Magnetoresistive Type Patents (Class 330/62)
  • Patent number: 9641128
    Abstract: An apparatus includes an input amplifier stage and a switch that has a first terminal at a virtual ground input of the input amplifier stage.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: May 2, 2017
    Assignee: Qualcomm Incorporated
    Inventors: Chien-Chung Yang, Vijayakumar Dhanasekaran
  • Patent number: 8933750
    Abstract: An apparatus includes a circuit and a field line. The circuit includes a magnetic tunnel junction including a storage layer and a sense layer. The field line is configured to generate a magnetic field based on an input signal, where the magnetic tunnel junction is configured such that a magnetization direction of the sense layer and a resistance of the magnetic tunnel junction vary based on the magnetic field. The circuit is configured to amplify the input signal to generate an output signal that varies in response to the resistance of the magnetic tunnel junction.
    Type: Grant
    Filed: February 15, 2013
    Date of Patent: January 13, 2015
    Assignee: Crocus Technology Inc.
    Inventors: Bertrand F. Cambou, Douglas J. Lee, Ken Mackay
  • Patent number: 7414804
    Abstract: An amplifier system with feedback current cancellation comprises an amplifier with an input, an output, and at least one stage. A feedback network communicates with the input and output of the amplifier. A feedback current cancellation module that provides a first current at the input of the amplifier that substantially cancels a second current provided at the input of the amplifier by the feedback network.
    Type: Grant
    Filed: August 30, 2004
    Date of Patent: August 19, 2008
    Assignee: Marvell International Ltd.
    Inventor: Thart Fah Voo
  • Patent number: 6917088
    Abstract: A magneto-resistive device has a high reproducing output and is suitable for use as a CPP-GMR device. The magneto-resistive device has a first magnetic layer, a second magnetic layer, and a non-magnetic spacer formed between the first and second magnetic layers. The first magnetic layer contains a magnetic material whose conduction electrons belong to a first energy band, and the second magnetic layer contains a magnetic material whose conduction electrons belong to a second energy band. The first and second energy bands are attributable to orbitals of the same kind, thereby increasing the ratio of change in magnetoresistance and adjusting the electric resistance.
    Type: Grant
    Filed: December 31, 2002
    Date of Patent: July 12, 2005
    Assignee: Hitachi, Ltd.
    Inventors: Hiromasa Takahashi, Jun Hayakawa, Susumu Soeya, Kenchi Ito
  • Publication number: 20040233585
    Abstract: The layer system having an increased magnetoresistive effect contains at least one soft magnetic detection layer, a non-magnetic decoupling layer, which rests on the detection layer, and a layer partial system, which is located at a distance due to the decoupling layer, forms an artificial antiferromagnet, and which is decoupled from the detection layer. This partial system comprises a first ferromagnetic and a second ferromagnetic layer. The first ferromagnetic layer should be antiferromagnetically coupled (K2) to the second ferromagnetic layer via a non-magnetic coupling layer. In addition, the side of the first ferromagnetic layer facing away from the coupling layer should be provided with an antiferromagnetic additional layer and be exchange-coupled (K3) thereto and, in addition, should have a material composition that differs from the second ferromagnetic layer.
    Type: Application
    Filed: February 11, 2004
    Publication date: November 25, 2004
    Inventor: Hans Boeve
  • Patent number: 5618738
    Abstract: A method of manufacturing a magnetoresistance element that can accurately sort out truely defective products from apparently defective products due to the manufacturing processes. Manufacturing processes for MR elements includes a MR element formation process, a magnetic field application process and an electric inspection process. In the magnetic field process, the magnetic field application is limited to a range within 75.degree. to the longitudinal direction of a MR element pattern. By performing the magnetic field application process before the electric inspection process, the anisotropic magnetic field due to a shape magnetic anisotropy of the MR element can be aligned almost in a fixed direction, defective products due to the manufacturing processes can exactly be sorted out from the apparently defective products in the electric inspection process, so that the yield rate can be improved.
    Type: Grant
    Filed: March 14, 1995
    Date of Patent: April 8, 1997
    Assignee: Nippondenso Co., Ltd.
    Inventors: Kenichi Ao, Minoru Murata, Hiroki Noguchi, Yoshimi Yoshino, Hirofumi Uenoyama
  • Patent number: 4922126
    Abstract: To derive a stable square-wave signal from a measurement-signal voltage obtained from a voltage divider and containing a DC component and an AC component, the low end of the voltage divider is grounded through a load resistor shunted by the series combination of a resistor and a grounded capacitor. The low end is connected through the resistor to the negative input of a comparator and through an additional resistor to the positive input of the comparator. This positive input is also connected through a feedback resistor to the output of the comparator. The low end is connected to the supply voltage (U.sub.V) via a second voltage divider whose first resistor is formed by a controllable, temperature-stabilized zener diode connected to the supply voltage (U.sub.V) through the second resistor of the second voltage divider. The measurement-signal voltage (U.sub.M) obtained from the tap of the first voltage divider is applied to the control electrode of the zener diode.
    Type: Grant
    Filed: March 30, 1988
    Date of Patent: May 1, 1990
    Assignee: Alcatel N.V.
    Inventor: Helmut Lowel
  • Patent number: 4835415
    Abstract: A circuit for amplifying a measurement signal having an AC component and obtained from the tap of a voltage divider which is connected via a dropping resistor to a supply voltage and includes at least one magneto-resistor, and for shaping the measurement signal into an output signal of approximately rectangular shape. To simplify the circuit and reduce the number and size of the components and leads to a minimum, the current produced by the supply voltage is changed essentially in accordance with the changes of the AC component of the measurement signal by connecting a controllable impedance into the supply-voltage lead, the impedance being controlled by the measurement signal.
    Type: Grant
    Filed: February 22, 1988
    Date of Patent: May 30, 1989
    Assignee: Standard Elektrik Lorenz Aktiengesellschaft
    Inventor: Helmut Lowel
  • Patent number: 4301418
    Abstract: A process and a small, sensitive, low noise, high gain, power amplifier used in the process, for exploiting the anisotropic magnetoresistance effect in a ferromagnetic thin-film. The magnetization of the thin-film is biased to lie along the hard axis. The amplifier is configured so that a sensing current in the thin-film flows at an angle of forty-five degrees to the nominal direction of magnetization, and the current to be amplified produces a magnetic field parallel to the easy axis of the thin-film.
    Type: Grant
    Filed: September 13, 1978
    Date of Patent: November 17, 1981
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Daniel I. Gordon, Leonard J. Schwee, Wallace E. Anderson