Utilizing Particle (e.g., Electron Beam, Ion, Etc.) Bombardment Or Electromagnetic Wave Energy (e.g., Laser, Etc.) Treatment Of Selected Regions To Form Conducting Or Insulating Areas Patents (Class 505/325)
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Patent number: 11108172Abstract: The various embodiments described herein include methods, devices, and systems for fabricating and operating superconducting circuits. In one aspect, an electric circuit includes: (1) a first superconducting component having a first terminal, a second terminal, and a constriction region between the first terminal and the second terminal; (2) a second superconducting component having a third terminal and a fourth terminal; and (3) a first electrically-insulating component that thermally couples the first superconducting component and the second superconducting component such that heat produced at the constriction region is transferred through the first component to the second superconducting component.Type: GrantFiled: October 25, 2019Date of Patent: August 31, 2021Assignee: PSIQUANTUM CORP.Inventors: Faraz Najafi, Qiaodan Jin Stone
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Patent number: 9601681Abstract: Operational characteristics of an high temperature superconducting (“HTS”) film comprised of an HTS material may be improved by depositing a modifying material onto appropriate surfaces of the HTS film to create a modified HTS film. In some implementations of the invention, the HTS film may be in the form of a “c-film.” In some implementations of the invention, the HTS film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified HTS film has improved operational characteristics over the HTS film alone or without the modifying material. Such operational characteristics may include operating in a superconducting state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the HTS material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO.Type: GrantFiled: January 31, 2014Date of Patent: March 21, 2017Assignee: Ambature, Inc.Inventors: Douglas J. Gilbert, Timothy S. Cale
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Patent number: 9590161Abstract: A method of forming a superconductor includes exposing a layer disposed on a substrate to an oxygen ambient, and selectively annealing a portion of the layer to form a superconducting region within the layer.Type: GrantFiled: November 27, 2013Date of Patent: March 7, 2017Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Connie P. Wang, Paul Murphy, Paul Sullivan, Sukti Chatterjee
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Patent number: 9578752Abstract: The present invention relates to a method for manufacturing a board that includes a conductive pattern, which comprises the steps of 1) discharging a conductive inorganic composition that includes a conductive inorganic metal particle on a substrate; 2) discharging a conductive organic composition that includes a conductive organic metal complex on the conductive inorganic composition; and 3) sintering the conductive inorganic composition and the conductive organic composition, and a board that includes a conductive pattern manufactured by using the same. A board that includes a conductive pattern according to the present invention may have high conductivity even though it is sintered at a lower sintering temperature than a board that includes a conductive pattern formed by using only an organic material or only an inorganic material.Type: GrantFiled: February 5, 2010Date of Patent: February 21, 2017Assignee: LG CHEM, LTD.Inventor: Jung-Ho Park
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Patent number: 9543496Abstract: A method comprising irradiating a polycrystalline rare earth metal-alkaline earth metal-transition metal-oxide superconductor layer with protons having an energy of 1 to 6 MeV. The irradiating process produces an irradiated layer that comprises randomly dispersed defects with an average diameter in the range of 1-10 nm.Type: GrantFiled: March 17, 2014Date of Patent: January 10, 2017Assignee: UChicago Argonne, LLCInventors: Ulrich Welp, Dean J. Miller, Wai-Kwong Kwok, Martin W. Rupich, Steven Fleshler, Alexis P. Malozemoff
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Patent number: 9472324Abstract: Operational characteristics of an extremely low resistance (“ELR”) film comprised of an ELR material may be improved by depositing a modifying material onto appropriate surfaces of the ELR film to create a modified ELR film. In some implementations of the invention, the ELR film may be in the form of a “c-film.” In some implementations of the invention, the ELR film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified ELR film has improved operational characteristics over the ELR film alone or without the modifying material. Such operational characteristics may include operating in an ELR state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the ELR material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO.Type: GrantFiled: December 13, 2013Date of Patent: October 18, 2016Assignee: Ambature, Inc.Inventors: Douglas J. Gilbert, Timothy S. Cale
