Abstract: The invention relates to a current measuring resistor (1) for measuring an electrical current, in particular in the kA range, in a high-voltage network. The current measuring resistor (1) according to the invention comprises two connection parts (2, 3) for conducting the electrical current in and out and a resistance element (4) made of a low-impedance resistive material. The resistance element (4) is arranged between the two connection parts (2, 3) in the direction of current flow and is joined to the two connection parts (2, 3), such that the electrical current to be measured flows through the resistance element (4) during operation and produces a voltage drop across the resistance element (4). According to the invention, the connection parts (2, 3) and the resistance element (4) each have a substantially round cross section, in particular a substantially circular cross section, in a section plane perpendicular to the direction of current flow of the electrical current.

Abstract: A chip resistor includes first and second electrodes spaced apart from each other, a resistor element arranged on the first and the second electrodes, a bonding layer provided between the resistor element and the two electrodes, and a plating layer electrically connected to the resistor element. The first electrode includes a flat outer side surface, and the resistor element includes a side surface facing in the direction in which the thirst and the second electrodes are spaced. The outer side surface of the first electrode is flush with the side surface of the resistor element. The plating layer covers at least a part of the outer side surface of the first electrode in a manner such that the covering portion of the plating layer extends from one vertical edge of the outer side surface to the other vertical edge.

Abstract: A secondary battery including a circuit board unnecessitating a cut-out portion is provided. The secondary battery includes a battery cell having a cell tab, a protective circuit module electrically connected to the cell tab and having a circuit pattern formed therein, and a connection tab attached to the protective circuit module and electrically connected to the circuit pattern, wherein the connection tab includes a conductive layer adhered to the protective circuit module and including a first plating layer formed on the conductive layer and a second plating layer formed on the first plating layer, and the cell tab is welded to the connection tab.

Abstract: A chip resistor includes first and second electrodes spaced apart from each other, a resistor element arranged on the first and the second electrodes, a bonding layer provided between the resistor element and the two electrodes, and a plating layer electrically connected to the resistor element. The first electrode includes a flat outer side surface, and the resistor element includes a side surface facing in the direction in which the thirst and the second electrodes are spaced. The outer side surface of the first electrode is flush with the side surface of the resistor element. The plating layer covers at least a part of the outer side surface of the first electrode in a manner such that the covering portion of the plating layer extends from one vertical edge of the outer side surface to the other vertical edge.

Abstract: An over-current protection device comprises a resistance material with positive or negative temperature coefficient and an upper surface and a lower surface; a first electrode layer having a first groove, disposed on the upper surface; a first surface mount pad disposed on the upper surface; a second electrode layer disposed on the lower surface, electrically connecting to the first surface mount pad; a second surface mount pad disposed on the lower surface, electrically connecting to the first electrode layer; a second groove electrically separating the first surface mount pad from the first electrode layer; and a third groove electrically separating the second electrode layer from the second surface mount pad. The first groove divides the first electrode layer into two connected regions. The first and second surface mount pads are separated from each other and one end of the first groove connects to the second groove.

Abstract: An over-current protection device comprises a PTC material layer, first and second conductive layers, first and second electrodes, and four conductive vias. The first and second conductive layers are in physical contact with first and second surfaces of the PTC material layer, respectively. The first electrode contains a pair of first metal foils, and the second electrode contains a pair of second metal foils. The four conductive vias are formed at the corners each defined by two adjacent planar lateral surfaces. Two conductive vias connect the pair of the first metal foils and the first conductive layer, and the other two conductive vias connect the pair of the second metal foils and the second conductive layer. The ratio of the sum of the cross-sectional areas of the conductive vias to a form factor area of the device is in the range of 7% to 20%.

Abstract: An over-current protection device includes a first conductive member, a second conductive member, a resistive device and a temperature sensing switch. The first conductive member includes a first electrode foil and a second electrode foil those are formed on a same plane. The resistive device is laminated between the first conductive member and the second conductive member and exhibits positive temperature coefficient or negative temperature coefficient behavior. The temperature sensing switch can switch the first electrode foil and the second electrode foil between electrically conductive status and current-restriction status, e.g., open circuit, according to temperature variation. The threshold temperature of the temperature sensing switch is lower than the trip temperature of the resistive device.

