Abstract: Systems for controlling activation of a device are provided. In some examples, a system may receive biometric data from a user requesting to activate an event processing device. The biometric data may be compared to pre-stored data associated with an authorized user. If the received biometric data matches pre-stored data, the system may transmit an instruction to an event processing device to activate the event processing device. In some examples, activating the event processing device may include enabling the device for use in processing events. For instance, a chip arranged on the event processing device may be activated and enabled for use in processing an event based on the instruction. In some examples, activating an event processing device may include transmitting an instruction to one or more light emitting diodes to illuminate. Illumination of the LEDs may make visible event processing device information in an information display region that is not visible when the LEDs are not illuminated.

Abstract: A magnetic structure includes a first portion and a plurality of second portions. The first portion extends in a first direction. The plurality of second portions extend from ends of the first portion in a second direction. The first and second directions are perpendicular to one another. Two magnetic domains magnetized in directions opposite to each other and a magnetic domain wall between the magnetic domains are formed in the magnetic structure.

Abstract: A power saving device is configured in an all-in-one PC and has a power module expandably composed of a plurality of Ni-MH cells linked up either in series connection or in parallel connection. When an external alternating power provides power supply for the PC, a charging circuit of the power saving device charges the power module. When the alternating power is out or the PC is operated to enter a power saving mode, a controller of the power saving device notifies the PC to enter the power saving mode, while the power module provides power for the memory and memory controller of the PC with low power consumption. The all-in-one PC consumes little power while in power saving mode and is capable of restoring to its normal mode in short time. The power saving device enhances the all-in-one PC with features of instant-on, long-time standby, and backup power provision.

Abstract: A magnetic memory device includes a recording layer, a reference layer, a first input portion and a second input portion. The recording layer has perpendicular magnetization direction and a plurality of magnetic domains, and the reference layer corresponds to a portion of the recording layer and has a pinned magnetization direction. The recording layer has a data storage cell wherein a plurality of data bit regions each including a magnetic domain are formed. The magnetic domain corresponds to an effective size of the reference layer. The first input portion inputs at least one of a writing signal and a reading signal. The second input portion is electrically connected to the recording layer and inputs a magnetic domain motion signal in order to move data stored in a data bit region of the recording layer to an adjoining data bit region.

Abstract: A magnetic memory device is provided. The magnetic memory device may include a memory track in which a plurality of magnetic domains is formed so that data bits, each of which may be a magnetic domain, are stored in an array. The memory track may be formed of an amorphous soft magnetic material.

Abstract: A new read gate design for the vertical Bloch line (VBL) memory is disclosed which offers larger operating margin than the existing read gate designs. In the existing read gate designs, a current is applied to all the stripes. The stripes that contain a VBL pair are chopped, while the stripes that do not contain a VBL pair are not chopped. The information is then detected by inspecting the presence or absence of the bubble. The margin of the chopping current amplitude is very small, and sometimes non-existent. A new method of reading Vertical Bloch Line memory is also disclosed. Instead of using the wall chirality to separate the two binary states, the spatial deflection of the stripe head is used. Also disclosed herein is a compact memory which uses vertical Bloch line (VBL) memory technology for providing data storage. A three-dimensional arrangement in the form of stacks of VBL memory layers is used to achieve high volumetric storage density.

Abstract: An information recording and reproducing apparatus which has a memory portion which uses the Bloch lines occurring at the magnetic domain walls at the periphery of magnetic domains present in magnetic garnet films as the information carrier, a drive portion to write information into or read information from the said memory portion, and in which the memory portion is constructed to be connectable to and disconnectable from the drive means, wherein the signal transfer is carried out via a connection means when the said memory portion is set in the drive portion. In this information recording and reproducing apparatus, since the recording portion can be freely connected to or disconnected from the drive portion, it is possible to selectively insert portable substrates storing different information in the same apparatus body portion.

Abstract: In a solid state magnetic memory device wherein the information storing region of a Bloch line memory device using Bloch lines generated in magnetic domain walls as information carriers is covered with a magnetic material film having stripe domains perpendicular to the magnetic domain walls, the information storing position is determined by the stripe domains and a memory density of more than several tens giga bits per cm.sup.2 can be realized.

Abstract: A Bloch line magnetic memory has a magnetic film of thickness h located on a substrate and includes Bloch lines of width .LAMBDA.o. The magnetic film satisfies the condition (1) h/.LAMBDA.o<14 with .LAMBDA.o=.sqroot.A/2.pi.Ms.sup.2, in which A represents the magnetic exchange constant and 4.pi.Ms represents the saturation magnetization of the film.