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Patent number: 9431156Abstract: In some implementations of the invention, existing extremely low resistance materials (“ELR materials”) may be modified and/or new ELR materials may be created by enhancing (in the case of existing ELR materials) and/or creating (in the case of new ELR materials) an aperture within the ELR material such that the aperture is maintained at increased temperatures so as not to impede propagation of electrical charge there through. In some implementations of the invention, as long as the propagation of electrical charge through the aperture remains unimpeded, the material should remain in an ELR state; otherwise, as the propagation of electrical charge through the aperture becomes impeded, the ELR material begins to transition into a non-ELR state.Type: GrantFiled: February 28, 2014Date of Patent: August 30, 2016Assignee: Ambature, Inc.Inventor: Douglas J. Gilbert
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Patent number: 9431594Abstract: The invention pertains to creating new extremely low resistance (“ELR”) materials, which may include high temperature superconducting (“HTS”) materials. In some implementations of the invention, an ELR material may be modified by depositing a layer of modifying material unto the ELR material to form a modified ELR material. The modified ELR material has improved operational characteristics over the ELR material alone. Such operational characteristics may include operating at increased temperatures or carrying additional electrical charge or other operational characteristics. In some implementations of the invention, the ELR material is a cuprate-perovskite, such as, but not limited to BSCCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.Type: GrantFiled: March 3, 2014Date of Patent: August 30, 2016Assignee: Ambature, Inc.Inventors: Douglas J. Gilbert, Timothy S. Cale
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Publication number: 20150148236Abstract: A method of forming a superconductor includes exposing a layer disposed on a substrate to an oxygen ambient, and selectively annealing a portion of the layer to form a superconducting region within the layer.Type: ApplicationFiled: November 27, 2013Publication date: May 28, 2015Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Connie P. Wang, Paul Murphy, Paul Sullivan, Sukti Chatterjee
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Publication number: 20150105262Abstract: The invention provides the Magnetoelectric Effect Material consisted of a single isotope, the alloy of isotopes, or the compound of isotopes. The invention applies enrichment and purification to increase the isotope abundance, to create the density of nuclear exciton by irradiation, and therefore increase the magnetoelectric effect of the crystal of single isotope, the alloy crystal of isotopes and the compound crystal of isotopes. The invention provides the manufacturing method including the selection rules of isotopes, the fabrication processes and the structure of composite materials. The invention belongs to the area of the nuclear science and the improvement of material character. The invention using the transition of entangled multiple photons to achieve the delocalized nuclear exciton. The mix of selected isotopes adjusts the decay lifetime of nuclear exciton and the irradiation efficiency to generate the nuclear exciton.Type: ApplicationFiled: February 3, 2012Publication date: April 16, 2015Inventor: Yao Cheng
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Patent number: 8716189Abstract: A method of producing a superconductive material involves the step (1) of applying a solution of an organic compound of metals, oxides of the metals forming a superconductive material, onto a support body to be subsequently dried, a provisional baking step (2) of causing organic components of the organic compound of the metals to undergo thermal decomposition, and a main baking process step (3) of causing transformation of the oxides of the metals into the superconductive material, thereby producing an epitaxially-grown superconductive coating material, wherein at the time of irradiation of a surface of the support body coated with the solution of the organic compound of the metals for forming the superconductive material, and/or of a surface of the support body, opposite to the surface coated with the solution of the organic compound of the metals, with the laser light, during a period between the steps (1) and (2).Type: GrantFiled: February 5, 2008Date of Patent: May 6, 2014Assignees: National Institute of Advanced Industrial Science and Technology, The Japan Steel Works, Ltd.Inventors: Mitsugu Sohma, Tetsuo Tsuchiya, Toshiya Kumagai, Kenichi Tsukada, Kunihiko Koyanagi, Takashi Ebisawa, Hidehiko Ohtu
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Patent number: 8182862Abstract: An ion source impinging on the surface of the substrate to be coated is used to enhance a MOCVD, PVD or other process for the preparation of superconducting materials.Type: GrantFiled: June 5, 2003Date of Patent: May 22, 2012Assignee: SuperPower Inc.Inventors: Venkat Selvamanickam, Hee-Gyoun Lee
