Compound Contains At Least One Atom Of Silicon Or Boron (9/02g) Patents (Class 987/32)
  • Patent number: 11605535
    Abstract: Described herein are boron-containing precursor compounds, and compositions and methods comprising same, for forming boron-containing films. In one aspect, the film is deposited from at least one precursor having the following Formula I or II described herein.
    Type: Grant
    Filed: July 31, 2020
    Date of Patent: March 14, 2023
    Assignee: Versum Materials US, LLC
    Inventors: Xinjian Lei, Moo-Sung Kim