Abstract: A co-fired multi-layer stack chip resistor is provided. The co-fired multi-layer stack chip resistor includes a ceramic substrate and a multi-layer stack resistance structure monomer. The ceramic substrate is formed by stacking multiple layers of the ceramic membranes, wherein the ceramic membranes is formed of a bearing membrane and a porcelain slurry with the solvent, the binder and the dispersant. The multi-layer stack resistance structure monomer is stacked on the ceramic substrate, and includes multiple bearing membranes and multiple resistive layers, wherein each resistive layer is formed on the surface of the corresponding bearing membrane, the resistive layers are parallel to each other, and the contiguous resistive layers are stacked with the interval of the predetermined distance along the vertical direction.

Abstract: To provide manufacturing method for resistor that uses metal plate as resistance body, which can obtain desired accurate resistance value without trimming resistance body even if product becomes small. The method comprises; in method for manufacturing an unit resistor that has a pair of electrodes separated by insulation film, from resistor material that is provided with a metal plate consisting of resistance material, an insulation film pattern formed on the metal plate, and an electrode region formed besides area where insulation film pattern has been formed, by piercing predetermined piercing area, wherein length E of insulation film pattern is longer than width w of piercing area, wherein width L of insulation film pattern extends or narrows along direction of length E of insulation film pattern, and wherein position X of piercing area is adjusted in extent and in direction of length E of insulation film pattern.

Abstract: An over-current protection device includes a conductive composite having a first crystalline fluorinated polymer, a plurality of particulates, a conductive filler, and a non-conductive filler, wherein the plurality of particulates include a second crystalline fluorinated polymer. The first crystalline fluorinated polymer has a crystalline melting temperature of between 150 and 190 degrees Celsius. The plurality of particulates including the second crystalline fluorinated polymer are disposed in the conductive composite, having a crystalline melting temperature of between 320 and 390 degrees Celsius and having a particulate diameter of from 1 to 50 micrometers. The conductive filler and the non-conductive filler are dispersed in the conductive composite.

Abstract: A metal strip resistor is provided with a resistive element disposed between a first termination and a second termination. The resistive element, first termination, and second termination form a substantially flat plate. A thermally conductive and electrically non-conductive thermal interface material such as a thermally conductive adhesive is disposed between the resistive element and first and second heat pads that are placed on top of the resistive element and adjacent to the first and second terminations, respectively.

Abstract: There are provided a process for manufacturing a PTC device as well as a PTC device manufactured by such process wherein a resin coating for preventing the oxidation can be easily formed. The PTC device includes (A) a polymer PTC component (14) comprising: (a1) an electrically conductive filler, and (a2) a polymer material wherein the polymer PTC component is defined by opposite main surfaces and a side surface connecting outer peripheries of these main surfaces, and (B) layered metal electrodes (12, 22) placed on the main surfaces on both sides of the polymer PTC component. The PTC device has a support member (20) extending outward from a periphery of at least one of the main surfaces, and the side surface of the polymer PTC component is sealed from an ambient environment around the PTC device by a cured curable resin (24) disposed and supported on the support member.

Abstract: A chip-like electric component such as a chip resistor is provided, which is easy to manufacture and in which cracks or fractures of an insulating substrate are unlikely to occur. A pair of surface electrodes 21, 23 are formed so that thicknesses of the pair of surface electrodes increase from a resistor layer 13 toward end portions 30 of an insulating substrate 29 in a direction in which the pair of surface electrodes 21, 23 are arranged. A plating reservoir S is formed between one of the surface electrodes 21, 23 and an insulating protective layer 15. When forming at least one plated layer 33, a plated metal pools in the plating reservoir S. The at least one plated layer 33 may work to reduce to some extent a height difference between a soldering electrode portion 21, 23, 27, 33 and the insulating protective layer 15.