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Publication number: 20120021916Abstract: A method and an apparatus for heating a sheet material made of an electrically conductive, non-magnetic material, the apparatus including at least one coil arrangement with DC-carrying windings that is made to rotate around an axis oriented perpendicular to the sheet material and to thereby induce eddy currents in the sheet material.Type: ApplicationFiled: May 23, 2011Publication date: January 26, 2012Applicant: ZENERGY POWER GMBHInventors: Carsten Buehrer, Christoph Fuelbier, Jens Krause
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Patent number: 7902119Abstract: Porous ceramic superconductors having a film thickness over 0.5 microns are provided. The superconducting material is applied to a vicinal substrate and optionally nanoparticles are inserted to release local strain. The resultant superconductors exhibit improved Jc values compared to nonvicinal (flat) counterparts and those having no nanoparticles.Type: GrantFiled: July 21, 2006Date of Patent: March 8, 2011Inventors: Judy Wu, Rose Emergo, Timothy Haugan, Paul Barnes
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Patent number: 7888290Abstract: The invention herein is directed towards a material exhibiting superconductivity characteristics which includes a laser processed region of a metal oxide crystal. The material has a transition temperature greater than a transition temperature of the metal oxide crystal, preferably greater than 140K. The transition temperature of the material may be considered greater than the transition temperature of the metal oxide crystal if the material has a transition temperature and the metal oxide crystal has no transition temperature. The present invention is also directed to a material which includes a laser processed strontium ruthenate crystal wherein the material has a greater oxygen content than the starting strontium ruthenate crystal. The present invention is also directed towards a method for manufacturing a material exhibiting superconductivity characteristics that includes providing a metal oxide crystal and laser ablating the metal oxide crystal and a material made by this process.Type: GrantFiled: September 12, 2006Date of Patent: February 15, 2011Inventors: Armen Gulian, Kent S Wood, Deborah Van Vechten, Vahan R Nikoghosyan
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Patent number: 7884051Abstract: The invention herein is directed towards a method of making material exhibiting superconductivity characteristics which includes a laser processed region of a metal oxide crystal. The material has a transition temperature greater than a transition temperature of the metal oxide crystal, preferably greater than 140K. The transition temperature of the material may be considered greater than the transition temperature of the metal oxide crystal if the material has a transition temperature and the metal oxide crystal has no transition temperature. The present invention is also directed to a material which includes a laser processed strontium ruthenate crystal wherein the material has a greater oxygen content than the starting strontium ruthenate crystal. The present invention is also directed towards a method for manufacturing a material exhibiting superconductivity characteristics that includes providing a metal oxide crystal and laser ablating the metal oxide crystal and a material made by this process.Type: GrantFiled: February 23, 2010Date of Patent: February 8, 2011Inventors: Armen M Gulian, Kent S Wood, Deborah Van Vechten, Vahan R Nikoghosyan
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Patent number: 7871961Abstract: A high efficiency catalyst for use in a catalytic partial oxidation process for the production of hydrogen or syngas gas from hydrocarbons is disclosed. The catalyst comprises rhenium in combination with a second metal selected from the group of rhenium to second metal of 25:1 to 1:1. the process comprises reacting a feed containing hydrocarbons with an oxygen source at a C/O ratio of about 0.9 to 1.1 in the presence of the catalyst, and wherein the gas hourly space velocity of the feed over the catalyst ranges from about 1,000 hr?1 to about 2,000,000 hr ?1. In the process, the catalyst is maintained as a temperature of from about 500° C. to about 1,500° C. as the feed makes contact with the catalyst.Type: GrantFiled: July 18, 2006Date of Patent: January 18, 2011Assignee: Sud-Chemie Inc.Inventors: Shizhong Zhao, X.D. Hu, David Patrick Tolle, David B. Rogers
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Publication number: 20100216646Abstract: A process for preparing a superconductor article includes depositing a precursor solution onto a substrate to form a precursor film, the precursor solution comprising precursor components to a rare earth-alkaline earth metal-transition metal oxide in one or more solvents, decomposing the precursor film to form an intermediate film comprising the rare earth metal, the alkaline earth metal, and the transition metal of the first precursor solution, selectively removing portions of the intermediate film, wherein a patterned intermediate film is obtained, and treating the patterned intermediate film to form a rare earth-alkaline earth metal-transition metal oxide superconductor.Type: ApplicationFiled: February 26, 2010Publication date: August 26, 2010Applicant: American Superconductor CorporationInventors: Thomas Kodenkandath, Wei Zhang