Abstract: A nonvolatile random access memory array is formed by permalloy thin films patterned into "wiggle" shapes. Address lines for reading and/or writing into the memory cells are operatively connected to associated circuitry such that writing at a selected location in the array is accomplished using coincident currents. Each memory cell in the array is arranged for passage of column conducted current to effect magnetoresistance readout in conjunction with row address lines and the aforementioned associated circuitry.

Abstract: A Bloch line transferring method or system comprises a step of transferring only a first Bloch line of the Bloch line pair in the magnetic wall in a predetermined direction, and a step of transferring a second Bloch line of the Bloch line pair in the predetermined direction to form the Bloch line pair. It typically comprises applying a magnetic field perpendicular to a film plane of a magnetic thin film having the magnetic wall, to the magnetic thin film, and applying a magnetic field parallel to the film plane of the magnetic film, to the magnetic thin film along the magnetic wall.

Abstract: A transfer method for transferring Bloch lines present in the magnetic wall of a magnetic section formed in a magnetic thin film along the magnetic wall includes the steps of distributing a predetermined soft magnetic material layer pattern on the magnetic thin film, applying a magnetic field to the soft magnetic material layer pattern parallel to the film surface of the magnetic thin film to form a potential well in the magnetic thin film, positioning the Bloch lines in the potential well, and varying the direction of the magnetization of the soft magnetic material layer pattern in a plane parallel to the film surface to move the potential well along the magnetic wall and transfer the Bloch lines.

Abstract: Method for transferring the Bloch line present in the magnetic wall of the magnetic domain formed in the magnetic thin film, along the magnetic wall is characterized by the steps of forming a predetermined stress distribution along the magnetic wall in the magnetic thin film, positioning the Bloch line to a predetermined position in the magnetic wall in accordance with the stress distribution, and applying a pulsive magnetic field normally to a film plane of the magnetic thin film in synchronism with the formation of the stress distribution. The Bloch line is transferred from the predetermined position to another position by the stress distribution formation step and the magnetic field application step.

Abstract: In a method or device for detecting the presence and/or absence of a Bloch line in a magnetic wall of a magnetic domain formed in a thin magnetic film, a magnetic field parallel to the plane of the thin magnetic film is applied to the magnetic domain to cause a variation in the magnetic domain, the state of variation of the magnetic domain is detected and the presence and/or absence of a Bloch line in a predetermined position of the magnetic wall is detected according to the result of the detection of the state of variation set forth above.

Abstract: There are disclosed techniques concerning reading out Bloch lines in a Bloch line memory device, where pairs of Bloch lines are used as an information carrier. The pairs of Bloch lines are transferred to the head portion of a stripe magnetic domain and an inplane magnetic field is applied at the proximity of the head portion of the stripe magnetic domain so that the pairs of Bloch lines are split. In this way only one of the Bloch lines can exist stably at the head portion of the stripe magnetic domain. Then the Bloch lines are transformed into a magnetic bubble domain by making electric current to flow through a hair-pin shaped conductor disposed at the proximity of the head portion of the stripe magnetic domain. This magnetic bubble domain is detected by a magnetic bubble detector.

Abstract: A Bloch line read/write memory in which a Bloch line or lines near the end portion of a stripe domain are moved in a predetermined direction to turn the direction of a wall magnetization at the end portion to a right turn direction as viewed form the surface of a film on which a bubble chopping conductor is disposed, and thereby reduce erroneous reading errors and increase the chopping current margin.

Abstract: In a magnetic medium used in a Bloch-line memory device and having a first groove and a pair of second grooves deeper than the first groove with the first groove formed to leave a plateau extended on a principal surface in a predetermined direction between the second groove pair and having first and second end portions, a third groove is deeper than the first groove and has two portions spaced from the second end portion parallel and orthogonal to the predetermined direction. Adjacent to the second end portion, a primary conductor pair is formed on the first groove and adjacent to the second and the third grooves. Parallel to an easy axis of magnetization which is orthogonal to the principal surface, a magnetic domain is formed to surround the plateau by a bias magnetic field applied in a preselected direction parallel to the easy axis.

Abstract: A Bloch-line memory device comprises a magnetic medium including a read-out area and a potential barrier portion. The read-out area is on the principal surface of the magnetic medium and the potential barrier portion is located between the read-out area an a predetermined end portion of one or more domains. A pulsed magnetic field is strenghtened during a predetermined time interval to expand the magnetic domain towards the read-out area. When a magnetic domain with a single Block line at its end portion is expanded into the read-out area, the magnetic domain is chopped to produce a magnetic bubble. The magnetic bubble is detected by a detecting circuit and an output signal representative of an information signal is generated.