Abstract: A laminated body and fabrication method thereof, which allow space saving and control of variation in internal layer resistance, are provided. When forming an internal-layer resistive element 7 in a multilayer ceramic substrate 10, the internal-layer resistive element 7 is connected to exterior electrodes (an upper surface electrode 32 and an undersurface electrode 34) via multiple via-electrodes 3a and 3b arranged in parallel, without a pad electrode adopted in the conventional laminated body. Moreover, in a multilayer ceramic substrate having multiple internal-layer resistive elements arranged in a multilayer structure, multiple internal-layer resistive elements are directly connected via multiple via-electrodes arranged in parallel.

Abstract: A multilayer chip varistor is provided as one capable of suppressing production of cracks and thereby preventing a connection failure between an internal electrode and a through-hole conductor. An internal electrode 21 is so configured as to be curved toward a direction of penetration of a through hole 10 in a connection portion 28 thereof to a through-hole conductor 27. By this configuration, a region T sandwiched between a curved surface 28a of the connection portion 28 and the through-hole conductor 27 is formed in a varistor layer 9 near the connection portion 28. In this region T, a metal concentration thereof becomes higher because of diffusion of metal of the internal electrode 21 and the through-hole conductor 27 into the varistor layer 9, and therefore, after completion of firing, the region T has an intermediate contraction percentage between that of the internal electrode 21 and through-hole conductor 27 and that of the other region of the varistor layer 9.

Abstract: The present invention is to provide an electronic component where positional accuracy for arranging members constituting a circuit element such as a resistor element and the like is mitigated and corrosion of a terminal electrode caused by sulfur in the atmosphere is reduced.

Abstract: A PTC thermistor provided with a conductive member having PTC characteristics and two electrodes each placed in two different locations on the conductive member. The, conductive member and at least one of the two electrodes is bonded via an adhesive which has conductivity and which at the same time deteriorates in an overheated state and irreversibly increases the electrical resistance.

Abstract: The invention relates to an arrangement comprising a shunt resistor with at least an electrically conductive first connecting leg and an electrically conductive second connecting leg. A resistance area of the shunt resistor is electrically connected to the first connecting leg and to the second connecting leg. The arrangement further comprises a circuit carrier with a first metallization and a second metallization. The first connecting leg is directly joined to the first metallization and the second connecting leg is directly joined to the second metallization. The resistance area of the shunt resistor is in thermal contact with the thermally conductive substrate by use of a thermal filler arranged between the resistance area and the substrate, and/or by directly contacting the resistance area with the substrate. The invention further relates to a method for producing an arrangement with a shunt resistor and a circuit carrier.

Abstract: A metal strip resistor is provided with a resistive element disposed between a first termination and a second termination. The resistive element, first termination, and second termination form a substantially flat plate. A thermally conductive and electrically non-conductive thermal interface material such as a thermally conductive adhesive is disposed between the resistive element and first and second heat pads that are placed on top of the resistive element and adjacent to the first and second terminations, respectively.

Abstract: A ceramic heater comprising a ceramic body, a heat generating resistor buried in the ceramic body, an electrode pad that is electrically connected to the heat generating resistor and is formed on the surface of the ceramic body and a lead member bonded onto the electrode pad.

Abstract: There is provided a method for manufacturing rectangular plate type chip resistors which provides easy and convenient control of resistance, and easy and low cost manufacture of rectangular plate type chip resistors having a reliable electrode structure, as well as a rectangular plate type chip resistor obtained by this method and having excellent properties particularly at low resistance.

Abstract: A lamination-type resistance element includes a laminated sinter having internal electrodes of a first group and internal electrodes of a second group, the first internal electrode group including a plurality of internal electrodes facing each other through a ceramic resistance layer and defining a resistance unit at the portion where the plurality of internal electrodes face each other. A first end of the resistance unit is connected to a first external electrode and the second end is connected to a second external electrode. The second internal electrode group includes a plurality of pairs of internal electrodes in which the inner ends face each other through a gap on the same plane inside the laminated sinter, and a plurality of pairs of gaps in the plurality of internal electrodes are arranged at the same location when seen from one end of the lamination direction of the laminated sinter. Thereby, fine adjustment of a resistance value can be performed.