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Patent number: 7687436Abstract: Nanometer-sized non-superconducting particulates in superconductive REBCO films, where RE is a rare earth metal, for flux pinning enhancement and a method of forming are disclosed. A target with a second phase material sector portion and a superconductive material portion is used in a pulse laser deposition process to form films on substrates according to the present invention. The films consist of 10-20 nm-sized precipitates. In a 0.5 ?m thick film, a transport critical current density (Jc)>3 MA/cm2 at 77K in self-field was measured. In one embodiment, magnetization Jc at 77 K and 65K showed significant improvements in a composite YBCO films with fine precipitates produced according to the present invention as compared to non-doped (standard) YBCO films (>10 times increase at 9 T, 65 K).Type: GrantFiled: December 1, 2006Date of Patent: March 30, 2010Assignee: University of DaytonInventors: Chakrapani Varanasi, Paul N. Barnes
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Publication number: 20090318296Abstract: The invention provides a method of efficiently producing a superconductive material more excellent in properties without the occurrence of ablation and so forth, and large in area when executing thermal decomposition of an organic compound of metals, and formation of a superconductive material with heat treatment.Type: ApplicationFiled: February 5, 2008Publication date: December 24, 2009Inventors: Mitsugu Sohma, Tetsuo Tsuchiya, Toshiya Kumagai, Kenichi Tsukada, Kunihiko Koyanagi, Takashi Ebisawa, Hidehiko Ohtu
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Patent number: 7531205Abstract: A method of continuously coating at least one substrate with a buffer layer as a support for a ceramic superconducting material is disclosed. The method includes loading the at least one substrate onto a respective feed spool and feeding the at least one substrate through a vacuum deposition chamber. The method further includes coating the at least one substrate while the at least one substrate is bombarded by ion beams from dual RF-ion sources forming at least one coated substrate, and reloading the at least one coated substrate onto a respective take up spool.Type: GrantFiled: June 23, 2003Date of Patent: May 12, 2009Assignee: Superpower, Inc.Inventors: Venkat Selvamanickam, Srinivas Sathiraju
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Patent number: 7510997Abstract: The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.Type: GrantFiled: August 17, 2004Date of Patent: March 31, 2009Assignees: Applied Thin Films, Inc., UT-Battelle, LLCInventors: Sambasivan Sankar, Amit Goyal, Scott A. Barnett, Ilwon Kim, Donald M. Kroeger
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Publication number: 20080176749Abstract: Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic, superconducting and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.Type: ApplicationFiled: March 24, 2008Publication date: July 24, 2008Inventor: Amit Goyal
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Patent number: 6982240Abstract: A superconducting device operable at temperatures in excess of 30° K. and a method for making the device are described. A representative device is an essentially coplanar SQUID device formed in a single layer of high Tc superconducting material, the SQUID device being operable at temperatures in excess of 60° K. High energy beams, for example ion beams, are used to convert selected portions of the high Tc superconductor to nonsuperconductive properties so that the material now has both superconductive regions and nonsuperconductive regions. In this manner a superconducting loop having superconducting weak links can be formed to comprise the SQUID device.Type: GrantFiled: May 9, 1991Date of Patent: January 3, 2006Assignee: International Business Machines CorporationInventors: Gregory John Clark, Richard Joseph Gambino, Roger Hilsen Koch, Robert Benjamin Laibowitz, Allan David Marwick, Corwin Paul Umbach
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Patent number: 6949490Abstract: High-Tc superconducting ceramic oxide products and macroscopic and microscopic methods for making such high-Tc superconducting products. Completely sealed high-Tc superconducting ceramic oxide provides are made by a macroscopic process including the steps of pressing a superconducting ceramic oxide powder into a hollow body of a material inert to oxygen; heat treating the superconducting ceramic oxide powder packed body under conditions sufficient to sinter the ceramic oxide powder; and then sealing any openings of the body. Optionally, a waveform or multiple pulses of alternate magnetic filed can be applied during the heat treatment.Type: GrantFiled: June 9, 2003Date of Patent: September 27, 2005Inventor: Dawei Zhou
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Patent number: 6809066Abstract: Ion texturing methods and articles are disclosed.Type: GrantFiled: July 30, 2001Date of Patent: October 26, 2004Assignee: The Regents of the University of CaliforniaInventors: Ronald P. Reade, Paul H. Berdahl, Richard E. Russo, Leslie G. Fritzemeier