Abstract: A process for transferring Bloch lines formed in a magnetic wall of a magnetic domain and a magnetic memory apparatus for recording/reproducing information in utilizing Bloch lines formed in the magnetic wall of the magnetic domain as a information carrier are disclosed. The process comprises steps of forming a positive or negative magnetic charge area in the magnetic wall, thereby attaching a Bloch line to the area, and moving the magnetic charge area, thereby moving the Bloch line. The apparatus comprises a memory substrate having a stripe-shaped magnetic domain, a way to write Bloch lines in the magnetic wall of the stripe-shaped magnetic domain according to input information, a way to read the Bloch lines so stored to reproduce the information in the form of electric signals and a way to apply a rotating magnetic field parallel to the plane of the memory substrate, to the stripe-shaped magnetic domain, to move the Bloch lines along the magnetic wall.

Abstract: A method of transferring Bloch lines present in a domain wall of a magnetic domain formed in a thin magnetic firm, includes cyclically forming asymmetrical potential wells along the domain wall in order to locate the Bloch lines at predetermined positions of the domain wall, and applying a pulsed magnetic film to shift the Bloch lines from a predetermined potential well to another potential well. In a magnetic memory for recording information using Bloch lines as an information carrier, a memory substrate has a stripe magnetic domain defined by a domain wall along which asymmetrical potential wells are cyclically formed to stabilize the Bloch lines along the domain wall. The Bloch lines are written in the domain wall in accordance with input information, the Bloch lines so formed are read out, and the read-out Bloch lines are converted into an electrical signal.

Abstract: In a Bloch line memory device, information corresponds to the presence or absence of a Bloch line pair present in the magnetic wall of a stripe magnetic domain. Reading of information is effected by converting the presence and absence of a Bloch line pair into the presence and absence of a magnetic bubble domain. The conversion is effected such that, after the stripe magnetic domain has been shrunk in such a manner that no Bloch line is present therein, a magnetic field for chopping off the stripe magnetic domain is applied to the shrunken portion. Thus, when a Bloch line is present at an end portion of the stripe magnetic domain, the stripe magnetic domain is chopped off to form a magnetic bubble domain, whereas, when no Bloch line is present at the end portion of the stripe magnetic domain, the stripe magnetic domain is not chopped off and therefore no magnetic bubble domain is formed. Whether the magnetic bubble domain is present or absent is processed as information.

Abstract: In a magnetic memory device for use in selectively carrying out a write-in operation and a readout operation of a pair of vertical Bloch lines as an information carrier in a domain wall of a stripe domain extended along a longitudinal direction, a deflected in-plane magnetic field is applied to an end portion of the stripe domain and deflected relative to the longitudinal direction at an angle within an angle range by the use of a pair of magnetic units. The deflected in-plane magnetic field serves to stably hold a single Bloch line to a predetermined flank wall of the stripe domain during the write-in operation or to stably separate three Bloch lines from one another during the readout operation. Such application of the deflected in-plane magnetic field also serves to smoothly propagate each Bloch line.

Abstract: A Bloch line memory device comprises stripe magnetic domains in a magnetic film for holding magnetic bubble domains. A pair of Bloch lines is stored as an information carrier in a magnetic wall constructing the stripe magnetic domain. A longitudinal direction of the stripe magnetic domain is made parallel to either the crystalographic directions [112] and [112], [121] and [121], or [211] and [211] of the magnetic film so that the pair of Bloch lines can be smoothly moved in the magnetic wall of the stripe magnetic domain.

Abstract: A Bloch line memory device and a method of erasing information in which, for erasure of a Bloch line pair representative of one bit of information and located in one end portion of one stripe domain, the stripe domain is stretched by decreasing the intensity of a bias magnetic field, an erasure Bloch line pair having a rotation of magnetization opposite to that of the to-be-erased Bloch line pair is injected into the end portion of the stretched stripe domain by supplying a current pulse signal to a conductor arranged substantially perpendicualr to the lengthwise direction of the stripe domain, and the stretched stripe domain is shrinked by restoring the intensity of the bias magnetic field, so that the to-be-erased Bloch line pair is combined with the erasure Bloch line pair to cancel the former.

Abstract: A Bloch line memory device in which a stripe magnetic domain is formed within a magnetic film for holding magnetic bubble domains, and Bloch line pairs are stored as information carriers within a magnetic wall defining the magnetic domain. In order to write Bloch lines into the magnetic wall of the stripe magnetic domain, current is caused to flow through a single conductor which is so disposed as to cross the magnetic wall of the stripe magnetic domain. On this occasion, the current through the single conductor is so directed as to generate an in-plane field opposite in sense to magnetization within the magnetic wall of the stripe magnetic domain.