Abstract: A laminated chip varistor comprises a varistor body, first and second inner electrodes, a heat conductor, and first and second outer electrodes. The varistor body has first and second outer faces. The first and second inner electrodes are disposed in the varistor body so that at least portions thereof are opposing to each other. The first and second outer electrodes are formed on the first outer face, the first outer electrode being connected to the first inner electrode, and the second outer electrode being connected to the second inner electrode. The heat conductor is formed in the varistor body extending in a direction from the first outer face toward the second outer face with one end face thereof exposed on the first outer face and the other end face thereof exposed on the second outer face.

Abstract: A varistor comprises a varistor element body, first and second inner electrodes opposing each other, a first outer electrode connected to the first inner electrode physically and electrically, a second outer electrode connected to the second inner electrode physically and electrically, and an electrically insulating layer. The first and second inner electrodes are arranged within the varistor element body so as to have end portions exposed at two outer surfaces of the varistor element body. The first outer electrode is arranged on one of the two outer surfaces so as to cover a portion of the end portion of the first inner electrode exposed at the one outer surface. The second outer electrode is arranged on the one outer surface so as to cover a portion of the end portion of the second inner electrode exposed at the one outer surface.

Abstract: A multilayer positive temperature coefficient thermistor that has semiconductor ceramic layers containing a BaTiO3-based ceramic material as a primary component, and at least one element selected from the group consisting of Eu, Gd, Tb, Dy, Y, Ho, Er, and Tm as a semiconductor dopant in the range of 0.1 to 0.5 molar parts with respect to 100 molar parts of Ti. The ratio of the Ba site to the Ti site is in the range of 0.998 to 1.006. Accordingly, even when the semiconductor ceramic layers have a low actual-measured sintered density in the range of 65% to 90% of a theoretical sintered density, a multilayer positive temperature coefficient thermistor having a sufficiently high rate of resistance change and a high rising coefficient of resistance at the Curie temperature or more can be realized.

Abstract: A chip resistor (A1) includes a chip-like resistor element (1), two electrodes (31) spaced from each other on the bottom surface (1a) of the resistor element, and an insulation film (21) between the two electrodes. Each electrode (31) has an overlapping portion (31c) which overlaps the insulation film (21) as viewed in the vertical direction.

Abstract: A multilayer positive temperature coefficient thermistor that has a BaTiO3-based ceramic material contained as a primary component in semiconductor ceramic layers, the ratio of the Ba site to the Ti site is in the range of 0.998 to 1.006, and at least one element selected from the group consisting of La, Ce, Pr, Nd, and Pm is contained as a semiconductor dopant. In this multilayer positive temperature coefficient thermistor, a thickness d of internal electrodes layer and a thickness D of the semiconductor ceramic layers satisfy d?0.6 ?m and d/D<0.2. Accordingly, even when the semiconductor ceramic layers have a low sintered density such that an actual-measured sintered density is 65% to 90% of a theoretical sintered density, a multilayer positive temperature coefficient thermistor having a low rate of temporal change in room-temperature resistance can be obtained without performing any complicated processes, such as a heat treatment. When the content of the semiconductor dopant is 0.1 to 0.

Abstract: A chip-type component 11 includes an insulating chip substrate 12 whose upper surface is provided with a resistor element 13 and a cover coat 14 covering the resister film. At the opposite ends of the substrate, terminal electrode films 15, 16 are formed for the resistor element in a manner such that they extend onto the lower surface 12a of the insulating substrate. The lower surface 12a of the substrate is provided with an insulating projection 18 between the terminal electrode films, where the projection includes a peak portion 18a positioned at or near the center of the insulating substrate in a longitudinal direction along which the terminal electrode films are spaced from each other. This prevents the insulating substrate from breaking when the chip-type component 11 is vacuum-sucked by a collet nozzle 19 to be supplied to a printed circuit board 17.

