Search Patents
  • Cryptosystem for optical storage
    Patent number: 6125183
    Abstract: A method of encrypting and decrypting digital data such as text, numeric, images, pictures, especially tailored for optical compact discs; said method comprising of ciphering/deciphering and error detection and correction using algebraic method, namely Reed-Solomon code.
    Type: Grant
    Filed: April 30, 1998
    Date of Patent: September 26, 2000
    Assignee: Obducat AB
    Inventors: Rizgar Nabi Jiawook, Babak Heidari, Lennart Olsson
  • High efficiency nanostructured photovoltaic device manufacturing
    Patent number: 9117954
    Abstract: Photovoltaic and Light emitted diode devices comprise of epitaxial wafer of plurality of layers has been proposed. Quantum Dots are deposited onto the micro-nanostructure layer from the light incident direction to increasing light transmission to the active layer. Quantum dots deposited between the light source and the active layer, on the micro-nanostructure layer, to improve light excitation, since it can absorb wavelengths, which are not absorbed by the active layer, and the size and composition of quantum dots can determine its bandgap. A micro-nanostructured layer at the bottom of the PV wafer, which is produced by Molecular Beam Epitaxy (MBE), increases the internal light reflections in the active layer, which increases the efficiency of light absorption and that leads to a photocurrent enhancement.
    Type: Grant
    Filed: March 9, 2011
    Date of Patent: August 25, 2015
    Assignee: European Nano Invest AB
    Inventor: Rizgar Jiawook
  • HIGH EFFICIENCY NANOSTRUCTURED PHOTVOLTAIC DEVICE MANUFACTURING
    Publication number: 20120291862
    Abstract: Photovoltaic and Light emitted diode devices comprise of epitaxial wafer of plurality of layers has been proposed. Quantum Dots are deposited onto the micro-nanostructure layer from the light incident direction to increasing light transmission to the active layer. Quantum dots deposited between the light source and the active layer, on the micro-nanostructure layer, to improve light excitation, since it can absorb wavelengths, which are not absorbed by the active layer, and the size and composition of quantum dots can determine its bandgap. A micro-nanostructured layer at the bottom of the PV wafer, which is produced by Molecular Beam Epitaxy (MBE), increases the internal light reflections in the active layer, which increases the efficiency of light absorption and that leads to a photocurrent enhancement.
    Type: Application
    Filed: March 9, 2011
    Publication date: November 22, 2012
    Applicant: EUROPEAN NANO INVEST AB
    Inventor: Rizgar Jiawook
Narrow Results

Filter by US Classification