Abstract: In a Bloch-line memory wherein a magnetic film comprises a first and a second major line and a minor loop portion defined between the first and second major lines, successive presence and absence of magnetic bubbles being transferred along the first major line in response to a plurality of information signals, the information signals being memorized as vertical Bloch line pairs in domain walls of stripe-domains generated in the minor loop portion, the memorized vertical Bloch line pairs being propagated towards the second major line and being read out as bubbles into the second major line, the magnetic film is formed with a plurality of endless long grooves at desired locations in the minor loop portion and an endless stripe-domain is generated and stabilized in each endless long groove, so that the propagation of vertical Bloch line pairs can be performed step by step.

Abstract: Stabilization of the propagation of storage bits around the storage loops of a Vertical Bloch Line (VBL) memory is obtained by the vapor-deposition of a nickel-iron film over the VBL structure. The film has a composition range of 65-90% nickel and a thickness of 1,000 to 10,000 Angstroms, and is deposited in a vacuum of 10.sup.-4 to 10.sup.-6 Torr to provide parallel, periodic, magnetic stripe domains, and thus potential well domains, that have a periodicity in the range of 0.1 to 1 micron. The stripe domains are oriented perpendicular to the direction of data propagation and form potential wells along the elongated direction of the storage loops.

Abstract: In a magnetic memory device comprising a magnetic medium (21) having an easy axis of magnetization orthogonal to a principal surface of the medium, the medium has at least one stripe domain (20) surrounded by a domain wall which memorizes information in the form of a pair of vertical Bloch lines. Each pair is written in one end of the domain by supply of a local magnetic field to the one end when no magnetic bubble exists in the proximity of the one end. Each information is specified by absence or presence of each pair and successively transferred along the domain wall by a pulsed bias magnetic field. Readout operation is carried out at a preselected end of the stripe domain by supply of another local magnetic field to the preselected end to selectively chop the preselected end into a magnetic bubble only when each pair exists in the preselected end. Thus, presence and absence of each pair is converted into presence and absence of the bubble.

Abstract: The orthogonal conductors in a magnetic bubble display device each extend in only one direction across the magnetic medium and carry current in only one direction. Sector shaped recesses are formed between conductors for holding the bubbles.

Abstract: Herein disclosed is a laminated magnetic bubble device of a multiple layer structure composed of at least one thin magnetic film having low coercive force and vertically oriented anisotropy which can allow easy generation and erasure of a magnetic bubble, and at least one thin magnetic film having high coercive force and vertically oriented anisotropy which will not be affected by a magnetic field of low level used for generating the magnetic bubble in the thin film of low coercive force.

Abstract: Operating margins for major-minor magnetic bubble memories are improved by use of protective rails between minor loops to prevent loss of information due to stripout. The rails, as are the propagation paths, are defined by unimplanted regions in an otherwise ion-implanted layer. In another embodiment, unimplanted rectangular islands are used rather than rails.

Abstract: Disclosed is a displacement sensor, comprising a pair of plates of magnetic bubble material disposed parallelly to each other across a space and a galvanomagnetic element disposed within the magnetic field formed in the aforementioned space and adapted to be allowed to move parallelly to the inner surfaces of the aforementioned pair of plates. The sensor thus constructed detects displacement or vibration with the galvanomagnetic element retained in a non-contact relation with the pair of plates on the principle that the output signal from the galvanomagnetic element varies in proportion to the amount of movement of this element in the space in response to displacement or vibration.

Abstract: A magnetic memory device in which information is stored in the form of strip domains in a layer of magnetic material supported by a layer of ferromagnetic material. The ferromagnetic material contains a pattern of alternately magnetized strips for sustaining a magnetic field periodically varying in a first coordinate direction and directed transverse to the domain layer. The device also includes a generator for receiving and converting data into configurations of the strip domains in the plate.

Abstract: A process for thickening the relatively thin bonding pads of a single wall magnetic domain (bubble) device is disclosed. The process is particularly suited for thickening the pads defined by a buried metal layer, such as the conductive layer often disposed between the magnet garnet layer and permalloy layer. Windows are etched through a polyimide scratch protection layer to expose underlying bonding pads. A layer of gold is formed over this protective layer and over the exposed pads. The gold layer is washed away from the protective layer. Since the gold adheres only to the bonding pads, it remains to build up the thickness of these pads.