Abstract: The present invention provides a novel method for electrical connection between a polymer PTC device and a metal lead element to thereby prevent the problems of the connection by caulking or soldering. For this purpose, the present invention provides a process for producing a connection structure by laser welding, said connection structure having (A) a PTC device (10) including (i) a laminar polymer PTC element (12) and (ii) a metal foil electrode (14) disposed on a main surface of the laminar polymer PTC element (12), and (B) a metal lead element (20) electrically connected to the metal foil electrode. The metal foil electrode (14) has at least two metal layers, one of which, the X-th layer, has laser beam absorption a % that is the lowest among the metal layers of the metal foil electrode (14). The X-th layer is present between a first metal layer (18) of the metal foil electrode and the laminar polymer PTC element (12).

Abstract: A heater strip for use as a heating element in an electric heater is made up of a profiled strip made of a flat metallic material forming a resistor section and of mounting elements extending over one common longitudinal side and they are manufactured as one piece with the resistor section for mounting the heater strip to a support. The strip has a zigzag-shaped structure. The mounting elements are provided only on the flat leg sections of the zigzag-shaped heater strip.

Abstract: An over-current protection device comprises two metal foils and a PTC material layer laminated between the two metal foils. The PTC material layer essentially comprises a polymer matrix and a conductive filler. The polymer matrix at least comprises a first crystalline polymer, e.g., LDPE, and a second crystalline polymer, e.g., PVDF, in which the melting temperature of the second crystalline polymer subtracting the melting temperature of the first crystalline polymer is equal to or more than 50° C. The conductive filler is selected from metallic grain of a volumetric resistivity less than 500 ??-cm, and is distributed in the polymer matrix. The initial volumetric resistivity of the PTC material layer is less than 0.1?-cm, and the trip temperature of the PTC material layer at which the resistance thereof increases to 1000 times the initial resistance subtracting the melting temperature of the first crystalline polymer is less than 15° C.

Abstract: A method of manufacturing a PTC element comprising a pair of lead terminals bonded together by thermocompression with a matrix held therebetween comprises a matrix preparing step of preparing a matrix constructed by dispersing a conductive filler into a crystalline polymer; a terminal preparing step of preparing a pair of lead terminals holding the matrix therebetween, a surface of each lead terminal facing the matrix being formed with a plurality of anchor protrusions separated from each other; a flattening step of flattening the anchor protrusions formed in respective nonoverlapping areas in the pair of lead terminals kept from overlapping the matrix; and a thermocompression bonding step of holding the matrix between respective overlapping areas in the pair of lead terminals overlapping the matrix, and securing the pair of lead terminals and the matrix together by thermocompression bonding.

Abstract: An over-current protection device comprises two metal foils and a positive temperature coefficient (PTC) material layer laminated between the two metal foils. The PTC material layer includes: (1) a polymer substrate, being 35-60% by volume of the PTC material layer and including a fluorine-containing crystalline polymer with a melting point higher than 150° C., e.g., polyvinylidine fluoride (PVDF); and (2) a conductive ceramic filler (e.g., titanium carbide) distributed in the polymer substrate. The conductive ceramic filler is 40-65% by volume of the PTC material layer, and has a volume resistivity less than 500 ??-cm. The volume resistivity of the PTC material layer is less than 0.1 ?-cm, and the ratio of the hold current of the PTC material layer at 25° C. to the area of the PTC material layer is between 0.05 and 0.2 A/mm2.

Abstract: Chip resistor includes the rectangular first substrate made of ceramics and having surfaces, the rectangular second substrate made of ceramics and having surfaces, and a joint layer interposed between the surfaces, and electrodes are formed on two opposing sides of the substrate and resistor is formed between the electrodes. Further, electrodes are formed on two opposing sides of the substrate and resistor is formed between the electrodes.

Abstract: A conductive substrate with a resistance layer comprising a substantially flat high conductivity substrate roughening treated on its surface by a resistance component and provided with a resistance layer by the resistance component so as to enable the interface between the high conductivity substrate and resistance component layer to be substantially flattened, enable acquisition of a thin film resistance layer with a stable resistance after dissolving away the high conductivity substrate, and able to maintain the peel strength with the insulating support, and a resistance board using the same.

