apparent parasitic deflection of the probe. A light source assembly for detecting deflection of a probe preferably includes a base, a tip/tilt stage mounted on the base and a light source supported by the tip/tilt stage. The tip/tilt stage includes at least one electrically actuated fine adjustment actuator that controls the tip/tilt stage, preferably independently of movement of the AFM scanner used to move the probe.
    Type: Grant
    Filed: March 21, 2006
    Date of Patent: January 20, 2009
    Assignee: Veeco Instruments Inc.
    Inventors: Doug Gotthard, Ben Ohler
  • Patent number: 7442922
    Abstract: The invention relates to a combined method in which a high-resolution image of a sample surface is recorded by means of scanning force microscopy and the locally high-resolution, chemical nature (which is correlated with this) of the sample surface is measured by means of mass spectroscopy. The surface is chemically analyzed on the basis of laser desorption of a restricted surface area. For this purpose, the surface is illuminated in a pulsed form at each point of interest using the optical near-field principle. The optical near-field principle guarantees analysis with a position resolution which is not diffraction-limited. A hollow tip of the measurement probe that is used allows unambiguous association between the chemical analysis and a selected surface area. The highly symmetrical arrangement allows good transmission of the molecular ions that are produced.
    Type: Grant
    Filed: July 24, 2003
    Date of Patent: October 28, 2008
    Assignee: JPK Instruments AG
    Inventors: Detlef Knebel, Matthias Amrein, Klaus Dreisewerd
  • Patent number: 7430898
    Abstract: A system that includes an optical subsystem and an atomic force microscope probe is provided. The optical subsystem is configured to generate positional information about a location on a surface of the specimen. The system is configured to position the probe proximate the location based on the positional information. One method includes generating positional information about a location on a surface of a specimen with an optical subsystem. The method also includes positioning an atomic force microscopy probe proximate the location based on the positional information. Another system includes an optical subsystem configured to measure overlay of a wafer using scatterometry. The system also includes an atomic force microscope configured to measure a characteristic of a feature on the wafer. An additional method includes measuring overlay of a wafer using scatterometry. The method also includes measuring a characteristic of a feature on the wafer using atomic force microscopy.
    Type: Grant
    Filed: September 3, 2004
    Date of Patent: October 7, 2008
    Assignee: KLA-Tencor Technologies Corp.
    Inventors: Michael Weber-Grabau, Christopher F. Bevis, Michael Faeyrman, Ofir Zamir
  • Patent number: 7420106
    Abstract: Characterizing dielectric surfaces by detecting electron tunneling. An apparatus includes an atomic force probe. A mechanical actuator is connected to the atomic force probe. A mechanical modulator is connected to the mechanical actuator. The mechanical modulator modulates the mechanical actuator and the atomic force probe at the resonant frequency of the atomic force probe. An electrical modulator is connected to the atomic force probe. A feedback sensing circuit is connected to the mechanical modulator to detect movement of the atomic force probe and provide information about the movement of the atomic force probe to the mechanical modulator allowing the mechanical modulator to modulate the atomic force probe at the resonant frequency of the atomic force probe as the resonant frequency of the atomic force probe changes. An FM detector is connected to the feedback circuit detects changes in the resonant frequency of the atomic force probe.
    Type: Grant
    Filed: March 15, 2006
    Date of Patent: September 2, 2008
    Assignee: The University of Utah Research Foundation
    Inventors: Clayton C. Williams, Ezra B. Bussmann
  • Patent number: 7402736
    Abstract: A probe of a scanning probe microscope having a sharp tip and an increased electric characteristic by fabricating a planar type of field effect transistor and manufacturing a conductive carbon nanotube on the planar type field effect transistor. To achieve this, the present invention provides a method for fabricating a probe having a field effect transistor channel structure including fabricating a field effect transistor, making preparations for growing a carbon nanotube at a top portion of a gate electrode of the field effect transistor, and generating the carbon nanotube at the top portion of the gate electrode of the field effect transistor.
    Type: Grant
    Filed: December 23, 2005
    Date of Patent: July 22, 2008
    Assignee: POSTECH Foundation
    Inventors: Wonkyu Moon, Geunbae Lim, Sang Hoon Lee
  • Patent number: 7095822
    Abstract: This invention pertains to an x-ray microprobe that can be placed very close the sample surface. A practical implementation is an x-ray target material integrated to an atomic force microscope (AFM) tip and an electron beam is focused to the target materials to generate x-ray emission. This microprobe can be combined with energy-resolved detector or a fluorescence imaging system for material analysis applications.
    Type: Grant
    Filed: July 28, 2005
    Date of Patent: August 22, 2006
    Assignee: Xradia, Inc.
    Inventor: Wenbing Yun
  • Patent number: 7073937
    Abstract: A heat emitting probe including a conductive nanotube probe needle with its base end fastened to a holder and its tip end protruded, a heat emitting body formed on the probe needle, a conductive nanotube lead wire fastened to the heat emitting body, and an electric current supply that causes an electric current to pass through the conductive nanotube lead wire and both ends of the probe needle. The tip end of the probe needle is thus heated by an electric current flowing through the heat emitting body. A heat emitting probe apparatus includes the above-described heat emitting probe, a scanning mechanism that allows the heat emitting probe to scan over a thermal recording medium, and a control circuit that causes the tip end of the probe needle to emit heat, thus recording extremely small hole patterns in the surface of a thermal recording medium.
    Type: Grant
    Filed: February 13, 2002
    Date of Patent: July 11, 2006
    Assignees: Yoshikaza Nakayama, Daiken Chemical Co., Ltd.
    Inventors: Yoshikazu Nakayama, Akio Harada