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Patent number: 6638895Abstract: A method of fabricating high aspect ratio ceramic structures in which a selected portion of perovskite or perovskite-like crystalline material is exposed to a high energy ion beam for a time sufficient to cause the crystalline material contacted by the ion beam to have substantially parallel columnar defects. Then selected portions of the material having substantially parallel columnar defects are etched leaving material with and without substantially parallel columnar defects in a predetermined shape having high aspect ratios of not less than 2 to 1. Etching is accomplished by optical or PMMA lithography. There is also disclosed a structure of a ceramic which is superconducting at a temperature in the range of from about 10° K. to about 90° K. with substantially parallel columnar defects in which the smallest lateral dimension of the structure is less than about 5 microns, and the thickness of the structure is greater than 2 times the smallest lateral dimension of the structure.Type: GrantFiled: October 25, 2000Date of Patent: October 28, 2003Assignee: The University of ChicagoInventors: Goran T. Karapetrov, Wai-Kwong Kwok, George W. Crabtree, Maria Iavarone
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Patent number: 6525002Abstract: An oxide superconductor includes a textured superconducting material including an array of defects with a neutron-fissionable element, or with at least one of the following chemical elements: uranium-238, Nd, Mn, Re, Th, Sm, V, and Ta. The array of defects is dispersed throughout the superconducting material. The superconducting material may be the RE1Ba2Cu3O7−&dgr; compound, wherein RE=Y, Nd, La, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu; the Bi2Sr2CaCu2Ox, the (Bi, Pb)2Sr2CaCu2Ox, Bi2Sr2Ca2Cu3Ox or (Bi, Pb)2Sr2Ca2Cu3Ox compound; the Tl2Ca1.5BaCu2Ox or Tl2Ca2Ba2Cu3Ox compound; or a compound involving substitution such as the Nd1+xBa2−xCu3Ox compounds. The neutron-fissionable element may be uranium-235. The oxide superconductor may include additional defects created by fission.Type: GrantFiled: May 6, 2000Date of Patent: February 25, 2003Inventor: Roy Weinstein
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Patent number: 6352741Abstract: High temperature superconductive (HTS) integrated circuits can be fabricated in three ways according to the invention. First, a planar multiple layer HTS integrated circuit is fabricated using multiple HTS layers. The layers include altered regions which have been bombarded using ion implantation to destroy superconductivity of the altered regions without interrupting the lattice structure of the altered regions. Second, a planar multiple-layer HTS integrated circuit includes upper and lower HTS layers, each including central and opposing regions. A first implant energy is used to destroy superconducting properties of the opposing regions of the lower HTS layer without interrupting the lattice structure. A second implant energy is used to destroy superconducting properties of a top portion of the central region to define a contact. Third, a HTS integrated circuit is formed from a single HTS layer using three ion implantation steps and ions having first, second and third energies and range.Type: GrantFiled: April 17, 1995Date of Patent: March 5, 2002Assignee: TRW Inc.Inventors: Hugo W. K. Chan, Arnold H. Silver
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Patent number: 6335108Abstract: An implant patterned superconductive device and a method for indirect implant-patterning of oxide superconducting materials is provided. The method forms a device having an oxide superconducting layer on a substrate, deposits a passivation layer atop the oxide superconducting layer, and implants chemical impurities in a selected portion of the superconducting layer through the passivation layer. This modifies the conductivity of the selected portion of the oxide superconducting layer and electrically isolates the selected portion from the non-selected portion of the oxide superconducting layer. The passivation layer is made of a material less susceptible to implant damage than the oxide superconducting layer to allow inhibition of the oxide superconducting layer while protecting the crystalline structure of the top surface of the oxide superconducting layer and keeping it planarized.Type: GrantFiled: September 7, 2000Date of Patent: January 1, 2002Assignee: TRW Inc.Inventors: John R. LaGraff, Claire L. Pettiette-Hall, James M. Murduck, Hugo W-K. Chan
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Patent number: 6207067Abstract: A method for fabricating an oxide superconducting device includes the steps of: forming a V-shaped groove on a substrate by a converging ion beam and forming a barrier with reduced superconductivity on the oxide superconducting thin-film on the groove to form a Josephson Junction, wherein the irradiation ion amount of the converging ion beam is varied according to the position of the beam within the groove in such a manner that an inclination angle of the inclined portion of the substrate is fixed. An oxide superconducting device (a Josephson Junction device) having a high degree of flexibility in arrangement and with high reproducibility, and having a high degree of uniformity is provided.Type: GrantFiled: September 29, 1998Date of Patent: March 27, 2001Assignees: Mitsubishi Denki Kabushiki Kaisha, International Superconductivity Technology CenterInventors: Naoki Yutani, Katsumi Suzuki, Youichi Enomoto, Jian-Guo Wen