Abstract: A thermistor of which resistance is changed depending on temperature and a secondary battery to which the thermistor is attached are disclosed. The thermistor is attached to an object via a lead which is made of different kinds of materials. The lead is configured so that a part of the lead to be united to the thermistor electrode is mainly made of the same material as the electrode and a part of the lead to be united to the object is mainly made of the same material as the surface of the object. Thus, the thermistor may be simply attached to the object only using the ultrasonic welding, thereby remarkably reducing junction inferiorities.

Abstract: The organic NTC composition according to the present invention is a mixture of a conjugated organic semiconductor polymer and a thermoplastic resin or thermosetting resin. For example, the mixed amount of the thermoplastic resin or thermosetting resin is preferably equal to or lower than two times the amount of the conjugated organic semiconductor polymer, and a conjugated organic semiconductor polymer selected from solvent-soluble polyaniline, polythiophene, polypyrrole and their derivatives is preferably used. This organic NTC composition makes it possible to provide an organic NTC device without using any expensive material and facilitates easy production at low temperatures.

Abstract: An over-current protector comprised of multiple over-current protection devices each at various switching temperature and provided with positive temperature coefficient; all devices being stacked and segregated with an reinforced insulation layer and connected in parallel through a conducting mechanism each respectively provided at where in relation to both ends of the device; both conducting mechanisms constituting the terminal electrodes of the over-current protector as a whole for reducing initial resistance, increasing peak resistance, and in turn upgrading voltage withstanding performance.

Abstract: A chip resistor includes: an insulating chip substrate 11 having an upper surface formed with a resistive film 12 and a pair of left and right upper electrodes 13 at two ends thereof; a cover coat 14 covering the resistive film; auxiliary upper electrodes 15 formed on upper surfaces of the upper electrodes 13 to overlap the cover coat 14; a left and a right side electrodes 16 formed on a left and a right end surfaces 11a of the insulating substrate 11; and metal plate layers formed on surfaces of the auxiliary upper electrodes and side electrodes. The cover coat 14 is formed with an uppermost over coat 19 covering a region where the auxiliary upper electrodes 15 overlap the cover coat 14, whereby the upper electrodes 13 and the auxiliary upper electrodes 15 are protected from migration caused by sulfur gases.

Abstract: A positive temperature coefficient thermistor has a non-heating portion which is not heated when a voltage is applied between first and second internal electrodes. The non-heating portion is provided in the approximate center of the positive temperature coefficient thermistor and is arranged to extend along a direction that is substantially perpendicular to a lamination direction of the positive temperature coefficient thermistor. The non-heating portion is arranged at least in the approximate center in the lamination direction of the portion of the laminate where the first and the second internal electrodes are arranged. Thus, a hot spot is reliably prevented from occurring inside the laminate when voltage is applied. As a result, the withstand voltage property is greatly improved. The non-heating portion may include a cavity provided in at least one thermistor layer or an opening or cut portion provided in the internal electrode.

Abstract: A composite circuit protection device includes a laminar insulating member and first and second laminar circuit protection devices.

Abstract: A metal plate resistor includes a resistive body comprising a metal plate, and at least a pair of electrodes joined respectively to opposite ends of the resistive body, the electrodes being made of a highly conductive metal conductor. The resistive body has a main section positioned between the electrodes and a pair of electrode sections progressively wider than the main section in directions away from the main section. The electrodes are disposed respectively beneath the electrode sections and identical in shape to the electrode sections.

Abstract: A thick-film resistor component may include a thick film component formed between a thick-film resistor and an electrically conductive sheet, wherein a portion of the sheet is selectively removed to form resistor contacts while exposing a portion of the thick-film component. Electrical terminals to a thick-film resistor may be sized to reduce stress and/or be selectively positioned relative to the resistor to define a desired resistor value. A thick-film resistor may include one or more resistor segments configured to be selectively open-circuited to incrementally adjust the value of the resistor.

