Abstract: Strain modulated nanostructures for optoelectronic devices and associated systems and methods are disclosed. A semiconductor laser in accordance with one embodiment of the disclosure, for example, comprises an active region having a nanowire structure formed from a semiconductor material. The nanowire structure of the semiconductor material has a bandgap that is indirect in a first strain state. The laser further includes a straining unit coupled to the active region. The straining unit is configured to modulate the nanowire structure such that the nanowire structure reaches a second strain state in which the bandgap becomes direct or substantially direct and, in operation, emits photons upon electron-hole recombination.

Abstract: A semiconductor laser device capable of easily obtaining a desired hue is obtained. This semiconductor laser device (100) includes a green semiconductor laser element (30) having one or a plurality of laser beam emitting portions, a blue semiconductor laser element (50) having one or a plurality of laser beam emitting portions, and a red semiconductor laser element (10) having one or a plurality of laser beam emitting portions.

Abstract: A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the active layer in which the density of photons is relatively low.

Abstract: A multi-band (multi-colour) multiwavelength mode locked laser diode is provided by dynamic phase compensation of a quantum dot active medium. The laser diode is provided with a PIN diode structure where the active medium consists of a plurality of layers of quantum dots such as those produced by self-assembly from known chemical beam epitaxy methods. The multiplicity of bands may be produced by AC Stark splitting, frequency selective attenuation, or by the inclusion of multiple different layers having different, respective, peak ASE emissions. Dispersion compensation within laser facets, waveguides, and the optically active media permit the selection of a fixed dispersion within the cavity. A dynamic group phase change induced by the AC Stark effect permits compensation of the fixed dispersion sufficiently to produce an intraband mode-locked laser. Even interband mode locking was observed.

Abstract: A method of forming an optically active region on a silicon substrate includes the steps of epitaxially growing a silicon buffer layer on the silicon substrate and epitaxially growing a SiGe cladding layer having a plurality of arrays of quantum dots disposed therein, the quantum dots being formed from a compound semiconductor material having a lattice mismatch with the silicon buffer layer. The optically active region may be incorporated into devices such as light emitting diodes, laser diodes, and photodetectors.

Abstract: The specification describes a method for selectively depositing carbon nanotubes on the end face of an optical fiber. The end face of the optical fiber is exposed to a dispersion of carbon nanotubes while light is propagated through the optical fiber. Carbon nanotubes deposit selectively on the light emitting core of the optical fiber.

Abstract: Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.

Abstract: A method of making a carbon nanotube structure includes forming a plurality of carbon nanotubes and contacting the carbon nanotubes with a polymer. A solid composition is formed from the carbon nanotubes and polymer and then shaped. For example, the solid composition can be shaped into an elongated structure such as a filament, wire, rope, cable, and the like. In at least some instances, at least some, or all, of the polymer is removed from the solid composition after it is shaped.

Abstract: A device comprising a single photon generator and a waveguide, wherein a single photon generated by the single photon generator is coupled to the waveguide.

Abstract: An optical device includes an input optical source that provides and optical signal to the optical device. A surface phonon polariton (SPP) nanostructure receives the optical signal that interacts with the SPP nanostructure to excite a Raman process and produce a Raman light signal. The Raman light signal comprises a broad spectral range from near infrared to far infrared.

Abstract: A quantum dot vertical capacity surface emitting laser (QD-VCSEL) and a method of manufacturing the same are provided. The QD-VCSEL includes a substrate, a lower distributed brag reflector (DBR) mirror formed on the substrate, an electron transport layer (ETL) formed on the lower DBR mirror, an emitting layer (EML) formed of nano-particle type group II-VI compound semiconductor quantum dots on the ETL, a hole transport layer (HTL) formed on the EML, and an upper DBR mirror formed on the HTL.

Abstract: Nanostructures configured to enhance the intensity of Raman scattered radiation scattered by an analyte include a substantially planar substrate, a plurality of nanoparticles disposed on a surface of the substrate, and a Raman-enhancing material disposed on at least a portion of at least one nanoparticle. Each nanoparticle is configured to emit lased radiation upon stimulation of the nanoparticle and may comprise a nanowire laser. Raman spectroscopy systems include a radiation source, a radiation detector configured to detect Raman scattered radiation scattered by an analyte, a nanostructure including at least one nanoparticle configured to emit lased radiation upon stimulation, and means for stimulating the nanoparticle.

Abstract: An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.

Abstract: A nano-colonnade VCSEL device and a method of fabrication utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a first layer to another horizontal surface of a second layer to connect the layers. The VCSEL device includes a first layer having the (111) horizontal surface; a second layer; and an insulator support between the first layer and the second layer that separates the first layer from the second layer. A portion of the second layer overhangs the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer. The VCSEL device further includes a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface, and distributed Bragg mirrors adjacent to opposite end of the nanowire column.

Abstract: This invention generally relates to nanotechnology and nanoelectronics as well as associated methods and devices. In particular, the invention relates to nanoscale optical components such as electroluminescence devices (e.g., LEDs), amplified stimulated emission devices (e.g., lasers), waveguides, and optical cavities (e.g., resonators). Articles and devices of a size greater than the nanoscale are also included. Such devices can be formed from nanoscale wires such as nanowires or nanotubes. In some cases, the nanoscale wire is a single crystal. In one embodiment, the nanoscale laser is constructed as a Fabry-Perot cavity, and is driven by electrical injection. Any electrical injection source may be used. For example, electrical injection may be accomplished through a crossed wire configuration, an electrode or distributed electrode configuration, or a core/shell configuration. The output wavelength can be controlled, for example, by varying the types of materials used to fabricate the device.

Abstract: Laser marking of plastic material is achieved by incorporating into the plastic a laser marking particulate additive having a particle size of less than 100 nm. A mixed oxide particle of tin and antimony having a particle size of 10–70 nm is useful as a laser marking additive when using a YAG laser. A metallic powder can further be added to improve marking contrast.