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Patent number: 6147032Abstract: An implant patterned superconductive device and a method for indirect implant-patterning of oxide superconducting materials is provided. The method forms a device having an oxide superconducting layer on a substrate, deposits a passivation layer atop the oxide superconducting layer, and implants chemical impurities in a selected portion of the superconducting layer through the passivation layer. This modifies the conductivity of the selected portion of the oxide superconducting layer and electrically isolates the selected portion from the non-selected portion of the oxide superconducting layer. The passivation layer is made of a material less susceptible to implant damage than the oxide superconducting layer to allow inhibition of the oxide superconducting layer while protecting the crystalline structure of the top surface of the oxide superconducting layer and keeping it planarized.Type: GrantFiled: May 19, 1999Date of Patent: November 14, 2000Assignee: TRW Inc.Inventors: John R. LaGraff, Claire L. Pettiette-Hall, James M. Murduck, Hugo W-K. Chan
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Patent number: 6083885Abstract: An oxide superconductor includes a textured superconducting material including an array of defects with a neutron-fissionable element, or with at least one of the following chemical elements: uranium-238, Nd, Mn, Re, Th, Sm, V, and Ta. The array of defects is dispersed throughout the superconducting material. The superconducting material may be the RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. compound, wherein RE=Y, Nd, La, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu; the Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.x, the (Bi, Pb).sub.2 Sr.sub.2 CaCu.sub.2 O.sub.x, Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x or (Bi, Pb).sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x compound; the Tl.sub.2 Ca.sub.1.5 BaCu.sub.2 O.sub.x or Tl.sub.2 Ca.sub.2 Ba.sub.2 Cu.sub.3 O.sub.x compound; or a compound involving substitution such as the Nd.sub.1+x Ba.sub.2-x Cu.sub.3 O.sub.x compounds. The neutron-fissionable element may be uranium-235. The oxide superconductor may include additional defects created by fission.Type: GrantFiled: January 13, 1998Date of Patent: July 4, 2000Inventor: Roy Weinstein
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Patent number: 5952269Abstract: A method for forming a superconducting device using a selective etching technique on superconducting thin films. The method utilizes rapid etching which combines ion implantation with chemical etching. The portions of the superconducting film to be retained are masked from the ion implantation process. The chemical etching process then removes the implanted portions of the superconducting film at a much faster rate than the portions not implanted so that only the un-implanted portions remain. The resulting superconducting devices can be used, e.g., as nanostructures and nano tips, bolometers, multilayer RF coils, microwave waveguides and filters.Type: GrantFiled: January 23, 1998Date of Patent: September 14, 1999Assignee: The Trustees of Columbia University in the City of New YorkInventors: Qiyuan Ma, Mingling Chen
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Patent number: 5789346Abstract: Method for manufacturing a superconducting device including forming on a surface of a substrate a non-superconducting oxide layer, a first oxide superconductor thin film, etching the first oxide superconductor thin film so as to form a concave portion, implanting ions to the first oxide superconductor thin film at the bottom of the concave portion so as to form an insulating region such that the first oxide superconductor thin film is divided into two superconducting regions by the insulating region, and forming a second oxide superconductor thin film on the insulating region and the two superconducting regions, which is continuous to the two superconducting regions.Type: GrantFiled: May 20, 1996Date of Patent: August 4, 1998Assignee: Sumitomo Electric Industries, Ltd.Inventors: Takao Nakamura, Hiroshi Inada, Michitomo Iiyama
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Patent number: 5702565Abstract: An improved dielectric layer of an electroluminescent laminate, and method of preparation are provided. The dielectric layer is formed as a thick layer from a ceramic material to provide:a dielectric strength greater than about 1.0.times.10.sup.6 V/m;a dielectric constant such that the ratio of the dielectric constant of the dielectric material to that of the phosphor layer is greater than about 50:1;a thickness such that the ratio of the thickness of the dielectric layer to that of the phosphor layer is in the range of about 20:1 to 500:1; anda surface adjacent the phosphor layer which is compatible with the phosphor layer and sufficiently smooth that the phosphor layer illuminates generally uniformly at a given excitation voltage.The invention also provides for electrical connection of an electroluminescent laminate to voltage driving circuity with through hole technology. The invention also extends to laser scribing the transparent conductor lines of an electroluminescent laminate.Type: GrantFiled: May 23, 1995Date of Patent: December 30, 1997Assignee: Westaim Technologies, Inc.Inventors: Xingwei Wu, James Alexander Robert Stiles, Ken Kok Foo, Phillip Bailey