Abstract: A surface mountable PTC device includes a PTC layer, first and second electrodes formed on the PTC layer, first and second insulating layers formed respectively on the first and second electrodes, and first and second terminals connected respectively and electrically to the first and second electrodes. Each of the first and second electrodes is formed with a hole. Each of the first and second insulating layers fills the electrode hole in the respective one of the first and second electrodes and is formed with an insulating hole surrounded by the electrode hole. Each of the first and second terminals extends through the insulating hole in the respective one of the first and second insulating layers.

Abstract: An electrical device in which an element composed of a conductive polymer composition is positioned in contact with the first surface of a metal electrode, the first surface having a center line average roughness Ra and a reflection density RD, the product Ra times RD being 0.5 to 1.6 ?m. The conductive polymer composition preferably exhibits PTC behavior. In a second embodiment an electrical device has an element composed of a conductive polymer composition in contact with the first surface of a metal electrode produced by providing a base metal foil having an Ra of at most 0.45 ?m and depositing material onto the base metal foil to form a first surface having a product of Ra times RD of at least 0.14 ?m. Other embodiments include electrical devices with metal electrodes made by pulse plating processes, and metal electrodes made by electrodeposition under diffusion-limited conditions. The electrical devices may be circuit protection devices and have improved electrical and physical properties.

Abstract: There is provided a method for producing a metal/ceramic bonding article, the method including the steps of: arranging a metal plate 12 of an overall-rate solid solution type alloy on a ceramic substrate 10; and heating the metal plate 12 and the ceramic substrate 10 in a non-oxidizing atmosphere at a temperature of lower than a melting point of the alloy to bond the metal plate 12 directly to the ceramic substrate 10. According to this method, it is possible to easily bond an alloy plate directly to a ceramic substrate, and it is possible to inexpensively provide an electronic member for resistance without causing the alloy plate to be deteriorated.

Abstract: The present invention relates to an electrical resistor (1), in particular for measuring alternating currents of high frequency, comprising connectors (2, 3) for feeding the current to be measured and connectors (4, 5) for tapping the voltage to be measured and having a layered structure including at least one resistive layer (10), a return conducting layer (11) and any possibly provided insulating layers (7, 12, 21, 22, 24). To obtain a measuring resistance having a particularly good frequency response, a high long-term stability and an efficient cooling and which, moreover, is inexpensive to produce, it is provided for the resistive layer (10) together with the return conducting layer (11) and the possible insulating layers (7, 12, 21, 22, 24) to be part of a multilayered printed circuit board and to comprise a plurality of conductive tracks (14) extending from a central region of the resistive layer (10) towards outside.

Abstract: The present invention discloses a surface mountable laminated thermistor device which utilizes current-used double sided metal foil clad substrate as a base material and a PTC conductive composite that complies with circuit connection design combinations among electrodes to obtain a surface mountable laminated thermistor device with a parallel manner, and vastly simplify the fabrication process of the surface mountable laminated thermistor device.

Abstract: An electrical resistor has a surface mounted four terminal current sensor of a very low resistance value and capable of handling short pulses of high power. It comprises a flat metal late, 1 to 50 mils thick, of an alloy of high electrical resistivity, to which are welded, on two opposite sides, two flat metal plates of very high electrical conductivity which serve as terminations for electrical interconnection. A slot is cut, from the outside edge toward the center, into each of the two termination plates which divides them into a wide pad for connection of current carrying wires and a narrow one for voltage sensing. The depth of the slots is optimized to get the best stability of resistance readings with changing ambient temperature and under influence of the self-heating effect.

Abstract: A surface-mounted over-current protection device with positive temperature coefficient (PTC) behavior is disclosed. The surface-mounted over-current protection device comprises a first metal foil, a second metal foil corresponding to the first metal foil, a PTC material layer stacked between the first metal foil and the second metal foil, a first metal electrode, a first metal conductor electrically connecting the first metal foil to the first metal electrode, a second metal electrode corresponding to the first metal electrode, a second metal conductor electrically connecting the second metal foil to the second metal electrode, and at least one insulated layer to electrically insulate the first metal electrode from the second metal electrode. The surface-mounted over-current protection device, at 25° C., indicates that a hold current thereof divided by the product of a covered area thereof and the number of the conductive composite module is at least 0.16 A/mm2.