Abstract: A magnetic bubble storage system and a method for making it using only two masking steps, one of which is critical. In a preferred embodiment, the storage regions are comprised of ion implanted propagation elements which can be contiguous with one another. The functions of write, read, storage, transfer between storage elements in different shift registers, and annihilation are provided by the method in which the same mask is used to define ion implanted regions and for formation of conductor metallurgy. Permalloy bridges over ion implanted regions are used to provide transfer of information between one storage element and another. In a preferred embodiment, NiFe is used for sensing, annihilation, and transfer of information, while the storage registers are comprised of ion implanted regions defining contiguous propagation elements of generally circular geometry.

Abstract: A magnetic bubble device comprising a non-magnetic substrate layer, and a sequence of magnetic layers joined to each other and to the magnetic substrate layer, e.g. by epitaxial growing of crystalline layers, whereby at least two of the magnetic layers may accommodate magnetic bubbles which are stably joined through an interlayer magnetic compensation wall, or by an essentially finite potential barrier.

Abstract: In a display unit utilizing magnetic bubbles, selective extinction of the magnetic bubbles in a matrix results in a pattern of letters and/or images which are combinations of the magnetic bubbles as picture elements. The present display unit has in-plane anisotropic areas each of which has an easy magnetization axis parallel to the surface of the magnetic bubble material thin film produced by attaching the magnetically soft thin film on the magnetic bubble accommodation spaces in the magnetic bubble material thin film or by ion-implanting into the given spaces of the magnetic bubble material garnet. Therefore, according to this invention, the domain walls of the magnetic bubbles are attracted to said in-plane anisotropic areas and securely held at predetermined picture element positions.

Abstract: A laminated, integral structure that forms a bubble memory plane for the generation, storage and transfer of single wall domains, bubble domains or bubbles is disclosed. The memory plane is formed of a non-magnetic gadolinium gallium garnet (GGG) support member; formed upon the support member is a magnetizable layer that is capable of sustaining stripe domains; formed upon the stripe domain layer is a non-magnetic gadolinium gallium garnet (GGG) spacer layer; and, formed upon the spacer layer is a magnetizable layer in which single wall domains or bubbles are capable of being generated, sustained and transferred from one position to another along a planar dimension of the bubble domain layer.

Abstract: An apparatus for and a method of moving stripe domains in a direction transverse their length is disclosed. The apparatus includes a layer of magnetizable material in which stripe domains are capable of being generated, sustained and moved. Formed upon the magnetizable layer are two parallel contiguous disk files, each of which is formed of a plurality of linearly aligned similar contiguous Bicore disks. Each Bicore disk is comprised of a disk of a relatively soft magnetizable material, e.g., Permalloy, and a superposed disk of a relatively hard magnetizable material, e.g., Cobalt, sandwiching an insulative layer, e.g., silicon dioxide, SiO.sub.2, therebetween.

Abstract: Disclosed is an apparatus for and a method of propagating bubble domains along fixed guidance channel forming stripe domains by capturing them in moveable stripe domains and then moving the capturing moveable stripe domains. The memory plane comprises a non-magnetic Gadolinium Gallium Garnet (GGG) layer which is a supporting substrate upon which are successively formed by the liquid phase epitaxy (LPE) method: a first stripe domain layer, a first non-magnetic spacer layer; a bubble domain layer; a second non-magnetic spacer layer; a second stripe domain layer; and a third non-magnetic spacer layer upon which is formed the necessary propagation circuitry.

Abstract: An apparatus for and a method of propagating bubble domains is disclosed. The apparatus includes a memory plane that is comprised of a non-magnetic support member upon which are formed a bubble domain layer and at least one stripe domain layer. The stripe domain layer has a set of relatively-narrow, periodic, potential well generating fixed stripe domains provided therein while the bubble domain layer has a set of relatively-wide, parallel, potential well generating fixed guidance channels provided therein that are oriented orthogonal to the parallel set of stripe domains in the stripe domain layer. Bubble domains are concurrently entered, in parallel, at one end of the memory plane in selected ones of the guidance channels. A periodic amplitude modulated bias field of frequency F propagates each of the bubble domains along the associated guidance channel from adjacent to next downstream adjacent stripe domain and thus through the memory plane at the frequency F.

Abstract: There is disclosed an improved circuit element or structure for use in propagation of magnetic bubble domains. The improved circuit element permits a more desirable gap-to-period ratio than conventional element patterns. The improved circuit element provides portions thereof which are substantially parallel to similar portions of adjacent, similar circuit elements. As a consequence, the magnetic poles developed in the adjacent circuit elements by the application of the in-plane magnetic field are substantially identical at a given time thus facilitating interelement transfer.The circuit element structures are arranged in various propagation paths and operational components. Propagation paths and inter-propagation path elements are described.