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Patent number: 5683968Abstract: A superconducting device or a super-FET has a pair of superconducting electrode regions (20b, 20c) consisting of a thin film (20) oxide superconductor being deposited on a substrate (5) and a weak/ink region (20a), the superconducting electrode regions (20b, 20c) being positioned at opposite sides of the weak link region (20a), these superconducting electrode regions (20b, 20c) and the weak link region (20a) being formed on a common plane surface of the substrate (5). The weak link region (20a) is produced by local diffusion of constituent element(s) of the substrate (5) and/or a gate electrode insulating layer (16) into the thin film (20) of the oxide superconductor in such a manner that a substantial wall thickness of the thin film (20) of the oxide superconductor is reduced at the weak link region (20a) so as to leave a weak link or superconducting channel (10) in the thin film (20) of oxide superconductor over a non-superconducting region (50) which is produced by the diffusion.Type: GrantFiled: August 31, 1995Date of Patent: November 4, 1997Assignee: Sumitomo Electric Industries, Ltd.Inventors: Takao Nakamura, Hiroshi Inada, Michitomo Iiyama
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Patent number: 5677265Abstract: A process for the oxygenation of ceramic high T.sub.c superconductors is disclosed. The superconductor is formed from a sintered powdered ceramic. Microchannels are formed in the ceramic material by embedding in the powder a plurality of wires or fibers formed of a material which is thermally removable during the sintering process to leave thin, continuous, tubular channels. After sintering, the ceramic is exposed to oxygen in a high temperature, high pressure environment. The microchannels aid in the transport of oxygen into the interior of the material by providing passages along which the oxygen travels prior to diffusing into the material. The lengths of the diffusion paths in the material are thereby greatly shortened. In another embodiment, the channels are formed after sintering and prior to oxygenation by drilling, punching, or etching.Type: GrantFiled: March 3, 1995Date of Patent: October 14, 1997Assignee: Northeastern UniversityInventors: Bill C. Giessen, Robert S. Markiewicz, Bala Maheswaran, Thomas R. Gilbert
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Patent number: 5597782Abstract: A method for improving the phase purity of a multiphase ceramic high temperature superconductor by selective microwave heating of undesired phases in a multiphase material to cause a phase transformation of the undesired phase to the desired phase. The selective microwave heating may be employed during initial firing and sintering of the ceramic superconductor compound or as a subsequent annealing step. Plane polarized microwave energy may be employed to enhance the two dimensional anisotropy of the compound by similar selective heating.Type: GrantFiled: January 9, 1995Date of Patent: January 28, 1997Inventor: David L. Henty
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Patent number: 5547922Abstract: Superconductivity is inhibited in selected regions of a HTS material by subjecting the material to impurity ion bombardment at an energy level selected to implant ions in the material at a selected depth. The concentration of deposited ions varies with depth in the material according to a peaked depth distribution function which has a maximum at the selected depth. The material may be masked before implantation. After low temperature annealing, the material loses its superconducting characteristics in the selected regions but such characteristics are preserved at depths above and below the selected depth. The material's crystalline structure is preserved so additional layers can be epitaxially grown atop the inhibited material Multilayer HTS devices and circuits may be made by repeating the ion implantation and/or masking steps at with different ion energy levels.Type: GrantFiled: February 17, 1995Date of Patent: August 20, 1996Assignee: The University of British ColumbiaInventor: Qi Y. Ma
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Patent number: 5512540Abstract: A manufacturing method of a superconducting pattern is described. A superconducting ceramic film is deposited on a non-conductive surface and partly spoiled in order to form a barrier film by which two superconducting regions is separated. The spoiling is performed by adding a spoiling element into the ceramic film by ion implantation.Type: GrantFiled: October 14, 1994Date of Patent: April 30, 1996Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shunpei Yamazaki
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Patent number: 5498595Abstract: A method for activating superconducting material comprises generating a species of oxygen ions, heating the material and introducing the oxygen ions to said material by the application of a low-gradient drift field between the source of oxygen ions and a substrate including the superconducting material.Type: GrantFiled: August 16, 1994Date of Patent: March 12, 1996Assignee: British Technology Group LimitedInventor: William Eccleston
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Patent number: 5453306Abstract: The generation of a reaction product is suppressed between a metallic substrate and plasma in depositing a ceramic intermediate layer on the metallic substrate in a process for depositing an oxide film on the metallic substrate by thermal plasma flash evaporation method. Thus, there is no reaction phase in the ceramic intermediate layer and the metallic substrate, and an intermediated buffer layer of only oxide ceramic is deposited on a flat surface of the metallic substrate. The intermediate ceramic layer is deposited in inert atmosphere of a low oxygen concentration at a temperature of less than 600.degree. C. for the metallic substrate. Then, a superconducting thin film is deposited on the ceramic intermediate layer.Type: GrantFiled: June 30, 1994Date of Patent: September 26, 1995Assignees: International Superconductivity Technology Center, Hokkaido Electric Power Co., Inc., Fujikura Ltd., Tokyo Gas Co., Ltd., Hitachi Cable, Ltd.Inventors: Noriyuki Tatsumi, Jiro Tsujino, Atsushi Kume, Yuh Shiohara, Shoji Tanaka, Shigenori Yuhya, Kei Kikuchi
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Patent number: 5432149Abstract: A weak link is patterned from a high-temperature superconducting film using standard lithographic techniques. Once the area in which the weak link is to be located is defined, the remainder of the film is covered with an oxygen-impermeable material. The oxygen is then removed in the weak link area by placing the sample in a vacuum furnace at a sufficient temperature to drive out the oxygen. Once the oxygen is removed, the weak link becomes non-superconducting. A high power solid state laser is placed in front of the weak link, and superconductivity is restored in the weak link area, in situ. The process is performed in a liquid nitrogen environment.Type: GrantFiled: April 8, 1994Date of Patent: July 11, 1995Assignee: Regents of the University of CaliforniaInventors: Ivan K. Schuller, Gladys L. Nieva, Julio J. Guimpel, Eduardo Osquiguil, Yvan Bruynseraede
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Patent number: 5314871Abstract: According to the present invention, when a superconductive thin film is formed on a substrate of a single crystal, a compound having a composition of SrNdGaO.sub.4 and a K.sub.2 NiF.sub.4 type crystal structure is used as a material employable for the substrate. Alternatively, a single crystal composed of an oxide in which Ca, La and Cr are added to the foregoing compound is used as a material employable for the substrate. Then, a superconductive thin film composed of an oxide is formed on the substrate by employing an epitaxial growing method. Thus, the present invention makes it possible to provide a superconductive material having an excellent property of lattice alignment, a stable and high critical superconductivity temperature and a stable critical superconductivity electric current.Type: GrantFiled: May 21, 1993Date of Patent: May 24, 1994Assignee: Kabushiki Kaisha Komatsu SeisakushoInventor: Kozo Nakamura
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Patent number: 5312804Abstract: A method of fabricating a superconductive flexible conductor having a high critical temperature in which method a deposit of superconductive ceramic is applied to a metal tape of thickness lying in the range 0.1 mm to 1 mm, wherein:the deposit of thickness lying in the range 50 .mu.m to 300 .mu.m and of concentration by volume of not less than 70% runs through an infrared beam at a speed of not less than 5 cm per minute, the zone treated by the the beam having a width of less than 10 mm relative to the travel direction and a surface temperature of not less than 1200.degree. C., thereby imparting a surface superconductive layer to the deposit which is of concentration by volume close to 100%, which is textured in the travel direction, and which is of thickness lying in the range 10 .mu.m to 100 .mu.m; andannealing is then performed under oxygen.Type: GrantFiled: October 28, 1992Date of Patent: May 17, 1994Assignee: Alcatel CableInventors: Alain Petitbon, Roland Queriaud
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Patent number: 5304539Abstract: A beam (e.g. a focused laser beam) is utilized to irradiate the entire lateral width of a limited-extent portion of an elongated superconducting thin-film lead. The irradiated portion is converted to be non-superconducting and photoconductive. The converted portion constitutes a photodetector integrated with associated superconducting leads.Type: GrantFiled: May 12, 1992Date of Patent: April 19, 1994Assignee: Bell Communications Research, Inc.Inventors: Silas J. Allen, Robert R. Krchnavek